Inverted packaging structure of power module
By adopting a flip-fitting power module flip-fitting package structure in the power module, the problem of low heat dissipation efficiency of aluminum wire bonding chips in the prior art is solved, and more efficient heat dissipation and reduced production costs are achieved.
Patent Information
- Application Number
- CN202420674648.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-03
- Publication Date
- 2025-03-11
- Estimated Expiration
- 2034-04-03
AI Technical Summary
In the existing power semiconductor packaging structure, the aluminum wire and the chip have a small contact area, resulting in low heat dissipation efficiency.
The power module flip-pack packaging structure is adopted. Some electrodes of the chip are flip-fitted and connected to the copper skin on the upper surface of the ceramic substrate, and the other part of the chip is flip-fitted and connected to the copper skin on the lower surface of the ceramic substrate, increasing the contact area between the chip and the ceramic substrate, thereby improving the heat dissipation efficiency.
Through flip-fit connection, the heat dissipation area of the chip is increased, the heat dissipation efficiency is improved, and the production cost is reduced, and the structure is simple.
Smart Images
Figure CN222600965U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor packaging, in particular to a flip-chip packaging structure of a power module. Background Art
[0002] The power semiconductor packaging structure usually includes a ceramic substrate and a chip mounted on the ceramic substrate. The chip and the copper foil of the substrate are bonded by aluminum wires. In this solution, the heat generated by the chip is concentrated at the emitter at the top. The contact area between the aluminum wire and the chip is small, and the heat dissipation efficiency is low.
[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Utility Model Content
[0004] In view of the deficiencies in the prior art, the embodiment of the utility model discloses a power module flip-chip packaging structure to solve the problem of low heat dissipation efficiency of aluminum wire bonding chips.
[0005] The technical solution adopted by the utility model is as follows:
[0006] The power module flip-chip packaging structure comprises: a lower ceramic substrate, the upper surface of which is covered with copper; an upper ceramic substrate, the lower surface of which is covered with copper; and a chip connected between the lower ceramic substrate and the upper ceramic substrate; wherein a part of the electrodes of the chip are flip-chip connected to the copper on the upper surface of the lower ceramic substrate, and another part of the electrodes of the chip are flip-chip connected to the copper on the lower surface of the upper ceramic substrate, and the lower ceramic substrate and the upper ceramic substrate are sealed.
[0007] A further technical solution is that the chip includes an IGBT chip having an emitter, a gate and a collector, wherein the emitter and the gate are flip-chip connected to the copper sheet on the upper surface of the lower ceramic substrate, and the collector is flip-chip connected to the copper sheet on the lower surface of the upper ceramic substrate.
[0008] A further technical solution is that the chip includes: a diode chip having an emitter and a collector, wherein the emitter is flip-chip connected to the copper sheet on the upper surface of the lower ceramic substrate, and the collector is flip-chip connected to the copper sheet on the lower surface of the upper ceramic substrate.
[0009] A further technical solution is that the upper surface of the lower ceramic substrate is connected to the lower surface of the chip via a thermally conductive insulating adhesive, and the lower surface of the upper ceramic substrate is connected to the upper surface of the chip via a thermally conductive insulating adhesive.
[0010] A further technical solution is that the power module flip-chip packaging structure includes: a plastic packaging material filled between the lower ceramic substrate and the upper ceramic substrate.
[0011] A further technical solution is that the power module flip-chip packaging structure includes: a pin, a first end of which is connected to the side surfaces of the lower ceramic substrate and the upper ceramic substrate, and a second end of which is connected to a PCB board.
[0012] The beneficial effects of the embodiments of the utility model are as follows:
[0013] (I) The power module flip-chip packaging structure of the utility model includes a lower ceramic substrate, an upper ceramic substrate and a chip. The chip is connected between the lower ceramic substrate and the upper ceramic substrate, a part of the chip electrodes are flip-chip connected to the copper sheet on the upper surface of the lower ceramic substrate, and another part of the chip electrodes are flip-chip connected to the copper sheet on the lower surface of the upper ceramic substrate. The contact area between the chip and the ceramic substrate is large, so the heat dissipation area is increased, and the heat dissipation efficiency is higher. At the same time, the high price of the copper base plate and the shell is omitted, and the structure is simple and the cost is low.
[0014] (ii) Furthermore, the emitter and gate of the IGBT chip are flip-chip connected to the copper foil on the upper surface of the lower ceramic substrate, the collector is flip-chip connected to the copper foil on the lower surface of the upper ceramic substrate, the emitter of the diode chip is flip-chip connected to the copper foil on the upper surface of the lower ceramic substrate, the collector is flip-chip connected to the copper foil on the lower surface of the upper ceramic substrate, the current direction in the IGBT chip is from top to bottom, and the current direction in the diode chip is from bottom to top, which facilitates the electrical connection between the IGBT chip and the diode chip. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 It is a structural schematic diagram of the lower ceramic substrate in the flip-chip packaging structure of the power module of the utility model.
[0016] Figure 2 It is a structural schematic diagram of the lower ceramic substrate and the chip in the flip-chip packaging structure of the power module of the utility model.
[0017] Figure 3 It is a structural schematic diagram of the flip-chip packaging structure of the power module of the utility model.
[0018] In the figure:
[0019] 1. Lower ceramic substrate; 2. IGBT chip; 3. Diode chip; 4. Upper ceramic substrate; 5. Copper foil; 6. Pins; 7. Plastic packaging material. DETAILED DESCRIPTION
[0020] The specific implementation of the utility model is described below in conjunction with the accompanying drawings.
[0021] In order to make the purpose, technical scheme and advantages of the utility model clearer, the device proposed in the utility model is further described in detail below in combination with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the utility model will be clearer. It should be noted that the accompanying drawings adopt a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the utility model. In order to make the purpose, features and advantages of the utility model more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structure, proportion, size, etc. illustrated by the accompanying drawings of this specification are only used to match the content disclosed in the specification, so that people familiar with this technology can understand and read, and are not used to limit the limiting conditions for the implementation of the utility model, so it has no technical substantive significance. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effect that the utility model can produce and the purpose that can be achieved, should still fall within the scope of the technical content disclosed by the utility model.
[0022] Example:
[0023] This embodiment discloses a flip-chip packaging structure for a power module.
[0024] Figure 1 It is a structural schematic diagram of the lower ceramic substrate in the flip-chip packaging structure of the power module of the utility model. Figure 2 It is a structural schematic diagram of the lower ceramic substrate and the chip in the flip-chip packaging structure of the power module of the utility model. Figure 3 FIG. 1 is a schematic diagram of the structure of the flip-chip packaging structure of the power module of the utility model. Figures 1 to 3 As shown, the power module flip-chip packaging structure includes a lower ceramic substrate 1, an upper ceramic substrate 4 and a chip.
[0025] The upper surface of the lower ceramic substrate 1 is covered with a copper sheet 5. The lower surface of the upper ceramic substrate 4 is covered with a copper sheet 5. Copper coating on the surface of a ceramic substrate is a prior art.
[0026] The chip is connected between the lower ceramic substrate 1 and the upper ceramic substrate 4. Exemplarily, the upper surface of the lower ceramic substrate 1 is connected to the lower surface of the chip through a thermally conductive insulating adhesive, and the lower surface of the upper ceramic substrate 4 is connected to the upper surface of the chip through a thermally conductive insulating adhesive.
[0027] A portion of the electrodes of the chip are flip-chip connected to the copper foil 5 on the upper surface of the lower ceramic substrate 1, and another portion of the electrodes of the chip are flip-chip connected to the copper foil 5 on the lower surface of the upper ceramic substrate 4. Exemplarily, the chip includes an IGBT chip 2 and a diode chip 3, the IGBT chip 2 has an emitter, a gate and a collector, the emitter and the gate are flip-chip connected to the copper foil 5 on the upper surface of the lower ceramic substrate 1, and the collector is flip-chip connected to the copper foil 5 on the lower surface of the upper ceramic substrate 4. The chip also includes a diode chip 3, the diode chip 3 has an emitter and a collector, the emitter is flip-chip connected to the copper foil 5 on the upper surface of the lower ceramic substrate 1, and the collector is flip-chip connected to the copper foil 5 on the lower surface of the upper ceramic substrate 4. The flip-chip connection can be a solder ball connection or a solder bump connection. The current direction in the IGBT chip 2 is from top to bottom, and the current direction in the diode chip 3 is from bottom to top, which facilitates the electrical connection between the IGBT chip 2 and the diode chip 3.
[0028] The lower ceramic substrate 1 is sealed and connected to the upper ceramic substrate 4. Exemplarily, the power module flip-chip packaging structure includes a molding compound 7, and the molding compound 7 is filled between the lower ceramic substrate 1 and the upper ceramic substrate 4. The molding compound 7 can be epoxy resin or silica gel.
[0029] Furthermore, the flip-chip packaging structure of the power module includes a pin 6, a first end of the pin 6 is connected to the side surfaces of the lower ceramic substrate 1 and the upper ceramic substrate 4, and a second end of the pin 6 is connected to the PCB board.
[0030] In this embodiment, the chip is flip-chip connected on both sides to the ceramic substrate, which increases the heat dissipation area and improves the heat dissipation efficiency. At the same time, the expensive copper base plate and the shell are omitted, and the structure is simple and the cost is low.
[0031] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0032] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the utility model patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model. Therefore, the protection scope of the utility model patent shall be based on the attached claims.
Claims
1. A power module flip-chip packaging structure, characterized in that: include: A lower ceramic substrate (1) having an upper surface covered with a copper sheet (5); An upper ceramic substrate (4) with a copper sheet (5) covering the lower surface; A chip connected between the lower ceramic substrate (1) and the upper ceramic substrate (4); Part of the electrodes of the chip are flip-chip connected to the copper sheet (5) on the upper surface of the lower ceramic substrate (1), and another part of the electrodes of the chip are flip-chip connected to the copper sheet (5) on the lower surface of the upper ceramic substrate (4), and the lower ceramic substrate (1) and the upper ceramic substrate (4) are sealed.
2. The power module flip-chip packaging structure according to claim 1, characterized in that: The chip comprises: The IGBT chip (2) comprises an emitter, a gate and a collector, wherein the emitter and the gate are flip-chip connected to the copper sheet (5) on the upper surface of the lower ceramic substrate (1), and the collector is flip-chip connected to the copper sheet (5) on the lower surface of the upper ceramic substrate (4).
3. The power module flip-chip packaging structure according to claim 2, characterized in that: The chip comprises: The diode chip (3) comprises an emitter and a collector, wherein the emitter is flip-chip connected to the copper sheet (5) on the upper surface of the lower ceramic substrate (1), and the collector is flip-chip connected to the copper sheet (5) on the lower surface of the upper ceramic substrate (4).
4. The power module flip-chip packaging structure according to claim 1, characterized in that: The upper surface of the lower ceramic substrate (1) is connected to the lower surface of the chip via a heat-conducting insulating adhesive, and the lower surface of the upper ceramic substrate (4) is connected to the upper surface of the chip via a heat-conducting insulating adhesive.
5. The power module flip-chip packaging structure according to claim 1, characterized in that: The power module flip-chip packaging structure comprises: A plastic packaging material (7) is filled between the lower ceramic substrate (1) and the upper ceramic substrate (4).
6. The power module flip-chip packaging structure according to claim 1, characterized in that: The power module flip-chip packaging structure comprises: A pin (6) has a first end connected to the side surfaces of the lower ceramic substrate (1) and the upper ceramic substrate (4), and a second end connected to a PCB board.