Die bonding condition testing device

Abstract

The utility model discloses a die bonding condition testing device. The die bonding condition testing device comprises a force sensor; the test carrying table is arranged on the force sensor, the test carrying table is configured to place an adhesive, and the adhesive is located on the side, away from the force sensor, of the test carrying table; the bearing mechanism is configured to bear a wafer film, the wafer film comprises a die bonding film and a wafer, the wafer is located on the side, close to the test carrying table, of the die bonding film, and when the wafer is located on the die bonding film and the die bonding film is in a flattened state, the wafer and the adhesive are arranged at an interval; the probe is positioned on one side, far away from the test carrying table, of the wafer film; the adhesive is a soldering flux or an auxiliary adhesive; and the die bonding condition testing device is used for testing the bonding strength between the wafer and the soldering flux and testing the bonding strength between the wafer and the die bonding film after dispergation.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a die bonding condition testing device. Background Art

[0002] In the packaging process of semiconductor products such as integrated circuits (ICs) or light emitting diodes (LEDs), die bonding is an extremely important step.

[0003] In the related art, the wafers for manufacturing semiconductor products are collectively pasted on the solid crystal film to form a wafer film. In the solid crystal process, firstly, a dispensing mechanism (also called a dispensing module) or a printer dispenses or applies flux on the solid crystal station of the substrate, and then a solid crystal mechanism (also called a solid crystal head) presses the wafer in the debonded wafer film down onto the substrate, and the wafer is bonded to the flux, and the wafer is separated from the debonded solid crystal film under the bonding effect of the flux, and then transferred to the substrate with the flux applied.

[0004] Needle puncture die bonding refers to a process in which a probe that vibrates up and down is used to press the die on the wafer, so that the die is separated from the die bonding film after debonding and placed on the corresponding fixed position on the substrate. However, this die bonding process often has defects such as missing substrates, resulting in a high die bonding defect rate and high production costs.

[0005] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Utility Model Content

[0006] The present disclosure aims to at least to some extent solve the technical problems of high defective rate of die bonding and high production cost caused by defective substrates in the die bonding process. To this end, the present disclosure provides a device for testing die bonding conditions.

[0007] The embodiment of the present disclosure provides a device for testing a solid crystal condition, the device comprising: a force sensor; a test platform, the test platform being arranged on the force sensor, the test platform being configured to place an adhesive, the adhesive being located on a side of the test platform away from the force sensor; a bearing mechanism, the bearing mechanism being configured to bear a wafer film, the wafer film comprising a solid crystal film and a chip, the chip being located on a side of the solid crystal film close to the test platform, when the chip is located on the solid crystal film and the solid crystal film is in a flattened state, the chip is spaced apart from the adhesive; and a probe, the The probe is located on a side of the wafer film away from the test carrier; the adhesive is a flux or an auxiliary adhesive; when the adhesive is a flux, and the bonding strength between the wafer and the flux is less than the bonding strength between the wafer and the solid crystal film, the solid crystal condition testing device is used to test the bonding strength between the wafer and the flux; when the adhesive is an auxiliary adhesive, and the bonding strength between the wafer and the auxiliary adhesive is greater than the bonding strength between the wafer and the solid crystal film after debonding, the solid crystal condition testing device is used to test the bonding strength between the wafer and the solid crystal film after debonding.

[0008] In some embodiments, the die bonding condition testing device further includes a shock absorbing mechanism, and the force sensor is disposed on the shock absorbing mechanism.

[0009] In some embodiments, the shock absorbing mechanism is an air-floating shock absorber.

[0010] In some embodiments, the supporting mechanism is configured to support a wafer stage, the wafer stage is located on a side of the test stage away from the force sensor, and the wafer stage is used to support the wafer film.

[0011] In some embodiments, the die-bonding condition testing device further includes an optical detection mechanism, and the optical detection mechanism is configured to perform positioning detection on the wafer.

[0012] In some embodiments, the die bonding condition testing device further includes: a housing, wherein the housing at least covers the force sensor and the wafer stage.

[0013] In some embodiments, the die-bonding condition testing device further includes: a first moving mechanism, wherein the first moving mechanism is configured to fixedly support the force sensor, or the first moving mechanism is configured to adjust the horizontal height of the force sensor.

[0014] In some embodiments, the supporting mechanism is configured to fixedly support the wafer stage, or the supporting mechanism is configured to adjust the horizontal height and / or horizontal position of the wafer stage.

[0015] In some embodiments, the die-bonding condition testing device further includes a needle-puncture die-bonding mechanism, and the needle-puncture die-bonding mechanism includes the probe.

[0016] In some embodiments, the bonding condition testing device further includes: a third moving mechanism, wherein the third moving mechanism is configured to fixedly support the needle puncture bonding mechanism, or the third moving mechanism is configured to adjust the horizontal height and horizontal position of the needle puncture bonding mechanism.

[0017] The disclosed embodiment also proposes a testing method for the above-mentioned solid crystal condition testing device, the testing method comprising: placing adhesive; placing a wafer film on the machine; and performing a solid crystal operation to obtain a test result of a force sensor; the adhesive is a flux or an auxiliary adhesive; when the adhesive is a flux, and the bonding strength between the wafer and the flux is less than the bonding strength between the wafer and the solid crystal film, the bonding strength between the wafer and the flux is obtained according to the test result; when the adhesive is an auxiliary adhesive, and the bonding strength between the wafer and the auxiliary adhesive is greater than the bonding strength between the wafer and the solid crystal film after debonding, the bonding strength between the wafer and the solid crystal film after debonding is obtained according to the test result.

[0018] The embodiments of the present disclosure have at least the following beneficial effects:

[0019] In the above-mentioned solid crystal condition testing device, when the flux is placed on the test carrier, the chip in the wafer film and the solid crystal film are not debonded at the same time, and the chip and the solid crystal film maintain a large bonding strength that is greater than the bonding strength between the chip and the flux. The process of acupuncture solid crystal is simulated by the probe, the supporting mechanism and the test carrier. When the probe is pressed down, the chip is pressed onto the flux on the test carrier. When the probe is lifted, the chip is lifted upward under the action of the solid crystal film. After the chip is bonded to the flux, it is separated from the flux under the action of the solid crystal film, so that the chip and the flux can be obtained. Bonding strength: when the auxiliary adhesive is placed on the test carrier, the chip in the wafer film and the solid crystal film are debonded at the same time, ensuring that the bonding strength between the chip and the auxiliary adhesive is greater than the bonding strength between the chip and the solid crystal film after debonding. The process of pin-piercing solid crystal is simulated by the probe, the bearing mechanism and the test carrier. When the probe is pressed down, the chip is pressed onto the flux on the test carrier. When the probe is lifted, the chip is bonded to the auxiliary adhesive. When the solid crystal film after debonding is lifted up, it is separated from the chip and left on the auxiliary adhesive, thereby obtaining the bonding strength between the chip and the solid crystal film after debonding. The above-mentioned solid crystal condition testing device can control the quality of the wafer film and / or flux after debonding by testing the bonding strength between the chip and the flux and the bonding strength between the chip and the solid crystal film after debonding, thereby avoiding the defective substrate parts caused by the unstable bonding strength of the wafer film and / or flux after debonding during the pin-piercing solid crystal process, and can improve the yield of pin-piercing fixation to a certain extent and reduce production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 A schematic diagram of the structure of a device for testing die bonding conditions in an embodiment of the present disclosure is shown;

[0022] Figure 2 A schematic diagram of the three-dimensional structure of a die bonding condition testing device in an embodiment of the present disclosure is shown;

[0023] Figure 3 Shows Figure 2 A top view of the wafer stage;

[0024] Figure 4 Shows Figure 2 The state diagram of the middle wafer stage when carrying the wafer film;

[0025] Figure 5 Shows Figure 4 A cross-sectional view of the wafer stage;

[0026] Figure 6 A schematic diagram showing a test process of the die bonding condition test device in an embodiment of the present disclosure for testing the bonding strength between a wafer and a die bonding film after debonding is shown;

[0027] Figure 7 Shows Figure 6 Test result curve diagram of the medium die bonding condition test device;

[0028] Figure 8 A schematic diagram of a test process of using a die bonding condition test device in an embodiment of the present disclosure to test the bonding strength between a wafer and a soldering flux is shown.

[0029] Reference numerals:

[0030] 100, force sensor; 110, base; 120, sensor instrument; 130, control center; 200, test platform; 300, shock absorption mechanism; 400, wafer platform; 410, inner wafer ring; 420, outer wafer ring; 500, optical detection mechanism; 600, shell; 700, probe; 800, third moving mechanism; 810, first moving component; 820, second moving component; 830, third moving component; 1000, solid crystal film; 2000, wafer; 3000, auxiliary adhesive; 4000, soldering flux; H1, first distance; H2, second distance; D1, first horizontal direction; D2, second horizontal direction; D1, vertical direction. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present disclosure.

[0032] In addition, the present disclosure may repeat reference numbers and / or reference letters in different examples, and such repetition is for the purpose of simplicity and clarity, and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present disclosure provides various specific examples of processes and materials, but those of ordinary skill in the art may recognize the application of other processes and / or the use of other materials.

[0033] The present disclosure is described below with reference to specific embodiments and in conjunction with the accompanying drawings:

[0034] In the packaging process of semiconductor chips such as light emitting diodes (LEDs), die bonding is an extremely important step.

[0035] In the related art, the wafer 2000 is collectively pasted on the adhesive tape of the die-bonding film 1000 to form a wafer film, and the wafer 2000 can be used to make a semiconductor chip or a light-emitting diode (LED). Before the die-bonding, ultraviolet light irradiation, heating, freezing and other measures can be used to reduce the adhesive force of the die-bonding film 1000, that is, the die-bonding film 1000 is subjected to a debonding treatment, and the adhesive strength between the die-bonding film 1000 and the wafer 2000 is reduced after the debonding. In the crystal bonding process, firstly, a dispensing mechanism (also called a dispensing module) or a printer dispenses or applies the flux 4000 on the crystal bonding station of the substrate, and then a crystal bonding mechanism (also called a crystal bonding head) presses the chip 2000 in the wafer film after debonding onto the substrate, so that the chip 2000 is bonded with the flux 4000. Under the bonding effect of the flux 4000, the chip 2000 is separated from the crystal bonding film 1000 after debonding, and then transferred to the substrate on which the flux 4000 has been dispensed.

[0036] Needle puncture die bonding refers to a process in which a probe that vibrates up and down is used to press the chip 2000 on the wafer, so that the chip 2000 is separated from the die bonding film 1000 after debonding and is placed on a corresponding fixed station on the substrate. However, this die bonding process often has defects such as missing substrate parts, resulting in a high die bonding defect rate and high production costs.

[0037] The present disclosure has found through research that the defective substrate parts in the needle-piercing die-bonding process have a low correlation with the die-bonding mechanism, but a greater correlation with the die-bonding film 1000 and / or the soldering flux 4000 . This is because both the solid crystal film 1000 and the flux 4000 are greatly affected by the environment. When the temperature is too high, the adhesion of the flux 4000 decreases and the adhesion of the solid crystal film 1000 increases; when the humidity increases, a layer of water vapor forms on the surface of the flux 4000, which reduces the adhesion of the flux 4000; the adhesion of the solid crystal film 1000 often increases due to long storage time; the adhesion of the solid crystal film 1000 and the flux 4000 changes due to various reasons, resulting in uncontrollable adhesion strength between the solid crystal film 1000 and the chip 2000, and between the flux 4000 and the chip 2000. As a result, in the solid crystal process, when the adhesion strength between the solid crystal film 1000 and the chip 2000 after partial debonding is greater than the adhesion strength between the flux 4000 and the chip 2000, the chip 2000 cannot be transferred to the substrate, which in turn causes the phenomenon of missing parts in the solid crystal process. Moreover, in the die bonding process, when the chip 2000 at the missing part of the substrate is pressed down until it contacts the flux 4000, part of the flux 4000 will be taken away. The missing flux 4000 cannot be repaired. If there are a large number of missing parts on the substrate after die bonding, it is impossible to carry out targeted repairs, and the transferred chip 2000 can only be wiped off, resulting in the failure of the die bonding process, which seriously affects the cost of the die bonding process. In addition, when analyzing the missing parts of the die bonding process, it is impossible to carry out data-based experimental analysis due to the lack of relevant testing instruments; at the same time, since the bonding force of the die bonding film 1000 and the flux 4000 after debonding changes with various reasons, it is impossible to accurately and effectively analyze which link has problems that lead to the missing parts of the substrate, and therefore it is impossible to formulate effective improvement measures.

[0038] The present disclosure provides a device for testing die bonding conditions. Figures 1 to 8 As shown, the solid crystal condition testing device includes a force sensor 100, a test platform 200, a supporting mechanism and a probe 700. The test platform 200 is set on the force sensor 100, and the test platform 200 is configured to place an adhesive, and the adhesive is located on the side of the test platform 200 away from the force sensor 100; the supporting mechanism is configured to support a wafer film, and the wafer film includes a solid crystal film 1000 and a chip 2000, and the chip 2000 is located on the side of the solid crystal film 1000 close to the test platform 200. When the chip 2000 is located on the solid crystal film 1000 and the solid crystal film 1000 is in a flattened state, the chip 200 is spaced apart from the adhesive; the probe 700 is located on the side of the wafer film away from the test platform 200.

[0039] The die bonding condition testing device proposed in the embodiment of the present disclosure is as follows: Figures 1 to 8As shown, the process of needle puncture crystal bonding can be simulated. The probe 700 is pressed down to press the wafer 2000 onto the adhesive on the test carrier 200. When the probe 700 is lifted, the crystal bonding film 1000 is lifted upward to apply an upward force to the wafer 2000. Based on the relative strength of the bonding between the wafer 2000 and the crystal bonding film 1000 and the bonding between the wafer 2000 and the adhesive, the wafer 2000 and the crystal bonding film 1000 are separated or the wafer 2000 and the adhesive are separated. The force sensor 100 measures the pulling force when the wafer 2000 and the crystal bonding film 1000 are separated or the wafer 2000 and the adhesive are separated, that is, the bonding strength between the wafer 2000 and the crystal bonding film 1000 or the bonding strength between the wafer 2000 and the adhesive is obtained. Through the crystal bonding condition testing device, at least the wafer film can be quality controlled, so that the substrate missing parts can be avoided to a certain extent during the needle puncture crystal bonding process, thereby improving the yield of needle puncture fixation and reducing production costs.

[0040] In some embodiments of the present disclosure, the adhesive is a flux or an auxiliary adhesive. When the adhesive is a flux and the bonding strength between the chip 2000 and the flux is less than the bonding strength between the chip 2000 and the solid crystal film 1000, the solid crystal condition testing device is used to test the bonding strength between the chip 1000 and the flux; when the adhesive is an auxiliary adhesive and the bonding strength between the chip 2000 and the auxiliary adhesive is greater than the bonding strength between the chip 2000 and the solid crystal film 1000 after debonding, the solid crystal condition testing device is used to test the bonding strength between the chip 2000 and the solid crystal film 1000 after debonding.

[0041] In some embodiments of the present disclosure, Figure 8 As shown, when the soldering flux 4000 is placed on the test carrier 200, since the bonding strength between the wafer 2000 and the soldering flux is less than the bonding strength between the wafer 2000 and the solid crystal film 1000, and the wafer 2000 and the solid crystal film 1000 in the wafer film are not debonded, it is ensured that the bonding strength between the wafer 2000 and the solid crystal film 1000 is maintained at a relatively large level, and the bonding strength between the wafer 2000 and the solid crystal film 1000 is greater than the bonding strength between the wafer 2000 and the soldering flux 40 00, the process of needle puncture bonding is simulated by a bonding condition testing device, the chip 2000 is pressed onto the flux 4000 on the test carrier 200, and when the probe 700 is lifted, the chip 2000 is lifted upward under the action of the bonding film 1000, and the chip 2000 is bonded to the flux 4000 and then separated from the flux 4000 under the action of the bonding film 1000, so that the bonding strength between the chip 2000 and the flux 4000 can be obtained.

[0042] In some embodiments of the present disclosure, Figure 6As shown, when the auxiliary adhesive 3000 is placed on the test carrier 200, the chip 2000 in the wafer film is debonded from the solid crystal film 1000 to ensure that the bonding strength between the chip 2000 and the auxiliary adhesive 3000 is greater than the bonding strength between the chip 2000 and the solid crystal film 1000 after debonding. By simulating the process of needle puncture solid crystal, the chip 2000 is pressed onto the auxiliary adhesive 3000 on the test carrier 200. When the probe 700 is lifted, the chip 2000 is bonded to the auxiliary adhesive 3000. When the solid crystal film 1000 is lifted upward after debonding, it is separated from the chip 2000 and leaves the chip 2000 on the auxiliary adhesive 3000, so that the bonding strength between the chip 2000 and the solid crystal film 1000 after debonding can be obtained.

[0043] The device for testing the bonding conditions of the disclosed embodiment can control the quality of the wafer film and / or the flux 4000 by testing the bonding strength between the chip 2000 and the flux 4000, and the bonding strength between the chip 2000 and the bonding film 1000 after debonding. This can avoid substrate missing parts defects during the needle puncture bonding process to a certain extent, thereby improving the yield of the needle puncture bonding and reducing production costs.

[0044] The crystal bonding condition testing device proposed in the embodiment of the present disclosure simulates the crystal bonding conditions through the crystal bonding condition testing device, and records the force change curve of the test platform during the needle puncture crystal bonding process through the force sensor 100. Based on the force change curve of the test platform tested by the force sensor 100, it can be analyzed whether there is any abnormality in the needle puncture crystal bonding process.

[0045] The die bonding condition testing device proposed in the embodiment of the present disclosure is as follows: Figures 1 to 8 As shown, by performing quality control on the solid crystal film 1000 and / or the flux 4000, it is possible to further control whether the wafer film and / or the flux 4000 meet the production standards, ensure that the bonding strength between the solid crystal film 1000 and the chip 2000 after debonding is within a reasonable process window range, and to a certain extent prevent the problem of missing substrates caused by the chip 2000 being unable to be transferred to the substrate due to excessive bonding force of the solid crystal film 1000 after debonding, thereby improving the overall yield of the solid crystal process; at the same time, it is also possible to reduce the amount of scrapped unqualified products in the solid crystal process, reduce the consumption of production materials, effectively reduce the material cost and personnel cost of the solid crystal process, and then reduce the cost of single-chip semiconductor chip products, broaden the product market, and enhance product competitiveness.

[0046] The die bonding condition testing device proposed in the embodiment of the present disclosure has a simple structure, low cost, less consumables, is easy to control and operate, and can simulate various die bonding conditions in the die bonding process and perform corresponding tests, thus filling the gap in measuring missing parts of substrates in the die bonding process.

[0047] , bonding strength refers to the stress required to cause the interface between the adhesive and the adherend in the adhesive part or its vicinity to be destroyed under the action of external force. In the embodiment of the present disclosure, when testing the bonding strength between the chip 2000 and the flux, the adhesive part refers to the structure formed by the bonding of the chip 2000 and the flux, the adhesive refers to the flux, and the adherend refers to the chip 2000; when testing the bonding strength between the chip 2000 and the solid crystal film 1000, the adhesive part refers to the structure formed by the bonding of the chip 2000 and the solid crystal film 1000, the adhesive refers to the solid crystal film, and the adherend refers to the chip 2000. Since the bonding force cannot be measured in the form of destruction, the indicator for evaluating the mechanical properties of the bonding system is usually the bonding strength rather than the bonding force.

[0048] The disclosed embodiment can reflect the bonding force between the chip 2000 and the flux 4000, and the bonding force between the chip 2000 and the die-bonding film 1000 after debonding by testing the bonding strength between the chip 2000 and the flux 4000, and the bonding strength between the chip 2000 and the die-bonding film 1000 after debonding.

[0049] In some embodiments of the present disclosure, a wafer refers to a silicon wafer used to make semiconductor products, and its raw material is silicon. After high-purity polycrystalline silicon is dissolved, silicon crystal seeds are added, and then slowly pulled out to form a cylindrical single-crystal silicon rod. The single-crystal silicon rod is ground, polished, and sliced ​​to form a silicon wafer, that is, a wafer. The wafer also needs to be further cut into chips 2000. When the wafer is cut into chips 2000, the wafer is first bonded to the solid crystal film 1000, and then the wafer on the solid crystal film 1000 is cut into chips 2000, forming a wafer film structure in which the chip 2000 is adhered to the solid crystal film 1000. The solid crystal process is the process of transferring the chip 2000 on the wafer film from the solid crystal film 1000 to the substrate.

[0050] In some embodiments of the present disclosure, the solid crystal film 1000 is used to be attached to the wafer, and its function is that after the wafer is cut into chips 2000, the chips 2000 are still attached to the solid crystal film 1000, and will not be arranged randomly due to cutting. Optionally, the solid crystal film 1000 may include a base film layer and a glue layer coated on the base film layer, and the glue layer can be debonded under ultraviolet light conditions, or can be debonded under heating conditions, or can be debonded under freezing conditions. During the cutting, transportation and storage of the wafer, the glue layer maintains a high adhesion force to ensure that the wafer / chip 2000 is attached to the solid crystal film 1000 and will not fall off. Before solidification, the solid crystal film 1000 needs to be debonded, that is, the glue layer is solidified by ultraviolet light irradiation or the like, so that the glue layer loses about 98% of its adhesion, thereby reducing the bonding strength between the solid crystal film 1000 and the chip 2000. By debonding, the wafer 2000 on the die bonding film 1000 can be smoothly bonded off the die bonding film 1000 by the flux 4000 when it contacts the flux 4000 during the die bonding process.

[0051] In some embodiments of the present disclosure, optionally, the test platform 200 is detachably disposed on the force sensor 100 so that the test platform 200 can be replaced when it is damaged by corrosion, or can be disassembled and cleaned after the test platform 200 is contaminated.

[0052] In some embodiments of the present disclosure, optionally, the surface of the test carrier 200 is subjected to anti-corrosion treatment to prevent the acidic corrosion of the flux 4000 from damaging the test carrier 200 when the flux 4000 is carried.

[0053] In some embodiments of the present disclosure, Figures 1 to 8 As shown, the force sensor 100 is also called a resistance strain sensor, which belongs to the weighing sensor series. The force sensor 100 can be composed of an elastomer, a strain gauge, and a test circuit. Among them, the elastomer is a key component, which can be made of metal material and has sufficient elasticity to transmit tension and pressure; the strain gauge is a resistance element attached to the elastomer, which is used to test the deformation of the elastomer; the test circuit converts the resistance change of the strain gauge into an electrical signal output. This type of force sensor 100 has high durability and reliability, and can effectively improve the accuracy of the test results.

[0054] In some embodiments of the present disclosure, the response range of the force sensor 100 may be between -10g and 10g, which can meet the test range requirements of the bonding strength between the wafer 2000 and the solder flux 4000, and the bonding strength between the wafer 2000 and the post-debonding die bonding film 1000. Optionally, the resolution of the force sensor 100 may be 0.01g to 1g, for example, the resolution of the force sensor 100 is 0.01g, or, the resolution of the force sensor 100 is 0.1g, or, the resolution of the force sensor 100 is 1g.

[0055] In some embodiments of the present disclosure, the soldering flux 4000 is a mixture with rosin as the main component. The soldering flux 4000 can be used to isolate oxygen, clean the oxide film on the surface of the substrate, assist heat conduction, and reduce surface tension during soldering. The soldering flux 4000 has the characteristics of viscosity and low fluidity. In the die bonding process, it can be used to transfer the wafer 2000 from the die bonding film 1000 after debonding to the substrate.

[0056] In some embodiments of the present disclosure, before simulating the die bonding process and testing the die bonding conditions, the auxiliary adhesive 3000 may be attached to the test carrier 200. The auxiliary adhesive 3000 is used to adhere and fix the wafer 2000 to the test carrier 200, thereby ensuring that the wafer 2000 is separated from the debonded die bonding film 1000, thereby testing the bonding strength between the wafer 2000 and the debonded die bonding film 1000.

[0057] In some embodiments of the present disclosure, when the bonding condition testing device tests the bonding strength between the chip 2000 and the disintegrated bonding film 1000, in order to ensure that after the chip 2000 can be adhered and fixed on the test carrier 200 by the auxiliary adhesive 3000, the chip 2000 can be separated from the disintegrated bonding film 1000, it is necessary to ensure that the bonding strength between the auxiliary adhesive 3000 and the chip 2000 is greater than the bonding strength between the chip 2000 and the disintegrated bonding film 1000.

[0058] In some embodiments of the present disclosure, the bonding condition testing device can also test the bonding strength between the chip 2000 and the bonding film 1000 (undissolved). In order to ensure that the chip 2000 can be separated from the bonding film 1000 (undissolved) after the chip 2000 is adhered and fixed on the test carrier 200 by the auxiliary adhesive 3000, it is necessary to ensure that the bonding strength of the auxiliary adhesive 3000 is greater than the bonding strength between the chip 2000 and the bonding film 1000 (undissolved).

[0059] In some embodiments of the present disclosure, the auxiliary adhesive 3000 may be a double-sided adhesive, which is attached to the test carrier 200 to attach the wafer 200 to the test carrier 200 during the simulated die bonding process. Alternatively, the auxiliary adhesive 3000 may be other types of adhesives that are easily attached to and removed from the test carrier 200.

[0060] In some embodiments of the present disclosure, the probe 700 may optionally include a probe and a voice coil motor (VCM), wherein the voice coil motor has the characteristics of high frequency response and high precision. The probe is driven by the voice coil motor to switch between pressing the wafer membrane and lifting the wafer membrane.

[0061] As an optional implementation, Figure 1 As shown, the die-bonding condition testing device further includes a shock absorbing mechanism 300 , and the force sensor 100 is disposed on the shock absorbing mechanism 300 .

[0062] If the vibration around the die bonding condition test device is large, the force generated by the vibration may be detected by the force sensor 100 to generate noise with a continuous waveform. The noise with a continuous waveform has the risk of drowning out the effective waveform detected by the force sensor 100.

[0063] In some embodiments of the present disclosure, a shock absorbing mechanism 300 is also included in the solid crystal condition testing device. By setting the force sensor 100 on the shock absorbing mechanism 300, the shock absorbing mechanism 300 can be used to absorb shock to the force sensor 100, thereby reducing the adverse effects of surrounding vibrations on the force sensor 100 and making the waveform detected by the force sensor 100 smooth, thereby improving the accuracy of bonding strength detection.

[0064] As an optional implementation, Figure 1 As shown, the shock absorbing mechanism 300 is an air-floating shock absorber.

[0065] In some embodiments of the present disclosure, the air-floating shock absorber is an ideal vibration-reducing material that has a damping effect on vibration. The air-floating shock absorber is a device that uses the compressibility and elasticity of gas to reduce vibration, which can effectively reduce the vibration interference caused by the external environment to the force sensor 100, and can improve the stability and accuracy of the force sensor 100.

[0066] In some embodiments of the present disclosure, the air-floating shock absorber may include an upper plate, a lower plate, a sealing ring, a guide rod, and a regulating valve. Among them, a sealing ring is installed between the upper plate and the lower plate, and the sealing ring is filled with compressed air; the guide rod is used to fix the position of the upper plate and the lower plate, so that the upper plate and the lower plate remain relatively stable; the regulating valve is used to control the amount of gas entering and discharged, thereby adjusting the pressure and size of the gas inside the sealing ring. When the external environment causes vibration to the force sensor 100, it causes relative movement between the upper plate and the lower plate. At this time, the sealing ring is filled with compressed air and will be squeezed and deformed. The reaction force generated by the deformation can offset the impact force caused by the external vibration, thereby reducing the vibration interference caused by the external environment to the force sensor 100. At the same time, the regulating valve will automatically adjust the pressure of the gas inside the sealing ring, so that the damping characteristics of the air-floating shock absorber are optimized, and its shock absorption effect can be further improved. The air-floating shock absorber has the characteristics of high precision, low noise, energy saving and environmental protection, and high reliability, which can ensure that the force sensor 100 has a good shock absorption effect.

[0067] As an optional implementation, Figures 1 to 5 As shown, the carrying mechanism is configured to carry a wafer stage 400 . The wafer stage 400 is located on a side of the test stage 200 away from the force sensor 100 . The wafer stage 400 is used to carry a wafer film.

[0068] In some embodiments of the present disclosure, Figure 1 and Figure 2 As shown, the wafer stage 400 is used to carry the wafer film, and the carrying mechanism is used to carry the wafer stage 400, so that the wafer stage 400 and the wafer film can be suspended above the test stage 200. When the probe 700 presses down the chip 2000 in the wafer film, the area corresponding to the solid crystal film 1000 and the chip 2000 is deformed and moves down with the chip 2000, and the edge area of ​​the solid crystal film 1000 fixed by the wafer stage 400 remains unchanged. After the probe 700 moves upward and resets, the solid crystal film 1000 can be restored to a flattened state under the action of the edge area, wherein the flattened state of the wafer film 1000 means that any position in the wafer film is at the same level compared with other positions, or in a direction perpendicular to the wafer film 1000, the wafer film 1000 is not subjected to any force in this direction.

[0069] In some embodiments of the present disclosure, Figures 3 to 5As shown, optionally, the wafer stage 400 includes an inner wafer ring and an outer wafer ring, the outer wafer ring is sleeved outside the inner wafer ring and is concentrically arranged with the inner wafer ring, and the wafer film can be supported and expanded by the inner wafer ring and the outer wafer ring. Expansion is to uniformly expand the spacing between the wafers 2000 to meet the design requirements. The spacing between the wafers 2000 can be expanded by stretching the solid crystal film 1000, and then the stretched solid crystal film 1000 is covered on the inner wafer ring, and the outer wafer ring is sleeved on the stretched solid crystal film 1000 and the inner wafer ring from above the stretched solid crystal film 1000, so that the edge of the stretched solid crystal film 1000 is clamped between the inner wafer ring and the outer wafer ring, that is, by tightening the inner wafer ring and the outer wafer ring from the upper and lower sides of the wafer film, the wafer film support can be tightened on the inner wafer ring and the outer wafer ring, and a certain spacing is provided between adjacent wafers 2000 on the wafer film.

[0070] As an optional implementation, Figure 1 As shown, the die bonding condition testing device further includes an optical detection mechanism 500 , and the optical detection mechanism 500 is configured to perform positioning detection on the wafer 2000 .

[0071] In some embodiments of the present disclosure, Figure 1 As shown, the optical inspection mechanism 500 (Automated Optical Inspection, AOI) is configured to perform positioning inspection on the chip 2000 to ensure that the chip 2000 can correspond to the position of the flux 4000 or the auxiliary adhesive 3000 on the test carrier 200, so that when the probe 700 presses down the wafer film, the chip 2000 on the wafer film can be accurately pressed on the flux 4000 or the auxiliary adhesive 3000 on the test carrier 200.

[0072] In some embodiments of the present disclosure, Figure 1 As shown, the optical detection mechanism 500 can be set on the probe 700 and can move with the probe 700, so as to ensure that the relative position of the probe 700 and the chip 2000, and the relative position of the chip 2000 and the flux 4000 or the auxiliary adhesive 3000 are determined by the optical detection mechanism 500.

[0073] As an optional implementation, Figure 1 As shown, the die bonding condition testing device further includes a housing 600 , and the housing 600 is at least disposed outside the force sensor 100 and the wafer stage 400 .

[0074] In some embodiments of the present disclosure, Figure 1As shown, optionally, the solid crystal condition testing device further includes a shell 600, and the shell 600 is at least covered outside the force sensor 100 and the wafer carrier 400, so that the force sensor 100 and the wafer carrier 400 can be placed in a relatively dust-free and dry environment through the shell 600, thereby preventing external dust, water vapor, etc. from affecting the testing process of the solid crystal condition testing device.

[0075] In some embodiments of the present disclosure, Figure 1 As shown, optionally, the housing 600 may also cover other components of the die-bonding condition testing device therein to provide overall protection for the die-bonding condition testing device.

[0076] As an optional implementation, the die-bonding condition testing device further includes a first moving mechanism, and the first moving mechanism is configured to fix and support the force sensor 100 , or the first moving mechanism is configured to adjust the horizontal height of the force sensor 100 .

[0077] In some embodiments of the present disclosure, Figure 1 As shown, optionally, the first moving mechanism in the solid crystal condition testing device can be fixedly supported under the force sensor 100, and the force sensor 100 is set on the first moving mechanism. The force sensor 100 and the test platform 200 set on the force sensor 100 can be fixedly supported by the first moving mechanism.

[0078] In some embodiments of the present disclosure, Figure 1 As shown, optionally, the first moving mechanism in the die bonding condition test device can be supported under the force sensor 100, and the first moving mechanism can at least move in the height direction of the force sensor 100, so that the horizontal height of the force sensor 100 can be adjusted by the first moving mechanism, and then the first distance H1 between the test stage 200 and the wafer stage 400 located on the force sensor 100 (the distance between the upper surface of the adhesive and the die bonding film 1000) can be adjusted. By adjusting the first distance H1 between the test stage 200 and the wafer stage 400, different distance conditions between the wafer film and the substrate during the die bonding process can be simulated, and then the bonding strength between the wafer 2000 in the wafer film and the soldering flux 4000 under different distance conditions between the wafer film and the substrate can be tested, or the bonding strength between the wafer 2000 in the wafer film and the die bonding film 1000 after debonding can be tested under different distance conditions between the wafer film and the substrate.

[0079] In some embodiments of the present disclosure, optionally, when testing is performed using a bonding condition testing device, the first distance H1 between the test platform 200 and the bonding platform 400 can be adjusted using a first moving mechanism to simulate needle-piercing bonding conditions with different first distances H1.

[0080] As an optional implementation, the supporting mechanism is configured to fixedly support the wafer stage, or the supporting mechanism is configured to adjust the horizontal height and / or horizontal position of the wafer stage.

[0081] In some embodiments of the present disclosure, optionally, the supporting mechanism in the die bonding condition testing device is configured to fixedly support the wafer stage 400 , and the wafer stage 400 is fixedly supported by the supporting mechanism so that the wafer stage 400 is suspended above the test stage 200 .

[0082] In some embodiments of the present disclosure, optionally, the supporting mechanism in the solid crystal condition testing device is configured to adjust the horizontal height and / or horizontal position of the wafer stage, and the supporting mechanism is supported under the wafer stage 400 so that the wafer stage 400 is suspended above the test stage 200. At the same time, the supporting mechanism can also move in the horizontal direction and / or the height direction, so that the horizontal height and / or horizontal position of the wafer stage 400 can be adjusted by the supporting mechanism, thereby adjusting the first distance H1 between the wafer stage 400 and the test stage 200 (the distance between the upper surface of the adhesive and the solid crystal film 1000). By adjusting the first distance H1 between the wafer stage 400 and the test stage 200, different distance conditions between the wafer film and the substrate during the solidification process can be simulated, and then the bonding strength between the chip 2000 in the wafer film and the soldering flux 4000 under different distance conditions between the wafer film and the substrate can be tested, or the bonding strength between the chip 2000 in the wafer film and the solidification film 1000 after debonding can be tested under different distance conditions between the wafer film and the substrate. At the same time, the horizontal height and / or horizontal position of the wafer stage 400 is adjusted by the bearing mechanism, and then the second distance H2 between the wafer stage 400 and the probe 700 is adjusted. By adjusting the second distance H2 between the wafer carrier 400 and the probe 700, different distance conditions between the wafer film and the probe 700 during the solid crystal process can be simulated, thereby testing the bonding strength between the chip 2000 in the wafer film and the flux 4000 under different distance conditions between the wafer film and the probe 700, or testing the bonding strength between the chip 2000 in the wafer film and the solid crystal film 1000 under different distance conditions between the wafer film and the probe 700. At the same time, the horizontal height and / or horizontal position of the wafer stage 400 is adjusted by the supporting mechanism, and then the relative position of the wafer stage 400 and the flux 4000 or the auxiliary adhesive 3000 on the test stage 200 is adjusted, so that the chip 2000 in the wafer film supported by the wafer stage 400 corresponds to the position of the flux 4000 or the auxiliary adhesive 3000 on the test stage 200, so that when the probe 700 is pressed down, the chip 2000 and the flux 4000 or the auxiliary adhesive 3000 can be aligned and bonded, so that the bonding strength between the chip 2000 and the flux 4000 or the bonding strength between the chip 2000 and the solid crystal film 1000 after debonding can be tested.

[0083] In some embodiments of the present disclosure, when testing is performed using a die bonding condition testing device, the first distance H1 between the wafer carrier 400 and the test carrier 200 can be adjusted by a supporting mechanism to simulate needle-piercing die bonding conditions with different first distances H1.

[0084] In some embodiments of the present disclosure, when testing is performed using a die bonding condition testing device, the position of the wafer carrier 400 on the horizontal plane can be adjusted by a supporting mechanism so that the chip 2000 to be tested for die bonding in the wafer film is located directly below the probe 700 .

[0085] In some embodiments of the present disclosure, the wafer stage 400 and the probe 700 may be aligned manually or automatically by electric means.

[0086] As an optional implementation, Figure 1 and Figure 2 As shown, the die-bonding condition testing device further includes a needle-piercing die-bonding mechanism, and the needle-piercing die-bonding mechanism includes the above-mentioned probe.

[0087] In some embodiments of the present disclosure, Figure 1 and Figure 2 As shown, the crystal bonding condition testing device includes a needle puncture crystal bonding mechanism, and the test platform 200 is located under the probe 700 of the needle puncture crystal bonding mechanism, so that the force sensor 100, the test platform 200 and the needle puncture crystal bonding mechanism form an organic whole, so that the crystal bonding condition testing device can simulate different crystal bonding conditions of the crystal bonding process, and test the bonding strength between the chip 2000 and the flux 4000 and the bonding film 1000 after debonding under different crystal bonding conditions.

[0088] As an optional implementation, Figure 1 and Figure 2 As shown, the die bonding condition testing device further includes a third moving mechanism 800, which is configured to fix and support the needle puncture die bonding mechanism, or the third moving mechanism 800 is configured to adjust the horizontal height and horizontal position of the needle puncture die bonding mechanism.

[0089] In some embodiments of the present disclosure, optionally, Figure 1 and Figure 2 As shown, the third moving mechanism 800 in the crystal bonding condition testing device is used to fix and support the needle puncture crystal bonding mechanism so that the needle puncture crystal bonding mechanism is suspended above the wafer carrier 400.

[0090] In some embodiments of the present disclosure, optionally, Figure 1 and Figure 2As shown, the third moving mechanism 800 in the crystal bonding condition testing device is used to support the needle-piercing crystal bonding mechanism so that the needle-piercing crystal bonding mechanism is suspended above the wafer stage 400. At the same time, the third moving mechanism 800 can also move in the height direction and / or the horizontal direction, so that the horizontal height and / or the horizontal position of the needle-piercing crystal bonding mechanism 700 can be adjusted by the third moving mechanism 800, and then the second distance H2 between the probe 700 and the wafer stage 400 can be adjusted. By adjusting the second distance H2 between the probe 700 and the wafer stage 400, different distance conditions between the probe 700 and the wafer film during the crystal bonding process can be simulated, and then the bonding strength between the wafer 2000 in the wafer film and the soldering flux 4000 under different distance conditions between the probe 700 and the wafer film, or the bonding strength between the wafer 2000 in the wafer film and the debonded crystal bonding film 1000 under different distance conditions between the probe 700 and the wafer film can be tested. At the same time, the horizontal height and / or horizontal position of the needle puncture crystal bonding mechanism is adjusted by the third moving mechanism 800, and then the relative position of the needle puncture crystal bonding mechanism and the flux 4000 or the auxiliary adhesive 3000 on the test carrier 200 is adjusted, so that the position of the probe 700 in the needle puncture crystal bonding mechanism corresponds to the position of the flux 4000 or the auxiliary adhesive 3000 on the test carrier 200, so that when the probe 700 is pressed down, the chip 2000 and the flux 4000 or the auxiliary adhesive 3000 can be aligned and bonded, so that the bonding strength between the chip 2000 and the flux 4000 or the bonding strength between the chip 2000 and the debonded crystal film 1000 can be tested.

[0091] In some embodiments of the present disclosure, optionally, Figure 2As shown, the third moving mechanism 800 may include a first moving component 810, a second moving component 820 connected to the first moving component 810, and a third moving component 830 connected to the second moving component 820. The needle-piercing crystal bonding mechanism is arranged on the third moving component 830. The first moving component 810 can drive the second moving component 820, the third moving component 830 and the needle-piercing crystal bonding mechanism to move in the first horizontal direction D1. The second moving component 820 can drive the third moving component 830 and the needle-piercing crystal bonding mechanism to move in the second horizontal direction D2 perpendicular to the first horizontal direction D1. The third moving component 830 can drive the needle-piercing crystal bonding mechanism to move in the vertical direction D1 perpendicular to both the first horizontal direction D1 and the second horizontal direction D2. Therefore, through the first moving component 810, the second moving component 820 and the third moving component 830, the needle-piercing crystal bonding mechanism and the probe 700 can be arbitrarily moved in three-dimensional directions. After the probe 700 in the needle puncture bonding mechanism is adjusted to a relative position with the flux 4000 or the auxiliary adhesive 3000 on the test carrier 200 by the third moving mechanism 800, the probe 700 can be driven to move by the voice coil motor in the needle puncture bonding mechanism to press the wafer film, so that the chip 2000 on the wafer film is bonded to the flux 4000 or the auxiliary adhesive 3000 on the test carrier 200.

[0092] In some embodiments of the present disclosure, optionally, Figure 2 As shown, the first moving component 810, the second moving component 820 and the third moving component 830 can use linear motors to achieve movement in the first horizontal direction D1, the second horizontal direction D2 and the vertical direction D1, or can use a screw to convert the rotational motion of the screw motor into linear motion to achieve movement in the first horizontal direction D1, the second horizontal direction D2 and the vertical direction D1.

[0093] In some embodiments of the present disclosure, optionally, Figure 1 As shown, the die bonding condition testing device further includes a sensor meter 120 , which is electrically connected to the force sensor 100 , and the test data of the force sensor 100 can be obtained through the sensor meter 120 .

[0094] In some embodiments of the present disclosure, optionally, Figure 1 As shown, the die bonding condition testing device also includes a control center 130, which is electrically connected to the sensor instrument 120 and / or the force sensor 100. The die bonding condition testing device can be controlled by the control center 130 to perform testing work, and can also be used to display and analyze the test data of the force sensor 100, thereby improving the analysis efficiency of the die bonding condition test results.

[0095] In some embodiments of the present disclosure, optionally, Figure 1 As shown, the die-bonding condition testing device may further include a base 110 , and the force sensor 100 is supported by the base 110 .

[0096] In some embodiments of the present disclosure, the die bonding process can be simulated by a die bonding condition testing device, and any one or more of the following die bonding conditions in the die bonding process can be tested:

[0097] 1. The bonding strength between the wafer 2000 and the flux 4000. The test result can be used to determine whether the flux 4000 has abnormal bonding strength, or whether the flux 4000 is affected by the environment and has abnormal bonding strength under a specific die bonding environment;

[0098] 2. The bonding strength between the wafer 2000 and the die bonding film 1000 after debonding. The test result can be used to determine whether there is any bonding abnormality in the incoming wafer film, or whether there is any bonding abnormality in the wafer film after transportation and storage;

[0099] 3. The bonding strength between the wafer 2000 and the die bonding film 1000 before dissolution. The test result can be used to determine whether there is any bonding abnormality in the wafer film material;

[0100] 4. The actual pressure of the probe on the chip during die bonding. The test results can be used to determine the impact of the actual pressure of the probe on the chip on the die bonding effect;

[0101] 5. The influence of different probes on the bonding effect during bonding;

[0102] 6. The influence of different first heights and different second heights on the crystal bonding effect during crystal bonding.

[0103] In some embodiments of the present disclosure, the bonding strength process between the wafer 2000 and the disintegrated bonding film 1000 is tested by a bonding condition testing device. Figure 6 shown.

[0104] Before testing by the solid crystal condition test device, first, select the corresponding probe type according to the solid crystal process, set the corresponding first distance H1 and second distance H2; and attach the auxiliary adhesive 3000 to the test carrier 200, and ensure that the bonding strength between the auxiliary adhesive 3000 and the chip 2000 is greater than the bonding strength between the solid crystal film 1000 and the chip 2000 after debonding, wherein the bonding strength between the solid crystal film 1000 and the chip 2000 after debonding can be estimated based on the incoming material parameters of the wafer film. Afterwards, debond the wafer film, expand the debonded wafer film and tighten it on the wafer carrier 400; focus the position through the optical detection mechanism 500, so as to adjust the position of the wafer film and / or the position of the probe on the horizontal plane where the first horizontal direction D1 and the second horizontal direction D2 are located, so that a chip 2000 in the wafer film is located directly below the probe.

[0105] When tested by the die bonding condition test device, Figure 6 and Figure 7 As shown, the needle-piercing die bonding mechanism is started, so that the probe 700 is pressed down on the wafer film, and the wafer film and the chip 2000 at the corresponding position of the probe 700 are pressed down onto the auxiliary adhesive 3000 on the test carrier 200. The chip 2000 is subjected to the downward pressure of the probe 700. At this time, the force sensor 100 detects the pressure and generates a pressure signal. Figure 7 The positive extreme value F1 measured by the force sensor 100 can reflect the pressure on the chip 2000. At the same time, the chip 2000 is bonded and fixed by the auxiliary adhesive 3000 on the measuring platform. After that, the probe 700 is retracted, and the wafer film has a tendency to return to its original state under the elastic action of the solid crystal film 1000, that is, the solid crystal film 1000 rises relative to the measuring platform 200, and the solid crystal film 1000 exerts an upward pulling force on the chip 2000. At this time, the force sensor 100 detects the pulling force and generates a pulling force signal. Since the bonding strength between the auxiliary adhesive 3000 and the chip 2000 is greater than the bonding strength between the solid crystal film 1000 and the chip 2000 after debonding, the chip 2000 is separated from the solid crystal film 1000 after debonding under the action of the pulling force. Figure 7 The negative extreme value F2 measured by the force sensor 100 is the pulling force applied to the wafer 2000 when it is separated from the debonded die-bonding film 1000 , and can reflect the bonding strength between the debonded die-bonding film 1000 and the wafer 2000 .

[0106] In some embodiments of the present disclosure, the bonding strength process between the wafer 2000 and the soldering flux 4000 is tested by a die bonding condition testing device. Figure 8 shown.

[0107] Before testing by the die bonding condition test device, first, select the corresponding probe type according to the die bonding process, set the corresponding first distance H1 and second distance H2; and apply solder flux 4000 on the test carrier 200. After that, expand the wafer film without dissolution and tighten it on the wafer carrier 400; adjust the position of the wafer film and / or the position of the probe on the horizontal plane where the first horizontal direction D1 and the second horizontal direction D2 are located by focusing the optical detection mechanism 500, so that a chip 2000 in the wafer film is located directly below the probe.

[0108] When tested by the die bonding condition test device, such as Figure 8As shown, the needle puncture solid crystal mechanism is started, so that the probe 700 is pressed down on the top of the wafer film, and the wafer film and the chip 2000 at the corresponding position of the probe are pressed down onto the flux 4000 on the test carrier 200. The chip 2000 is subjected to the downward pressure of the probe. At this time, the force sensor 100 detects the pressure and generates a pressure signal. The positive extreme value measured by the force sensor 100 can reflect the pressure on the chip 2000. At the same time, the chip 2000 is bonded and fixed by the flux 4000 on the measuring carrier; then the probe is retracted, and the wafer film has a tendency to return to its original state under the elastic action of the solid crystal film 1000, that is, the solid crystal film 1000 rises relative to the measuring carrier, and the solid crystal film 1000 generates an upward pulling force on the chip 2000. At this time, the force sensor 100 detects the pulling force and generates a pulling signal. Since the wafer film has not been debonded, the bonding strength between the undebonded wafer film and the chip 2000 is greater than the bonding strength between the flux 4000 and the chip 2000. Under the action of the pulling force, the chip 2000 and the flux 4000 are separated. The negative extreme value measured by the force sensor 100 is the pulling force applied to the chip 2000 when the flux 4000 is separated, which can reflect the bonding strength between the flux 4000 and the chip 2000.

[0109] In some embodiments of the present disclosure, when the influence of different probes, different first distances H1 and different second distances H2 on the solid crystal effect during the solid crystal process is tested by a solid crystal condition testing device. Before testing by the solid crystal condition testing device, first, different probes, different first distances H1 and different second distances H2 can be selected or set according to different test purposes, and the subsequent measurement process can refer to the measurement process of the bonding strength between the wafer 2000 and the solid crystal film 1000 after debonding, which will not be repeated here.

[0110] Based on the same inventive concept, the present disclosure also proposes a testing method for the above-mentioned die bonding condition testing device, the testing method comprising:

[0111] Place adhesive;

[0112] Wafer film loading machine; and,

[0113] Perform a die bonding operation to obtain a test result of the force sensor 100;

[0114] Among them, the adhesive is flux 4000 or auxiliary adhesive 3000;

[0115] When the adhesive is the soldering flux 4000, and the bonding strength between the wafer 2000 and the soldering flux 4000 is less than the bonding strength between the wafer 2000 and the die-bonding film 1000, the bonding strength between the wafer 2000 and the soldering flux 4000 is obtained according to the test result;

[0116] When the adhesive is the auxiliary adhesive 3000 and the bonding strength between the wafer 2000 and the auxiliary adhesive 3000 is greater than the bonding strength between the wafer 2000 and the debonded die-bonding film 1000, the bonding strength between the wafer 2000 and the debonded die-bonding film 1000 is obtained according to the test result.

[0117] Since the testing method provided in the present disclosure uses the die bonding condition testing device of the above technical solution, the die bonding condition testing method provided in the present disclosure has all the beneficial effects of the above die bonding condition testing device, which will not be elaborated here.

[0118] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0119] In the description of the present disclosure, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise" and "counterclockwise" indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0120] It should be noted that all directional indications in the embodiments of the present disclosure are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0121] In addition, in the present disclosure, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0122] In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the fact that ordinary technicians in the field can implement it. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this disclosure.

[0123] Although embodiments of the present disclosure have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations may be made to the embodiments without departing from the principles and spirit of the present disclosure, the scope of which is defined by the claims and their equivalents.

Claims

1. A die bonding condition testing device, characterized in that: The die bonding condition testing device comprises: Force sensor; A test platform, the test platform is arranged on the force sensor, the test platform is configured to place an adhesive, and the adhesive is located on a side of the test platform away from the force sensor; A carrying mechanism, wherein the carrying mechanism is configured to carry a wafer film, wherein the wafer film includes a solid crystal film and a chip, wherein the chip is located on a side of the solid crystal film close to the test carrier, and when the chip is located on the solid crystal film and the solid crystal film is in a flattened state, the chip is spaced apart from the adhesive; and A probe, the probe being located at a side of the wafer film away from the test carrier; The adhesive is a soldering flux or an auxiliary adhesive; When the adhesive is a soldering flux, and the bonding strength between the wafer and the soldering flux is less than the bonding strength between the wafer and the die-bonding film, the die-bonding condition testing device is used to test the bonding strength between the wafer and the soldering flux; When the adhesive is an auxiliary adhesive and the bonding strength between the chip and the auxiliary adhesive is greater than the bonding strength between the chip and the debonded die film, the die bonding condition testing device is used to test the bonding strength between the chip and the debonded die film.

2. The die bonding condition testing device according to claim 1, characterized in that: The die bonding condition testing device further includes a shock absorbing mechanism, and the force sensor is arranged on the shock absorbing mechanism.

3. The die bonding condition testing device according to claim 2, characterized in that: The shock absorbing mechanism is an air-floating shock absorber.

4. The die bonding condition testing device according to any one of claims 1 to 3, characterized in that: The carrying mechanism is configured to carry a wafer stage, the wafer stage is located on a side of the test stage away from the force sensor, and the wafer stage is used to carry the wafer film.

5. The die bonding condition testing device according to claim 4, characterized in that: The die bonding condition testing device further includes an optical detection mechanism, and the optical detection mechanism is configured to perform positioning detection on the wafer.

6. The die bonding condition testing device according to claim 4, characterized in that: The die bonding condition testing device further comprises: A shell is provided at least to cover the force sensor and the wafer stage.

7. The die bonding condition testing device according to claim 4, characterized in that: The die bonding condition testing device further comprises: A first moving mechanism, wherein the first moving mechanism is configured to fixedly support the force sensor, or the first moving mechanism is configured to adjust the horizontal height of the force sensor.

8. The die bonding condition testing device according to claim 4, characterized in that: The supporting mechanism is configured to fixedly support the wafer stage, or the supporting mechanism is configured to adjust the horizontal height and / or horizontal position of the wafer stage.

9. The die bonding condition testing device according to claim 4, characterized in that: The crystal bonding condition testing device further comprises a needle puncture crystal bonding mechanism, and the needle puncture crystal bonding mechanism comprises the probe.

10. The die bonding condition testing device according to claim 9, characterized in that: The die bonding condition testing device further comprises: The third moving mechanism is configured to fixedly support the needle puncture crystal bonding mechanism, or the third moving mechanism is configured to adjust the horizontal height and horizontal position of the needle puncture crystal bonding mechanism.

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