Dehydrogenation device

Abstract

The utility model discloses a dehydrogenation device. The dehydrogenation device comprises a furnace body, a carrying table and a single crystal crucible, a furnace cavity is formed in the furnace body, the carrying table is arranged in the furnace cavity, the single crystal crucible is selectively arranged in the furnace cavity, and the single crystal crucible is provided with an arc-shaped crucible bottom and is arranged on the carrying table. Therefore, the purity of the high-purity layer in the single-crystal crucible is high, the problems of powder falling and coating falling are avoided, pollution caused by diffusion of impurities in the single-crystal crucible to particle silicon at high temperature is reduced, and in addition, the single-crystal crucible is high in strength, good in high-temperature stability, long in service life at high temperature and low in cost. The dehydrogenation efficiency of the dehydrogenation device can be improved, and the dehydrogenation cost can be reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of removing hydrogen atoms from the surface of granular silicon, in particular to a dehydrogenation device. Background Art

[0002] The fluidized bed method generally uses SiH4 or SiCl4 as the silicon source gas and hydrogen as the carrier gas. The silicon is grown on the pre-set silicon powder in the fluidized bed through chemical vapor deposition reaction at 500-700 degrees. As the reaction proceeds, the grown granular silicon products are continuously discharged at the bottom of the fluidized bed, and a small amount of silicon powder by-products of about 5%-15% is generated.

[0003] The fluidized bed method has a simple equipment structure, low investment, and high production efficiency, but it is easy to cause impurity contamination, which reduces the purity of the product. Due to the large specific surface area of ​​granular silicon, it is easy to absorb hydrogen. Due to the small size of hydrogen atoms, they have a strong adsorption capacity on the surface of granular silicon. After the granular silicon is melted under low pressure, a hydrogen jump phenomenon occurs. The hydrogen content of granular silicon prepared by the fluidized bed method is generally around 30ppma. The hydrogen adsorbed on its surface will produce a hydrogen jump phenomenon during the melting process. Granular silicon with smaller particle size will sputter to the bottom edge of the guide tube and fall during the crystal pulling process, resulting in an increase in the break rate of single crystal silicon rods, affecting production efficiency.

[0004] Granular silicon can be heated and dehydrogenated using an ingot furnace, but the purity of the polycrystalline crucible is low, and its coating will fall off and slag, and the impurities produced will diffuse into the granular silicon and cause pollution. At the same time, continuous heating and insulation at high temperatures have high requirements on the heat resistance and strength of the crucible. The strength and heat resistance of polycrystalline crucibles are low, and most of them are disposable consumables, which is not conducive to reducing the cost of dehydrogenation. Utility Model Content

[0005] In view of this, the present invention aims to solve one of the problems in the related art at least to a certain extent. To this end, the purpose of the present invention is to provide a dehydrogenation device.

[0006] The dehydrogenation device of the embodiment of the present application includes a furnace body, a carrier and a single crystal crucible. The furnace body forms a furnace cavity. The carrier is arranged in the furnace cavity. The single crystal crucible is selectively arranged in the furnace cavity. The single crystal crucible has an arc-shaped crucible bottom and is arranged on the carrier.

[0007] In this way, the high-purity layer inside the single crystal crucible has a higher purity, and there will be no problems of powder loss and coating peeling, which reduces the pollution caused by the diffusion of impurities in the single crystal crucible into the granular silicon at high temperature. In addition, the single crystal crucible has high strength, good high-temperature stability, and a long service life at high temperatures, which can improve the dehydrogenation efficiency of the dehydrogenation device and reduce the cost of dehydrogenation.

[0008] In certain embodiments, the dehydrogenation device includes a crucible support for supporting the arc-shaped crucible bottom, and the crucible support rests on the carrier.

[0009] In this way, the crucible support can support and protect the bottom of the single crystal crucible when the single crystal crucible is heated, and prevent the bottom of the single crystal crucible from collapsing when it is at a high temperature.

[0010] In certain embodiments, the dehydrogenation apparatus includes a crucible sling surrounding the single crystal crucible, the crucible sling resting on a crucible support.

[0011] In this way, the crucible can support and protect the side wall of the single crystal crucible when the single crystal crucible is heated, preventing the side wall of the single crystal crucible from collapsing when it is at a high temperature.

[0012] In certain embodiments, the top surface of the single crystal crucible has an opening, and the dehydrogenation device includes a cover plate, which covers the opening of the single crystal crucible.

[0013] In this way, granular silicon can be poured into the single crystal crucible through the opening of the single crystal crucible, and the cover plate covers the opening of the single crystal crucible to prevent oxide impurities in the external environment from entering the single crystal crucible during dehydrogenation of the granular silicon and affecting the dehydrogenation of the granular silicon.

[0014] In certain embodiments, an exhaust channel is formed between the top surface of the single crystal crucible and the cover plate; and / or, the cover plate is formed with vent holes, which penetrate through both sides of the cover plate in the thickness direction.

[0015] In this way, when the single crystal crucible dehydrogenates granular silicon, the gas and hydrogen introduced into the single crystal crucible can be discharged from the single crystal crucible through the exhaust channel and / or the air hole after the gas enters the single crystal crucible, thereby forming a unidirectional airflow, which is not easy to cause stuffiness and is beneficial to the dehydrogenation of granular silicon.

[0016] In some embodiments, a gas injection hole is provided on the cover plate, and the dehydrogenation device includes a guide tube, which corresponds to the gas injection hole and is used to continuously introduce gas into the single crystal crucible through the gas injection hole.

[0017] In this way, by arranging gas injection holes on the cover plate, gas can be injected into the single crystal crucible through the gas injection holes through the guide tube during dehydrogenation of granular silicon, so that the hydrogen generated by the dehydrogenation of granular silicon can be discharged out of the single crystal crucible along with the gas from the exhaust channel and / or the vent hole, thereby ensuring smooth gas flow in the single crystal crucible and improving the dehydrogenation efficiency of the granular silicon.

[0018] In some embodiments, a gap is formed between the guide tube and the hole wall of the gas injection hole.

[0019] In this way, when the single crystal crucible dehydrogenates granular silicon, after the gas enters the single crystal crucible, the gas and hydrogen introduced into the single crystal crucible can be discharged from the single crystal crucible through the gap between the guide tube and the hole wall of the gas injection hole, thereby forming a unidirectional airflow, which is not easy to cause stuffiness and is beneficial to the dehydrogenation of granular silicon.

[0020] In some embodiments, the cover plate is made of graphite or carbon-carbon material.

[0021] In this way, the light weight but high temperature resistance characteristics of graphite or carbon-carbon materials are utilized to reduce the weight of the cover plate and facilitate high temperature heating of the dehydrogenation process.

[0022] In some embodiments, the carrier includes a base and a carrying plate detachably connected to the base, and the crucible support rests on the carrying plate.

[0023] In this way, the carrying plate can carry the crucible support, thereby improving the stability of the single crystal crucible when moving from outside the furnace chamber to inside the furnace chamber.

[0024] In certain embodiments, the carrier plate is a graphite plate.

[0025] In this way, the carrier plate has the characteristics of high temperature resistance and good thermal conductivity, which is convenient for high-temperature heating during the dehydrogenation process.

[0026] In certain embodiments, the dehydrogenation device includes a heating device, which is disposed on the upper side and / or the outer side wall of the single crystal crucible.

[0027] In this way, the heating device can heat the single crystal crucible so that the single crystal crucible reaches the required heating temperature, which is convenient for dehydrogenating the granular silicon.

[0028] In certain embodiments, the dehydrogenation device includes a heat preservation device, and the heat preservation device wraps the furnace cavity.

[0029] In this way, the heat preservation device can keep the ambient temperature inside the furnace chamber stable, reduce heat loss, improve the dehydrogenation efficiency of the dehydrogenation device and reduce the cost of dehydrogenation.

[0030] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0032] Figure 1 is a schematic structural diagram of a dehydrogenation device according to an embodiment of the present application;

[0033] Figure 2 is a schematic structural diagram of a single crystal crucible according to an embodiment of the present application;

[0034] Figure 3 It is a schematic structural diagram of a crucible support according to an embodiment of the present application;

[0035] Figure 4It is a schematic structural diagram of a single crystal crucible and a crucible bond on a crucible holder according to an embodiment of the present application;

[0036] Figure 5 It is a schematic diagram of the structure of the Brahbang according to the implementation mode of the present application.

[0037] Reference numerals of main components: 100, dehydrogenation device; 10, furnace body; 11, furnace chamber; 12, surrounding wall; 13, exhaust port; 20, carrier; 21, base; 22, carrier plate; 30, single crystal crucible; 31, opening; 40, crucible support; 50, crucible bang; 60, cover plate; 61, exhaust channel; 62, gas injection hole; 70, guide tube; 80, heating device; 90, insulation device. DETAILED DESCRIPTION

[0038] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0039] In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance, or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0040] In the description of the present utility model, it should be noted that, unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense, and may refer to fixed connection, detachable connection, or integral connection; mechanical connection, electrical connection, or mutual communication; direct connection, indirect connection through an intermediate medium, internal connection between two elements, or interaction between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.

[0041] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention may repeat reference numbers and / or reference letters in different examples, and such repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0042] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0043] See also Figure 1 and Figure 2 The dehydrogenation device 100 of the embodiment of the present application includes a furnace body 10, a carrier 20 and a single crystal crucible 30. The furnace body 10 forms a furnace cavity 11. The carrier 20 is arranged in the furnace cavity 11. The single crystal crucible 30 is selectively arranged in the furnace cavity 11. The single crystal crucible 30 has an arc-shaped crucible bottom and is arranged on the carrier 20.

[0044] In this way, the high-purity layer inside the single crystal crucible 30 has a higher purity, and there will be no problems of powder loss and coating peeling, which reduces the pollution caused by the diffusion of impurities in the single crystal crucible 30 into the granular silicon at high temperature. In addition, the single crystal crucible 30 has higher strength, good high-temperature stability, and a longer service life at high temperatures, which can improve the dehydrogenation efficiency of the dehydrogenation device 100 and reduce the cost of dehydrogenation.

[0045] Specifically, the dehydrogenation device 100 can be used as a heating device, and the single crystal crucible 30 can be used as a reaction container. The single crystal crucible 30 is used in the dehydrogenation device 100 to perform dehydrogenation treatment on granular silicon.

[0046] The furnace body 10 may be a rectangular parallelepiped structure or a cylindrical structure. The furnace cavity 11 is a containing space formed inside the furnace body 10 , which may contain components such as the carrier 20 and the single crystal crucible 30 .

[0047] In one embodiment, the structure of the single crystal crucible 30 is divided into a bubble composite layer and a bubble depletion layer. The bubble composite layer is made of high-purity quartz powder, contains a large number of evenly distributed bubbles inside, has a heat preservation effect, and can make the quartz crucible evenly heated, while the bubble depletion layer does not contain bubbles inside and is evenly dense, has the function of anti-deformation and isolating silicon liquid from the bubble layer. Semiconductor quartz crucibles have high requirements on the raw material composition of the quartz sand of the inner coating, and the content of impurity elements in the quartz sand determines the quality of the single crystal crucible 30 and the quality of the dehydrogenated granular silicon.

[0048] The sizes of the single crystal crucible 30 can be 30 inches, 33 inches and 36 inches. The weight of the granular silicon in the single crystal crucible 30 can be adjusted according to the size of the single crystal crucible 30. For example, the maximum filling amount of a 36-inch single crystal crucible 30 is 600 kg, that is, a 36-inch single crystal crucible 30 can accommodate granular silicon of different weights such as 400 kg, 450 kg, 500 kg, 550 kg, and 600 kg.

[0049] See also Figure 1 and Figure 3 In some embodiments, the dehydrogenation device 100 includes a crucible support 40 for supporting the arc-shaped crucible bottom, and the crucible support 40 rests on the carrier 20 .

[0050] In this way, the crucible support 40 can support and protect the bottom of the single crystal crucible 30 when the single crystal crucible 30 is heated, and prevent the bottom of the single crystal crucible 30 from collapsing when it is at a high temperature.

[0051] Specifically, the single crystal crucible 30 can be arranged on the crucible support 40 by snapping or screwing, so as to facilitate the installation and removal of the single crystal crucible 30. The center of the crucible support 40 can extend outward to form a circular boss, and the arc-shaped crucible bottom of the single crystal crucible 30 can cooperate with the boss. The crucible support 40 is detachably placed on the carrier 20. The crucible support 40 can be composed of a carbon-carbon composite material or a graphite material so that the crucible support 40 can withstand high temperatures.

[0052] See also Figure 1 , Figure 4 and Figure 5 In some embodiments, the dehydrogenation device 100 includes a crucible 50 surrounding the single crystal crucible 30 , and the crucible 50 rests on the crucible support 40 .

[0053] In this way, the crucible 50 can support and protect the side wall of the single crystal crucible 30 when the single crystal crucible 30 is heated, and prevent the side wall of the single crystal crucible 30 from collapsing when it is at a high temperature.

[0054] Specifically, the shape of the crucible 50 can be a bottomless circular bowl, and the crucible 50 can be arranged on the crucible support 40 by snapping or screwing, so as to facilitate the installation and removal of the crucible 50. The height of the crucible 50 can be lower than the height of the single crystal crucible 30, and the shape of the inner wall of the bottom of the crucible 50 can match the shape of the outer wall of the boss, so that the crucible 50 can be covered on the outside of the single crystal crucible 30 to support and protect the side wall of the single crystal crucible 30. The crucible 50 can be made of carbon-carbon composite material or graphite material, so that the crucible 50 can withstand high temperatures.

[0055] See also Figure 1 and Figure 2 In some embodiments, the top surface of the single crystal crucible 30 has an opening 31 , and the dehydrogenation device 100 includes a cover plate 60 , which covers the opening 31 of the single crystal crucible 30 .

[0056] In this way, granular silicon can be poured into the single crystal crucible 30 through the opening 31 of the single crystal crucible 30, and the cover plate 60 covers the opening 31 of the single crystal crucible 30 to prevent oxide impurities in the external environment from entering the single crystal crucible 30 during dehydrogenation of the granular silicon and affecting the dehydrogenation of the granular silicon.

[0057] Specifically, the cover plate 60 may be made of carbon-carbon material, graphite material or silicon nitride material. The shape of the cover plate 60 may match the shape of the single crystal crucible 30, that is, when the shape of the single crystal crucible 30 is a columnar body, the shape of the cover plate 60 may also be a circle, so that the cover plate 60 can be detachably connected to the single crystal crucible 30 and cover the opening 31 of the single crystal crucible 30.

[0058] See also Figure 1 In some embodiments, an exhaust channel 61 is formed between the top surface of the single crystal crucible 30 and the cover plate 60; and / or, the cover plate 60 is formed with vents that penetrate through both sides of the cover plate 60 in the thickness direction.

[0059] In this way, when the single crystal crucible 30 dehydrogenates granular silicon, after the gas enters the single crystal crucible 30, the gas and hydrogen introduced into the single crystal crucible 30 can be discharged from the single crystal crucible 30 through the exhaust channel 61 and / or the air hole, forming a unidirectional airflow, which is not easy to cause stuffiness and is beneficial to the dehydrogenation of granular silicon.

[0060] Specifically, the number of the exhaust channel 61 and the vent hole can be one, two, three or more, and the exhaust channel 61 can be the gap between the top surface of the single crystal crucible 30 and the cover plate 60, or can be a groove formed by extending from the top surface of the single crystal crucible 30 toward the bottom of the crucible. The gas and hydrogen introduced into the single crystal crucible 30 can be discharged from the single crystal crucible 30 through the exhaust channel 61, can be discharged from the single crystal crucible 30 through the vent hole, or can be discharged from the single crystal crucible 30 through the exhaust channel 61 and the vent hole at the same time.

[0061] See also Figure 1 In some embodiments, a gas injection hole 62 is provided on the cover plate 60 , and the dehydrogenation device 100 includes a guide tube 70 , which corresponds to the gas injection hole 62 , and is used to continuously introduce gas into the single crystal crucible 30 through the gas injection hole 62 .

[0062] In this way, by setting the gas injection hole 62 on the cover plate 60, when the granular silicon is dehydrogenated, gas can be injected into the single crystal crucible 30 through the gas injection hole 62 through the guide tube 70, so that the hydrogen generated by the dehydrogenation of the granular silicon can be discharged from the single crystal crucible 30 along with the gas from the exhaust channel 61 and / or the vent hole, thereby ensuring smooth gas flow in the single crystal crucible 30 and improving the dehydrogenation efficiency of the granular silicon.

[0063] Specifically, the gas injection hole 62 may be a through hole located at the center of the cover plate 60. The gas may be argon, which may be used as a carrier gas, i.e., argon is often used as a carrier gas in the dehydrogenation process. The argon flows through the single crystal crucible 30 containing the granular silicon, and takes away the hydrogen released from the granular silicon. Since argon is an inert gas, it does not react chemically with other substances at room temperature, and does not dissolve in liquid metal at high temperature, which helps to maintain the purity of the dehydrogenation reaction environment.

[0064] The guide tube 70 may be in the shape of an elongated cylinder and may be located on the upper portion of the cover plate 60. One end of the guide tube 70 away from the cover plate 60 is connected to an external pipeline. The guide tube 70 may be made of graphite or carbon-carbon material.

[0065] See also Figure 1 In some embodiments, a gap is formed between the guide tube 70 and the hole wall of the gas injection hole 62.

[0066] In this way, when the single crystal crucible 30 dehydrogenates granular silicon, after the gas enters the single crystal crucible 30, the gas and hydrogen introduced into the single crystal crucible 30 can be discharged from the single crystal crucible 30 through the gap between the guide tube 70 and the hole wall of the gas injection hole 62, thereby forming a unidirectional airflow, which is not easy to cause suffocation and is beneficial to the dehydrogenation of granular silicon.

[0067] Specifically, the gas injection hole 62 may be a circular hole or a square hole. When the gas injection hole 62 is a circular hole, the outer diameter of the guide tube 70 may be smaller than the diameter of the gas injection hole 62; when the gas injection hole 62 is a square hole, the outer diameter of the guide tube 70 may be smaller than the side length of the gas injection hole 62, so that a gap is formed between the outer wall of the guide tube 70 and the hole wall of the gas injection hole 62.

[0068] In one embodiment, the dehydrogenation device 100 includes a surrounding wall 12, which is arranged outside the furnace body 10. The surrounding wall 12 is provided with an exhaust port 13, and the exhaust port 13 runs through both sides of the surrounding wall 12 in the thickness direction. The gas and hydrogen extracted from the single crystal crucible 30 can be discharged to the outside through the exhaust port 13.

[0069] In some embodiments, the cover plate 60 is made of graphite or carbon-carbon material.

[0070] In this way, the light weight but high temperature resistance characteristics of graphite or carbon-carbon materials are utilized to reduce the weight of the cover plate 60 and facilitate high temperature heating during the dehydrogenation process.

[0071] Specifically, the cover plate 60 and the guide tube 70 can be made of structural materials such as graphite material or carbon-carbon material with an operating temperature greater than 1500° C. The guide tube 70 and the cover plate 60 can be integrally formed or separately formed, and are fixedly connected by a connection structure such as a thread, and the two are inseparable during the operation of the dehydrogenation device 100.

[0072] See also Figure 1 In some embodiments, the carrier 20 includes a base 21 and a carrying plate 22 detachably connected to the base 21 , and the crucible support 40 rests on the carrying plate 22 .

[0073] In this way, the carrying plate 22 can carry the crucible holder 40 , thereby improving the stability of the single crystal crucible 30 when moving from outside the furnace chamber 11 to inside the furnace chamber 11 .

[0074] Specifically, the base 21 can be a DS block, and the base 21 and the carrying plate 22 can be square plate structures or circular plate structures. The base 21 is located on the side of the carrying plate 22 away from the crucible support 40, and the crucible support 40 is detachably placed on the carrying plate 22.

[0075] In certain embodiments, the carrier plate 22 is a graphite plate.

[0076] In this way, the supporting plate 22 has the characteristics of high temperature resistance and good thermal conductivity, which is convenient for high temperature heating during the dehydrogenation process.

[0077] Specifically, the support plate 22 may be made of structural materials with a working temperature greater than 1500° C., such as graphite material or carbon-carbon material.

[0078] See also Figure 1 In some embodiments, the dehydrogenation device 100 includes a heating device 80 , which is disposed above and / or on the outer side wall of the single crystal crucible 30 .

[0079] In this way, the heating device 80 can heat the single crystal crucible 30 so that the single crystal crucible 30 reaches the required heating temperature, which is convenient for dehydrogenating the granular silicon.

[0080] Specifically, the heating device 80 can be disposed above and / or on the outer side wall of the single crystal crucible 30, including the following three situations: (1) the heating device 80 is disposed above the single crystal crucible 30; (2) the heating device 80 is disposed on the outer side wall of the single crystal crucible 30; (3) the heating device 80 is disposed on both the upper side and the outer side wall of the single crystal crucible 30. For example, Figure 1 As shown, heating devices 80 are provided on the upper part and the side of the single crystal crucible 30, so that the single crystal crucible 30 can reach a higher heating temperature more quickly and the granular silicon inside the single crystal crucible 30 can be heated more evenly, so that the granular silicon can be dehydrogenated more thoroughly and the dehydrogenation process time can be shortened. That is, the setting position and setting number of the heating device 80 of the present application are not limited here, and the position and number of the heating device 80 can be set according to the needs.

[0081] See also Figure 1 In some embodiments, the dehydrogenation device 100 includes a heat preservation device 90 , and the heat preservation device 90 wraps the furnace cavity 11 .

[0082] In this way, the heat preservation device 90 can keep the ambient temperature inside the furnace chamber 11 stable, reduce heat loss, improve the dehydrogenation efficiency of the dehydrogenation device 100 and reduce the cost of dehydrogenation.

[0083] Specifically, Figure 1As shown, a heat preservation device 90 is provided on the top, bottom and side wall of the furnace chamber 11, so that the granular silicon inside the single crystal crucible 30 is heated more evenly, and the granular silicon is dehydrogenated more thoroughly. The heat preservation device 90 can be a heat preservation felt or a heat preservation board. For example, heat preservation felt is provided on the top, bottom and side wall of the furnace chamber 11, or heat preservation boards are provided on the top, bottom and side wall of the furnace chamber 11. For another example, heat preservation felt is provided on the top and side wall of the furnace chamber 11, and a heat preservation board is provided on the bottom of the furnace chamber 11, or heat preservation boards are provided on the top and side wall of the furnace chamber 11, and heat preservation felt is provided on the bottom of the furnace chamber 11. For another example, heat preservation felt is provided on the top of the furnace chamber 11, and a heat preservation board is provided on the bottom and side wall of the furnace chamber 11, or heat preservation boards are provided on the top of the furnace chamber 11, and heat preservation felt is provided on the bottom and side wall of the furnace chamber 11.

[0084] In one embodiment, the use process of the dehydrogenation device 100 can be as follows: place the granular silicon in the single crystal crucible 30, then transfer the single crystal crucible 30 to the crucible 50 and the crucible holder 40, and place it on the supporting plate 22. The single crystal crucible 30 is covered with a cover plate 60, and then the above device is placed in the dehydrogenation device 100, and argon is introduced at a rate of 25L / min-60L / min, and the furnace pressure is maintained at 100mba-200mba. Heat to 1100℃-1150℃ and keep warm for 6H-9H, and then keep warm at 1050℃-1100℃ for 1H-2H, then increase the argon to 60L / min-90L / min, and the furnace pressure is increased to 800mba-900mba. The silicon material is cooled to 150℃-250℃ and taken out of the furnace, and the dehydrogenation is completed. Preferably, 500 kg of granular silicon is placed in a 36-inch single crystal crucible 30, and then the single crystal crucible 30 is transferred to the crucible 50 and the crucible support 40, and placed on the supporting plate 22. The single crystal crucible 30 is covered with a cover plate 60, and then the above device is placed in a dehydrogenation device 100, and argon is introduced at a rate of 40 L / min. The furnace pressure is maintained at 100 mba, and heated to 1150°C for 7 hours, and then kept at 1100°C for 1 hour. The argon is increased to 60 L / min, the furnace pressure is increased to 850 mba, and the silicon material is cooled to 150°C and taken out of the furnace, and the dehydrogenation is completed.

[0085] The above embodiments only express several implementation methods of the utility model, and the descriptions are relatively specific and detailed, but they cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.

Claims

1. A dehydrogenation device, characterized in that: include: A furnace body, forming a furnace cavity; A carrier, the carrier being arranged in the furnace cavity; A single crystal crucible is selectively arranged in the furnace chamber, and the single crystal crucible has an arc-shaped crucible bottom and is arranged on the carrier.

2. The dehydrogenation device according to claim 1, characterized in that: The dehydrogenation device comprises a crucible support for supporting the arc-shaped crucible bottom, and the crucible support is against the carrier.

3. The dehydrogenation device according to claim 2, characterized in that: The dehydrogenation device includes a crucible clasp surrounding the single crystal crucible, and the crucible clasp abuts against the crucible support.

4. The dehydrogenation device according to claim 1, characterized in that: The top surface of the single crystal crucible has an opening, and the dehydrogenation device comprises a cover plate, which covers the opening of the single crystal crucible.

5. The dehydrogenation device according to claim 4, characterized in that: An exhaust channel is formed between the top surface of the single crystal crucible and the cover plate; and / or, the cover plate is formed with vent holes, and the vent holes penetrate through both sides of the cover plate in a thickness direction.

6. The dehydrogenation device according to claim 4, characterized in that: The cover plate is provided with a gas injection hole, and the dehydrogenation device includes a guide tube, which corresponds to the gas injection hole and is used to continuously introduce gas into the single crystal crucible through the gas injection hole.

7. The dehydrogenation device according to claim 6, characterized in that: A gap is formed between the guide tube and the hole wall of the gas injection hole.

8. The dehydrogenation device according to claim 4, characterized in that: The cover plate is made of graphite or carbon-carbon material.

9. The dehydrogenation device according to claim 2, characterized in that: The carrier comprises a base and a bearing plate detachably connected to the base, and the crucible support abuts against the bearing plate.

10. The dehydrogenation device according to claim 9, characterized in that: The supporting plate is a graphite plate.

11. The dehydrogenation device according to claim 1, characterized in that: The dehydrogenation device comprises a heating device, and the heating device is arranged above and / or on the outer side wall of the single crystal crucible.

12. The dehydrogenation device according to claim 1, characterized in that: The dehydrogenation device comprises a heat preservation device, and the heat preservation device wraps the furnace cavity.

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