Wafer processing device
The crystal wafer processing device addresses uneven gas flow disturbances by using a return flow groove design in the base and carrier component to ensure uniform substrate reaction quality and minimize gas leakage into the reaction chamber.
Patent Information
- Application Number
- CN202422407240.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-30
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2034-09-30
AI Technical Summary
The air-floating gas enters the reaction chamber along the gap between the carrier assembly and the base in the wafer processing device, causing airflow disturbances around the substrate and affecting the reaction quality.
Reflow grooves are opened on the side walls of the base and/or the outer peripheral walls of the carrier assembly to form a reflow structure, guiding the air-floating gas to form a reflow in the gap, reducing gas overflow and reducing airflow interference around the substrate.
Through the design of the reflux tank, the airflow interference of the airfloating gas entering the reaction chamber is reduced, ensuring the uniformity and quality of the substrate reaction.
Smart Images
Figure CN223103070U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of film forming technology, and particularly relates to a wafer processing device. Background Art
[0002] Currently, a wafer processing device includes a base and a carrier assembly. In order to ensure uniform reaction of the substrate on the carrier assembly, it is necessary to drive the carrier assembly to rotate relative to the base. However, when using air floating gas to drive the rotation of the carrier assembly, the air floating gas will enter the reaction chamber formed by the carrier assembly and the cover plate assembly along the gap between the carrier assembly and the base, which is likely to cause airflow disturbances of different sizes around the substrate and affect the reaction quality between the substrate surface and the reaction gas. Summary of the Utility Model
[0003] Purpose of the Utility Model: The embodiments of this application provide a wafer processing device, aiming to overcome the current technical problems.
[0004] Technical Solution: A wafer processing device in the embodiments of this application includes:
[0005] A base, the base has a receiving groove, the receiving groove has a bottom wall and a side wall, the base has a first direction, and the side wall extends along the first direction from the plane where the bottom wall is located;
[0006] A carrier assembly, the carrier assembly is arranged in the receiving groove, and there is a gap between the outer peripheral wall of the carrier assembly and the side wall;
[0007] The side wall and / or the outer peripheral wall of the carrier assembly are / is provided with a return groove, the return groove has a groove wall and a groove opening, the groove opening is located on the outer peripheral wall of the carrier assembly and / or the side wall and is communicated with the gap, along the first direction, the maximum distance between the groove wall and the bottom wall is a mm, and the maximum distance between the groove opening of the return groove and the bottom wall is b mm, satisfying: a > b;
[0008] The minimum distance between the groove wall and the bottom wall is equal to the minimum distance between the groove opening and the bottom wall.
[0009] In some embodiments, the groove opening has an upper edge and a lower edge, the upper edge and the lower edge are arranged along the first direction, the groove wall extends from the lower edge to the upper edge, the groove wall includes a first diversion section and a second diversion section arranged front and back along the extension direction, the first diversion section is connected to the lower edge, the second diversion section is connected to the upper edge, and along the extension direction, the distance between the first diversion section and the bottom wall gradually increases, and the distance between the second diversion section and the bottom wall gradually decreases.
[0010] In some embodiments, the reflux groove is disposed around the outer peripheral wall of the carrier assembly and / or on the side wall.
[0011] In some embodiments, the carrier assembly has a bearing surface, the wafer processing apparatus has a second direction, and the process gas flows through the bearing surface along the second direction;
[0012] Along the second direction, the side wall includes a first wall segment located upstream of the carrier assembly and a second wall segment located downstream of the carrier assembly, and the reflux groove is formed on the first wall segment.
[0013] In some embodiments, the arc length of the first wall segment is c mm, and the arc length of the second wall segment is d mm, satisfying: c≥d.
[0014] In some embodiments, along the first direction, the notch has a first dimension of e mm, and the spacing dimension between the outer peripheral wall of the carrier assembly and the side wall is f mm, satisfying: e≥f.
[0015] In some embodiments, the bottom wall is provided with a sunken groove, the sunken groove is disposed around the periphery of the bottom wall, and the opening of the sunken groove faces the outer edge of the carrier assembly and communicates with the gap.
[0016] In some embodiments, a gas discharge channel is further provided inside the base, and the gas discharge channel communicates with the sunken groove.
[0017] In some embodiments, a plurality of the reflux grooves are provided on the side wall or the outer peripheral wall of the carrier assembly, and along the first direction, the plurality of notches are arranged at intervals.
[0018] In some embodiments, reflux grooves are provided on both the side wall and the outer peripheral wall of the carrier assembly, and the reflux grooves provided on the side wall and the reflux grooves provided on the outer peripheral wall are arranged in a staggered manner in the first direction.
[0019] Beneficial effects: The wafer processing device in the embodiments of the present application includes a base and a carrier assembly. The base has a receiving groove, the receiving groove has a bottom wall and a side wall, the base has a first direction, and the side wall extends from the plane where the bottom wall is located along the first direction; the carrier assembly is disposed in the receiving groove, and there is a gap between the outer peripheral wall of the carrier assembly and the side wall; a return groove is provided on the side wall and / or the outer peripheral wall of the carrier assembly, the return groove has a groove wall and a groove opening, the groove opening is located on the side wall and / or the outer peripheral wall of the carrier assembly and is communicated with the gap, along the first direction, the maximum distance between the groove wall and the bottom wall is a mm, and the maximum distance between the groove opening of the return groove and the bottom wall is b mm, satisfying: a > b; the minimum distance between the groove wall and the bottom wall is equal to the minimum distance between the groove opening and the bottom wall. By providing a return groove on the side wall of the base and / or the outer peripheral wall of the carrier assembly, the air floating gas between the bottom wall and the carrier assembly can be shunted when flowing through the groove opening of the return groove, and a return flow is formed under the guidance of the groove wall, thereby blocking the air floating gas flowing in the first direction in the gap, reducing the overflow of the air floating gas from the gap, reducing the airflow interference received by the reaction gas around the substrate, and ensuring the reaction quality of the substrate. Brief Description of the Drawings
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those skilled in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0021] Figure 1 It is a schematic diagram of the assembly position relationship between the base and multiple groups of carrier assemblies in the wafer processing device of the embodiment of the present application, and one group of carrier assemblies is exploded in the figure;
[0022] Figure 2 It is a three-dimensional structure schematic diagram of the assembled base and multiple groups of carrier assemblies in the wafer processing device of the embodiment of the present application;
[0023] Figure 3 It is a top view structure schematic diagram of the assembled base and multiple groups of carrier assemblies in the wafer processing device of the embodiment of the present application;
[0024] Figure 4 It is a front view structure schematic diagram of one group of carrier assemblies in the wafer processing device of the embodiment of the present application;
[0025] Figure 5 It is Figure 3 A cross-sectional view in the A-A direction in;
[0026] Figure 6 It is for the present application Figure 5 A partial enlarged schematic diagram at B in;
[0027] Figure 7 Schematic cross-sectional view of the wafer processing apparatus according to another embodiment of the present application in the A-A direction;
[0028] Figure 8 For the present application Figure 7 Partial enlarged schematic view at position C in the present application;
[0029] Figure 9 Schematic cross-sectional view of the wafer processing apparatus according to yet another embodiment of the present application in the A-A direction;
[0030] Figure 10 For the present application Figure 9 Partial enlarged schematic view at position D in the present application;
[0031] Reference numerals: 1, base; 10, receiving groove; 101, bottom wall; 102, side wall; 2, carrier assembly; 21, outer peripheral wall; 3, gap; 4, return groove; 40, groove wall; 400, groove opening; 4001, upper edge; 4002, lower edge; 401, first diversion section; 402, second diversion section; 22, carrier surface; X, first direction; 1021, first wall section; 1022, second wall section; Y, second direction; 1011, sunken groove; 1010, opening; 5, gas discharge channel. Detailed implementation manners
[0032] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application.
[0033] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present application. In the description of the present application, "a plurality of" means two or more, and "at least one" can mean one, two or more, unless otherwise specifically defined. The terms "first", "second", "third", etc. are only used for naming the components or embodiments by numbers for the convenience of description, and do not imply an important order among the components or embodiments.
[0034] It should also be noted that in the attached drawings of the specification of the present application, an arrow marked with X indicates the first direction or its opposite direction, and an arrow marked with Y indicates the second direction or its opposite direction. In the description of the present application, the introduction of the first direction and the second direction is to more clearly define the structure and relative position relationship of each component in the wafer processing apparatus. In actual implementation, the first direction is generally the vertical direction or the height direction, and the second direction is generally the horizontal direction or the radial direction, and the first direction and the second direction intersect with each other. Optionally, the first direction and the second direction are perpendicular to each other to optimize the layout of the wafer processing apparatus. In the description of the present application, "perpendicular" means completely perpendicular at 90° or almost completely perpendicular. For example, within the range of an included angle of 80° to 100°, it is considered perpendicular. Similarly, "parallel" means completely parallel or almost completely parallel. For example, within a range of 10° of complete parallelism, it is considered parallel.
[0035] As a preamble to the embodiments of the present application, the wafer processing apparatus includes a base and a carrier assembly. In order to ensure uniform reaction of the substrate on the carrier assembly, it is necessary to drive the carrier assembly to rotate relative to the base. Usually, the carrier assembly carries the substrate and is disposed in the receiving groove of the base. By injecting air-floating gas between the carrier assembly and the bottom wall of the receiving groove and making the gas flow in a set direction, the suspension and rotation of the carrier assembly are achieved. However, when using air-floating gas to drive the carrier assembly to rotate, the air-floating gas will enter the reaction chamber formed by the carrier assembly and the cover plate assembly along the gap between the carrier assembly and the base, which is likely to cause airflow disturbances of different sizes around the substrate and affect the reaction quality between the substrate surface and the reaction gas.
[0036] In view of this, an embodiment of the present application provides a wafer processing apparatus, aiming to solve at least one of the above technical problems.
[0037] Please refer to Figures 1 to 3 As shown, the wafer processing apparatus in the embodiment of the present application includes a base 1 and a carrier assembly 2. The base 1 has a receiving groove 10. The receiving groove 10 has a bottom wall 101 and a side wall 102. The base 1 has a first direction X, and the side wall 102 extends along the first direction X from the plane where the bottom wall 101 is located; the carrier assembly 2 is disposed in the receiving groove 10. A gap 3 is provided between the outer peripheral wall 21 of the carrier assembly 2 and the side wall 102; a return groove 4 is provided on the side wall 102 and / or the outer peripheral wall 21 of the carrier assembly 2. The return groove 4 has a groove wall 40 and a groove opening 400. The groove opening 400 is located on the side wall 102 and / or the outer peripheral wall 21 of the carrier assembly 2 and is communicated with the gap 3. Along the first direction X, the maximum distance between the groove wall 40 and the bottom wall 101 is a mm, and the maximum distance between the groove opening 400 of the return groove 4 and the bottom wall 101 is b mm, satisfying: a > b; the minimum distance between the groove wall 40 and the bottom wall 101 is equal to the minimum distance between the groove opening 400 and the bottom wall 101.
[0038] It should be understood that, in some embodiments, the base 1 in the present application may be an integral structure (reference may be made to Figure 2 ), which forms a reaction chamber with the cover plate assembly to provide a space for the reaction gas to react with the substrate surface; a receiving groove 10 is formed on the upper surface of the base 1 for placing the carrier assembly 2 to achieve the loading of the substrate; in some embodiments, the base 1 may be a split structure, generally including a base body and an inner plate and an outer plate (not shown) provided on the base body, and the receiving groove 10 is jointly enclosed by the base body, the inner plate and the outer plate, and the notch 400 faces the cover plate assembly; in other embodiments, the base body and the inner plate may be an integral structure (reference may be made to Figure 1 ), and the outer plate is detachably provided (the structure of the outer plate is not shown in the figure). It should also be understood that, in some embodiments, the carrier assembly 2 is an integral structure and is received in the receiving groove 10, and it can carry the substrate to be transferred together; in other embodiments, the carrier assembly 2 may include a disk body and a ring body, and the ring body is sleeved on one side of the disk body away from the bottom wall 101 of the receiving groove 10, and the two jointly achieve the loading of the substrate, and only the ring body is used to carry the substrate to be transferred.
[0039] In the present application, please refer to Figure 3 、 Figures 5 to 8 as shown, the maximum distance between the groove wall 40 and the bottom wall 101 is expressed as: along the first direction X, the distance between the position on the groove wall 40 farthest from the bottom wall 101 and the bottom wall 101; similarly, the maximum distance between the notch 400 and the bottom wall 101 is expressed as: along the first direction X, the distance between the position on the notch 400 farthest from the bottom wall 101 and the bottom wall 101; when a is greater than b, it means that: along the first direction X, at least a part of the groove wall 40 is located on the side of the notch 400 away from the bottom wall 101, that is, the internal space of the return groove 4 extends obliquely upward to the notch 400. Furthermore, the minimum distance between the groove wall 40 and the notch 400 from the bottom wall 101 is equal, indicating that the internal space of the return groove 4 does not extend obliquely downward to the notch 400. By providing the return groove 4 on the side wall 102 of the base 1 and / or on the outer peripheral wall 21 of the carrier assembly 2, when the air floating gas in the gap 3 flows through the return groove 4, a flow division can be formed, and the flow division flows along the groove wall 40. Since the groove wall 40 substantially forms a return structure, the air floating gas flowing into the return groove 4 can be guided to flow back, so that the air floating gas flows back into the gap 3 and flows in the direction opposite to the first direction X, thereby forming a flow blocking effect in the gap 3 to reduce the overflow of the air floating gas from the gap 3 into the reaction chamber and avoid the interference of the reaction gas around the substrate by the air flow, ensuring the reaction quality of the substrate.
[0040] It should be understood that when the side wall 102 and / or the outer peripheral wall 21 of the carrier assembly 2 are both provided with the return groove 4, a better flow blocking effect can be formed in the gap 3. It should also be understood that the return groove 4 cannot completely guide the aerostatic gas in the gap 3 to flow back, and there will still be a small amount of aerostatic gas flowing into the reaction chamber through the gap 3, thereby avoiding the reaction gas in the reaction chamber from entering the gap 3, causing unnecessary corrosion and pollution inside the gap 3, and avoiding the accumulation of particulate matter, which affects the relative rotation of the carrier assembly 2 and the base 1.
[0041] In some embodiments, please refer to Figure 6 and Figure 8 As shown, the notch 400 has an upper edge 4001 and a lower edge 4002. The upper edge 4001 and the lower edge 4002 are arranged oppositely along the first direction X. The groove wall 40 extends from the lower edge 4002 to the upper edge 4001. The groove wall 40 includes a first diversion section 401 and a second diversion section 402 arranged front and back along the extension direction. The first diversion section 401 is connected to the lower edge 4002, and the second diversion section 402 is connected to the upper edge 4001. And along the extension direction, the distance between the first diversion section 401 and the bottom wall 101 gradually increases, and the distance between the second diversion section 402 and the bottom wall 101 gradually decreases. It can be understood that the upper edge 4001 is located on the side of the lower edge 4002 away from the bottom wall 101. The purpose of defining the positions of the upper edge 4001 and the lower edge 4002 in this application is to define the extension direction of the groove wall 40 and further illustrate the structure of the return groove 4 in this application, and it does not specifically refer to the upper edge 4001 located above and the lower edge 4002 located below. It can be further explained that on the extension path of the groove wall 40, the included angle between the extension direction of the first diversion section 401 and the first direction X is not greater than 90 degrees, and the included angle between the extension direction of the second diversion section 402 and the first direction X is greater than 90 degrees; when the aerostatic gas passes through the notch 400 of the return groove 4, the aerostatic gas is split into a main stream flowing along the first direction X and a tributary flowing into the return groove 4 and guided by the first diversion section 401 and the second diversion section 402. It should be understood that the first diversion section 401 of this embodiment extends in a direction away from the bottom wall 101 to guide the tributary gas to the bottom of the return groove 4; the second diversion section 402 extends in a direction towards the bottom wall 101 to guide the tributary gas to the notch 400 and in the opposite direction to the main flow direction of the first direction X, thereby blocking the main stream.
[0042] In some embodiments, the groove wall 40 further includes a third diversion section (not shown in the figure). The third diversion section is respectively connected to the first diversion section 401 and the second diversion section 402, and the distance between the third diversion section and the bottom wall 101 remains unchanged. It should be understood that the third diversion section is transitionally connected between the first diversion section 401 and the second diversion section 402. The air flotation gas is guided from the first diversion section 401 to the third diversion section, then from the third diversion section to the second diversion section 402, and finally returns to the groove opening 400. On the one hand, the third diversion section can guide the air flotation gas to flow in the reverse direction of the extension direction of the first diversion section 401 to form a reflux; on the other hand, the third diversion section can reduce the air flow resistance between the first diversion section 401 and the second diversion section 402, avoiding excessive air flow resistance near the intersection of the first diversion section 401 and the second diversion section 402, so that the flow rate of the branch gas entering the reflux groove 4 decreases, and the flow velocity of the branch gas flowing out of the reflux groove 4 decreases, affecting the blocking effect on the mainstream gas.
[0043] In some embodiments, the reflux groove 4 is disposed around the outer peripheral wall 21 and / or the side wall 102 of the carrying component 2. It should be understood that the reflux groove 4 has an annular structure (as Figure 4 shown), which can improve the stability of the carrying component 2, thereby avoiding contact and friction with the side wall 102 of the accommodation groove 10 during the rotation of the carrying component 2 relative to the base 1.
[0044] In some embodiments, the carrying component 2 has a carrying surface 22, the wafer processing device has a second direction Y, and the process gas flows through the carrying surface 22 along the second direction Y; along the second direction Y, the side wall 102 includes a first wall section 1021 located upstream of the carrying component 2 and a second wall section 1022 located downstream of the carrying component 2, and the reflux groove 4 is opened on the first wall section 1021. It should be understood that in this embodiment, the process gas flows from the middle of the base 1 in the radial direction to the edge position of the base 1 (as Figure 3As shown, that is, the second direction Y can be the radial direction of the base 1. When a plurality of accommodation grooves 10 are provided and are circumferentially spaced along the base 1, the number of the bearing components 2 corresponds to that of the accommodation grooves 10. Correspondingly, in this embodiment, the return groove 4 is an arc structure. By providing the return groove 4 on the first wall section 1021 upstream of the bearing component 2, the flow rate of the air-bearing gas overflowing from the gap 3 upstream of the bearing component 2 is reduced, thereby reducing the airflow interference of the air-bearing gas on the reaction gas, ensuring the purity of the reaction gas flowing through the substrate, and guaranteeing the substrate reaction quality. In other embodiments, for example, when the process gas flows horizontally from one end of the reaction chamber to the other end of the reaction chamber, especially when only one accommodation groove is provided on the base (not shown), in this case, the rotation of the bearing component in the accommodation groove can replace the rotation of the base to achieve the purpose of uniform growth of the wafer. In this case, the above-mentioned return groove can also be provided only on the upstream wall section of the side wall of the accommodation groove where the bearing component is located, so as to reduce the flow rate of the air-bearing gas overflowing from the gap upstream of the bearing component, and further ensure the quality of substrate processing.
[0045] In some embodiments, please refer to Figure 3 As shown, the arc length of the first wall section 1021 is c mm, and the arc length of the second wall section 1022 is d mm, satisfying: c ≥ d. It should be understood that the arc length of the first wall section 1021 is greater than that of the second wall section 1022, so as to ensure that the projection of the first wall section 1021 on the plane perpendicular to the second direction Y can completely cover the projection of the second wall section 1022 on the plane perpendicular to the second direction Y, thereby ensuring that the flow rate of the air-bearing gas overflowing from the gap 3 upstream of the bearing component 2 will not cause airflow interference to the reaction gas flowing through the substrate surface, and ensuring the substrate reaction quality.
[0046] In some embodiments, please refer to Figure 5 and Figure 6 As shown, along the first direction X, the notch 400 has a first dimension e mm, and the spacing dimension between the outer peripheral wall 21 of the bearing component 2 and the side wall 102 is f mm, satisfying: e ≥ f. It should be understood that the first dimension of the notch 400 can represent the spacing between the upper edge 4001 and the lower edge 4002 of the notch 400 along the first direction X. When e is greater than f, the air-bearing gas in the gap 3 surrounded by the side wall 102 and the outer peripheral wall 21 of the bearing component 2 can be more diverted into the return groove 4 when passing through the notch 400 of the return groove 4, and form a return flow in the return groove 4, so as to ensure that the tributary guided by the return groove 4 can form a sufficiently large airflow barrier, thereby being able to block the mainstream flowing along the first direction X. It should be understood that the larger the dimension of the notch 400 along the first direction X, the better the flow blocking effect on the air-bearing gas flowing along the first direction X in the gap 3.
[0047] In some embodiments, please refer toFigures 5 to 10 As shown, a sunken groove 1011 is formed in the bottom wall 101. The sunken groove 1011 is arranged around the periphery of the bottom wall 101, and the opening 1010 of the sunken groove 1011 faces the outer edge of the bearing component 2 and communicates with the gap 3. It should be understood that the sunken groove 1011 is formed on the bottom wall 101 and communicates with the gap 3. The projection of the gap 3 on the bottom wall 101 along the first direction X is located within the sunken groove 1011. The purpose is to accommodate and buffer the air-floating gas to avoid disturbing the flow direction of the air-floating gas between the bottom wall 101 and the bearing component 2, and ensure that the air-floating gas can normally drive the bearing component 2 to rotate relative to the base 1.
[0048] In some embodiments, please refer to Figures 1 to 2 As shown, a gas discharge channel 5 is further provided inside the base 1. The gas discharge channel 5 communicates with the sunken groove 1011. It should be understood that the sunken groove 1011 not only plays a role in accommodating and buffering the air-floating gas, but also can guide the air-floating gas into the gas discharge channel 5, so as to smoothly discharge the air-floating gas, ensure the flow of the air-floating gas between the bottom wall 101 and the bearing component 2, and be able to drive the bearing component 2 to rotate relative to the base 1.
[0049] In some embodiments, a plurality of return grooves 4 (not shown in the figure) are provided on the side wall 102 or the outer peripheral wall 21 of the bearing component 2. Along the first direction X, a plurality of notches 400 are arranged at intervals. It should be understood that the return groove 4 can be provided on either the side wall 102 or the outer peripheral wall 21 of the bearing component 2, and a plurality of return grooves 4 are provided to form a more stable blocking effect on the air-floating gas in the gap 3. At the same time, further reduce the air-floating gas overflowing from the gap 3 into the reaction chamber, avoid the reaction gas around the substrate being disturbed by the air flow, and ensure the reaction quality of the substrate.
[0050] In some embodiments, please refer to Figure 9 and Figure 10 As shown, return grooves 4 are provided on both the side wall 102 and the outer peripheral wall 21 of the bearing component 2. The return grooves 4 provided on the side wall 102 and the return grooves 4 provided on the outer peripheral wall 21 are arranged staggeredly in the first direction X. It should be understood that return grooves 4 can be provided on both the side wall 102 and the outer peripheral wall 21 of the bearing component 2, and are arranged staggeredly in the first direction X. On the one hand, by providing return grooves 4 on the side wall 102 and the outer peripheral wall 21 of the bearing component 2, the utilization rate of the internal space of the gap 3 can be improved, the arrangement quantity of the return grooves 4 can be increased, and a better blocking effect on the air-floating gas in the gap 3 can be formed; on the other hand, the return grooves 4 provided on the side wall 102 and the return grooves 4 provided on the outer peripheral wall 21 are arranged staggeredly in the first direction X, which can reduce the mutual interference between the return grooves 4 on the side wall 102 and the return grooves 4 on the outer peripheral wall 21, avoid the air flow inside the gap 3 from being disordered, and the blocking effect of the return grooves 4 becomes poor or fails.
[0051] In the above embodiments, the descriptions of the respective embodiments have their own emphases. For parts not detailed in a certain embodiment, reference may be made to the relevant descriptions of other embodiments.
[0052] The above has introduced in detail the wafer processing apparatus provided by the embodiments of the present application, and specific examples have been used to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A wafer processing apparatus, characterized in that, Comprising: A base (1), the base (1) having a receiving groove (10), the receiving groove (10) having a bottom wall (101) and a side wall (102), the base (1) having a first direction (X), and the side wall extending from the plane of the bottom wall along the first direction (X); A carrying component (2), the carrying component (2) being disposed in the receiving groove (10), and a gap (3) being provided between the outer peripheral wall (21) of the carrying component (2) and the side wall (102); A return groove (4) is provided on the side wall (102) and / or the outer peripheral wall (21) of the carrying component (2), the return groove (4) having a groove wall (40) and a groove opening (400), the groove opening (400) being located on the outer peripheral wall (21) of the carrying component (2) and / or the side wall (102) and communicating with the gap (3), along the first direction (X), a maximum distance between the groove wall (40) and the bottom wall (101) is a mm, and a maximum distance between the groove opening (400) of the return groove (4) and the bottom wall (101) is b mm, satisfying: a > b; The minimum distance between the groove wall (40) and the bottom wall (101) is equal to the minimum distance between the groove opening (400) and the bottom wall (101).
2. The wafer processing apparatus according to claim 1, wherein The groove opening (400) has an upper edge (4001) and a lower edge (4002), the upper edge (4001) and the lower edge (4002) are arranged along the first direction (X), the groove wall (40) extends from the lower edge (4002) to the upper edge (4001), the groove wall (40) includes a first diversion section (401) and a second diversion section (402) arranged front and back along the extension direction, the first diversion section (401) is connected to the lower edge (4002), the second diversion section (402) is connected to the upper edge (4001), and along the extension direction, the distance between the first diversion section (401) and the bottom wall (101) gradually increases, and the distance between the second diversion section (402) and the bottom wall (101) gradually decreases.
3. The wafer processing apparatus according to claim 1, wherein The return groove (4) is disposed around the outer peripheral wall (21) of the carrying component (2) and / or the side wall (102).
4. The wafer processing apparatus according to claim 1, wherein The carrying component (2) has a carrying surface (22), the wafer processing device has a second direction (Y), and process gas flows through the carrying surface (22) along the second direction (Y); Along the second direction (Y), the side wall (102) includes a first wall section (1021) located upstream of the carrying component (2) and a second wall section (1022) located downstream of the carrying component (2), and the return groove (4) is opened on the first wall section (1021).
5. The wafer processing apparatus according to claim 4, wherein, The arc length of the first wall section (1021) is c mm, and the arc length of the second wall section (1022) is d mm, satisfying: c ≥ d.
6. The wafer processing apparatus according to claim 1, wherein Along the first direction (X), the notch (400) has a first dimension of e mm, and the spacing dimension between the outer peripheral wall (21) of the bearing assembly (2) and the side wall (102) is f mm, satisfying: e ≥ f.
7. The wafer processing apparatus according to claim 1, wherein, The bottom wall (101) is provided with a sunk groove (1011), the sunk groove (1011) is arranged around the periphery of the bottom wall (101), and the opening of the sunk groove (1011) faces the outer edge of the bearing assembly (2) and communicates with the gap (3).
8. The wafer processing apparatus according to claim 7, wherein, A gas discharge channel (5) is further provided inside the base (1), and the gas discharge channel (5) communicates with the sunk groove (1011).
9. The wafer processing apparatus according to claim 1, wherein A plurality of the return grooves (4) are provided on the side wall (102) or the outer peripheral wall (21) of the bearing assembly (2), and along the first direction (X), the plurality of notches (400) are arranged at intervals.
10. The wafer processing apparatus according to claim 1, wherein, Return grooves (4) are provided on both the side wall (102) and the outer peripheral wall (21) of the bearing assembly (2), and the return grooves (4) provided on the side wall (102) and the return grooves (4) provided on the outer peripheral wall (21) are staggered in the first direction (X).