Laser slicing device for silicon carbide wafer

Abstract

The utility model provides a laser slicing device for a silicon carbide wafer, which comprises a fixed clamping table, a laser slicing device and a laser slicing device, the operation table is provided with at least one exhaust pipe and at least one refrigerant guide pipe, and the adsorption surface of the operation table adsorbs the other end of the wafer rod through the exhaust pipe; the control module is connected with the fixed clamping table and the operation table and used for synchronously rotating the wafer rod, the fixed clamping table and the operation table; and a femtosecond laser, an irradiation spot of the femtosecond laser is vertically aligned with the central axis of the wafer rod, and when the wafer rod is rotated circle by circle, the wafer rod is fused and etched until a newly formed wafer is fused and separated from the wafer rod.

Description

Technical Field

[0001] This utility model relates to a wafer slicing device, and more particularly to a laser slicing device for silicon carbide wafers. Background Technology

[0002] Existing technology uses a grinding device to cut wafer rods. The cut wafers are relatively thick. Under the condition of wafer rods of the same length, the existing grinding device cannot cut out more thin wafers.

[0003] Existing laser slicing devices and methods for wafers use a laser to irradiate the wafer rod horizontally along its central axis, focusing the laser onto a fixed thickness below the wafer rod surface to melt and separate it from the horizontal plane below that fixed thickness. The thin wafers formed by this technology generate a large amount of heat during laser melting, and due to the lack of cooling, these thin wafers are prone to cracking. Utility Model Content

[0004] This invention provides a laser slicing apparatus for silicon carbide wafers, comprising: a fixed clamp holding one end of a wafer rod; an operating table having at least one suction pipe and at least one refrigerant conduit, wherein the adsorption surface of the operating table adsorbs the other end of the wafer rod via the suction pipe; a control module connecting the fixed clamp and the operating table to synchronously rotate the wafer rod, the fixed clamp, and the operating table; and a femtosecond laser, the irradiation spot of which is vertically aligned with the central axis of the wafer rod, and performs melting and etching of the wafer rod as it rotates in revolutions until a newly formed wafer melts and breaks off from the wafer rod.

[0005] This invention provides a laser slicing method and apparatus for silicon carbide wafers, wherein the femtosecond laser uses green light. The scanning spot size is 2 μm.

[0006] This invention provides a laser slicing method and apparatus for silicon carbide wafers, wherein the coolant conduit absorbs heat from the wafer rod to reduce the operating temperature of the wafer rod.

[0007] This invention provides a laser slicing method and apparatus for silicon carbide wafers, wherein the spot of the femtosecond laser melts and etches the wafer rod, and three thin wafer slices are formed for each 1mm thick wafer rod.

[0008] This utility model provides a laser slicing method for silicon carbide wafers, comprising the following steps: Step 1, holding one end of a silicon carbide wafer rod with a fixed clamp, and adsorbing and fixing the other end of the wafer rod with the suction pipe of an operating table; Step 2, using the refrigerant conduit of the operating table, absorbing heat conduction through the wafer rod attached to the adsorption surface of the operating table; Step 3, using a control module to connect the fixed clamp and the operating table, synchronously rotating the wafer rod, the fixed clamp, and the operating table along the central axis of the wafer rod; Step 4, using a femtosecond laser pulse spot perpendicularly directed towards the central axis of the wafer rod to perform melting and etching of the wafer rod; Step 5, using a femtosecond laser... The laser, rotating the wafer rod from its outer diameter, melts and etches it to the central axis of the wafer rod, breaking the wafer rod to be cut, forming a first melt-cut surface and a second melt-cut surface, thereby forming a separated thin wafer and the cut wafer rod; and step 6, using the exhaust tube of the control module to adsorb the separated thin wafer and remove it; and step 7, using the exhaust tube of the control unit again to adsorb the newly formed second melt-cut surface of the cut wafer rod, proceeding to step 4, using a femtosecond laser pulse, perpendicularly directed towards the central axis of the cut wafer rod, to melt and etch the cut wafer rod, and then melt the next thin wafer.

[0009] This invention relates to a laser slicing method for silicon carbide wafers, wherein a green femtosecond laser is used. The scanning spot of the femtosecond laser is 2 μm. Three thin wafer slices are formed from each 1 mm thick wafer rod. Attached Figure Description

[0010] Figure 1 This is a schematic diagram of a laser slicing device for silicon carbide wafers before performing melting and etching of the wafer rod.

[0011] Figure 2 This is a schematic diagram of a laser slicing device for silicon carbide wafers according to this utility model, after molten etching of a wafer rod.

[0012] Figure 3 This is a schematic cross-sectional view of a laser slicing device for silicon carbide wafers, used for melting and etching wafer rods.

[0013] Figure 4 This is a schematic diagram of a laser slicing method for silicon carbide wafers according to this utility model.

[0014] Symbol explanation:

[0015] 1: Wafer rod

[0016] 11: Thin wafer

[0017] 111: First melting section

[0018] 112: Section 2 of the melting process

[0019] 2: Fixed clamping platform

[0020] 3: Control panel

[0021] 311: Adsorption surface

[0022] 32: Extraction pipe

[0023] 33: Refrigerant conduit

[0024] 5: Control Module

[0025] R0: Outer diameter of the wafer rod

[0026] R1: 1st melted inner diameter

[0027] R2: Second erosion inner diameter

[0028] C: Central axis. Detailed Implementation

[0029] like Figure 1 As shown, this utility model discloses a laser slicing device for silicon carbide wafers, comprising: a fixed clamping platform 2 for holding one end of a wafer rod 1; an operating platform 3 equipped with at least one suction pipe 32 and at least one refrigerant conduit 33, wherein the adsorption surface 311 of the operating platform 3 adsorbs the other end of the wafer rod 1 via the suction pipe 32; a control module 5 connected to the fixed clamping platform 2 and the operating platform 3 for synchronously rotating the wafer rod 1, the fixed clamping platform 2, and the operating platform 3; and a femtosecond laser, the irradiation spot of which is vertically aligned with the central axis of the wafer rod 1, and performs melting and etching of the wafer rod 1 as it rotates in revolutions until a newly formed wafer melts and breaks off from the wafer rod 1.

[0030] like Figures 1 to 3 As shown, this invention discloses a laser slicing apparatus for silicon carbide wafers, wherein the femtosecond laser uses green light. The scanning spot is 2μm. The coolant conduit 33 absorbs heat from the wafer rod 1, reducing its operating temperature. The femtosecond laser spot melts and etches the wafer rod 1, forming three thin wafer slices for every 1mm thickness of the wafer rod 1.

[0031] like Figure 2 ,as well as Figure 3 As shown, this utility model discloses a laser slicing device for silicon carbide wafers. The irradiation spot of the femtosecond laser is vertically aligned with the central axis of the wafer rod 1 from left to right. When the wafer rod 1 is rotated in circles, it melts and etches the wafer rod 1. The left figure shows the femtosecond laser melting and etching from the outer diameter R0 of the wafer rod 1 to the first etched inner diameter R1. The middle figure shows the femtosecond laser melting and etching to the second etched inner diameter R2. The right figure shows the femtosecond laser melting and etching to the central axis C, melting and cutting the wafer rod 1 to be cut, forming the first etched section 111 and the second etched section 112. This forms a separated thin wafer 11 and the cut wafer rod 1, until a newly formed wafer is melted and cut off from the wafer rod 1. This invention discloses a laser slicing device for silicon carbide wafers. The femtosecond laser etches the wafer rod from an outer diameter R0, a first etch inner diameter R1, a second etch inner diameter R2, and finally melts and etches to the central axis C, thus melting and cutting the wafer rod 1 to be cut. The device is not limited to the implementation state of placing the wafer rod horizontally. In another embodiment of this invention, the wafer rod can also be placed vertically to melt and cut the wafer rod 1 to be cut.

[0032] like Figure 4As shown, this utility model discloses a laser slicing method for silicon carbide wafers, comprising the following steps: Step 1, holding one end of a silicon carbide wafer rod 1 by a fixed clamping stage 2, and adsorbing and fixing the other end of the wafer rod 1 by the suction pipe 32 of an operating table 3; Step 2, using the refrigerant conduit 33 of the operating table 3 to absorb heat conduction through the wafer rod 1 attached to the adsorption surface 311 of the operating table 3; Step 3, using the control module 5 to connect the fixed clamping stage 2 and the operating table 3, and synchronously rotating the wafer rod 1, the fixed clamping stage 2, and the operating table 3 along the central axis of the wafer rod 1; Step 4, using a femtosecond laser pulse spot perpendicularly directed towards the central axis of the wafer rod 1 to perform melting and etching of the wafer rod 1; Step 5, using a femtosecond laser pulse spot... The laser (or a laser) rotates the wafer rod 1 around its outer diameter R0, melting and etching it to the central axis C of the wafer rod 1, thus melting and cutting the wafer rod 1 to be cut, forming a first melt-cut surface 111 and a second melt-cut surface 112, thereby forming a separated thin wafer 11 and a cut wafer rod 1; and in step 6, the vacuum tube 32 of the control module 5 is used to adsorb the separated thin wafer and remove it; and in step 7, the vacuum tube 32 of the control unit is used again to adsorb the newly formed second melt-cut surface 112 of the cut wafer rod 1, and then in step 4, a femtosecond laser pulse is used to be directed vertically toward the central axis of the cut wafer rod 1 to melt and etch the cut wafer rod 1, and then the next thin wafer is melted and cut.

[0033] This invention discloses a laser slicing method for silicon carbide wafers, wherein a green femtosecond laser is used. The scanning spot of the femtosecond laser is 2 μm. Three thin wafer slices are formed from each 1 mm thick wafer rod 1.

[0034] This invention relates to a laser slicing device and method for silicon carbide wafers, which overcomes the shortcomings of existing technologies that cannot cut multiple wafers per unit length. In this invention, each 1mm thick wafer rod 1 forms 3 thin wafers, thereby improving productivity and reducing material waste. This invention discloses a laser slicing apparatus and method for silicon carbide wafers. It uses a femtosecond laser pulse spot, perpendicularly directed towards the central axis of the wafer rod 1, to perform melting and etching of the wafer rod 1. The femtosecond laser is then used to rotate the wafer rod 1 around its outer diameter, melting and etching to its central axis, thus breaking the wafer rod 1 to be cut and forming a first molten section 111 and a second molten section 112. This results in a separated thin wafer 11 and the cut wafer rod 1, unlike previous technologies that required horizontal laser beams towards the central axis of the wafer rod 1 for melting and etching.

[0035] The above description and explanation are merely illustrative of preferred embodiments of the present utility model. Those skilled in the art can make other modifications based on the following claims and the above description, but such modifications should still be within the creative spirit of the present utility model and within the scope of the claims of the present utility model.

Claims

1. A laser slicing device for silicon carbide wafers, characterized in that, include: A fixed clamp holds one end of a wafer rod. An operating table is provided with at least one exhaust pipe and at least one refrigerant conduit, wherein the adsorption surface of the operating table adsorbs the other end of the wafer rod through the exhaust pipe; A control module connects the fixed clamp and the operating table to synchronously rotate the wafer rod, the fixed clamp, and the operating table; and A femtosecond laser, with its spot perpendicularly aligned with the central axis of the wafer rod, is used to melt and etch the wafer rod as it rotates in circles until a newly formed wafer melts and breaks off from the wafer rod.

2. The laser slicing apparatus for silicon carbide wafers as described in claim 1, characterized in that, This femtosecond laser uses green light.

3. The laser slicing apparatus for silicon carbide wafers as described in claim 1, characterized in that, The scanning spot size is 2μm.

4. The laser slicing apparatus for silicon carbide wafers as described in claim 1, characterized in that, The refrigerant conduit absorbs heat from the wafer ingot to lower its operating temperature.

5. The laser slicing apparatus for silicon carbide wafers as described in claim 1, characterized in that, The femtosecond laser spot melts and etches the wafer rod, forming three thin wafers for every 1mm thick wafer rod.

Images