Tube socket for semiconductor packaging
Through the multiple stamping, combined with appropriate gap setting, the problems of low heat dissipation performance and solder overflow for existing semiconductor packaging tube seats are solved, and better heat dissipation performance and higher laser device performance are achieved.
Patent Information
- Application Number
- CN202420627356.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-29
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2034-03-29
AI Technical Summary
The existing tube bases for semiconductor packaging have low heat dissipation performance, mainly because the heat transfer resistance between the device body and the substrate is large, and the solder is prone to overflow during welding, which affects the planeness of the device body and the fitting degree of the laser chip.
By stamping multiple times, the vertical distance between the bottom of the sinker and the uppermost surface of the substrate is greater than 60% of the maximum thickness of the substrate, reducing heat transfer thermal resistance; at the same time, an appropriate gap is set in the sinker to avoid solder overflow and affect the planetity of the device body.
The heat dissipation performance of the tube base for semiconductor packaging is significantly improved, the problem of solder overflow is avoided, the planarity of the device body and the fit of the laser chip are improved, and the performance of semiconductor laser devices is improved.
Smart Images
Figure CN222637898U_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of semiconductor packaging, and in particular relates to a tube socket for semiconductor packaging. Background Art
[0002] In the semiconductor package socket of the existing semiconductor laser device, the device body (heat sink) and the substrate (metal socket) are connected by solder or the like. In order to improve the heat dissipation performance of the semiconductor package socket, it is necessary to make the lowest surface of the device body as close as possible to the lowest surface of the substrate so that the device body can transfer its own heat to the external heat dissipation part as quickly as possible to reduce the heat transfer resistance between the substrate and the device body, so as to achieve better heat dissipation performance. On the one hand, the conventional semiconductor package socket directly welds the device body on the upper surface of the substrate, so that the distance between the lowest surface of the substrate and the lowest surface of the device body is large, the heat transfer resistance is large, and the heat dissipation performance of the socket is low. On the other hand, if the size of the bottom of the sink on the substrate is set to be roughly the same as the size of the lowest surface of the device body, this will cause the substrate and the device body to overflow from the gap between the substrate and the device body when welding, and the solder has a high adsorption on the device body, and the solder will move upward along the side of the device body to reduce the flatness of the side of the device body, affecting the fit between the laser chip and the device body, generating a large air thermal resistance, and significantly reducing the heat dissipation performance of the socket. Summary of the invention
[0003] In order to solve the problems existing in the background technology, the present invention provides a tube socket for semiconductor packaging, which comprises: a device body and a substrate; a sink is arranged on the substrate; the lowermost surface of the device body is separated from the lowermost surface of the substrate by the bottom of the sink; the device body and the substrate are connected by solder; the vertical distance between the bottom of the sink and the uppermost surface of the substrate is greater than 60 percent of the maximum thickness of the substrate.
[0004] Preferably, the device body is a semi-cylinder; when observed from above, the arc surface of the device body and the two sharp corners of the arc surface are cut flat.
[0005] Preferably, the radial gap between the device body and the surrounding walls of the sinking platform is 0.1-0.5 mm.
[0006] Preferably, the sink is formed by multiple stamping operations.
[0007] Preferably, the matrix contains iron as a main component.
[0008] Preferably, the device body contains copper as a main component.
[0009] Preferably, the substrate is further provided with two through holes; a first lead and a second lead are fixedly disposed in the two through holes respectively.
[0010] Preferably, the first lead and the second lead are fixedly connected to the two through holes respectively through connecting parts.
[0011] Preferably, the connecting portion comprises: glass.
[0012] Preferably, when viewed from above, a positioning structure is provided on the periphery of the base.
[0013] The present invention has at least the following beneficial effects
[0014] The present invention obtains a sinker by multiple stamping processes, and the vertical distance between the bottom of the sinker and the uppermost surface of the substrate is set to be greater than 60 percent of the maximum thickness of the substrate, so as to greatly reduce the heat transfer resistance between the substrate and the device body, thereby improving the heat dissipation performance of the semiconductor packaging tube seat; at the same time, in the sinker, since the radial gap between the device body and the surrounding walls of the substrate sinker is 0.1-0.5 mm, in the sinker structure, the gap between the device body and the substrate in the horizontal direction increases step by step from small to large, which can avoid the problem of uneven side surfaces of the device body caused by high adsorption of solder to the device body, thereby improving the performance of the semiconductor laser device. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 A top view of a semiconductor package socket according to the present invention;
[0016] Figure 2 It is a cross-sectional schematic diagram of a semiconductor packaging stem of the present invention;
[0017] Figure 3 A schematic diagram of a stamping process using a large convex mold in an embodiment of the present invention;
[0018] Figure 4 A schematic diagram of a stamping process using a medium-sized convex mold in an embodiment of the present invention;
[0019] Figure 5 A schematic diagram of stamping using a small convex mold in an embodiment of the present invention;
[0020] The reference numerals are:
[0021] 1. Device body, 2. Sink, 3. Base, 31. Inclined groove, 32. Through hole, 33. Connecting part, 34. First lead, 35. Second lead, 36. Positioning structure, 41. Large convex mold, 21. First concave part, 42. Medium convex mold, 22. Second concave part, 43. Small convex mold, 23. Third concave part. DETAILED DESCRIPTION
[0022] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner, and the following embodiments and features in the embodiments can be combined with each other without conflict.
[0023] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on the present invention. In order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of actual products. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.
[0024] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "front", "rear", etc. indicate the orientation or position relationship, they are based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.
[0025] See also Figure 1 The present invention provides a semiconductor package tube socket, the tube socket comprising: a device body 1 and a base 3; a sink 2 is provided on the base 3; the lowermost surface of the device body 1 is separated from the lowermost surface of the base 3 by the bottom of the sink 2; the device body 1 and the base 3 are connected by solder; the vertical distance between the bottom of the sink 2 and the uppermost surface of the base 3 is greater than 60 percent of the maximum thickness of the base 3. Thus, a semiconductor package tube socket that is stable and has sufficiently excellent heat dissipation can be formed. The following is a detailed description.
[0026] Usually, as the material of the substrate 3, an iron-based metal material with high thermal conductivity that is easy to glass-tighten and energy storage weld is selected, and as the material of the device body 1, a copper-based metal material with high thermal conductivity that allows heat from the semiconductor laser element to dissipate easily is used. Therefore, the thermal conductivity of the substrate 3 is worse than that of the device body 1. The smaller the vertical distance between the bottom of the sinker 2 and the lowermost surface of the substrate 3, the smaller the distance between the device body 1 and the external heat dissipation part, the smaller the heat transfer resistance between the device body 1 and the external heat dissipation part, and the better the heat dissipation performance of the semiconductor package socket. In order to reduce the heat transfer resistance between the device body 1 and the external heat dissipation part, the existing preparation method is to set a sinker on the substrate, and weld the bottom of the sinker and the lowermost surface of the device body with solder, but there will be the following problems:
[0027] Problem 1: Most of the existing sinkers are made by lathe processing and stamping, and the cost of lathe processing is about ten times the cost of stamping. Therefore, in order to save costs and improve the competitiveness of enterprises, most of the existing sinkers are made by stamping. The stamping method has certain defects, that is, when the base 3 is stamped, the deeper the depth of the sinker, the worse the fluidity of the bottom of the sinker. After reaching a certain depth, the fluidity of the bottom of the sinker tends to 0, that is, the depth of the sinker will not change. Therefore, most of the existing stamping equipment can only make the vertical distance of the bottom of the sinker relative to the uppermost surface of the base 3 half of the maximum thickness of the base 3 when stamping the base 3 once. To reach more than 60%, multiple stampings are required to make the vertical distance of the bottom of the sinker relative to the uppermost surface of the base 3 more than 60% of the maximum thickness of the base 3.
[0028] Problem 2: When the substrate 3 and the device body 1 are welded, since the size of the bottom of the sink is set to be roughly the same as the size of the lowest surface of the device body 1, this will cause excess solder to overflow from the gap between the substrate and the device body during welding. The solder has a high adsorption capacity on the device body, and the solder will move upward along the side of the device body, reducing the flatness of the side of the device body, affecting the mounting accuracy of the laser chip and the device body, and further affecting the performance of the semiconductor laser device.
[0029] In order to solve the above-mentioned problems 1 and 2, the present invention forms a sinker structure by multiple stamping. The sinker structure formed by multiple stamping can ensure that the vertical distance between the bottom of the sinker 2 and the uppermost surface of the substrate 3 is greater than 60% of the maximum thickness of the substrate 3, so that the heat transfer resistance between the device body 1 and the substrate 3 is smaller, thereby achieving better heat dissipation performance of the semiconductor packaging socket. At the same time, in the sinker, since the radial gap between the device body 1 and the surrounding walls of the sinker (that is, the distance between the device body 1 and the substrate 3 in the horizontal direction is 0.1-0.5mm) is 0.1-0.5mm, it is avoided that the solder moves upward during welding of the device body and the substrate to reduce the flatness of the side of the device body, affect the fit between the laser chip and the device body, generate a large air thermal resistance, and significantly reduce the heat dissipation performance of the socket.
[0030] Preferably, the device body 1 is a semi-cylinder; when observed from above, the arc surface of the device body 1 and the two sharp corners of the arc surface are flattened. In this embodiment, the positioning accuracy of the heat sink can be improved by using the device body 1 after flattening. Specifically, the device body 1 is made semi-cylindrical, which can increase the contact area between the device body 1 and the substrate 3 and improve the heat dissipation efficiency. When welding the device body 1 and the substrate 3, it is necessary to fix the device body 1 and the substrate 3 by a fixing fixture, and the semi-cylindrical device body 1 is prone to offset errors during positioning, affecting the positioning accuracy. By using the fixture of the device body 1 after flattening, it can be processed into a square through hole, which improves the positioning stability and positioning accuracy of the device body 1.
[0031] Preferably, the radial gap between the device body 1 and the surrounding walls of the sink is 0.1-0.5 mm.
[0032] Preferably, the sink 2 is formed by multiple stamping operations.
[0033] In order to form the sink 2 on the base 3, a stamping process can be used. Taking three stampings as an example, the process of stamping to form the sink 2 is described below in combination with a specific implementation method. In this embodiment, three types of convex molds, large, medium, and small, are used to stamp the substrate in sequence. First, a large convex mold 41 is used to make the first concave area 21 on the substrate;
[0034] Next, a medium-sized convex mold 42 is used to form a second concave area 22 on the bottom of the first concave area 21;
[0035] Finally, a small convex mold 43 is used to form a third concave area 23 on the bottom of the second concave portion 22;
[0036] After the above three stampings, a sink 2 is formed on the substrate. The three stampings can ensure that the vertical distance between the bottom of the third recessed area 23 and the lowermost surface of the substrate 3 reaches the set threshold, and the flatness of the bottom of the third recessed area 23 can be ensured at the same time; this is because the vertical distance between the bottom of the first recessed area 21 and the lowermost surface of the substrate 3 can be obtained after the first stamping, and then the second stamping is performed to further obtain the vertical distance between the bottom of the second recessed area 22 and the lowermost surface of the substrate 3, and finally the three stampings are performed to ensure the flatness and thickness of the bottom of the third recessed area 23, thereby improving the heat dissipation performance of the semiconductor laser device (the higher the flatness of the bottom of the third recessed area 23, the better the contact effect between the substrate 3 and the device body 1, the better the heat dissipation performance, and the smaller the vertical distance between the bottom of the third recessed area 23 and the lowermost surface of the substrate 3, the better the heat dissipation performance.
[0037] Preferably, the base body 3 contains iron as a main component; and the device body 1 contains copper as a main component.
[0038] Preferably, the base body 3 is further provided with two through holes 32 ; a first lead 34 and a second lead 35 are fixedly disposed in the two through holes 32 , respectively.
[0039] Preferably, the first lead and the second lead are fixedly connected to the two through holes respectively through the connecting parts 33 .
[0040] Preferably, the connecting portion 33 comprises insulating materials such as glass.
[0041] Preferably, when viewed from above, a positioning structure 36 is provided on the periphery of the base 3 , and the positioning structure facilitates the fixing of the base 3 by a fixing fixture.
[0042] In this embodiment, the substrate 3 is cylindrical, and the diameter of the substrate 3 is not particularly limited, and can be appropriately determined according to the purpose, such as φ5.6mm, φ9.0mm, etc. The thickness of the substrate 3 is not particularly limited, and can be appropriately determined according to the purpose, such as about 0.5 to 3mm. The substrate 3 can be formed of a metal material such as iron, stainless steel, etc., or a metal material (such as a so-called composite material) stacked with multiple metal layers (copper layer, iron layer, etc.). A plating layer can be applied to the surface of the substrate 3.
[0043] In this embodiment, the first lead 34 and the second lead 35 are inserted into two through holes 32 that penetrate the substrate 3 in the thickness direction in such a manner that the length direction thereof faces the thickness direction. The first lead 34 and the second lead 35 are sealed by, for example, an insulating material (connection portion 33) such as a glass material at a high temperature of 950° C., so that the first lead 34 and the second lead 35 are fixedly connected to the substrate 3. Parts of the first lead 34 and the second lead 35 protrude from the upper surface of the substrate 3 and the lower surface of the substrate 3. In the first lead 34 and the second lead 35, the protrusion amount from the lower surface of the substrate 3 is, for example, about 6 to 7 mm. The first lead 34 and the second lead 35 are formed of, for example, a metal such as a 50% iron-nickel alloy or a kovar alloy. The first lead 34 and the second lead 35 are electrically connected to, for example, a semiconductor element mounted on a semiconductor package stem. It should be noted that the number of leads can be increased according to the specifications of the mounted semiconductor element.
[0044] Preferably, as another embodiment of the present invention, the base 3 is further provided with an inclined groove 31, which can be used to install a photodiode or prevent light reflection from affecting the performance of the laser chip. The left side of the inclined groove 31 and the rightmost side of the sink 2 are on the same horizontal plane, as shown in the attached figure. Figure 2 shown.
[0045] Preferably, as another embodiment of the present invention, Figure 1 For reference, a positioning structure 36 is also provided on the periphery of the base 3, and the positioning structure 36 facilitates the fixation of the base 3 by the fixing clamp. The positioning structure 36 is not specifically limited and can be appropriately determined according to the purpose, such as a V-shaped positioning structure 36, a U-shaped positioning structure 36, etc.
[0046] A method of making and using an embodiment of the present invention comprises selecting a substrate with iron as the main component, making a sink on the substrate by multiple stamping to form a substrate 3, setting an inclined groove 31, a through hole 32, and a positioning structure 36 on the substrate 3, and making it by stamping, placing solder in the sink 2 on the substrate 3, placing the device body in the sink 2, and welding the substrate 3 and the device body 1. During welding, the excess solder is squeezed and flows into the gap between the substrate 3 and the device body 1 in the horizontal direction. After welding, the first lead 34 and the second lead 35 are sealed at a high temperature of 950° C. through an insulating material (connecting portion 33) such as glass material, so that the first lead 34 and the second lead 35 are fixedly connected to the substrate 3; the first lead 34 and the second lead 35 can also be sealed before welding the device body 1; the production of the semiconductor package tube seat is completed, by mounting the laser chip on the side of the device body 1, and the side of the device body 1 is facing the position direction of the inclined groove (such as the attached Figure 1The photodiode is mounted in the oblique groove 31, and is electrically connected to the laser chip and the photodiode through the first lead and the second lead, respectively, to obtain a semiconductor laser device with excellent performance.
[0047] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution, which should be included in the scope of the claims of the present invention.
Claims
1. A semiconductor package socket, characterized in that: The tube seat comprises: a device body (1) and a base (3); a sink (2) is arranged on the base (3); the lowermost surface of the device body (1) is separated from the lowermost surface of the base (3) by the bottom of the sink (2); the device body (1) and the base (3) are connected by solder; the vertical distance between the bottom of the sink (2) and the uppermost surface of the base (3) is greater than 60 percent of the maximum thickness of the base (3).
2. A semiconductor package socket according to claim 1, characterized in that: The device body (1) is a semi-cylinder; when viewed from above, the arc surface of the device body (1) and the two sharp corners of the arc surface are flattened.
3. A semiconductor package socket according to claim 2, characterized in that: The clearance in the radial direction between the device body (1) and the surrounding walls of the sinking platform (2) is 0.1 to 0.5 mm.
4. A semiconductor package socket according to claim 2, characterized in that: The sink (2) is formed by multiple punching processes.
5. The semiconductor package socket according to claim 2, characterized in that: The matrix (3) contains iron as a main component.
6. The semiconductor package socket according to claim 1, characterized in that: The device body (1) contains copper as a main component.
7. The semiconductor package socket according to claim 1, characterized in that: The base body (3) is also provided with two through holes (32); a first lead wire (34) and a second lead wire (35) are respectively fixedly arranged in the two through holes (32).
8. A semiconductor package socket according to claim 7, characterized in that: The first lead (34) and the second lead (35) are fixedly connected to the two through holes (32) respectively via connecting parts (33).
9. A semiconductor package socket according to claim 8, characterized in that: The connecting portion (33) comprises glass.
10. The semiconductor package socket according to claim 1, characterized in that: When viewed from above, a positioning structure (36) is provided on the periphery of the base body (3).