Large-size public mask plate
By using a large-size common mask plate in the evaporation of large-size OLED common layer, and using the web connection technology of intile frame and intile etching unit, the problem of insufficient width of intile raw materials is solved, and effective evaporation and elimination of evaporation shadows of large-size OLED common layer is achieved.
Patent Information
- Application Number
- CN202420627901.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2025-03-07
- Estimated Expiration
- 2034-03-29
AI Technical Summary
The existing tile raw material width cannot meet the demand for evaporation of large-sized OLED common layer, resulting in the horizontal and vertical mask strips not on the same plane, and evaporation shadow problems occur.
A large-size common mask plate is used to form an int tiling frame by rolling the int tiling raw material, and N int tiling strips and N+1 int etching units are arranged inside it, forming a stable mask structure through a web connection.
Effective evaporation of the large-size OLED common layer is achieved, avoiding the problem that the horizontal and vertical mask strips are not on the same plane, and improving the uniformity and quality of evaporation.
Smart Images
Figure CN222574752U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of masks, and more specifically, to a large-size public mask. Background Art
[0002] The open mask is a key jig for evaporating the common layer of OLED. The Invar raw material used is obtained by calendering, so the width of the Invar raw material is restricted by the calendering equipment. The width of the Invar raw material currently available on the market can meet the G6H size. However, with the rise of large-size OLEDs, the width of the Invar raw material can no longer meet the production requirements of the open mask. The large-size OLED uses a single mask strip to stretch the horizontal and vertical grids, which has the problem that the horizontal and vertical mask strips are not in the same plane, which leads to a prominent evaporation shadow problem when the common layer is evaporated. Therefore, for the evaporation of the common layer of large-size OLEDs, the mask is an urgent problem to be solved. Utility Model Content
[0003] In view of the above problems, the utility model provides a large-size common mask plate, which can be suitable for evaporation of a common layer of a large-size OLED.
[0004] A large-size public mask, based on the width a, length b and thickness h0 of an Invar raw material formed by calendering an Invar raw material, wherein a is the maximum calendering width of a calendering device, comprises an Invar frame, wherein the Invar frame comprises an Invar frame top, an Invar frame left, an Invar frame bottom and an Invar frame right, the large-size public mask also comprises N Invar strips and N+1 Invar etching units, wherein the N Invar strips are arranged equidistantly in the Invar frame, the N+1 Invar etching units are arranged sequentially in the Invar frame, and each Invar etching unit comprises an Invar etching unit left, an Invar etching unit top, an Invar etching unit bottom, an Invar etching unit right and an Invar etching unit located at the Invar etching unit bottom. The Invar etching unit grid on the left side of the Invar etching unit, the top of the Invar etching unit, the bottom of the Invar etching unit, and the right side of the Invar etching unit, the upper end of each Invar bar is connected to the upper side of the Invar frame, and the lower end is connected to the lower side of the Invar frame. The upper side of each Invar etching unit is connected to the upper side of the Invar frame, and the lower side of each Invar etching unit is connected to the lower side of the Invar frame. Among the N+1 Invar etching units on the left side, the leftmost one is connected to the left side of the Invar frame, and the rest are connected to the adjacent Invar bars. Among the N+1 Invar etching units on the right side, the rightmost one is connected to the right side of the Invar frame, and the rest are connected to the adjacent Invar bars. The width of the Invar etching unit is a, the length is b, and N is a natural number.
[0005] Optionally, N=1-20.
[0006] Optionally, the large-size common mask has a width > 3a and a length > b.
[0007] Optionally, the connection is a tensioned network connection.
[0008] Optionally, the h0 is 100-200 μm.
[0009] Optionally, N=2.
[0010] Compared with the prior art, the beneficial effects of the utility model are:
[0011] The large-size common mask provided by the utility model can be suitable for evaporation of a common layer of a large-size OLED. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.
[0013] Figure 1 This is a schematic diagram of the structure of a large-size common mask in Embodiment 1 of the utility model;
[0014] Figure 2 This is a schematic diagram of the Invar raw material structure of the utility model;
[0015] Figure 3 This is a schematic diagram of the structure of the utility model Invar strip;
[0016] Figure 4 It is a schematic diagram of the frame structure of the utility model;
[0017] Figure 5 It is a schematic top view of the first Invar etching unit, the second Invar etching unit and the third Invar etching unit of the utility model;
[0018] Figure 6 It is a schematic diagram of the positional relationship between the Invar strip and the Invar etching unit of the utility model;
[0019] Figure 7 This is a schematic diagram of the net stretching process of the Invar etching unit of the utility model;
[0020] Description of the accompanying drawings: 1. First Invar raw material unit, 2. Second Invar raw material unit, 3. Third Invar raw material unit, 4. Invar frame, 5. First Invar etching unit, 6. Second Invar etching unit, 7. First Invar strip, 8. Third Invar etching unit, 9. Second Invar strip, 10. Top of Invar frame, 11. Left side of Invar frame, 12. Bottom side of Invar frame, 13. Right side of Invar frame, 14. Left side of first Invar etching unit, 15. Top of first Invar etching unit, 16. First Invar strip Below the etching unit, 17, to the right of the first Invar etching unit, 18, the grid of the first Invar etching unit, 19, to the left of the second Invar etching unit, 20, above the second Invar etching unit, 21, below the second Invar etching unit, 22, to the right of the second Invar etching unit, 23, the grid of the second Invar etching unit, 24, to the left of the third Invar etching unit, 25, above the third Invar etching unit, 26, below the third Invar etching unit, 27, to the right of the third Invar etching unit, 28, the grid of the third Invar etching unit. DETAILED DESCRIPTION
[0021] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, or it can be an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0022] In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present invention. In the description of the present invention, "multiple" means two or more, unless otherwise precisely and specifically specified.
[0023] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0025] The following specific embodiments are used to describe the technical solution of the utility model in detail. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.
[0026] In the following embodiments, when the raw material is calendered with Invar, the maximum calendering width of the calendering equipment is a, the cutting length is b, and the width, length, and thickness of the Invar raw material unit are a, b, and h0.
[0027] Example 1
[0028] Please refer to Figure 1 , Figure 1 A large-size common mask is provided for this embodiment.
[0029] A large-size public mask, comprising an Invar frame 4, a first Invar strip 7, a second Invar strip 9, a first Invar etching unit 5, a second Invar etching unit 6 and a third Invar etching unit 8, wherein the Invar frame 4 comprises an Invar frame top 10, an Invar frame left 11, an Invar frame bottom 12 and an Invar frame right 13, the first Invar etching unit 5 comprises a first Invar etching unit left 14, a first Invar etching unit top 15, a first Invar etching unit bottom 16 and a first Invar etching unit right 17, and a first Invar etching unit left 14, a first Invar etching unit top 15, a first Invar etching unit bottom 16 and a first Invar etching unit right 17. The first Invar etching unit grid 18 is within the unit right side 17, the second Invar etching unit 6 includes the second Invar etching unit left side 19, the second Invar etching unit top 20, the second Invar etching unit bottom 21, the second Invar etching unit right side 22 and the second Invar etching unit grid 23 located within the second Invar etching unit left side 19, the second Invar etching unit top 20, the second Invar etching unit bottom 21, and the second Invar etching unit right side 22, the third Invar etching unit 8 includes the third Invar etching unit left side 24, the third Invar etching unit top 25, the third Invar etching unit bottom 26, the third Invar etching unit The right side 27 and the third Invar etching unit grid 28 located in the left side 24 of the third Invar etching unit, the upper side 25 of the third Invar etching unit, the lower side 26 of the third Invar etching unit, and the right side 27 of the third Invar etching unit, the first Invar bar 7 and the second Invar bar 9 are parallel to each other, the upper end of the first Invar bar 7 is connected to the upper side 10 of the Invar frame, and the lower end is connected to the lower side 12 of the Invar frame, the upper end of the second Invar bar 9 is connected to the upper side 10 of the Invar frame, and the lower end is connected to the lower side 12 of the Invar frame, the left side 14 of the first Invar etching unit is connected to the left side 11 of the Invar frame, the upper side 15 of the first Invar etching unit is connected to the upper side 10 of the Invar frame, and the lower side 16 of the first Invar etching unit is connected to the The lower side 12 of the Invar frame is connected, the right side 17 of the first Invar etching unit is connected to the first Invar bar 7, the left side 19 of the second Invar etching unit is connected to the first Invar bar 7, the upper side 20 of the second Invar etching unit is connected to the upper side 10 of the Invar frame, the lower side 21 of the second Invar etching unit is connected to the lower side 12 of the Invar frame, the right side 22 of the second Invar etching unit is connected to the second Invar bar 9, the left side 24 of the third Invar etching unit is connected to the second Invar bar 9, the upper side 25 of the third Invar etching unit is connected to the upper side 10 of the Invar frame, the lower side 26 of the third Invar etching unit is connected to the lower side 12 of the Invar frame, and the right side 27 of the third Invar etching unit is connected to the right side 13 of the Invar frame.
[0030] In one or more specific implementations of this embodiment, the connection is a mesh connection.
[0031] In one or more specific implementations of this embodiment, h0 of the large-size common mask is 100-200 μm.
[0032] Figure 1The large-size common mask is prepared by the following method:
[0033] S0, Raw material preparation:
[0034] S01, take three cut Invar raw material units, namely the first Invar raw material unit 1, the second Invar raw material unit 2 and the third Invar raw material unit 3, as shown in Figure 2 , the sizes of the first Invar raw material unit 1, the second Invar raw material unit 2 and the third Invar raw material unit 3 are all Invar raw materials with the maximum width of the Invar raw materials running in the calendering equipment, that is, the width is a and the length is b; the first Invar raw material unit 1, the second Invar raw material unit 2 and the third Invar raw material unit 3 are longitudinally cut respectively;
[0035] S02, take two Invar bars, the first of which is the first Invar bar 7, and the other is the second Invar bar, such as Figure 3 ;
[0036] S03, take Invar frame 4, such as Figure 4 .
[0037] S1, mask exposure: respectively perform mask exposure on the first Invar raw material unit 1, the second Invar raw material unit 2 and the third Invar raw material unit 3, specifically, coating a photoresist film (dry process or wet process) on the first Invar raw material unit 1, exposing and developing; coating a photoresist film (dry process or wet process) on the second Invar raw material unit 2, exposing and developing; coating a photoresist film (dry process or wet process) on the third Invar raw material unit 3, exposing and developing.
[0038] S2, etching: etching the first Invar raw material unit 1, the second Invar raw material unit 2 and the third Invar raw material unit 3 after the mask exposure respectively to form Figure 5 The first Invar etching unit 5, the second Invar etching unit 6 and the third Invar raw material unit 3, Figure 5 In the structure, the first Invar etching unit 5, the second Invar etching unit 6 and the third Invar etching unit 8 are all formed into a square by the four sides of Invar, and the Invar transverse skeleton and the Invar longitudinal skeleton in the square intersect to form a grid structure.
[0039] S3, stretching the net: stretch two Invar strips onto the Invar frame 4, wherein one end of the Invar strip is stretched onto the horizontal edge of the Invar frame 4, and the other end is stretched onto the other horizontal edge of the Invar frame 4, and the two Invar strips are parallel to each other, and then stretch the first Invar etching unit 5 and the second Invar etching unit 6 onto the Invar frame 4, wherein a longitudinal side of the first Invar etching unit 5 is stretched onto a longitudinal edge of the Invar frame 4, and the other longitudinal side is stretched onto an Invar strip, and the two horizontal sides are stretched onto the two horizontal edges of the Invar frame 4 respectively, a longitudinal side of the second Invar etching unit 6 is stretched onto the other longitudinal edge of the Invar strip, and the other longitudinal side is stretched onto another Invar strip, and the two horizontal sides are stretched onto the two horizontal edges of the Invar frame 4 respectively, a longitudinal side of the third Invar etching unit 8 is stretched onto the other longitudinal edge of another Invar strip, and the other longitudinal side is stretched onto the other longitudinal edge of the Invar frame 4, and the two horizontal sides are stretched onto the two horizontal edges of the Invar frame 4 respectively, and finally a net is formed as follows Figure 1 The common mask shown in the figure has the following positional relationship with the Invar strips and Invar etching units after the mesh is stretched: Figure 6 , the schematic diagram of the Invar etching unit stretching process is as follows Figure 7 .
[0040] Since the common mask has three Invar etching units, the width of the common mask is >3a, which is suitable for large-size evaporation.
[0041] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the utility model, rather than to limit it. Although the utility model has been described in detail with reference to the aforementioned embodiments, ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the utility model.
Claims
1. A large-size common mask, based on the Invar raw material formed by rolling the Invar raw material with a width of a, a length of b, and a thickness of h0, wherein: a is the maximum calendering width of the calendering equipment, including an Invar frame, the Invar frame including the upper side of the Invar frame, the left side of the Invar frame, the lower side of the Invar frame and the right side of the Invar frame, characterized in that the large-size common mask also includes N Invar strips and N+1 Invar etching units, the N Invar strips are equidistantly arranged in the Invar frame, the N+1 Invar etching units are sequentially arranged in the Invar frame, and each Invar etching unit includes the left side of the Invar etching unit, the upper side of the Invar etching unit, the lower side of the Invar etching unit, the right side of the Invar etching unit, and the left side, the upper side, and the Invar etching unit The Invar etching unit grid at the bottom and on the right side of the Invar etching unit, the upper end of each Invar bar is connected to the upper side of the Invar frame, and the lower end is connected to the lower side of the Invar frame. The upper side of each Invar etching unit is connected to the upper side of the Invar frame, and the lower side of each Invar etching unit is connected to the lower side of the Invar frame. Among the N+1 Invar etching units on the left side, the leftmost one is connected to the left side of the Invar frame, and the rest are connected to the adjacent Invar bars. Among the N+1 Invar etching units on the right side, the rightmost one is connected to the right side of the Invar frame, and the rest are connected to the adjacent Invar bars. The width of the Invar etching unit is a, the length is b, and N is a natural number.
2. The large-size common mask according to claim 1, characterized in that: N＝1-20。 3. The large-size common mask according to claim 2, characterized in that: The large-size common mask has a width>3a and a length>b.
4. The large-size common mask according to claim 3, characterized in that: The connection is a stretched network connection.
5. The large-size common mask according to claim 1, characterized in that: The h0 is 100 to 200 μm.
6. The large-size common mask according to claim 1, characterized in that: N＝2。