High-voltage pulse device for surface treatment of vascularization flow channel in artificial tissue

Abstract

The utility model discloses an artificial tissue internal vascularization flow channel surface treatment oriented high-voltage pulse device, which comprises a high-voltage pulse generating system, a high-voltage pulse power transmission line, a plasma generator and artificial tissue, and is characterized in that the high-voltage pulse generating system comprises a direct-current power supply input module, a high-voltage pulse module and a control module; the high-voltage pulse module comprises a boosting module, a switch control module and a pulse output module; the plasma generator module comprises a plasma reaction cavity and a sensor, and the high-voltage pulse device can treat the surface of an internal vascularization flow channel of an artificial tissue under the condition that the artificial tissue is not damaged, so that the biocompatibility of the artificial tissue and the chemical activity of the inner surface of an artificial tissue blood vessel are improved. Meanwhile, the system can detect and analyze the surface of the internal flow channel of the artificial tissue needing to be treated, so that the output of the high-voltage pulse power supply is precisely regulated and controlled, and the high precision of treatment is realized.

Description

Technical Field

[0001] The utility model relates to the field of plasma surface treatment, in particular to a high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissues. Background Art

[0002] With the development of modern medicine, people pay more and more attention to vascular health, especially the research on vascular diseases, such as arteriosclerosis, vascular inflammation, and vascular blockage. These diseases can damage the structure and function of blood vessels, leading to obstructed blood flow, which in turn affects the normal function of various parts of the body and even causes serious health problems. In addition, some specific diseases, such as diabetes and hypertension, can also have adverse effects on human blood vessels and accelerate the aging process of blood vessels. In this case, it is particularly important to promote the regeneration and repair of blood vessels in damaged tissues or organs through artificial means in a timely manner. However, the current bioprinting technology is still a problem in achieving the efficiency and stability of artificial vascular endothelialization.

[0003] Traditional techniques for artificial tissue vascularization mainly include the following:

[0004] 1. Synthetic polymer materials: such as Dacron, expanded polytetrafluoroethylene (ePTFE), polyurethane (PU), etc. These materials have good mechanical properties and durability, but they may cause fibrin and platelet deposition after contact with blood, leading to stenosis of the lumen and vascular occlusion.

[0005] 2. Animal-derived decellularized matrix materials: Animal blood vessels or mesentery are treated with enzymes, ultrasound or centrifugation techniques to become decellularized matrices, which are then prepared into tissue engineering artificial blood vessels. This method can retain some of the biomechanical properties of blood vessels, but is more likely to induce immune rejection reactions.

[0006] 3. Bio-coating technology: small molecules or surfactants are linked to the surface of artificial vascular materials to enhance the adhesion of endothelial cells to the inner wall of vascular materials, thereby improving the anti-thrombotic and anti-coagulation effects and improving long-term blood flow. However, for artificial tissue vascularization technology, factors such as the stability, uniformity and biocompatibility of the bio-coating are the core challenges.

[0007] Given the limitations of traditional methods, continued research and innovation are essential for optimizing these coatings. This application aims to ensure that the surface of the flow channel in artificial tissue can better simulate the function of natural blood vessels, reduce complications, and improve patient treatment outcomes. To this end, this application proposes a high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissues, which is of great significance for the development of new artificial vascular products. Utility Model Content

[0008] The purpose of the utility model is to provide a high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissues, which can effectively solve the problems of poor biocompatibility and poor activity of the inner surface of artificial tissue blood vessels in the traditional technologies currently on the market as mentioned in the background technology.

[0009] In order to achieve the above purpose, the technical solution adopted by the utility model is:

[0010] A high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissues, characterized in that it includes a high-voltage pulse generating system, a high-voltage pulse transmission line and a plasma generator, wherein the high-voltage pulse generating system is connected to the plasma generator via a high-voltage pulse wire, and the plasma generator is placed on the surface of the flow channel inside the artificial tissue in the artificial tissue, wherein the high-voltage pulse generating system includes a DC power input module, a high-voltage pulse module and a control module, wherein the high-voltage pulse module includes a boost module and a high-voltage pulse output module, wherein the control module includes a switch control module and a surface temperature detection module, wherein the DC power input module and the switch control module are respectively connected to the boost module, wherein the boost module is connected to the high-voltage pulse output module, wherein the high-voltage pulse output module is connected to the plasma generator, and wherein the surface temperature detection module is connected to the plasma generator.

[0011] The boost module includes at least one all-solid-state switch tube IGBT, at least one diode and at least one capacitor. During the energy conversion process, the boost module controls the on and off of the all-solid-state switch tube IGBT according to the pulses sent by the switch control module. When storing energy, the all-solid-state switch tube IGBT is in an off state, and the energy storage capacitor is charged in parallel through the diode. When releasing energy, the all-solid-state switch tube IGBT is in an on state, and the energy storage capacitor outputs high-voltage pulses to the load through the all-solid-state switch tube IGBT.

[0012] The plasma generator comprises a high-voltage electrode, a low-voltage electrode, an air inlet, a fan, an insulating layer and a temperature sensor, wherein the insulating layer is a shell with a hollow structure, the high-voltage electrode is located in the shell and has a gap with the inner wall of the shell, the low-voltage electrode is attached to the inner wall of the shell, the high-voltage electrode is connected to a high-voltage pulse output module, reaction chambers are respectively provided on the side walls of the shell, a jet port connected to the inside of the shell is provided at the bottom of the reaction chamber, the fan is installed in the reaction chamber, the temperature sensor is fixed on the side wall of the reaction chamber, and the air inlet is a through hole connecting the inside and outside of the shell,

[0013] When powered on, the high-voltage pulse generating system inputs high voltage to the plasma generator through the high-voltage pulse wire, generating an arc between the high-voltage electrode and the low-voltage electrode. At this time, inert gas is input into the plasma generator from the air inlet, and the inert gas enters the arc zone. The plasma beam generated by the inert gas discharge can be blown to the surface of the flow channel inside the artificial tissue through the injection port by the fan.

[0014] In the above structure: the high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue proposed in the present application includes a high-voltage pulse generating system, a high-voltage pulse transmission line and a plasma generator. The high-voltage pulse generating system is connected to the plasma generator through a high-voltage pulse wire, and the plasma generator is placed on the surface of the flow channel inside the artificial tissue. The high-voltage pulse generating system includes a DC power input module, a high-voltage pulse module and a control module. The high-voltage pulse module includes a boost module and a high-voltage pulse output module. The control module includes a switch control module and a surface temperature detection module.

[0015] Among them, the DC power input module and the switch control module are respectively connected to the boost module, the DC power input module is used to provide power for the high-voltage pulse module, the boost module is used to boost the input voltage, and the pulse emitted by the switch control module controls the opening and closing of the all-solid-state switch, the boost module is connected to the high-voltage pulse output module, and the boosted voltage is transmitted to the high-voltage pulse output module, the high-voltage pulse output module is connected to the plasma generator, and the surface temperature detection module is connected to the plasma generator. The surface temperature detection module can monitor the temperature change of the flow channel surface during the treatment process, and then adjust the output parameters of the high-voltage pulse, so as to more accurately and efficiently treat the flow channel surface inside the artificial tissue, and ensure the consistency and reliability of the treatment effect.

[0016] Among them, the boost module includes at least one all-solid-state device switch tube IGBT, at least one diode, and at least one capacitor; during the energy conversion process, the boost module will control the opening and closing of the all-solid-state device switch tube IGBT according to the pulse issued by the switch control module. When storing energy, the all-solid-state device switch tube IGBT is in the off state, and the energy storage capacitor is charged in parallel through the diode. When releasing energy, the all-solid-state device switch tube IGBT is in the on state, and the energy storage capacitor outputs high-voltage pulses to the load through the all-solid-state switch tube IGBT.

[0017] The plasma generator includes at least one high-voltage electrode, at least one low-voltage electrode, at least one air inlet, at least one fan, at least one insulating layer, and at least one temperature sensor. The specific working method is as follows:

[0018] After power is turned on, the DC power input module is boosted by the high-voltage pulse module and then inputs the boosted voltage to the plasma generator through the high-voltage pulse transmission line. The voltage is transmitted to the high-voltage electrode. At this time, an arc is generated between the high-voltage electrode and the low-voltage electrode. At this time, an inert gas is input from the air inlet into the plasma generator and enters the arc zone. According to the gas discharge characteristics, it is easier to discharge in places with low air pressure. Therefore, the fan can be set to blow the plasma beam generated by the discharge to the surface of the internal flow channel of the artificial tissue more easily. The fan is located in the reaction chambers on both sides, and the plasma injection port is located at the bottom of the reaction chamber. The injection port is respectively provided at the center of the bottom of the chamber, so that the plasma beam can efficiently reach the surface of the internal flow channel of the artificial tissue, eliminating the problem of uneven treatment of the internal part of the artificial tissue.

[0019] Preferably, the plasma generator is connected to the high-voltage pulse transmission line via threads.

[0020] Preferably, an opening is provided at one end of the shell, a fixing plate is installed on the opening, a through hole is provided on the fixing plate, an air intake pipe is installed in the through hole, and the air intake pipe is connected to the air inlet.

[0021] In the above structure: one end of the shell is provided with an opening for convenient installation and removal of the high-voltage electrode, the opening is closed by a fixing plate, a through hole is opened on the fixing plate, an air intake pipe is installed in the through hole, the air intake pipe is connected to the air inlet, and a suitable inert gas is transported through the air intake pipe.

[0022] Preferably, the high-voltage electrode is a conical electrode, and the low-voltage electrode is a metal conductive material attached to the inner surface of the shell.

[0023] In the above structure: the high-voltage electrode is a conical electrode, which is convenient for installation and fixation and has good effect; the low-voltage electrode is a metal conductive material attached to the inner surface of the shell, which is convenient for generating an arc zone between the high-voltage electrode.

[0024] Preferably, the temperature sensor is connected to a probe, the probe is placed in a reaction chamber on a side wall of a plasma generator, a patch adhesive is sprayed on a surface of the probe, and the probe is attached to the side wall of the plasma reaction chamber by the patch adhesive.

[0025] In the above structure: the temperature sensor uses the patch type pt100, the temperature sensor is connected to the probe, the probe is placed in the reaction chamber on the side of the plasma generator, the patch glue is sprayed on the probe surface of the temperature sensor, and it is attached to the side wall of the reaction chamber. The transmission line is connected to the digital control mainboard through a digital converter for precise control, which ensures the accuracy and safety of the processing.

[0026] As preferred: the inert gas is preferably nitrogen, oxygen, argon, or helium.

[0027] In the above structure: the inert gas preferably includes nitrogen, oxygen, argon, helium, etc. These gases can be used as carriers of plasma, and by controlling their flow and concentration, the intensity and rate of the reaction can be adjusted, so that the treatment effect is stable and controllable.

[0028] Compared with the prior art, the beneficial effects of the utility model are:

[0029] 1. The high-voltage pulse device proposed in this application includes a high-voltage pulse generating system, a high-voltage pulse transmission line, a plasma generator and artificial tissue, which can make the output of high-voltage pulses more accurate, improve the efficiency and stability of plasma generation, and reduce energy loss.

[0030] 2. The design of the plasma reaction chamber in the high-voltage pulse device proposed in this application can quickly process the surface of the vascularized flow channel in a short time, eliminating the problem of uneven surface treatment.

[0031] 3. The high-voltage pulse device proposed in this application is equipped with a temperature sensor on the surface of the plasma reaction chamber, which can monitor the temperature changes on the flow channel surface during the treatment process, and then adjust the output parameters of the high-voltage pulse to more accurately and efficiently treat the flow channel surface inside the artificial tissue, thereby ensuring the consistency and reliability of the treatment effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0033] Figure 2 It is the overall structural diagram of the utility model;

[0034] Figure 3 This is a boost circuit diagram of the utility model;

[0035] Figure 4 It is a cross-sectional schematic diagram of the plasma generator of the present utility model.

[0036] List of reference numerals:

[0037] 1. High-voltage pulse generating system; 2. High-voltage pulse transmission line; 3. Plasma generator; 30. High-voltage electrode; 31. Low-voltage electrode; 32. Air inlet; 33. Fan; 34. Insulation layer; 35. Air inlet pipe; 36. Fixing plate; 4. Internal flow channel surface of artificial tissue; 5. Artificial tissue. DETAILED DESCRIPTION

[0038] The present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods:

[0039] like Figure 1-4As shown, the utility model proposes a high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissues, including a high-voltage pulse generating system 1, a high-voltage pulse transmission line 2 and a plasma generator 3. The high-voltage pulse generating system 1 is connected to the plasma generator 3 through a high-voltage pulse wire. The plasma generator 3 is placed on the surface 4 of the flow channel inside the artificial tissue 5. The high-voltage pulse generating system 1 includes a DC power input module, a high-voltage pulse module and a control module. The high-voltage pulse module includes a boost module and a high-voltage pulse output module. The control module includes a switch control module and a surface temperature detection module. The DC power input module and the switch control module are respectively connected to the boost module. The boost module is connected to the high-voltage pulse output module. The high-voltage pulse output module is connected to the plasma generator 3. The surface temperature detection module is connected to the plasma generator 3.

[0040] The boost module includes at least one all-solid-state switch tube IGBT, at least one diode and at least one capacitor. During the energy conversion process, the boost module controls the on and off of the all-solid-state switch tube IGBT according to the pulses sent by the switch control module. When storing energy, the all-solid-state switch tube IGBT is in an off state, and the energy storage capacitor is charged in parallel through the diode. When releasing energy, the all-solid-state switch tube IGBT is in an on state, and the energy storage capacitor outputs high-voltage pulses to the load through the all-solid-state switch tube IGBT.

[0041] The plasma generator includes a high-voltage electrode 30, a low-voltage electrode 31, an air inlet 32, a fan 33, an insulating layer 34 and a temperature sensor. The insulating layer 34 is a shell with a hollow structure. The high-voltage electrode 30 is located in the shell and has a gap with the inner wall of the shell. The low-voltage electrode 31 is attached to the inner wall of the shell. The high-voltage electrode 30 is connected to a high-voltage pulse output module. Reaction chambers are respectively opened on the side walls of the shell. A jet port connected to the inside of the shell is opened at the bottom of the reaction chamber. The fan 33 is installed in the reaction chamber. The temperature sensor is fixed on the side wall of the reaction chamber. The air inlet 32 ​​is a through hole connecting the inside and outside of the shell.

[0042] When powered on, the high-voltage pulse generating system 1 inputs high voltage to the plasma generator through the high-voltage pulse wire, and an arc is generated between the high-voltage electrode 30 and the low-voltage electrode 31. At this time, inert gas is input into the plasma generator 3 from the air inlet 32, and the inert gas enters the arc zone. The plasma beam generated by the inert gas discharge can be blown to the internal flow channel surface 4 of the artificial tissue through the injection port by the fan 33.

[0043] The plasma generator 3 is connected to the high-voltage pulse transmission line 2 via threads.

[0044] The high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue proposed in the present application includes a high-voltage pulse generating system 1, a high-voltage pulse transmission line 2 and a plasma generator 3. The high-voltage pulse generating system 1 is connected to the plasma generator 3 via a high-voltage pulse line. The plasma generator 3 is placed on the surface 4 of the flow channel inside the artificial tissue. The high-voltage pulse generating system 1 includes a DC power input module, a high-voltage pulse module and a control module. The high-voltage pulse module includes a boost module and a high-voltage pulse output module. The control module includes a switch control module and a surface temperature detection module.

[0045] Among them, the DC power input module and the switch control module are respectively connected to the boost module, the DC power input module is used to provide power for the high-voltage pulse module, the boost module is used to boost the input voltage, and the pulse emitted by the switch control module controls the opening and closing of the all-solid-state switch, the boost module is connected to the high-voltage pulse output module, and the boosted voltage is transmitted to the high-voltage pulse output module, the high-voltage pulse output module is connected to the plasma generator 3, and the surface temperature detection module is connected to the plasma generator 3. The surface temperature detection module can monitor the temperature change of the flow channel surface during the treatment process, and then adjust the output parameters of the high-voltage pulse, so as to more accurately and efficiently treat the flow channel surface 4 inside the artificial tissue, and ensure the consistency and reliability of the treatment effect.

[0046] Among them, the boost module includes at least one all-solid-state device switch tube IGBT, at least one diode, and at least one capacitor; during the energy conversion process, the boost module will control the opening and closing of the all-solid-state device switch tube IGBT according to the pulse issued by the switch control module. When storing energy, the all-solid-state device switch tube IGBT is in the off state, and the energy storage capacitor is charged in parallel through the diode. When releasing energy, the all-solid-state device switch tube IGBT is in the on state, and the energy storage capacitor outputs high-voltage pulses to the load through the all-solid-state switch tube IGBT.

[0047] The plasma generator 3 includes at least one high-voltage electrode 30, at least one low-voltage electrode 31, at least one air inlet 32, at least one fan 33, at least one insulating layer 34, and at least one temperature sensor, and its specific working method is as follows:

[0048] After power is turned on, the DC power input module is boosted by the high-voltage pulse module and then inputs the boosted voltage to the plasma generator through the high-voltage pulse transmission line 2. The voltage is transmitted to the high-voltage electrode 30. At this time, an arc is generated between the high-voltage electrode 30 and the low-voltage electrode 31. At this time, an inert gas is input from the air inlet 32 ​​into the plasma generator 3 and enters the arc zone. According to the gas discharge characteristics, it is easier to discharge in places with low air pressure. Therefore, the fan 33 is set to make it easier to blow the plasma beam generated by the discharge to the internal flow channel surface 4 of the artificial tissue. The fan 33 is located in the reaction chambers on both sides, and the plasma injection port is located at the bottom of the reaction chamber. The injection port is respectively provided at the center of the bottom of the chamber, so that the plasma beam can efficiently reach the internal flow channel surface 4 of the artificial tissue, eliminating the problem of uneven treatment of the inside of the artificial tissue 5.

[0049] In this embodiment: an opening is provided at one end of the shell, a fixing plate 36 is installed on the opening, a through hole is provided on the fixing plate 36, an air inlet pipe 35 is installed in the through hole, and the air inlet pipe 35 is connected with the air inlet port 32. An opening is provided at one end of the shell for convenient installation and removal of the high-voltage electrode 30, the opening is closed by a fixing plate 36, a through hole is provided on the fixing plate 36, an air inlet pipe 35 is installed in the through hole, the air inlet pipe 35 is connected with the air inlet port 32, and an applicable inert gas is transported through the air inlet pipe 35.

[0050] In this embodiment: the high-voltage electrode 30 is a conical electrode, and the low-voltage electrode 31 is a metal conductive material attached to the inner surface of the shell. The high-voltage electrode 30 is a conical electrode, which is convenient for installation and fixation and has a good effect. The low-voltage electrode 31 is a metal conductive material attached to the inner surface of the shell, which is convenient for generating an arc zone with the high-voltage electrode 30.

[0051] In this embodiment: the temperature sensor is connected to a probe, the probe is placed in the reaction chamber on the side wall of the plasma generator 3, the probe surface is sprayed with patch glue, and it is attached to the side wall of the plasma reaction chamber through the patch glue. The temperature sensor uses a patch type pt100, the temperature sensor is connected to the probe, the probe is placed in the reaction chamber on the side of the plasma generator 3, the patch glue is sprayed on the probe surface of the temperature sensor, and it is attached to the side wall of the reaction chamber, and the transmission line is connected to the digital control mainboard through a digital converter for precise control, which ensures the accuracy and safety of the processing.

[0052] In this embodiment: the inert gas is preferably nitrogen, oxygen, argon, helium. The inert gas preferably includes nitrogen, oxygen, argon, helium, etc. These gases can be used as carriers of plasma. By controlling their flow and concentration, the intensity and rate of the reaction can be adjusted, so that the treatment effect is stable and controllable.

[0053] By setting the above structure, the present application can achieve the following technical effects:

[0054] 1. The high-voltage pulse device proposed in this application includes a high-voltage pulse generating system 1, a high-voltage pulse transmission line 2, a plasma generator 3 and an artificial tissue 5, which can make the output of high-voltage pulses more accurate, improve the efficiency and stability of plasma generation, and reduce energy loss.

[0055] 2. The design of the plasma reaction chamber in the high-voltage pulse device proposed in this application can quickly process the surface of the vascularized flow channel in a short time, eliminating the problem of uneven surface treatment.

[0056] 3. The high-voltage pulse device proposed in this application is equipped with a temperature sensor on the surface of the plasma reaction chamber, which can monitor the temperature changes on the flow channel surface during the treatment process, and then adjust the output parameters of the high-voltage pulse to more accurately and efficiently treat the flow channel surface 4 inside the artificial tissue, thereby ensuring the consistency and reliability of the treatment effect.

[0057] The above is only a preferred embodiment of the present invention and does not constitute any other limitation on the present invention. Any modification or equivalent change made based on the technical essence of the present invention still falls within the scope of protection required by the present invention.

Claims

1. A high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissues, characterized in that: The invention comprises a high-voltage pulse generating system (1), a high-voltage pulse transmission line (2) and a plasma generator (3), wherein the high-voltage pulse generating system (1) is connected to the plasma generator (3) via the high-voltage pulse line, and the plasma generator (3) is placed on the surface (4) of the internal flow channel of an artificial tissue (5). The high-voltage pulse generating system (1) comprises a DC power supply input module, a high-voltage pulse module and a control module, wherein the high-voltage pulse module comprises a boost module and a high-voltage pulse output module, and the control module comprises a switch control module and a surface temperature detection module, wherein the DC power supply input module and the switch control module are respectively connected to the boost module, wherein the boost module is connected to the high-voltage pulse output module, wherein the high-voltage pulse output module is connected to the plasma generator (3), and wherein the surface temperature detection module is connected to the plasma generator (3). The boost module includes at least one all-solid-state switch tube IGBT, at least one diode and at least one capacitor. During the energy conversion process, the boost module controls the on and off of the all-solid-state switch tube IGBT according to the pulses sent by the switch control module. When storing energy, the all-solid-state switch tube IGBT is in an off state, and the energy storage capacitor is charged in parallel through the diode. When releasing energy, the all-solid-state switch tube IGBT is in an on state, and the energy storage capacitor outputs high-voltage pulses to the load through the all-solid-state switch tube IGBT. The plasma generator comprises a high-voltage electrode (30), a low-voltage electrode (31), an air inlet (32), a fan (33), an insulating layer (34) and a temperature sensor, wherein the insulating layer (34) is a shell with a hollow structure, the high-voltage electrode (30) is located in the shell and has a gap with the inner wall of the shell, the low-voltage electrode (31) is attached to the inner wall of the shell, the high-voltage electrode (30) is connected to a high-voltage pulse output module, reaction chambers are respectively provided on the side walls of the shell, a jet port connected to the inside of the shell is provided at the bottom of the reaction chamber, the fan (33) is installed in the reaction chamber, the temperature sensor is fixed on the side wall of the reaction chamber, the air inlet (32) is a through hole connected to the inside and outside of the shell, When powered on, the high-voltage pulse generating system (1) inputs high voltage to the plasma generator through the high-voltage pulse wire, and an arc is generated between the high-voltage electrode (30) and the low-voltage electrode (31). At this time, an inert gas is input into the plasma generator (3) from the air inlet (32), and the inert gas enters the arc zone. The plasma beam generated by the discharge of the inert gas can be blown to the surface of the flow channel (4) inside the artificial tissue through the injection port by the fan (33).

2. The high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue according to claim 1, characterized in that: The plasma generator (3) is connected to the high-voltage pulse transmission line (2) via threads.

3. The high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue according to claim 1, characterized in that: An opening is provided at one end of the shell, a fixing plate (36) is mounted on the opening, a through hole is provided on the fixing plate (36), an air intake pipe (35) is mounted in the through hole, and the air intake pipe (35) is connected to the air inlet (32).

4. The high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue according to claim 1, characterized in that: The high-voltage electrode (30) is a conical electrode, and the low-voltage electrode (31) is a metal conductive material attached to the inner surface of the shell.

5. The high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue according to claim 1, characterized in that: The temperature sensor is connected to a probe, which is placed in a reaction chamber on the side wall of a plasma generator (3). The probe surface is sprayed with patch glue and is attached to the side wall of the plasma reaction chamber by the patch glue.

6. The high-voltage pulse device for surface treatment of vascularized flow channels inside artificial tissue according to claim 1, characterized in that: The inert gas is selected from nitrogen, oxygen, argon and helium.

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