Light emitting diode structure

Abstract

The utility model belongs to the technical field of semiconductors, and particularly relates to a light-emitting diode structure. Comprising a substrate; the buffer layer is arranged on the surface of the substrate; the first semiconductor layer is arranged on the surface of the buffer layer, the first semiconductor layer is provided with a step, and a first current blocking layer is arranged on the plane of the step; the first electrode is electrically connected with the first semiconductor layer and is arranged on the surface of the first current blocking layer; the active layer is arranged on the surface of the first semiconductor layer; the second semiconductor layer is arranged on the surface of the active layer; the compact protection layer is arranged on the surface of the second semiconductor layer; the second current blocking layer is arranged on the surface of the compact protection layer; the conductive layer is arranged on the surfaces of the compact protection layer and the second current blocking layer; the second electrode is electrically connected with the second semiconductor layer. According to the utility model, the compact protection layer is used for protecting the gallium nitride surface and the side interface, and the yield is improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductors, and in particular relates to a light emitting diode structure. Background Art

[0002] Epitaxial wafers undergo inspection, packaging, and transportation, which often introduce additional contaminants that can affect the interface state. During chip fabrication, organic cleaning and acid washing are often added to the surface to remove potential contaminants and improve the interface. However, during chip processing, the GaN interface remains exposed for extended periods, inevitably contaminating the interface state and impacting product performance and yield. Summary of the Invention

[0003] To this end, the present invention provides a light-emitting diode structure to reduce the potential contamination risk caused by exposure of the GaN interface during the epitaxial transportation process and the chip processing process, thereby solving the technical problems mentioned in the background technology.

[0004] The technical solution of the utility model is as follows: a light emitting diode structure, comprising:

[0005] substrate;

[0006] a buffer layer, disposed on the surface of the substrate;

[0007] A first semiconductor layer is provided on the surface of the buffer layer, wherein the first semiconductor layer is provided with a step, and a first current blocking layer is provided on the step plane;

[0008] a first electrode electrically connected to the first semiconductor layer and disposed on a surface of the first current blocking layer;

[0009] An active layer is disposed on the surface of the first semiconductor layer;

[0010] A second semiconductor layer is provided on the surface of the active layer;

[0011] a dense protective layer, disposed on the surface of the second semiconductor layer;

[0012] a second current blocking layer, disposed on the surface of the dense protective layer;

[0013] A conductive layer is provided on the surface of the dense protective layer and the second current blocking layer;

[0014] a second electrode electrically connected to the second semiconductor layer;

[0015] an insulating layer, disposed on the surfaces of the conductive layer, the step, the first electrode, and the second electrode;

[0016] The reflector layer is arranged on a side of the substrate facing away from the buffer layer.

[0017] Furthermore, the dense protective layer is provided with openings, and the conductive layer is connected to the second semiconductor layer through the openings.

[0018] Furthermore, an arrangement density of the openings close to the second electrode is smaller than an arrangement density of the openings close to the first electrode.

[0019] Furthermore, the number of the openings is 1 to 100.

[0020] Furthermore, the dense protective layer covers the surface of the step.

[0021] Furthermore, the dense protective layer is arranged on the edge of the second semiconductor layer close to the step, the edge away from the step and below the second current blocking layer, and the surface of the conductive layer is provided with an upward protrusion corresponding to the position of the dense protective layer.

[0022] Furthermore, the thickness of the dense protective layer is 1-5 nm.

[0023] Furthermore, the radius of the opening is 5-100 μm.

[0024] Furthermore, the material of the dense protective layer is SiN x Or Al2O3, when the dense protective layer is SiN x When the dense protective layer is Al2O3, it is deposited by MOCVD or Sputter. When the dense protective layer is Al2O3, it is deposited by ALD.

[0025] The beneficial effects of this invention include: protecting the gallium nitride surface and side interfaces through a dense protective layer, improving yield. The porous structure of the light-emitting area of this invention helps prevent water vapor from accumulating at the electrodes, while moisture in the light-emitting area is relatively easy to evaporate, which can improve chip reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic cross-sectional view of Example 1 of the present invention.

[0027] Figure 2 It is a top view schematic diagram of embodiment 1 of the present utility model.

[0028] Figure 3 It is a schematic cross-sectional structure diagram of Example 2 of the present utility model.

[0029] Figure 4 It is a schematic cross-sectional view of Example 3 of the present utility model. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. The embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts should fall within the scope of protection of the present invention.

[0031] In embodiment 1 of the present invention, Figure 1 and Figure 2 This is a structural diagram provided according to an embodiment of a light emitting diode structure of the present invention, such as Figure 1 As shown, the utility model includes:

[0032] Substrate 1.

[0033] The buffer layer 2 is disposed on the surface of the substrate 1 .

[0034] The first semiconductor layer 3 is provided on the surface of the buffer layer 2 and has a step 31. The first current blocking layer 4 is provided on the plane of the step 31. Specifically, it can be an N-type semiconductor layer.

[0035] The first electrode 5 is electrically connected to the first semiconductor layer 3 and is disposed on the surface of the first current blocking layer 4. Specifically, it can be an N-type electrode.

[0036] The active layer 6 is disposed on the surface of the first semiconductor layer 3 .

[0037] The second semiconductor layer 7 is provided on the surface of the active layer 6 and can be a P-type semiconductor layer.

[0038] The dense protection layer 12 is disposed on the surface of the second semiconductor layer 7 .

[0039] The second current blocking layer 8 is provided on the surface of the dense protection layer 12. The first current blocking layer and the second current blocking layer are generally made of SiO2, SiN x 、Al2O3、SiO x N y wait.

[0040] The conductive layer 10 is disposed on the surface of the dense protection layer 12 and the second current blocking layer 8 and is generally made of ITO, ZnO, NiO, InSnZnO, etc.

[0041] The second electrode 9 is electrically connected to the second semiconductor layer 7 .

[0042] The insulating layer 13 is disposed on the surfaces of the conductive layer 10 , the step 31 , the first electrode 5 , and the second electrode 9 .

[0043] The reflector layer 11 is disposed on a side of the substrate 1 facing away from the buffer layer 2 .

[0044] Among them, Figure 2 As shown, the first electrode 5 includes a first electrode pad 51 and a first electrode extension strip 52. The first electrode pad 51 is connected to the first electrode extension strip 52. The first electrode extension strip 52 is located on the surface of the first current blocking layer 4. The second electrode 9 includes a second electrode pad 91 and a second electrode extension strip 92. The second electrode extension strip 92 is provided on the surface of the conductive layer 10 and is located above the first current blocking structure 81.

[0045] In this embodiment, the dense protective layer 12 is provided with openings 121, and the conductive layer 10 is connected to the second semiconductor layer 7 through the openings 121. The porous structure of the dense protective layer and the conductive layer helps prevent water vapor from accumulating at the electrodes, while moisture in the light-emitting area is relatively volatile, thereby improving chip reliability.

[0046] In this embodiment, the number of the openings 121 is 1-100.

[0047] In this embodiment, the radius of the opening 121 is 5 to 300 μm. It should be noted that the aperture diameter, arrangement density, and number of the openings are coordinated to ensure the contact area between the conductive layer and the second semiconductor. For example, if there is only one opening, the radius can be selected in the range of 200 to 300 μm. If the openings are densely packed and numerous, a radius of 5 μm can be selected.

[0048] In this embodiment, the arrangement density of the openings 121 close to the second electrode 9 is smaller than the arrangement density of the openings 121 close to the first electrode 5 . This arrangement is beneficial to current diffusion.

[0049] In this embodiment, the thickness of the dense protective layer 12 is 1-5 nm. If the dense protective layer is too thick, it will increase absorption and affect brightness, and if it is too thin, it will have no protective effect. Preferably, the thickness is 3 nm.

[0050] In this embodiment, the material of the dense protection layer 12 is SiN x Or Al2O3, when the dense protective layer 12 is made of SiN x When the dense protective layer 12 is made of Al2O3, it is deposited by MOCVD or Sputter. When the dense protective layer 12 is made of Al2O3, it is deposited by ALD.

[0051] In embodiment 2 of the present invention, Figure 3As shown, the difference from Example 1 is that the dense protective layer 12 is provided on the edge of the second semiconductor layer 7 close to the step 31, the edge away from the step 31, and below the second current blocking layer 8, and an upward protrusion 102 is provided on the surface of the conductive layer 10 at the position corresponding to the dense protective layer 12. In this case, the dense protective layer is only retained near the edge of the light-emitting area and below the current blocking layer.

[0052] In embodiment 3 of the present invention, Figure 4 As shown, the difference from Example 1 is that the dense protective layer 12 covers the surface of the step 31, which is equivalent to covering the exposed surface of the first semiconductor layer and the exposed side surfaces of the active layer and the second semiconductor layer.

[0053] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the utility model and are not limiting. Although the utility model is described in detail with reference to examples, ordinary technicians in this field should understand that the technical solution of the utility model can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the utility model, which should be included in the scope of the claims of the utility model.

Claims

1. A light emitting diode structure, characterized in that: include: substrate (1); A buffer layer (2) is provided on the surface of the substrate (1); A first semiconductor layer (3) is provided on the surface of the buffer layer (2), the first semiconductor layer (3) is provided with a step (31), and a first current blocking layer (4) is provided on the plane of the step (31); A first electrode (5) electrically connected to the first semiconductor layer (3) and arranged on the surface of the first current blocking layer (4); An active layer (6) is provided on the surface of the first semiconductor layer (3); A second semiconductor layer (7) is provided on the surface of the active layer (6); A dense protective layer (12) is provided on the surface of the second semiconductor layer (7); a second current blocking layer (8) disposed on the surface of the dense protective layer (12); A conductive layer (10) is provided on the surface of the dense protective layer (12) and the second current blocking layer (8); a second electrode (9) electrically connected to the second semiconductor layer (7); An insulating layer (13) is provided on the surfaces of the conductive layer (10), the step (31), the first electrode (5), and the second electrode (9); A reflector layer (11) is arranged on a side of the substrate (1) facing away from the buffer layer (2).

2. The light emitting diode structure according to claim 1, wherein: An opening (121) is provided on the dense protective layer (12), and the conductive layer (10) is connected to the second semiconductor layer (7) through the opening (121).

3. The light emitting diode structure according to claim 2, wherein: The arrangement density of the openings (121) close to the second electrode (9) is smaller than the arrangement density of the openings (121) close to the first electrode (5).

4. The light emitting diode structure according to claim 2, wherein: The number of the openings (121) is 1 to 100.

5. The light emitting diode structure according to claim 1 or 2, characterized in that: The dense protective layer (12) covers the surface of the step (31).

6. The light emitting diode structure according to claim 1, wherein: The dense protective layer (12) is arranged on the edge of the second semiconductor layer (7) close to the step (31), the edge away from the step (31), and below the second current blocking layer (8), and an upward protrusion (102) is provided on the surface of the conductive layer (10) at a position corresponding to the dense protective layer (12).

7. The light emitting diode structure according to claim 1, wherein: The thickness of the dense protective layer (12) is 1-5 nm.

8. The light emitting diode structure according to claim 2, wherein: The radius of the opening (121) is 5-100 μm.

9. The light emitting diode structure according to claim 1, wherein: The material of the dense protective layer (12) is SiN x Or Al2O3, when the dense protective layer (12) is SiN x When the dense protective layer (12) is Al2O3, it is deposited by MOCVD or Sputter. When the dense protective layer (12) is Al2O3, it is deposited by ALD.

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