Pressure sensing chip
By designing the conductive layer as a single piece and directly connecting it to the semiconductor substrate, the problem of difficult conductive layer molding was solved, improving high-temperature stability and detection accuracy, and simplifying the structure of the pressure sensing chip.
Patent Information
- Application Number
- CN202421886903.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-06
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-08-06
AI Technical Summary
In existing pressure sensing chips, the formation of the conductive layer is quite difficult, leading to increased structural complexity.
The conductive layer is designed as a single piece. Both the first and second sensitive resistors are located within the projection of the conductive layer and are directly connected to the semiconductor substrate. Charge stabilization is achieved through the voltage stability between the conductive layer and the semiconductor substrate, simplifying the structure.
It improves operational stability and detection accuracy at high temperatures, reduces the difficulty of forming the conductive layer, and simplifies the chip structure.
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Figure CN223461128U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the chip technical field, in particular to a pressure sensing chip. BACKGROUND
[0002] The pressure sensing chip is a core component for measuring pressure.
[0003] In the related art, the chip comprises a first insulating layer, a substrate, two electric connection parts, a first sensitive resistor and a second sensitive resistor, the first sensitive resistor and the second sensitive resistor are connected with the substrate, the first insulating layer is arranged on the first sensitive resistor and the second sensitive resistor, the substrate has a cavity, the chip comprises a first conductive layer and a second conductive layer, the first conductive layer corresponds to the first sensitive resistor, the first conductive layer and the second conductive layer are separately arranged, one end of one of the electric connection parts is electrically connected with the first conductive layer and the other end is electrically connected with the substrate, the second conductive layer corresponds to the second sensitive resistor, one end of the other electric connection part is electrically connected with the second conductive layer and the other end is electrically connected with the substrate, the chip in the related art is provided with the first conductive layer and the second conductive layer which are separately arranged, and it is difficult to form the chip. CONTENT OF THE UTILITY MODEL
[0004] The application aims to provide a pressure sensing chip, which comprises a first semiconductor substrate, a first sensitive resistor, a conductive layer and a second sensitive resistor, the pressure sensing chip has a cavity, and the pressure sensing chip has a thickness direction, along the thickness direction, the first sensitive resistor is located on one side of the cavity.
[0005] The pressure sensing chip comprises a first conductive part, one end of the first conductive part is electrically connected with the conductive layer, and the other end of the first conductive part is electrically connected with the first semiconductor substrate, along the thickness direction, the first sensitive resistor and the second sensitive resistor are located on the same side of the first semiconductor substrate, the first sensitive resistor and the second sensitive resistor are directly connected with the first semiconductor substrate, a projection plane is defined, the projection plane is perpendicular to the thickness direction, the first sensitive resistor and the second sensitive resistor are located in the orthographic projection of the conductive layer on the projection plane, and the conductive layer is an integral piece.
[0006] In the application, one end of the first conductive part is electrically connected with the conductive layer, the other end of the first conductive part is electrically connected with the first semiconductor substrate, the first sensitive resistor and the second sensitive resistor are located in the orthographic projection of the conductive layer on the projection plane, and the conductive layer is an integral piece, so that the difficulty degree of forming the conductive layer is reduced. BRIEF DESCRIPTION OF DRAWINGS
[0007] Figure 1 It is a sectional view of the pressure sensing chip.
[0008] Figure 2is Figure 1 A schematic view of the second insulating layer, the third semiconductor substrate and the glass substrate hidden in the middle.
[0009] Figure 3 is Figure 2 A schematic view of the first semiconductor substrate, the second semiconductor substrate, the second conductive part in the middle.
[0010] Figure 4 is a sectional view of another pressure sensing chip of the present application.
[0011] Figure 5 is Figure 2 A schematic view of the first lead-out part, the second lead-out part, the first conductive part and the second conductive part hidden in the middle.
[0012] Figure 6 is a schematic view of the first sensitive resistor, the second sensitive resistor, the first sub-conductive layer part and the second sub-conductive layer part on the projection plane. DETAILED DESCRIPTION
[0013] The exemplary embodiments of the present application will be described in detail below with reference to the accompanying drawings. The features in the following embodiments and implementation examples can be combined with each other without conflict.
[0014] As Figures 1 to 6 shown is a pressure sensing chip according to the present application, referring to Figure 1 and Figure 2 , the pressure sensing chip comprises a first semiconductor substrate 1, a first sensitive resistor 11, a conductive layer 12 and a second sensitive resistor 13, the first sensitive resistor 11, the conductive layer 12 and the second sensitive resistor 13 are all connected with the first semiconductor substrate 1, the pressure sensing chip has a thickness direction Z, along the thickness direction Z, the first sensitive resistor 11, the conductive layer 12 and the second sensitive resistor 13 are all located on the same side of the first semiconductor substrate 1, the first sensitive resistor 11 and the second sensitive resistor 13 are closer to the first semiconductor substrate 1 relative to the conductive layer 12;
[0015] The pressure sensing chip comprises a first conductive part 5, one end of the first conductive part 5 is electrically connected with the conductive layer 12, the other end of the first conductive part 5 is electrically connected with the first semiconductor substrate 1; the first sensitive resistor 11 and the second sensitive resistor 13 are both directly connected with the first semiconductor substrate 1;
[0016] A projection plane S is defined, the projection plane S is perpendicular to the thickness direction Z, the orthographic projection of the first sensitive resistor 11 on the projection plane S and the orthographic projection of the second sensitive resistor 13 on the projection plane S are both located within the orthographic projection of the conductive layer 12 on the projection plane S, the conductive layer 12 is a one-piece part. Specifically, the conductive layer 12 can be formed at one time, such as by one-time coating forming or one-time deposition forming.
[0017] In some embodiments, referring to Figure 1 and Figure 2 , the pressure sensing chip comprises a first semiconductor substrate 1, a first sensitive resistor 11, a conductive layer 12, a second sensitive resistor 13 and a first insulating layer 4, the pressure sensing chip has a cavity 31, the pressure sensing chip has a thickness direction Z, along the thickness direction Z, the first sensitive resistor 11 is located on one side of the cavity 31, the first insulating layer 4 is located between the first sensitive resistor 11 and the conductive layer 12, the first insulating layer 4 is located between the second sensitive resistor 13 and the conductive layer 12, the conductive layer 12 is connected with the first insulating layer 4, and the first sensitive resistor 11 and the second sensitive resistor 13 are both connected with the first insulating layer 4; the pressure sensing chip comprises a first conductive part 5, one end of the first conductive part 5 is connected with the conductive layer 12, and the other end of the first conductive part 5 is connected with the first semiconductor substrate 1, and the conductive layer 12 is used to connect the voltage.
[0018] Referring to Figure 1 and Figure 2 , along the thickness direction Z, the first sensitive resistor 11 and the second sensitive resistor 13 are both located on one side of the first semiconductor substrate 1, the first sensitive resistor 11 and the second sensitive resistor 13 are both in contact with the first semiconductor substrate 1, and the first sensitive resistor 11 and the second sensitive resistor 13 are both connected with the first semiconductor substrate 1; the conductive layer 12 comprises a first sub-conductive layer part 121 and a second sub-conductive layer part 122, a projection plane S is defined, the projection plane S is perpendicular to the thickness direction Z, the orthographic projection of the first sensitive resistor 11 on the projection plane S is at least partially located within the orthographic projection of the first sub-conductive layer part 121 on the projection plane S, and the orthographic projection of the second sensitive resistor 13 on the projection plane S is at least partially located within the orthographic projection of the second sub-conductive layer part 122 on the projection plane S, and the first sub-conductive layer part 121 and the second sub-conductive layer part 122 are an integral piece.
[0019] By passing the high voltage through the first conductive part 5, the voltage of the conductive layer 12 is the same as the voltage of any part in the first semiconductor substrate 1, the charge stability between the conductive layer 12 and any part in the first semiconductor substrate 1 is achieved, the current leakage of the first sensitive resistor 11 and the second sensitive resistor 13 to the first semiconductor substrate 1 at high temperature is reduced, and the stability of the work at high temperature is improved; and because of the charge stability between the conductive layer 12 and any part in the first semiconductor substrate 1, the influence of the external electromagnetic on the first sensitive resistor 11 and the second sensitive resistor 13 is reduced, and the accuracy of detection is improved. And by making the conductive layer an integral piece, the number of first conductive parts is reduced, and the structure of the pressure sensing chip is simplified.
[0020] Specifically, the conductive layer 12 is in contact with the first insulating layer 4, and the conductive layer 12 is connected with the first insulating layer 4, along the thickness direction Z, the first insulating layer 4 is closer to the first semiconductor substrate 1 than the conductive layer 12.
[0021] Further, referring to Figure 1 and Figure 6 , the orthographic projection of the first sensitive resistor 11 on the projection plane S is a first projection S1, the orthographic projection of the second sensitive resistor 13 on the projection plane S is a second projection S2, the orthographic projection of the first sub-conductive layer part 121 on the projection plane S is a third projection S3, and the orthographic projection of the second sub-conductive layer part 122 on the projection plane S is a fourth projection S4. The first projection S1 is at least partially located within the third projection S3, the second projection S2 is at least partially located within the fourth projection S4, and the third projection S3 contacts and connects with the fourth projection S4.
[0022] In some embodiments, referring to Figure 1 and Figure 2 , the conductive layer 12, the first insulating layer 4, the first sensitive resistor 11, and the first semiconductor substrate 1 are sequentially distributed along the thickness direction Z, the conductive layer 12 contacts and connects with the first insulating layer 4, specifically, the conductive layer 12 is bonded to the first insulating layer 4; the first sensitive resistor 11 and the second sensitive resistor 13 both contact and connect with the first insulating layer 4, specifically, the first sensitive resistor 11 and the second sensitive resistor 13 are both bonded to the first insulating layer 4, the first sensitive resistor 11 and the second sensitive resistor 13 are both located between the first insulating layer 4 and the first semiconductor substrate 1, the first sensitive resistor 11 and the second sensitive resistor 13 both contact and connect with the first semiconductor substrate 1.
[0023] In some embodiments, a transverse direction X is defined, which is perpendicular to the thickness direction Z, along the transverse direction X, the conductive layer 12 is at least partially located between the first sensitive resistor 11 and the second sensitive resistor 13.
[0024] In some embodiments, referring to Figure 1 and Figure 2 , the first semiconductor substrate 1, the first sensitive resistor 11, and the second sensitive resistor 13 are an integral piece, specifically, the first semiconductor substrate 1 is N-type silicon, and a light doping of a pentavalent element, such as phosphorus or arsenic, is performed in the single crystal silicon. The first sensitive resistor 11 and the second sensitive resistor 13 are both P-type silicon, and a light doping of a trivalent element, such as boron or gallium, is performed in the single crystal silicon. Further, the single crystal silicon corresponding to the first sensitive resistor 11 and the second sensitive resistor 13 is an integral piece with the single crystal silicon corresponding to the first semiconductor substrate 1.
[0025] In some embodiments, referring to Figure 2 and Figure 3The pressure sensing chip has a second conductive part 51, along the thickness direction Z, the second conductive part 51 is located between the first insulating layer 4 and the first semiconductor substrate 1, the second conductive part 51 is in contact with the first semiconductor substrate 1, and the second conductive part 51 is connected with the first semiconductor substrate 1, the second conductive part 51 is in contact with the first conductive part 5, and the second conductive part 51 is in contact with the first conductive part 5. Specifically, the second conductive part 51 is in contact with the first insulating layer 4, and the second conductive part 51 is connected with the first insulating layer 4, further, the second conductive part 51 is bonded to the first insulating layer 4.
[0026] In some embodiments, referring to Figure 2 and Figure 3 The pressure sensing chip includes a second semiconductor substrate 2, along the thickness direction Z, the second semiconductor substrate 2 is located between the first insulating layer 4 and the first semiconductor substrate 1, along the lateral direction X, the second semiconductor substrate 2 is partially located between the first sensitive resistor 11 and the second conductive part 51, and the second semiconductor substrate 2 is partially located between the second sensitive resistor 13 and the second conductive part 51, the first semiconductor substrate 1 is in contact with the second semiconductor substrate 2, and the first semiconductor substrate 1 is connected with the second semiconductor substrate 2. Further, the second conductive part 51 is N-type silicon, and the second conductive part 51 is heavily doped with a pentavalent element such as phosphorus or arsenic in single crystal silicon. Specifically, the second conductive part 51 is an integral part of the first semiconductor substrate 1, and further, the corresponding single crystal silicon of the second conductive part 51 and the corresponding single crystal silicon of the first semiconductor substrate 1 are an integral part.
[0027] By providing the second conductive part 51, the first conductive part 5 can be more easily attached to the first semiconductor substrate 1, and the voltage of the first conductive part 5 can be better transmitted to the first semiconductor substrate 1.
[0028] In some embodiments, referring to Figure 4 The first conductive part 5 is in contact with and connected to the second semiconductor substrate 2.
[0029] In some embodiments, a lateral direction X is defined, which is perpendicular to the thickness direction Z, along the lateral direction X, the second conductive part 51 is located between the first sensitive resistor 11 and the second sensitive resistor 13. Along the thickness direction Z, the second conductive part 51 is located on one side of the cavity 31, and the first sensitive resistor 11, the second sensitive resistor 13 and the second conductive part 51 are all located on the same side of the cavity 31. By such arrangement, the compactness of the second conductive part 51, the first sensitive resistor 11 and the second sensitive resistor 13 can be improved.
[0030] In some embodiments, referring to Figure 2 and Figure 3, the pressure sensing chip comprises a second semiconductor substrate 2, the second semiconductor substrate 2 comprises a first sub-semiconductor part 21, a second sub-semiconductor part 22, a third sub-semiconductor part 23 and a fourth sub-semiconductor part 24, along the transverse direction X, the second sub-semiconductor part 22 and the third sub-semiconductor part 23 are both located between the first sensitive resistor 11 and the second sensitive resistor 13, the first sensitive resistor 11 is located between the first sub-semiconductor part 21 and the second sub-semiconductor part 22, and the second sensitive resistor 13 is located between the third sub-semiconductor part 23 and the fourth sub-semiconductor part 24. The first sub-semiconductor part 21, the second sub-semiconductor part 22, the third sub-semiconductor part 23 and the fourth sub-semiconductor part 24 are all located between the first insulating layer 4 and the first semiconductor substrate 1, and the first sub-semiconductor part 21, the second sub-semiconductor part 22, the third sub-semiconductor part 23 and the fourth sub-semiconductor part 24 are all in contact with and connected to the first semiconductor substrate 1. Specifically, the first sub-semiconductor part 21, the second sub-semiconductor part 22, the third sub-semiconductor part 23, the fourth sub-semiconductor part 24 and the first semiconductor substrate 1 are an integral piece, the first semiconductor substrate 1 and the second semiconductor substrate 2 are an integral piece, the second semiconductor substrate 2 is N-type silicon, and the second semiconductor substrate 2 is lightly doped with a pentavalent element such as phosphorus or arsenic in a single crystal silicon.
[0031] Specifically, referring to Figure 2 and Figure 3 , the second sub-semiconductor part 22 is located between the first sensitive resistor 11 and the second conductive part 51, the second sub-semiconductor part 22 is in contact with and connected to the first sensitive resistor 11, and the second sub-semiconductor part 22 is in contact with and connected to the second conductive part 51; the third sub-semiconductor part 23 is located between the second sensitive resistor 13 and the second conductive part 51, the third sub-semiconductor part 23 is in contact with and connected to the second sensitive resistor 13, and the third sub-semiconductor part 23 is in contact with and connected to the second conductive part 51; the first sub-semiconductor part 21 is connected to the first sensitive resistor 11, and the fourth sub-semiconductor part 24 is connected to the second sensitive resistor 13.
[0032] In some embodiments, referring to Figure 4 , the pressure sensing chip comprises a second semiconductor substrate 2, along the thickness direction Z, the second semiconductor substrate 2 is located between the first insulating layer 4 and the first semiconductor substrate 1, along the transverse direction X, the second semiconductor substrate 2 is partially located between the first sensitive resistor 11 and the second sensitive resistor 13, the first semiconductor substrate 1 is in contact with the second semiconductor substrate 2, and the first semiconductor substrate 1 is connected to the second semiconductor substrate 2.
[0033] In some embodiments, referring to Figure 2The pressure sensing chip comprises a third conductive part 52, the third conductive part 52 is at least partially located outside the pressure sensing chip, the third conductive part 52 is in contact with the conductive layer 12, and the third conductive part 52 is connected with the conductive layer 12. Specifically, along the thickness direction Z, the third conductive part 52 is arranged on the conductive layer 12, the conductive layer 12 is located between the third conductive part 52 and the first insulating layer 4, the third conductive part 52, the first conductive part 5 and the second conductive part 51 are distributed along the thickness direction Z, the first conductive part 5 is in contact with and connected with the second conductive part 51, and the third conductive part 52 is in contact with and connected with the second conductive part 51. Through the arrangement of the third conductive part 52 exposed outside the pressure sensing chip, the high potential can be conveniently connected to the third conductive part 52.
[0034] In some embodiments, referring to Figure 2 and Figure 5 , the first insulating layer 4 has a first through hole 43, the first through hole 43 penetrates the first insulating layer 4 along the thickness direction Z, part of the first conductive part 5 is located in the first through hole 43, the conductive layer 12 has a second through hole 123, the second through hole 123 penetrates the conductive layer 12 along the thickness direction Z, another part of the first conductive part 5 is located in the second through hole 123, the third conductive part 52 is in contact with and connected with the first conductive part 5. Specifically, the third conductive part 52 and the first conductive part 5 are an integral part.
[0035] In some embodiments, referring to Figure 2 and Figure 5 , the first insulating layer 4 comprises a first sub-insulating layer 41 and a second sub-insulating layer 42, along the thickness direction Z, the first sub-insulating layer 41 is located on one side of the second sub-insulating layer 42, both the first sub-insulating layer 41 and the second sub-insulating layer 42 are located on the same side of the first sensitive resistor 11, and along the thickness direction Z, the second sub-insulating layer 42 is closer to the first sensitive resistor 11 than the first sub-insulating layer 41. Specifically, the second sub-insulating layer 42 is in contact with and connected with the first sensitive resistor 11 and the second sensitive resistor 13, the second sub-insulating layer 42 is in contact with and connected with the second conductive part 51, the first sub-insulating layer 41 is in contact with and connected with the second sub-insulating layer 42, and the conductive layer 12 is in contact with and connected with the second sub-insulating layer 42. Further, the first through hole 43 penetrates the first sub-insulating layer 41 and the second sub-insulating layer 42 along the thickness direction Z.
[0036] In some embodiments, referring to Figure 2 and Figure 5 , the first sub-insulating layer 41 is silicon nitride, and the second sub-insulating layer 42 is silicon dioxide. Silicon nitride plays a role of blocking impurity diffusion in the pressure sensing chip, and can prevent boron, phosphorus and other dopants from changing device characteristics by diffusion. In addition, silicon nitride can also prevent the diffusion of metal ions and the like to reduce short circuit and other failures.
[0037] Due to the thinness of the second sub-insulating layer 42, the second sub-insulating layer 42 is curved under the action of the internal stress in the second sub-insulating layer 42. The first sub-insulating layer 41 of silicon nitride is used to connect the first sub-insulating layer 41 and the second sub-insulating layer 42, and the bending direction of the first sub-insulating layer 41 is opposite to the bending direction of the second sub-insulating layer 42, so that the first sub-insulating layer 41 and the second sub-insulating layer 42 are relatively flat and resist the internal stress of the second sub-insulating layer 42.
[0038] In some embodiments, referring to Figure 1 and Figure 3 , the pressure sensing chip comprises a first conductive resistor 111, which is located between the first semiconductor substrate 1 and the first insulating layer 4 along the thickness direction Z, contacts the first semiconductor substrate 1, and is connected with the first sensitive resistor 11. Specifically, the first conductive resistor 111 is located between the second sub-insulating layer 42 and the first semiconductor substrate 1, contacts and is connected with the first insulating layer 4, contacts and is connected with the second sub-insulating layer 42, contacts and is connected with the first semiconductor substrate 1, and contacts and is connected with the first sensitive resistor 11.
[0039] Further, referring to Figure 1 and Figure 3 , along the transverse direction X, the first conductive resistor 111 is located between the first sub-semiconductor part 21 and the first sensitive resistor 11, and the first sub-semiconductor part 21 contacts and is connected with the first conductive resistor 111. The first conductive resistor 111 is P-type silicon, which is formed by heavily doping a trivalent element such as boron or gallium in single crystal silicon. The single crystal silicon corresponding to the first conductive resistor 111 and the single crystal silicon corresponding to the first sensitive resistor 11 are one piece.
[0040] In some embodiments, referring to Figure 2 and Figure 5 , the pressure sensing chip comprises a first lead-out part 112, which is closer to the first semiconductor substrate 1 than the first sensitive resistor 11 along the thickness direction Z, is connected with the first conductive resistor 111, and has a first connection end 113 which is at least partially located outside the pressure sensing chip. Specifically, the first lead-out part 112 contacts and is connected with the first conductive resistor 111, the first insulating layer 4 has a first lead-out hole 44 which penetrates the first insulating layer 4 along the thickness direction Z, and the first lead-out part 112 is at least partially located in the first lead-out hole 44. Further, the first lead-out hole 44 penetrates the first sub-insulating layer 41 and the second sub-insulating layer 42 along the thickness direction Z, and the first lead-out part 112 is metal.
[0041] In some embodiments, referring to Figure 1 and Figure 3 , the pressure sensing chip comprises a second conductive resistor 131, along the thickness direction Z, the second conductive resistor 131 is located between the first semiconductor substrate 1 and the first insulating layer 4, the second conductive resistor 131 is in contact with the first semiconductor substrate 1, and the second conductive resistor 131 is connected with the second sensitive resistor 13. Specifically, the second conductive resistor 131 is located between the second sub-insulating layer 42 and the first semiconductor substrate 1, the second conductive resistor 131 is in contact with and connected to the first insulating layer 4, the second conductive resistor 131 is in contact with and connected to the second sub-insulating layer 42, the second conductive resistor 131 is in contact with and connected to the first semiconductor substrate 1, and the second conductive resistor 131 is in contact with and connected to the second sensitive resistor 13.
[0042] Further, referring to Figure 1 and Figure 3 , along the transverse direction X, the second conductive resistor 131 is located between the fourth sub-semiconductor part 24 and the second sensitive resistor 13, and the fourth sub-semiconductor part 24 is in contact with and connected to the second conductive resistor 131. The second conductive resistor 131 is P-type silicon, and the second conductive resistor 131 is heavily doped with trivalent elements such as boron or gallium in single crystal silicon. The single crystal silicon corresponding to the second conductive resistor 131 and the single crystal silicon corresponding to the second sensitive resistor 13 are one piece.
[0043] In some embodiments, referring to Figure 2 and Figure 5 , the pressure sensing chip comprises a second lead-out part 132, along the thickness direction Z, the second sensitive resistor 13 is closer to the first semiconductor substrate 1 than the second lead-out part 132, the second lead-out part 132 is connected with the second conductive resistor 131, and the second lead-out part 132 has a second connection end 133, which is at least partially located outside the pressure sensing chip. Specifically, the second lead-out part 132 is in contact with and connected to the second conductive resistor 131, the first insulating layer 4 has a second lead-out hole 45, the second lead-out hole 45 penetrates the first insulating layer 4 along the thickness direction Z, and the second lead-out part 132 is at least partially located in the second lead-out hole 45. Further, the second lead-out hole 45 penetrates the first sub-insulating layer 41 and the second sub-insulating layer 42 along the thickness direction Z, and the second lead-out part 132 is metal.
[0044] In some embodiments, referring to Figure 1, the first conductive resistance 111, the first lead-out part 112, the first sensitive resistance 11 and the second sensitive resistance 13 are all located on the same side of the cavity 31 along the thickness direction Z, and the first sensitive resistance 11 is closer to the cavity 31 than the first lead-out part 112 along the thickness direction Z. Specifically, the second conductive resistance 131, the second lead-out part 132, the first sensitive resistance 11 and the second sensitive resistance 13 are all located on the same side of the cavity 31 along the thickness direction Z, and the second sensitive resistance 13 is closer to the cavity 31 than the second lead-out part 132 along the thickness direction Z.
[0045] In some embodiments, referring to Figure 1 , the pressure sensing chip comprises the second insulating layer 6, the glass substrate 61 and the third semiconductor substrate 3, the second insulating layer 6 is located between the first semiconductor substrate 1 and the third semiconductor substrate 3, the second insulating layer 6 is connected with the first semiconductor substrate 1, the third semiconductor substrate 3 is connected with the second insulating layer 6, the glass substrate 61 is located on the side of the third semiconductor substrate 3 away from the second insulating layer 6, and the glass substrate 61 is connected with the third semiconductor substrate 3, and the third semiconductor substrate 3 has the cavity 31. Specifically, the second insulating layer 6 is in contact with and connected with the first semiconductor substrate 1, the third semiconductor substrate 3 is in contact with and connected with the second insulating layer 6, the glass substrate 61 is in contact with and connected with the third semiconductor substrate 3, the third semiconductor substrate 3 has a part of the cavity 31, and the second insulating layer 6 has another part of the cavity 31.
[0046] In some embodiments, referring to Figure 1 , the pressure sensing chip comprises the glass substrate 61 and the third semiconductor substrate 3, the third semiconductor substrate 3 is located on the side of the first semiconductor substrate 1 away from the first insulating layer 4, the third semiconductor substrate 3 is in contact with and connected with the first semiconductor substrate 1, specifically, the first semiconductor substrate 1 and the third semiconductor substrate 3 are an integral piece, the third semiconductor substrate 3 has the cavity 31, the third semiconductor substrate 3 is located between the first semiconductor substrate 1 and the glass substrate 61, and the glass substrate 61 is in contact with and connected with the third semiconductor substrate 3.
[0047] In some embodiments, referring to Figure 1 and Figure 2 , the pressure sensing chip comprises the third conductive part 52, the third conductive part 52 is at least partially located outside the pressure sensing chip, the third conductive part 52 is connected with the conductive layer 12, and the third conductive part 52 and the first conductive part 5 are an integral piece; the cavity 31 is vacuum.
[0048] In some embodiments, referring to Figure 1 and Figure 2, the pressure sensing chip comprises a first lead-out portion 112, along the thickness direction Z, the first sensitive resistor 11 is closer to the first semiconductor substrate 1 relative to the first lead-out portion 112, and the first lead-out portion 112, the third conductive portion 52 and the first conductive portion 5 are of the same material. Specifically, the pressure sensing chip comprises a second lead-out portion 132, along the thickness direction Z, the second sensitive resistor 13 is closer to the first semiconductor substrate 1 relative to the second lead-out portion 132, and the first lead-out portion 112, the third conductive portion 52, the first conductive portion 5 and the second lead-out portion 132 are of the same material, facilitating one-time molding of the first lead-out portion 112, the third conductive portion 52, the first conductive portion 5 and the second lead-out portion 132 in the same process.
[0049] In some embodiments, referring to Figure 1 and Figure 2 , the first lead-out portion 112, the third conductive portion 52 and the second lead-out portion 132 are of the same material. Specifically, the conductive layer 12 is metal or doped polysilicon.
[0050] The above embodiments are only used to illustrate the present application and not to limit the technical solutions described in the present application. The understanding of the present application should be based on the skilled person in the art. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the skilled person in the art can still modify or equivalently replace some features of the present application, and all technical solutions and improvements which do not deviate from the spirit and scope of the present application should be covered within the scope of the claims of the present application.
Claims
1. A pressure sensing chip, characterized by, The pressure sensing chip comprises a first semiconductor substrate (1), a first sensitive resistor (11), a conductive layer (12) and a second sensitive resistor (13), the first sensitive resistor (11), the conductive layer (12) and the second sensitive resistor (13) are connected with the first semiconductor substrate (1), the pressure sensing chip has a thickness direction (Z), along the thickness direction (Z), the first sensitive resistor (11), the conductive layer (12) and the second sensitive resistor (13) are located on the same side of the first semiconductor substrate (1), the first sensitive resistor (11) and the second sensitive resistor (13) are close to the first semiconductor substrate (1) relative to the conductive layer (12); The pressure sensing chip comprises a first conductive part (5), one end of the first conductive part (5) is electrically connected with the conductive layer (12), the other end of the first conductive part (5) is electrically connected with the first semiconductor substrate (1); the first sensitive resistor (11) and the second sensitive resistor (13) are directly connected with the first semiconductor substrate (1); A projection plane (S) is defined, the projection plane (S) is perpendicular to the thickness direction (Z), the orthographic projection of the first sensitive resistor (11) on the projection plane (S) and the orthographic projection of the second sensitive resistor (13) on the projection plane (S) are located within the orthographic projection of the conductive layer (12) on the projection plane (S), and the conductive layer (12) is a unitary piece.
2. The pressure sensing die of claim 1, wherein: The conductive layer (12) comprises a first sub-conductive layer part (121) and a second sub-conductive layer part (122), the orthographic projection of the first sensitive resistor (11) on the projection plane (S) is at least partially located within the orthographic projection of the first sub-conductive layer part (121) on the projection plane (S), and the orthographic projection of the second sensitive resistor (13) on the projection plane (S) is at least partially located within the orthographic projection of the second sub-conductive layer part (122) on the projection plane (S).
3. The pressure sensing die of claim 1, wherein: A transverse direction (X) is defined, the transverse direction (X) is perpendicular to the thickness direction (Z), along the transverse direction (X), the conductive layer (12) is at least partially located between the first sensitive resistor (11) and the second sensitive resistor (13); The pressure sensing chip has a second conductive part (51), the pressure sensing chip comprises a first insulating layer (4), along the thickness direction (Z), the first insulating layer (4) is located between the first sensitive resistor (11) and the conductive layer (12), the second conductive part (51) is located between the first insulating layer (4) and the first semiconductor substrate (1), the second conductive part (51) is in contact with the first semiconductor substrate (1), and the second conductive part (51) is connected with the first semiconductor substrate (1), the second conductive part (51) is in contact with the first conductive part (5), and the second conductive part (51) is in contact with the first conductive part (5); Along the lateral direction (X), the second conductive part (51) is located between the first sensitive resistance (11) and the second sensitive resistance (13).
4. The pressure sensing die of claim 3, wherein: The pressure sensing chip comprises a second semiconductor substrate (2), along the thickness direction (Z), the second semiconductor substrate (2) is located between the first insulating layer (4) and the first semiconductor substrate (1), along the lateral direction (X), the second semiconductor substrate (2) is partially located between the first sensitive resistance (11) and the second conductive part (51), the second semiconductor substrate (2) is partially located between the second sensitive resistance (13) and the second conductive part (51), the first semiconductor substrate (1) is in contact with the second semiconductor substrate (2), and the first semiconductor substrate (1) is connected with the second semiconductor substrate (2).
5. The pressure sensing die of claim 1 or 2, wherein: The pressure sensing chip comprises a third conductive part (52), the third conductive part (52) is at least partially located outside the pressure sensing chip, the third conductive part (52) is in contact with the conductive layer (12), and the third conductive part (52) is connected with the conductive layer (12).
6. The pressure sensing die of claim 5, wherein: The pressure sensing chip comprises a first insulating layer (4), the first insulating layer (4) is located between the first sensitive resistance (11) and the conductive layer (12), the first insulating layer (4) has a first through hole (43), the first through hole (43) penetrates the first insulating layer (4) along the thickness direction (Z), part of the first conductive part (5) is located in the first through hole (43), the conductive layer (12) has a second through hole (123), the second through hole (123) penetrates the conductive layer (12) along the thickness direction (Z), another part of the first conductive part (5) is located in the second through hole (123), the third conductive part (52) is in contact with the first conductive part (5), and the third conductive part (52) is connected with the first conductive part (5).
7. The pressure sensing die of claim 1, wherein: The pressure sensing chip comprises a first conductive resistance (111), the pressure sensing chip comprises a first insulating layer (4), along the thickness direction (Z), the first insulating layer (4) is located between the first sensitive resistance (11) and the conductive layer (12), the first conductive resistance (111) is located between the first semiconductor substrate (1) and the first insulating layer (4), the first conductive resistance (111) is in contact with the first semiconductor substrate (1), and the first conductive resistance (111) is connected with the first sensitive resistance (11); The pressure sensing chip comprises a first lead-out part (112), along the thickness direction (Z), the first sensitive resistance (11) is closer to the first semiconductor substrate (1) than the first lead-out part (112), the first lead-out part (112) is connected with the first conductive resistance (111), the first lead-out part (112) has a first connection end (113), and the first connection end (113) is at least partially located outside the pressure sensing chip.
8. The pressure sensing die of claim 7, wherein: The pressure sensing chip has a cavity (31), the first sensitive resistor (11) is located on one side of the cavity (31) along the thickness direction (Z), the first conductive resistor (111), the first lead-out part (112), the first sensitive resistor (11) and the second sensitive resistor (13) are all located on the same side of the cavity (31) along the thickness direction (Z), and the first sensitive resistor (11) is closer to the cavity (31) than the first lead-out part (112) along the thickness direction (Z).
9. The pressure sensing die of claim 1, wherein: The pressure sensing chip comprises a second insulating layer (6), a glass substrate (61) and a third semiconductor substrate (3), the second insulating layer (6) is located between the first semiconductor substrate (1) and the third semiconductor substrate (3), the second insulating layer (6) is connected with the first semiconductor substrate (1), the third semiconductor substrate (3) is connected with the second insulating layer (6), the glass substrate (61) is located on the side of the third semiconductor substrate (3) away from the second insulating layer (6), and the glass substrate (61) is connected with the third semiconductor substrate (3), and the third semiconductor substrate (3) has a cavity (31).
10. The pressure sensing die of claim 1, wherein: The pressure sensing chip comprises a third conductive part (52), the third conductive part (52) is at least partially located outside the pressure sensing chip, the third conductive part (52) is connected with the conductive layer (12), and the third conductive part (52) and the first conductive part (5) are an integral piece; The pressure sensing chip comprises a first lead-out part (112), the first sensitive resistor (11) is closer to the first semiconductor substrate (1) than the first lead-out part (112) along the thickness direction (Z), the first lead-out part (112), the third conductive part (52) and the first conductive part (5) are made of the same material, and the conductive layer (12) is metal or doped polysilicon; The pressure sensing chip comprises a first insulating layer (4), the first insulating layer (4) is located between the first sensitive resistor (11) and the conductive layer (12), the first insulating layer (4) is located between the second sensitive resistor (13) and the conductive layer (12), the conductive layer (12) is connected with the first insulating layer (4), and the first sensitive resistor (11) and the second sensitive resistor (13) are both connected with the first insulating layer (4); The pressure sensing chip has a cavity (31), and the first sensitive resistor (11) is located on one side of the cavity (31); and the cavity (31) is a vacuum.