Anti-interference integrated copper substrate

Abstract

The utility model relates to the technical field of integrated copper substrates, in particular to an anti-interference integrated copper substrate, and adopts the technical scheme that the anti-interference integrated copper substrate comprises a copper-based supporting plate, a circuit copper foil, a heat-conducting insulating component, a special-shaped copper bar and an MOS (Metal Oxide Semiconductor) tube, a circuit copper foil is arranged above the copper-based supporting plate, a heat conduction and insulation assembly is arranged between the copper-based supporting plate and the circuit copper foil, a special-shaped copper bar is embedded in the heat conduction and insulation assembly, and an MOS tube is arranged above the heat conduction and insulation assembly; according to the technical scheme of the utility model, the integrated copper substrate with the anti-interference function is designed, and the metal oxide semiconductor (MOS) tube which can directly guide the temperature of the MOS tube to the heat-conducting silica gel and then guide the temperature to the copper-based supporting plate for rapid heat dissipation is additionally arranged at the bottom end of the MOS tube which is liable to cause electromagnetic interference due to high temperature generated by the problem of high-current over-current. Electromagnetic interference caused by high temperature of large-current over-current is avoided, and the service life of the power supply control board is prolonged.

Description

Technical Field

[0001] The utility model belongs to the technical field of integrated copper substrates, and particularly relates to an integrated copper substrate with anti-interference performance. Background Technique

[0002] Copper substrates with good electrical conductivity and heat dissipation characteristics are widely used in high-frequency circuits, areas with large high and low temperature changes, as well as the communication equipment and building decoration industries. Single-sided copper substrates are often used for power control boards that provide current voltage.

[0003] At present, the existing single-sided copper substrates are prone to the problem of large current passing through the MOS tube. Once the MO tube has a large current passing through, it will cause electromagnetic interference or electromagnetic compatibility problems, thus affecting the normal operation of the device.

[0004] Therefore, aiming at the problem that the existing single-sided copper substrates are prone to the problem of large current passing through the MOS tube, resulting in electromagnetic interference and affecting the normal operation of the device, an integrated copper substrate with anti-interference performance is designed to avoid the problem of large current passing through the MOS tube and ensure the normal operation of the power control board. Content of the Utility Model

[0005] In order to overcome the problem that the existing single-sided copper substrates are prone to large current passing through the MOS tube, resulting in electromagnetic interference.

[0006] The technical solution of the utility model is: an integrated copper substrate with anti-interference performance, including a copper base support plate, a circuit copper foil, a heat-conducting and insulating component, a special-shaped copper strip, and a MOS tube; a circuit copper foil is arranged above the copper base support plate, a heat-conducting and insulating component is arranged between the copper base support plate and the circuit copper foil, a special-shaped copper strip is buried inside the heat-conducting and insulating component, and a MOS tube is arranged above the heat-conducting and insulating component.

[0007] Preferably, by installing a copper strip between the bottom end of the MOS tube and the copper base support plate, the high temperature generated by the large current passing through the MOS tube can be quickly transferred and dissipated, avoiding electromagnetic interference caused by the high temperature of the MOS tube, extending the service life. At the same time, the heat-conducting and insulating component can quickly transfer heat while preventing the copper base support plate responsible for heat conduction from conducting electricity with the copper strip.

[0008] As a preference, the heat-conducting and insulating component includes a heat-conducting silica gel layer and an FR4 insulating layer; a heat-conducting silica gel layer matching the copper base support plate is bonded on the copper base support plate, an FR4 insulating layer is bonded above the heat-conducting silica gel layer, the heat-conducting silica gel layer can conduct the temperature to the copper base support plate, and both the FR4 insulating layer and the heat-conducting silica gel layer have good insulation properties, which can avoid guiding current and play a protective role for the copper base support plate.

[0009] Preferably, through slots are formed in the FR4 insulating layer, and the shaped copper bars are inserted into the through slots formed in the FR4 insulating layer. By means of the through slots, the shaped copper bars are buried in the FR4 insulating layer, which can eliminate the step of welding the shaped copper bars. Meanwhile, with such a design, the shaped copper bars are installed below the circuit copper foil.

[0010] Preferably, a circuit copper foil is installed on the FR4 insulating layer, and a MOS transistor electrically connected to the etched circuit on the circuit copper foil is installed on the circuit copper foil. The MOS transistor is a voltage-controlled semiconductor device, which has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, etc. It can be used to achieve unidirectional conduction of the circuit and avoid voltage loss during conduction.

[0011] Preferably, a notch for installing the MOS transistor is formed in the circuit copper foil, and the top end of the shaped copper bar penetrates through the notch of the circuit copper foil and is at the same horizontal plane as the top end of the circuit copper foil. Such a design enables the shaped copper bar to form a heat conduction path between the MOS transistor and the thermal conductive silicone layer, conducting the high temperature generated by the MOS transistor downward.

[0012] Preferably, the bottom end of the MOS transistor installed on the circuit copper foil closely abuts against the top end of the shaped copper bar inserted into the through slot on the FR4 insulating layer. Copper has good thermal conductivity, which can accelerate the speed of heat transfer and flow. Cooperating with other cooling devices can achieve rapid cooling and heat dissipation, and avoid electromagnetic interference caused by the high temperature of the MOS transistor due to large current overvoltage.

[0013] Preferably, the bottom end of the shaped copper bar is at the same horizontal plane as the FR4 insulating layer, and the bottom end of the shaped copper bar is bonded above the thermal conductive silicone layer. According to the principle of heat conduction, temperature will flow from the high-temperature area to the low-temperature area. Copper has good thermal conductivity. When the MOS transistor generates high temperature, the heat will flow downward along the shaped copper bar to the lower temperature area and then flow onto the thermal conductive silicone layer.

[0014] Advantages of the present utility model:

[0015] By designing an integrated copper substrate with anti-interference, a heat sink capable of directly guiding the temperature of the MOS transistor to the thermal conductive silicone and then to the copper base support plate is installed at the bottom end of the MOS transistor, which is prone to electromagnetic interference caused by high temperature due to large current overvoltage problems, avoiding electromagnetic interference caused by the high temperature due to large current overvoltage problems and extending the service life of the power control board;

[0016] The copper bars are buried inside the FR4 and then installed on the copper base support plate. Such an integrated design can eliminate the process of welding the copper bars. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Shown is a first three-dimensional structural schematic diagram of the integrated copper substrate with anti-interference of the present utility model;

[0018] Figure 2 Shown is a three-dimensional schematic diagram of the integrated copper substrate copper-based support plate and thermal conductive silicone layer with anti-interference of the present utility model;

[0019] Figure 3 Shown is a first three-dimensional schematic diagram of the integrated copper substrate FR4 thermal conductive layer and special-shaped copper strip with anti-interference of the present utility model;

[0020] Figure 4 Shown is a second three-dimensional schematic diagram of the integrated copper substrate FR4 thermal conductive layer and special-shaped copper strip with anti-interference of the present utility model;

[0021] Figure 5 Shown is a three-dimensional schematic diagram of the integrated copper substrate FR4 thermal conductive layer with anti-interference of the present utility model

[0022] Explanation of reference numerals in the drawings: 1. Copper-based support plate; 2. Circuit copper foil; 3. Special-shaped copper strip; 4. MOS tube; 501. Thermal conductive silicone layer; 502. FR4 insulating layer; 6. Through groove. Specific embodiments

[0023] The present utility model will be further described below with reference to the drawings and embodiments.

[0024] Please refer to Figures 1-5 , the present utility model provides an embodiment: An integrated copper substrate with anti-interference includes a copper-based support plate 1, a circuit copper foil 2, a thermal conductive insulating component, a special-shaped copper strip 3 and a MOS tube 4; a circuit copper foil 2 is arranged above the copper-based support plate 1, a thermal conductive insulating component is arranged between the copper-based support plate 1 and the circuit copper foil 2, a special-shaped copper strip 3 is buried inside the thermal conductive insulating component, and a MOS tube 4 is arranged above the thermal conductive insulating component. By installing a copper strip between the bottom end of the MOS tube 4 and the copper-based support plate 1, the high temperature generated by the MOS tube 4 due to large current passing through can be quickly transferred and dissipated, avoiding electromagnetic interference caused by the high temperature of the MOS tube 4 and extending the service life. At the same time, the thermal conductive insulating component can quickly transfer heat while preventing the copper-based support plate 1 responsible for heat conduction from conducting electricity with the copper strip.

[0025] Please refer to Figures 1-3, in this embodiment, the heat-conducting and insulating component includes a heat-conducting silica gel layer 501 and an FR4 insulating layer 502; a heat-conducting silica gel layer 501 matching the copper-based support plate 1 is bonded to the copper-based support plate 1, and an FR4 insulating layer 502 is bonded above the heat-conducting silica gel layer 501. A through groove 6 is formed in the FR4 insulating layer 502, and the special-shaped copper bar 3 is inserted into the through groove 6 formed in the FR4 insulating layer 502. A circuit copper foil 2 is installed on the FR4 insulating layer 502, and a MOS transistor 4 electrically connected to the etched circuit on the circuit copper foil 2 is installed on the circuit copper foil 2. The heat-conducting silica gel layer 501 can conduct the temperature to the copper-based support plate 1. Both the FR4 insulating layer 502 and the heat-conducting silica gel layer 501 have good insulation properties, which can avoid guiding current and play a protective role for the copper-based support plate 1. By embedding the special-shaped copper bar 3 in the FR4 insulating layer 502 through the through groove 6, the step of welding the special-shaped copper bar 3 can be omitted. At the same time, such a design installs the special-shaped copper bar 3 below the circuit copper foil 2. The MOS transistor 4 is a voltage-controlled semiconductor device, which has the advantages of high input resistance, low noise, low power consumption, large dynamic range, easy integration, etc., and can be used to realize the single-way conduction of the circuit and avoid voltage loss during conduction.

[0026] Please refer to Figure 1 , Figure 4 , Figure 5 , in this embodiment, a notch for installing the MOS transistor 4 is formed in the circuit copper foil 2. The top end of the special-shaped copper bar 3 penetrates through the notch of the circuit copper foil 2 and is at the same horizontal plane as the top end of the circuit copper foil 2. The bottom end of the MOS transistor 4 installed on the circuit copper foil 2 closely abuts against the top end of the special-shaped copper bar 3 inserted into the through groove 6 on the FR4 insulating layer 502. The bottom end of the special-shaped copper bar 3 is at the same horizontal plane as the FR4 insulating layer 502, and the bottom end of the special-shaped copper bar 3 is bonded above the heat-conducting silica gel layer 501. Such a design enables the special-shaped copper bar 3 to form a heat conduction path between the MOS transistor 4 and the heat-conducting silica gel layer 501, conducting the high temperature generated by the MOS transistor 4 downward. Copper has good heat conductivity, which can accelerate the speed of heat transfer and flow. Cooperating with other cooling devices can achieve rapid cooling and heat dissipation, and avoid electromagnetic interference caused by the high temperature of the MOS transistor 4 due to large current overvoltage. According to the heat conduction principle, temperature will flow from the high-temperature area to the low-temperature area. Copper has good heat conductivity. When the MOS transistor 4 generates high temperature, it will flow downward along the special-shaped copper bar 3 to the lower part with lower temperature, and then flow to the heat-conducting silica gel layer 501.

[0027] When working, first, the staff etch the circuit on the circuit copper foil 2 and open notches. Then, according to the shape of the special-shaped copper bar 3, a through groove 6 that matches it is opened on the FR4 insulating layer 502. The special-shaped copper bar 3 is buried into the through groove 6 opened on the FR4 insulating layer 502. Then, the circuit copper foil 2 is installed and fixed on the FR4 insulating layer 502. The thermal conductive silicone layer 501 is bonded to the copper base support plate 1, the FR4 insulating layer 502 is bonded above the thermal conductive silicone layer 501, and the MOS tube 4 is installed on the circuit copper foil 2;

[0028] After packaging the processed integrated copper substrate, it is transported to the corresponding area. The staff installs the copper base support plate 1 on the power control board. During use, when a large current passes through the MOS tube 4, it will cause the temperature of the MOS tube 4 to rise. These temperatures penetrate into the thermal conductive silicone layer 501 through the copper bar, and then enter the copper base support plate 1 through the thermal conductive silicone layer 501. Due to the good thermal conductivity of copper, the heat is exported through the copper base support plate 1, avoiding electromagnetic interference caused by the excessive temperature generated by the large current passing through the MOS tube 4.

[0029] Through the above steps, an integrated copper substrate with anti-interference is designed. At the bottom of the MOS tube 4, which is prone to electromagnetic interference due to high temperatures caused by large current overvoltage problems, a device is installed that can directly guide the temperature of the MOS tube 4 to the thermal conductive silicone and then to the copper base support plate 1 for rapid heat dissipation, avoiding electromagnetic interference caused by high temperatures due to large current overvoltage problems and extending the service life of the power control board to solve the problem that the existing single-sided copper substrate is prone to large current overvoltage of the MOS tube 4, resulting in electromagnetic interference.

[0030] The above has described the embodiments of the present invention in detail with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the purpose of the present invention.

Claims

1. An integrated copper substrate with anti-interference, comprising a copper-based support plate (1) and a circuit copper foil (2); characterized in that, It also includes a heat-conducting and insulating component, a special-shaped copper strip (3), and a MOS transistor (4); a circuit copper foil (2) is arranged above the copper-based support plate (1), a heat-conducting and insulating component is arranged between the copper-based support plate (1) and the circuit copper foil (2), a special-shaped copper strip (3) is buried and connected inside the heat-conducting and insulating component, and a MOS transistor (4) is arranged above the heat-conducting and insulating component.

2. The integrated copper substrate with anti-interference according to claim 1, characterized in that, The heat-conducting and insulating component includes a heat-conducting silicone layer (501) and an FR4 insulating layer (502); a heat-conducting silicone layer (501) matching the copper-based support plate (1) is bonded on the copper-based support plate (1), and an FR4 insulating layer (502) is bonded above the heat-conducting silicone layer (501).

3. The integrated copper substrate with anti-interference according to claim 2, characterized in that, A through groove (6) is formed in the FR4 insulating layer (502), and the special-shaped copper strip (3) is inserted into the through groove (6) formed in the FR4 insulating layer (502).

4. The integrated copper substrate with anti-interference according to claim 3, characterized in that The circuit copper foil (2) is installed on the FR4 insulating layer (502), and a MOS transistor (4) electrically connected to the etched circuit on the circuit copper foil (2) is installed on the circuit copper foil (2).

5. The integrated copper substrate with anti-interference according to claim 4, characterized in that, A notch for installing the MOS transistor (4) is formed in the circuit copper foil (2), and the top end of the special-shaped copper strip (3) penetrates through the notch of the circuit copper foil (2) and is at the same horizontal plane as the top end of the circuit copper foil (2).

6. The integrated copper substrate with anti-interference according to claim 5, characterized in that The bottom end of the MOS transistor (4) installed on the circuit copper foil (2) closely abuts against the top end of the special-shaped copper strip (3) inserted into the through groove (6) in the FR4 insulating layer (502).

7. The integrated copper substrate with anti-interference according to claim 6, characterized in that, The bottom end of the special-shaped copper strip (3) is at the same horizontal plane as the FR4 insulating layer (502), and the bottom end of the special-shaped copper strip (3) is bonded above the heat-conducting silicone layer (501).

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