Silicon carbide epitaxial growth equipment

Abstract

The utility model provides epitaxial growth equipment for silicon carbide. The epitaxial growth equipment comprises a cavity, a valve group, a pressure control assembly and a material transfer mechanism, a growth chamber, a transmission chamber, a substrate slice temporary storage chamber and an epitaxial wafer temporary storage chamber are arranged in the cavity. The valve group comprises a first switch valve arranged between the substrate slice temporary storage chamber and the transmission chamber, a second switch valve arranged between the growth chamber and the transmission chamber, and a third switch valve arranged between the epitaxial slice temporary storage chamber and the transmission chamber. The pressure control assembly comprises a first pressure controller used for controlling the pressure in the substrate temporary storage chamber and a second pressure controller used for controlling the pressure in the epitaxial wafer temporary storage chamber. The material transferring mechanism is arranged in the conveying mechanism. According to the silicon carbide epitaxial wafer growth equipment provided by the utility model, only the pressure of the substrate slice temporary storage chamber and the epitaxial wafer temporary storage chamber needs to be adjusted when the substrate slice or the epitaxial wafer is transferred, so that the growth time is saved, and the cleanliness of the growth chamber can be better guaranteed.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a silicon carbide epitaxial growth apparatus. Background Technology

[0002] Silicon carbide epitaxial growth generally requires a low-pressure environment (50-150 mbar) in the growth chamber. After growth, the silicon carbide epitaxial wafer needs to be transferred out. Before transfer, the pressure in the growth chamber needs to be restored to normal pressure. Therefore, the pressure in the growth chamber needs to fluctuate between normal pressure and low pressure. The growth chamber environment is relatively complex and the chamber is large. The pressure needs to be changed slowly, which is time-consuming. Moreover, by-products are generated during silicon carbide growth and adhere to the growth chamber. Frequent pressure changes may cause the by-products to fall off and affect the chamber environment. Utility Model Content

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. To this end, this invention provides a silicon carbide epitaxial growth apparatus, which aims to solve the problem that in related technologies, the pressure of the growth chamber for silicon carbide growth needs to be repeatedly switched between atmospheric pressure and low pressure, which wastes time, and the frequent pressure changes may cause deposits on the inner wall of the growth chamber to fall off and affect the chamber environment.

[0004] This utility model provides a silicon carbide epitaxial growth apparatus, comprising:

[0005] The cavity includes a growth chamber, a transfer chamber, a substrate storage chamber, and an epitaxial wafer storage chamber, all of which are connected to the transfer chamber.

[0006] The valve assembly includes a first switching valve, a second switching valve, and a third switching valve. The first switching valve is disposed between the substrate storage chamber and the transfer chamber. The second switching valve is disposed between the growth chamber and the transfer chamber. The third switching valve is disposed between the epitaxial wafer storage chamber and the transfer chamber.

[0007] The pressure control assembly includes a first pressure controller and a second pressure controller, wherein the first pressure controller is used to control the pressure in the substrate storage chamber and the second pressure controller is used to control the pressure in the epitaxial wafer storage chamber.

[0008] A material transfer mechanism is disposed within the transfer chamber, and the movable clamping end of the material transfer mechanism is used to move between the substrate temporary storage chamber, the transfer chamber, the growth chamber, and the epitaxial wafer temporary storage chamber.

[0009] According to the silicon carbide epitaxial growth equipment provided by this utility model, the first switching valve is a gate valve.

[0010] According to the silicon carbide epitaxial growth equipment provided by this utility model, the second switching valve is a gate valve.

[0011] According to the silicon carbide epitaxial growth equipment provided by this utility model, the third switching valve is a gate valve.

[0012] According to the silicon carbide epitaxial growth equipment provided by this utility model, the material transfer mechanism includes a robotic arm.

[0013] According to the silicon carbide epitaxial growth equipment provided by this utility model, the pressure control range of the first pressure controller is at least 50 mbar to atmospheric pressure.

[0014] According to the silicon carbide epitaxial growth equipment provided by this utility model, the pressure control range of the second pressure controller is at least 50 mbar to atmospheric pressure.

[0015] This utility model has the following advantages due to the adoption of the above technical solution:

[0016] The silicon carbide epitaxial growth equipment provided by this utility model includes a cavity, a valve group, a pressure control component, and a material transfer mechanism. The cavity contains a growth chamber, a transfer chamber, a substrate storage chamber, and an epitaxial wafer storage chamber, all of which are connected to the transfer chamber. The valve group includes a first switching valve, a second switching valve, and a third switching valve. The first switching valve is located between the substrate storage chamber and the transfer chamber, the second switching valve is located between the growth chamber and the transfer chamber, and the third switching valve is located between the epitaxial wafer storage chamber and the transfer chamber. The pressure control component includes a first pressure controller and a second pressure controller. The first pressure controller controls the pressure in the substrate storage chamber, and the second pressure controller controls the pressure in the epitaxial wafer storage chamber. The material transfer mechanism is located within the transfer chamber, and its movable clamping end can move between the substrate storage chamber, the transfer chamber, the growth chamber, and the epitaxial wafer storage chamber. Before silicon carbide epitaxial growth, firstly, ensure that the first and third switching valves are closed, and then adjust the pressure in the growth chamber and transfer chamber to the production pressure. Next, adjust the pressure in the substrate storage chamber to atmospheric pressure using the first pressure controller, open the substrate storage chamber, and place the substrate inside. Then, adjust the pressure in the substrate storage chamber to the production pressure using the first pressure controller, open the first switching valve, and transfer the substrate from the substrate storage chamber to the transfer chamber using the material transfer mechanism, closing the first switching valve. Then, open the second switching valve, and transfer the substrate from the transfer chamber to the growth chamber using the material transfer mechanism, closing the second switching valve. After growth is complete, open the second switching valve, and transfer the grown epitaxial wafer from the growth chamber to the transfer chamber using the material transfer mechanism. Then, adjust the pressure in the epitaxial wafer storage chamber to the production pressure using the second pressure controller, open the third switching valve, and transfer the epitaxial wafer from the transfer chamber to the epitaxial wafer storage chamber using the material transfer mechanism, closing the third switching valve. Then, the pressure in the epitaxial wafer storage chamber is adjusted to atmospheric pressure using a second pressure controller. The epitaxial wafer storage chamber is then opened, and the epitaxial wafer is removed. This completes one silicon carbide epitaxial wafer growth cycle. The silicon carbide epitaxial wafer growth equipment provided by this invention only requires adjusting the pressure in the substrate storage chamber and the epitaxial wafer storage chamber during the silicon carbide growth process. Because the space in the substrate storage chamber and the epitaxial wafer storage chamber is small, pressure adjustment can be performed quickly, saving growth time. The growth chamber maintains a constant production pressure without the need for pressure adjustment, which better ensures the cleanliness of the growth chamber. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of a silicon carbide epitaxial growth apparatus provided in one embodiment of the present invention.

[0019] Figure label:

[0020] 110: Growth chamber; 120: Transfer chamber; 130: Substrate storage chamber; 140: Epitaxial wafer storage chamber; 210: First switching valve; 220: Second switching valve; 230: Third switching valve; 310: First pressure controller; 320: Second pressure controller. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0022] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0024] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0025] In this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0026] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0027] The silicon carbide epitaxial growth equipment provided by this utility model includes a cavity, a valve group, a pressure control component, and a material transfer mechanism. The cavity contains a growth chamber, a transfer chamber, a substrate storage chamber, and an epitaxial wafer storage chamber, all of which are connected to the transfer chamber. The valve group includes a first switching valve, a second switching valve, and a third switching valve. The first switching valve is located between the substrate storage chamber and the transfer chamber, the second switching valve is located between the growth chamber and the transfer chamber, and the third switching valve is located between the epitaxial wafer storage chamber and the transfer chamber. The pressure control component includes a first pressure controller and a second pressure controller. The first pressure controller controls the pressure in the substrate storage chamber, and the second pressure controller controls the pressure in the epitaxial wafer storage chamber. The material transfer mechanism is located within the transfer chamber, and its movable clamping end can move between the substrate storage chamber, the transfer chamber, the growth chamber, and the epitaxial wafer storage chamber. Before silicon carbide epitaxial growth, firstly, ensure that the first and third switching valves are closed, and then adjust the pressure in the growth chamber and transfer chamber to the production pressure. Next, adjust the pressure in the substrate storage chamber to atmospheric pressure using the first pressure controller, open the substrate storage chamber, and place the substrate inside. Then, adjust the pressure in the substrate storage chamber to the production pressure using the first pressure controller, open the first switching valve, and transfer the substrate from the substrate storage chamber to the transfer chamber using the material transfer mechanism, closing the first switching valve. Then, open the second switching valve, and transfer the substrate from the transfer chamber to the growth chamber using the material transfer mechanism, closing the second switching valve. After growth is complete, open the second switching valve, and transfer the grown epitaxial wafer from the growth chamber to the transfer chamber using the material transfer mechanism. Then, adjust the pressure in the epitaxial wafer storage chamber to the production pressure using the second pressure controller, open the third switching valve, and transfer the epitaxial wafer from the transfer chamber to the epitaxial wafer storage chamber using the material transfer mechanism, closing the third switching valve. Then, the pressure in the epitaxial wafer storage chamber is adjusted to atmospheric pressure using a second pressure controller. The epitaxial wafer storage chamber is then opened, and the epitaxial wafer is removed. This completes one silicon carbide epitaxial wafer growth cycle. The silicon carbide epitaxial wafer growth equipment provided by this invention only requires adjusting the pressure in the substrate storage chamber and the epitaxial wafer storage chamber during the silicon carbide growth process. Because the space in the substrate storage chamber and the epitaxial wafer storage chamber is small, pressure adjustment can be performed quickly, saving growth time. The growth chamber maintains a constant production pressure without the need for pressure adjustment, which better ensures the cleanliness of the growth chamber.

[0028] The following is combined Figure 1 This invention describes the silicon carbide epitaxial growth equipment.

[0029] This utility model provides a silicon carbide epitaxial growth apparatus, including a cavity, a valve group, a pressure control component, and a material transfer mechanism. The cavity includes a growth chamber 110, a transfer chamber 120, a substrate storage chamber 130, and an epitaxial wafer storage chamber 140, all of which are connected to the transfer chamber 120. The valve group includes a first switching valve 210, a second switching valve 220, and a third switching valve 230. The first switching valve 210 is located between the substrate storage chamber 130 and the transfer chamber 120; the second switching valve 220 is located between the growth chamber 110 and the transfer chamber 120; and the third switching valve 230 is located between the epitaxial wafer storage chamber 140 and the transfer chamber 120. The pressure control assembly includes a first pressure controller 310 and a second pressure controller 320. The first pressure controller 310 controls the pressure within the substrate storage chamber 130, and the second pressure controller 320 controls the pressure within the epitaxial wafer storage chamber 140. A material transfer mechanism is disposed within the transfer chamber 120, and the movable clamping end of the material transfer mechanism can move between the growth chamber 110, the transfer chamber 120, the substrate storage chamber 130, and the epitaxial wafer storage chamber 140.

[0030] Before silicon carbide epitaxial growth, firstly, ensure that the first switching valve 210 and the third switching valve 230 are closed, and then adjust the pressure of the growth chamber 110 and the transfer chamber 120 to the production pressure. Next, adjust the pressure of the substrate storage chamber 130 to atmospheric pressure using the first pressure controller 310, open the substrate storage chamber 130, and place the substrate into it. Then, adjust the pressure of the substrate storage chamber 130 to the production pressure using the first pressure controller 310, and open the first switching valve 210. Then, use the material transfer mechanism to transfer the substrate from the substrate storage chamber 130 to the transfer chamber 120, and close the first switching valve 210. Finally, open the second switching valve 220, and use the material transfer mechanism to transfer the substrate from the transfer chamber 120 to the growth chamber 110, and close the second switching valve 220. After growth is complete, the second switch valve 220 is opened, and the material transfer mechanism transfers the grown epitaxial wafer from the growth chamber 110 to the transfer chamber 120. Then, the pressure in the epitaxial wafer storage chamber 140 is adjusted to the production pressure using the second pressure controller 320. Next, the third switch valve 230 is opened, and the material transfer mechanism transfers the epitaxial wafer from the transfer chamber 120 to the epitaxial wafer storage chamber 140. The third switch valve 230 is then closed. The pressure in the epitaxial wafer storage chamber 140 is then adjusted to atmospheric pressure using the second pressure controller 320. Finally, the epitaxial wafer storage chamber 140 is opened, and the epitaxial wafer is removed. This completes one silicon carbide epitaxial wafer growth cycle. The silicon carbide epitaxial wafer growth equipment provided by this invention only requires adjusting the pressure of the substrate storage chamber 130 and the epitaxial wafer storage chamber 140 during the silicon carbide growth process. Because the spaces in the substrate storage chamber 130 and the epitaxial wafer storage chamber 140 are small, pressure adjustments can be made quickly, saving growth time. The growth chamber 110 maintains a constant production pressure without requiring pressure adjustments, thus better ensuring the cleanliness of the growth chamber 110.

[0031] In some embodiments, the first switching valve 210, the second switching valve 220, and the third switching valve 230 are all gate valves.

[0032] In some embodiments, the material transfer mechanism can be a robotic arm. The robotic arm can transfer the substrate from the substrate storage chamber 130 to the transfer chamber 120 when the first switching valve 210 is opened; it can also transfer the substrate from the transfer chamber 120 to the growth chamber 110 when the second switching valve 220 is opened; it can also transfer the epitaxial wafer grown in the growth chamber 110 to the transfer chamber 120 when the second switching valve 220 is opened; and it can also transfer the epitaxial wafer from the transfer chamber 120 to the epitaxial wafer storage chamber 140 when the third switching valve 230 is opened.

[0033] In some embodiments, the pressure control range of the first pressure controller 310 is at least 50 mbar to atmospheric pressure.

[0034] Since the growth pressure during the silicon carbide epitaxial growth process is between 50 mbar and 150 mbar, the minimum control pressure of the first pressure controller 310 can reach at least 50 mbar. Since the external environment pressure is atmospheric pressure, the maximum control pressure of the first pressure controller 310 can reach at least atmospheric pressure.

[0035] In some embodiments, the pressure control range of the second pressure controller 320 is at least 50 mbar to atmospheric pressure.

[0036] Since the growth pressure during the silicon carbide epitaxial growth process is between 50 mbar and 150 mbar, the minimum control pressure of the second pressure controller 320 can reach at least 50 mbar. Since the external environment pressure is atmospheric pressure, the maximum control pressure of the second pressure controller 320 can reach at least atmospheric pressure.

[0037] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A silicon carbide epitaxial growth apparatus, characterized in that, include: The cavity is provided with a growth chamber (110), a transfer chamber (120), a substrate storage chamber (130), and an epitaxial wafer storage chamber (140). The growth chamber (110), the substrate storage chamber (130), and the epitaxial wafer storage chamber (140) are all connected to the transfer chamber (120). The valve assembly includes a first switching valve (210), a second switching valve (220), and a third switching valve (230). The first switching valve (210) is disposed between the substrate storage chamber (130) and the transfer chamber (120). The second switching valve (220) is disposed between the growth chamber (110) and the transfer chamber (120). The third switching valve (230) is disposed between the epitaxial wafer storage chamber (140) and the transfer chamber (120). The pressure control assembly includes a first pressure controller (310) and a second pressure controller (320), wherein the first pressure controller (310) is used to control the pressure in the substrate storage chamber (130) and the second pressure controller (320) is used to control the pressure in the epitaxial wafer storage chamber (140); A material transfer mechanism is disposed within the transfer chamber (120), and the movable clamping end of the material transfer mechanism is used to move between the substrate temporary storage chamber (130), the transfer chamber (120), the growth chamber (110), and the epitaxial wafer temporary storage chamber (140).

2. The silicon carbide epitaxial growth apparatus according to claim 1, characterized in that, The first switching valve (210) is a gate valve.

3. The silicon carbide epitaxial growth apparatus according to claim 1, characterized in that, The second switching valve (220) is a gate valve.

4. The silicon carbide epitaxial growth apparatus according to claim 1, characterized in that, The third switching valve (230) is a gate valve.

5. The silicon carbide epitaxial growth apparatus according to claim 1, characterized in that, The material transfer mechanism includes a robotic arm.

6. The silicon carbide epitaxial growth apparatus according to claim 1, characterized in that, The pressure control range of the first pressure controller (310) is at least 50 mbar to atmospheric pressure.

7. The silicon carbide epitaxial growth apparatus according to claim 1, characterized in that, The pressure control range of the second pressure controller (320) is at least 50 mbar to atmospheric pressure.

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