Linear polarization Micro-LED with high extinction ratio

Abstract

The utility model relates to a 3D display technology, in particular to a high extinction ratio linear polarized light Micro-LED, which comprises an unetched area and a table top, silicon dioxide passivation layers are deposited on the top of the unetched area, the outer side wall of the table top and the top of the table top, the periphery of the top of the table top is provided with an abdicating step on the silicon dioxide passivation layer, and the abdicating step is arranged on the outer side wall of the table top. According to the utility model, the silicon dioxide passivation layers are deposited on the top of the non-etched area, the outer side wall of the table top and the top of the table top, and then the abdicating step is formed on the periphery of the top of the table top after silicon dioxide passivation, so that the top of the ITO layer is covered with the silicon dioxide passivation layer, and the preparation of the silicon dioxide transition layer is completed without additional process; and the silicon dioxide layer can also play a role of an antireflection film, so that the light transmittance is increased, and the luminous efficiency of the linearly polarized Micro-LED is improved.

Description

Technical Field

[0001] The utility model relates to a 3D display technology, in particular to a linearly polarized Micro-LED with a high extinction ratio. Background Art

[0002] As an inorganic light-emitting diode display technology, Micro-LED is considered a highly competitive and promising candidate for the next generation of display technology. Micro-LED chips share many of the same characteristics as today's LED chips, but the pixel size of Micro-LED displays has been reduced to the micron level. Therefore, this micro-display technology not only inherits the high luminous efficiency, high stability, and extremely long service life of traditional LED displays, but also, thanks to its reduced size, achieves ultra-high resolution, low power consumption, and high brightness, advantages that other display technologies cannot match. People quickly thought of applying Micro-LED to 3D displays, which could transform the advantages of Micro-LED displays into advanced 3D displays.

[0003] Polarized 3D display technology is currently the mainstream stereoscopic display technology, offering a strong sense of 3D perception, relatively low production costs, and a relatively high market share. Its principle is to simultaneously display the right and left eye images on the screen with different polarization states. Through polarized glasses, the images are received by the left and right eyes, respectively, creating binocular parallax and achieving 3D display. Currently, micro-LEDs used for polarized 3D display primarily integrate a metal grating on the top of the micro-LED. Light passing through the metal grating is polarized, but this presents two major issues. First, the metal grating blocks some light, resulting in low efficiency and brightness loss. Second, significant light leakage occurs along the sidewalls of the micro-LED and through the sapphire crystal. This leaked light does not pass through the metal grating on the top of the micro-LED, so it is unpolarized, which reduces the extinction ratio of polarized light. These issues severely impact the display quality of polarized micro-LEDs.

[0004] Therefore, those skilled in the art are committed to developing a method to improve the brightness of polarized light Micro-LEDs, reduce light leakage, and improve the extinction ratio of the device, so as to better realize the array display of polarized light Micro-LEDs. Utility Model Content

[0005] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a method for improving the brightness of polarized light Micro-LED, reducing light leakage, and improving the extinction ratio of the device, so as to better realize the array display of polarized light Micro-LED.

[0006] To achieve the above objectives, the present invention provides a linearly polarized Micro-LED with a high extinction ratio, comprising an unetched area and a mesa, wherein a silicon dioxide passivation layer is deposited on the top of the unetched area, the outer wall of the mesa, and the top of the mesa, and a yield step is opened on the silicon dioxide passivation layer on the outer periphery of the top of the mesa.

[0007] Furthermore, the unetched area includes a Sapphire layer and an unetched N-GaN layer stacked sequentially from bottom to top;

[0008] The mesa includes an etched N-GaN layer, an MQW layer, a P-GaN layer, and an ITO layer.

[0009] Furthermore, a first contact hole is opened in the silicon dioxide passivation layer at the top of the unetched area, and the first contact hole penetrates the silicon dioxide passivation layer.

[0010] Furthermore, a positive electrode is provided in the first contact hole, the bottom of the positive electrode is inserted into the first contact hole and connected to the top of the unetched area, and the top extends out of the first contact hole;

[0011] A negative electrode corresponding to the positive electrode is arranged on the top of the unetched area away from the positive electrode.

[0012] Furthermore, a first sidewall electrode is provided on the step;

[0013] Second sidewall electrodes are provided on all outer side walls of the table, and third sidewall electrodes are connected to the bottom of the second sidewall electrodes in a circumferential direction;

[0014] The first sidewall electrode, the second sidewall electrode and the third sidewall electrode are connected to each other and formed as one piece.

[0015] Furthermore, metal leads are provided between the positive electrode and the first sidewall electrode, the second sidewall electrode and the third sidewall electrode.

[0016] Furthermore, a plurality of metal gratings are provided in the first sidewall electrode, both sides of the metal gratings in the length direction are respectively connected to the inner sidewalls of the first sidewall electrode, and the bottom of the metal gratings is connected to the ITO layer through a silicon dioxide passivation layer.

[0017] The beneficial effects of the present invention are as follows: the present invention deposits a silicon dioxide passivation layer on the top of the unetched area, the outer wall of the mesa and the top of the mesa, and then opens a step on the outer periphery of the top of the mesa after the silicon dioxide is passivated, so that the top of the ITO layer is also covered with a layer of silicon dioxide passivation layer, and the preparation of the silicon dioxide transition layer is completed without additional processes. This layer of silicon dioxide can also act as an anti-reflection film, thereby increasing the transmittance of light and increasing the light output efficiency of the linearly polarized Micro-LED. Moreover, the sidewall electrode designed by the present invention can not only conduct normally, but also effectively reduce the light output of the sidewall and sapphire of the Micro-LED. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of a specific implementation method of the utility model.

[0019] Figure 2 It is an exploded schematic diagram of each component of the utility model.

[0020] Figure 3 It is a front view of the utility model.

[0021] Figure 4 It is a left view of the present utility model.

[0022] Figure 5 yes Figure 4 Sectional view of AA in the figure.

[0023] 1. Unetched area; 2. Mesa; 91. Sapphire layer; 92. Etched N-GaN layer; 921. Unetched N-GaN layer; 93. MQW layer; 94. P-GaN layer; 95. ITO layer; 3. Silicon dioxide passivation layer; 4. First contact hole; 5. Positive electrode; 6. Negative electrode; 7. First sidewall electrode; 8. Second sidewall electrode; 9. Third sidewall electrode; 10. Metal lead; 11. Metal grating DETAILED DESCRIPTION

[0024] The present invention will be further described below with reference to the accompanying drawings and embodiments. It should be noted that, in the description of the present invention, the terms "upper," "lower," "left," "right," "inner," "outer," and the like, indicating directions or positions, are based on the directions or positions shown in the accompanying drawings and are intended solely for the purpose of facilitating and simplifying the description of the present invention. They are not intended to indicate or imply that the devices or components referred to must have a specific direction, be constructed, or operate in a specific manner. Therefore, they should not be construed as limiting the present invention. The terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0025] like Figure 1-5As shown, the present invention provides a linearly polarized Micro-LED with a high extinction ratio. In this embodiment:

[0026] A linearly polarized Micro-LED with a high extinction ratio includes an unetched area and a mesa. The invention is characterized in that a silicon dioxide passivation layer is deposited on the top of the unetched area, the outer wall of the mesa, and the top of the mesa, and a step is provided on the silicon dioxide passivation layer on the outer periphery of the top of the mesa.

[0027] During the production process of Micro-LED, an unetched area 1 and a mesa 2 are formed by etching on the epitaxial wafer. The unetched area 1 and the mesa 2 are formed as one piece. Because ICP etching of the mesa during the preparation of Micro-LED will damage its side walls, resulting in reduced efficiency, a silicon dioxide passivation layer 3 is deposited on the top of the unetched area 1, all outer walls of the mesa 2, and the top of the mesa 2 to repair the damage. A step is opened on the silicon dioxide passivation layer 3 on the outer periphery of the top of the mesa 2, and the step is a "U"-shaped structure.

[0028] In this embodiment: the unetched area includes a Sapphire layer and an unetched N-GaN layer stacked sequentially from bottom to top;

[0029] The mesa includes an etched N-GaN layer, an MQW layer, a P-GaN layer, and an ITO layer.

[0030] The unetched region 1 includes a Sapphire layer 91 and an unetched N-GaN layer 92 stacked sequentially from bottom to top;

[0031] The mesa 2 includes an etched N-GaN layer 92, an MQW layer 93, a P-GaN layer 94 and an ITO layer 95, wherein the unetched N-GaN layer 92 in the unetched area 1 and the etched N-GaN layer 921 in the mesa 2 are originally integrated and formed by etching definition. Now, for the convenience of writing this application, they are divided into two parts. The ITO layer 95 on the top of the mesa can be deposited by a dual-cavity magnetron sputtering device to serve as a current expansion layer.

[0032] In this embodiment, a first contact hole 4 is opened on the silicon dioxide passivation layer 3 at the top of the unetched area 1 , and the first contact hole 4 penetrates the silicon dioxide passivation layer 3 .

[0033] A first contact hole 4 is formed on the silicon dioxide passivation layer 3 at the top of the unetched area 1 . The first contact hole 4 extends upward and penetrates the silicon dioxide passivation layer 3 .

[0034] In this embodiment: a positive electrode 5 is provided in the first contact hole 4, the bottom of the positive electrode 5 is inserted into the first contact hole 4 and connected to the top of the unetched area 1, and the top extends out of the first contact hole 4;

[0035] A negative electrode 6 corresponding to the positive electrode 5 is provided on the top of the unetched region 1 away from the positive electrode 5 .

[0036] A positive electrode 5 is provided in the first contact hole 4. The positive electrode 5 cooperates with the first contact hole 4. The bottom of the positive electrode 5 is inserted into the first contact hole 4 and connected to the top of the unetched area 1. The top of the positive electrode 5 extends out of the first contact hole 4.

[0037] A negative electrode 6 is provided on the top of the unetched region 1 away from the positive electrode 5 .

[0038] In this embodiment: a first sidewall electrode 7 is provided on the step;

[0039] Second side wall electrodes 8 are provided on all outer side walls of the table 2, and third side wall electrodes 9 are connected to the bottom circumference of the second side wall electrodes 8;

[0040] The first side wall electrode 7 , the second side wall electrode 8 and the third side wall electrode 9 are connected to each other and formed integrally.

[0041] A first side wall electrode 7 is provided on the making way step. The first side wall electrode 7 is arranged circumferentially around the top of the table 2 in a "U"-shaped structure for filling the making way step. A second side wall electrode 8 is provided on all outer walls of the table 2. The bottom of the second side wall electrode 8 is circumferentially connected to a third side wall electrode 9. The first side wall electrode 7, the second side wall electrode 8 and the third side wall electrode 9 are connected to each other and formed as one piece.

[0042] In this embodiment, metal leads 10 are provided between the positive electrode 5 and the first side wall electrode 7 , the second side wall electrode 8 and the third side wall electrode 9 .

[0043] A metal lead 10 is provided between the positive electrode 5 and the first side wall electrode 7, the second side wall electrode 8 and the third side wall electrode 9 to connect the positive electrode 5, the first side wall electrode 7, the second side wall electrode 8 and the third side wall electrode 9. Such an electrode design can not only conduct normally, but also effectively reduce the light emission from the side wall and sapphire of the Micro-LED.

[0044] In this embodiment, a plurality of metal gratings 11 are provided in the first sidewall electrode 7 . Both sides of the metal gratings 11 in the length direction are connected to the inner sidewall of the first sidewall electrode 7 , and the bottom of the metal gratings 11 is connected to the ITO 95 layer through the silicon dioxide passivation layer 3 .

[0045] Several metal gratings 11 are arranged in the first sidewall electrode 7. The two sides of the metal gratings 11 in the length direction are respectively connected to the corresponding inner walls of the first sidewall electrode 7. The top of the metal grating 11 is flush with the first sidewall electrode 7, and the bottom is connected to the ITO95 layer through the silicon dioxide passivation layer 3. The light of the Micro-LED passing through the metal grating 11 will be polarized.

[0046] The above describes in detail the preferred embodiments of the present invention. It should be understood that those skilled in the art can make numerous modifications and variations based on the concepts of the present invention without inventive effort. Therefore, any technical solutions that can be derived by those skilled in the art based on the concepts of the present invention through logical analysis, reasoning, or limited experimentation based on the existing technology should be within the scope of protection defined by the claims.

Claims

1. A linearly polarized Micro-LED with a high extinction ratio, comprising an unetched area (1) and a mesa (2), characterized in that: A silicon dioxide passivation layer (3) is deposited on the top of the unetched area (1), the outer sidewall of the mesa (2), and the top of the mesa (2); and a clearance step is provided on the silicon dioxide passivation layer (3) at the periphery of the top of the mesa (2).

2. The linearly polarized Micro-LED with a high extinction ratio according to claim 1, wherein: The unetched region (1) comprises a Sapphire layer (91) and an unetched N-GaN layer (92) stacked sequentially from bottom to top; The mesa (2) includes an etched N-GaN layer (92), an MQW layer (93), a P-GaN layer (94) and an ITO layer (95).

3. The linearly polarized Micro-LED with a high extinction ratio according to claim 1, wherein: A first contact hole (4) is opened on the silicon dioxide passivation layer (3) at the top of the unetched area (1), and the first contact hole (4) penetrates the silicon dioxide passivation layer (3).

4. The linearly polarized Micro-LED with a high extinction ratio according to claim 3, wherein: A positive electrode (5) is provided in the first contact hole (4), the bottom of the positive electrode (5) is inserted into the first contact hole (4) and connected to the top of the unetched area (1), and the top extends out of the first contact hole (4); A negative electrode (6) corresponding to the positive electrode (5) is provided on the top of the unetched area (1) away from the positive electrode (5).

5. The linearly polarized Micro-LED with a high extinction ratio according to claim 4, wherein: A first sidewall electrode (7) is provided on the step. Second sidewall electrodes (8) are provided on all outer side walls of the table (2), and a third sidewall electrode (9) is connected to the bottom of the second sidewall electrode (8) in a circumferential direction; The first side wall electrode (7), the second side wall electrode (8) and the third side wall electrode (9) are connected to each other and formed as one piece.

6. The linearly polarized Micro-LED with a high extinction ratio according to claim 5, wherein: Metal leads (10) are provided between the positive electrode (5) and the first side wall electrode (7), the second side wall electrode (8) and the third side wall electrode (9).

7. The linearly polarized Micro-LED with a high extinction ratio according to claim 5, wherein: A plurality of metal gratings (11) are provided in the first sidewall electrode (7); both sides of the metal gratings (11) in the length direction are respectively connected to the inner sidewall of the first sidewall electrode (7); and the bottom of the metal gratings (11) is connected to the ITO layer (95) via a silicon dioxide passivation layer (3).

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