ALD device and semiconductor equipment

Abstract

The utility model provides an ALD device and semiconductor equipment, and relates to the technical field of semiconductors. The ALD device comprises a tray and a spraying panel. The tray is used for bearing a substrate, the spraying panel and the tray are oppositely arranged, the spraying panel is provided with a first air inlet area, a second air inlet area and an isolation area, the isolation area is located between the first air inlet area and the second air inlet area, and the first air inlet area is used for spraying a metal source to the substrate on the tray; the second gas inlet area is used for spraying an oxygen source to the substrate on the tray, and the isolation area is used for spraying an inert gas source to the substrate on the tray, so that a CVD reaction caused by direct contact of a metal source and the oxygen source in an effective deposition area can be completely eradicated, and the film thickness uniformity and the film layer quality in the ALD process are effectively improved.

Description

Technical Field

[0001] The utility model relates to the technical fields of photovoltaics and semiconductors, and in particular, to an ALD device and a semiconductor device. Background Art

[0002] In the semiconductor field, ALD (Atomic Layer Deposition) technology is usually involved, that is, thin film deposition is carried out through an ALD device.

[0003] However, when the existing ALD equipment performs the spraying process, the metal source and the oxygen source are prone to gas mixing in the central area of the spraying system, and a film layer of CVD (chemical vapor deposition) reaction is generated, resulting in poor film thickness uniformity and film layer quality of the substrate. Summary of the Utility Model

[0004] The utility model provides an ALD device and a semiconductor device, which can prevent gas mixing of the metal source and the oxygen source of the ALD device in the effective deposition area, thereby reducing the CVD reaction, increasing the proportion of the ALD reaction in the deposited film layer, and improving the film layer quality.

[0005] The embodiments of the utility model can be implemented as follows:

[0006] The ALD device includes a tray and a spraying panel.

[0007] The ALD device usually further includes a cavity and a cavity cover. An installation chamber is formed by the cavity and the cavity cover. The tray and the spraying panel are arranged in the installation chamber. The tray is used to place the substrate. The tray and the spraying panel are spaced apart and arranged in parallel. Therefore, by providing a first gas inlet area and a second gas inlet area on the spraying panel facing the substrate on the tray, the metal source can be sprayed onto the substrate placed on the tray through the first gas inlet area, the oxygen source can be sprayed onto the substrate placed on the tray through the second gas inlet area, and an inert gas source can be sprayed onto the substrate placed on the tray through the isolation area, so that the substrate can successively complete adsorption in the atmosphere of the metal source and the oxygen source, and realize surface reaction deposition of the substrate.

[0008] During this process, the gas will flow to the periphery of the installation chamber, and the tray will also rotate to make the gas distribution on the substrate relatively uniform. An air extraction pump is arranged in the installation chamber, and the gas can be pumped out of the installation chamber through the air extraction pump. The isolation area is arranged between the first gas inlet area and the second gas inlet area, which can eject enough isolation gas between the spraying panel and the tray, and can balance and make up for the uneven flow caused by the uneven pumping force of the air extraction pump around the installation chamber or the uneven rotation of the tray, so as to avoid the CVD reaction caused by the direct contact of the metal source and the oxygen source in the effective deposition area of the substrate.

[0009] The beneficial effects of the ALD device and semiconductor equipment provided by the embodiments of the present utility model include: by arranging the isolation area between the first gas inlet area and the second gas inlet area, sufficient isolation gas can be ejected through the isolation area to a larger area between the shower panel and the tray, so as to prevent the CVD reaction caused by the direct contact between the metal source and the oxygen source in the effective deposition area, and avoid the phenomenon of uneven flow caused by the uneven pumping force of the exhaust pump around the installation chamber or the uneven rotation of the tray, thereby effectively improving the film thickness uniformity and film layer quality during the ALD process. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present utility model, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0011] Figure 1 It is a cross-sectional view of the ALD device provided by the embodiments of the present utility model;

[0012] Figure 2 It is a schematic structural diagram of one of the embodiments of the shower panel provided by the embodiments of the present utility model;

[0013] Figure 3 It is a schematic structural diagram of one of the first side embodiments of the shower bottom plate provided by the embodiments of the present utility model;

[0014] Figure 4 It is a schematic structural diagram of one of the second side embodiments of the shower bottom plate provided by the embodiments of the present utility model;

[0015] Figure 5 It is a schematic structural diagram of one of the second embodiments of the shower panel provided by the embodiments of the present utility model;

[0016] Figure 6 It is a schematic structural diagram of one of the second embodiments of the first side of the shower bottom plate provided by the embodiments of the present utility model;

[0017] Figure 7 It is a schematic structural diagram of one of the second embodiments of the second side of the shower bottom plate provided by the embodiments of the present utility model.

[0018] Icons: 10 - ALD device; 100 - tray; 200 - spray panel; 210 - first air intake area; 220 - second air intake area; 230 - first isolation area; 240 - second isolation area; 300 - spray bottom plate; 310 - first gas transmission area; 311 - first through - hole; 320 - second gas transmission area; 321 - second through - hole; 330 - third gas transmission area; 331 - third through - hole; 340 - fourth gas transmission area; 341 - fourth through - hole; 350 - first installation area; 360 - second installation area; 370 - third installation area; 400 - rotating part; 500 - heating part. Detailed implementation mode

[0019] To make the objectives, technical solutions and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are part of the embodiments of the present utility model, rather than all of the embodiments. Usually, the components of the embodiments of the present utility model described and shown in the accompanying drawings here can be arranged and designed in various different configurations.

[0020] Therefore, the following detailed description of the embodiments of the present utility model provided in the accompanying drawings is not intended to limit the scope of the present utility model to be protected, but merely represents the selected embodiments of the present utility model. Based on the embodiments in the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.

[0021] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0022] In the description of the present utility model, it should be noted that if terms such as "upper", "lower", "inner", "outer", etc. are used to indicate the orientation or positional relationship, it is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the present utility model is usually placed when in use. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present utility model.

[0023] In addition, if terms such as "first", "second", etc. are only used for distinguishing descriptions, they cannot be understood as indicating or implying relative importance.

[0024] It should be noted that, without conflict, the features in the embodiments of the present utility model can be combined with each other.

[0025] In the semiconductor field, technologies such as ALD (Atomic Layer Deposition) are usually involved, that is, thin film deposition is carried out through an ALD device.

[0026] However, when the existing ALD equipment performs the spraying process, the metal source and the oxygen source are prone to gas mixing in the central area of the spraying system, and a film layer of CVD (chemical vapor deposition) reaction is generated, resulting in poor film thickness uniformity and film layer quality of the substrate.

[0027] Based on the above problems, the present utility model provides an ALD device, which can prevent the metal source and the oxygen source of the ALD device from generating gas mixing in the effective deposition area, thereby reducing the CVD reaction, increasing the proportion of the ALD reaction in the deposited film layer, and improving the film layer quality.

[0028] Please refer to Figures 1 to 4 , the ALD device 10 includes a tray 100 and a spraying panel 200.

[0029] Among them, the tray 100 is used to carry the substrate. The spraying panel 200 is disposed opposite to the tray 100. The spraying panel 200 is provided with a first air inlet area 210, a second air inlet area 220 and an isolation area. The first air inlet area 210 and the second air inlet area 220 are disposed opposite to each other. The isolation area is located in the central area between the first air inlet area 210 and the second air inlet area 220. The first air inlet area 210 is used to spray the metal source onto the substrate on the tray 100, and the second air inlet area 220 is used to spray the oxygen source onto the substrate on the tray 100. The isolation area is used to spray an inert gas source onto the substrate on the tray 100.

[0030] First of all, it should be noted that the ALD device 10 usually further includes a cavity (not shown in the figure) and a cavity cover (not shown in the figure). An installation chamber is formed by the cavity and the cavity cover. The tray 100 and the spraying panel 200 are disposed in the installation chamber, and the spraying panel 200 is disposed on the cavity cover. An air delivery channel is provided on the cavity cover, and the metal source, the oxygen source and the inert gas source are respectively delivered to the spraying panel 200 through the air delivery channel. At the same time, the cavity cover can also play a role in installing and fixing the spraying panel 200.

[0031] The metal source and the oxygen source are sprayed onto the substrate on the tray 100 through the spraying panel 200, so that the substrate successively completes adsorption in the atmosphere of the metal source and the oxygen source, thereby realizing reaction deposition on the surface of the substrate. During this process, the gas will flow to the surrounding of the installation chamber. Therefore, an air extraction pump (not shown in the figure) is provided in the installation chamber to extract the gas from the installation chamber through the air extraction pump.

[0032] It is also worth mentioning that the installation chamber surrounded by the chamber body and the chamber cover is usually cylindrical, so the ALD device 10 is particularly suitable for circular single-chamber type ALD equipment.

[0033] In this embodiment, by setting the isolation area between the first air inlet area 210 and the second air inlet area 220, sufficient isolation gas can be sprayed to a larger area between the spray panel 200 and the tray 100 through the isolation area, so as to prevent the CVD reaction caused by the direct contact between the metal source sprayed from the first air inlet area 210 and the oxygen source sprayed from the second air inlet area 220 in the effective deposition area, and avoid the uneven flow caused by uneven suction force of the vacuum pump around the installation chamber or uneven rotation of the tray 100, thereby effectively improving the film thickness uniformity and film layer quality during the ALD process.

[0034] Furthermore, the isolation region includes a first isolation region 230 and a second isolation region 240, the first isolation region 230 is located in the central region between the first gas intake region 210 and the second gas intake region 220, and the second isolation region 240 is located in the adjacent sides of the first gas intake region 210 and the second gas intake region 220, so that the region between the first gas intake region 210 and the second gas intake region 220 is completely blocked by the first isolation region 230 and the second isolation region 240, thereby effectively avoiding the CVD reaction caused by direct contact between the metal source sprayed from the first gas intake region 210 and the oxygen source sprayed from the second gas intake region 220 in the effective deposition area.

[0035] Further, the number of the first air inlet regions 210 and the second air inlet regions 220 is the same, and the sum of the number of the first air inlet regions 210 and the second air inlet regions 220 is at least two, the number of the second isolation regions 240 is also at least two, the first air inlet regions 210 and the second air inlet regions 220 are spaced and evenly distributed on the spray panel 200, the second isolation regions 240 are arranged between the adjacent first air inlet regions 210 and the second air inlet regions 220, the second isolation regions 240 are connected to the first isolation regions 230, and are used together to spray the inert gas source to the substrate on the tray 100. The inert gas source may be, but is not limited to, inert gases such as N2 and Ar.

[0036] In other words, the sum of the number of first air intake regions 210 and the number of second air intake regions 220 is the same as the number of second isolation regions 240, and at least one first air intake region 210 and at least one second air intake region 220 are alternately arranged with at least two second isolation regions 240, that is, the two sides of any first air intake region 210 are adjacent to two second isolation regions 240, and the two sides of any second air intake region 220 are adjacent to two second isolation regions 240.

[0037] In this embodiment, the first intake area 210 and the second intake area 220 are arranged staggeredly with at least two second isolation areas 240, so that the gases sprayed by the first intake area 210, the second intake area 220 and the second isolation areas 240 are relatively more uniform with respect to the substrate placed on the tray 100; and the second isolation areas 240 are arranged between the adjacent first intake area 210 and the second intake area 220, which can also effectively block the two gases sprayed from the adjacent first intake area 210 and the second intake area 220, avoid the phenomenon of gas mixing, and generate a film layer by CVD reaction, thereby reducing the film thickness uniformity and film layer quality of the substrate.

[0038] It is worth mentioning that the first isolation area 230 and at least two second isolation areas 240 are connected to form an integral area.

[0039] Optionally, the sum of the numbers of the first intake area 210 and the second intake area 220 and the number of the second isolation areas 240 are usually multiples of 2. The first intake area 210 and the second intake area 220 are arranged at intervals, and the second isolation areas 240 are located between the adjacent first intake area 210 and the second intake area 220. For example, the sum of the numbers of the first intake area 210 and the second intake area 220 and the number of the second isolation areas 240 can be 2, 4, 6, 8, etc. For example, when the numbers of the first intake area 210 and the second intake area 220 are both one, the number of the second intake area 220 is 2; of course, in other embodiments, the numbers can also be multiples of other values, which are not specifically limited herein.

[0040] As Figure 2 shown, the sum of the numbers of the first intake area 210 and the second intake area 220 is two, the number of the second isolation areas 240 is also two, and the first intake area 210 and the second intake area 220 are arranged staggeredly with the two second isolation areas 240.

[0041] Furthermore, the first intake area 210, the second intake area 220 and the second isolation areas 240 enclose a circular area, and the first isolation area 230 is located at the center of the circular area.

[0042] In this embodiment, by arranging the first isolation area 230 at the center of the circular area, the inert gas source sprayed by the first isolation area 230 can be concentrated in the middle area between the spray panel 200 and the tray 100, so as to effectively isolate the metal source sprayed by the first intake area 210 and the oxygen source sprayed by the second intake area 220.

[0043] Furthermore, the first isolation area 230 is circular or polygonal.

[0044] In this embodiment, as Figure 2 or Figure 5 shown, the first isolation region 230 is circular, which can make the inert gas source spray relatively more concentratedly to the middle region between the spray panel 200 and the tray 100, so as to effectively play an isolation role.

[0045] Of course, in other embodiments of the present invention, the first isolation region 230 may also be a polygon, and the number of sides of the polygon is equal to the sum of the numbers of the first intake region 210, the second intake region 220, and the second isolation region 240. For example, when the sum of the numbers of the first intake region 210 and the second intake region 220 is two, and the number of the second isolation region 240 is also two, the first isolation region 230 is a quadrilateral, and each side is respectively connected to the first intake region 210 or the second isolation region 240. Of course, it is not limited to this, and no specific limitation is made here.

[0046] Furthermore, the ALD device 10 further includes a spray bottom plate 300, the spray bottom plate 300 is attached to the side of the spray panel 200 away from the tray 100, the spray bottom plate 300 is provided with a first through hole 311, a second through hole 321, a third through hole 331, and a fourth through hole 341. The first through hole 311 corresponds to the first intake region 210, the second through hole 321 corresponds to the first isolation region 230, the third through hole 331 corresponds to the first isolation region 230, and the fourth through hole 341 corresponds to the second isolation region 240. It should be noted that the spray bottom plate 300 is disposed on the chamber cover, and the first through hole 311, the second through hole 321, the third through hole 331, and the fourth through hole 341 are communicated with the gas transmission channels on the chamber cover, so as to realize the transmission of gas to the first intake region 210, the second intake region 220, the first isolation region 230, and the second isolation region 240 of the spray panel 200 through the through holes on the spray bottom plate 300 respectively.

[0047] In this embodiment, the spray bottom plate 300 is attached to the top of the spray panel 200. By providing a first through-hole 311 in the spray bottom plate 300 corresponding to the first gas inlet area 210, a metal source is input into the first gas inlet area 210 through the first through-hole 311; a second through-hole 321 corresponds to the second gas inlet area 220, so that an oxygen source is input into the second gas inlet area 220 through the second through-hole 321; a third through-hole 331 corresponds to the first isolation area 230, so that an inert gas source is sprayed into the central position area between the spray panel 200 and the tray 100 through the third through-hole 331, to prevent the metal source and the oxygen source from directly contacting in the central area and causing a CVD reaction; a fourth through-hole 341 corresponds to the second isolation area 240, so that an inert gas source is sprayed between the adjacent first gas inlet area 210 and the second gas inlet area 220 through the fourth through-hole 341, to prevent the metal source and the oxygen source from directly contacting in the area between the adjacent first gas inlet area 210 and the second gas inlet area 220 and causing a CVD reaction, thereby avoiding the phenomenon of gas mixing, reducing the CVD reaction ratio in the film layer, and improving the film layer quality.

[0048] Furthermore, the spray bottom plate 300 is provided with an adjusting member (not shown in the figure). The adjusting member is arranged on the pipeline corresponding to and connected to the third through-hole 331 and the fourth through-hole 341, and the adjusting member is used to adjust the gas flow rates through the third through-hole 331 and the fourth through-hole 341.

[0049] In this embodiment, the adjusting member can be a setscrew. The pipeline includes the internal spaces of the third through-hole 331 and the fourth through-hole 341. Therefore, by using setscrews with different diameters, the ventilation areas of the third through-hole 331 and the fourth through-hole 341 can be adjusted, thereby adjusting the ventilation flow rates of the inert gas source, ensuring that the inert isolation gas can effectively isolate the direct contact between the precursor gases, and by adjusting different ventilation flow rates, different coating processes can be adapted.

[0050] Furthermore, on one side of the spray bottom plate 300 connected to the spray panel 200, a first gas transmission area 310 and a second gas transmission area 320 are provided. The first through-hole 311 is arranged in the first gas transmission area 310, and the first gas transmission area 310 corresponds to the first gas inlet area 210; the second through-hole 321 is arranged in the second gas transmission area 320, and the second gas transmission area 320 corresponds to the second gas inlet area 220.

[0051] Among them, both the first gas transmission area 310 and the second gas transmission area 320 are arranged as groove structures.

[0052] In this embodiment, by setting both the first gas delivery area 310 and the second gas delivery area 320 as groove structures, a buffer chamber is formed between the first gas delivery area 310 and the first gas inlet area 210, and a buffer chamber is formed between the second gas delivery area 320 and the second gas inlet area 220, so that the gas is uniformly filled in the grooves before passing through the spraying panel 200. After the buffer chamber is filled with the gas, it is uniformly sprayed onto the substrate on the tray 100 from the first gas inlet area 210 and the second gas inlet area 220, thereby improving the uniformity of the metal source and oxygen source outgassing of the spraying panel 200, and thus improving the film forming quality and uniformity.

[0053] It can be understood that a plurality of holes are provided on the spraying panel 200, that is, both the first gas inlet area 210 and the second gas inlet area 220 spray the metal source and the oxygen source onto the substrate on the tray 100 through the holes.

[0054] Further, a third gas delivery area 330 and a fourth gas delivery area 340 are provided on one side of the spraying bottom plate 300 connected to the spraying panel 200. A third through hole 331 is provided in the third gas delivery area 330, and the third gas delivery area 330 corresponds to the first isolation area 230;

[0055] A fourth through hole 341 is provided in the fourth gas delivery area 340, and the fourth gas delivery area 340 corresponds to the second isolation area 240.

[0056] In this embodiment, by making the third gas delivery area 330 correspond to the first isolation area 230, an inert gas source is input into the first isolation area 230 through the third through hole 331 on the third gas delivery area 330; by making the fourth gas delivery area 340 correspond to the second isolation area 240, an inert gas source is input into the second isolation area 240 through the fourth through hole 341 in the fourth gas delivery area 340.

[0057] It can be understood that the number and area of the first gas delivery area 310 and the first gas inlet area 210 are exactly corresponding, the number and area of the second gas delivery area 320 and the second gas inlet area 220 are exactly corresponding, the number and area of the third gas delivery area 330 and the first isolation area 230 are exactly corresponding, and the number and area of the fourth gas delivery area 340 and the second isolation area 240 are exactly corresponding.

[0058] As Figure 2 and 3 shown, the number of both the first gas delivery area 310 and the first gas inlet area 210 is one, the number of both the second gas delivery area 320 and the second gas inlet area 220 is one, the number of both the third gas delivery area 330 and the first isolation area 230 is also one, and the number of both the fourth gas delivery area 340 and the second isolation area 240 is two.

[0059] Further, on the side of the spray bottom plate 300 away from the spray panel 200, there are also a first installation area 350, a second installation area 360, and a third installation area 370. The first through hole 311 is located in the first installation area 350, and the second through hole 321 is located in the second installation area 360. The third through hole 331 and the fourth through hole 341 are both arranged in the third installation area 370, and the first installation area 350, the second installation area 360, and the third installation area 370 are all arranged as groove structures.

[0060] In this embodiment, the side of the spray bottom plate 300 away from the spray panel 200 is connected to the cavity cover. By arranging the first installation area 350, the second installation area 360, and the third installation area 370 on this side as groove structures, it is convenient to install with the cavity cover. That is, this groove structure plays a role in positioning and installation. By installing in cooperation with the cavity cover through this groove, the time for aligning the holes during installation can be reduced.

[0061] Specifically, as Figure 4 shown, since both the third gas delivery area 330 and the fourth gas delivery area 340 are used to deliver an inert gas source, therefore, by arranging the third through hole 331 and the fourth through hole 341 in the third installation area 370 at the same time, the inert gas source can be delivered to the first isolation area 230 and the second isolation area 240 respectively through the third through hole 331 and the fourth through hole 341 located in the third installation area 370.

[0062] Further, the ALD device 10 further includes a rotating member 400 and a heating member 500. The heating member 500 is arranged at the bottom of the tray 100 for heating the tray 100, and the rotating member 400 is connected to the tray 100 for driving the tray 100 to rotate.

[0063] In this embodiment, during the process of spraying gas onto the substrate through the spray panel 200, the rotating member 400 drives the tray 100 to rotate, so that the sprayed gas is relatively evenly distributed on the substrate, thereby improving the film formation uniformity and film formation quality. And the heating member 500 heats the tray 100, thereby providing a suitable temperature environment for the deposition process of the substrate and ensuring the effective progress of the deposition process.

[0064] As Figures 5 to 7 shown, the embodiment of the present utility model also provides an embodiment in which the total number of the first gas inlet areas 210 and the second gas inlet areas 220 and the number of the second isolation areas 240 are both 4. In this embodiment, the first isolation area 230 and the four second isolation areas 240 are connected to each other as a whole area, and moreover, the two first gas inlet areas 210 and the two second gas inlet areas 220 are arranged in an interleaved manner, and the four gas inlet areas and the four second isolation areas 240 are arranged in an interleaved manner.

[0065] Correspondingly, the number of the first gas transmission regions 310 and the second gas transmission regions 320 is also four each, and the number of the fourth gas transmission regions 340 is also four. The four gas transmission regions and the four fourth gas transmission regions 340 are arranged in an interleaved manner.

[0066] Furthermore, the number of the first installation regions 350 and the second installation regions 360 is also two each, that is, the sum of their numbers is four. The two first through holes 311 are respectively located in the first installation regions 350, the two second through holes 321 are respectively located in the second installation regions 360, the number of the third installation regions 370 is one, the four fourth through holes 341 and one third through hole 331 are all located in the third installation region 370, and the third installation region 370 is in a cross shape.

[0067] Furthermore, the present invention also provides a semiconductor device, including the ALD device 10 as implemented above.

[0068] In this embodiment, in addition to implementing the thin film deposition process through the ALD device 10, the semiconductor device may further include at least one of a lithography device, an etching device, a cleaning device, etc., to at least implement at least one of the lithography process, the etching process, and the cleaning process. Of course, other devices may also be included, which are not specifically limited herein.

[0069] In summary, the embodiment of the present invention provides an ALD device 10 and a semiconductor device. By arranging the first isolation region 230 at the central position of the first gas inlet region 210, sufficient isolation gas can be ejected through the first isolation region 230 to a relatively large central region between the spray panel 200 and the tray 100, so as to prevent the CVD reaction caused by the direct contact between the metal source and the oxygen source in the effective deposition region, and avoid the phenomenon of uneven flow caused by uneven pumping force of the air pump around the installation chamber or uneven rotation of the tray 100, thereby effectively improving the film thickness uniformity and film layer quality during the ALD process.

[0070] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. An ALD device, characterized in that, Comprising: A tray (100) for carrying a substrate; A spray panel (200) disposed opposite to the tray (100), the spray panel (200) being provided with a first intake area (210), a second intake area (220) and an isolation area located between the first intake area (210) and the second intake area (220). The first intake area (210) is used to spray a metal source onto the substrate on the tray (100), the second intake area (220) is used to spray an oxygen source onto the substrate on the tray (100), and the isolation area is used to spray an inert gas source onto the substrate on the tray (100).

2. The ALD device according to claim 1, wherein The isolation area includes a first isolation area (230) and a second isolation area (240), the second isolation area (240) is connected to the first isolation area (230). The first isolation area (230) is located in the central area between the first intake area (210) and the second intake area (220), and the second isolation area (240) is located on the adjacent side of the first intake area (210) and the second intake area (220).

3. The ALD device according to claim 2, characterized in that, The first intake area (210), the second intake area (220) and the second isolation area (240) enclose a circular area, and the first isolation area (230) is located at the center of the circular area.

4. The ALD device according to claim 2, characterized in that, The number of the first intake areas (210) and the second intake areas (220) is the same, and the sum of the number of the first intake areas (210) and the second intake areas (220) and the number of the second isolation areas (240) are all multiples of 2. The first intake areas (210) and the second intake areas (220) are arranged at intervals, and the second isolation area (240) is located between adjacent first intake areas (210) and second intake areas (220).

5. The ALD device according to claim 2, wherein The ALD device further includes a spray bottom plate (300) disposed on the side of the spray panel (200) away from the tray (100). The spray bottom plate (300) is provided with a first through hole (311), a second through hole (321), a third through hole (331) and a fourth through hole (341). The first through hole (311) corresponds to the first intake area (210), the second through hole (321) corresponds to the second intake area (220), the third through hole (331) corresponds to the first isolation area (230), and the fourth through hole (341) corresponds to the second isolation area (240).

6. The ALD apparatus according to claim 5, wherein The spray bottom plate (300) is provided with an adjusting member disposed on the pipeline corresponding to and connected to the third through hole (331) and the fourth through hole (341). The adjusting member is used to adjust the gas flow rate through the third through hole (331) and the fourth through hole (341).

7. The ALD apparatus according to claim 5, wherein One side of the spray bottom plate (300) connected to the spray panel (200) is provided with a first gas transmission area (310) and a second gas transmission area (320). The first through hole (311) is arranged in the first gas transmission area (310), and the first gas transmission area (310) corresponds to the first air inlet area (210). The second through hole (321) is arranged in the second gas transmission area (320), and the second gas transmission area (320) corresponds to the second air inlet area (220). Both the first gas transmission area (310) and the second gas transmission area (320) are arranged as groove structures. One side of the spray bottom plate (300) connected to the spray panel (200) is provided with a third gas transmission area (330) and a fourth gas transmission area (340). The third through hole (331) is arranged in the third gas transmission area (330), and the third gas transmission area (330) corresponds to the first isolation area (230). The fourth through hole (341) is arranged in the fourth gas transmission area (340), and the fourth gas transmission area (340) corresponds to the second isolation area (240).

8. The ALD device according to claim 5, wherein One side of the spray bottom plate (300) away from the spray panel (200) is further provided with a first installation area (350), a second installation area (360) and a third installation area (370). The first through hole (311) is located in the first installation area (350), and the second through hole (321) is located in the second installation area (360). Both the third through hole (331) and the fourth through hole (341) are arranged in the third installation area (370), and the first installation area (350), the second installation area (360) and the third installation area (370) are all arranged as groove structures.

9. The ALD device according to claim 1, characterized in that, The ALD device further includes a rotating member (400) and a heating member (500). The heating member (500) is arranged at the bottom of the tray (100) for heating the tray (100). The rotating member (400) is connected to the tray (100) for driving the tray (100) to rotate.

10. A semiconductor device, characterized in that, An ALD device comprising the ALD device according to any one of claims 1-9.

Images