Monocrystalline silicon furnace system

Abstract

The utility model discloses a monocrystalline silicon furnace system, and relates to the technical field of monocrystalline silicon growth equipment. The monocrystalline silicon furnace system comprises a main furnace chamber, an auxiliary furnace chamber, a material supply device and a flow guide device, and the flow guide device is arranged between the main furnace chamber and the auxiliary furnace chamber and used for guiding a target-state silicon material contained in the auxiliary furnace chamber into the main furnace chamber; the crystal pulling device is arranged above the main furnace chamber, and the plurality of measuring devices are used for measuring process parameters; and the control device correspondingly controls the main furnace chamber, the auxiliary furnace chamber, the material supply device, the flow guide device and the crystal pulling device based on process parameters. The target-state silicon material contained in the auxiliary furnace chamber is continuously guided into the main furnace chamber through the guide device, so that the crystal pulling length of the crystal pulling device is effectively increased, and the production efficiency is improved.

Description

Technical Field

[0001] This application relates to the technical field of single-crystal silicon growth equipment, and more particularly, to a single-crystal silicon furnace system. Background Art

[0002] The working principle of a single-crystal silicon furnace is as follows: Silicon materials are put into a crucible located in a sealed furnace chamber. The main furnace chamber is evacuated to a vacuum by a vacuum pump and then continuously filled with a protective gas, chlorine gas, to maintain the furnace pressure at 1300 - 2600 Pa. Subsequently, the crucible is heated to heat and melt the silicon materials into a molten state. A single-crystal silicon seed crystal is lowered from above the crucible to the liquid surface and made to contact the liquid surface through a wire rope. During the slow cooling process of the silicon materials in the crucible, the seed crystal is controlled to perform lifting and rotating movements simultaneously, so that the newly precipitated crystalline silicon melt continuously grows around the seed crystal and finally grows into a cylindrical silicon rod.

[0003] In the prior art, the length of the obtained silicon rod is limited by the capacity of the crucible. When the molten silicon materials in the crucible are consumed, it is necessary to re-perform the processes of adding silicon materials to the crucible, evacuating and pressurizing the furnace, heating and melting the silicon materials, and crystal pulling. This not only may have an adverse impact on the consistency of the silicon rod parameters but also seriously reduces production efficiency. Summary of the Utility Model

[0004] The purpose of this application is to provide a single-crystal silicon furnace system that can increase the crystal pulling length and improve production efficiency.

[0005] The embodiments of this application are implemented as follows:

[0006] The embodiments of this application provide a single-crystal silicon furnace system, including:

[0007] A main furnace chamber for melting silicon materials in an initial state into silicon materials in a target state and accommodating the silicon materials in the target state;

[0008] A secondary furnace chamber for melting silicon materials in an initial state into silicon materials in a target state and accommodating the silicon materials in the target state;

[0009] A diversion device disposed between the main furnace chamber and the secondary furnace chamber for diverting the silicon materials in the target state accommodated in the secondary furnace chamber into the main furnace chamber;

[0010] A crystal pulling device disposed above the main furnace chamber for performing crystal pulling on the silicon materials in the target state accommodated in the main furnace chamber to obtain a silicon rod;

[0011] A plurality of measuring devices respectively disposed at preset positions of the main furnace chamber, the secondary furnace chamber, the diversion device, and the crystal pulling device for measuring process parameters;

[0012] A material supply device for adding the silicon material in the initial state to the main furnace chamber and the auxiliary furnace chamber respectively;

[0013] A control device for receiving the process parameters and correspondingly controlling the main furnace chamber, the auxiliary furnace chamber, the material supply device, the diversion device and the crystal pulling device;

[0014] Wherein, the process parameters include:

[0015] The phase state and quality of the silicon material in the initial state;

[0016] The phase state, liquid level and flow rate of the silicon material in the target state;

[0017] The quality of the silicon rod.

[0018] Optionally, as an implementable manner, the control device includes:

[0019] A data receiver configured to receive the process parameters;

[0020] A data processor configured to generate a control instruction according to the process parameters;

[0021] An instruction transmitter configured to transmit the control instruction to the corresponding device.

[0022] Optionally, as an implementable manner, the material supply device is configured to add the silicon material in the initial state with a preset quality to the main furnace chamber and / or the auxiliary furnace chamber under the control of the control device.

[0023] Optionally, as an implementable manner, the phase state of the silicon material in the initial state includes: block and / or powder; the phase state of the silicon material in the target state includes: fluid and / or semi-fluid; the diversion device includes: a diversion pipe and a heating unit; wherein, the inlet of the diversion pipe is arranged at a first preset position in the auxiliary furnace chamber, the outlet of the diversion pipe is arranged at a second preset position in the main furnace chamber, and the horizontal height of the first preset position is higher than the horizontal height of the second preset position;

[0024] The heating unit at least partially surrounds the diversion pipe and is configured to heat and maintain the phase state of the silicon material in the target state.

[0025] Optionally, as an implementable manner, the process parameters include: the quality information of the silicon rod; the measuring device includes: a quality sensor for measuring the quality information of the silicon rod and transmitting the quality information to the control device; correspondingly, the control device controls the crystal pulling rate of the crystal pulling device according to the quality information.

[0026] Optionally, as an implementable manner, the process parameters further include: the phase state information and liquid level information of the silicon material in the target state in the main furnace chamber; and the phase state information and liquid level information of the silicon material in the target state in the secondary furnace chamber; the measuring device further includes: at least two phase state sensors for respectively determining the phase state information of the silicon material in the target state in the main furnace chamber and the secondary furnace chamber, and transmitting the phase state information to the control device; and at least two liquid level sensors for respectively measuring the liquid level information of the silicon material in the target state in the main furnace chamber and the secondary furnace chamber, and transmitting the liquid level information to the control device; correspondingly, the control device controls the diversion device to divert the silicon material in the target state in the secondary furnace chamber to the main furnace chamber according to the phase state information and the liquid level information; and controls the material supply device to add the silicon material in the initial state to the main furnace chamber and / or the secondary furnace chamber.

[0027] Optionally, as an implementable manner, the process parameters further include: the flow rate information of the silicon material in the target state flowing through the diversion device; the measuring device further includes: a flow sensor for measuring the flow rate information of the silicon material in the target state flowing through the diversion device, and transmitting the flow rate information to the control device; correspondingly, a control valve is further provided in the diversion device, and the control device controls the control valve to perform on / off and / or flow rate adjustment actions according to the flow rate information to control the flow rate of the silicon material in the target state passing through the diversion device.

[0028] Optionally, as an implementable manner, the material supply device includes: a storage bin configured to store the silicon material in the initial state; a material conveying assembly configured to add the silicon material in the initial state to the main furnace chamber and / or the secondary furnace chamber in response to the control device.

[0029] Optionally, as an implementable manner, the process parameters further include: the flow rate information of the silicon material in the target state flowing through the diversion device; the measuring device further includes: a flow sensor for measuring the flow rate information of the silicon material in the target state flowing through the diversion device, and transmitting the flow rate information to the control device; correspondingly, a control valve is further provided in the diversion device, and the control device controls the control valve to perform on / off and / or flow rate adjustment actions according to the flow rate information to control the flow rate of the silicon material in the target state passing through the diversion device.

[0030] Optionally, as an implementable manner, the main furnace chamber includes: a main crucible and a main heater disposed around the outer periphery of the main crucible;

[0031] The secondary furnace chamber includes: a secondary crucible and a secondary heater disposed around the outer periphery of the secondary crucible;

[0032] Correspondingly, the inlet of the diversion tube is connected to the auxiliary crucible, and the outlet is connected to the main crucible, continuously diverting the target-state silicon material contained in the auxiliary crucible into the main crucible.

[0033] Optionally, as an implementable manner, the crystal pulling device includes a crystal pulling chamber, in which a crystal pulling rope and a seed crystal connected to the distal end of the crystal pulling rope are arranged, and the seed crystal extends into the main furnace chamber through above the main furnace chamber.

[0034] The beneficial effects of the embodiments of the present application include:

[0035] The single-crystal silicon furnace system provided by the present application includes: a main furnace chamber, an auxiliary furnace chamber, a material supply device, a diversion device, a crystal pulling device, a plurality of measurement devices, and a control device. When using the single-crystal silicon furnace system of the present application to pull a crystal rod, the material supply device first adds the initial-state silicon material into the main furnace chamber and the auxiliary furnace chamber respectively. The main furnace chamber and the auxiliary furnace chamber heat and melt the initial-state silicon material in their respective chambers into the target-state silicon material, and the crystal pulling device performs crystal pulling treatment on the target-state silicon material in the main furnace chamber to obtain a silicon rod; among them, a plurality of measurement devices measure the parameters of the mass, phase state, liquid level, and flow rate of the initial-state silicon material, the target-state silicon material, and the silicon rod, and transmit the measurement parameters to the control device, and respectively control the main furnace chamber, the auxiliary furnace chamber, the material supply device, the diversion device, and the crystal pulling device to perform operations through the control device. Specifically, after the measurement device detects that the target-state silicon material in the main furnace chamber is consumed to a certain threshold amount, the control device controls to transfer a preset amount of the target-state silicon material in the auxiliary furnace chamber to the main furnace chamber through the diversion device, and smoothly fuse it with the remaining target-state silicon material in the main furnace chamber, so as to avoid adverse interference to the main furnace chamber and ensure the continuous progress of the crystal pulling treatment; when the measurement device detects that the remaining target-state silicon material in the auxiliary furnace chamber is insufficient to meet the next replenishment cycle or has been completely consumed, the control device controls the material supply device to add the initial target silicon material into the auxiliary furnace chamber and continue to perform heating and melting treatment to obtain a new target-state silicon material; the auxiliary furnace chamber also temporarily accommodates the target-state silicon material to respond to the continuous material replenishment of the main furnace chamber in subsequent processes, so as to ensure that the crystal pulling device can continuously perform crystal pulling treatment within a preset production cycle without being forced to stop due to material replenishment during the process. In this way, the single-crystal silicon furnace system provided by this embodiment can effectively increase the crystal pulling length of the crystal pulling device and improve production efficiency. Description of the Drawings

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative efforts.

[0037] Figure 1 This is a schematic diagram of the composition of a single crystal furnace system provided in some embodiments of the present application;

[0038] Figure 2 This is a schematic diagram of the structure of a single crystal furnace system provided in some embodiments of the present application;

[0039] Figure 3 This is a schematic diagram of the composition of a control device provided in some embodiments of the present application.

[0040] Explanation of reference numerals:

[0041] 100 - single crystal furnace system; 110 - main furnace chamber; 111 - main crucible; 112 - main heater; 120 - sub - furnace chamber; 121 - sub - crucible; 122 - sub - heater; 130 - crystal pulling device; 140 - flow guiding device; 150 - material supply device; 151 - storage bin; 152 - material conveying component; 160 - control device; 161 - data receiver; 162 - data processor; 163 - instruction transmitter. Detailed implementation manners

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Usually, the components of the embodiments of the present application described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0043] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application claimed, but merely represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts fall within the scope of protection of the present application.

[0044] It should be noted that: similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. In addition, the terms "first", "second", "third", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0045] In the description of the present application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "installed", "connected", and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0046] Please refer to Figure 1 and Figure 2 , this embodiment provides a single crystal furnace system 100, including:

[0047] A main furnace chamber 110 for melting the silicon material in the initial state to the silicon material in the target state and accommodating the silicon material in the target state;

[0048] A sub-furnace chamber 120 for melting the silicon material in the initial state to the silicon material in the target state and accommodating the silicon material in the target state;

[0049] A diversion device 140 is arranged between the main furnace chamber 110 and the sub-furnace chamber 120, and is used for diverting the silicon material in the target state accommodated in the sub-furnace chamber 120 into the main furnace chamber 110;

[0050] A crystal pulling device 130 is arranged in the main furnace chamber 110, and is used for performing crystal pulling treatment on the silicon material in the target state accommodated in the main furnace chamber 110 to obtain a silicon rod;

[0051] A plurality of measuring devices are respectively arranged at preset positions of the main furnace chamber 110, the sub-furnace chamber 120, the diversion device 140 and the crystal pulling device 130, and are used for measuring process parameters;

[0052] A material supply device 150 is used for adding the silicon material in the initial state to the main furnace chamber 110 and the sub-furnace chamber 120 respectively;

[0053] A control device 160 is configured to: correspondingly control the main furnace chamber 110, the sub-furnace chamber 120, the material supply device 150, the diversion device 140 and the crystal pulling device 130 based on the process parameters;

[0054] Among them, the process parameters include:

[0055] The phase state and quality of the silicon material in the initial state;

[0056] The phase state, liquid level and flow rate of the silicon material in the target state;

[0057] The quality of the silicon rod.

[0058] When pulling a crystal rod using the single-crystal silicon furnace system 100 of the present application, the material supply device 150 first adds silicon materials in an initial state to the main furnace chamber 110 and the auxiliary furnace chamber 120 respectively. The main furnace chamber 110 and the auxiliary furnace chamber 120 heat and melt the silicon materials in their chambers in the initial state to silicon materials in a target state respectively. The crystal pulling device 130 performs crystal pulling on the silicon materials in the target state in the main furnace chamber 110 to obtain a silicon rod. Among them, multiple measuring devices measure parameters such as the mass, phase state, liquid level, and flow rate of the silicon materials in the initial state, the silicon materials in the target state, and the silicon rod, and transmit the measured parameters to the control device 160, and respectively control the main furnace chamber 110, the auxiliary furnace chamber 120, the material supply device 150, the diversion device 140, and the crystal pulling device 130 to perform operations through the control device 160. Specifically, after the measuring device detects that the silicon materials in the target state in the main furnace chamber 110 are consumed to a certain threshold amount, the control device 160 controls a preset amount of the silicon materials in the target state in the auxiliary furnace chamber 120 to be transmitted to the main furnace chamber 110 through the diversion device 140, and smoothly fuse with the remaining silicon materials in the target state in the main furnace chamber 110, avoiding adverse interference to the main furnace chamber 110 and ensuring the continuous progress of the crystal pulling process. When the measuring device detects that the remaining silicon materials in the target state in the auxiliary furnace chamber 120 are insufficient to meet the next replenishment cycle or have been completely consumed, the control device 160 controls the material supply device 150 to add silicon materials in the initial target state to the auxiliary furnace chamber 120 and continue the heating and melting process to obtain new silicon materials in the target state. The auxiliary furnace chamber 120 also temporarily accommodates the silicon materials in the target state to continuously replenish the main furnace chamber 110 in response to the control device 160 in subsequent processes, so as to ensure that the crystal pulling device 130 can continuously perform crystal pulling within a preset production cycle without being forced to stop due to material replenishment during the process. In this way, the single-crystal silicon furnace system 100 provided in this embodiment can effectively increase the crystal pulling length of the crystal pulling device 130 and improve production efficiency.

[0059] In some embodiments, the phase state of the silicon materials in the initial state includes: blocky and / or powdery; for example, the silicon materials in the initial state include: blocky polysilicon or powdery polysilicon.

[0060] In some embodiments, the phase state of the silicon materials in the target state includes: fluid and / or semi-fluid; for example, the silicon materials in the target state include: polysilicon liquid.

[0061] Please continue to refer to Figure 1 , in some embodiments, the main furnace chamber 110 includes: a main crucible 111 and a main heater 112 disposed around the outer periphery of the main crucible 111. For example, the main heater 112 may include: a quartz tube heater and / or an electromagnetic induction heater.

[0062] The auxiliary furnace chamber 120 includes: an auxiliary crucible 121 and an auxiliary heater 122 disposed around the outer periphery of the auxiliary crucible 121. Exemplarily, the auxiliary heater 122 may include: a quartz tube heater and / or an electromagnetic induction heater.

[0063] In some embodiments, a crystal pulling device 130 is disposed above the main furnace chamber 110 to perform crystal pulling on the silicon material in the target state in the main furnace chamber 110 to obtain a silicon rod.

[0064] In some embodiments, both the main furnace chamber 110 and the auxiliary furnace chamber 120 are connected to the material supply device 150, so that the material supply device 150 can add silicon material in the initial state to the main furnace chamber 110 and / or the auxiliary furnace chamber 120.

[0065] In some embodiments, a diversion device 140 is disposed between the main furnace chamber 110 and the auxiliary furnace chamber 120, and the silicon material in the target state in the auxiliary furnace chamber 120 can be supplemented into the main furnace chamber 110 through the diversion device 140.

[0066] In some embodiments, the horizontal height of the auxiliary furnace chamber 120 is higher than the horizontal height of the main furnace chamber 110.

[0067] In some embodiments, the measuring device includes: a mass sensor, a liquid level sensor, a phase state sensor, and a flow sensor. Each of the above sensors is respectively arranged at preset positions of the main furnace chamber 110, the auxiliary furnace chamber 120, the diversion device 140, and the crystal pulling device 130 to measure process parameters.

[0068] In some embodiments, the process parameters include: the phase state and mass of the silicon material in the initial state; the phase state, liquid level, and flow rate of the silicon material in the target state; and the mass of the silicon rod.

[0069] In some embodiments, the mass sensor is disposed at a preset position of the crystal pulling device 130 to measure the mass information of the obtained silicon rod and transmit the mass information to the control device; correspondingly, the control device 160 controls the crystal pulling rate of the crystal pulling device 130 according to the mass information.

[0070] In some embodiments, a plurality of liquid level sensors are respectively disposed in the main furnace chamber 110 and the auxiliary furnace chamber 120 (such as the side walls and / or bottoms of the main crucible 111 and the auxiliary crucible 121) to measure the liquid level positions of the silicon material in the target state in the main crucible 111 and the auxiliary crucible 121. Exemplarily, the liquid level sensor includes: one or more of a capacitive liquid level sensor, an ultrasonic liquid level sensor, and a static pressure liquid level sensor.

[0071] In some embodiments, the phase state sensors are respectively disposed at preset positions on the main crucible 111, the auxiliary crucible 121, and the diversion device 140 to measure the phase state of the silicon material in the target state. Exemplarily, the phase state sensors include one or more of: a photoelectric measurement sensor, a contact sensor, and an ultrasonic sensor.

[0072] In some embodiments, the control device 160 controls the diversion device 140 to divert the silicon material in the target state in the auxiliary furnace chamber 120 into the main furnace chamber 110 according to the phase state information and the liquid level information; and controls the material supply device 150 to add the silicon material in the initial state into the main furnace chamber 110 and / or the auxiliary furnace chamber 120.

[0073] In some embodiments, the flow sensor is disposed at a preset position on the diversion device 140 to measure the flow rate of the silicon material in the target state passing through the diversion device 140. Exemplarily, the flow sensor includes one or more of: a Hall flowmeter, a photoelectric flowmeter, and an electromagnetic flowmeter. Correspondingly, a control valve is further disposed in the diversion device 140, and the control device 160 controls the control valve to perform on / off and / or flow rate adjustment actions according to the flow information to control the flow rate of the silicon material in the target state passing through the diversion device 140. Exemplarily, the control valve includes: a manual regulating valve or a solenoid valve.

[0074] Please refer to Figure 3 , in some embodiments, the control device 160 includes: a data receiver 161, a data processor 162, and an instruction transmitter 163; wherein, the data receiver 161 is used to receive process parameters; the data processor 162 is used to generate control instructions according to the process parameters; the instruction transmitter 163 is used to transmit the control instructions to the corresponding device.

[0075] In some embodiments, the data receiver 161 includes one or more of: a wired gateway, a wireless gateway, and an I / O interface.

[0076] In some embodiments, the data processor 162 includes one or more of: a central processing unit (CPU), a graphics processing unit (GPU), and a digital signal processor (DSP).

[0077] In some embodiments, the instruction transmitter 163 includes one or more of: a data bus, an address bus, and a data switch.

[0078] When pulling a crystal rod using the single-crystal furnace system 100 of the present application, the aforementioned quality sensor, liquid level sensor, phase state sensor, liquid level sensor, and flow sensor respectively detect the corresponding process parameters and transmit them to the data receiver, and the data processor generates a control instruction according to the received process parameters; the instruction transmitter transmits the control instruction to the corresponding device, such as controlling the material supply device 150 to convey the silicon material in the initial state to the main furnace chamber 110 and / or the auxiliary furnace chamber 120 respectively according to the control instruction, heating and melting the silicon material in the initial state in the main furnace chamber 110 and the auxiliary furnace chamber 120 into the silicon material in the target state, and then controlling the crystal pulling device 130 to continuously perform crystal pulling on the silicon material in the target state placed in the main furnace chamber 110 and flowing from the auxiliary furnace chamber 120; according to the measured quality of the silicon rod and the liquid level information of the silicon material in the target state in the main furnace chamber 110, timely control the transfer of the silicon material in the target state in the auxiliary furnace chamber 120 to the main furnace chamber 110 through the diversion device 140 and smoothly merge it with the remaining silicon material in the target state in the main furnace chamber 110; when the remaining silicon material in the target state in the auxiliary furnace chamber 120 is insufficient to meet the next replenishment cycle or has been completely consumed, control the material supply device 150 to add the initial target silicon material to the auxiliary furnace chamber 120 to continue heating and melting to obtain the new silicon material in the target state and replenish the main furnace chamber 110 in the subsequent process to ensure that the crystal pulling device 130 can continuously perform crystal pulling within the preset production cycle.

[0079] In some embodiments, the diversion device 140 includes: a diversion pipe and a heating unit; wherein, the inlet of the diversion pipe is arranged at a first preset position in the auxiliary furnace chamber 120, the outlet of the diversion pipe is arranged at a second preset position in the main furnace chamber 110, and the horizontal height of the first preset position is higher than the horizontal height of the second preset position; the heating unit at least partially surrounds the diversion pipe and is used to heat and maintain the phase state of the silicon material in the target state.

[0080] In some embodiments, the inlet of the diversion pipe is connected to the auxiliary crucible 121, and the outlet is connected to the main crucible 111. The silicon material in the target state contained in the auxiliary crucible 121 can be continuously diverted into the main crucible 111 under the action of gravity and / or an external driving force.

[0081] In some embodiments, the heating unit includes: a quartz tube heater and / or an electromagnetic induction heater.

[0082] In the embodiments of the present application, by providing a diversion device 140 including a diversion tube and a heating unit, the target-state silicon material diverted from the sub-crucible 121 is heated during the transfer process, so as to facilitate maintaining its phase state, and thus can be smoothly fused with the remaining target-state silicon material in the main crucible 111, avoiding adverse effects on the crystal pulling process. Moreover, a flow sensor and a control valve are also provided in the diversion device 140 to accurately control the flow rate of the target-state silicon material flowing through the diversion tube, and further accurately control the crystal pulling process.

[0083] Please continue to refer to Figure 1 and Figure 2 In some embodiments, the material supply device 150 includes: a storage bin 151 and a material conveying assembly 152; wherein, the storage bin 151 is used to store the silicon material in the initial state; the material conveying assembly 152 is used to convey the silicon material in the initial state into the main crucible 111 and / or the sub-crucible 121.

[0084] In some embodiments, the number of the material conveying assemblies 152 is at least two, which are respectively connected to the main furnace chamber 110 and the sub-furnace chamber 120. Exemplarily, the material conveying assembly 152 includes: one or more of a belt conveyor, a roller conveyor, a screw conveyor, and a chain conveyor.

[0085] In some embodiments, the material conveying assembly 152 can convey the silicon material in the initial state to the main furnace chamber 110 and / or the sub-furnace chamber 120 in response to the control device. For example, at the beginning of the production shift, a preset amount of the silicon material in the initial state is conveyed into the main furnace chamber 110 and the sub-furnace chamber 120 respectively; when the main furnace chamber 110 can stably pull a crystal, the conveyance of the silicon material in the initial state into the main furnace chamber 110 is stopped; when the target-state silicon material in the sub-furnace chamber 120 is insufficient, the silicon material in the initial state is conveyed into the sub-furnace chamber 120.

[0086] In some embodiments, an airtight partition door is provided between the material conveying assembly 152 and the main furnace chamber 110 to maintain the relative airtightness of the main furnace chamber 110 during non-material transmission.

[0087] In some embodiments, an airtight partition door is provided between the material conveying assembly 152 and the sub-furnace chamber 120 to maintain the relative airtightness of the sub-furnace chamber 120 during non-material transmission.

[0088] In some embodiments, the crystal pulling device 130 includes a crystal pulling chamber, in which a crystal pulling rope and a seed crystal connected to the distal end of the crystal pulling rope are provided, and the seed crystal extends into the main crucible 111 through above the main furnace chamber 110.

[0089] Hereinafter, the present application provides some specific embodiments to completely illustrate the solution of the present application. It should be noted that the following specific embodiments are only some possible implementation manners and do not constitute a limitation on the solution of the present application.

[0090] In some embodiments, a provided single-crystal silicon furnace system 100 includes: a main furnace chamber 110, a secondary furnace chamber 120, a material supply device 150, a flow guiding device 140, a crystal pulling device 130, a plurality of measuring devices, and a control device 160. Among them, the main furnace chamber 110 includes: a main crucible 111 and a main heater 112 (such as a quartz tube heater) disposed around the outer periphery of the main crucible 111; the secondary furnace chamber 120 includes: a secondary crucible 121 and a secondary heater 122 (such as a quartz tube heater) disposed around the outer periphery of the secondary crucible 121.

[0091] The crystal pulling device 130 is disposed in the main furnace chamber 110 and specifically includes a crystal pulling chamber. A crystal pulling rope and a seed crystal connected to the distal end of the crystal pulling rope are disposed in the crystal pulling chamber. The seed crystal extends into the main crucible 111 through above the main furnace chamber 110.

[0092] The flow guiding device 140 is disposed between the main furnace chamber 110 and the secondary furnace chamber 120 and specifically includes: a flow guiding tube and a heating unit. Among them, the inlet of the flow guiding tube is connected to the secondary crucible 121, and the outlet is connected to the main crucible 111; a flow meter and a solenoid valve are disposed on the flow guiding tube; the heating unit includes a quartz tube heater at least partially disposed around the flow guiding tube.

[0093] The material supply device 150 includes: a storage bin 151 and a material conveying assembly 152. The material conveying assembly 152 is two chain plate conveyors, respectively connected to the main furnace chamber 110 and the secondary furnace chamber 120; airtight partition doors are also disposed between the material conveying assembly 152 and the main furnace chamber 110 and the secondary furnace chamber 120.

[0094] The measuring devices include: a mass sensor, a liquid level sensor, a phase state sensor, and a flow sensor. The mass sensor is disposed at a preset position of the crystal pulling device 130 to measure the mass of the obtained silicon rod. A plurality of capacitive liquid level sensors are respectively disposed in the main furnace chamber 110 and the secondary furnace chamber 120 (such as on the side walls and / or bottoms of the main crucible 111 and the secondary crucible 121) to measure the liquid level positions of the silicon materials in the target state in the main crucible 111 and the secondary crucible 121. A plurality of photoelectric measurement sensors are respectively disposed at preset positions on the main crucible 111, the secondary crucible 121, and the flow guiding device 140 to measure the phase states of the silicon materials in the target state. A Hall flow meter is disposed at a preset position on the flow guiding device 140 to measure the flow rate of the silicon materials in the target state passing through the flow guiding device 140.

[0095] The control device 160 includes: a data receiver 161, a data processor 162, and an instruction transmitter 163; among them, the data receiver 161 (such as a wired gateway) is used to receive process parameters; the data processor 162 (such as a central processing unit) is used to generate control instructions according to the process parameters; the instruction transmitter 163 (such as a data bus) is used to transmit the control instructions to the corresponding devices.

[0096] When using the single crystal silicon furnace system 100 of the present application to pull crystal rods, the chain conveyor first adds a preset amount of initial state silicon material (e.g., block silicon material) into the main crucible 111 and the auxiliary crucible 121; the quartz tube heater heats and melts the initial state silicon material in the main crucible 111 and the auxiliary crucible 121 into target state silicon material (e.g., silicon liquid), and the crystal pulling device 130, under the control of the control device 160, lowers the seed crystal to contact the liquid surface of the main crucible 111, and performs pulling and rotation movements, so that the crystalline silicon melt precipitated in the main crucible 111 continues to grow around the seed crystal, and finally grows into a cylindrical silicon rod. During the process, the phase state sensor measures the phase state data of the target state silicon material in the main crucible 111 and the auxiliary crucible 121; the liquid level sensor measures the liquid level position of the target state silicon material in the main crucible 111 and the auxiliary crucible 121; the quality sensor measures the quality data of the obtained silicon rod; the control device 160 further controls based on the above-mentioned measurement data: after the target state silicon material in the main furnace chamber 110 is consumed to a certain threshold amount, the control device controls the preset amount of target state silicon material in the auxiliary furnace chamber 120 to be transmitted to the main furnace chamber 110 through the guide device 140, and is connected to the main furnace chamber 110. The remaining silicon material in the target state in 110 is smoothly integrated, avoiding adverse interference to the main furnace chamber 110 and ensuring the continuation of the crystal pulling process; when the silicon material in the target state remaining in the auxiliary furnace chamber 120 is insufficient to meet the next replenishment cycle or has been completely consumed, the control device controls the material supply device 150 to add the initial target silicon material to the auxiliary furnace chamber 120 to continue heating and melting treatment to obtain new silicon material in the target state; and in the subsequent process, the main furnace chamber 110 is continuously replenished with silicon material in the target state to ensure that the crystal pulling device 130 can continue to perform the crystal pulling process within the preset production cycle.

[0097] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A single crystal silicon furnace system, characterized in that: include: A main furnace chamber, used for melting silicon material in an initial state into silicon material in a target state and accommodating the silicon material in the target state; The auxiliary furnace chamber is used to melt the silicon material in the initial state into the silicon material in the target state and to accommodate the silicon material in the target state; A flow guide device is disposed between the main furnace chamber and the auxiliary furnace chamber, and is used to guide the silicon material in the target state contained in the auxiliary furnace chamber into the main furnace chamber; A crystal pulling device, disposed above the main furnace chamber, for performing a crystal pulling process on the target silicon material contained in the main furnace chamber to obtain a silicon rod; A plurality of measuring devices are respectively arranged at preset positions of the main furnace chamber, the auxiliary furnace chamber, the flow guide device and the crystal pulling device, and are used to measure process parameters; A material supply device, used for adding the initial state silicon material to the main furnace chamber and the auxiliary furnace chamber respectively; A control device configured to: correspondingly control the main furnace chamber, the auxiliary furnace chamber, the material supply device, the flow guide device and the crystal pulling device based on the process parameters; Wherein, the process parameters include: The physical state and quality of the silicon material in the initial state; The phase state, liquid level and flow rate of the target silicon material; The quality of the silicon rods.

2. The single crystal silicon furnace system according to claim 1, characterized in that: The control device comprises: A data receiver is configured to: receive the process parameters; A data processor is configured to: generate a control instruction according to the process parameters; The instruction transmitter is configured to transmit the control instruction to the corresponding device.

3. The single crystal silicon furnace system according to claim 1, characterized in that: The material supply device is configured to add a preset mass of the initial-state silicon material to the main furnace chamber and / or the auxiliary furnace chamber under the control of the control device.

4. The single crystal silicon furnace system according to claim 1, characterized in that: The physical state of the silicon material in the initial state includes: block and / or powder; the physical state of the silicon material in the target state includes: fluid and / or semi-fluid; The flow guiding device comprises: a flow guiding pipe and a heating unit; wherein, The inlet of the guide pipe is arranged at a first preset position in the auxiliary furnace chamber, and the outlet of the guide pipe is arranged at a second preset position in the main furnace chamber, and the horizontal height of the first preset position is higher than the horizontal height of the second preset position; The heating unit is at least partially disposed around the flow guide tube, and is configured to heat and maintain the physical phase state of the silicon material in the target state.

5. The single crystal silicon furnace system according to claim 2, characterized in that: The process parameters include: quality information of the silicon rod; The measuring device comprises: a quality sensor for measuring the quality information of the silicon rod and transmitting the quality information to the control device; correspondingly, The control device controls the crystal pulling rate of the crystal pulling device according to the quality information.

6. The single crystal silicon furnace system according to claim 2, characterized in that: The process parameters include: the physical phase state information and liquid level information of the silicon material in the target state in the main furnace chamber; and the physical phase state information and liquid level information of the silicon material in the target state in the auxiliary furnace chamber; The measuring device comprises: At least two phase state sensors, used to respectively determine the phase state information of the silicon material in the target state in the main furnace chamber and the auxiliary furnace chamber, and transmit the phase state information to the control device; and at least two liquid level sensors, used to measure the liquid level information of the silicon material in the target state in the main furnace chamber and the auxiliary furnace chamber respectively, and transmit the liquid level information to the control device, Correspondingly, The control device controls the diversion device to divert the target state silicon material in the auxiliary furnace chamber into the main furnace chamber according to the phase state information and the liquid level information; and controls the material supply device to add the initial state silicon material into the main furnace chamber and / or the auxiliary furnace chamber.

7. The single crystal silicon furnace system according to claim 2, characterized in that: The process parameters include: flow information of the silicon material in the target state flowing through the flow guiding device; The measuring device comprises: a flow sensor, which is used to measure the flow information of the silicon material in the target state flowing through the flow guide device, and transmit the flow information to the control device; Correspondingly, a control valve is also provided in the flow guiding device, and the control device controls the control valve to perform on-off and / or flow rate adjustment actions according to the flow information, so as to control the flow of the silicon material in the target state passing through the flow guiding device.

8. The single crystal silicon furnace system according to claim 1, characterized in that: The material supply device comprises: A material storage bin is configured to: store the silicon material in the initial state; The material conveying component is configured to add the initial silicon material into the main furnace chamber and / or the auxiliary furnace chamber in response to the control device.

9. The single crystal silicon furnace system according to claim 4, characterized in that: The main furnace chamber comprises: a main crucible and a main heater arranged around the outer periphery of the main crucible; The auxiliary furnace chamber comprises: an auxiliary crucible and an auxiliary heater arranged around the outer periphery of the auxiliary crucible; Correspondingly, the inlet of the guide tube is connected to the auxiliary crucible, and the outlet is connected to the main crucible, so that the silicon material in the target state contained in the auxiliary crucible is continuously guided into the main crucible.

10. The single crystal silicon furnace system according to any one of claims 1 to 9, characterized in that: The crystal pulling device includes a crystal pulling chamber located above the main furnace chamber. A crystal pulling rope and a seed crystal connected to the far end of the crystal pulling rope are arranged in the crystal pulling chamber. The seed crystal passes through the top of the main furnace chamber and extends into the main furnace chamber.

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