Wafer processing device

Abstract

The utility model provides a wafer processing device, and relates to the technical field of semiconductor manufacturing, the wafer processing device comprises a furnace tube with a reaction cavity, the reaction cavity is used for placing a plurality of wafers which are sequentially arranged along the height direction of the furnace tube, and each wafer is ensured to be uniformly exposed in a reaction gas environment. The side wall of the furnace tube is provided with an air inlet group comprising a plurality of air inlets and an exhaust hole group, the plurality of air inlets in the air inlet group are sequentially arranged along the height direction of the furnace tube, and the plurality of air inlets in the air inlet group are communicated with the exhaust hole group through the reaction cavity; according to the method, the reaction gas enters different heights of the reaction cavity through a plurality of gas inlet holes with different heights, so that a uniform flowing environment is formed in the reaction cavity, and a wafer at each height position can be in uniform contact with the reaction gas and is subjected to thin film deposition; reaction gas which does not react with the wafer is discharged out of the reaction cavity through the exhaust hole set, and the problem that the thin film deposition thickness of the wafer is not consistent is effectively solved through the design.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and more particularly, to a wafer processing device. Background Art

[0002] In the process of semiconductor manufacturing, the processing quality of wafers directly affects the performance and yield of the final products. Especially in the deposition process of semiconductor devices, the film thickness uniformity on the wafer surface is one of the key process parameters. Specifically, when depositing a thin film on the wafer surface, multiple wafers need to be loaded on a susceptor first, and then the entire susceptor is placed into a furnace tube. Through the heating and gas flow inside the furnace tube, the uniform processing of the wafer surface and internal structure is completed, so as to achieve the simultaneous deposition of thin films on multiple wafers and improve the deposition efficiency.

[0003] However, existing furnace tubes usually adopt a simple gas flow path design, and the layout of the gas inlet and outlet is relatively single, making it difficult to achieve precise control of the gas flow rate and gas composition. Due to the influence of the pipe structure, gas flow rate, gas consumption, and process conditions on the gas flow inside the furnace tube, the film thickness differences may occur on the wafer surfaces at different positions due to uneven gas distribution. This uneven film thickness distribution will lead to inconsistent performance of the wafers in subsequent processes, and even cause the failure of the functions of some devices. Summary of the Utility Model

[0004] The purpose of this application is to provide a wafer processing device for the deficiencies in the above-mentioned existing technologies.

[0005] To achieve the above purpose, the technical solutions adopted in the embodiments of this application are as follows:

[0006] The embodiments of this application provide a wafer processing device, including a furnace tube with a reaction chamber. The reaction chamber is used to place a plurality of wafers arranged in sequence along the height direction of the furnace tube. An air inlet hole group including a plurality of air inlet holes and an exhaust hole group are provided on the side wall of the furnace tube. The plurality of air inlet holes in the air inlet hole group are arranged in sequence along the height direction of the furnace tube. The plurality of air inlet holes in the air inlet hole group are communicated with the exhaust hole group through the reaction chamber. The air inlet hole group is used to introduce reaction gas into different heights in the reaction chamber through the plurality of air inlet holes, and the exhaust hole group is used to discharge the reaction gas that has not reacted with the wafers in the reaction chamber.

[0007] Optionally, the plurality of air inlet holes in the air inlet hole group are all communicated with the same air inlet pipe, and a gas flow controller is provided on the air inlet pipe.

[0008] Optionally, the exhaust hole group is communicated with an exhaust pipe, and a gas concentration detector is provided on the exhaust pipe.

[0009] Optionally, the gas flow controller is electrically connected to the gas concentration detector.

[0010] Optionally, a plurality of intake hole groups are formed in the side wall of the furnace tube, and a plurality of exhaust hole groups corresponding to each intake hole group one by one are formed. The plurality of intake hole groups are arranged at intervals along the height direction of the furnace tube.

[0011] Optionally, the plurality of intake hole groups are arranged at intervals along the circumferential direction of the side wall of the furnace tube.

[0012] Optionally, the plurality of exhaust hole groups are arranged at intervals along the height direction of the furnace tube.

[0013] Optionally, two adjacent exhaust hole groups are communicated along the height direction of the furnace tube.

[0014] Optionally, a negative pressure assembly is further arranged on the exhaust pipe, and the exhaust pipe is communicated with the gas collection chamber through the negative pressure assembly.

[0015] Optionally, the wafer processing device further includes a susceptor placed in the reaction chamber, and the susceptor is used to carry a plurality of wafers.

[0016] The beneficial effects of the present application include:

[0017] The present application provides a wafer processing device, including a furnace tube having a reaction chamber. The reaction chamber is used to place a plurality of wafers arranged in sequence along the height direction of the furnace tube, ensuring that each wafer is evenly exposed to the environment of the reaction gas. An intake hole group including a plurality of intake holes and an exhaust hole group are formed in the side wall of the furnace tube. The plurality of intake holes in the intake hole group are arranged in sequence along the height direction of the furnace tube, and the plurality of intake holes in the intake hole group are communicated with the exhaust hole group through the reaction chamber, so that the reaction gas enters different heights of the reaction chamber through a plurality of intake holes at different heights, thereby forming a uniform flow environment in the reaction chamber, enabling each wafer at each height position to be in uniform contact with the reaction gas, and effectively preventing the problem of inconsistent film deposition thickness of the wafers. Subsequently, the reaction gas that has not reacted with the wafers is discharged from the reaction chamber through the exhaust hole group.

[0018] Generally speaking, the structure of multi-hole intake makes the gas concentration at different heights more uniform, so that the film thickness on the surfaces of the wafers at different heights is more uniform, greatly improving the consistency and yield of the products. In addition, due to the optimization of gas flow, the process defects caused by uneven gas flow in the traditional furnace tube are effectively reduced, thereby improving the overall production efficiency and the performance stability of semiconductor devices. Description of the Drawings

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings required to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0020] Figure 1 One of the structural schematic diagrams of a wafer processing apparatus provided by an embodiment of the present application;

[0021] Figure 2 Another structural schematic diagram of a wafer processing apparatus provided by an embodiment of the present application.

[0022] Reference numerals: 10 - furnace tube; 10a - reaction chamber; 20 - intake hole group; 21 - intake hole; 30 - exhaust hole group; 40 - intake pipe; 50 - gas flow controller; 60 - exhaust pipe; 70 - gas concentration detector; 80 - wafer boat; 2 - wafer. Detailed implementation manners

[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are some, but not all, of the embodiments of the present application. Usually, the components of the embodiments of the present application described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0024] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application claimed, but merely represents selected embodiments of the present application. It should be noted that, without conflict, the various features in the embodiments of the present application can be combined with each other, and the combined embodiments are still within the protection scope of the present application.

[0025] It should be noted that: similar reference numerals and letters denote similar items in the following accompanying drawings. Therefore, once an item is defined in one accompanying drawing, it does not need to be further defined and explained in subsequent accompanying drawings.

[0026] In the description of the present application, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship when the product of this application is normally placed. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be understood as indicating or implying relative importance.

[0027] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0028] In the description of the present application, it should also be noted that unless otherwise clearly specified and limited, the terms "arranged", "installed", "connected", and "joined" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0029] An embodiment of the present application provides a wafer processing device, as Figure 1 and Figure 2 shown, including a furnace tube 10 having a reaction chamber 10a. The reaction chamber 10a is used to place a plurality of wafers 2 arranged in sequence along the height direction of the furnace tube 10. This vertical arrangement mode can not only maximize the utilization of the space in the reaction chamber 10a, but also ensure that each wafer 2 is evenly exposed to the reaction gas environment to optimize the surface reaction conditions of each wafer 2, thereby improving the processing uniformity.

[0030] In order to further optimize the flow control of the reaction gas, an intake hole group 20 and an exhaust hole group 30 are provided on the side wall of the furnace tube 10. Among them, each intake hole group 20 includes a plurality of intake holes 21. Each exhaust hole group 30 can include one exhaust hole or a plurality of exhaust holes corresponding one-to-one to the plurality of intake holes 21. The plurality of intake holes 21 in the intake hole group 20 are arranged in sequence along the height direction of the furnace tube 10. This layout mode allows the reaction gas to enter the reaction chamber 10a through each intake hole 21 and uniformly contact the wafers 2 at different heights. Since the intake hole group 20 and the exhaust hole group 30 are interconnected through the reaction chamber 10a, the reaction gas can form a uniform flow environment in the reaction chamber 10a. Each wafer 2 at each height position can receive uniform reaction gas, which can effectively prevent the problem of inconsistent film thickness caused by uneven flow of the reaction gas. Subsequently, the reaction gas is effectively discharged from the reaction chamber 10a through the exhaust hole group 30. When the exhaust hole group 30 includes a plurality of exhaust holes, the arrangement of the plurality of exhaust holes is also set along the height direction of the furnace tube 10 to ensure that the reaction gas at different heights can flow horizontally, making the contact between the reaction gas and the wafers 2 more uniform and sufficient, and enabling the reaction gas that has not reacted with the wafers 2 to be quickly discharged, avoiding the process instability caused by the retention of the reaction gas in the reaction chamber 10a.

[0031] Generally speaking, the structure of porous gas inlet makes the gas concentration at different heights more uniform, so that the film thickness on the surface of each wafer 2 is more uniform, which can greatly improve the product consistency and yield. Secondly, due to the optimization of the reaction gas flow, the utilization efficiency of the reaction gas is improved, which can reduce material waste and production costs, and can also effectively reduce the process defects of the traditional furnace tube 10 caused by uneven reaction gas flow, thus improving the overall production efficiency and the performance stability of semiconductor devices.

[0032] Optionally, multiple gas inlet holes 21 in the gas inlet hole group 20 are all connected to the same gas inlet pipe 40, and a gas flow controller 50 is arranged on the gas inlet pipe 40.

[0033] Specifically, as Figure 1 and Figure 2 shown, multiple gas inlet holes 21 in the same gas inlet hole group 20 are connected through the same gas inlet pipe 40, which can realize the unified control of the reaction gas flow. A gas flow controller 50 is arranged on the gas inlet pipe 40, and the function of this device is to accurately adjust the flow rate of the reaction gas entering the reaction chamber 10a. Through the gas flow controller 50, the flow velocity and flow rate of the reaction gas can be accurately adjusted according to the process requirements. Since all the gas inlet holes 21 in the same gas inlet hole group 20 are supplied with gas through the same gas inlet pipe 40, the gas flow controller 50 ensures that the amount and composition of the reaction gas delivered by each gas inlet hole 21 are exactly the same, avoiding the film thickness unevenness caused by the difference in the reaction gas flow velocity or the change in the reaction gas composition.

[0034] When depositing a thin film on the wafer 2, the gas inlet pipe 40 evenly distributes the reaction gas to the gas inlet holes 21 at different heights. Each gas inlet hole 21 introduces the reaction gas with unified control into the reaction chamber 10a, so as to ensure that the surfaces of the wafers 2 at different height positions can receive the reaction gas with the same concentration. At the same time, the gas flow controller 50, as the core adjustment device of this system, further ensures the accuracy and consistency of the reaction gas supply by controlling the flow velocity and flow rate of the reaction gas.

[0035] All in all, by connecting multiple gas inlet holes 21 in the same gas inlet hole group 20 to the same gas inlet pipe 40 and arranging a gas flow controller 50 on the gas inlet pipe 40, it can ensure that the reaction gas supply sources of each gas inlet hole 21 are the same and the reaction gas concentration remains constant, thereby reducing the film thickness difference caused by uneven reaction gas distribution, improving the uniformity of the film thickness on the surface of the wafer 2, and further improving the performance consistency and production yield of semiconductor devices.

[0036] Optionally, the exhaust hole group 30 is connected to the exhaust pipe 60, and a gas concentration detector 70 is arranged on the exhaust pipe 60.

[0037] Specifically, as Figure 1As shown, the exhaust hole group 30 is connected to the exhaust pipe 60, and the exhaust pipe 60 is responsible for discharging the waste gas. The gas concentration detector 70 is installed at a key position of the exhaust pipe 60 to detect in real time the concentration of the reaction gas that has not reacted with the wafer 2, ensuring that the consumption of the reaction gas can be accurately understood during the deposition process. The gas concentration detector 70 can analyze the concentration of the reaction gas in real time, enabling the operator to adjust the intake gas volume, flow rate or other process parameters in a timely manner according to the detection results, ensuring that the reaction gas is always within the optimal concentration range.

[0038] Optionally, the gas flow controller 50 is electrically connected to the gas concentration detector 70.

[0039] Specifically, the gas flow controller 50 and the gas concentration detector 70 form a closed-loop control loop through a feedback system. When the gas concentration detector 70 detects that the concentration of the discharged reaction gas is lower than the set value, it means that the consumption of the reaction gas in the reaction chamber 10a is relatively large. At this time, the feedback system will receive this signal and transmit the information to the gas flow controller 50 by means of electrical connection. After receiving the instruction, the gas flow controller 50 automatically increases the intake gas flow rate to supplement the consumption of the reaction gas, ensuring that the wafer 2 surface continues to receive sufficient reaction gas supply, thereby maintaining the uniformity of the deposition process. When depositing a thin film on the wafer 2, the reaction gas usually includes oxygen, etc., which is used to form an oxide film on the surface of the wafer 2. The concentration of oxygen can be detected by the gas concentration detector 70 and fed back to the gas flow controller 50. The gas flow controller 50 adjusts parameters such as the intake concentration of oxygen according to the feedback results to make the consumption and replenishment of oxygen reach balance, maintaining the uniformity and consistency of the gas flow.

[0040] On the other hand, when the gas concentration detector 70 detects that the concentration of the discharged reaction gas is too high, it means that the reaction gas in the reaction chamber 10a has not fully participated in the chemical reaction, and the utilization rate of the reaction gas is not high. This situation usually indicates that the intake gas volume is too large or the reaction efficiency has decreased. After receiving this signal, the feedback system immediately issues an instruction to the gas flow controller 50 to adjust the intake parameters, reduce the intake gas volume or lower the flow rate, making the reaction of the reaction gas in the reaction chamber 10a with the wafer 2 surface more sufficient. This dynamic adjustment mechanism can not only improve the utilization rate of the reaction gas, but also prevent resource waste and process instability caused by excessive intake gas.

[0041] Generally speaking, the gas concentration detector 70 can monitor the concentration change of the discharged reaction gas in real time. The feedback system, as the central hub for information transmission and processing, compares the detected reaction gas concentration with the set value and quickly responds according to the deviation magnitude, controlling the gas flow controller 50 to make corresponding adjustments. This system can achieve automation and intelligence during the consumption and utilization of the reaction gas, reduce the need for human intervention, and improve the stability of the process and the utilization efficiency of the reaction gas.

[0042] Optionally, a plurality of groups of intake hole groups 20 are provided on the side wall of the furnace tube 10, and a plurality of groups of exhaust hole groups 30 corresponding to each group of intake hole groups 20 one by one. The plurality of groups of intake hole groups 20 are arranged at intervals along the height direction of the furnace tube 10.

[0043] Specifically, as Figure 1 shown, by providing a plurality of groups of intake hole groups 20 and corresponding exhaust hole groups 30 on the side wall of the furnace tube 10, independent control of the supply and discharge of the reaction gas at different heights can be achieved. This structural design aims to optimize the flow and distribution of the reaction gas in the reaction chamber 10a to ensure that the reaction gas on the surface of the wafer 2 is more uniform and controllable during the reaction process. The plurality of groups of intake hole groups 20 are arranged at intervals along the height direction of the furnace tube 10. Each group of intake hole groups 20 is respectively connected to an independent intake pipe 40, and the intake flow is uniformly managed by a centralized gas flow controller 50, which can dynamically adjust the intake parameters of each group according to different reaction gas requirements.

[0044] The plurality of groups of intake hole groups 20 and exhaust hole groups 30 of the furnace tube 10 are distributed along the height direction. This spaced layout can ensure that the reaction gas can enter different heights of the reaction chamber 10a evenly, avoiding the uneven distribution of the reaction gas that occurs in the single gas flow path design. Each group of intake hole groups 20 has an intake pipe 40 corresponding to it, and all the intake pipes 40 are centrally regulated by a gas flow controller 50. This design enables the gas flow controller 50 to control the intake conditions of one or more intake hole groups 20 simultaneously according to the feedback from a plurality of gas concentration detectors 70, which can not only ensure flexibility but also improve the control accuracy. Similarly, each group of exhaust hole groups 30 has an exhaust pipe 60 corresponding to it, and a gas concentration detector 70 is arranged on each exhaust pipe 60 to detect the concentration of the reaction gas discharged at different heights, avoiding inaccurate detection results.

[0045] Among them, the gas flow controller 50 forms a closed-loop control system with multiple gas concentration detectors 70 through electrical connection. The information of different gas concentration detectors 70 is fed back to the gas flow controller 50 by the feedback system. The gas flow controller 50 adjusts the intake parameters of each group of intake hole groups 20 respectively according to the detected reaction gas concentration differences. At this time, the gas flow controller 50 can set different intake parameters for the intake hole groups 20 at different heights to meet the requirements of the wafers 2 at different positions for the reaction gas. However, the reaction gas parameters of the multiple intake holes 21 in the same intake hole group 20 remain consistent to ensure uniform supply of the reaction gas in the same area.

[0046] In summary, through the layout of multiple groups of intake hole groups 20 and exhaust hole groups 30, independent supply and discharge control of reaction gases at different heights can be achieved, ensuring a more reasonable and uniform distribution of reaction gases in the reaction chamber 10a and avoiding film thickness differences caused by uneven distribution of reaction gases. Secondly, the linkage between the gas flow controller 50 and multiple gas concentration detectors 70 can enhance the automatic control ability, accurately adjust the intake parameters of each group of intake hole groups 20, thereby improving the uniformity of the reaction gas distribution and providing higher flexibility and accuracy.

[0047] Optionally, multiple groups of intake hole groups 20 are arranged at intervals circumferentially along the side wall of the furnace tube 10.

[0048] Specifically, as Figure 2 shown, the circumferential interval arrangement of multiple groups of intake hole groups 20 can effectively avoid the overlap or congestion of gas flow paths, enabling the reaction gas to be more evenly distributed in each area of the reaction chamber 10a, thereby ensuring the uniformity of the film thickness on the surface of the wafer 2. The circumferential interval arrangement method can effectively avoid gas supply deviation. Through the multi-directional distribution of the intake hole groups 20, the reaction gas enters the reaction chamber 10a from different directions, thereby realizing multi-point supply of the gas. After the reaction gas flows into the reaction chamber 10a, it can uniformly diffuse in all directions and at different heights, helping to eliminate problems such as local gas accumulation or poor flow caused by single-direction supply of the gas. At the same time, the independent design of the intake pipe 40 can ensure that the intake volume of each group of intake hole groups 20 can be independently adjusted to meet the requirements of the wafers 2 at different heights or regions for the reaction gas.

[0049] In addition, each intake hole group 20 is connected to an external gas source through an independent intake pipe 40. The circumferential spaced arrangement of the intake hole groups 20 enables the intake pipes 40 to be flexibly configured according to the specific shape and spatial layout of the reaction chamber 10a. This not only reduces the mutual interference between the intake pipes 40 but also improves the rationality of the gas flow path. Each intake pipe 40 can provide a stable gas flow rate for the corresponding intake hole group 20 and achieve precise supply under the regulation of the gas flow controller 50. The multi-directional and multi-point gas supply further improves the uniformity of the distribution of the reaction gas in the reaction chamber 10a, ensuring uniform contact of the reaction gas with the surface of the wafer 2.

[0050] In summary, the circumferential spaced arrangement of the intake hole groups 20 enables the reaction gas to be more evenly distributed in various regions of the reaction chamber 10a, effectively solving the problem of uneven local gas distribution caused by single gas supply in the traditional design. At the same time, it provides greater flexibility for the placement of the intake pipes 40.

[0051] Optionally, multiple exhaust hole groups 30 are arranged at intervals along the height direction of the furnace tube 10, or two adjacent exhaust hole groups 30 are communicated along the height direction of the furnace tube 10.

[0052] Specifically, multiple exhaust hole groups 30 are arranged at intervals along the height direction of the furnace tube 10. This layout enables each exhaust hole group 30 to independently correspond to each intake hole group 20, thereby forming a relatively independent intake and exhaust cycle, ensuring the effective discharge of the gas in each height region, preventing gas from remaining in the reaction chamber 10a, and improving the efficiency and uniformity of gas flow. At the same time, it also allows two adjacent exhaust hole groups 30 to be communicated in the height direction to form a large exhaust channel for discharging the gas in multiple regions. This flexible exhaust design can not only improve the overall exhaust efficiency but also adapt to different process requirements.

[0053] When the exhaust hole groups 30 are arranged at intervals along the height direction, it can ensure that the gas discharge in each region is independent. Each intake hole group 20 and the corresponding exhaust hole group 30 form a closed gas flow loop, enabling the reaction gas to enter from the intake hole group 20, be evenly distributed on the surface of the wafer 2 at the corresponding height, and then flow horizontally through the reaction chamber 10a to the corresponding exhaust hole group 30 for discharge. This independent intake and exhaust cycle design helps to reduce the residence time of the gas in the reaction chamber 10a, prevent gas from accumulating in certain regions, and further improve the uniformity of the film thickness on the surface of the wafer 2.

[0054] When two adjacent sets of exhaust hole groups 30 communicate with each other in the height direction, multiple exhaust hole groups 30 jointly form a large exhaust passage. This design allows the reaction gases entering the reaction chamber 10a from different heights to be discharged centrally, further improving the gas discharge efficiency. The formation of the large exhaust passage can quickly discharge a large amount of reaction gases. Especially in reaction processes with a large gas consumption, this design can effectively reduce the residence time of gases in the reaction chamber 10a, avoid poor circulation or accumulation of gases in the chamber, and ensure the stability and uniformity of the process environment.

[0055] Generally speaking, the design of the independent exhaust hole groups 30 enables the gases in each intake area to be discharged in a timely and effective manner without being interfered by the gas flow in other areas, ensuring the independence and high efficiency of gas flow. The connected design of adjacent exhaust hole groups 30 can further improve the gas discharge capacity. In a process environment that requires a high exhaust volume, the gases from multiple exhaust hole groups 30 can be discharged centrally quickly, reducing the residence time of gases in the reaction chamber 10a and avoiding affecting the film thickness uniformity.

[0056] Optionally, a negative pressure component is also provided on the exhaust pipe 60, and the exhaust pipe 60 is connected to the gas collection chamber through the negative pressure component.

[0057] Specifically, the negative pressure component is installed on the exhaust pipe 60, which can enhance the overall efficiency of the exhaust system. By utilizing the airflow acceleration generated by negative pressure, the unreacted gases can be quickly evacuated from the reaction chamber 10a, preventing them from staying in the chamber for too long and affecting the uniformity of the film thickness on the surface of the wafer 2. This design ensures the continuous flow of gases inside the reaction chamber 10a and accelerates the gas renewal through the action of negative pressure, thereby providing a purer atmosphere environment for subsequent reactions and further improving the stability and controllability of the process. The exhaust pipe 60 is connected to the gas collection chamber through the negative pressure component, forming a complete gas discharge and collection system. Through the design of the gas collection chamber, the exhausted waste gases can be centrally processed, preventing them from being directly discharged into the environment and polluting the air.

[0058] Optionally, the wafer processing apparatus further includes a susceptor 80 placed inside the reaction chamber 10a, and the susceptor 80 is used to carry multiple wafers 2.

[0059] Specifically, one of the important components of the wafer processing apparatus is the susceptor 80 placed inside the reaction chamber 10a. The main function of the susceptor 80 is to carry multiple wafers 2, keeping them stable during the processing and obtaining uniform processing effects. The susceptor 80 is designed to be firmly placed at a fixed position in the reaction chamber 10a, ensuring that the wafers 2 do not displace or vibrate during the entire reaction process, thereby improving the stability and precision of wafer 2 processing.

[0060] The function of the susceptor 80 is not only to physically support the wafer 2, but its design directly affects the uniformity of gas flow and the reaction efficiency. Since the wafer 2 needs to be in full contact with the gas during the reaction process, the multi-layer carrier structure of the susceptor 80 needs to ensure the distance between the wafers 2 so that the reaction gas can be evenly distributed on the surface of each layer of wafer 2, avoiding the problem of inconsistent film thickness caused by uneven gas flow.

[0061] In addition, the susceptor 80 should be made of high-strength and high-temperature-resistant materials and be able to adapt to the high-temperature process environment in the reaction chamber 10a. Its multi-layer structure design can not only carry multiple wafers 2, but also ensure an appropriate spacing between the wafers 2, so that each wafer 2 is evenly exposed to the reaction gas. The base of the susceptor 80 is specially designed to fit precisely with the inner wall of the reaction chamber 10a to ensure that it will not displace or deform in the high-temperature environment. Such a design can not only improve the stability of the susceptor 80, but also ensure that the gas can flow smoothly between the wafers 2.

[0062] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A wafer processing apparatus, characterized in that, It includes a furnace tube (10) having a reaction chamber (10a) for placing a plurality of wafers (2) arranged in sequence along the height direction of the furnace tube (10). An air inlet hole group (20) including a plurality of air inlet holes (21) and an exhaust hole group (30) are provided on the side wall of the furnace tube (10). The plurality of air inlet holes (21) in the air inlet hole group (20) are arranged in sequence along the height direction of the furnace tube (10). The plurality of air inlet holes (21) in the air inlet hole group (20) communicate with the exhaust hole group (30) through the reaction chamber (10a). The air inlet hole group (20) is used to introduce reaction gas into different heights in the reaction chamber (10a) through the plurality of air inlet holes (21), and the exhaust hole group (30) is used to discharge the reaction gas that has not reacted with the wafers (2) in the reaction chamber (10a).

2. The wafer processing apparatus according to claim 1, wherein The plurality of air inlet holes (21) in the air inlet hole group (20) are all communicated with the same air inlet pipe (40), and a gas flow controller (50) is provided on the air inlet pipe (40).

3. The wafer processing apparatus according to claim 2, wherein The exhaust hole group (30) is communicated with an exhaust pipe (60), and a gas concentration detector (70) is provided on the exhaust pipe (60).

4. The wafer processing apparatus according to claim 3, wherein The gas flow controller (50) is electrically connected to the gas concentration detector (70).

5. The wafer processing apparatus according to any one of claims 1-4, characterized in that, A plurality of groups of the air inlet hole groups (20) and a plurality of groups of the exhaust hole groups (30) corresponding to each group of the air inlet hole groups (20) are provided on the side wall of the furnace tube (10), and the plurality of groups of the air inlet hole groups (20) are arranged at intervals along the height direction of the furnace tube (10).

6. The wafer processing apparatus according to claim 5, wherein The plurality of groups of the air inlet hole groups (20) are arranged at intervals in the circumferential direction of the side wall of the furnace tube (10).

7. The wafer processing apparatus according to claim 5, wherein, The plurality of groups of the exhaust hole groups (30) are arranged at intervals along the height direction of the furnace tube (10).

8. The wafer processing apparatus according to claim 5, wherein, Two adjacent groups of the exhaust hole groups (30) are communicated along the height direction of the furnace tube (10).

9. The wafer processing apparatus according to claim 3 or 4, wherein A negative pressure component is further provided on the exhaust pipe (60), and the exhaust pipe (60) is communicated with a gas collection chamber through the negative pressure component.

10. The wafer processing apparatus according to any one of claims 1-4, characterized in that, The wafer processing device further includes a susceptor (80) placed in the reaction chamber (10a), and the susceptor (80) is used to carry a plurality of the wafers (2).

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