Quasi-carbon nanotube structure

Abstract

The quasi-carbon nanotube structure comprises a carbon nanotube with the diameter of 0.8-30 nanometers or a carbon nano strip with the initial width of 1-100 nanometers, the carbon nanotube is cut to form axial linear defects, and the carbon nano strip is curled to form the quasi-carbon nanotube with the axial linear defects; wherein the linear defect realizes regulation and control of chirality and band gap width, so that a semiconductor chiral carbon nanostructure is converted into a metallic carbon nanostructure. The utility model provides a simple, efficient and easy-to-control structure scheme to regulate and control the conductivity of the carbon nanotube. Under the condition that the chirality of the initial carbon nano tube is not required, the conversion of the carbon nano tube from the semiconducting property to the metallic property is realized by introducing the axial linear defect, and the band gap width of the carbon nano tube is effectively regulated and controlled. The conductivity of the carbon nano tube is remarkably improved by introducing a degenerate state of linear defects.

Description

Technical Field

[0001] The utility model relates to the field of carbon nanotubes, and particularly to a quasi-carbon nanotube structure. Background Art

[0002] Due to its high specific surface area and special structure, carbon nanotubes have a wide range of applications in the fields of electronic devices, energy storage materials, contact coupling, etc. Carbon nanotubes can be divided into metallic and semiconducting carbon nanotubes according to their structure and chirality (i.e., the arrangement of carbon atoms on the tube wall). Metallic carbon nanotubes exhibit electrical conductivity, while semiconducting carbon nanotubes exhibit semiconductor properties. However, due to the complexity and uncertainty of their growth process, there are still many technical problems in realizing the efficient and controllable growth of carbon nanotubes with specific chirality, and there is still a very great challenge in controlling the electrical conductivity of carbon nanotubes at present. At present, the control of the electrical conductivity of carbon nanotubes mainly focuses on purification of chirality and doping methods. The purification separation methods include molecular recognition technology, density gradient centrifugation method, cross electric field method, selective chemical reaction method, etc. The chemical doping method is to introduce dopants (such as nitrogen, boron, metal atoms, surface functional groups, etc.) into carbon nanotubes, which can change their electronic structure and thus regulate their electrical conductivity. The purification of chirality and doping methods generally have problems such as cumbersome steps and poor controllability. Therefore, there is an urgent need to obtain a simple, efficient and easy-to-control scheme to regulate the electronic properties of carbon nanotubes.

[0003] It should be noted that the information disclosed in the above background art section is only used for understanding the background of the present application, and therefore may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Utility Model

[0004] The main object of the present utility model is to overcome the defects of the above background art and provide a quasi-carbon nanotube structure.

[0005] To achieve the above object, the present utility model adopts the following technical solutions:

[0006] A quasi-carbon nanotube structure includes a carbon nanotube, and an axial linear defect is formed by cutting on the carbon nanotube; wherein, the linear defect realizes the regulation of chirality and bandgap width, so that the semiconducting chiral carbon nanotube structure is transformed into a metallic carbon nanotube structure.

[0007] Further, the diameter of the carbon nanotube is 0.8 to 30 nanometers.

[0008] A quasi-carbon nanotube structure includes a carbon nanotube strip, and the carbon nanotube strip is curled to form a quasi-carbon nanotube containing an axial linear defect; wherein, the linear defect realizes the regulation of chirality and bandgap width, so that the semiconducting chiral carbon nanotube structure is transformed into a metallic carbon nanotube structure.

[0009] Furthermore, the initial width of the carbon nanotape is 1 to 100 nanometers.

[0010] The utility model has the following beneficial effects:

[0011] The utility model provides an innovative quasi-carbon nanotube structure, which breaks through the limitations of traditional technologies and provides a simple, efficient and easy-to-control structural solution to regulate and enhance the electrical conductivity of carbon nanotubes. Without requiring the chirality of the initial carbon nanotubes, the utility model can introduce axial linear defects to achieve the transformation of carbon nanotubes from semiconducting to metallic, effectively regulate their bandgap widths and enhance their electrical conductivity. This transformation is applicable not only to armchair, zigzag and other carbon nanotubes in any chiral state, but also significantly improves the electrical conductivity of carbon nanotubes through the degenerate state of the introduced linear defects. The utility model provides quasi-carbon nanotube structures and coiled nanotape structures with high electrical conductivity, which are applied to carbon nanotube antennas and their arrays in bands from microwave and millimeter wave to terahertz, effectively solving the problems of their low electrical conductivity and high impedance matching.

[0012] The remarkable advantages of the utility model also lie in the flexibility and compatibility of its implementation method, which can be combined with a variety of existing manufacturing processes without significant changes to the production process, thus contributing to large-scale application and production. In addition, the structural change of the quasi-carbon nanotube after introducing linear defects is small, which helps to maintain its excellent electrical conductivity for a long time and reduce the performance degradation during use. Importantly, the utility model simplifies the regulation process without considering the chirality of carbon nanotubes, which is of great significance for improving production efficiency and reducing costs. Generally speaking, the utility model not only improves the electrical conductivity and field emission performance of carbon nanotubes, but also provides a new mechanism and means for regulating the electronic properties of carbon nanotubes.

[0013] Compared with the current technology, the utility model has the following advantages and outstanding effects:

[0014] 1) Compared with the current technology, the implementation method of the utility model is flexible, compatible with a variety of manufacturing processes, does not require significant changes to the production process, and helps with large-scale application and production.

[0015] 2) Once linear defects are introduced, the structural change of carbon nanotubes is small, and their electrical conductivity can be maintained for a long time without being easily degraded during use.

[0016] 3) Without considering the chirality of carbon nanotubes, the regulation process is simplified.

[0017] Other beneficial effects in the embodiments of the utility model will be further described below. Description of the Drawings

[0018] Figure 1 Schematic diagrams of three structures of a complete carbon nanotube (a), a line-defect carbon nanotube (b) and a curved carbon nanotape (c) according to an embodiment of the present invention.

[0019] Figure 2 Schematic diagrams of the energy band structure of a complete carbon nanotube (a) and the energy band structure of a linear-defect quasi-carbon nanotube according to an embodiment of the present invention (b). Detailed implementation manners

[0020] The following makes a detailed description of the implementation manners of the present invention. It should be emphasized that the following description is merely exemplary and not intended to limit the scope and application of the present invention.

[0021] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element. In addition, the connection can be for a fixing function or for a coupling or communicating function.

[0022] It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the embodiments of the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0023] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present invention, "a plurality of" means two or more unless otherwise specifically defined.

[0024] Refer to Figure 1 , an embodiment of the present invention provides a quasi-carbon nanotube structure (see b in Figure 1 ), including a carbon nanotube, and an axial linear defect is cut on the carbon nanotube. Among them, the linear defect realizes the regulation of chirality and bandgap width, so that the semiconductor chiral carbon nanostructure is transformed into a metallic carbon nanostructure.

[0025] The manufacturing method of such quasi-carbon nanotube structure includes: forming axial linear defects on the carbon nanotube by means of plasma etching, ion beam etching or laser cutting.

[0026] Referring to Figure 1 , another quasi-carbon nanotube structure is provided in an embodiment of the present invention (see Figure 1 c) of

[0027] which includes carbon nanobelts. Axial linear defects are formed by cutting on the carbon nanotube, and the carbon nanobelts are curled to form a quasi-carbon nanotube including axial linear defects; wherein, the linear defects realize the regulation of chirality and bandgap width, so that the semiconductor chiral carbon nanotube structure is transformed into a metallic carbon nanotube structure.

[0028] The specific embodiments of the present invention are further described below.

[0029] The structures of two quasi-carbon nanotubes in the embodiments of the present invention are as shown in Figure 1 (b, c) of Figure 2 which include linear defects. The quasi-carbon nanotube is a high-purity conductive material. As shown in

[0030] (b) of

[0031] the energy bandgap of the carbon tube is occupied by a large number of electron states, and the carbon nanotube is transformed from a semiconductor to a metal conductor. The degenerate states introduced by the linear defects in the quasi-carbon nanotube can greatly improve the electrical conductivity of the carbon nanotube. The present invention is applicable to, but not limited to, the regulation of the electrical conductivity of armchair, zigzag and other various chiral state carbon nanotubes.

[0032] Fabrication Method

[0033] Figure 1 A method for fabricating the quasi-carbon nanotube structure shown in (b) of includes the following steps:

[0034] 1) Prepare carbon nanotubes: Select carbon nanotubes with a diameter of 0.8 to 30 nanometers as the initial material.

[0035] 2) Etching of linear defects:

[0036] Introduce linear defects into the carbon nanotubes. The linear defects can be achieved by methods such as plasma etching, ion beam etching, or laser cutting. During the etching process, precisely control the etching parameters (such as time, temperature, gas concentration, etc.) to adjust the density and distribution of the defects.

[0037] Thereby, the quasi-carbon nanotubes with axial linear defects form carbon tubes with new electronic properties and good conductivity.

[0038] Figure 1 A method for fabricating the quasi-carbon nanotube structure shown in (c) of includes the following steps:

[0039] 1) Prepare carbon nanoribbons: Select carbon nanoribbons with a width of 1 to 100 nanometers as the initial material.

[0040] 2) Anneal the carbon nanoribbons in an electric field to cause the carbon nanoribbons to curl and form quasi-carbon nanotubes with axial linear defects. A specific method is to apply a strong electric field perpendicular to the substrate direction of 2.5 - 5 kV / m in a vacuum condition, heat the graphene nanoribbon with the substrate to 1200K - 1300K, keep it warm for 1 - 10 hours, so that the curled nanoribbons reach a stable structure, and then slowly cool to room temperature with the annealing equipment. Due to the action of the electric field and heating, the graphene carbon nanoribbons will curl to form quasi-carbon nanotubes containing line defects.

[0041] Thereby, the carbon nanoribbons with curvature curl into quasi-carbon nanotubes with axial linear defects, forming carbon tubes with new electronic properties and good conductivity.

[0042] In summary, the present utility model provides a simple, efficient and easily controllable structural solution to regulate the electrical conductivity of carbon nanotubes. Without considering the initial chirality of carbon nanotubes, axial linear defects can be introduced to achieve the transition of carbon nanotubes from semiconductivity to metallicity, effectively regulating their bandgap width. This transition is applicable not only to carbon nanotubes in armchair, zigzag and other arbitrary chiral states, but also significantly improves the electrical conductivity of carbon nanotubes through the degenerate states of the introduced linear defects. The present utility model not only improves the electrical conductivity and field emission performance of carbon nanotubes, but also provides a new mechanism and means for regulating the electronic properties of carbon nanotubes.

[0043] Compared with the current technology, the present utility model also has the following advantages and outstanding effects:

[0044] 1) Compared with the current technology, the implementation method of the present utility model is flexible, compatible with a variety of manufacturing processes, and does not require significant modification of the production process, which is conducive to large-scale application and production.

[0045] 2) Once the line defects are introduced, the structure of the carbon nanotubes changes little, and their electrical conductivity can be maintained for a long time without being easily degraded during use.

[0046] 3) There is no need to consider the chirality of carbon nanotubes, which simplifies the regulation process.

[0047] The above content is a further detailed description of the present utility model in combination with specific / preferred embodiments, and it cannot be determined that the specific implementation of the present utility model is only limited to these descriptions. For those of ordinary skill in the technical field to which the present utility model belongs, without departing from the concept of the present utility model, several alternatives or modifications can be made to these described embodiments, and these alternative or modified forms should all be regarded as belonging to the protection scope of the present utility model. In the description of this specification, the description of reference terms such as "an embodiment", "some embodiments", "preferred embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. Without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples. Although the embodiments of the present utility model and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the scope of protection of the patent application.

Claims

1. A quasi-carbon nanotube structure, characterized in that: It comprises carbon nanotubes with a diameter of 0.8 to 30 nanometers, on which axial linear defects are cut and formed; wherein the linear defects realize the regulation of chirality and band gap width, so that the semiconductor chiral carbon nanostructure is transformed into a metallic carbon nanostructure.

2. A quasi-carbon nanotube structure, characterized in that: It includes a carbon nanostrip with an initial width of 1 to 100 nanometers, which is curled to form a quasi-carbon nanotube containing axial linear defects; wherein the linear defects realize the regulation of chirality and band gap width, so that the semiconductor chiral carbon nanostructure is transformed into a metallic carbon nanostructure.

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