Single crystal furnace doping device and single crystal furnace
By designing a single crystal furnace doping device, the doping material slowly vaporizes in the doping container and mixes with the silicon liquid, solving the problem of the volatility of the doping elements, achieving precise doping and avoiding silicon splashing, and improving the electrical performance of semiconductor devices.
Patent Information
- Application Number
- CN202422756668.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-09-12
- Estimated Expiration
- 2034-11-12
AI Technical Summary
In the prior art, doping elements are easily volatile at high temperatures, resulting in doping loss, making it difficult to accurately determine doping dosage, and affecting the performance of semiconductor devices.
A single crystal furnace doping device is designed, which includes a doping container, an air pipe and a splash shield. The doping material slowly vaporizes and mixes with the silicon liquid in the doping container, and enters the silicon liquid through the air pipe to prevent silicon splashing.
It achieves full mixing of doping material and silicon liquid, accurately determines doping dosage, reduces vaporization speed, avoids volatilization of doping material and silicon splashing, and improves product electrical performance.
Smart Images
Figure CN223329423U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of doping in a single crystal furnace crystal pulling process, in particular to a single crystal furnace doping device and a single crystal furnace. Background Art
[0002] In existing technologies, doping techniques play a crucial role in precisely controlling a semiconductor's conductivity type (e.g., converting an intrinsic semiconductor into an n-type or p-type semiconductor), carrier concentration, mobility, and other electrical properties to meet the fabrication requirements of various semiconductor devices (e.g., transistors and diodes). Commonly used impurity elements for n-type doping include phosphorus (P) and arsenic (As). These elements have five valence electrons. When incorporated into tetravalent semiconductor materials such as silicon or germanium, they create an additional electron that becomes a freely mobile carrier, thereby increasing the material's conductivity.
[0003] In the prior art, in order to ensure that the doping elements can be fully introduced into the reaction system, specific processes are usually required to treat these impurities. For example, phosphorus (P) and arsenic (As) have different physical properties. The boiling point of arsenic (As) is 614°C, while its melting point is 817°C. This means that when the temperature reaches 614°C, arsenic will directly transform from solid to gas without passing through the liquid state. In contrast, the boiling point of phosphorus (P) is approximately 280°C. If phosphorus is heated to this temperature, it will begin to boil and produce vapor. However, if phosphorus exists in solid form and is directly converted into vapor at a lower temperature, the process is more similar to evaporation. In fact, phosphorus can also produce vapor during the sublimation process, that is, phosphorus directly changes from solid to gas, a process called sublimation.
[0004] In the existing doping process, impurities are directly introduced into the silicon liquid via an external dosing device. However, these impurities easily vaporize at high temperatures and evaporate into the air, causing doping losses. They are difficult to mix with the silicon liquid, making it difficult to accurately determine doping dosage, which in turn affects the performance of the final semiconductor device. Therefore, effectively controlling the introduction of these impurities has become a critical issue in semiconductor manufacturing. Utility Model Content
[0005] The purpose of the utility model is to provide a single crystal furnace doping device, which can reduce the vaporization speed of the doping material and make it less likely to volatilize into the air, can be mixed more fully with the silicon liquid, can more accurately determine the doping dosage, and control the electrical properties of the product.
[0006] Another object of the present invention is to provide a single crystal furnace, which can reduce the vaporization rate of the doping material through a doping device and make it less likely to evaporate into the air, can be mixed more fully with the silicon liquid, can more accurately determine the doping dosage, and control the electrical properties of the product.
[0007] The technical solution of the present utility model is achieved as follows:
[0008] A single crystal furnace doping device, comprising:
[0009] Doping container, used to place doping materials inside;
[0010] an air pipe, wherein the two ends of the air pipe are respectively a first end and a second end, and the first end leads to the doping container;
[0011] A mounting portion, wherein the doping container is provided with a mounting portion;
[0012] A splash guard is disposed on the air pipe and close to the second end.
[0013] Furthermore, a through hole is provided at the bottom of the doping container, the air pipe is passed through the through hole, and the air pipe and the through hole are sealed.
[0014] Furthermore, the through hole is opened at the center of the bottom of the doping container, and the first end of the air tube is located in the upper middle part of the doping container.
[0015] Furthermore, the trachea is a straight tube, and the trachea is arranged vertically.
[0016] Furthermore, the portion of the air pipe located inside the doping container is an overflow prevention portion, and the diameter of the overflow prevention portion gradually decreases from bottom to top.
[0017] Furthermore, the second end is provided with a flare cover.
[0018] Furthermore, the mounting portion is arranged on the top of the doping container, and a hanging hole is opened on the mounting portion for hanging on a weight of a single crystal furnace.
[0019] Furthermore, the material is granular phosphorus or arsenic.
[0020] Furthermore, the doping container is cylindrical.
[0021] A single crystal furnace comprises the single crystal furnace doping device.
[0022] Compared with the prior art, the beneficial effects of the present invention are:
[0023] Before doping, the present application can add a certain amount of doping material or doping substance into the doping container through the second end of the air pipe, and then hoist the doping device as a whole onto the single crystal furnace hammer through the mounting portion, and then lift it into the auxiliary chamber to perform the auxiliary chamber purification. Then, the single crystal furnace hammer is driven down so that the second end is immersed in the silicon liquid. The high temperature of the silicon liquid slowly vaporizes the doping material in the doping container and fully mixes and fuses with the silicon liquid, thereby allowing the doping substance to fully react with the silicon liquid. Therefore, the device can reduce the vaporization rate of the doping substance and make it difficult or even impossible for it to volatilize into the air. It can be mixed more fully with the silicon liquid, and the doping dosage can be determined more accurately or even very accurately to control the electrical properties of the product.
[0024] In addition, in the doping process of the prior art, impurities are directly added to the silicon liquid through an external doping device, which can easily cause the "silicon splashing" phenomenon. However, the present application places the doping material in the doping container in advance, and the splash-proof cover is designed to avoid the splashing of silicon liquid and solve the "silicon splashing" problem. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.
[0026] Figure 1 This is a structural schematic diagram of the single crystal furnace doping device of the utility model.
[0027] In the picture:
[0028] 1- doping container; 2- trachea; 3- overflow prevention part; 4- expansion mask;
[0029] 5-Splash guard; 6-Mounting part. DETAILED DESCRIPTION
[0030] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.
[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort are also within the scope of protection of the present invention.
[0032] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.
[0033] In the description of this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the utility model product is typically placed when in use. These terms are intended solely to facilitate the description of this utility model and to simplify the description, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0034] Furthermore, terms such as "horizontal," "vertical," and "overhanging" do not necessarily imply that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.
[0035] It should also be noted that, in the description of this utility model, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal connections between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.
[0036] The following embodiments of the present invention are described in detail with reference to the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments may be combined with each other.
[0037] Example 1
[0038] Reference Figure 1 This embodiment provides a single crystal furnace doping device, comprising:
[0039] The doping container 1 is used to place doping materials or substances inside. For example, in the case of n-type doping, the doping substance is phosphorus or arsenic;
[0040] an air pipe 2, wherein the two ends of the air pipe 2 are respectively a first end and a second end, and the first end leads to the doping container 1;
[0041] The doping container 1 is provided with a mounting portion 6, which is used to mount the doping device as a whole on the single crystal furnace weight and establish a connection with the single crystal furnace weight;
[0042] The splash guard 5 is provided on the air pipe 2 and close to the second end. Since the doped substance will escape from the second end after being vaporized, the splash guard 5 plays a role in preventing splashing.
[0043] It should be noted that the "weight" in the single crystal furnace does not refer to a "hammer" in the actual sense, but a mechanical component, which is mainly used to suspend and fix certain devices. Therefore, in this embodiment, the "weight" of the single crystal furnace is used to suspend and lift the doping device. Specifically, in this embodiment, the weight is used to ensure the positioning and stability of the doping device in the sub-chamber, as well as to perform lifting and lowering operations between different processes. In actual operation, the weight can be connected to the doping tooling through a rope, hook, chain or other mechanical transmission device. It is only necessary to hang the doping device as a whole, so that the tooling can be lifted to the appropriate position when the sub-chamber is purified, and then lowered into the silicon liquid during doping, so as to ensure the safety and accuracy of the doping process.
[0044] Simply put, the weight plays the role of suspension and lifting in the single crystal furnace to ensure that the doping device can be accurately moved to the required position, thereby ensuring the effective implementation of the doping process.
[0045] In this embodiment, the first end of the air pipe 2 can pass through the side of the doping container 1 to the middle and upper part of the doping container 1, so as to prevent the dopant from leaking out of the air pipe 2; or, a through hole is opened at the bottom of the doping container 1, and the air pipe 2 is passed through the through hole, and the air pipe 2 and the through hole are sealed or sealed. In this case, the first end of the air pipe 2 passes through the bottom of the doping container 1 into the doping container 1. In this case, the air pipe 2 is preferably designed as a straight pipe, and the port of the first end of the air pipe 2 is located in the middle and upper part of the doping container 1 (that is, the middle or above the middle), so as to prevent the dopant from leaking out of the air pipe 2. At this time, the part of the structure of the air pipe 2 located in the doping container 1 is formed as an overflow prevention part 3, which is used to prevent the dopant from overflowing or leaking from the port of the first end. Since the port of the first end is located in the middle or above the middle of the doping container 1, this limits the height of the dopant, and the height of the dopant is not higher than the height of the port of the first end.
[0046] Preferably, the diameter of the overflow prevention portion 3 gradually decreases from bottom to top. The advantage of such a design is that it can also reduce the speed at which the doping substance escapes after vaporization and improve its full mixing reaction with the silicon liquid.
[0047] In this embodiment, the doping container 1 is cylindrical, and the mounting portion 6 is disposed on the top of the doping container 1 . A hanging hole is provided on the mounting portion 6 for hanging on a weight of a single crystal furnace.
[0048] In this embodiment, a diffusion cover 4 is provided at the second end, and the diffusion cover 4 facilitates the introduction of doping material into the doping container 1 . The doping material may be granular phosphorus or arsenic.
[0049] Preferably, the doping device is entirely made of quartz material.
[0050] A method of using the doping device is as follows:
[0051] 1. Turn the entire doping device upside down so that the second end of the air pipe 2 faces upward, and place the solid granular doping material through the expansion cover 4 and into the doping container 1 through the air pipe 2;
[0052] 2. After the doping particles are placed into the doping container 1, the doping device is turned horizontally 180 degrees so that it is in an upright position;
[0053] 3. Use the mounting portion 6 to hang the doping device as a whole on the weight, and then lift it into the auxiliary chamber to perform the purification of the auxiliary chamber;
[0054] 4. Lower the weight hammer and the doping device as a whole, so that the second end of the air pipe 2 is immersed in the silicon liquid. The liquid temperature of the silicon liquid heats the doping particles and slowly vaporizes them. The vaporized doping material enters the silicon liquid along the air pipe 2 and is fully mixed and reacted with the silicon liquid.
[0055] 5. Observe the solid granular doping material in the doping container 1. After it is completely vaporized, lift the doping device into the auxiliary chamber to complete the doping.
[0056] The doping device can reduce the vaporization rate of the doping material and make it difficult or even impossible to evaporate into the air. It can be mixed with the silicon liquid more fully, and the doping dosage can be determined more accurately or even very accurately, so as to control the electrical properties of the product and improve the product quality. In addition, in the doping process of the prior art, impurities (doping materials) are directly thrown into the silicon liquid through an external feeding device. Under the action of the impact force, it is easy to cause the "silicon splashing" phenomenon. However, in the present application, the doping material is placed in the doping container 1 in advance, and the liquid temperature of the silicon liquid causes the doping material to slowly vaporize, and there will be no "silicon splashing". In addition, due to the design of the splash guard 5, when the vaporized doping material escapes, the splash guard 5 can further prevent the silicon liquid from splashing, thereby solving the "silicon splashing" problem.
[0057] Example 2
[0058] A single crystal furnace comprises the single crystal furnace doping device.
[0059] After a set amount of doping material is added to the doping container 1, the doping device is hung on the weight of the single crystal furnace through the mounting portion 6, and then lifted into the auxiliary chamber for purification of the auxiliary chamber.
[0060] Lower the weight hammer and the doping device as a whole, so that the second end of the air pipe 2 is immersed in the silicon liquid. The liquid temperature of the silicon liquid slowly vaporizes the doping particles. The vaporized doping material enters the silicon liquid along the air pipe 2 and fully mixes and reacts with the silicon liquid.
[0061] Observe the solid granular doping material in the doping container 1, and after it is completely vaporized, lift the doping device into the auxiliary chamber to complete the doping.
[0062] Through this doping device, different doping methods can be selected according to the physical properties of different impurities during the crystal pulling process in the single crystal furnace, so that impurities can be introduced into the reaction system to achieve the final target electrical performance, thereby improving product quality. It can not only reduce the vaporization rate of the doping substance and make it less likely to evaporate into the air, but also fully mix and react with the silicon liquid, accurately determine the doping dosage, control the electrical performance of the product, and avoid the "silicon splashing" phenomenon.
[0063] The beneficial effects of the technical solution of the utility model are:
[0064] The present application relates to the technical field of semiconductor material preparation, specifically to a device for doping in a crystal pulling process. Through the doping device, different doping methods can be selected according to the physical properties of different impurities during the crystal pulling process in a single crystal furnace, so that impurities can be introduced into the reaction system to achieve the final target electrical performance, thereby improving product quality. It can not only reduce the vaporization rate of the doping substance and make it less likely to evaporate into the air, but also fully mix and react with the silicon liquid, accurately determine the doping dosage, control the electrical performance of the product, and avoid the "silicon splashing" phenomenon.
[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.
[0066] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.
Claims
1. A single crystal furnace doping device, characterized in that: include: A doping container (1) for placing doping materials therein; an air pipe (2), wherein the two ends of the air pipe (2) are respectively a first end and a second end, and the first end leads to the inside of the doping container (1); A mounting portion (6), wherein the doping container (1) is provided with a mounting portion (6); A splash guard (5) is provided on the air pipe (2) and is close to the second end.
2. The single crystal furnace doping device according to claim 1, characterized in that: The bottom of the doping container (1) is provided with a through-hole, the air pipe (2) is passed through the through-hole, and the air pipe (2) and the through-hole are sealed.
3. The single crystal furnace doping device according to claim 2, characterized in that: The through hole is provided at the center of the bottom of the doping container (1), and the first end of the air pipe (2) is located in the upper middle portion of the doping container (1).
4. The single crystal furnace doping device according to claim 1, characterized in that: The trachea (2) is a straight tube, and the trachea (2) is arranged vertically.
5. The single crystal furnace doping device according to claim 4, characterized in that: The portion of the air pipe (2) located inside the doping container (1) is an overflow prevention portion (3), and the diameter of the overflow prevention portion (3) gradually decreases from bottom to top.
6. The single crystal furnace doping device according to claim 1, characterized in that: The second end is provided with a diffusion cover (4).
7. The single crystal furnace doping device according to claim 1, characterized in that: The mounting portion (6) is arranged on the top of the doping container (1), and a hanging hole is provided on the mounting portion (6) for hanging on a weight of a single crystal furnace.
8. The single crystal furnace doping device according to claim 1, characterized in that: The material is granular phosphorus or arsenic.
9. The single crystal furnace doping device according to claim 1, characterized in that: The doping container (1) is cylindrical.
10. A single crystal furnace, characterized in that: The single crystal furnace doping device comprises the single crystal furnace doping device according to any one of claims 1 to 9.