Silicon wafer epitaxial base with silicon carbide coating

Abstract

The utility model relates to the technical field of semiconductor processing, in particular to a silicon wafer epitaxial base with a silicon carbide coating, which comprises a base body and a fixing mechanism. Five mounting grooves distributed in an annular array are formed in the base body, fixing columns are arranged in the mounting grooves, mounting discs and placing plates are coaxially arranged on the fixing columns, and the fixing columns, the mounting discs and the base body are provided with channels in a communicating mode. The fixing mechanism comprises a piston slidably connected to the interior of the channel, a connecting rod coaxially arranged on the piston, four vertical plates distributed on the piston in an annular array mode, a limiting frame arranged on the connecting rod and provided with a through hole, and a stabilizing assembly arranged on the base body, the vertical plates are slidably arranged in the channel, and gaps are formed between the vertical plates. According to the utility model, not only can a plurality of silicon wafers be simultaneously placed, but also the silicon wafers can be stably, safely and fixedly placed on the base, so that the production and processing efficiency of the silicon wafers is improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and in particular to a silicon wafer epitaxial substrate with a silicon carbide coating. Background Technology

[0002] Silicon carbide-coated silicon wafer epitaxial substrates are advanced substrate materials used in semiconductor manufacturing. These substrates are typically made of graphite and coated with a layer of silicon carbide to improve their high-temperature resistance, corrosion resistance, and adhesion to the epitaxial layer. The silicon carbide coating effectively prevents particulate contamination during silicon carbide epitaxial growth, ensuring high purity and high quality of the wafer.

[0003] Chinese Patent CN217266140U discloses a silicon wafer epitaxial base with a silicon carbide coating. The base includes a square cylinder fixedly connected to the top of a base. A first motor is fixedly connected to the left side of the square cylinder, and a rotating rod is fixedly connected to the right end of the first motor. A bevel gear is fixedly connected to the surface of the rotating rod, and a bevel gear ring is meshed with the bottom of the bevel gear. The bottom of the bevel gear ring is rotatably connected to the middle of the top of the base. A lead screw is fixedly connected to the right end of the rotating rod, and a threaded cylinder is threadedly connected to the surface of the lead screw. A clamping block is fixedly connected to the other end of the threaded cylinder, and a slide bar is fixedly connected to the bottom of the clamping block. A sliding groove is fixedly connected to the bottom of the slide bar. This silicon wafer epitaxial base with a silicon carbide coating, through its clamping mechanism, avoids potential movement of the silicon wafer during epitaxy, thereby facilitating the epitaxial processing of the silicon wafer surface and making it easier to handle the processed silicon wafer.

[0004] However, the above technical solution has the following shortcomings: When the clamping mechanism clamps the silicon wafer, the silicon wafer itself is thin and fragile, and the motor is difficult to control accurately by visual inspection. This not only easily damages the silicon wafer, but also the base can only hold one silicon wafer at a time. It is necessary to repeatedly install and remove the silicon wafer and control the opening and closing of the drive components, which greatly reduces the production efficiency of silicon wafers. Utility Model Content

[0005] The purpose of this invention is to address the problems existing in the background technology by proposing a silicon wafer epitaxial substrate with a silicon carbide coating, which can not only place multiple silicon wafers at the same time, but also stably and safely fix the silicon wafers on the substrate, thereby improving the production and processing efficiency of silicon wafers.

[0006] The present invention provides a silicon wafer epitaxial substrate with a silicon carbide coating, comprising a substrate body and a fixing mechanism. The substrate body has five mounting slots arranged in a ring array. A fixing post is located inside each mounting slot. A mounting plate and a placement plate are coaxially mounted on each fixing post. A channel connects the fixing post, mounting plate, and substrate body. The fixing mechanism includes a piston slidably connected inside the channel, a connecting rod coaxially mounted on the piston, four upright plates arranged in a ring array on the piston, a limiting frame with through holes mounted on the connecting rod, and a stabilizing component mounted on the substrate body. The upright plates are slidably mounted inside the channel, and gaps are provided between the upright plates.

[0007] Preferably, an annular support seat is coaxially provided on the mounting plate.

[0008] Preferably, the stabilizing component includes a first magnet disposed on the limiting frame, a fixing rod disposed inside the base body, and a second magnet rotatably connected to the fixing rod, wherein the first magnet and the second magnet are magnetically connected.

[0009] Preferably, the base body is provided with a groove and a stand, the groove is provided with a baffle, the limit frame is provided with a guide block, and the stand and the groove are provided with a sliding groove for the guide block to slide vertically.

[0010] Preferably, a ball grip is provided on the connecting rod.

[0011] Preferably, the mounting plate has two symmetrically distributed pressure blocks, and the mounting groove has a support component inside.

[0012] Preferably, the support assembly includes a fixed cylinder disposed on the mounting plate, a base disposed at the bottom of the mounting groove, a support column disposed on the base, a convex ring coaxially disposed on the support column, and springs disposed at both ends on the convex ring and the fixed cylinder respectively, wherein the convex ring and the support column are slidably connected to the fixed cylinder.

[0013] Preferably, a rotating shaft is coaxially arranged on the base body, and a gear is coaxially arranged on the rotating shaft.

[0014] Compared with the prior art, the present invention has the following beneficial technical effects:

[0015] 1. This utility model controls the fixing effect on the silicon wafer by changing the pressure in the set channel. It is not only simple to operate and easy to control the occurrence and closure of the fixing mechanism, but also will not damage the silicon wafer body. It has good practicality. In addition, the set stabilizing components, baffles and uprights can stabilize, limit and guide the piston and uprights, making it easy for operators to use.

[0016] 2. This utility model can simultaneously place multiple silicon wafers for processing by setting multiple mounting slots, thereby improving production and processing efficiency. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of an embodiment of the present utility model;

[0018] Figure 2 This is a schematic diagram of the cross-sectional structure of the base body;

[0019] Figure 3 for Figure 2 Enlarged structural diagram at point A;

[0020] Figure 4 This is a schematic diagram of the internal structure of the pressing component.

[0021] Reference numerals: 1. Base body; 2. Mounting groove; 3. Fixing column; 4. Mounting plate; 5. Placement plate; 6. Annular support seat; 7. Channel; 8. Piston; 9. Connecting rod; 10. Ball gripper; 11. Limiting frame; 12. First magnet; 13. Fixing rod; 14. Second magnet; 15. Vertical plate; 16. Baffle; 17. Guide block; 18. Frame; 19. Pressure block; 20. Fixing cylinder; 21. Base; 22. Support column; 23. Protruding ring; 24. Spring; 25. Rotating shaft; 26. Gear. Detailed Implementation

[0022] Example 1

[0023] like Figures 1-4 As shown in the figure, this embodiment proposes a silicon wafer epitaxial substrate with a silicon carbide coating, including a substrate body 1 and a fixing mechanism. The substrate body 1 has five mounting slots 2 arranged in a ring array. A fixing post 3 is disposed inside each mounting slot 2. A mounting disk 4 and a placement plate 5 are coaxially disposed on the fixing post 3. A ring-shaped support seat 6 is coaxially disposed on the mounting disk 4. The ring-shaped support seat 6 supports the silicon wafer while also restricting its horizontal position. A channel 7 connects the fixing post 3, the mounting disk 4, and the substrate body 1.

[0024] like Figure 2 and Figure 3 As shown, the fixing mechanism includes a piston 8 slidably connected inside the channel 7, a connecting rod 9 coaxially mounted on the piston 8, four upright plates 15 arranged in a ring array on the piston 8, a limiting frame 11 with a through hole mounted on the connecting rod 9, and a stabilizing component mounted on the base body 1. The upright plates 15 are slidably mounted inside the channel 7, and there is a gap between the upright plates 15. A ball gripping device 10 is mounted on the connecting rod 9.

[0025] In this embodiment, after the silicon wafer is placed on the placement plate 5, the connecting rod 9 and piston 8 are pulled upwards by holding the ball 10 and then stopped. This stops the pulling action, causing the limiting frame 11 to come into contact with the silicon wafer. Consequently, the piston 8 and the silicon wafer change the size of the sealed space within the channel 7, making the internal pressure less than the external atmospheric pressure, thus fixing the silicon wafer to the placement plate 5. When the silicon wafer needs to be unfixed, the ball 10 is pulled upwards again until the piston 8 disengages from the channel 7 and enters the groove, and part of the length of the upright plate 15 also disengages from the channel 7. Because the gap in the upright plate 15 and the through hole in the limiting frame 11 connect the channel 7 to the outside, the pressure in the channel 7 returns to normal, and the silicon wafer is no longer adsorbed onto the placement plate 5. This method is not only simple and convenient to operate, but also easy to control the fixing effect on the silicon wafer, without damaging the silicon wafer itself, thus demonstrating good practicality.

[0026] Example 2

[0027] like Figure 2 and Figure 3 As shown, this embodiment proposes a silicon wafer epitaxial substrate with a silicon carbide coating. Compared with Embodiment 1, in this embodiment, the stabilizing component includes a first magnet 12 disposed on the limiting frame 11, a fixing rod 13 disposed inside the substrate body 1, and a second magnet 14 rotatably connected to the fixing rod 13. The first magnet 12 and the second magnet 14 are magnetically connected.

[0028] When the connecting rod 9 is pulled upward to fix the silicon wafer on the placement plate 5, the pulling of the connecting rod 9 can be stopped when the first magnet 12 of the limiting frame 11 contacts the second magnet 14. At this time, the pressure is moderate and the magnetic attraction can also improve the stability of silicon wafer processing.

[0029] The base body 1 is provided with a groove and a stand 18. A baffle 16 is provided inside the groove. A guide block 17 is provided on the limiting frame 11. The stand 18 and the groove are provided with a sliding groove for the guide block 17 to slide vertically.

[0030] When the silicon wafer is finished and needs to be removed, the second magnet 14 is rotated by the fixing rod 13, and then the connecting rod 9 is pulled upward to make the piston 8 and part of the vertical plate 15 disengage from the channel 7 until the upper surface of the piston 8 abuts against the baffle 16. This prevents the vertical plate 15 from being completely disengaged from the channel 7 and making it difficult to reconnect and enter. The sliding groove provided in this way can guide the movement of the connecting rod 9 and the piston 8.

[0031] Example 3

[0032] like Figure 2 and Figure 4As shown, this embodiment proposes a silicon wafer epitaxial substrate with a silicon carbide coating. Compared with the first embodiment, in this embodiment, the mounting disk 4 is provided with two symmetrically distributed pressure blocks 19, and the mounting groove 2 is provided with a support assembly. The support assembly includes a fixed cylinder 20 provided on the mounting disk 4, a base 21 provided at the bottom of the mounting groove 2, a support column 22 provided on the base 21, a convex ring 23 coaxially provided on the support column 22, and springs 24 provided at both ends on the convex ring 23 and the fixed cylinder 20 respectively. The convex ring 23 and the support column 22 are slidably connected to the fixed cylinder 20, and the convex ring 23 is used to limit the position of the fixed cylinder 20.

[0033] In this embodiment, when it is necessary to remove the silicon wafer from the placement plate 5 and the annular support 6, the pressing block 19 is pressed down, the pressing block 19 squeezes the mounting plate 4, and then the mounting plate 4 drives the fixing cylinder 20 to squeeze the spring 24, so that the outer ring of the mounting plate 4 bends downward, so that the silicon wafer is separated from the annular support 6, and the silicon wafer can be taken out from the placement plate 5. The operation is simple and convenient, and at the same time improves the production efficiency of silicon wafer preparation.

[0034] Example 4

[0035] like Figure 2 As shown in the figure, the silicon wafer epitaxial substrate with silicon carbide coating proposed in this embodiment has a rotating shaft 25 coaxially arranged on the substrate body 1, and a gear 26 coaxially arranged on the rotating shaft 25. The gear 26 on the rotating shaft 25 is a driven member and can mesh with an external driving member (not shown) to drive the substrate body 1 to rotate so as to process the silicon wafer.

[0036] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited thereto. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. A silicon wafer epitaxial substrate with a silicon carbide coating, characterized in that, include: The base body (1) has five mounting slots (2) arranged in a ring array. The mounting slots (2) have fixed columns (3) inside. The fixed columns (3) have mounting plates (4) and placement plates (5) arranged coaxially. The fixed columns (3), mounting plates (4) and base body (1) are connected by a channel (7). The fixing mechanism includes a piston (8) slidably connected inside the channel (7), a connecting rod (9) coaxially disposed on the piston (8), four upright plates (15) arranged in a ring array on the piston (8), a limiting frame (11) disposed on the connecting rod (9) and having a through hole, and a stabilizing component disposed on the base body (1). The upright plates (15) are slidably disposed inside the channel (7), and gaps are provided between the upright plates (15).

2. The silicon wafer epitaxial substrate with a silicon carbide coating according to claim 1, characterized in that, An annular support seat (6) is coaxially mounted on the mounting plate (4).

3. A silicon wafer epitaxial substrate with a silicon carbide coating according to claim 1, characterized in that, The stabilizing component includes a first magnet (12) disposed on the limiting frame (11), a fixing rod (13) disposed inside the base body (1), and a second magnet (14) rotatably connected to the fixing rod (13), wherein the first magnet (12) and the second magnet (14) are magnetically connected.

4. A silicon wafer epitaxial substrate with a silicon carbide coating according to claim 1, characterized in that, The base body (1) is provided with a groove and a stand (18). A baffle (16) is provided inside the groove. A guide block (17) is provided on the limiting frame (11). The stand (18) and the groove are provided with a sliding groove for the guide block (17) to slide vertically.

5. A silicon wafer epitaxial substrate with a silicon carbide coating according to claim 1, characterized in that, A ball grip (10) is provided on the connecting rod (9).

6. A silicon wafer epitaxial substrate with a silicon carbide coating according to claim 1, characterized in that, The mounting plate (4) has two symmetrically distributed pressure blocks (19), and the mounting groove (2) has a support component inside.

7. A silicon wafer epitaxial substrate with a silicon carbide coating according to claim 6, characterized in that, The support assembly includes a fixed cylinder (20) on the mounting plate (4), a base (21) at the bottom of the mounting groove (2), a support column (22) on the base (21), a convex ring (23) coaxially mounted on the support column (22), and a spring (24) with its two ends respectively mounted on the convex ring (23) and the fixed cylinder (20). The convex ring (23) and the support column (22) are both slidably connected to the fixed cylinder (20).

8. A silicon wafer epitaxial substrate with a silicon carbide coating according to claim 1, characterized in that, A rotating shaft (25) is coaxially mounted on the base body (1), and a gear (26) is coaxially mounted on the rotating shaft (25).

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