Atomizing core, atomizer and electronic atomizing device

Abstract

The utility model provides an atomizing core, an atomizer and an electronic atomizing device. The semiconductor substrate plays a role in guiding liquid in the atomizing core, compared with a traditional ceramic liquid guiding piece, the first liquid guiding through holes are ordered, pores are fixed and straight through, transmission of the atomizing matrix is facilitated, and it is ensured that the transmission efficiency is high, and the taste reducibility is good; secondly, a traditional metal heating piece is replaced by the semiconductor heating layer, the problems of metal corrosion and the like can be avoided in the atomization process, heavy metal can be greatly reduced or even eliminated, and then safety is improved; in addition, the arrangement of the second liquid guide through holes facilitates the uniform distribution of the atomization substrate in the semiconductor heating layer, and is beneficial to improving the heating consistency.

Description

Technical Field

[0001] The present application relates to the field of electronic atomization, and in particular to an atomization core, an atomizer and an electronic atomization device. Background Art

[0002] Currently, most atomizer cores are made of cotton or ceramic. They include a liquid-carrying element and a heating element. The liquid-carrying element is made of ceramic or cotton, including but not limited to pure cotton fiber and linen. The heating element is made of printed thick film, thin film, or metal materials such as metal mesh and spring wire.

[0003] However, cotton wicks and ceramics are porous media structures with disordered internal pores. Cotton wicks are soft and easily deformed during assembly. Different materials and different compression levels can result in different pore sizes, affecting safety, taste, atomization, and other aspects. While porous ceramics have relatively fixed pore sizes, they can still contain oversized or undersized pores, as well as numerous blind holes. These abnormal pores can cause problems such as carbon deposits and wick sticking, impacting safety and user experience. Utility Model Content

[0004] The present application provides an atomizer core, an atomizer, and an electronic atomization device to solve the problem of how to improve the atomization performance of the atomizer core.

[0005] In order to solve the above technical problems, the first technical solution provided in this application is: providing an atomization core, which includes a semiconductor substrate, a semiconductor heating layer and an electrode; the semiconductor substrate has a relative liquid absorption surface and an atomization surface; the semiconductor substrate has a plurality of first liquid conduction holes extending from the liquid absorption surface to the atomization surface, and the first liquid conduction holes are used to conduct the atomization matrix; the semiconductor heating layer is arranged on the atomization surface, and has a plurality of second liquid conduction holes; the second liquid conduction holes are arranged one by one in alignment with and connected to the first liquid conduction holes; the electrode is at least partially arranged on the atomization surface, and is electrically connected to the semiconductor heating layer.

[0006] Among them, a sink groove is opened on the atomized surface of the semiconductor substrate; the semiconductor heating layer is a doped semiconductor substrate, the doped semiconductor substrate is embedded in the sink groove and is in contact with the bottom wall of the sink groove; the second liquid guide hole penetrates the doped semiconductor substrate.

[0007] The two ends of the sink are open along the first direction; the two side walls of the sink along the second direction are respectively enclosed to form a limiting area; the first direction and the second direction are arranged to intersect; the shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink.

[0008] Among them, the limiting area of ​​the semiconductor substrate and the part of the doped semiconductor substrate located in the limiting area are non-opening areas; the first liquid guide hole is only opened in the sink area; the number of electrodes is two, and they are arranged on opposite sides of the atomizing surface along the second direction; part of each electrode is arranged on the surface of the semiconductor substrate, and part is arranged on the surface of the non-opening area of ​​the doped semiconductor substrate.

[0009] Among them, the semiconductor substrate is an intrinsic semiconductor substrate; local doping is performed on the atomized surface of the intrinsic semiconductor substrate to form a semiconductor heating layer; the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor substrate; the first liquid conducting hole and the corresponding second liquid conducting hole are different hole sections of the same hole of the intrinsic semiconductor substrate.

[0010] Among them, the semiconductor substrate is an intrinsic silicon substrate, and the semiconductor heating layer is a doped conductive silicon layer or a doped non-silicon semiconductor layer; the thickness of the semiconductor heating layer is less than the thickness of the semiconductor substrate and is less than or equal to 10 microns; the resistivity of the semiconductor heating layer is less than the resistivity of the semiconductor substrate.

[0011] Wherein, the first liquid-conducting through hole and the second liquid-conducting through hole are both straight through holes; the aperture of the straight through hole is 5 microns to 100 microns.

[0012] Among them, the atomizer core also includes a substrate, which is arranged on the liquid absorption surface; the substrate includes a glass substrate, a quartz substrate or a dense ceramic substrate; the substrate has a plurality of third liquid conducting holes, and the third liquid conducting holes are arranged one by one in alignment with and connected to the second liquid conducting holes; the aperture of the third liquid conducting holes is greater than or equal to the aperture of the second liquid conducting holes, and greater than or equal to the aperture of the first liquid conducting holes; the aperture of the third liquid conducting holes is less than or equal to 100 microns.

[0013] In order to solve the above technical problems, the second technical solution provided in this application is: to provide an atomizer, which includes a liquid storage chamber and the atomizing core as described above; the liquid storage chamber is used to store the atomizing matrix and is connected to the atomizing core.

[0014] In order to solve the above technical problems, the third technical solution provided in this application is: to provide an electronic atomization device, which includes a battery assembly and the atomizer as described above.

[0015] Beneficial effects of the present application: Different from the prior art, the present application provides an atomization core, an atomizer and an electronic atomization device, wherein the atomization core includes a semiconductor substrate, a semiconductor heating layer and an electrode. The semiconductor substrate has a relative liquid absorption surface and an atomization surface. The semiconductor substrate has a plurality of first liquid conduction holes extending from the liquid absorption surface to the atomization surface, and the first liquid conduction holes are used to conduct the atomization matrix. The semiconductor heating layer is arranged on the atomization surface and has a plurality of second liquid conduction holes. The second liquid conduction holes are aligned and connected to the first liquid conduction holes. The electrode is at least partially arranged on the atomization surface and is electrically connected to the semiconductor heating layer. The semiconductor substrate in this application plays a role of guiding liquid in the atomizer core. Compared with traditional ceramic liquid-guiding parts, the semiconductor substrate uses MEMS processing technology to obtain a first liquid-guiding through-hole. The first liquid-guiding through-hole is orderly, and the pores are relatively fixed and straight, which is conducive to the transmission of the atomization matrix, ensuring high transmission efficiency and good taste restoration; secondly, the semiconductor heating layer replaces the traditional metal heating element, and uses semiconductor technology to dope the semiconductor material to make it conductive, which can avoid problems such as metal corrosion during atomization, thereby greatly reducing or even eliminating heavy metals, thereby improving safety; in addition, the setting of the second liquid-guiding through-hole facilitates the uniform distribution of the atomization matrix in the semiconductor heating layer, which is conducive to improving the consistency of heating. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technical workers in this field, other drawings can be obtained based on these drawings without any creative work.

[0017] Figure 1 This is a structural diagram of an embodiment of the atomizer core provided by the present application;

[0018] Figure 2 This is an exploded view of the first embodiment of the atomizer core provided by this application;

[0019] Figure 3 This is a schematic top view of the structure of an embodiment of the atomizer core provided by the present application;

[0020] Figure 4 yes Figure 3 Schematic diagram of the cross-sectional structure at EE;

[0021] Figure 5 This is an exploded view of the second embodiment of the atomizer core provided by this application;

[0022] Figure 6 This is a structural diagram of an embodiment of an atomizer provided by the present application;

[0023] Figure 7It is a structural schematic diagram of an embodiment of the electronic atomization device provided in this application.

[0024] Description of Figure Numbers:

[0025] 1. Atomizer core; 10. Semiconductor substrate; 10A. Liquid absorption surface; 10B. Atomization surface; 11. First liquid guide hole; 12. Sink; 121. Limiting area; 122. Opening; 13. Non-opening area; 20. Semiconductor heating layer; 21. Second liquid guide hole; 30. Electrode; 40. Substrate; 41. Third liquid guide hole; D1, first direction; D2, second direction; L1 / L2 / L3 / L4, length; W, width; 100, atomizer; 2. Liquid storage chamber; 300, electronic atomization device; 200, battery assembly. DETAILED DESCRIPTION

[0026] The following describes the embodiments of the present application in detail with reference to the accompanying drawings.

[0027] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0028] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0029] The terms "first," "second," and "third" in this application are used only for descriptive purposes and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of such features. In the description of this application, "multiple" means at least two, for example, two, three, etc., unless otherwise specifically defined. All directional indications in the embodiments of this application (such as up, down, left, right, front, back...) are only used to explain the relative positional relationship, movement, etc. between the components under a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indications also change accordingly. In addition, the terms "including" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units that are not listed, or may optionally include other steps or units that are inherent to these processes, methods, products, or devices.

[0030] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, that the embodiments described herein may be combined with other embodiments.

[0031] In the prior art, the atomizer core includes a heating element and a liquid-conducting element. The atomizer core is generally a cotton core or a ceramic core. The liquid-conducting element is made of ceramic or cotton material, including but not limited to pure cotton fiber, linen, and the like. The heating element is made of printed thick film, thin film, or metal materials such as metal mesh and spring wire. These atomizer cores have the following pain points:

[0032] 1. There's a risk of loose fit between the heating element and the liquid guide element. Thick-film printing on ceramics can cause peeling due to poor adhesion. The heating element may also not fit tightly against the cotton wick during assembly. A loose fit between the liquid guide element and the heating element can lead to dry heating, affecting the user experience and compromising safety.

[0033] 2. Cotton wicks and ceramics are porous media structures with disordered internal pores. Cotton wicks are soft and easily deformed during assembly. Different materials and different compression levels will result in different pore sizes, which will affect safety, taste, atomization state, consistency, etc. While porous ceramics have relatively fixed pore sizes, they can still contain oversized or undersized pores, as well as numerous blind holes. These abnormal pores can cause problems such as carbon deposits and wick sticking, affecting safety and user experience.

[0034] 3. Current heating elements are all made of metal or materials with metal as the main component. During the process of e-liquid immersion or atomization, chemical corrosion or electrochemical corrosion is prone to occur, leading to the precipitation of heavy metals, which in turn affects safety.

[0035] 4. At present, porous media atomizer cores may have problems such as the adsorption of flavors and spices, resulting in poor taste restoration. In addition, long-term accumulation of flavors and spices or large-molecule sweeteners will also reduce the service life of the atomizer core, causing carbon deposition or excessive aldehydes and ketones.

[0036] See also Figures 1 to 4 , Figure 1 This is a structural diagram of an embodiment of the atomizer core provided by this application. Figure 2 This is an exploded view of the first embodiment of the atomizer core provided by this application. Figure 3 This is a schematic diagram of the top view of an embodiment of the atomizer core provided by this application. Figure 4 yes Figure 3 Schematic diagram of the cross-sectional structure at EE in the middle.

[0037] Therefore, in order to solve the problems of the prior art, the embodiment of the present application provides an atomizer core 1, an atomizer 100 and an electronic atomization device 300. The atomizer core 1 provided by the present application is first described in detail below.

[0038] The present application provides an atomizing core 1. The atomizing core 1 includes a semiconductor substrate 10, a semiconductor heating layer 20 and an electrode 30. The semiconductor substrate 10 has a relative liquid absorption surface 10A and an atomizing surface 10B. The semiconductor substrate 10 has a plurality of first liquid conduction holes 11 extending from the liquid absorption surface 10A to the atomizing surface 10B, and the first liquid conduction holes 11 are used to conduct the atomizing matrix. The semiconductor heating layer 20 is arranged on the atomizing surface 10B and has a plurality of second liquid conduction holes 21. The second liquid conduction holes 21 are aligned and connected to the first liquid conduction holes 11. The electrode 30 is at least partially arranged on the atomizing surface 10B and is electrically connected to the semiconductor heating layer 20.

[0039] The semiconductor substrate 10 in the present application plays a role of conducting liquid in the atomizer core 1. Compared with traditional ceramic liquid-conducting parts, the semiconductor substrate 10 uses MEMS (Micro-Electro-Mechanical Systems) processing technology to obtain a first liquid-conducting through-hole 11. The first liquid-conducting through-hole 11 is orderly, and the pores are relatively fixed and straight, which is conducive to the transmission of the atomized matrix, ensuring high transmission efficiency and good taste restoration; secondly, the semiconductor heating layer 20 replaces the traditional metal heating element, and uses semiconductor technology to dope the semiconductor material to make it conductive, which can avoid problems such as metal corrosion during atomization, thereby greatly reducing or even eliminating heavy metals, thereby improving safety; in addition, the provision of the second liquid-conducting through-hole 21 facilitates the uniform distribution of the atomized matrix in the semiconductor heating layer 20, which is conducive to improving the consistency of heating.

[0040] The semiconductor substrate 10 can serve as a guide structure and a storage structure for conducting the atomized substrate to the semiconductor heating layer 20. The semiconductor heating layer 20 is used to heat the atomized substrate to generate aerosol.

[0041] In some embodiments, the semiconductor substrate 10 is an intrinsic silicon substrate, and the semiconductor heating layer 20 is a doped conductive silicon layer or a doped non-silicon semiconductor layer. The thickness of the semiconductor heating layer 20 is less than the thickness of the semiconductor substrate 10 and is less than or equal to 10 microns. The semiconductor heating layer 20 is thin, so that the second liquid guide hole 21 is short, and there is almost no space for storing the atomized matrix. Therefore, each time the atomized matrix is ​​heated, it can be directly heated and atomized by the semiconductor substrate 10 and will not be circulated and heated, thereby ensuring the consistency and freshness of the aerosol taste.

[0042] In some embodiments, semiconductor substrate 10 can be made of germanium, gallium arsenide, gallium nitride, silicon carbide, or the like. Semiconductor heating layer 20 is an electrothermal material made by doping a semiconductor substrate. Furthermore, semiconductor substrate 10 can also be replaced with conductive ceramic or conductive glass.

[0043] In some embodiments, the semiconductor heating layer 20 may be an electrothermal material made of a monocrystalline silicon or polycrystalline silicon substrate doped with metal atoms, wherein the doped metal atoms include one or more of copper atoms, zinc atoms, manganese atoms, aluminum atoms, gallium atoms, and antimony atoms, including but not limited to these.

[0044] In other embodiments, the semiconductor heating layer 20 may be an electrothermal material made by doping a monocrystalline silicon or polycrystalline silicon substrate with non-metallic atoms, wherein the doped non-metallic atoms include one or more of phosphorus, arsenic, and boron, including but not limited to these.

[0045] The resistivity of the semiconductor heating layer 20 is lower than that of the semiconductor substrate 10, so that the semiconductor heating layer 20 has better heating efficiency. The resistivity of the semiconductor heating layer 20 and the semiconductor substrate 10 is not limited here and can be selected according to actual needs.

[0046] The two opposite surfaces of the semiconductor substrate 10 in the thickness direction are the atomizing surface 10B and the liquid absorption surface 10A. The liquid absorption surface 10A serves as the input surface of the atomized matrix. Since the semiconductor heating layer 20 is relatively thin, the atomizing surface 10B can also be regarded as the output surface of the aerosol.

[0047] The cross section of the semiconductor substrate 10 may be in a rectangular, circular, parallelogram, irregular polygon, or other shapes.

[0048] In this embodiment, the semiconductor substrate 10 is described as a rectangular parallelepiped, that is, the cross section of the semiconductor substrate 10 is a rectangle.

[0049] The shape of the semiconductor substrate 10 is not limited to a rectangular parallelepiped, and its external structure can be designed into other shapes according to structural assembly requirements, such as a cube, a cylinder, a prism with rounded corners, etc.

[0050] The first liquid guiding hole 11 can serve as a guiding structure and a storage structure for the atomized matrix, and is used to guide the atomized matrix on the liquid absorption surface 10A into the atomization surface 10B.

[0051] The cross section of the first liquid-conducting through hole 11 can be designed to be circular, square, triangular or irregular polygonal.

[0052] In this embodiment, the cross-section of the first liquid-conducting through holes 11 is circular, and the first liquid-conducting through holes 11 are arranged in an array.

[0053] The plurality of first liquid-conducting through holes 11 may be arranged in other arrangements such as a radial arrangement, and is not limited to the above embodiment.

[0054] The first liquid conducting through hole 11 and the second liquid conducting through hole 21 are both prepared using MEMS processing technology. The use of MEMS processing technology can ensure that the uniformity of the multiple first liquid conducting through holes 11 in the semiconductor substrate 10 is good, and the appearance of abnormal holes can be effectively avoided. Secondly, the first liquid conducting through hole 11 and the second liquid conducting through hole are both ordered holes with a fixed aperture to avoid problems such as carbon deposits and core sticking. In addition, the semiconductor substrate 10 has a better hardness than the cotton core, and it is not easy to cause the aperture deformation of the first liquid conducting through hole 11 during the assembly process, so that the consistency of the first liquid conducting through hole 11 is better, which is beneficial to improving the safety, taste and atomization state of the atomizer core 1.

[0055] In some embodiments, the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21 are both straight through holes, and the pore size of the straight through hole is 5 microns to 100 microns. For example, the pore size of the straight through hole can be 5 microns, 10 microns, 15 microns, 20 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, etc. The manufacturing process of the straight through hole is relatively simple and easy to achieve mass production; secondly, the flow path of the atomized matrix in the straight through hole is simple and direct, which reduces its flow resistance and residence time, and helps to improve the liquid conduction efficiency.

[0056] The apertures of the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21 may be the same or different.

[0057] In a preferred embodiment, the aperture of the second liquid guiding hole 21 is smaller than that of the first liquid guiding hole 11, so that the atomized matrix in the first liquid guiding hole 11 can flow smoothly into the second liquid guiding hole 21, ensuring the smooth supply of the atomized matrix and ensuring the liquid guiding efficiency of the first liquid guiding hole 11 to prevent hole blockage; at the same time, it can also avoid the storage of the atomized matrix in the second liquid guiding hole 21 and affecting the taste of the aerosol, and make the aerosol atomized from the second liquid guiding hole 21 more delicate.

[0058] In other embodiments, the aperture of the second liquid-conducting through hole 21 may be larger than the aperture of the first liquid-conducting through hole 11 .

[0059] In a preferred embodiment, the diameter of the through hole is 10 microns to 50 microns.

[0060] The semiconductor heating layer 20 is arranged in close contact with the atomizing surface 10B to prevent the semiconductor heating layer 20 from burning dry, thereby affecting the user experience and safety.

[0061] In some embodiments, a trough 12 is formed on the atomized surface 10B of the semiconductor substrate 10. The semiconductor heating layer 20 is a doped semiconductor substrate, which is embedded in the trough 12 and contacts the bottom wall of the trough 12. The second liquid-conducting hole 21 penetrates the doped semiconductor substrate.

[0062] The semiconductor substrate 10 and the semiconductor heating layer 20 can be connected by bonding, adhering, laminating or the like.

[0063] In some embodiments, since both the semiconductor substrate 10 and the semiconductor heating layer 20 use semiconductor base materials, there is better interface compatibility between the two and better bonding consistency, which can further reduce the dry burning phenomenon, thereby improving the user experience and safety.

[0064] In some embodiments, there is a gap between the side of the groove 12 and the side of the doped semiconductor substrate, and the gap is filled with bonding material, so that the semiconductor heating layer 20 can be bonded not only to the bottom wall of the groove 12, but also to the side wall of the groove 12, so as to better fix the semiconductor heating layer 20 to the atomized surface 10B of the semiconductor substrate 10, avoid dry burning, and facilitate the installation of the semiconductor heating layer 20 in the groove 12.

[0065] In some embodiments, the depth of the sink 12 is equal to the thickness of the doped semiconductor substrate to ensure that the semiconductor substrate is flush with the surface of the semiconductor base plate 10 and has better flatness, which facilitates the subsequent installation of the electrode 30 on the surface of the semiconductor heating layer 20 and the atomized surface 10B.

[0066] In other embodiments, the depth of the sinking groove 12 may be less than or greater than the thickness of the doped semiconductor substrate, depending on actual needs. There may also be no gap between the side surfaces of the sinking groove 12 and the side surfaces of the doped semiconductor substrate.

[0067] In one embodiment, the sink 12 has openings 122 at both ends along the first direction D1. The two side walls of the sink 12 along the second direction D2 are each enclosed to form a limiting region 121. The first direction D1 and the second direction D2 intersect. The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12.

[0068] The two ends of the sink 12 in the first direction D1 are open 122, which can reduce the alignment requirements and facilitate the installation of the semiconductor heating layer 20 in the sink 12. The limiting area 121 can limit the semiconductor heating layer 20 in the first direction D1, making it easier to fix the semiconductor heating layer 20 in the sink 12.

[0069] The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink 12 , that is, the semiconductor heating layer 20 and the space enclosed by the sink 12 have the same shape and the same size.

[0070] It should be understood that, in order to facilitate assembly, the size of the semiconductor heating layer 20 may be slightly smaller than the size of the space enclosed by the sink 12 .

[0071] In some embodiments, the confining region 121 of the semiconductor substrate 10 and the portion of the doped semiconductor substrate located in the confining region 121 constitute the non-perforated region 13. The first liquid-conducting through-hole 11 is provided only in the sink 12 region. Two electrodes 30 are provided, disposed on opposite sides of the atomizing surface 10B along the second direction D2. Each electrode 30 is partially disposed on the surface of the semiconductor substrate 10 and partially disposed on the surface of the non-perforated region 13 of the doped semiconductor substrate.

[0072] It should be noted that the non-perforated area 13 of the present application does not have the first liquid-conducting through-hole 11 and the second liquid-conducting through-hole 21. The first liquid-conducting through-hole 11 is provided in the area of ​​the sink 12, excluding the limiting area 121. In other words, the semiconductor substrate 10 is not fully perforated. Furthermore, the semiconductor heating layer 20 is not fully perforated, and the portion located in the non-perforated area 13 is not provided with the second liquid-conducting through-hole 21.

[0073] The electrode 30 is partially disposed on the surface of the non-perforated area 13 to prevent the electrode 30 from covering the second liquid-conducting through hole 21 and blocking aerosol.

[0074] In some embodiments, the first direction D1 is perpendicular to the second direction D2. The size of the semiconductor substrate 10 along the second direction D2 is greater than the size along the first direction D1. The width of the sink 12 along the second direction D2 is greater than the width along the first direction D1.

[0075] In some embodiments, the semiconductor substrate 10 is a cuboid with a rectangular cross section. The length L1 of the semiconductor substrate 10 is 2 mm to 9 mm, the width W of the semiconductor substrate 10 is 1 mm to 6 mm, and the thickness of the semiconductor substrate 10 is no greater than 0.8 mm.

[0076] In one specific embodiment, the semiconductor substrate 10 is a cuboid with a rectangular cross-section. The long side of the rectangle is oriented in the second direction D2, and the short side of the rectangle is oriented in the first direction D1. The length L1 of the semiconductor substrate 10 is 4.7 mm, and the width W1 of the semiconductor substrate 10 is 3 mm. The semiconductor heating layer 20 has a symmetrical octagonal cross-section with two parallel sides along the first direction D1, each with a length L2 of 3.3 mm. The two electrodes 30 have rectangular cross-sections of equal size. The long side L3 of the rectangle along the first direction D1 is 2 mm, and the short side L4 along the second direction D2 is 0.7 mm. The spacing between the two electrodes 30 is 3.3 mm. In the thickness direction, one side of the electrode 30 is aligned with a side of the semiconductor substrate 10, and the side of the semiconductor heating layer 20 along the first direction D1 is aligned with the side of the semiconductor substrate 10 along the first direction D1.

[0077] In other embodiments, the semiconductor substrate 10 , the semiconductor heating layer 20 , and the electrode 30 may all be of other sizes, which can be selected based on actual needs.

[0078] Part of each electrode 30 is disposed on the surface of the semiconductor substrate 10, thereby reserving a contact area on the electrode 30. This contact area is projected onto the surface of the semiconductor substrate 10, rather than the surface of the semiconductor heating layer 20. Connection to an external power source via the contact area reduces the effects of thermal stress and extends the service life of the electrode 30.

[0079] The electrode 30 is made of a metal material, including but not limited to high conductivity materials such as silver, gold, nickel, and aluminum. The electrode 30 can be made separately or plated on the semiconductor substrate 10 as a whole.

[0080] The semiconductor substrate 10, the semiconductor heating layer 20 and the electrode 30 are a stacked structure, which can be processed and packaged using semiconductor technology to achieve modular production.

[0081] In some embodiments, the atomizer core 1 further includes a substrate 40 disposed on the liquid absorption surface 10A. The substrate 40 comprises a glass substrate, a quartz substrate, or a dense ceramic substrate. The substrate 40 has a plurality of third liquid-conducting through-holes 41 , which are aligned with and connected to the second liquid-conducting through-holes 21 . The aperture of the third liquid-conducting through-holes 41 is greater than or equal to the aperture of the second liquid-conducting through-holes 21 and greater than or equal to the aperture of the first liquid-conducting through-holes 11 , so that the third liquid-conducting through-holes 41 can transfer the atomized substrate to the second liquid-conducting through-holes 21 .

[0082] The substrate 40 serves as a guide structure and a storage structure for transferring the atomized matrix to the semiconductor substrate 10. The substrate 40 can also support the semiconductor substrate 10.

[0083] In some embodiments, the diameter of the third liquid-conducting through hole 41 is less than or equal to 100 micrometers.

[0084] See also Figure 1 、 Figure 3 and Figure 5 , Figure 5 This is an exploded view of the second embodiment of the atomizer core provided in this application.

[0085] Compared with the first embodiment of the atomizer core 1 provided in the present application, the second embodiment of the atomizer core 1 provided in the present application has a similar structural substrate, but the difference is that the semiconductor substrate 10 and the semiconductor heating layer 20 are an integrated structure.

[0086] In some embodiments, the semiconductor substrate 10 is an intrinsic semiconductor substrate 10. A semiconductor heating layer 20 is formed by localized doping on the atomized surface 10B of the intrinsic semiconductor substrate 10. The thickness of the semiconductor heating layer 20 is less than that of the intrinsic semiconductor substrate 10. The semiconductor substrate 10 and the semiconductor heating layer 20 are integrally formed, which reduces assembly requirements and eliminates the need to pattern metal conductive elements on the substrate surface as heating elements, preventing the heating elements from falling off due to poor adhesion.

[0087] The first liquid-conducting through hole 11 and the aligned second liquid-conducting through hole 21 are different sections of the same through hole in the intrinsic semiconductor substrate 10, which can simplify the preparation process of the liquid-conducting through hole and reduce the need for alignment of the first liquid-conducting through hole 11 and the second liquid-conducting through hole 21. The first liquid-conducting through hole 11 and the second liquid-conducting through hole 21 have the same aperture.

[0088] The thickness of the semiconductor heating layer 20 is less than that of the intrinsic semiconductor substrate 10, so as to retain the liquid conducting and liquid storing functions of the intrinsic semiconductor substrate 10 and prevent the entire semiconductor substrate 10 from being doped into the semiconductor heating layer 20. It should be understood that the entire semiconductor substrate 10 forms the semiconductor heating layer 20, and the semiconductor substrate 10 has a certain thickness, so that the semiconductor heating layer 20 has a liquid storing function, resulting in the atomized matrix in the semiconductor heating layer 20 being repeatedly heated, affecting the taste of the aerosol. If the semiconductor heating layer 20 is directly connected to the liquid storage chamber 2 (see Figure 5 ) are directly connected, the cavity explosion phenomenon will occur.

[0089] The semiconductor heating layer 20 is directly formed by doping on the intrinsic semiconductor substrate 10 , and there is no dry-burning phenomenon of the semiconductor heating layer 20 .

[0090] See also Figure 6 , Figure 6 It is a structural schematic diagram of an embodiment of the atomizer provided by this application.

[0091] The present application provides an atomizer 100. The atomizer 100 includes a liquid storage chamber 2 and the atomizing core 1 described above.

[0092] The liquid storage chamber 2 is used to store the atomized matrix and is in communication with the atomizing core 1. The liquid storage chamber 2 is in communication with the second liquid conducting through hole of the semiconductor substrate.

[0093] In this embodiment, the atomizer core 1 is disposed below the liquid storage chamber 2 and is horizontally placed.

[0094] The atomizer core 1 can also be placed vertically or tilted. For example, the atomizer core 1 can be placed at a certain angle to the horizontal plane, or at a certain angle to the circumference of the atomizer 100. That is, this application does not limit the placement angle of the atomizer core 1.

[0095] In other embodiments, the atomizer core 1 can also be arranged on the side of the liquid storage chamber 2, or can also be partially embedded in the liquid storage chamber 2. That is, the atomizer core 1 and the liquid storage chamber 2 can also be arranged in other ways, which are not limited here and can be selected according to actual assembly requirements.

[0096] See also Figure 7 , Figure 7 It is a structural schematic diagram of an embodiment of the electronic atomization device provided in this application.

[0097] The present application provides an electronic atomization device 300. The electronic atomization device 300 includes a battery assembly 200 and the aforementioned atomizer 100. The battery assembly 200 is used to power the atomizer 100 to enable the atomizer 100 to operate. The battery assembly 200 is electrically connected to an electrode, such that a path is formed between the electrode and the semiconductor heating layer, allowing the semiconductor heating layer to act as a resistor to generate Joule heat.

[0098] The electronic atomization device 300 may also include a housing, a nozzle, a microphone and other structures, which will not be described in detail here. The detailed structural features of the electronic atomization device 300 are within the scope of understanding of those skilled in the art and will not be repeated here. The structure of the electronic atomization device 300 can be a variety of structures and forms. As long as it uses the atomization core structure in the embodiment of the present application, it should be included in the scope of protection of this application.

[0099] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0100] The above is only an implementation method of the present application and does not limit the scope of patent protection of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the scope of patent protection of the present application.

Claims

1. An atomizer core, characterized in that: include: A semiconductor substrate having a liquid absorption surface and an atomization surface opposite to each other; the semiconductor substrate having a plurality of first liquid conducting through holes extending from the liquid absorption surface to the atomization surface, wherein the first liquid conducting through holes are used to conduct the atomized matrix; The semiconductor heating layer is provided on the atomizing surface and has a plurality of second liquid conducting through holes; the second liquid conducting through holes are aligned and connected to the first liquid conducting through holes; The electrode is at least partially disposed on the atomizing surface and is electrically connected to the semiconductor heating layer.

2. The atomizer core according to claim 1, characterized in that A sinking groove is provided on the atomized surface of the semiconductor substrate; the semiconductor heating layer is a doped semiconductor substrate, which is embedded in the sinking groove and is in contact with the bottom wall of the sinking groove; the second liquid guide hole passes through the doped semiconductor substrate.

3. The atomizer core according to claim 2, characterized in that The two ends of the sink along the first direction are open; the two side walls of the sink along the second direction are respectively enclosed to form a limiting area; the first direction and the second direction are intersected; The shape and size of the doped semiconductor substrate are adapted to the shape and size of the sink.

4. The atomizer core according to claim 3, characterized in that The limiting area of ​​the semiconductor substrate and the part of the doped semiconductor substrate located in the limiting area are non-opening areas; the first liquid guide hole is only opened in the sink area; the number of the electrodes is two, and they are arranged on opposite sides of the atomizing surface along the second direction; each of the electrodes is partially arranged on the surface of the semiconductor substrate and partially arranged on the surface of the non-opening area of ​​the doped semiconductor substrate.

5. The atomizer core according to claim 1, characterized in that The semiconductor substrate is an intrinsic semiconductor substrate; the semiconductor heating layer is formed by local doping on the atomized surface of the intrinsic semiconductor substrate; the thickness of the semiconductor heating layer is less than the thickness of the intrinsic semiconductor substrate; The first liquid-conducting through hole and the corresponding second liquid-conducting through hole are different hole sections of the same through hole of the intrinsic semiconductor substrate.

6. The atomizer core according to any one of claims 1 to 4, characterized in that: The semiconductor substrate is an intrinsic silicon substrate, and the semiconductor heating layer is a doped conductive silicon layer or a doped non-silicon semiconductor layer; the thickness of the semiconductor heating layer is less than the thickness of the semiconductor substrate and is less than or equal to 10 microns; the resistivity of the semiconductor heating layer is less than the resistivity of the semiconductor substrate.

7. The atomizer core according to any one of claims 1 to 4, characterized in that: The first liquid-conducting through hole and the second liquid-conducting through hole are both straight through holes; the aperture of the straight through hole is 5 microns to 100 microns.

8. The atomizer core according to any one of claims 1 to 4, characterized in that: The atomizer core also includes a substrate, which is arranged on the liquid absorption surface; the substrate includes a glass substrate, a quartz substrate or a dense ceramic substrate; the substrate has a plurality of third liquid conducting holes, and the third liquid conducting holes are arranged in a one-to-one alignment with and connected to the second liquid conducting holes; the aperture of the third liquid conducting holes is greater than or equal to the aperture of the second liquid conducting holes, and greater than or equal to the aperture of the first liquid conducting holes; the aperture of the third liquid conducting holes is less than or equal to 100 microns.

9. An atomizer, characterized in that: comprising a liquid storage chamber and an atomizing core according to any one of claims 1 to 8; The liquid storage chamber is used to store the atomization matrix and is communicated with the atomization core.

10. An electronic atomization device, characterized in that: The invention comprises a battery assembly and the atomizer as claimed in claim 9.

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