High-pressure starting device and reduction furnace
By setting a freewheeling resistor in the cooling device of the high-voltage starter device and cooling it with coolant, the problem of poor heat dissipation of the high-voltage starter device in a high-temperature environment is solved, and long-term effective cooling and stable operation of the components are achieved.
Patent Information
- Application Number
- CN202421208183.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-29
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2034-05-29
AI Technical Summary
The existing high-voltage starter lacks effective heat dissipation in high-temperature environments, resulting in easy damage to components and poor heat dissipation effect.
A high-voltage starting device is designed to ensure the circulating flow of the coolant by setting a freewheeling resistor in the cooling device and cooling it with coolant, thereby achieving long-term effective cooling of the freewheeling resistor.
The temperature of the components of the high-pressure starting device is effectively reduced, damage caused by long-term heating is avoided, the heat dissipation effect is improved, and the device stability during the long-term startup in the reduction furnace is ensured.
Smart Images
Figure CN222528316U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of polysilicon reduction, and in particular to a high-voltage starting device and a reduction furnace. Background Art
[0002] With the rapid development of semiconductor and energy fields, the demand for polysilicon has also grown rapidly. At present, the production of polysilicon is mainly carried out through the modified Siemens method. The current output of polysilicon has reached 10,000 tons, and the polysilicon produced by the modified Siemens method accounts for about 97.2% of the total output. It can be seen that the Siemens method is important for the production of polysilicon. The modified Siemens method is the main method for the production of polysilicon, and the reduction furnace is the main equipment for the production of polysilicon by this method.
[0003] The situation inside the reduction furnace is complicated and the temperature inside the furnace is high during operation. Currently, most polysilicon production uses a high-voltage breakdown mode to light up the silicon core when starting the furnace. The process of high-voltage breakdown of the silicon core is an important part of the entire production process, and it is necessary to dissipate heat for the components of the high-voltage starting circuit in a high-temperature environment.
[0004] However, in the implementation process, the existing high-voltage starting device lacks effective heat dissipation. Utility Model Content
[0005] The embodiments of the present application provide a high-voltage starting device and a reduction furnace, so as to achieve the effect of effective heat dissipation of the high-voltage starting device.
[0006] In a first aspect, an embodiment of the present application provides a high-voltage starting device, comprising:
[0007] A boost module, used to connect to a recovery power source;
[0008] A freewheeling resistor, one end of which is connected to the first end of the boost module, and the other end of which is connected to the second end of the boost module;
[0009] A silicon core, one end of which is connected to the third end of the boost module, and the other end of which is connected to the fourth end of the boost module;
[0010] The cooling device has a square cavity, the first side wall of the square cavity has a connecting end, the connecting end is connected to the freewheeling resistor, the second side wall of the square cavity has a liquid inlet and a liquid outlet for the cooling liquid, the liquid inlet is used to connect to the liquid inlet pipe, and the liquid outlet is used to connect to the liquid outlet pipe.
[0011] In a possible implementation, the height of the liquid inlet is smaller than the height of the liquid outlet.
[0012] In a possible implementation, the cooling liquid of the cooling device is desalted water.
[0013] In a possible implementation, the inlet temperature of the coolant of the cooling device is 25-35°C.
[0014] In a possible implementation, the temperature difference between the inlet and outlet water of the coolant in the cooling device is less than 5°C.
[0015] In a possible implementation manner, the water flow rate of the cooling device is 15-25 L / min.
[0016] In a possible implementation manner, the high voltage starting device further includes a first thyristor and a second thyristor;
[0017] The anode of the first thyristor is connected to the restoration power supply, and the cathode of the first thyristor is connected to the first end of the boost module and one end of the freewheeling resistor;
[0018] The anode of the second thyristor is respectively connected to the cathode of the first thyristor, the first end of the boost module and one end of the freewheeling resistor; the cathode of the second thyristor is connected to the anode of the first thyristor and is also used to connect to the reduction power supply.
[0019] In a possible implementation, the high-voltage starting device further includes a first fuse, one end of the first fuse is used to connect to the restoration power supply, and the other end of the first fuse is respectively connected to the anode of the first thyristor and the cathode of the second thyristor.
[0020] In a possible implementation manner, the high-voltage starting device further includes a silicon rod, a second fuse, a first controllable switch, and a second controllable switch;
[0021] One end of the first controllable switch is connected to the third end of the boost module, and the other end of the first controllable switch is connected to one end of the silicon core;
[0022] One end of the second controllable switch is connected to the other end of the silicon core, and the other end of the second controllable switch is connected to the fourth end of the boost module;
[0023] One end of the silicon rod is respectively connected to one end of the second controllable switch and the other end of the silicon core, and the other end of the silicon rod is connected to the second end of the boost module through the second fuse.
[0024] In a second aspect, an embodiment of the present application provides a reduction furnace, the reduction furnace comprising: a high-voltage starting device such as any one of the above-mentioned items.
[0025] The high-voltage starting device and reduction furnace provided in the embodiments of the present application are configured such that a freewheeling resistor is arranged in a cooling device on a square wall, and the cooling device cools the freewheeling resistor by means of a coolant. In this way, the freewheeling resistor can be effectively cooled, and the coolant can be circulated through the liquid inlet and outlet of the cooling device to ensure that the freewheeling resistor can be cooled for a long time, which is beneficial to the protection of the freewheeling resistor during the long-term startup process in the reduction furnace and achieves the effect of effective heat dissipation of the high-voltage starting device. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0027] Figure 1 A schematic diagram of the structure of the high-voltage starting device provided in this application;
[0028] Figure 2 A schematic diagram of the structure of the cooling device provided in this application;
[0029] Figure 3 A schematic diagram of the structure of a high-voltage starting circuit provided in an embodiment of the present application.
[0030] Reference numerals:
[0031] 110: boost module; 120: freewheeling resistor; 130: silicon core; 140: cooling device; 200: recovery power supply; 141: connection end; 141a: first connection end; 141b: second connection end; 143: liquid inlet; 144: liquid outlet; VT1: first thyristor; VT2: second thyristor; FU1: first fuse; FU2: second fuse; CJ11: first controllable switch; CJ21: second controllable switch; 150: silicon rod.
[0032] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION
[0033] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.
[0034] With the rapid development of semiconductor and energy fields, the demand for polysilicon has also grown rapidly. At present, the production of polysilicon is mainly carried out through the modified Siemens method. The current output of polysilicon has reached 10,000 tons, and the polysilicon produced by the modified Siemens method accounts for about 97.2% of the total output. It can be seen that the Siemens method is important for the production of polysilicon. The modified Siemens method is the main method for the production of polysilicon, and the reduction furnace is the main equipment for the production of polysilicon by this method.
[0035] The situation inside the reduction furnace is complicated and the temperature inside the furnace is high during operation. Currently, most polysilicon production uses a high-voltage breakdown mode to light up the silicon core when starting the furnace. The process of high-voltage breakdown of the silicon core is an important part of the entire production process, and it is necessary to dissipate heat for the components of the high-voltage starting circuit in a high-temperature environment.
[0036] In the prior art, the components of the high-voltage starting circuit are usually cooled by self-cooling or forced air cooling. However, the time to start the reduction furnace in daily production is too long, usually more than 40 minutes. At this time, the heat dissipation method of the prior art is likely to burn out the components in the high-voltage starting circuit, the heat dissipation effect is poor, and the high-voltage starting device lacks effective heat dissipation.
[0037] Based on the above reasons, the high-voltage starting device and reduction furnace provided in the present application use a cooling device that cools and dissipates heat through a coolant, which is a technical means for effectively cooling the freewheeling resistor of the high-voltage starting device for a long time. This is beneficial to the protection of the freewheeling resistor during the long-term starting process in the reduction furnace, and solves the technical problem that the high-voltage starting device cannot effectively dissipate heat.
[0038] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.
[0039] Figure 1 A schematic diagram of the structure of a high-voltage starting device provided in this application. Figure 2 A schematic diagram of the structure of the cooling device provided in the embodiment of the present application is shown in FIG. Figure 1 and Figure 2 As shown, the high voltage starting device includes:
[0040] The boost module 110 is used to connect to the recovery power source 200 .
[0041] Among them, the boost module 110 can be a circuit module for increasing the voltage so that the silicon core 130 can be broken down by the high voltage. For example, the boost module 110 can be a circuit including a transformer. The reduction power supply 200 can be a low-voltage power supply, or a power supply for providing a low-voltage voltage so that the low-voltage voltage can be boosted to form a high voltage. High voltage can refer to a voltage that can at least break down the silicon core in the reduction furnace. For example, if a silicon core with a resistivity lower than 100ω·cm is broken down with a voltage of 5500 to 6000V, then the high voltage of the present application can refer to a voltage of 5500 to 6000V or even higher. In the specific implementation process, high voltage can be defined according to the voltage that breaks down the silicon core as needed.
[0042] The freewheeling resistor 120 has one end connected to the first end of the boost module 110 , and the other end connected to the second end of the boost module 110 .
[0043] The freewheeling resistor 120 may be a resistor for providing a minimum maintaining current for the thyristor of the high-voltage starting device, so that the circuit of the high-voltage starting device can remain conductive, thereby increasing the continuous high voltage for the silicon core 130 .
[0044] The silicon core 130 has one end connected to the third end of the boost module 110 , and the other end connected to the fourth end of the boost module 110 .
[0045] The silicon core 130 can be used to be broken down in the reduction furnace to make the silicon core 130 conductive and generate heat, so that vapor deposition can occur on the surface of the silicon core 130 to complete the production of polycrystalline silicon.
[0046] The cooling device 140 has a square cavity, the first side wall of the square cavity has a connecting end 141, the connecting end 141 is connected to the freewheeling resistor 120, and the second side wall of the square cavity has a liquid inlet 143 and a liquid outlet 144 for the cooling liquid, the liquid inlet 143 is used to connect to the liquid inlet pipe, and the liquid outlet 144 is used to connect to the liquid outlet pipe.
[0047] Among them, the cooling device 140 can be a device for cooling the freewheeling resistor 120. The connecting terminal 141 can be a terminal of the cooling device 140, and the terminal can be an outlet port of the electrical signal, so that the freewheeling resistor 120 is connected to the circuit of the high-voltage starting device through the terminal. The coolant can be a liquid used to cool the freewheeling resistor 120, and the high-temperature freewheeling resistor 120 can be cooled by the low-temperature coolant, so that the freewheeling resistor 120 can be effectively dissipated. The liquid inlet 143 can be a port for the coolant to flow into the cooling device 140, and the liquid outlet 144 can be a port for the coolant to flow out of the cooling device 140. The liquid inlet pipe can be a pipe for conveying the coolant into the cooling device 140, and the liquid outlet pipe can be a pipe for conveying the coolant out of the cooling device 140. By setting the liquid inlet 143 and the liquid outlet 144, the coolant can be in a flowing state to maintain effective heat dissipation of the freewheeling resistor 120.
[0048] Exemplarily, the first end of the boost module 110 can be connected to the first end of the restoration power supply 200, and the second end of the boost module 110 can be connected to the second end of the restoration power supply 200. In this way, the voltage of the restoration power supply 200 can be boosted by the boost module 110, so that the boosted high voltage can break through the silicon core 130. One end of the freewheeling resistor 120 can be connected to the first end of the boost module 110 and the first end of the restoration power supply 200, respectively, and the other end of the freewheeling resistor 120 can be connected to the second end of the boost module 110 and the second end of the restoration power supply 200, respectively. In this way, a conductive loop can be formed by the freewheeling resistor 120, and the thyristor in the loop of the high-voltage starting device at the other end can be kept with a continuous minimum holding current, thereby ensuring the conduction of the thyristor, and further ensuring that the voltage loaded to the silicon core 130 is a sustainable high voltage. One end of the silicon core 130 can be connected to the third end of the boost module 110, and the other end of the silicon core 130 can be connected to the fourth end of the boost module 110. In this way, the silicon core 130 can be broken down by the high voltage boosted by the boost module 110, and the silicon core 130 after breakdown can generate heat and conduct electricity.
[0049] The cooling device 140 may be a square cavity, for example, a cuboid with a cavity, and a coolant may be placed in the cavity. The first side wall of the square cavity may have a first connection end 141a and a second connection end 141b, wherein the first connection end 141a may be connected to one end of the freewheeling resistor 120 inside the side wall and to the first end of the boost module 110 outside the side wall, and the second connection end 141b may be connected to the other end of the freewheeling resistor 120 inside the side wall and to the second end of the boost module 110 outside the side wall. In this way, the freewheeling resistor 120 may be installed in the cooling device 140 through the connection end 141, so that the cooling device 140 may dissipate heat and cool the freewheeling resistor 120. The second side wall of the square cavity has a liquid inlet 143 and a liquid outlet 144 for the coolant. The liquid inlet 143 is used to connect to the liquid inlet pipe, and the liquid inlet pipe can transport the low-temperature coolant into the square cavity through the liquid inlet 143; the liquid outlet 144 is used to connect to the liquid outlet pipe, and the liquid outlet pipe can make the coolant in the square cavity flow out through the infusion port. In this way, the coolant can be in a flowing state, so that the coolant can maintain a low problem, thereby improving the effective heat dissipation of the freewheeling resistor 120, ensuring that the freewheeling resistor 120 will not be burned out during high-voltage startup and reduction, and ensuring the freewheeling effect of the freewheeling resistor 120.
[0050] Specifically, the reduction power supply 200 provides a low voltage, which is boosted by the boost module 110 to obtain a high voltage, and the high voltage breaks down the silicon core 130 to reduce and obtain polysilicon. During the boost process, the silicon core 130 is not broken down, and the circuit where it is located is not turned on. When its circuit is not turned on, the circuit where the freewheeling resistor 120 is located is turned on, which can provide a continuous minimum holding current for the thyristor of the high-voltage starting circuit, ensuring that the voltage loaded to the silicon core 130 is a high voltage. Through the above structure, the cooling device 140 of the circulating coolant can effectively dissipate the heat of the freewheeling resistor 120, thereby ensuring that the freewheeling resistor 120 is not burned out and ensuring the normal operation of the high-voltage starting device.
[0051] The high-voltage starting device provided in the embodiment of the present application is configured such that the freewheeling resistor 120 is disposed in a cooling device 140 of a square wall, and the cooling device 140 cools the freewheeling resistor 120 by means of a coolant. In this way, the freewheeling resistor 120 can be effectively cooled, and the coolant can circulate through the liquid inlet and outlet 144 of the cooling device 140, thereby ensuring that the freewheeling resistor 120 can be cooled for a long time, which is beneficial to the protection of the freewheeling resistor 120 during the long-term startup process in the reduction furnace, and achieves the effect of effective heat dissipation of the high-voltage starting device.
[0052] Figure 2 A schematic diagram of the structure of the cooling device 140 provided in the embodiment of the present application is shown in FIG. Figure 2 As shown, in this embodiment Figure 1 Based on the embodiment, the cooling device 140 is described in detail. The cooling device 140 includes: a square cavity, a first connecting end 141 a, a second connecting end 141 b, a liquid inlet 143 and a liquid outlet 144 .
[0053] The first connection end 141a and the second connection end 141b are arranged on the first side wall of the cavity, and the first connection end 141a and the second connection end 141b can be arranged at intervals. The liquid inlet 143 and the liquid outlet 144 are arranged on the second side wall of the square cavity, and the horizontal height of the liquid inlet 143 is smaller than the horizontal height of the liquid outlet 144.
[0054] Exemplarily, the first connection end 141a can be connected to one end of the freewheeling resistor 120 inside the side wall, and the first end of the boost module 110 and the first end of the recovery power supply 200 outside the side wall are respectively connected. The second connection end 141b can be connected to the other end of the freewheeling resistor 120 inside the side wall, and the second end of the boost module 110 and the second end of the recovery power supply 200 outside the side wall are respectively connected. In this way, the first connection end 141a and the second connection end 141b can be used as electrical signal lead-out ports.
[0055] In a specific implementation, the level of the liquid inlet 143 of the cooling device 140 is smaller than the level of the liquid outlet 144. Figure 2As shown, the Y direction may be a horizontal direction. In this way, the cooling liquid of the cooling device 140 may enter from the bottom and exit from the top, which is beneficial to improving the cooling effect of the cooling device 140.
[0056] Optionally, the coolant of the cooling device 140 is desalted water. Desalted water is suitable as a coolant, and desalted water is almost non-conductive, thereby ensuring that the coolant for heat dissipation of the freewheeling resistor 120 does not interfere with the normal operation of the freewheeling resistor 120. Desalted water is beneficial as a coolant for the cooling device 140.
[0057] Optionally, the water inlet temperature of the coolant of the cooling device 140 is 25-35°C. The coolant at room temperature of 25-35°C is easy to obtain without additional cooling, and the coolant at room temperature can effectively provide cooling for the freewheeling resistor 120, which is beneficial to the heat dissipation of the freewheeling resistor 120.
[0058] Optionally, the inlet and outlet water temperature difference of the coolant of the cooling device 140 is less than 5°C, and the inlet and outlet water temperature difference refers to the temperature difference between the coolant temperature flowing into the inlet 143 and the coolant temperature flowing out of the outlet 144. The inlet and outlet water temperature difference of less than 5°C is conducive to keeping the coolant at a relatively low temperature, which is conducive to the coolant effectively dissipating heat to the freewheeling resistor 120, and avoiding the coolant temperature being too high, resulting in poor heat dissipation effect on the freewheeling resistor 120.
[0059] Optionally, the water flow rate of the cooling device 140 is 15-25 L / min. In this way, the flow of the coolant with a water flow rate of 15-25 L / min can ensure the flow state of the coolant, so that the coolant can have a lower temperature, which is conducive to cooling the freewheeling resistor 120 and providing effective heat dissipation for the freewheeling resistor 120.
[0060] Optionally, the inner diameter of the liquid inlet pipe and the liquid outlet pipe is φ12. In this way, it can be ensured that the pipe has a sufficient inner diameter to ensure the flow of the coolant.
[0061] Optionally, the size of the square cavity is: 450×150×51 mm. In this way, it can be ensured that the square cavity has enough size to be filled with coolant, which is beneficial to provide cooling for the freewheeling resistor 120 and to dissipate heat of the freewheeling resistor 120 .
[0062] In the embodiment provided by the embodiment of the present application, through the above structure, the entire freewheeling resistor 120 adopts a water-cooled cooling structure, and can use the 30°C cooling water (desalted water) of the polysilicon reduction plant as a heat exchange medium to continuously and stably remove the heat generated inside the freewheeling resistor 120 when it is working, ensuring that the freewheeling resistor 120 operates in a relatively low temperature environment, solving the problem of damage to the internal resistance of the freewheeling resistor 120 caused by long heating due to long high-voltage startup time. That is, the coolant of the cooling device 140 can circulate and ensure that the coolant can be at a relatively low temperature, ensuring that the freewheeling resistor 120 can be cooled for a long time, which is beneficial to the protection of the freewheeling resistor 120 during the long startup process in the reduction furnace, and achieving the effect of effective heat dissipation of the high-voltage startup device.
[0063] Figure 3 A schematic diagram of the structure of a high-voltage startup circuit provided in an embodiment of the present application is shown in FIG. Figure 3 As shown, in this embodiment Figure 1 Based on the embodiment, the high-voltage starting circuit is described in detail. The high-voltage starting circuit is a circuit circuit of a high-voltage starting device. The high-voltage starting circuit includes:
[0064] The boost module 110 is used to connect to the recovery power supply 200; the freewheeling resistor 120 has one end connected to the first end of the boost module 110 and the other end connected to the second end of the boost module 110; the silicon core 130 has one end connected to the third end of the boost module 110 and the other end connected to the fourth end of the boost module 110.
[0065] Optionally, the high-voltage starting circuit further includes a first thyristor VT1 and a second thyristor VT2; the anode of the first thyristor VT1 is connected to the reduction power supply 200, and the cathode of the first thyristor VT1 is connected to the first end of the boost module 110 and one end of the freewheeling resistor 120;
[0066] The anode of the second thyristor VT2 is respectively connected to the cathode of the first thyristor VT1, the first end of the boost module 110 and one end of the freewheeling resistor 120; the cathode of the second thyristor VT2 is connected to the anode of the first thyristor VT1 and is also used to connect to the reduction power supply 200.
[0067] Exemplarily, the anode of the first thyristor VT1 can be connected to the cathode of the second thyristor VT2, and the cathode of the second thyristor VT2 can be connected to the anode of the second thyristor VT2, so that the first thyristor VT1 and the second thyristor VT2 can form a reverse parallel structure. The anode of the first thyristor VT1 and the cathode of the second thyristor VT2 can be connected to the reduction power supply 200, and the cathode of the first thyristor VT1 and the anode of the second thyristor VT2 can be connected to the first end of the boost module 110 and one end of the freewheeling resistor 120.
[0068] In a specific implementation, the high-voltage starting circuit also includes a first fuse FU1, one end of which is used to connect to the recovery power supply 200, and the other end of which is respectively connected to the anode of the first thyristor VT1 and the cathode of the second thyristor VT2.
[0069] In a specific implementation, the high-voltage starting circuit also includes a switch CJ1, one end of the switch CJ1 is respectively connected to the cathode of the first thyristor VT1 and the anode of the second thyristor VT2, and the other end of the switch CJ1 is respectively connected to the first end of the boost module 110 and one end of the freewheeling resistor 120.
[0070] Specifically, the high-voltage starting circuit also includes a capacitor C1, a capacitor C2 and a resistor R, one end of the capacitor C1 is respectively connected to the anode of the first thyristor VT1 and the cathode of the second thyristor VT2, the other end of the capacitor C1 is connected to one end of the capacitor C2, the other end of the capacitor C2 is connected to one end of the resistor R, and the other end of the resistor R is respectively connected to the cathode of the first thyristor VT1 and the anode of the second thyristor VT2.
[0071] Optionally, the high voltage starting circuit further includes a silicon rod 150, a second fuse FU2, a first controllable switch CJ11 and a second controllable switch CJ21;
[0072] One end of the first controllable switch CJ11 is connected to the third end of the boost module 110 , and the other end of the first controllable switch CJ11 is connected to one end of the silicon core 130 ;
[0073] One end of the second controllable switch CJ21 is connected to the other end of the silicon core 130 , and the other end of the second controllable switch CJ21 is connected to the fourth end of the boost module 110 ;
[0074] One end of the silicon rod 150 is respectively connected to one end of the second controllable switch CJ21 and the other end of the silicon core 130 , and the other end of the silicon rod 150 is connected to the second end of the boost module 110 through the second fuse FU2 .
[0075] Exemplarily, the silicon rod 150 includes silicon R2, silicon R3, and silicon R4. The silicon core 130 can be connected to the third end of the boost module 110 through the first controllable switch CJ11, and the silicon core 130 can be connected to the fourth end of the boost module 110 through the second controllable switch CJ21.
[0076] One end of silicon R2 is respectively connected to one end of the second controllable switch CJ21 and the other end of the silicon core 130, the other end of silicon R2 is connected to one end of silicon R3, the other end of silicon R3 is connected to one end of silicon R4, and the other end of silicon R4 is connected to the second end of the boost module 110 through the second fuse FU2.
[0077] Specifically, the high voltage startup loop further includes a switch CJ2 , one end of which is connected to the cathode of the first thyristor VT1 and the anode of the second thyristor VT2 , and the other end of which is connected to one end of the first controllable switch CJ11 and the third end of the boost module 110 .
[0078] Specifically, the high-voltage startup circuit also includes a switch CJ3, one end of the switch CJ3 is connected to the other end of the silicon R4, the other end of the switch CJ3 is connected to the first end of the second fuse FU2, and the second end of the second fuse FU2 is connected to the second end of the boost module 110.
[0079] Specifically, the freewheeling resistor 120 is used during the high-voltage startup process to provide freewheeling for the first thyristor VT1 and the first thyristor VT2 so that the silicon core 130 is broken down by the high voltage. During the high-voltage startup process, the first controllable switch CJ11, the second controllable switch CJ21, the switch CJ1, the switch CJ2, and the switch CJ3 are closed, and the switch can be a vacuum contactor.
[0080] Specifically, the freewheeling resistor 120 includes a resistor Ra and a resistor Rb. One end of the resistor Ra is connected to the first end of the boost module 110, the other end of the resistor Ra is connected to one end of the resistor Rb, and the other end of the resistor Rb is connected to the second end of the boost module 110. The resistance values of the resistor Ra and the resistor Rb can both be 600Ω.
[0081] In the embodiment provided in the embodiment of the present application, through the above-mentioned structure, the high-voltage starting circuit of the high-voltage starting device can ensure that a continuous minimum maintaining current is provided to the thyristor of the high-voltage starting circuit, thereby ensuring that the voltage loaded to the silicon core 130 is a continuous high voltage, which is conducive to achieving high voltage breakdown of the silicon core 130, starting the reduction furnace, and realizing the reduction manufacturing of polysilicon.
[0082] In one embodiment, the present application provides a reduction furnace, which includes: a high-voltage starting device as described above. The high-voltage starting device of the above structure is helpful to avoid damage to components of the high-voltage starting device, and is beneficial to the reduction of the reduction furnace to manufacture polysilicon. The reduction furnace and the above high-voltage starting device have the same or corresponding technical features, which will not be repeated here.
[0083] Finally, it should be noted that those skilled in the art will easily think of other embodiments of the utility model after considering the specification and practicing the utility model disclosed herein. The utility model is intended to cover any variation, use or adaptation of the utility model, which follows the general principles of the utility model and includes common knowledge or conventional technical means in the technical field not disclosed by the utility model, is not limited to the precise structure described above and shown in the drawings, and can be modified and changed in various ways without departing from the scope thereof. The scope of the utility model is limited only by the appended claims.
Claims
1. A high voltage starting device, characterized in that: include: A boost module, used to connect to a recovery power source; A freewheeling resistor, one end of which is connected to the first end of the boost module, and the other end of which is connected to the second end of the boost module; A silicon core, one end of which is connected to the third end of the boost module, and the other end of which is connected to the fourth end of the boost module; The cooling device has a square cavity, the first side wall of the square cavity has a connecting end, the connecting end is connected to the freewheeling resistor, the second side wall of the square cavity has a liquid inlet and a liquid outlet for the cooling liquid, the liquid inlet is used to connect to the liquid inlet pipe, and the liquid outlet is used to connect to the liquid outlet pipe.
2. The device according to claim 1, characterized in that The level of the liquid inlet is smaller than the level of the liquid outlet.
3. The device according to claim 1, characterized in that The cooling liquid of the cooling device is desalted water.
4. The device according to claim 1 or 3, characterized in that: The inlet temperature of the coolant of the cooling device is 25-35°C.
5. The device according to claim 4, characterized in that The inlet and outlet temperatures of the cooling liquid in the cooling device are less than 5°C.
6. The device according to claim 1, characterized in that The water flow rate of the cooling device is 15-25 L / min.
7. The device according to claim 1, characterized in that The high voltage starting device also includes a first thyristor and a second thyristor; The anode of the first thyristor is connected to the reduction power supply, and the cathode of the first thyristor is connected to the first end of the boost module and one end of the freewheeling resistor; The anode of the second thyristor is respectively connected to the cathode of the first thyristor, the first end of the boost module and one end of the freewheeling resistor; the cathode of the second thyristor is connected to the anode of the first thyristor and is also used to connect to the reduction power supply.
8. The device according to claim 7, characterized in that The high-voltage starting device also includes a first fuse, one end of which is used to connect to the restoration power supply, and the other end of which is respectively connected to the anode of the first thyristor and the cathode of the second thyristor.
9. The device according to claim 1, characterized in that The high-voltage starting device also includes a silicon rod, a second fuse, a first controllable switch and a second controllable switch; One end of the first controllable switch is connected to the third end of the boost module, and the other end of the first controllable switch is connected to one end of the silicon core; One end of the second controllable switch is connected to the other end of the silicon core, and the other end of the second controllable switch is connected to the fourth end of the boost module; One end of the silicon rod is respectively connected to one end of the second controllable switch and the other end of the silicon core, and the other end of the silicon rod is connected to the second end of the boost module through the second fuse.
10. A reduction furnace, characterized in that: The reduction furnace comprises: a high-voltage starting device as described in any one of claims 1 to 9.