Light-emitting main body easy to dissipate heat and semiconductor laser with light-emitting main body

Abstract

The utility model relates to a light-emitting main body easy to dissipate heat and a semiconductor laser with the light-emitting main body, and belongs to the technical field of semiconductor lasers. Different slow-axis collimating lenses are selected for the semiconductor laser, due to the fact that the working distances of different types of slow-axis collimating lenses are different, staggered distribution of semiconductor chips in the horizontal direction can be achieved, heat sources in unit area are dispersed through staggered distribution of the semiconductor chips, and therefore the overall heat dissipation efficiency of the module is improved.

Description

Technical Field

[0001] The utility model relates to a light-emitting body which is easy to dissipate heat and a semiconductor laser with the light-emitting body, belonging to the technical field of semiconductor lasers. Background Art

[0002] The heat dissipation design of high-power semiconductor lasers is one of the core aspects of current laser design, and the heat dissipation structure is of great significance to the power output of high-power semiconductor lasers. The packaging structure of high-power semiconductor lasers mainly involves directly bonding the laser chip to a heat sink made of copper. Due to the mismatch between the coefficient of thermal expansion (CTE) of copper and the semiconductor chip, a buffer layer and indium tin solder are required to reduce thermal stress damage to the semiconductor chip and improve heat dissipation.

[0003] Furthermore, the poor heat dissipation of current high-power lasers is partly due to the dense arrangement of semiconductor laser chips. With the increasing power demand for semiconductor lasers and the improvement of the overall power-to-weight and power-to-volume ratios in the semiconductor laser field, the weight and volume of semiconductor lasers are constantly decreasing. However, this reduction in laser volume leads to a dense arrangement of chips within the semiconductor laser, which results in an overly concentrated heat source and further weakens the heat dissipation capacity. Therefore, the present invention is proposed. Summary of the Invention

[0004] In view of the shortcomings of the existing technology, the utility model provides a light-emitting body that is easy to dissipate heat and a semiconductor laser with a light-emitting body, which can solve the heat dissipation problem of the existing semiconductor laser under the same power-to-volume ratio and achieve better heat dissipation effect.

[0005] By selecting different slow-axis collimating lenses (including ordinary slow-axis collimating lenses, slow-axis beam expanding collimating lenses and split slow-axis beam expanding lenses, the focal lengths of different types of slow-axis collimating lenses are the same, and only the working distance is changed, so the light spot after collimation is consistent), and due to the different working distances of different types of slow-axis collimating lenses, the staggered distribution of semiconductor chips in the horizontal direction can be achieved (semiconductor chips are the main light-emitting heat source). The staggered distribution of semiconductor chips disperses the heat source per unit area, thereby improving the overall heat dissipation efficiency of the module.

[0006] The technical solution of the utility model is as follows:

[0007] A light-emitting body that is easy to dissipate heat comprises a body A, a body B, a body C and a body D, wherein body A comprises a semiconductor chip, a fast-axis collimating lens, a slow-axis collimating lens and a first reflector arranged in sequence along an optical path; the slow-axis collimating lens used in body A is an existing commonly used single-curved lens and is not improved;

[0008] Body B includes a semiconductor chip, a fast-axis collimating lens, a slow-axis beam-expanding collimating lens, and a first reflector, which are sequentially designed along the optical path. The slow-axis beam-expanding collimating lens is a hyperbolic lens that can expand the beam in advance and shorten the working distance at the same focal length.

[0009] The main body C includes a semiconductor chip, a fast-axis collimating lens, a first slow-axis beam expanding lens group, and a first reflector. The first slow-axis beam expanding lens group includes a convex cylindrical mirror for collimation after beam expansion and a concave cylindrical mirror for beam expansion of the light spot. The semiconductor chip, the fast-axis collimating lens, the concave cylindrical mirror, the first reflector, and the convex cylindrical mirror are arranged in sequence along the optical path.

[0010] The main body D includes a semiconductor chip, a fast-axis collimating lens, a second slow-axis beam expanding lens group and a first reflector. The second slow-axis beam expanding lens group includes a convex cylindrical mirror for collimation after beam expansion and a concave cylindrical mirror for beam expansion of the light spot. The semiconductor chip, the fast-axis collimating lens, the first reflector, the concave cylindrical mirror and the convex cylindrical mirror are arranged in sequence along the optical path.

[0011] According to the preferred embodiment of the present invention, the slow axis collimating lens of the body A has a focal length of 14 mm and a working distance of 13.5 mm;

[0012] The slow-axis beam expander collimator lens of body B has a focal length of 14 mm and a working distance of 8.5 mm;

[0013] The focal length of the first slow-axis beam expander lens group of body C is 14mm, and the working distance is 6mm;

[0014] The focal length of the second slow axis beam expander lens group of body D is 14 mm and the working distance is 6 mm.

[0015] A semiconductor laser with the above-mentioned light-emitting body that is easy to dissipate heat, comprising a stepped heat sink, a body A, a body B, a body C, a body D, and a coupling lens. The bodies A, B, C, and D are located on steps of different heights on the stepped heat sink, with the heights increasing in sequence to avoid interference. The light output directions of the bodies A, B, C, and D are the same, and a coupling lens is provided on the light output side of the body A.

[0016] The first reflectors of the main body A, main body B, main body C and main body D on the upper side of the stepped heat sink are arranged in a straight line, and the main body D and main body C share a convex cylindrical mirror.

[0017] The shared convex cylindrical mirror has two effects: (1) it can reduce the use of one lens and improve the power; (2) it can further reduce the vertical optical path of the semiconductor chip of the main body D, thereby further dispersing the light source.

[0018] In specific applications, main body A, main body B, main body C, and main body D are regarded as a unit. Multiple units emit light together to increase power. The specific number is combined according to demand.

[0019] A semiconductor laser with the above-mentioned light-emitting body that is easy to dissipate heat, comprising a stepped heat sink, a body A, a body B, a body C, a body D, and a coupling lens. The body D is disposed in the middle of the stepped heat sink, and the bodies C, B, and A are disposed on the stepped heat sinks on both sides of the body D, respectively. A coupling lens is disposed on the outer side of the body A at the light-emitting side.

[0020] The first reflectors of all the main bodies A, B, C and D on the upper side of the stepped heat sink are arranged in a straight line, and the main body D and the main body C on the light-emitting side share a convex cylindrical mirror.

[0021] In specific applications, 7 main bodies are used as a unit, and multiple units emit light together to increase power. The specific number is combined according to needs.

[0022] A semiconductor laser with the above-mentioned light-emitting body that is easy to dissipate heat, includes a stepped heat sink, a first column of light-emitting structures, a second column of light-emitting structures, a second reflector, a polarization beam combiner, a fast-slow axis compression mirror and a coupling lens. The first column of light-emitting structures includes a body A and a body B. Several bodies A and B are arranged in sequence from bottom to top on the stepped heat sink, and the bodies A and B are arranged at intervals. The second column of light-emitting structures is the same as the first column of light-emitting structures. The light-emitting side of the first column of light-emitting structures is provided with a second reflector. The light-emitting side of the second column of light-emitting structures is provided with a polarization beam combiner. The light-emitting side of the second reflector faces the polarization beam combiner. The light-emitting side of the polarization beam combiner is provided with a fast-slow axis compression mirror and a coupling lens.

[0023] In specific applications, the first column of light-emitting structures and the second column of light-emitting structures are not limited to the combination of body A and body B, and can be freely arranged with reference to the other two semiconductor laser combinations mentioned above.

[0024] The beneficial effects of the present invention are:

[0025] 1. The structure of the present invention realizes that under the condition of equal focal length, the working distance decreases successively, so that the semiconductor chips can be distributed in a diagonal shape as the working distance changes. That is, under the condition of equal number, the semiconductor chips are staggered. The staggered distribution of the semiconductor chips disperses the heat source per unit area, thereby greatly improving the heat dissipation efficiency of the semiconductor module.

[0026] 2. The present invention reconstructs the existing semiconductor laser. The semiconductor chips of the current mainstream semiconductor laser are mainly arranged in a row at a certain distance, such as Figure 1 As shown, the present invention changes the arrangement of semiconductor chips in a row, thereby improving the heat dissipation of the semiconductor laser. The improvement of the heat dissipation is more conducive to improving the overall electro-optical efficiency and power of the semiconductor laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic diagram of the structure of an existing semiconductor laser.

[0028] Figure 2 It is a structural diagram of embodiment 1 of the present invention.

[0029] Figure 3 It is a structural diagram of embodiment 2 of the present invention.

[0030] Figure 4 It is a structural diagram of embodiment 3 of the present invention.

[0031] Among them: 1. Semiconductor chip A; 2. Fast-axis collimating lens; 3. Slow-axis collimating lens; 4. First reflector A; 5. Semiconductor chip B; 6. Slow-axis beam expander collimating lens; 7. First reflector B; 8. Semiconductor chip C; 9. First concave cylindrical mirror; 10. First reflector C; 11. Semiconductor chip D; 12. Second concave cylindrical mirror; 13. First reflector D; 14. Coupling lens; 15. Second reflector; 16. Polarization beam combiner; 17. Fast-slow axis compression mirror; 18. Convex cylindrical mirror. DETAILED DESCRIPTION

[0032] The present invention will be further described below through embodiments and in conjunction with the accompanying drawings, but is not limited thereto.

[0033] Example 1:

[0034] like Figure 1 As shown, this embodiment provides a light-emitting body that is easy to dissipate heat, including body A, body B, body C, and body D. Body A includes a semiconductor chip A1, a fast-axis collimating lens 2, a slow-axis collimating lens 3, and a first reflector A4, which are sequentially arranged along the optical path. The slow-axis collimating lens used in body A is an existing commonly used single-curved lens and is not improved.

[0035] The main body B includes a semiconductor chip B5, a fast-axis collimating lens, a slow-axis beam-expanding collimating lens 6, and a first reflector B7, which are sequentially arranged along the optical path. The slow-axis beam-expanding collimating lens 6 is a hyperbolic lens that can expand the beam in advance and shorten the working distance at the same focal length.

[0036] The main body C includes a semiconductor chip C8, a fast-axis collimating lens, a first slow-axis beam expanding lens group, and a first reflector C10. The first slow-axis beam expanding lens group includes a convex cylindrical mirror 18 for collimation after beam expansion and a first concave cylindrical mirror 9 for beam expansion of the light spot. The semiconductor chip C, the fast-axis collimating lens, the first concave cylindrical mirror 9, the first reflector C10, and the convex cylindrical mirror 18 are arranged in sequence along the optical path.

[0037] The main body D includes a semiconductor chip D11, a fast-axis collimating lens, a second slow-axis beam expanding lens group and a first reflector D13. The second slow-axis beam expanding lens group includes a convex cylindrical mirror for collimation after beam expansion and a second concave cylindrical mirror 12 for beam expansion of the light spot. The semiconductor chip D, the fast-axis collimating lens, the first reflector D13, the second concave cylindrical mirror 12 and the convex cylindrical mirror are arranged in sequence along the optical path.

[0038] The slow-axis collimating lens of body A has a focal length of 14 mm and a working distance of 13.5 mm;

[0039] The slow-axis beam expander collimator lens 6 of body B has a focal length of 14 mm and a working distance of 8.5 mm;

[0040] The focal length of the first slow-axis beam expander lens group of body C is 14mm, and the working distance is 6mm;

[0041] The focal length of the second slow axis beam expander lens group of body D is 14 mm and the working distance is 6 mm.

[0042] A semiconductor laser with the above-mentioned light-emitting body that is easy to dissipate heat, such as Figure 2 As shown, it includes a stepped heat sink, a main body A, a main body B, a main body C, a main body D and a coupling lens 14. The main body A, the main body B, the main body C and the main body D are arranged side by side on steps of different heights of the stepped heat sink, and the heights increase in sequence to avoid interference. The light output directions of the main bodies A, B, C and D are the same, and a coupling lens 14 is provided on the light output side of the main body A;

[0043] The first reflector A4 , the first reflector B7 , the first reflector C10 and the first reflector D13 on the upper side of the stepped heat sink are arranged in a straight line, and the main body D and the main body C share the convex cylindrical mirror 18 .

[0044] The shared convex cylindrical mirror has two effects: (1) it can reduce the use of one lens and improve the power; (2) it can further reduce the vertical optical path of the semiconductor chip of the main body D, thereby further dispersing the light source.

[0045] Example 2:

[0046] A semiconductor laser with a light-emitting body that is easy to dissipate heat as described in Example 1, such as Figure 3 As shown, it includes a stepped heat sink, a main body A, a main body B, a main body C, a main body D and a coupling lens 14. The main body D is arranged in the middle of the stepped heat sink, and the main body C, the main body B and the main body A are respectively arranged on the stepped heat sinks on both sides of the main body D. A coupling lens is arranged on the outer side of the main body A at the light-emitting side.

[0047] Example 3:

[0048] A semiconductor laser with a light-emitting body that is easy to dissipate heat as described in Example 1, such as Figure 4 As shown, it includes a stepped heat sink, a first column of light-emitting structures, a second column of light-emitting structures, a second reflector 15, a polarization beam combiner 16, a fast-slow axis compression mirror 17 and a coupling lens 14. The first column of light-emitting structures includes a main body A and a main body B. Several main bodies A and main bodies B are arranged on the stepped heat sink from bottom to top, and the main bodies A and main bodies B are arranged at intervals. The second column of light-emitting structures is the same as the first column of light-emitting structures. The light-emitting side of the first column of light-emitting structures is provided with a second reflector 15, and the light-emitting side of the second column of light-emitting structures is provided with a polarization beam combiner 16. The light-emitting side of the second reflector 15 faces the polarization beam combiner 16, and the light-emitting side of the polarization beam combiner 16 is provided with a fast-slow axis compression mirror 17 and a coupling lens 14.

Claims

1. A light-emitting body that is easy to dissipate heat, characterized in that: It includes a main body A, a main body B, a main body C and a main body D, wherein the main body A includes a semiconductor chip, a fast-axis collimating lens, a slow-axis collimating lens and a first reflecting mirror designed in sequence along the optical path; The main body B includes a semiconductor chip, a fast-axis collimating lens, a slow-axis beam expanding collimating lens and a first reflector, which are sequentially designed along the optical path. The slow-axis beam expanding collimating lens is a hyperbolic lens. The main body C includes a semiconductor chip, a fast-axis collimating lens, a first slow-axis beam expanding lens group and a first reflecting mirror. The first slow-axis beam expanding lens group includes a convex cylindrical mirror and a concave cylindrical mirror. The semiconductor chip, the fast-axis collimating lens, the concave cylindrical mirror, the first reflecting mirror and the convex cylindrical mirror are arranged in sequence along the optical path. The main body D includes a semiconductor chip, a fast-axis collimating lens, a second slow-axis beam expanding lens group and a first reflecting mirror. The second slow-axis beam expanding lens group includes a convex cylindrical mirror and a concave cylindrical mirror. The semiconductor chip, the fast-axis collimating lens, the first reflecting mirror, the concave cylindrical mirror and the convex cylindrical mirror are arranged in sequence along the optical path.

2. The light-emitting body that is easy to dissipate heat according to claim 1, characterized in that: The slow-axis collimating lens of body A has a focal length of 14 mm and a working distance of 13.5 mm; The slow-axis beam expander collimator lens of body B has a focal length of 14 mm and a working distance of 8.5 mm; The focal length of the first slow-axis beam expander lens group of body C is 14mm, and the working distance is 6mm; The focal length of the second slow axis beam expander lens group of body D is 14 mm and the working distance is 6 mm.

3. A semiconductor laser having a light-emitting body that is easy to dissipate heat as claimed in claim 2, characterized in that: It includes a stepped heat sink, a main body A, a main body B, a main body C, a main body D and a coupling lens. The main body A, the main body B, the main body C and the main body D are located on steps of different heights of the stepped heat sink. The main body A, the main body B, the main body C and the main body D have the same light output direction. A coupling lens is provided on the light output side of the main body A. The first reflectors of the main body A, main body B, main body C and main body D on the upper side of the stepped heat sink are arranged in a straight line, and the main body D and main body C share a convex cylindrical mirror.

4. A semiconductor laser having a light-emitting body that is easy to dissipate heat as claimed in claim 2, characterized in that: It includes a stepped heat sink, a main body A, a main body B, a main body C, a main body D and a coupling lens. The main body D is arranged in the middle of the stepped heat sink. The main body C, main body B and main body A are respectively arranged on the stepped heat sinks on both sides of the main body D. A coupling lens is arranged on the outer side of the main body A at the light output side. The first reflectors of all the main bodies A, B, C and D on the upper side of the stepped heat sink are arranged in a straight line, and the main body D and the main body C on the light-emitting side share a convex cylindrical mirror.

5. A semiconductor laser having a light-emitting body that is easy to dissipate heat as claimed in claim 2, characterized in that: It includes a stepped heat sink, a first column of light-emitting structures, a second column of light-emitting structures, a second reflector, a polarization beam combiner, a fast-slow axis compression mirror and a coupling lens. The first column of light-emitting structures includes a main body A and a main body B. Several main bodies A and B are arranged on the stepped heat sink from bottom to top, and the main bodies A and B are arranged at intervals. The second column of light-emitting structures is the same as the first column of light-emitting structures. The light-emitting side of the first column of light-emitting structures is provided with a second reflector, the light-emitting side of the second column of light-emitting structures is provided with a polarization beam combiner, the light-emitting side of the second reflector faces the polarization beam combiner, and the light-emitting side of the polarization beam combiner is provided with fast-slow axis compression mirrors and a coupling lens.

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