Sputtering equipment

Abstract

A sputtering apparatus includes: a chamber; a target provided inside the chamber; a coil pipe disposed adjacent to the target; the coil pipe is arranged on the moving component, and the moving component is configured to adjust the position of the coil pipe; and a coil shield disposed inside the chamber so as to overlap at least a portion of the coil. An opening is defined in the coil shield.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to a sputtering apparatus. BACKGROUND

[0002] With the development of information technology, the use of display devices, which are a connection medium between users and information, is increasing. A thin film deposition process can be performed to manufacture a display device.

[0003] The thin film deposition process can be performed based on various process methods. For example, a thin film deposition process can be performed using a sputtering apparatus. The sputtering apparatus can apply electric energy to ions in plasma, such that the ions collide with a target and then allow target atoms ejected (i.e., sputtered) from the target to be deposited on a substrate. SUMMARY

[0004] In a thin film deposition process using a sputtering apparatus, it can be desirable to properly control the amount of material (e.g., moisture) for determining the quality of a thin film when a pressure condition close to a vacuum is formed in a chamber of the sputtering apparatus to improve the quality of the thin film.

[0005] Embodiments provide a sputtering apparatus capable of controlling the amount of material for determining the quality of a thin film when a pressure condition close to a vacuum is formed in a chamber of the sputtering apparatus.

[0006] According to an embodiment of the present disclosure, a sputtering apparatus includes a chamber, a target disposed inside the chamber, a coil disposed adjacent to the target, a moving member on which the coil is disposed, wherein the moving member is configured to adjust a position of the coil, and a coil shield disposed inside the chamber to overlap at least a portion of the coil, wherein an opening is defined in the coil shield.

[0007] In an embodiment, the sputtering apparatus can further include a substrate disposed inside the chamber. In such an embodiment, the target can include a material to be deposited on the substrate. In such an embodiment, one surface of the substrate can face a plane in which the coil is disposed. In such an embodiment, the coil can be disposed between the substrate and the moving member.

[0008] In an embodiment, the coil can be movable in a first direction, the first direction being a direction perpendicular to the plane in which the coil is disposed.

[0009] In an embodiment, the moving member can be a stage configured to adjust a height at which the coil is disposed.

[0010] In an embodiment, the moving member can include a screw or a gas cylinder.

[0011] In an embodiment, the screw or the cylinder can be provided as a plurality, and the moving member can adjust the height of the coil arrangement.

[0012] In an embodiment, the coil shield can be disposed between the base plate and the coil.

[0013] In an embodiment, the coil shield can include a first coil shield and a second coil shield disposed on the first coil shield. In such an embodiment, the first coil shield and the second coil shield can be in slidable contact with each other.

[0014] In an embodiment, a first opening can be defined in the first coil shield, and a second opening can be defined in the second coil shield. In such an embodiment, each of the first opening and the second opening can have a polygonal, circular, or elliptical planar shape.

[0015] In an embodiment, the first coil shield and the second coil shield can have the same shape as each other. In such an embodiment, each of the first opening and the second opening can be provided as a plurality.

[0016] In an embodiment, the first coil shield and the second coil shield can be disposed in a first sliding state or a second sliding state. In such an embodiment, in the first sliding state, the first opening and the second opening can completely overlap each other. In such an embodiment, in the second sliding state, the first opening and the second opening can not overlap each other.

[0017] In an embodiment, the coil shield can have a quadrilateral cross-section.

[0018] In an embodiment, the coil shield can include a first end portion and a second end portion. In such an embodiment, the coil shield can include a protrusion at each of the first end portion and the second end portion.

[0019] In an embodiment, the coil can include a first portion containing an elastic material or a flexible material.

[0020] In an embodiment, at least a portion of the first portion can correspond to an inlet through which a refrigerant flows.

[0021] According to another embodiment of the disclosure, there is provided a sputtering apparatus including a chamber, a target disposed inside the chamber, a coil disposed adjacent to the target, and a coil shield disposed inside the chamber to overlap the coil, wherein the coil shield includes a first coil shield and a second coil shield disposed on the first coil shield, and the first coil shield and the second coil shield are slidably in contact with each other.

[0022] In an embodiment, the sputtering apparatus can further include a substrate disposed inside the chamber. In such an embodiment, the target can contain a material to be deposited on the substrate. In such an embodiment, one surface of the substrate can face a plane in which the coil is disposed. In such an embodiment, the coil shield can be disposed between the substrate and the coil.

[0023] In an embodiment, a first opening can be defined in the first coil shield, and a second opening can be defined in the second coil shield. In such an embodiment, each of the first opening and the second opening can have a planar shape of a polygon, a circle, or an ellipse.

[0024] In an embodiment, the first coil shield and the second coil shield can have the same shape as each other. In such an embodiment, each of the first opening and the second opening can be provided as a plurality of openings.

[0025] In an embodiment, the coil can include a first portion containing an elastic material or a flexible material. In such an embodiment, at least a portion of the first portion can correspond to an inlet through which a refrigerant flows. BRIEF DESCRIPTION OF DRAWINGS

[0026] Embodiments of the disclosure will become more fully understood from the detailed description and accompanying drawings, in which:

[0027] Figure 1 is a schematic block diagram to illustrate a principle of a sputtering apparatus according to an embodiment of the disclosure;

[0028] Figure 2 is a schematic sectional view to illustrate a sputtering apparatus according to an embodiment of the disclosure;

[0029] Figure 3 is a schematic sectional view to illustrate a sputtering apparatus according to another embodiment of the disclosure;

[0030] Figure 4 and Figure 5 is a plan view to schematically illustrate a shape of a coil according to an embodiment of the disclosure;

[0031] Figure 6 is a schematic plan view of a coil shield according to an embodiment of the present disclosure;

[0032] Figure 7 and Figure 8 Schematic cross-sectional views of coil shields with different opening ratios; and

[0033] Figure 9 is a schematic cross-sectional view of a coil shield according to another embodiment of the present disclosure. Specific embodiments

[0034] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the present disclosure may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art. Like reference numerals refer to like elements throughout.

[0035] It will be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a "first element," "component," "region," "layer," or "section" discussed below may be referred to as a second element, component, region, layer, or section without departing from the teachings herein.

[0036] The terms used herein are only used to describe the purpose of specific embodiments and are not intended to be restrictive. As used herein, "one", "said" and "at least one" do not represent quantitative limitations and are intended to include both singular and plural numbers, unless the context clearly indicates otherwise. Therefore, in a claim, a reference to an "one" element followed by a reference to the "said" element includes one element and multiple elements. For example, unless the context clearly indicates otherwise, "an element" has the same meaning as "at least one element." "At least one" should not be interpreted as limiting "one" or "one". "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It will be further understood that the terms "including" and / or "comprising" when used herein clearly indicate the presence of stated features, regions, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, parts and / or their groups.

[0037] It will be understood that when an element is referred to as being “on” another element, it can be directly on the other element or intervening elements may be present therebetween. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present.

[0038] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as illustrated in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, the element described as being on the "lower" side of the other element will then be oriented on the "upper" side of the other element. Thus, the term "lower" can encompass both "lower" and "upper" orientations, depending on the specific orientation of the figures. Similarly, if the device in one of the figures is turned over, the element described as being "below" or "beneath" the other element will then be oriented "above" the other element. Thus, the term "lower" or "under" can encompass both "lower" and "upper" orientations.

[0039] As used herein, "about" or "approximately" is inclusive of the stated value and means within an acceptable range of deviation of the particular value determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, 20%, 10%, or 5% of the stated value.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly defined as such herein.

[0041] The embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments. As such, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions illustrated herein, but rather include deviations in shapes that result from, for example, manufacturing. For example, a region illustrated or described as flat may typically have rough and / or nonlinear features. Furthermore, sharp corners that are illustrated may be rounded. Therefore, the regions illustrated in the drawings are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the present claims.

[0042] The present disclosure generally relates to a sputtering apparatus. Hereinafter, a sputtering apparatus according to an embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0043] Figure 1 A schematic block diagram illustrating the principle of a sputtering device according to an embodiment of the present disclosure. Figure 2 is a schematic cross-sectional view illustrating a sputtering apparatus according to an embodiment of the present disclosure.

[0044] refer to Figure 1 and Figure 2 An embodiment of the sputtering apparatus 1000 may include a chamber CB, a target T, a backing plate BP, a power supply PS, a magnet MGN, a coil CP, a coil shield S, and a controller 400 .

[0045] The sputtering device 1000 can form a film (eg, a thin film) on a substrate SUB. The substrate SUB may be a substrate for manufacturing a panel of a display device. However, the present disclosure is not limited thereto, and the substrate SUB may be a semiconductor substrate for manufacturing a semiconductor device such as a wafer.

[0046] The chamber CB may provide a deposition process space for inducing film formation of the substrate SUB. In one embodiment, for example, the chamber CB may have a circular structure or a quadrilateral structure, or may have other various types of structures.

[0047] The chamber CB may include at least one selected from metal materials such as stainless steel, aluminum (Al), titanium (Ti), or copper (Cu), materials such as quartz or glass whose interior can be observed, and materials such as ceramics having a thermal insulation effect. However, the present disclosure is not limited thereto.

[0048] The chamber CB may include a substrate support member 100 on which the substrate SUB is disposed (or mounted). The substrate support member 100 may be a carrier for carrying the substrate SUB. The substrate SUB may be mounted and positioned on the top surface of the substrate support member 100. Various devices configured with any one of or a combination of lift pins, an electrostatic chuck, and an adhesive chuck may be applied to the substrate support member 100. In some embodiments, the substrate support member 100 may rotate the substrate SUB while a deposition process is performed on the substrate SUB. In some embodiments, the chamber CB may have an inlet / outlet formed therein to transport the substrate SUB into the chamber CB and to transport the substrate SUB out of the chamber CB.

[0049] A certain level of vacuum state may be maintained inside the chamber CB so that the deposition process is smoothly performed. In some embodiments, the chamber CB may be connected to a vacuum pump for forming a vacuum state in the chamber CB.

[0050] An inert gas for generating plasma may be provided (eg, contained) inside the chamber CB. In some embodiments, the chamber CB may be connected to a gas supplier to be provided with an inert gas such as argon (Ar).

[0051] The target T may be disposed inside the chamber CB. The target T may include a deposition material sputtered by the plasma generated inside the chamber CB. The target T may be disposed on one surface of the back plate BP facing the substrate SUB. The target T may include a material such as a metal to be deposited on the substrate SUB. In one embodiment, for example, when manufacturing an organic light-emitting display device, the target T may include at least one of various metals selected from various metals such as aluminum (Al), molybdenum (Mo), copper (Cu), gold (Au) and platinum (Pt) for forming electrodes, etc., or may include indium tin oxide (ITO) or the like as a film-forming material for a transparent electrode. In some embodiments, the target T may be provided in plurality. However, the present disclosure is not limited thereto. The target T may include various materials known in the art as materials for the target T, and may be provided as a single one.

[0052] The back plate BP may be disposed opposite to the substrate SUB, and one surface of the back plate BP facing the substrate SUB may support the target T. In some embodiments, the back plate BP may rotate while supporting the target T. In some embodiments, the width of the back plate BP may be equal to the width of the target T. In some embodiments, the back plate BP may be disposed to overlap the target T.

[0053] The back plate BP may be connected to a power supply PS supplying radio frequency (RF) power or direct current (DC) power. The back plate BP may receive a voltage applied from the power supply PS to function as a cathode in plasma discharge.

[0054] When a voltage is applied to the back plate BP, plasma discharge may occur inside the chamber CB. An inert gas such as argon (Ar) may be ionized by the plasma discharge, and the ionized particles may be accelerated toward the target T to collide with the target T. Accordingly, atoms constituting the target T are ejected to be deposited on the substrate SUB.

[0055] The magnet MGN may be positioned to face the other surface of the back plate BP opposite to the target T and form a magnetic field. The magnet MGN may have a plurality of magnets having opposite polarities alternately disposed therein so that a magnetic field can be formed on the entire surface of the target T.

[0056] In one embodiment of the present disclosure, Figure 2 As shown in FIG, the magnet MGN may be disposed outside the chamber CB. However, the present disclosure is not limited thereto. In some embodiments, the magnet MGN may be disposed inside the chamber CB.

[0057] The coil CP may be disposed adjacent to the target T. In some embodiments where a plurality of targets T are provided, the coil CP may be disposed between the targets T. In some embodiments, the coil CP may be disposed so as not to overlap with the target T in plan view. However, the present disclosure is not limited thereto. According to another embodiment, the coil CP and the target T may be disposed so as to overlap with each other. In some embodiments, one surface of the coil CP may be disposed so as to face one surface of the substrate SUB. For example, one surface of the substrate SUB may face the plane on which the coil CP is disposed.

[0058] In some embodiments, at least a portion of the coil CP may be disposed in the chamber CB, and at least another portion of the coil CP may be disposed outside the chamber CB. Figure 4 The portion of the coil CP disposed only inside the chamber CB and the position and structural characteristics of the coil CP associated with the chamber CB are described.

[0059] The coiled pipe CP may include a tube through which a refrigerant (or cooling fluid), such as a coolant, can flow. In one embodiment, for example, the coiled pipe CP may be formed from a hollow metal tube, at least a portion of which contains at least one selected from copper (Cu), brass, and aluminum (Al), and the refrigerant can flow through the hollow portion. In some embodiments, the temperature of the refrigerant can be controlled based on the characteristics of the thin film to be formed during the sputtering process.

[0060] In one embodiment, the coil CP includes a refrigerant to adsorb water (H2O) in the chamber CB. When the oxide semiconductor layer is formed on the substrate SUB, the quality of the thin film may deteriorate if the water (H2O) in the chamber CB is not adsorbed. For example, when the oxide semiconductor layer is formed on the substrate SUB, if the water (H2O) in the chamber CB is not adsorbed, it may be difficult to manufacture a highly reliable thin film transistor.

[0061] The sputtering apparatus 1000 according to an embodiment of the present disclosure includes the coil pipe CP in which the refrigerant flows, so that the coil pipe CP can adsorb water (H 2 O) in the chamber CB and can manufacture a highly reliable thin film transistor.

[0062] The coil CP can control temperature changes of the target T. For example, when ions collide with the target T during a sputtering process and the temperature of the target T increases, the coil CP can suppress the temperature increase of the target T.

[0063] In some embodiments, the sputtering apparatus 1000 may further include a moving member MP disposed below the coil CP. In the present disclosure, a lower direction may be defined as a gravity direction, and an upper direction may be defined as a direction opposite to the gravity direction, for example, a first direction DR1.

[0064] The moving member MP can support the coil pipe CP. The coil pipe CP can be provided on the moving member MP.

[0065] The moving member MP can control (or adjust) the position of the coil pipe CP. The moving member MP can move the coil pipe CP. In an embodiment, for example, the coil pipe CP is provided on the moving member MP so that the moving member MP and the coil pipe CP can move together.

[0066] The moving member MP can adjust the position of the coil pipe CP with respect to the position of the substrate SUB on which the target T is deposited. The moving member MP can move the coil pipe CP in a first moving direction. The moving member MP can move the coil pipe CP in a second moving direction opposite to the first moving direction. In an embodiment, for example, the moving member MP can move the coil pipe CP in a direction of the first direction DR1 which is perpendicular to a plane on which the substrate SUB is provided or toward the substrate SUB so that the substrate SUB and the coil pipe CP become close to each other. In an embodiment, for example, the moving member MP can move the coil pipe CP in a direction opposite to the first direction DR1 so that the substrate SUB and the coil pipe CP become apart from each other.

[0067] In some embodiments, the coil pipe CP can move in the first direction DR1 which is a direction of the height thereof. However, the present disclosure is not limited thereto. In some embodiments, the coil pipe CP can move in a planar direction (for example, a second direction DR2 (see Figure 4 ) or a third direction DR3 (see Figure 4 )) which is a direction in which a plane on which the substrate SUB is provided extends.

[0068] In some embodiments, the moving member MP can be a table capable of height adjustment. In an embodiment, for example, the table can be configured to adjust (or control) the height at which the coil pipe CP is provided. In some embodiments, the moving member MP can include a cylinder or a screw capable of height adjustment. In an embodiment, for example, the cylinder or the screw can be configured to adjust the height at which the coil pipe CP is provided.

[0069] In some embodiments in which the moving member MP includes a cylinder or a screw capable of height adjustment, the cylinder or the screw can be provided as a plurality to fix a partial area of the coil pipe CP. In an embodiment, for example, four or more cylinders can be used to fix four or more areas of the coil pipe CP. In an embodiment, for example, four or more screws can be used to fix four or more areas of the coil pipe CP.

[0070] In some embodiments, the moving member MP can further include a displacement sensor. The moving member MP includes the displacement sensor to detect the position of the coil pipe CP and adjust the flatness at the height at which the coil pipe CP is provided while adjusting the height of the coil pipe CP.

[0071] The sputtering apparatus 1000 according to an embodiment of the disclosure can adjust the amount of adsorption of water (H2O) in the chamber CB by position adjustment of the coil pipe CP. In an embodiment, for example, when adjusting the height of the coil pipe CP, the distance between the coil pipe CP and the substrate SUB can be changed. As the distance between the coil pipe CP and the substrate SUB changes, the distance of the water (H2O) in the chamber CB from the coil pipe CP can be changed. In an embodiment, for example, in the case where the water (H2O) is located closer to the substrate SUB than the coil pipe CP, as the coil pipe CP becomes closer to the substrate SUB, the water (H2O) can be further adsorbed to the coil pipe CP.

[0072] The coil pipe shield S can be provided to overlap at least a portion of the coil pipe CP in a plan view. In an embodiment, for example, the coil pipe shield S can overlap at least a portion of the coil pipe CP in a plan view in which the coil pipe CP or the substrate SUB is provided. The coil pipe shield S can be located between the coil pipe CP and the substrate SUB. The coil pipe shield S can overlap at least a portion of the coil pipe CP and protect at least a portion of the coil pipe CP, thereby reducing the amount of deposition of the target T deposited on the coil pipe CP.

[0073] The coil pipe shield S can be provided with an opening H (see Figure 6 ), and the sputtering apparatus 1000 can adjust the amount of adsorption of water (H2O) in the chamber CB by opening rate adjustment of the opening H. This will be described later with reference to Figure 5 .

[0074] In some embodiments, the sputtering apparatus 1000 can further include a shield support part SP for supporting the coil pipe shield S. The coil pipe shield S can be provided on the shield support part SP. The coil pipe shield S can be supported by the shield support part SP.

[0075] The coil pipe shield can be movable. In an embodiment, for example, the coil pipe shield S can be movable in a direction in which a plan of the coil pipe CP extends. As the coil pipe shield S moves, the opening rate of the opening H of the coil pipe shield S can be adjusted.

[0076] The controller 400 can be configured to control the overall operation of the sputtering apparatus 1000. The controller 400 can be implemented as a central processing unit (CPU) or a device similar to the central processing unit (CPU) corresponding to hardware, software, or a combination thereof. In a hardware manner, the controller 400 can be provided in the form of an electronic circuit that performs a control function by processing an electrical signal. In a software manner, the controller 400 can be formed in the form of a program, an application, firmware, etc. that is processed as a hardware controller.

[0077] The controller 400 can determine the movement of the coil shield S and the moving member MP. In an embodiment, for example, the controller 400 can control the movement of each of the coil shield S and the moving member MP.

[0078] The controller 400 can control the coil shield S to move in a direction in which a plane in which the coil CP is disposed extends. The controller 400 can control the moving member MP to move in a direction (e.g., the first direction DR1) perpendicular to the plane in which the coil CP is disposed.

[0079] In the sputtering apparatus 1000 according to an embodiment of the disclosure, the movement of the coil shield S and the moving member MP can be controlled, and the amount of adsorption of water (H2O) in the chamber CB can be adjusted (or controlled) based on the movement of the coil shield S and the moving member MP. Accordingly, in a process of adsorbing water (H2O), the chamber CB can not be manually opened to manually remove water (H2O), and process convenience can be improved.

[0080] Figure 3 A schematic cross-sectional view of a sputtering apparatus according to another embodiment of the disclosure is illustrated. Hereinafter, a sputtering apparatus 1000 according to another embodiment of the disclosure will be described. Except that the sputtering apparatus 1000 does not include the moving member MP, Figure 3 The embodiment of the sputtering apparatus 1000 illustrated in Figure 2 is substantially the same as the embodiment illustrated in

[0081] In some embodiments, the coil CP can be fixed at one position (e.g., a predetermined position) in the chamber CB. In an embodiment, for example, the coil CP can be fixed on one surface in the chamber CB. The coil CP can be disposed on one surface in the chamber CB. The one surface in the chamber CB on which the coil CP is disposed can be a surface that supports the back plate BP and the coil CP.

[0082] The controller 400 can determine whether the coil shield S is to move. In an embodiment, for example, the controller 400 can control the movement of the coil shield S. The controller 400 can control the coil shield S to move in a direction in which a plane in which the coil CP is disposed extends.

[0083] The sputtering apparatus 1000 according to an embodiment of the disclosure can include the coil shield S including the opening H and being movable, and adjust the amount of adsorption of water (H2O) in the chamber CB. Accordingly, in a process of adsorbing water (H2O), the chamber CB can not be manually opened to manually remove water (H2O), and process convenience can be improved.

[0084] Hereinafter, a sputtering apparatus according to another embodiment of the disclosure will be described with reference toFigure 4 and Figure 5 The structure and arrangement of the coil pipe CP are described.

[0085] Figure 4 and Figure 5 A plan view schematically illustrating the shape of a coil pipe according to an embodiment of the disclosure is described. Figure 4 The shape of a coil pipe according to an embodiment of the disclosure can be illustrated, and Figure 5 The shape of a coil pipe according to another embodiment of the disclosure can be illustrated. For ease of illustration and description, only the chamber CB, the coil pipe shield S, and the coil pipe CP are illustrated in Figure 4 and Figure 5 in order to more clearly illustrate the structure of the coil pipe CP, and components other than the coil pipe CP are illustrated in dotted lines.

[0086] The coil pipe CP can be repeatedly bent in a zigzag form to have a shape in which the coil pipe CP is disposed in a plurality of columns. The coil pipe CP can include a plurality of bent portions. In an embodiment, for example, at least a portion of the coil pipe CP can have an "L" shape. However, the disclosure is not necessarily limited thereto.

[0087] Referring to Figure 4 , in an embodiment, at least a portion of the coil pipe CP can be disposed in the chamber CB, and at least another portion of the coil pipe CP can be disposed outside the chamber CB. In an embodiment, for example, the coil pipe CP can include a first portion P1, a second portion P2, and a third portion P3.

[0088] The first portion P1 can extend in the second direction DR2, and at least a portion of each of the first portions P1 can be disposed outside the chamber CB. At least a portion of each of the first portions P1 can be disposed inside the chamber CB. The first portions P1 can be disposed throughout the inside / outside of the chamber CB. At least a portion of the portion of each of the first portions P1 disposed inside the chamber CB can overlap the coil pipe shield S.

[0089] The first portions P1 can be disposed to be spaced apart from each other in the third direction DR3. The first portions P1 can include an inlet into which a refrigerant is introduced (or flows) and an outlet from which the refrigerant is discharged. In an embodiment, for example, the portions of the first portions P1 disposed outside the chamber CB can respectively correspond to the inlet into which the refrigerant is introduced and the outlet from which the refrigerant is discharged.

[0090] Each of the first portions P1 can be a flexible tube that is bendable, foldable, or the like. The first portions P1 can include an elastic material or a flexible material. The first portions P1 can include at least one selected from a rubber-based elastomer, a silicone-based elastomer, a urethane-based elastomer, an ester-based elastomer, and a urethane acrylate-based elastomer. However, the disclosure is not limited thereto, and the first portions P1 can include various flexible materials known in the art.

[0091] When the position of the coil pipe CP is changed, since the first portions P1 include an elastic material or a flexible material, the coil pipe CP can be moved without damaging the coil pipe CP. In an embodiment, for example, when the moving member MP is moved in the third direction DR3, since the first portions P1 of the coil pipe CP include an elastic material or a flexible material, the first portions P1 of the coil pipe CP can be stretched in the third direction DR3. Accordingly, the coil pipe CP can not be damaged.

[0092] The second portions P2 can extend in the second direction DR2, and at least a portion of the second portions P2 can be connected to the first portions P1. The second portions P2 can be disposed to be spaced apart from each other in the third direction DR3. The second portions P2 can be disposed inside the chamber CB.

[0093] The second portions P2 can include a material different from that of the first portions P1. In an embodiment, for example, the second portions P2 can include at least one selected from copper (Cu), brass, and aluminum (Al).

[0094] The third portions P3 can extend in the third direction DR3 and be connected to the second portions P2. In an embodiment, for example, the third portions P3 can extend in the third direction DR3 from one end of the second portions P2 to connect two second portions P2 spaced apart from each other. The third portions P3 can be disposed to be spaced apart from each other in the second direction DR2. The third portions P3 can be disposed inside the chamber CB.

[0095] The length of each of the third portions P3 can be shorter than the length of each of the second portions P2. However, the disclosure is not limited thereto.

[0096] The third portions P3 can include a material different from that of the first portions P1. The third portions P3 can include the same material as that of the second portions P2. In an embodiment, for example, the second portions P2 can include at least one selected from copper (Cu), brass, and aluminum (Al).

[0097] Reference Figure 5In another embodiment, the first portions P1 may extend along the third direction DR3. The first portions P1 may extend in the third direction DR3, and at least a portion of each of the first portions P1 may be a portion of the coil CP disposed outside the chamber CB. The first portions P1 may be spaced apart from each other along the second direction DR2.

[0098] The second portion P2 may extend in the third direction DR3, and at least a portion of the second portion P2 may be connected to the first portion P1. The second portions P2 may be disposed to be spaced apart from each other in the second direction DR2. The second portions P2 may be disposed inside the chamber CB.

[0099] The third portion P3 may extend in the second direction DR2 and connect to the second portion P2. In one embodiment, for example, the third portion P3 may extend from one end of the second portion P2 in the second direction DR2 to connect two second portions P2 that are spaced apart from each other. The third portions P3 may be spaced apart from each other in the third direction DR3. The third portion P3 may be disposed within the chamber CB.

[0100] The length of each of the third portions P3 may be shorter than the length of each of the second portions P2. However, the present disclosure is not limited thereto.

[0101] In the following, reference will be made to Figure 6 to Figure 8 The structure of the coil shield S and the principle of adjusting the opening ratio of the opening H of the coil shield S according to an embodiment of the present disclosure are described.

[0102] Figure 6 is a schematic plan view of a coil shield according to an embodiment of the present disclosure. Figure 7 and Figure 8 Schematic cross-sectional views of coil shields with different opening ratios. Figure 7 and Figure 8 Can be along Figure 6 sectional view taken along line AA' shown in FIG. Figure 7 Schematic cross-sectional view of the coil shield S when the opening ratio is 100%. Figure 8 : A schematic cross-sectional view of the coil shield S when the opening ratio is 0%.

[0103] refer to Figure 7 and Figure 8 In one embodiment, the coil shield S may include a first coil shield S1 and a second coil shield S2. The second coil shield S2 may be disposed on the first coil shield S1. The first coil shield S1 and the second coil shield S2 may be disposed in contact with each other. In one embodiment, for example, the first coil shield S1 and the second coil shield S2 may be disposed so as to overlap each other in a plan view of the coil shield S.

[0104] The first coil shield S1 and the second coil shield S2 can have the same shape as each other. Each of the first coil shield S1 and the second coil shield S2 can have a rectangular planar shape having a long side in the second direction DR2 and a short side in a third direction DR3 intersecting the second direction DR2. However, the disclosure is not limited thereto. The first coil shield S1 and the second coil shield S2 can have different shapes, and each of the first coil shield S1 and the second coil shield S2 can include a planar shape such as a polygon including a quadrilateral, a circle, or an ellipse.

[0105] A cross section (hereinafter referred to as a section) of each of the first coil shield S1 and the second coil shield S2 viewed in the third direction DR3 can have a quadrilateral shape. In an embodiment, for example, the section of each of the first coil shield S1 and the second coil shield S2 can have a form in which a quadrilateral is provided with openings H1, H2 therebetween.

[0106] The section of each of the first coil shield S1 and the second coil shield S2 can have a quadrilateral shape, and with reference to Figure 2 , the coil shield S can expose a side surface of the coil CP. In some embodiments, when the side surface of the coil CP is exposed, a larger amount of water (H2O) can be adsorbed to the side surface of the coil CP, and the amount of adsorption of water (H2O) can be adjusted based on whether the side surface of the coil CP is exposed.

[0107] The first coil shield S1 can be provided with first openings H1. The first openings H1 can be provided as a plurality. The first openings H1 can be provided to be spaced apart from each other along the second direction DR2 and the third direction DR3. At least some of the first openings H1 can be provided to overlap the coil CP when viewed on a plane in which the coil CP is provided.

[0108] The first openings H1 can have a quadrilateral shape. However, the disclosure is not limited thereto, and the first openings H1 can have a planar (or sectional) shape such as a polygon, a circle, or an ellipse.

[0109] The second coil shield S2 can be provided with second openings H2. The second openings H2 can be provided as a plurality. The second openings H2 can be provided to be spaced apart from each other along the second direction DR2 and the third direction DR3. At least some of the second openings H2 can be provided to overlap the coil CP when viewed on a plane in which the coil CP is provided.

[0110] The second opening H2 may have the same shape as the first opening H1. In one embodiment, for example, the second opening H2 may have a quadrilateral shape. However, the present disclosure is not limited thereto, and the second opening H2 may have a shape different from that of the first opening H1. The second opening H2 may have a planar (or cross-sectional) shape such as a polygon, a circle, or an ellipse.

[0111] The first coil shield S1 and the second coil shield S2 can be arranged to slidably contact each other. In one embodiment, for example, the first coil shield S1 can be stopped, and the second coil shield S2 can slide relative to the first coil shield S1. In one embodiment, for example, the second coil shield S2 can be stopped, and the first coil shield S1 can slide relative to the second coil shield S2. In one embodiment, for example, both the first coil shield S1 and the second coil shield S2 can slide relative to each other.

[0112] The first coil shield S1 and the second coil shield S2 can slide relative to each other to adjust the opening ratio of the opening H. The first coil shield S1 and the second coil shield S2 can slide relative to each other to adjust the overlapping ratio between the first opening H1 and the second opening H2 (hereinafter referred to as the opening ratio of the opening H).

[0113] The first coil shield S1 and the second coil shield S2 can be arranged in a first sliding state. The first sliding state can be defined as a case where the opening ratio of the opening H is 100%. When the opening ratio of the opening H is 100%, the first coil shield S1 and the second coil shield S2 can be arranged to completely overlap each other in a plan view. The first opening H1 and the second opening H2 can be arranged to completely overlap each other in a plan view.

[0114] refer to Figure 8 In some embodiments, the second coil shield S2 or the first coil shield S1 may slide in the second direction DR2 so that at least a portion of the first coil shield S1 is disposed not to overlap with at least a portion of the second coil shield S2 in a plan view.

[0115] The first coil shield S1 and the second coil shield S2 can be placed in a second sliding state. The second sliding state can be defined as a case where the opening ratio of the opening H is 0%. When the opening ratio of the opening H is 0%, at least a portion of the first coil shield S1 may not overlap with at least a portion of the second coil shield S2 in a plan view. The first opening H1 and the second opening H2 may not completely overlap with each other in a plan view.

[0116] In one embodiment, if Figure 7 and Figure 8, the first coil shield S1 and the second coil shield S2 can slide in the second direction DR2. However, the present disclosure is not limited thereto. In some embodiments, the first coil shield S1 and the second coil shield S2 can slide in the third direction DR3.

[0117] As the first coil shield S1 and the second coil shield S2 move, the opening ratio of the openings H may be adjusted, and the amount of water (H2O) moving between the openings H may be determined. Accordingly, the sputtering apparatus 1000 according to an embodiment of the present disclosure may adjust the amount of water (H2O) adsorbed to the coils CP.

[0118] In the following, reference will be made to Figure 9 The shape of the coil shield S according to another embodiment of the present disclosure is described. Figure 9 FIG. 1 is a schematic cross-sectional view of a coil shield according to another embodiment of the present disclosure. In addition to the coil shield S including the protrusion PRU, Figure 9 The embodiment of the coil shield S shown in FIG. Figure 8 The embodiments shown in are essentially the same.

[0119] Figure 9 The coil shield S shown in FIG. 1 may be each of the first coil shield S1 and the second coil shield S2, and Figure 9 The opening H shown in FIG. 5 may be each of the first opening H1 and the second opening H2 .

[0120] refer to Figure 9 The coil shield S may include a protrusion PRU. The coil shield S may include a protrusion PRU extending in a lower direction (for example, a direction opposite to the first direction DR1) at each of one end portion (first end portion) and the other end portion (second end portion) parallel to the one end portion.

[0121] The coil shield S may include a protrusion PRU, and the coil shield S may appropriately protect the side surface of the coil CP. In one embodiment, for example, the protrusion PRU may be provided to overlap with atoms of the side surface of the target T facing the coil CP, thereby reducing the amount of target T deposited on the side surface of the coil CP.

[0122] In some embodiments, the protrusion PRU of the coil shield S may overlap at least a portion of the side surface of the coil CP when viewed in the second direction DR2 or the third direction DR3. However, the present disclosure is not limited thereto, and the protrusion PRU of the coil shield S may not overlap at least a portion of the side surface of the coil CP when viewed in the second direction DR2 or the third direction DR3.

[0123] According to an embodiment of the present disclosure, a sputtering apparatus may control the amount of a material for determining a thin film quality when a pressure condition close to a vacuum is formed in a chamber of the sputtering apparatus.

[0124] The present disclosure should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the present disclosure to those skilled in the art.

[0125] While the disclosure has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit or scope of the disclosure as defined by the claims.

Claims

1. A sputtering device, characterized in that: The sputtering equipment includes: room; a target disposed inside the chamber; a coil disposed adjacent to the target; a moving member on which the coil is disposed, wherein the moving member is configured to adjust a position of the coil; and a coil shield disposed within the chamber to overlap at least a portion of the coil, wherein an opening is defined in the coil shield.

2. The sputtering device according to claim 1, wherein The sputtering device further comprises: a substrate disposed inside the chamber, wherein the target comprises a material to be deposited on the substrate, wherein one surface of the substrate faces a plane on which the coil is disposed, wherein the coil is disposed between the base plate and the moving member, and The coil is movable in a first direction, which is a direction perpendicular to the plane on which the coil is arranged.

3. The sputtering device according to claim 1, characterized in that The moving member is a table configured to adjust the height at which the coil is arranged.

4. The sputtering device according to claim 1, wherein The moving member includes a screw or a cylinder.

5. The sputtering device according to claim 2, characterized in that The coil shield is disposed between the base plate and the coil.

6. The sputtering device according to claim 1, wherein The coil shield includes a first coil shield and a second coil shield disposed on the first coil shield, and The first coil shield and the second coil shield are in slidable contact with each other.

7. The sputtering device according to claim 6, characterized in that A first opening is defined in the first coil shield, and A second opening is defined in the second coil shield, and Each of the first opening and the second opening has a polygonal, circular or elliptical planar shape.

8. The sputtering device according to claim 7, characterized in that The first coil shield and the second coil shield are arranged in a first sliding state or a second sliding state, wherein in the first sliding state, the first opening and the second opening completely overlap each other, and In the second sliding state, the first opening and the second opening do not overlap with each other.

9. The sputtering device according to claim 1, wherein: The coil comprises a first portion comprising an elastic or flexible material, and At least a portion of the first portion corresponds to an inlet through which refrigerant flows.

10. A sputtering device, characterized in that: The sputtering equipment includes: room; a target disposed inside the chamber; a coil disposed adjacent to the target; and a coil shield disposed inside the chamber to overlap the coil, wherein the coil shielding member comprises a first coil shielding member and a second coil shielding member disposed on the first coil shielding member, and The first coil shield and the second coil shield are in slidable contact with each other.

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