Large-diameter polycrystalline silicon containing device for Czochralski silicon production

Abstract

A large-diameter polycrystalline silicon containing device for Czochralski silicon production comprises a bottom plate, a containing body, a transfer handle and a cover cap, heat dissipation through holes are formed in the bottom plate, a plurality of heat dissipation windows are formed in the outer side wall of the containing body in a hollowed-out mode, and the containing body is formed by a left component and a right component in a matched butt joint mode. The butt joint end of the right component extends outwards to be provided with a connecting piece of a frustum-shaped structure, the small bottom end of the connecting piece of the frustum-shaped structure is connected to the right component, and the butt joint position of the left component is provided with a frustum-shaped containing groove for the connecting piece to slide in and out from the upper end of the frustum-shaped containing groove. The containing groove is matched with the connecting piece so that radial locking type matched butt joint between the left component and the right component can be achieved. The large-diameter polycrystalline silicon containing device is convenient to disassemble and assemble, can well contain and transfer large-diameter polycrystalline silicon, can achieve rapid heat dissipation, can effectively prevent personnel from being scalded when the large-diameter polycrystalline silicon is taken out and transferred, and is high in practicability, safety and reliability.

Description

Technical Field

[0001] The utility model relates to the technical field of devices for producing direct-pulled single-crystal silicon, in particular to a device for containing objects produced during the pulling process of single-crystal silicon with a large diameter of 8 inches or more. Technical Background

[0002] In the field of semiconductor technology, during the single crystal pulling process, abnormal operation of the single crystal furnace caused by factors such as quartz crucible abnormalities, equipment abnormalities, human misoperation, unstable quality of raw and auxiliary materials, or imperfect process SOP will lead to difficulties in crystallization.

[0003] In addition, as the thermal field continues to increase, the amount of material fed also increases. The temperature of the molten silicon liquid surface is difficult to stabilize when the material is first fed, and it usually contains impurities. Multiple lead-in and release operations may be required, resulting in longer operating time, and ultimately even the inability to pull single crystals normally, resulting in increased production costs for pulling single crystals, and reduced single crystal formation rate and yield rate.

[0004] To solve the above problems, regardless of whether crystallization has not occurred for a long time or impurities exist in the molten silicon, it is necessary to remove a portion of the polycrystals through operations such as seeding and shouldering. The main purpose is to remove impurities on the surface of the molten silicon and reduce the dislocation caused by impurities that leads to unsmooth crystallization. Removing a portion of the polycrystals can make the crystallization liquid surface more stable. Another more important purpose is to change the position of the crystallization interface. After the polycrystals are removed, the position of the seeding crucible changes, so the gradient of the crystallization interface changes, so that further crystal pulling can be better carried out.

[0005] At present, there is no special holding device for placing and transporting polysilicon extracts during the large-diameter single crystal silicon pulling process in the prior art. Summary of the invention

[0006] The technical purpose of the utility model is to provide a device for holding polysilicon extractors when crystallization is not smooth during the large-diameter single-crystal silicon pulling process. The device is easy to disassemble and assemble, can better hold and transport large-diameter polysilicon, and can achieve rapid heat dissipation, which can effectively prevent scalding of personnel when large-diameter polysilicon is extracted and transported, and has strong practicality, high safety and reliability.

[0007] In order to achieve the above technical objectives, the technical solution adopted by the utility model is: a large-diameter polysilicon holding device for direct-pull single-crystal silicon production, comprising a base plate, a holding body arranged on the base plate, a transfer handle installed on the outer wall of the holding body, and a cover detachably connected to the top of the holding body, a heat dissipation through-hole smaller than the size of the polysilicon to be held is opened on the base plate, and a plurality of heat dissipation windows are hollowed out on the outer wall of the holding body, the holding body is composed of a left component and a right component that are mated together, the mating end of the right component extends outwardly to be provided with a connecting piece with a frustum-shaped structure, and the small bottom end of the frustum-shaped connecting piece is connected to the right component, and a frustum-shaped receiving groove is opened at the mating part of the left component for the connecting piece to slide in and out from its upper end, and the cooperation between the receiving groove and the connecting piece can realize the radial locking mating between the left component and the right component.

[0008] Preferably, the cover is an inverted funnel-shaped structure, and a limiting groove for accommodating the upper edge of the main body is provided on the lower end surface of the cover.

[0009] Preferably, a heat dissipation hole is also provided at the top of the funnel-shaped cover.

[0010] Preferably, the heat dissipation through hole is opened at the center of the bottom plate, and the diameter of the heat dissipation through hole is 80-110 mm.

[0011] Preferably, the heat dissipation window is in a rectangular structure, and a plurality of heat dissipation windows are symmetrically arranged on the outer side wall of the containing body.

[0012] Preferably, the number of heat dissipation windows on the container body is 12, and the area of ​​each heat dissipation window is 90-110 cm 2 .

[0013] Preferably, the containing body is a cylindrical structure with a diameter of 300-330 mm.

[0014] Preferably, the left component and the right component are both hollow semicircular ring structures.

[0015] Preferably, the bottom end of the left component is welded and fixed to the bottom plate.

[0016] Preferably, the transfer handle is fixed on the left component and has a rectangular frame structure.

[0017] Beneficial effects:

[0018] The utility model discloses a large-diameter polysilicon holding device for the production of direct-pull single-crystal silicon, which has a simple structure, reasonable design and is easy to use. The holding body in the device is composed of a left component and a right component of two semicircular ring structures that are connected and assembled, so that the device as a whole is easy to install and disassemble when transporting large-diameter polysilicon, and it is convenient to take out the contents. The provision of multiple heat dissipation windows on the holding body also allows the holding device to dissipate heat quickly, which helps to improve production and processing efficiency. The provision of a cover on the top of the device can effectively prevent burns to operators when accidentally touching it, and has good safety and reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the structure of the utility model;

[0020] Figure 2 It is a schematic diagram of the longitudinally cut structure of the utility model;

[0021] Figure 3 This is a schematic diagram of the structure of the bottom plate, the containing body and the transport handle in the utility model;

[0022] Figure 4 for Figure 3 Schematic diagram of the disassembled structure;

[0023] Markings in the figure: 1. bottom plate; 2. containing body; 201. left component; 202. right component; 3. transfer handle; 4. cover; 5. polysilicon to be contained; 6. heat dissipation through hole; 7. heat dissipation window; 8. connector; 9. containing groove. DETAILED DESCRIPTION

[0024] The utility model is further described in detail below in conjunction with the accompanying drawings and specific embodiments, but the utility model is not limited to the following embodiments. The purpose of disclosing the utility model is to protect all changes and improvements within the scope of the utility model.

[0025] As shown in the figure, the utility model is a large-diameter polysilicon holding device for direct-pulling single-crystal silicon production, which is used for holding large-diameter polysilicon extracts when large-diameter single-crystal silicon is not pulled and crystallized smoothly. The new device can quickly dissipate heat, hold large-diameter polysilicon, be easy to disassemble and assemble, and prevent burns. The specific structure includes a bottom plate 1, a holding body 2 set on the bottom plate 1, a transfer handle 3 installed on the outer wall of the holding body 2, and a cover 4 detachably connected to the top of the holding body 2. A heat dissipation through hole 6 smaller than the size of the polysilicon 5 to be held is opened on the bottom plate 1. The heat dissipation through hole 6 is opened at the center of the bottom plate 1, and the diameter of the heat dissipation through hole 6 is 80-110mm. A plurality of heat dissipation windows 7 are hollowed out on the outer wall of the holding body 2. The heat dissipation window 7 is a rectangular structure, and the plurality of heat dissipation windows 7 are symmetrically arranged on the outer wall of the holding body 2. The area of ​​each heat dissipation window 7 is 90-110 cm 2.

[0026] The holding body 2 is composed of a left component 201 and a right component 202 that are mated together. The mating end of the right component 202 is extended outward to be provided with a connecting piece 8 of a truncated cone structure, and the small bottom end of the connecting piece 8 of the truncated cone structure is connected to the right component 202. The left component 201 is provided with a truncated cone-shaped receiving groove 9 for the connecting piece 8 to slide in and out from its upper end at the mating part. The matching of the receiving groove 9 and the connecting piece 8 can realize the radial locking matching and docking between the left component 201 and the right component 202. The cover 4 is an inverted funnel-shaped structure, and a limiting groove for accommodating the upper edge of the holding body 2 is also provided on the lower end surface of the cover 4. A heat dissipation through hole 6 is also provided at the top of the funnel-shaped cover 4.

[0027] Preferably, the containing body 2 is a cylindrical structure with a diameter of 300-330 mm.

[0028] Preferably, the left member 201 and the right member 202 are both hollow semicircular ring structures. The bottom end of the left member 201 is welded and fixed on the bottom plate 1. The transport handle 3 is fixed on the left member 201 and is in a rectangular frame structure.

[0029] The utility model discloses a large-diameter polysilicon containing device for producing direct-pull single-crystal silicon. The whole is made of stainless steel, which has fast heat dissipation and is resistant to high temperatures. The containing body in the containing device is a detachable structure, and the connection method is a T-type connection. The cover on the top can prevent people from being burned by accidental touch.

[0030] The structural features of the holding device are:

[0031] Feature 1: The container body is a cylindrical structure with a diameter of about 320mm, which can hold 6-12 inch extracts. There is an opening on the bottom plate with a diameter of about 100mm. The diameter of the opening should not be too large to prevent polycrystalline from leaking out and causing burns. The purpose of the bottom opening is to dissipate heat;

[0032] Feature 2: There are 12 rectangular openings on the cylindrical container body, mainly for heat dissipation, and each opening area is about 100cm 2 , the number of openings is generally greater than 10, but at the same time it should not be too many to prevent deformation of the structure;

[0033] Feature 3: A cylindrical square handle is designed on the cylindrical container body to avoid burns from the taken out objects. The rectangular handle is convenient for both hands to hold tightly and has a stable structure.

[0034] Feature 4: The disassembly device is connected in a T-shaped structure, which is simple in structure and convenient for assembly and disassembly. It can be directly slid out from bottom to top; that is, when in use, the connecting piece on the right component can be directly put into the receiving groove on the left component from top to bottom;

[0035] Feature 5: A slot cover is designed on the top of the cylindrical container. After putting the objects in, the cover can prevent accidental contact and burns.

[0036] When the large-diameter polysilicon holding device for producing Czochralski silicon is used, the specific steps are as follows:

[0037] 1. If some polycrystalline needs to be removed for various reasons, generally about 2-5 kg ​​is required. The staff will pull the polycrystalline silicon to the specified removal weight through operations such as seeding, shouldering and equal diameter;

[0038] 2. Remove the cover of the containing device, slide the right component in the containing body from top to bottom into the left component, and make the connecting piece on the right component slide into the bottom of the accommodating groove of the left component to complete the splicing of the containing body;

[0039] 3. The extract is quickly lifted about 20 mm from the liquid surface, and then lifted up at a speed of 500 mm / h. After 1 hour, the polycrystal is quickly lifted to the auxiliary chamber, and then the air is guided to open the door, and the holding device of the present invention is placed on the gate valve under the auxiliary chamber, and then the extract is slowly placed in the holding device of the present invention. After the extract contacts the bottom plate, the seed crystal is cut off, and the transfer handles are held with both hands to take the extract out of the auxiliary chamber, and then the cover is covered, and it is placed on the operating table and cooled at room temperature;

[0040] 4. Clean and close the auxiliary chamber, then open the gate valve after gas conduction to continue seeding and other operations.

[0041] Finally, it should be noted that the above is only a preferred embodiment of the utility model and is not intended to limit the utility model. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art can still modify the technical solutions recorded in the above embodiments or replace some of the technical features therein with equivalents. Any modification, equivalent replacement, improvement, etc. made within the scope of the invention should be included in the scope of protection of the utility model.

Claims

1. A large-diameter polysilicon holding device for producing CZ silicon monocrystalline, characterized in that: The invention comprises a bottom plate (1), a receiving body (2) arranged on the bottom plate (1), a transfer handle (3) installed on the outer side wall of the receiving body (2), and a cover (4) detachably connected to the top of the receiving body (2), a heat dissipation through hole (6) smaller than the size of the polysilicon (5) to be received is provided on the bottom plate (1), and a plurality of heat dissipation windows (7) are hollowed out on the outer side wall of the receiving body (2), and the receiving body (2) is composed of a left component (201) and a right component (202). The right member (202) is provided with a connecting piece (8) with a frustum-shaped structure extending outward from the butt end of the right member (202), and the small bottom end of the connecting piece (8) with a frustum-shaped structure is connected to the right member (202). The butt joint of the left member (201) is provided with a frustum-shaped receiving groove (9) for the connecting piece (8) to slide in and out from the upper end thereof. The cooperation between the receiving groove (9) and the connecting piece (8) can realize the radial locking cooperation and butt joint between the left member (201) and the right member (202).

2. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1, characterized in that: The cover (4) is an inverted funnel-shaped structure, and a limiting groove for accommodating the upper edge of the main body (2) is provided on the lower end surface of the cover (4).

3. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 2, characterized in that: A heat dissipation through hole (6) is also provided at the top of the funnel-shaped cover (4).

4. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1, characterized in that: The heat dissipation through hole (6) is opened at the center of the bottom plate (1), and the diameter of the heat dissipation through hole (6) is 80-110 mm.

5. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1, characterized in that: The heat dissipation window (7) is of rectangular structure, and a plurality of heat dissipation windows (7) are symmetrically arranged on the outer side wall of the containing body (2).

6. A large-diameter polysilicon holding device for producing Czochralski silicon monocrystalline according to claim 1 or 5, characterized in that: The number of heat dissipation windows (7) on the main body (2) is 12, and the area of ​​each heat dissipation window (7) is 90-110 cm 2 .

7. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1, characterized in that: The containing body (2) is a cylindrical structure with a diameter of 300-330 mm.

8. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1, characterized in that: The left component (201) and the right component (202) are both hollow semicircular ring structures.

9. A large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1 or 8, characterized in that: The bottom end of the left component (201) is welded and fixed on the bottom plate (1).

10. The large-diameter polysilicon holding device for producing CZ silicon monocrystalline according to claim 1, characterized in that: The transfer handle (3) is fixed on the left component (201) and has a rectangular frame structure.

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