MEMS chip of embedded TMV packaging structure

Abstract

The utility model relates to an MEMS chip of an embedded TMV packaging structure. According to the MEMS chip of the embedded TMV packaging structure, flip MEMS chips are stacked on the front face of an ASIC chip in the vertical direction, gaps of the chips are filled with plastic packaging materials, and the plastic packaging materials are punched and filled with copper through the TMV technology, so that a bonding pad pin structure is formed, and the MEMS chip is communicated with the outside in a bonding pad pin mode. According to the design, the molding compound is used for filling in a TMV process mode, so that the stress resistance of the chip is greatly improved, and the structure of the chip is more stable; through a bonding pad pin formed by punching and copper filling of a plastic packaging material through a TMV technology, the MEMS chip has an embedded effect similar to LGA packaging, a host can be put in and taken out at any time, and convenience is improved; the MEMS chip is inversely welded on the surface of the ASIC chip, so that the electrical transmission rate is increased, and the electrical performance of the product is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor packaging, in particular to a MEMS chip with an embedded TMV packaging structure. Background Art

[0002] TMV technology is the driving force and core of the development of 3D stacked packaging. After the plastic encapsulation process, vertical vias are created in the plastic package using laser drilling, with the bottom of the vias connected to metal. Subsequently, conductive material is filled into the vias through sputtering and electroplating, supplemented by wire bonding and reflow soldering to achieve 3D interconnection between logic and memory components.

[0003] MEMS sensors have the following key advantages: small size, light weight, low power consumption, high reliability, high sensitivity, and ease of integration. They are the main force in microsensors and are gradually replacing traditional sensors. They are being researched in nearly every field, from consumer electronics and the automotive industry to aerospace, machinery, chemicals, and medicine. Common products include pressure sensors, accelerometers, gyroscopes, electrostatic light projection displays, DNA amplification microsystems, and chemical sensors.

[0004] Combining TMV technology with MEMS sensors can not only combine the advantages of the two, but also achieve the effect of one plus one being greater than two, which is conducive to the future development of the MEMS sensor field. Summary of the Invention

[0005] The purpose of the utility model is to provide a MEMS chip with an embedded TMV packaging structure to solve the problem of unstable MEMS chip packaging structure and improve the convenience of product use.

[0006] The MEMS chip is welded on the front side of the ASIC chip in a vertical direction, and includes a MEMS chip, a MEMS functional layer, a MEMS welding copper pillar, an ASIC chip, a TMV through-hole copper pillar, adhesive, an ASIC functional layer, an ASIC passivation layer, and an ASIC pad. The MEMS functional layer is formed on the front side of the MEMS chip; the bottom end of the MEMS welding copper pillar grows on the front side of the MEMS functional layer, and the top end of the MEMS welding copper pillar is welded on the front side of the ASIC pad; the TMV through-hole copper pillar grows on the front side of the ASIC functional layer; the adhesive is adhered to the back side of the ASIC chip for heat dissipation; the ASIC functional layer is formed on the front side of the ASIC chip; the ASIC passivation layer is formed on the surface of the ASIC functional layer, and an ASIC pad is reserved for welding with the MEMS chip; the plastic encapsulation compound is filled on the front side of the ASIC passivation layer and wraps the MEMS chip, the MEMS functional layer, the MEMS welding copper pillar, and the TMV through-hole copper pillar; the pad grows at the end of the TMV through-hole copper pillar and is exposed outside the plastic encapsulation compound.

[0007] Furthermore, a MEMS soldering copper pillar is grown on the front side of the MEMS functional layer. The MEMS soldering copper pillar is electrically connected to the MEMS functional layer, and the MEMS soldering copper pillar is electrically linked to the ASIC functional layer.

[0008] Furthermore, there is a non-electrical connection between the MEMS functional layer and the MEMS chip, and there is a non-electrical connection between the ASIC functional layer and the ASIC chip.

[0009] Furthermore, the TMV copper pillar is grown on the front side of the ASIC functional layer. The TMV copper pillar is electrically connected to the ASIC functional layer, and the TMV copper pillar is electrically connected to the pad.

[0010] Furthermore, the adhesive backing is adhered to the back side of the ASIC chip, and there is a non-electrical connection between the adhesive backing and the ASIC chip.

[0011] Furthermore, there is a non-electrical covering between the ASIC passivation layer and the ASIC functional layer.

[0012] Furthermore, the plastic encapsulation material wraps the MEMS chip and the TMV through-hole copper pillars, and the plastic encapsulation material is filled on the front side of the ASIC passivation layer. The connection or contact between the plastic encapsulation material and the MEMS chip component of the embedded TMV packaging structure is non-electrical.

[0013] Furthermore, the pad is exposed outside the plastic packaging material, and the pad is non-electrically connected to the plastic packaging material. The pad is exposed outside the plastic packaging material, and the pad is non-electrically connected to the plastic packaging material.

[0014] Compared with the prior art, the present invention has the following significant advantages:

[0015] 1. By using TMV technology to fill with plastic packaging material, the chip's stress resistance is greatly improved, making the chip structure more stable.

[0016] 2. The pad pins formed by punching holes in the plastic packaging material and filling copper with the TMV process make the MEMS chip have an embedded effect similar to LGA packaging, which can be put in and out of the host at any time, improving convenience.

[0017] 3. By flip-chip welding the MEMS chip on the surface of the ASIC chip, the electrical transmission rate is increased, thereby improving the electrical performance of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic side view of a MEMS chip embodiment of an embedded TMV packaging structure of the present invention.

[0019] Figure 2This is a bottom view of a schematic diagram of a MEMS chip embodiment of an embedded TMV packaging structure of the present invention.

[0020] Figure 3 This is a schematic diagram of a MEMS chip embodiment of an embedded TMV packaging structure of the present invention, and a side view of the MEMS chip.

[0021] Figure 4 This is a schematic diagram of an embodiment of a MEMS chip with an embedded TMV packaging structure and a side view of an ASIC chip of the present invention.

[0022] In the figure: 11 is an ASIC chip, 111 is an ASIC functional layer, 112 is an ASIC passivation layer, 113 is an ASIC pad, 12 is a TMV through-hole copper pillar, 13 is a backing glue, 21 is a MEMS chip, 211 is a MEMS functional layer, 212 is a MEMS welding copper pillar, 31 is a plastic packaging material, and 32 is a pad. DETAILED DESCRIPTION

[0023] The following describes the embodiments of the present invention in detail with reference to the accompanying drawings.

[0024] The following will clearly and completely describe the technical solutions in the design examples of this specification in conjunction with the drawings in the design examples of this specification. Please note that the design example described is only one design example of this specification, and the design examples in actual situations should include multiple examples based on this design idea. Based on the design example in this specification, all other design examples obtained by ordinary technicians without creative work should fall within the scope of protection of this specification.

[0025] The utility model protects a packaging structure of a MEMS chip with an embedded TMV packaging structure.

[0026] like Figure 1 As shown, an embedded TMV packaging structure includes an ASIC chip 11 , an ASIC chip 21 , a plastic packaging material 31 , a solder pad 32 , a TMV through-hole copper column 12 , and a backing adhesive 13 .

[0027] ASIC chips in Figure 4From left to right, the following components are included: ASIC chip 11, ASIC functional layer 111, ASIC passivation layer 112, ASIC pads 113, adhesive backing 13, TMV copper pillars 12, and pads 32. ASIC functional layer 111 is formed on the front of ASIC chip 11, providing a non-electrical connection. ASIC passivation layer 112 covers ASIC functional layer 111, providing a non-electrical connection. ASIC pads 113 are formed on ASIC functional layer 111, providing an electrical connection, and are exposed by ASIC passivation layer 112. Adhesive backing 13 is bonded to the back of ASIC chip 11, providing a non-electrical connection. TMV copper pillars 12 are grown on ASIC functional layer 111, providing an electrical connection. Pads 32 are electrically connected to the ends of TMV copper pillars 12.

[0028] MEMS chips in Figure 3 The device comprises a MEMS chip 21, a MEMS functional layer 211, and a MEMS soldering copper pillar 212. The MEMS functional layer 211 is formed on the front surface of the MEMS chip 21 for non-electrical connection, and the MEMS soldering copper pillar 212 is grown on the surface of the MEMS functional layer 211 for electrical connection.

[0029] Welding of ASIC chip and MEMS chip Figure 1 The MEMS soldering copper pillar 212 should include: an ASIC soldering pad 113 and a MEMS soldering copper pillar 212. The MEMS soldering copper pillar 212 is docked in the groove of the ASIC soldering pad 113 and electrically connected in a reflow soldering manner.

[0030] like Figure 1 As shown, the molding compound 31 should surround the ASIC chip 11, the ASIC chip 21, and the TMV copper pillar 12, and should be non-electrically bonded to the aforementioned structures. Furthermore, the solder pad 32 should be exposed outside the molding compound 31 and non-electrically bonded to the plastic package. The TMV copper pillar 12 and solder pad 32 are produced through TMV through-holes and electroplating.

[0031] like Figure 2 As shown, a bottom view of a MEMS chip with an embedded TMV packaging structure includes a plastic packaging material 31 and a solder pad 32. Figure 1 , Figure 2 It can be clearly seen that the pad 32 is exposed outside the molding compound 31 and forms a non-electrical connection.

[0032] In a design example, a distance should be maintained between the TMV through-hole copper pillar 12 and the MEMS chip 21 , and the distance needs to be greater than the maximum process error of the placement machine.

[0033] In a design example, the minimum copper pillar spacing and height of the MEMS soldering copper pillars 212 need to be greater than a certain parameter range, and this range needs to be greater than the minimum particle size of the molding compound 31 .

[0034] In a design example, the bottom thickness of the molding compound 31 should be greater than the total thickness of the MEMS chip 21 , the MEMS functional layer 211 , and the MEMS soldering copper pillars 212 , and the height of the TMV through-hole copper pillars 12 .

[0035] In a design example, a distance should be maintained between the pad 32 and the edge of the molding compound 31. The distance needs to be greater than the maximum process error of the cutting machine.

Claims

1. A MEMS chip with an embedded TMV packaging structure, comprising an ASIC chip (11), a MEMS chip (21) and a plastic packaging material (31), characterized in that: The MEMS chip is welded on the front side of the ASIC chip in a vertical direction, and comprises a MEMS chip (21), a MEMS functional layer (211), a MEMS welding copper pillar (212), an ASIC chip (11), a TMV through-hole copper pillar (12), a back glue (13), an ASIC functional layer (111), an ASIC passivation layer (112), and an ASIC pad (113). The MEMS functional layer (211) is formed on the front side of the MEMS chip (21); the bottom end of the MEMS welding copper pillar (212) grows on the front side of the MEMS functional layer (211), and the top end of the MEMS welding copper pillar (212) is welded on the front side of the ASIC pad (113); the TMV through-hole copper pillar (12) grows on the ASIC The front side of the C functional layer (111); the back glue (13) is bonded to the back side of the ASIC chip (11) for heat dissipation; the ASIC functional layer (111) is formed on the front side of the ASIC chip (11); the ASIC passivation layer (112) is formed on the surface of the ASIC functional layer (111), and an ASIC soldering pad (113) is left for soldering with the MEMS chip (21); the plastic encapsulation material (31) is filled on the front side of the ASIC passivation layer (112), and wraps the MEMS chip (21), the MEMS functional layer (211), the MEMS soldering copper column (212), and the TMV through-hole copper column (12); the soldering pad (32) is grown at the end of the TMV through-hole copper column (12) and is exposed outside the plastic encapsulation material (31).

2. A MEMS chip with an embedded TMV package structure according to claim 1, characterized in that: A MEMS soldering copper column (212) is formed on the front of the MEMS functional layer (211). The MEMS soldering copper column (212) and the MEMS functional layer (211) are electrically connected, and the MEMS soldering copper column (212) and the ASIC functional layer (111) are electrically linked.

3. A MEMS chip with an embedded TMV package structure according to claim 2, characterized in that: There is a non-electrical connection between the MEMS functional layer (211) and the MEMS chip (21), and there is a non-electrical connection between the ASIC functional layer (111) and the ASIC chip (11).

4. A MEMS chip with an embedded TMV package structure according to claim 1, characterized in that: The TMV through-hole copper pillar (12) is grown on the front side of the ASIC functional layer (111); the TMV through-hole copper pillar (12) and the ASIC functional layer (111) are electrically connected; and the TMV through-hole copper pillar (12) and the pad (32) are electrically connected.

5. The MEMS chip with embedded TMV packaging structure according to claim 1, characterized in that: The back glue (13) is adhered to the back of the ASIC chip (11), and there is a non-electrical connection between the back glue (13) and the ASIC chip (11).

6. A MEMS chip with an embedded TMV package structure according to claim 1, characterized in that: There is a non-electrical covering between the ASIC passivation layer (112) and the ASIC functional layer (111).

7. A MEMS chip with an embedded TMV package structure according to claim 1, characterized in that: The plastic encapsulation material (31) wraps the MEMS chip (21) and the TMV through-hole copper column (12), and the plastic encapsulation material (31) is filled on the front side of the ASIC passivation layer (112). The connection or contact between the plastic encapsulation material (31) and the MEMS chip component of the embedded TMV packaging structure is a non-electrical connection.

8. The MEMS chip with embedded TMV package structure according to claim 1, characterized in that: The soldering pad (32) is exposed outside the plastic packaging material (31), and the soldering pad (32) and the plastic packaging material (31) are non-electrically connected.

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