High-precision AFM probe patch alignment placement device
By etching the probe outline and patch position on the alignment die and combining it with magnetic materials, the AFM probe can be accurately positioned and automatically replaced, solving the problems of inaccurate placement and inability to automatically replace in the existing technology, and improving measurement accuracy and efficiency.
Patent Information
- Application Number
- CN202422554191.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-22
- Publication Date
- 2025-09-23
- Estimated Expiration
- 2034-10-22
AI Technical Summary
Existing AFM probe placement and positioning methods have problems such as inaccurate positioning, easy damage, and inability to automatically replace the probe, which affects measurement accuracy and efficiency.
By etching the probe outline and patch position on the alignment die, precise positioning and pasting of the probe and patch can be achieved. Magnetic materials are used to automatically replace the probe, simplifying the operation process.
The accuracy and efficiency of probe placement are improved, ensuring stable contact between the probe and the patch, reducing the risk of damage during manual operation, and shortening AFM testing time.
Smart Images
Figure CN223377333U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of AFM probes, in particular to a high-precision AFM probe patch alignment and placement device. Background Art
[0002] The atomic force microscope (AFM) is a high-resolution scanning instrument used to study the microstructure of solid surfaces, including insulators. The core of the AFM is the probe. Its basic operating principle is to investigate the surface structure and properties of materials by exploiting the extremely weak interatomic forces between the probe and the sample surface. Specifically, a microcantilever, which is extremely sensitive to weak forces, is fixed at one end and has a tiny tip at the other. The tip gently contacts the sample surface. Due to the extremely weak repulsive force between the atoms at the tip and the atoms on the sample surface, this force is controlled during scanning, causing the microcantilever with the tip to fluctuate perpendicular to the sample surface, corresponding to the equipotential surface of the force between the tip and the sample surface atoms. Optical or tunneling current detection methods are then used to measure the position change of the microcantilever at each scan point, thereby obtaining information about the sample's surface topography. Therefore, precise positioning and adjustment of the probe are crucial for obtaining high-quality imaging data.
[0003] Normally, before AFM testing, it is necessary to select a suitable probe first, position the selected probe and install it on the probe holder (probe patch) in a clean environment, and then perform the test. Existing probe placement and positioning methods mainly rely on manual operation or simple mechanical devices. However, these methods and devices often have the risk of inaccurate placement, long time consumption, and damage to the probe tip. In addition, the existing technology often adopts means and methods such as pasting or electroplating to fix the probe, which is not only complicated to operate, but also has the problem of poor contact between the probe and the patch, which makes it difficult to ensure the stability of the probe and affects the measurement accuracy. In addition, the probe needs to be replaced during the AFM test process, and the existing probe installation devices are unable to automatically replace the probe. The test needs to be suspended in order to reinstall the probe, which leads to the problem of long AFM testing time.
[0004] Therefore, how to accurately and reliably place the AFM probe and facilitate the replacement of the probe during the AFM test process remains an urgent problem to be solved. Utility Model Content
[0005] In response to the above-mentioned problems and to achieve the above-mentioned objectives, the present invention provides a high-precision AFM probe patch alignment and placement device. Through micro-nano processing, the probe outline is etched on one side of an alignment die such as a Si wafer or GaN wafer, and the patch position is etched on the other side. This facilitates the positioning and installation of the probe and patch, significantly improving the accuracy and efficiency of probe placement, ensuring stable and reliable contact between the probe and the patch, and facilitating probe replacement during AFM testing. The specific technical solution is as follows:
[0006] The utility model provides a high-precision AFM probe patch alignment and placement device, comprising an alignment die and an alignment placement position arranged on the alignment die; the alignment placement position comprises an AFM probe outline etched on one side of the alignment die, and a patch loading groove and an AFM probe positioning groove etched on the other side of the alignment die; the patch loading groove overlaps with the AFM probe outline at the area where the AFM probe and the probe patch are pasted and fixed; the AFM probe positioning groove is located on one side of the patch loading groove, and overlaps with the outline of the cantilever, needle tip and part of the needle holder of the AFM probe; the sum of the etching depth of the AFM probe outline and the etching depths of the patch loading groove and the AFM probe positioning groove is equal to the thickness of the alignment die, that is, the AFM probe outline is partially engraved into a hollow structure; the probe patch for AFM detection is placed in the patch loading groove, and the AFM probe for AFM detection is placed on the patch through the AFM probe outline, so that the AFM probe and the probe patch can be aligned and placed.
[0007] Preferably, in the aforementioned high-precision AFM probe patch alignment and placement device, the alignment mold is a sheet made of Si wafer, GaN wafer, or any one of SiC, SiN, and Si3N4.
[0008] Preferably, in the aforementioned high-precision AFM probe patch alignment and placement device, the thickness of the alignment die is 100 μm to 800 μm.
[0009] Preferably, in the aforementioned high-precision AFM probe patch alignment and placement device, the depth of the AFM probe contour line is 50 μm to 400 μm.
[0010] Preferably, in the aforementioned high-precision AFM probe patch alignment and placement device, the depths of the patch loading groove and the AFM probe positioning groove are 50 μm to 400 μm.
[0011] Preferably, in the aforementioned high-precision AFM probe patch alignment and placement device, the probe patch is made of an iron sheet, a nickel sheet or other magnetically attractive materials.
[0012] Preferably, the aforementioned high-precision AFM probe patch alignment and placement device has ear holes on both sides of the middle of the AFM probe contour for facilitating the removal and placement of the AFM probe, and ear grooves on both sides of the middle of the patch loading groove for facilitating the removal and placement of the probe patch.
[0013] Preferably, the aforementioned high-precision AFM probe patch alignment and placement device has a plurality of alignment and placement positions on the alignment die.
[0014] The beneficial effects of the utility model are:
[0015] 1) The placement device of the utility model etches the probe outline on one side of the alignment die and etches the patch position on the other side, so that the probe and patch can be positioned and installed, reducing the operator's manual intervention during the probe placement process and avoiding probe damage or measurement errors caused by improper operation. It can achieve an alignment accuracy of 10μm for the probe patch, significantly improving the accuracy and efficiency of probe placement.
[0016] 2) The device of the utility model can position and place the probe and the patch, and is easy to operate. The contact between the probe and the patch during the placement process is stable and reliable, which avoids the shortcomings of traditional pasting or electroplating methods and improves the stability of the probe and the accuracy of AFM testing.
[0017] 3) The alignment mold of the device of the present invention is preferably made of Si wafer or GaN wafer, which can be micro-nano processed by a deep silicon etcher to ensure high precision requirements. It is also cheap and has low mold manufacturing cost, which is conducive to popularization and production and has good practicality.
[0018] 4) When the patch is made of iron material, the device of this utility model can absorb the iron patch through the magnetic control performance of the AFM machine, realizing automatic and continuous needle replacement during the AFM test process without manual operation, greatly reducing the AFM test time and improving AFM test efficiency.
[0019] In summary, the utility model can achieve accurate and rapid positioning and pasting of the AFM probe and the patch by etching probe positions and patch positions on both sides of the alignment die, and can realize automatic replacement of the probe during the AFM test, which has good practical value. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 This is a schematic diagram of the structure of the high-precision AFM probe patch alignment and placement device of the utility model;
[0021] Figure 2 This is a schematic diagram of the outline of the probe of the utility model;
[0022] Figure 3 This is a schematic diagram of the patch loading groove and AFM probe positioning groove of the utility model;
[0023] Figure 4 This is a schematic diagram of the alignment and placement of the utility model;
[0024] Figure 5 This is a schematic diagram of the use process of the utility model.
[0025] In the figure: 1. Alignment die; 2. Alignment placement; 3. AFM probe outline; 4. Patch loading groove; 5. AFM probe positioning groove; 6. AFM probe; 7. Probe patch; 8. Ear hole; 9. Ear slot. DETAILED DESCRIPTION
[0026] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments and drawings.
[0027] It should be noted that the purpose of the invention of this utility model is to solve the problems of existing probe placement and positioning methods that mainly rely on manual operation or simple mechanical devices, which have the problems of inaccurate probe placement, easy damage to the probe tip, and poor contact between the probe and the patch. A high-precision AFM probe patch alignment and placement device is proposed, such as Figure 1 As shown, the AFM probe patch alignment and placement device mainly comprises an alignment die 1 and a plurality of alignment placement positions 2 machined on the alignment die 1 through micro-nano processing. The present invention preferably uses a deep silicon etcher to perform micro-nano processing on the alignment die 1. Therefore, the alignment die 1 is preferably made of a Si or GaN wafer. However, since silicon wafers are easily broken when they are too thin, the thickness of the alignment die 1 should not be too thin when using silicon wafers, and should be controlled to be above 300μm. When GaN is used as the preparation material, the material itself is generally thin and not easy to etch very deeply, so the thickness is controlled to be between 100 and 300μm. It is not excluded that in other embodiments, other technical means can be used to process sheets of other different materials (including sheets made of any of SiC, SiN, and Si3N4). Therefore, the material of the alignment die 1 is not limited to the materials listed above. It only needs to be able to be processed according to the design concept of the present invention and achieve the required accuracy to accurately align the probe and patch.
[0028] In the present invention, the alignment placement position 2 includes an AFM probe outline 3 etched on one side of the alignment die 1, and a patch loading groove 4 and an AFM probe positioning groove 5 etched on the other side of the alignment die 1; the patch loading groove 4 overlaps with the AFM probe outline 3 at the area where the AFM probe 6 and the probe patch 7 are pasted and fixed, and is hollowed out along the AFM probe outline 3 line; the AFM probe positioning groove 5 is located on one side of the patch loading groove 4, for accommodating the AFM probe 6 cantilever and needle tip and part of the needle holder, and is hollowed out along the AFM probe outline 3 line. That is, an AFM probe outline 3 is etched on one side of the alignment die 1, and a patch loading groove 4 and an AFM probe positioning groove 5 are etched on the other side. The areas of the patch loading groove 4 and the AFM probe positioning groove 5 correspond to the area of the AFM probe outline 3, and the sum of the etching depths of the two is equal to the thickness of the alignment die 1, so that a groove for positioning the patch is formed in the unetched part, and a groove hole for positioning the probe is formed in the etched part, so that the probe can be accurately aligned with the position on the patch and ensure good contact between the two, thereby reducing the operator's manual intervention during the probe placement process, avoiding probe damage or measurement errors caused by improper operation, and improving the accuracy and efficiency of probe placement, and overcoming the problem of poor contact between the probe and the patch that exists in traditional pasting or electroplating methods.
[0029] Moreover, in order to facilitate the taking and placing of the AFM probe 6 and the probe patch 7, the AFM probe profile 3 of the present invention is provided with ear holes 8 on both sides of the middle part, and the patch loading groove 4 is provided with ear grooves 9 on both sides of the middle part. In addition, in order to solve the problem that the probe cannot be automatically replaced during the AFM test process, the probe patch 7 in the present invention is preferably made of iron sheets, nickel sheets or other magnetically attractive materials, so that during use, the magnetic control performance of the AFM machine can be utilized to adsorb the iron sheet to achieve automatic needle replacement, so that the needle can be continuously replaced without manual operation, greatly reducing the AFM test time and improving the AFM test efficiency. In the case where automatic needle replacement is not required, the material of the probe patch 7 can also be other conventional materials in the field.
[0030] The following describes the process of preparing the AFM probe patch alignment and placement device, taking Si wafer and GaN wafer as examples of alignment die 1 materials.
[0031] Obviously, the embodiments described are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention. Specific embodiments are as follows:
[0032] Example 1: Preparation of AFM probe placement device using Si sheet material
[0033] S1: Spin-coat SUN-9i photoresist (negative resist) onto a cleaned 500μm Si wafer at 1400rpm for 40s, with a thickness of 6μm. Bake the spin-coated photoresist at 100°C for 100s.
[0034] S2: After pre-baking the photoresist, the sample (Si wafer) was exposed using a photolithography machine at an exposure dose of 120 mJ / cm². After exposure, the sample was placed in AZ300MIF developer for 2 minutes, rinsed with deionized water, and dried with a nitrogen gun.
[0035] S3: Use a deep silicon etcher to etch the exposed and developed sample. The specific etching parameters are as follows:
[0036] Deposition cycle: C4F8 volume flow rate: 250 sccm, pressure: 20 mTorr, RF power: 0 W, ICP power: 1500 W, temperature: 5 °C, time: 2 s;
[0037] Etching cycle 1: SF6 volume flow rate: 700 sccm, pressure: 40 mTorr, RF power: 150 W, ICP power: 2800 W, temperature: 5 °C, time: 1 s;
[0038] Etching cycle 2: 700 sccm SF6, pressure: 40 mTorr, RF power: 0 W, ICP power: 2800 W, temperature: 5 ° C, time: 3 s; etching depth is 250 μm, and the corresponding probe profile is obtained, as shown Figure 2 As shown;
[0039] S4: After deep silicon etching, a sample with a probe outline is obtained. The remaining photoresist on the surface is removed using a degumming solution, and the sample is cleaned with isopropyl alcohol for 3 minutes. After deionized water rinsing, it is blown dry with a nitrogen gun.
[0040] S5: Spray photoresist onto the wafer using a sprayer and pre-bake at 110°C for 3 minutes, with a thickness of 20 μm. After pre-bake, UV exposure is performed using a UV imprinter at a dose of 1300 mJ / cm². Post-bake is performed at 110°C for 90 seconds. The purpose of spraying photoresist is to prevent over-etching of the wafer during etching.
[0041] S6: Flip the sample and spin-coat SUN-9i on the other side of the Si wafer at 1400 rpm for 40 seconds, with a thickness of 6 μm. The spin-coated photoresist is then baked at 100°C for 100 seconds.
[0042] S7: After pre-baking the photoresist, the sample (Si wafer) was exposed using a photolithography machine at an exposure dose of 120 mJ / cm². A post-bake was performed at 110°C for 90 seconds. After exposure, the sample was developed in AZ300MIF developer for 2 minutes, rinsed with deionized water, and dried with a nitrogen gun.
[0043] S8: Use a deep silicon etcher to etch the exposed and developed sample. The etching parameters are as follows:
[0044] Deposition cycle: C4F8 volume flow rate: 250 sccm, pressure: 20 mTorr, RF power: 0 W, ICP power: 1500 W, temperature: 5 °C, time: 2 s;
[0045] Etching cycle 1: SF6 volume flow rate: 700 sccm, pressure: 40 mTorr, RF power: 150 W, ICP power: 2800 W, temperature: 5 °C, time: 1 s;
[0046] Etch cycle 2: 700 sccm SF6, pressure: 40 mTorr, RF power: 0 W, ICP power: 2800 W, temperature: 5 °C, time: 3 s;
[0047] The etching depth is 250 μm, and the iron sheet is prepared and the probe part is etched through, such as Figure 3 shown.
[0048] S9: Use a degumming solution to remove the glue from the obtained sample, and use isopropyl alcohol and water to clean it to obtain the mold for placing the probe (i.e., aligning with placement position 2). Figure 4 shown.
[0049] Example 2: Fabrication of an AFM probe placement device using GaN material
[0050] S1: Spin-coat AZ-4620 photoresist as a negative resist on a cleaned 200μm GaN wafer. Spin-coating parameters are 600 rpm for 5 seconds, 2500 rpm for 30 seconds, and a 3μm thickness. Bake the spin-coated photoresist at 90°C for 80 seconds.
[0051] S2: After pre-baking the photoresist, the sample (GaN wafer) was exposed using contact exposure. Exposure conditions were: 3 seconds in hard mode, followed by 80 seconds of heating at 110°C after exposure. The photomask was removed and exposure continued in flood-e mode for 30 seconds. After exposure, the sample (GaN wafer) was placed in developer for 45 seconds, rinsed with deionized water several times, and dried with a nitrogen gun.
[0052] S3: Use an inductively coupled plasma etcher to etch the exposed and developed sample (GaN wafer). The specific etching parameters are Cl2 30 sccm, BCl3 15 sccm, RF power 50W, and ICP power 300W. The etching depth is 100μm, and the corresponding probe profile is obtained, as shown in the figure below. Figure 2 As shown;
[0053] S4: After ICP etching, a sample with a probe outline is obtained. The remaining photoresist on the surface is removed using a degumming solution, and the sample is cleaned with isopropyl alcohol for 3 minutes. After rinsing with clean water, it is blown dry with a nitrogen gun.
[0054] S5: Use a sprayer to spray photoresist onto the sample wafer and pre-bake the film at 110°C for 3 minutes. After pre-bake, use a UV printer to expose the film to UV light for 20 seconds. Post-bake at 110°C for 90 seconds. The purpose of spraying photoresist is to prevent over-etching of the carrier wafer during etching.
[0055] S6: Flip the sample and spin-coat AZ-5214 on the other side of the GaN wafer at 3000 rpm for 30 seconds, with a thickness of 1.5 μm. The spin-coated photoresist is then baked at 95°C for 90 seconds.
[0056] S7: After pre-baking the photoresist, the sample was exposed using a contact exposure method in hard mode for 3.2 seconds. After exposure, the sample was placed in a developer for 45 seconds, rinsed with deionized water several times, and dried with a nitrogen gun.
[0057] S8: Use an inductively coupled plasma etcher to etch the exposed and developed sample. The etching parameters are Cl2 30 sccm, BCl3 15 sccm, RF power 50 W, ICP power 300 W, and the etching depth is 100 μm. Prepare the iron sheet part and etch through the probe part. Figure 3 shown.
[0058] S9: Use a degumming solution to remove the obtained sample (GaN wafer), and rinse it with acetone, isopropyl alcohol and deionized water to finally obtain a mold for placing the probe (i.e., aligning with placement position 2), as shown in FIG. Figure 4 shown.
[0059] The use process of this utility model is as follows: Figure 5As shown, the probe patch 7 for AFM detection is placed in the patch loading groove 4, and the AFM probe 6 for AFM detection is placed on the patch through the AFM probe outline 3, so that the AFM probe 6 and the probe patch 7 can be aligned and placed, and then the two can be glued and removed. The operation is extremely simple, and the contact between the probe and the patch during the placement process is very stable and reliable, avoiding the shortcomings of traditional pasting or electroplating methods, improving the stability of the probe and the accuracy of AFM testing. After testing, the utility model can achieve a probe patch with an alignment accuracy of 10μm, which has very good practical value and promotion value.
[0060] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the present invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims, not the foregoing description, and it is intended that all variations within the meaning and scope of the appended claims be encompassed within the present invention. Any reference sign in a claim should not be construed as limiting the claim to which it relates.
[0061] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.
Claims
1. A high-precision AFM probe patch alignment and placement device, characterized by: It comprises an alignment die (1), and an alignment placement position (2) arranged on the alignment die (1); the alignment placement position (2) comprises an AFM probe outline (3) etched on one side of the alignment die (1), and a patch loading groove (4) and an AFM probe positioning groove (5) etched on the other side of the alignment die (1); The patch loading groove (4) overlaps with the AFM probe outline (3) at the area where the AFM probe (6) and the probe patch (7) are attached and fixed; The AFM probe positioning groove (5) is located on one side of the patch loading groove (4), and overlaps with the contours of the cantilever and needle tip of the AFM probe (6) and part of the needle holder; The sum of the etching depth of the AFM probe profile (3) and the etching depths of the patch loading groove (4) and the AFM probe positioning groove (5) is equal to the thickness of the quasi-mold (1), that is, the AFM probe profile (3) is partially etched into a hollow structure; The probe patch (7) for AFM detection is placed in the patch loading groove (4), and the AFM probe (6) for AFM detection is placed on the patch through the AFM probe outline (3), so that the AFM probe (6) and the probe patch (7) can be aligned and placed.
2. The high-precision AFM probe patch alignment and placement device according to claim 1, characterized in that: The alignment die (1) is a sheet made of Si, GaN, or any one of SiC, SiN, and Si3N4.
3. The high-precision AFM probe patch alignment and placement device according to claim 2, characterized in that: The thickness of the alignment die (1) is 100 μm to 800 μm.
4. The high-precision AFM probe patch alignment and placement device according to claim 1, characterized in that: The depth of the AFM probe profile (3) is 50 μm to 400 μm.
5. The high-precision AFM probe patch alignment and placement device according to claim 1, characterized in that: The depths of the patch loading groove (4) and the AFM probe positioning groove (5) are 50 μm to 400 μm.
6. The high-precision AFM probe patch alignment and placement device according to claim 1, characterized in that: The probe patch (7) is made of magnetic materials including iron and nickel.
7. The high-precision AFM probe patch alignment and placement device according to any one of claims 1 to 6, characterized in that: The middle of the AFM probe profile (3) is provided with ear holes (8) on both sides for facilitating the placement of the AFM probe (6), and the middle of the patch loading groove (4) is provided with ear grooves (9) on both sides for facilitating the placement of the probe patch (7).
8. The high-precision AFM probe patch alignment and placement device according to claim 7, characterized in that: There are multiple alignment placement positions (2) on the alignment die (1).