Device for improving yield of polycrystalline silicon by utilizing heat energy radiation of reduction furnace
By installing an additional silicon core on the chassis of the polysilicon reduction furnace and using thermal energy to deposit silicon powder, the problem of increasing polysilicon production is solved, and the effect of efficient use of waste and reducing energy consumption is achieved.
Patent Information
- Application Number
- CN202421975568.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-15
- Publication Date
- 2025-07-01
- Estimated Expiration
- 2034-08-15
AI Technical Summary
In polysilicon reduction production, it is difficult for the prior art to increase the polysilicon production without increasing energy consumption or other production investment, and vapor-phase silicon powder is difficult to recycle and utilize.
By installing an additional silicon core on the chassis of the reduction furnace, free silicon powder is deposited on the additional silicon core by using the thermal radiation in the reduction furnace to increase the yield of polysilicon.
Without changing the production parameters, the production of polysilicon is increased, the silicon core consumption and reduction power consumption are reduced, and the waste silicon core and graphite is reasonably utilized, which improves the utilization rate of waste.
Smart Images
Figure CN223047263U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of polysilicon production, and particularly relates to a device for improving the output of polysilicon by utilizing the heat energy radiation of a reduction furnace. Background Art
[0002] The production mode of polysilicon reduction is to set a graphite base in the reduction furnace, place a silicon core on the graphite base, break down the silicon core through high-voltage electricity, then introduce trichlorosilane, and thermally decompose to deposit silicon on the silicon core to form polysilicon. Currently, the polysilicon reduction furnaces used on the market have a number of graphite bases arranged at intervals according to a certain rule on the chassis, and a silicon core is correspondingly installed on each graphite base for deposition. During the production of polysilicon reduction, there is a certain conversion rate of gaseous silicon. Generally speaking, under certain production parameters, the output of polysilicon reduction is relatively fixed. If the output of polysilicon is to be increased, it is necessary to increase the input of raw materials and energy consumption. For the trichlorosilane entering the reduction furnace, a part is deposited on the normal silicon core through thermal decomposition, the remaining part becomes tail gas, and another part becomes silicon powder and is deposited on the chassis, and the gaseous silicon powder is difficult to recycle.
[0003] Therefore, in order to increase the output of polysilicon reduction without increasing energy consumption or other production inputs, this solution proposes a device for improving the output of polysilicon by making full use of the heat energy radiation in the polysilicon reduction furnace. Summary of the Utility Model
[0004] The utility model aims to solve the problem that the output cannot be further increased without changing the production parameters in the production of polysilicon reduction, and proposes a device for improving the output of polysilicon by utilizing the heat energy radiation of the reduction furnace, so as to achieve the purpose of improving the utilization rate of waste materials and the output of polysilicon reduction.
[0005] In order to achieve the above-mentioned utility model purpose, the technical solution of the utility model is as follows:
[0006] A device for improving the output of polysilicon by utilizing the heat energy radiation of a reduction furnace includes a reduction furnace chassis, normal silicon cores and original graphite bases arranged on the reduction furnace chassis. It is characterized in that additional silicon cores are arranged in the gaps between the positions of the normal silicon cores on the reduction furnace chassis, the additional silicon cores are installed on the newly added graphite bases, and the newly added graphite bases are arranged between the original graphite bases on the reduction furnace chassis and are not powered on, and rely on heat energy radiation to deposit the free silicon powder in the reduction furnace on the additional silicon cores.
[0007] Further, the newly added graphite base is installed at the central position of the space formed by several adjacent graphite bases on the reduction furnace chassis.
[0008] Further, the additional silicon cores are normal silicon cores, waste silicon cores or broken silicon cores.
[0009] Furthermore, the installation height of the additional silicon cores is 1 - 1.6 m.
[0010] Furthermore, the added graphite base is a conventional or discarded graphite base.
[0011] Furthermore, the gap between the additional silicon cores and the surrounding normal silicon cores is greater than the sum of the thicknesses of the silicon deposited on their surfaces.
[0012] In summary, the present utility model has the following advantages:
[0013] 1. In the present utility model, waste silicon cores or broken silicon cores are arranged in the gaps between the normal silicon cores on the reduction furnace chassis. The heat energy radiation during the production of the reduction furnace deposits polysilicon on the additional silicon cores. Without additional raw material input and energy consumption, the consumption of silicon cores and the reduction power consumption are reduced, and the reduction output is increased.
[0014] 2. The present utility model can reasonably utilize waste silicon cores and waste graphite, thereby reducing the consumption of auxiliary materials and improving the utilization rate of auxiliary materials.
[0015] 3. In the present utility model, some free silicon powder during the production of the reduction furnace can settle on the additionally provided waste silicon cores, reducing the amount of silicon powder in the furnace during the operation of the reduction furnace and increasing the product output. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a schematic diagram of the additional silicon core installation points on the reduction furnace chassis of the present utility model;
[0017] In the figure:
[0018] 1. Reduction furnace chassis, 2. Installation points, 3. Normal silicon cores. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0019] In order to more clearly illustrate the present utility model, the present utility model will be further described below in conjunction with preferred embodiments and the drawings. Those skilled in the art should understand that the specific content described below is illustrative rather than restrictive, and should not be used to limit the protection scope of the present utility model.
[0020] Embodiment 1
[0021] The present utility model provides a device for improving the polysilicon output by using the heat energy radiation of a reduction furnace, including a reduction furnace chassis 1, normal silicon cores 3 provided on the reduction furnace chassis 1, and an original graphite base. Waste silicon cores or broken silicon cores, collectively referred to as additional silicon cores, are arranged in the gaps between the normal silicon core points on the reduction furnace chassis 1. These additional silicon cores are installed on the added graphite bases, and the added graphite bases are arranged between the original graphite bases on the reduction furnace chassis 1.
[0022] As Figure 1 Shown in the figure is a schematic diagram of the additional silicon core added points of the present utility model. The added point 2 on the reduction furnace chassis is shown as the solid dots in the figure.
[0023] In this embodiment, the installation method of the graphite base of the additional silicon core is similar to that of the original graphite base on the inner chassis of the reduction furnace. The installation method of the additional silicon core is similar to that of the normal silicon core, and the graphite base of the additional silicon core does not need to be electrified.
[0024] Preferably, in this embodiment, the added graphite base is installed at the central position of the space formed by several adjacent graphite seats on the reduction furnace chassis.
[0025] Preferably, in this embodiment, the installation height of the additional silicon core is 1 - 1.6 m to prevent it from tilting.
[0026] Preferably, in order to prevent the additional silicon core from interfering with the deposition of the normal silicon core, the gap between the additional silicon core and the surrounding normal silicon cores should be greater than the sum of the thicknesses of the deposited silicon on their surfaces. In actual application, generally, the gap between them should be ensured to be greater than 5 cm.
[0027] The working principle of the present utility model is as follows:
[0028] Install the additional silicon core in the gap between the normal silicon cores on the reduction furnace chassis. During installation, place the base on the chassis, match it with the bullet head, and then insert the additional silicon core into the bullet head, which is similar to the installation method of the normal silicon core;
[0029] During the production process, the surrounding electrified normal silicon cores will release heat, decompose the silicon in the gas phase, and at the same time heat the additional silicon core. After reaching the temperature for silicon deposition, the gas-phase silicon in the reduction furnace will be deposited on the surface of the additional silicon core, thereby realizing the growth of polysilicon under the condition that some silicon cores are not electrified.
[0030] The following Table 1 shows some parameter comparisons when this solution is applied in the reduction furnace and when it is not applied. Under the condition that the running time, power consumption, and other raw material inputs are the same, the single-furnace output of the reduction furnace has increased by 114 kg after applying this solution.
[0031] Table 1 Comparison before and after applying this solution
[0032]
[0033] The advantage of the present utility model is that there is no need to change the process parameters during the production of the reduction furnace. The waste silicon cores or broken silicon cores are arranged in the gaps between the normal silicon cores on the reduction furnace chassis, and the heat energy radiation during the production of the reduction furnace is used to deposit polysilicon on the additional silicon cores. Without additional raw material and energy consumption, the silicon core consumption and reduction power consumption are reduced, and the reduction output is increased. The temperature required for depositing silicon on the additional silicon core only utilizes the heat energy radiation released during the growth process of the normal silicon cores.
[0034] In addition, this solution can reasonably utilize waste silicon cores and waste graphite, thereby reducing the consumption of auxiliary materials and improving the utilization rate of auxiliary materials. Moreover, by adding silicon cores, some free silicon powder during the production of the reduction furnace can settle, thereby reducing the amount of silicon powder in the furnace during the operation of the reduction furnace and increasing the product output.
[0035] The above are only the preferred embodiments of the present utility model, and do not impose any form of limitation on the present utility model. Any simple modification or equivalent change made to the above embodiments based on the technical essence of the present utility model shall fall within the protection scope of the present utility model.
Claims
1. A device for increasing the yield of polysilicon by utilizing heat radiation from a reduction furnace, comprising a reduction furnace chassis (1) and a normal silicon core (3) and an original graphite base arranged on the reduction furnace chassis (1), characterized in that: An additional silicon core is arranged in the gap between the normal silicon core (3) points on the reduction furnace bottom plate (1), and the additional silicon core is installed on an additional graphite base. The additional graphite base is arranged between the original graphite bases on the reduction furnace bottom plate (1) and is not powered. The free silicon powder in the reduction furnace is deposited on the additional silicon core by relying on heat radiation.
2. The device for increasing polysilicon production by utilizing heat radiation from a reduction furnace as claimed in claim 1, characterized in that: The additional graphite base is installed at the center of the space formed by several adjacent graphite bases on the reduction furnace bottom plate (1).
3. The device for increasing polysilicon production by utilizing heat radiation from a reduction furnace as claimed in claim 1, characterized in that: The additional silicon core is a normal silicon core (3), a discarded silicon core or a broken silicon core.
4. The device for increasing polysilicon production by utilizing heat radiation from a reduction furnace as claimed in claim 1, characterized in that: The installation height of the additional silicon core is 1-1.6m.
5. The device for increasing polysilicon yield by utilizing heat radiation from a reduction furnace as claimed in claim 1, characterized in that: The additional graphite base is a conventional or discarded graphite base.
6. The device for increasing polysilicon production by utilizing heat radiation from a reduction furnace as claimed in claim 2, characterized in that: The gap between the additional silicon core and the surrounding normal silicon core (3) is greater than the sum of the thicknesses of silicon deposited on the surfaces of the two.