Ion etching equipment

Abstract

The utility model provides an equipment main body, a separator, a substrate table and an electromagnetic shielding device. The equipment main body is provided with an accommodating cavity; the isolation piece is connected to the inner wall of the equipment body, the isolation piece divides the containing cavity into a first cavity and a second cavity, the isolation piece is provided with a first through hole, and the first cavity and the second cavity are communicated through the first through hole; the substrate table is movably connected with the equipment main body; the electromagnetic shielding device is connected with the isolation piece, the electromagnetic shielding device surrounds the outer periphery of the first through hole, and at least one part of the electromagnetic shielding device can move relative to the isolation piece so as to be close to the first through hole; wherein the ion etching equipment comprises an etching state, in the etching state, the substrate table is located at the position where the first through hole is located, the electromagnetic shielding device abuts against the substrate table, and the first through hole is jointly sealed by the substrate table and the electromagnetic shielding device. According to the ion etching equipment, leakage of electromagnetic waves can be effectively avoided, and the stability of ion etching operation can be guaranteed.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an ion etching device. Background Art

[0002] The ion etching equipment has a process chamber with a certain plasma density and plasma energy. The substrate stage is used to carry the workpiece and keep it in the process chamber for etching. The problem is that electromagnetic waves are easy to leak from the process chamber, resulting in energy loss and abnormal discharge of the ion etching equipment, affecting the stability of the process. Utility Model Content

[0003] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes an ion etching device that can effectively avoid the leakage of electromagnetic waves and is beneficial to ensuring the stability of the ion etching operation.

[0004] An ion etching device according to an embodiment of the present application includes a device body, an isolation member, a substrate stage, and an electromagnetic shielding device;

[0005] The device body is provided with a receiving cavity;

[0006] The isolating member is connected to the inner wall of the device body, the isolating member separates the accommodating chamber into a first chamber and a second chamber, the isolating member is provided with a first through hole, and the first chamber and the second chamber are connected through the first through hole;

[0007] The substrate stage is movably connected to the device body;

[0008] The electromagnetic shielding device is connected to the isolating member, and the electromagnetic shielding device surrounds the outer periphery of the first through hole, and at least a portion of the electromagnetic shielding device can move relative to the isolating member to approach the first through hole;

[0009] Wherein, the ion etching equipment includes an etching state. In the etching state, the substrate stage is located at the location of the first through hole, the electromagnetic shielding device abuts the substrate stage, and the substrate stage and the electromagnetic shielding device jointly close the first through hole.

[0010] According to the ion etching equipment of the embodiment of the present application, at least the following beneficial effects are achieved: the ion etching operation is performed in the first chamber, the electromagnetic shielding device surrounds the outer periphery of the first through hole, and at least a portion of it can move relative to the isolation member close to the first through hole, and the electromagnetic shielding device supports the substrate stage in the etching state, and the electromagnetic shielding device is used to close the gap between the substrate stage and the hole wall of the first through hole, blocking the connection between the first chamber and the second chamber, effectively avoiding the leakage of electromagnetic waves in the first chamber, and ensuring the stability of the ion etching process.

[0011] According to some embodiments of the present application, the electromagnetic shielding device includes a driving component and a shielding member, the driving component is connected to the isolating member, the driving component is also connected to the shielding member, the shielding member is distributed around the outer periphery of the first through hole, the driving component is fixedly connected to the isolating member, the driving component is located on the side of the shielding member away from the first through hole, and the driving component is used to drive the shielding member to approach the first through hole so that in the etching state, the shielding member abuts against the outer peripheral wall of the substrate table.

[0012] According to some embodiments of the present application, the driving assembly includes a fixed seat and a connecting member, the fixed seat is connected to the isolating member, the connecting member is movably connected to the fixed seat, and the connecting member is also connected to the shielding member, the fixed seat is located on the side of the shielding member away from the first through hole, and the connecting member and the shielding member can be close to the first through hole together.

[0013] According to some embodiments of the present application, the connecting member is rotatably connected to the fixing seat, and the connecting member is also rotatably connected to the shielding member. When the connecting member rotates relative to the fixing seat, the shielding member moves relative to the fixing seat to approach the first through hole.

[0014] According to some embodiments of the present application, the electromagnetic shielding device includes a plurality of shielding components, each of which is connected in sequence and distributed around the outer periphery of the first through hole, and portions of two adjacent shielding components abut against each other to form a shielding gap, which is used to avoid relative movement between adjacent shielding components.

[0015] According to some embodiments of the present application, a shielding portion is provided at the shielding gap, the shielding portion protrudes outward from the side wall of the shielding member, the shielding portion includes a first contact surface and a second contact surface, and an angle is formed between the first contact surface and the second contact surface. In the etched state, adjacent shielding members abut the first contact surface and the second contact surface.

[0016] According to some embodiments of the present application, the electromagnetic shielding device includes multiple driving components and shielding parts, each driving component is connected to the isolation component, and each driving component is connected to each shielding component one by one, two adjacent shielding components abut against each other, and each shielding component is distributed around the outer periphery of the first through hole.

[0017] According to some embodiments of the present application, the ion etching equipment further includes an insulating component, wherein the insulating component covers at least a portion of the electromagnetic shielding device.

[0018] According to some embodiments of the present application, the insulating assembly includes a first insulating member and a second insulating member, the electromagnetic shielding device includes a fixed seat and a connecting member, the fixed seat is provided with a second through hole, the fixed seat is connected to the insulating member, the connecting member is passed through the second through hole and is movably connected to the fixed seat, the first insulating member is located on one side of the fixed seat and covers the connecting member, and the second insulating member is connected to the other side of the fixed seat and covers the second through hole.

[0019] According to some embodiments of the present application, the electromagnetic shielding device also includes a fixing member, which is connected to the shielding member. In the vertical direction, the fixing member is located on the side of the shielding member away from the isolation member. In the horizontal direction, the fixing member extends toward the first through hole. In the etching state, the fixing member is used to support the substrate.

[0020] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present application is further described below with reference to the accompanying drawings and embodiments, wherein:

[0022] Figure 1 This is a schematic diagram of the structure of the electromagnetic shielding device according to an embodiment of the present application;

[0023] Figure 2 This is a schematic diagram of the structure of the ion etching device according to an embodiment of the present application;

[0024] Figure 3 A top view of the electromagnetic shielding device according to an embodiment of the present application;

[0025] Figure 4 for Figure 3 Sectional view at AA in the middle;

[0026] Figure 5 for Figure 4 A partial enlarged schematic diagram of point B in the middle;

[0027] Figure 6 for Figure 3 A local enlarged schematic diagram of the middle A;

[0028] Figure 7 for Figure 6 Cross-sectional view of BB.

[0029] Reference numerals: device body 100 , accommodating chamber 110 , first chamber 111 , second chamber 112 , isolation member 120 , first through hole 121 , substrate stage 130 ;

[0030] Electromagnetic shielding device 200, driving assembly 210, fixing seat 211, second through hole 2111, connecting member 212, shielding member 220, shielding gap 221, shielding portion 222, first contact surface 2221, second contact surface 2222, fixing member 230;

[0031] The insulating component 300 , the first insulating component 310 , and the second insulating component 320 . DETAILED DESCRIPTION

[0032] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0033] In the description of the present application, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0034] In the description of this application, "several" means more than one, "more" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0035] In the description of this application, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0036] In the description of the present application, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0037] The following is an introduction to the embodiments of the present application in conjunction with the accompanying drawings:

[0038] refer to Figure 1 and Figure 2According to the ion etching device of the embodiment of the present application, the device includes a device body 100, an isolation member 120, a substrate stage 130 and an electromagnetic shielding device 200. The device body 100 is provided with a accommodating chamber 110. The isolation member 120 is connected to the inner wall of the device body 100. The isolation member 120 separates the accommodating chamber 110 into a first chamber 111 and a second chamber 112. The isolation member 120 is provided with a first through hole 121. The first chamber 111 and the second chamber 112 are connected through the first through hole 121. The substrate stage 130 is movably connected to the device body 100 and is used to carry the substrate to move between the first chamber 111 and the second chamber 112. The substrate is ion etched in the first chamber 111 and loaded and unloaded in the second chamber 112. The electromagnetic shielding device 200 is connected to the isolation member 120, and the electromagnetic shielding device 200 surrounds the outer periphery of the first through hole 121. At least a portion of the electromagnetic shielding device 200 can move relative to the isolation member 120 to approach the first through hole 121. In the etching state, at least a portion of the electromagnetic shielding device 200 abuts against the substrate stage 130 to close the gap between the outer peripheral wall of the substrate stage 130 and the hole wall of the first through hole 121, thereby effectively avoiding the leakage of electromagnetic waves in the first chamber 111, which is beneficial to ensuring the stability of the ion etching operation.

[0039] Specifically, the ion etching device includes an etching state and a non-etching state. In the etching state, the substrate stage 130 is located at the location of the first through hole 121, the substrate is located in the first chamber 111, at least a portion of the electromagnetic shielding device 200 abuts against the outer peripheral wall of the substrate stage 130, and the substrate stage 130 and the electromagnetic shielding device 200 jointly seal the first through hole 121 to prevent the electromagnetic wave in the first chamber 111 from leaking into the second chamber 112, thereby ensuring the stable progress of the ion etching operation. When the ion etching is completed, the substrate stage 130 moves relative to the device body 100 in the vertical direction, and carries the etched substrate into the second chamber 112. A gripping device is provided in the second chamber 112, and the gripping device takes off the etched substrate. At this time, the ion etching device is in a non-etching state. That is, when the substrate is located in the first chamber 111, the ion etching device is in an etching state, and when the substrate is located in the second chamber 112, the ion etching device is in a non-etching state.

[0040] It should be noted that the first chamber 111 and the second chamber 112 are both vacuum chambers. The position of the electromagnetic shielding device 200 is adjusted before the ion etching operation. After the ion etching operation begins, the position of the electromagnetic shielding device 200 remains unchanged, that is, the position of the electromagnetic shielding device 200 does not change with the rise and fall of the substrate stage 130. The adjustable position of the electromagnetic shielding device 200 is beneficial to improving the adaptability of the electromagnetic shielding device 200 to the size of the substrate stage 130, and is also helpful to compensate for the installation error of the substrate stage 130, ensuring the shielding of the electromagnetic waves by the first chamber 111 and avoiding the leakage of electromagnetic waves. The second chamber 112 is also connected to the material chamber, and the gripping device moves and transports the substrate between the second chamber 112 and the material chamber. In addition, the part of the electromagnetic shielding device 200 that contacts the substrate stage 130 is made of insulating material, which is used to avoid the electromagnetic shielding device 200 being electrically connected to the substrate stage 130 and causing energy loss or abnormal discharge, which is beneficial to ensuring the quality of ion etching.

[0041] refer to Figure 1 and Figure 2 In some embodiments, the electromagnetic shielding device 200 includes a driving component 210 and a shielding member 220. The driving component 210 is connected to the isolation member 120. The driving component 210 is also connected to the shielding member 220 and is used to drive the shielding member 220 to approach or move away from the first through hole 121. The shielding member 220 is distributed around the outer periphery of the first through hole 121 and abuts against the outer peripheral wall of the substrate stage 130 in the etching state, thereby closing the gap between the outer peripheral wall of the substrate stage 130 and the inner wall of the first through hole 121. The driving component 210 is fixedly connected to the isolation member 120 and is located on a side of the shielding member 220 away from the first through hole 121, so as to avoid interfering with the shielding member 220 approaching or moving away from the first through hole 121. The relative distance between the shielding member 220 and the substrate stage 130 can be adjusted by the driving component 210, which is beneficial to better adapt to the size of the substrate stage 130, and adjust the position of the shielding member 220 according to the actual installation position of the substrate stage 130 to achieve a better shielding effect.

[0042] It should be noted that, in the etching state, the shielding member 220 abuts against the outer peripheral wall of the substrate stage 130 in the horizontal direction and abuts against the isolation member 120 in the vertical direction, so as to close the gap between the outer peripheral wall of the substrate stage 130 and the inner wall of the first through hole 121. The driving component 210 may be a motor, which drives the shielding member 220 to move in a straight line through a gear rack, or a driving cylinder to drive the shielding member 220 to move, or a bolt to drive the shielding member 220 to move. The driving component 210 includes but is not limited to the above-mentioned driving structure, and can drive the shielding member 220 to move in a straight line.

[0043] refer to Figures 2 to 5In some embodiments, the driving component 210 includes a fixed seat 211 and a connecting member 212. The fixed seat 211 is connected to the isolation member 120. The connecting member 212 is movably connected to the fixed seat 211. The connecting member 212 is also connected to the shielding member 220. The fixed seat 211 is located on the side of the shielding member 220 away from the first through hole 121, which is used to avoid interfering with the shielding member 220 approaching or moving away from the first through hole 121. The connecting member 212 moves relative to the fixed seat 211, and can drive the shielding member 220 to approach or move away from the first through hole 121. In the etching state, the shielding member 220 resists the outer wall of the substrate stage 130, which is used to block the gap between the substrate stage 130 and the isolation member 120, and prevent the electromagnetic waves in the first chamber 111 from leaking to the second chamber 112 through the gap.

[0044] refer to Figures 2 to 5 In some embodiments, the connecting member 212 is rotatably connected to the fixing seat 211, and the connecting member 212 is also rotatably connected to the shielding member 220. When the connecting member 212 rotates relative to the fixing seat 211, the connecting member 212 has a linear motion along the horizontal direction, thereby driving the shielding member 220 to move relative to the fixing seat 211, which is used to adjust the relative distance between the shielding member 220 and the substrate stage 130, while ensuring that there is no interference with the lifting and lowering of the substrate stage 130, and increasing the shielding effect of the first chamber 111 on electromagnetic waves.

[0045] It should be noted that the connecting member 212 may be a bolt, and the connecting member 212 generates a linear motion by rotating relative to the fixing seat 211, thereby driving the shielding member 220 to move together, and driving the shielding member 220 to move by threaded transmission, providing a high-precision driving method, which is convenient for more accurate adjustment of the position of the shielding member 220. In addition, when the connecting member 212 rotates, the connecting member 212 also rotates relative to the shielding member 220, which is used to prevent the shielding member 220 from rotating together with the connecting member 212. In addition, the shielding member 220 is an insulating structure, which is used to prevent the shielding member 220 from contacting the substrate stage 130 to generate abnormal discharge and energy loss, which is beneficial to ensure the stability of the etching operation.

[0046] refer to Figures 1 to 5In some embodiments, the electromagnetic shielding device 200 includes a plurality of shielding members 220, each of which is connected in sequence and distributed around the outer periphery of the first through hole 121, and a portion of two adjacent shielding members 220 abut against each other to form a shielding gap 221, and the shielding gap 221 is used to avoid relative movement between adjacent shielding members 220. Specifically, among the two adjacent shielding members 220, one shielding member 220 abuts against the side wall of the other shielding member 220 to define the shielding gap 221, and the outer peripheral wall of the substrate stage 130 is composed of a plurality of side walls. Arranging a plurality of shielding members 220 facilitates adjusting the relative distance between the shielding members 220 and the substrate stage 130 on each side of the substrate stage 130, and the shielding gap 221 provides a fine-tuning movement space for the movement of the plurality of shielding members 220.

[0047] refer to Figures 5 to 7 In some embodiments, a shielding portion 222 is provided at the shielding gap 221, and the shielding portion 222 protrudes from the side wall of the shielding member 220. The shielding portion 222 includes a first contact surface 2221 and a second contact surface 2222. There is an angle between the first contact surface 2221 and the second contact surface 2222. In the etched state, adjacent shielding members 220 abut against the first contact surface 2221 and the second contact surface 2222 to further limit the leakage of electromagnetic waves.

[0048] It should be noted that Figure 6 The dashed lines indicate invisible contours.

[0049] refer to Figures 2 to 5 It should be noted that the first chamber 111 and the second chamber 112 are both vacuum chambers during the etching operation. Electromagnetic waves propagate in a straight line in a vacuum environment. The shielding portion 222 provides an angled abutment surface at the connection between two adjacent shielding members 220. The electromagnetic wave needs to change its propagation direction in order to leak from the connection between the two adjacent shielding members 220 in a direction parallel to the first contact surface 2221 and in a direction parallel to the second contact surface 2222, which is beneficial to further avoid electromagnetic wave leakage.

[0050] The setting of the shielding gap 221 makes the connection between the two adjacent shielding members 220 form a U-shaped structure, and the setting of the shielding portion 222 makes the connection between the two adjacent shielding members 220 form a staggered splicing structure, that is, along the vertical direction and along the horizontal direction, the two adjacent shielding members 220 both include overlapping parts, forming a staggered structure. Therefore, the setting of the shielding gap 221 and the shielding portion 222 makes the connection between the two adjacent shielding members 220 form a U-shaped staggered splicing structure, which is beneficial to further improve the shielding effect of the connection between the two adjacent shielding members 220 on electromagnetic waves.

[0051] In other embodiments, the first contact surface 2221 is perpendicular to the second contact surface 2222, that is, the angle between the first contact surface 2221 and the second contact surface 2222 is 90°. This facilitates the processing and manufacturing of the shielding part 222 while limiting the leakage of electromagnetic waves, and also helps to ensure the shielding of electromagnetic waves between two adjacent shielding parts 220.

[0052] refer to Figures 1 to 3 In some embodiments, the electromagnetic shielding device 200 includes a plurality of driving components 210 and shielding members 220, each driving component 210 is connected to the isolation member 120, and each driving component 210 is connected to the shielding member 220 in a one-to-one correspondence, that is, one driving component 210 is connected to one shielding member 220 and drives one shielding member 220 to move. Two adjacent shielding members 220 abut against each other, and each shielding member 220 is distributed around the outer periphery of the first through hole 121. Each driving component 210 is independent of each other. By driving a single shielding member 220 by a single driving component 210, it is beneficial to more finely control the movement of each shielding member 220, and further improve the shielding effect of the first chamber 111 on electromagnetic waves.

[0053] refer to Figures 2 to 5 In other embodiments, the driving component 210 includes a fixed seat 211 and a connecting member 212, and the electromagnetic shielding device 200 also includes a plurality of shielding members 220, wherein the number of the fixed seat 211, the connecting member 212 and the shielding member 220 corresponds one to one, and each fixed seat 211, each connecting member 212 and each shielding member 220 is connected one to one, each fixed seat 211 is connected to the isolation member 120, two adjacent shielding members 220 abut against each other, and each shielding member 220 is distributed around the outer periphery of the first through hole 121. By rotating the connecting member 212, the shielding members 220 can be driven to move together in the horizontal direction. In the etching state, the rotating connecting member 212 adjusts the relative distance between the shielding member 220 and the substrate stage 130, thereby realizing the interval shielding between the substrate stage 130 and the isolation member 120, and effectively avoiding the leakage of electromagnetic waves.

[0054] refer to Figures 1 to 3In other embodiments, the electromagnetic shielding device 200 may include four fixed seats 211, four connecting members 212 and four shielding members 220. In the vertical direction, the four fixed seats 211 are all connected to one side of the isolation member 120, and each fixed seat 211 is rotatably connected to a connecting member 212, and each connecting member 212 is rotatably connected to a single shielding member 220. The substrate stage 130 may be a square structure. In the etching state, the four shielding members 220 abut against the outer peripheral wall of the substrate stage 130 to close the gap between the substrate stage 130 and the hole wall of the first through hole 121. The four connecting members 212 are independent of each other, that is, each connecting member 212 can rotate independently, thereby driving the connected shielding member 220 to move. The four shielding members 220 can move independently, which is beneficial to better adapt to the shape or installation error of the substrate stage 130 and provide a more refined adjustment method to obtain a better shielding effect.

[0055] refer to Figure 4 and Figure 5 In some embodiments, the ion etching device further includes an insulating component 300, which covers at least a portion of the electromagnetic shielding device 200 and is used to block the contact between the electromagnetic shielding device 200 and the electromagnetic wave, avoid abnormal discharge and energy loss, and ensure the stability of the ion etching operation.

[0056] refer to Figure 5 In some embodiments, the insulating component 300 includes a first insulating member 310 and a second insulating member 320, and the electromagnetic shielding device 200 includes a fixed seat 211 and a connecting member 212. The fixed seat 211 is connected to the isolating member 120. The fixed seat 211 is provided with a second through hole 2111, the fixed seat 211 is connected to the isolating member 120, the connecting member 212 is passed through the second through hole 2111, and is movably connected to the fixed seat 211. The first insulating member 310 is located on one side of the fixed seat 211 and covers the connecting member 212. The second insulating member 320 is connected to the other side of the fixed seat 211 and covers the second through hole 2111, thereby blocking the contact between the connecting member 212 and the electromagnetic wave, effectively avoiding abnormal discharge and energy loss, and helping to improve the quality of ion etching operations.

[0057] It should be noted that the fixing seat 211 and the shielding member 220 are both set as insulating structures, and the connecting member 212 can be a metal bolt, which is convenient for selecting standard parts and reducing costs. The first insulating member 310 and the second insulating member 320 block the contact between the connecting member 212 and the electromagnetic wave to avoid abnormal discharge and energy loss.

[0058] refer to Figure 2 and Figure 3In some embodiments, the electromagnetic shielding device 200 further includes a fixing member 230, which is connected to the shielding member 220 and moves together with the shielding member 220. In the vertical direction, the fixing member 230 is located on the side of the shielding member 220 away from the isolation member 120. In the horizontal direction, the fixing member 230 extends toward the first through hole 121, so as to ensure that in the etching state, the fixing member 230 supports the outer edge of the substrate, and together with the substrate stage 130 limits the movement of the substrate in the vertical direction, which is beneficial to ensure the stability of the substrate during the etching operation.

[0059] Specifically, in the etching state, the substrate stage 130 is located at the location of the first through hole 121 and is supported at the bottom of the substrate, the fixing member 230 supports the top of the substrate, and the fixing member 230 and the substrate stage 130 jointly fix the substrate in the vertical direction to prevent the substrate from moving in the vertical direction during the etching process, thereby improving the stability of the ion etching operation.

[0060] It should be noted that before the etching operation, by adjusting the position of the fixing member 230, the fixing member 230 can be supported on the top of the substrate and the etching area of ​​the substrate can be avoided. The adjustable position of the fixing member 230 is convenient for adaptively fixing substrates of different sizes.

[0061] refer to Figures 1 to 3 In other embodiments, in the etching state, the fixing member 230 supports the top of the substrate and avoids the etching area of ​​the substrate. The fixing member 230 and the shielding member 220 jointly close the gap between the outer wall of the substrate stage 130 and the hole wall of the first through hole 121 to avoid leakage of electromagnetic waves.

[0062] It should be noted that, on the basis of the fixing member 230 abutting against the fixed substrate, the shielding member 220 abuts against the isolation member 120 , and the shielding member 220 may contact the substrate stage 130 or may not contact the substrate stage 130 , so as to achieve the fixation of the substrate while avoiding the leakage of electromagnetic waves in the first chamber 111 .

[0063] The embodiments of the present application are described in detail above in conjunction with the accompanying drawings, but the present application is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present application. In addition, the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

Claims

1. An ion etching device, characterized in that: include: The device body is provided with a receiving cavity; an isolating member connected to the inner wall of the device body, the isolating member separating the accommodating chamber into a first chamber and a second chamber, the isolating member being provided with a first through hole, the first chamber and the second chamber being connected through the first through hole; A substrate stage, movably connected to the device body; an electromagnetic shielding device connected to the isolating member, the electromagnetic shielding device surrounds the outer periphery of the first through hole, and at least a portion of the electromagnetic shielding device is movable relative to the isolating member to approach the first through hole; Wherein, the ion etching equipment includes an etching state, in which the substrate stage is located at the location of the first through hole, the electromagnetic shielding device abuts against the substrate stage, and the substrate stage and the electromagnetic shielding device jointly close the first through hole.

2. The ion etching device according to claim 1, characterized in that: The electromagnetic shielding device includes a driving component and a shielding member, wherein the driving component is connected to the isolating member, and the driving component is also connected to the shielding member, and the shielding member is distributed around the outer periphery of the first through hole. The driving component is fixedly connected to the isolating member, and the driving component is located on the side of the shielding member away from the first through hole. The driving component is used to drive the shielding member to approach the first through hole so that in the etching state, the shielding member abuts against the outer peripheral wall of the substrate stage.

3. The ion etching device according to claim 2, characterized in that: The driving assembly includes a fixed seat and a connecting member, wherein the fixed seat is connected to the isolating member, the connecting member is movably connected to the fixed seat, and the connecting member is also connected to the shielding member, the fixed seat is located on a side of the shielding member away from the first through hole, and the connecting member and the shielding member can be close to the first through hole together.

4. The ion etching device according to claim 3, characterized in that: The connecting member is rotatably connected to the fixing seat, and the connecting member is also rotatably connected to the shielding member. When the connecting member rotates relative to the fixing seat, the shielding member moves relative to the fixing seat to approach the first through hole.

5. The ion etching equipment according to claim 2, characterized in that: The electromagnetic shielding device includes a plurality of the shielding components, each of which is connected in sequence and distributed around the outer periphery of the first through hole, and a portion of two adjacent shielding components abut against each other to form a shielding gap, and the shielding gap is used to avoid relative movement between adjacent shielding components.

6. The ion etching device according to claim 5, characterized in that: A shielding portion is provided at the shielding gap, the shielding portion protrudes outward from the side wall of the shielding component, the shielding portion includes a first contact surface and a second contact surface, an angle is formed between the first contact surface and the second contact surface, and in the etching state, adjacent shielding components abut the first contact surface and the second contact surface.

7. The ion etching equipment according to claim 2, characterized in that: The electromagnetic shielding device includes a plurality of driving components and shielding parts, each of the driving components is connected to the isolation part, and each of the driving components is connected to each of the shielding parts in a one-to-one correspondence, two adjacent shielding parts abut against each other, and each of the shielding parts is distributed around the outer periphery of the first through hole.

8. The ion etching equipment according to claim 1, characterized in that: The ion etching equipment further includes an insulating component, wherein the insulating component covers at least a portion of the electromagnetic shielding device.

9. The ion etching device according to claim 8, characterized in that: The insulating assembly includes a first insulating member and a second insulating member, and the electromagnetic shielding device includes a fixing seat and a connecting member. The fixing seat is provided with a second through hole, and the fixing seat is connected to the isolating member. The connecting member is passed through the second through hole and is movably connected to the fixing seat. The first insulating member is located on one side of the fixing seat and covers the connecting member, and the second insulating member is connected to the other side of the fixing seat and covers the second through hole.

10. The ion etching equipment according to claim 2, characterized in that: The electromagnetic shielding device also includes a fixing member, which is connected to the shielding member. In the vertical direction, the fixing member is located on the side of the shielding member away from the isolation member. In the horizontal direction, the fixing member extends toward the first through hole. In the etching state, the fixing member is used to support the substrate.

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