Unidirectional heating structure
By adopting a unidirectional heating structure in the glass greenhouse, utilizing vacuum-coated conductive film and vacuum space, unidirectional heating of the glass greenhouse is achieved, solving the problem of heat loss in the glass greenhouse, maintaining the lighting effect, and reducing the need for artificial heating.
Patent Information
- Application Number
- CN202422858511.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-22
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2034-11-22
AI Technical Summary
Glass greenhouses provide good daytime lighting in winter, but the temperature drops at night, resulting in significant heat loss. Therefore, it is necessary to reduce heat loss during artificial heating without affecting the lighting.
The structure employs a unidirectional heating structure, including a first substrate, a heating layer, an electrode, and a second substrate. The heating layer is a semiconductor oxide conductive thin film, formed by vacuum deposition. It utilizes the vacuum space to block heat propagation, thereby achieving unidirectional heating.
It effectively blocks heat from spreading from the inside to the outside, reduces heat loss, maintains the greenhouse's lighting effect, and reduces the need for artificial heating.
Smart Images
Figure CN223503052U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of greenhouse heating structure technology, and in particular to a unidirectional heating structure. Background Technology
[0002] A glass greenhouse is a type of greenhouse where glass is the primary light-transmitting covering material. Due to its excellent light transmission, glass greenhouses are increasingly used for construction. However, while they provide good daytime lighting in winter, nighttime temperatures drop, requiring artificial heating. The significant temperature difference between the inside and outside of the greenhouse causes substantial heat loss due to the glass panels. Therefore, a unidirectional heating structure is needed to block heat loss during artificial heating without affecting the greenhouse's light transmission. Utility Model Content
[0003] This utility model provides a unidirectional heating structure to solve one or more technical problems encountered in the prior art.
[0004] In a first aspect, embodiments of this utility model provide a unidirectional heating structure, comprising:
[0005] First substrate;
[0006] A heating layer is disposed on the surface of the first substrate. The heating layer is a conductive thin film formed on the surface of the first substrate by vacuum deposition of a semiconductor oxide. The heating layer is used to perform electrothermal conversion when energized.
[0007] Electrodes are disposed on both sides of the heating layer, are in contact with the heating layer, are electrically connected to a power source, and are used to energize the heating layer.
[0008] The second substrate is disposed below the first substrate, and the second substrate is spaced apart from the first substrate, and the space between the first substrate and the second substrate is sealed to form a vacuum space.
[0009] In a preferred embodiment, at least one support column is provided in the space between the first substrate and the second substrate, and the two ends of the support column are respectively connected to the first substrate and the second substrate, and the support column is used to support the first substrate and the second substrate.
[0010] In a preferred embodiment, when the heating layer is disposed on the outside of the first substrate, the unidirectional heating structure further includes an encapsulation layer, which covers the heating layer to encapsulate the heating layer, the electrode and the first substrate into a single structure.
[0011] In a preferred embodiment, the heating layer is a conductive thin film formed by vacuum deposition of one of the following: nickel-chromium alloy, silicon carbide, ZnOxS(1-x), InOxS(1-x), SnxIn(1-x)O, ZnxMg(1-x)O, and ZnxAl(1-x)O.
[0012] In a preferred embodiment, the light transmittance of the first substrate and / or the second substrate is greater than 30%.
[0013] In a preferred embodiment, the thickness of the heating layer is 10 nm to 2000 nm.
[0014] In a preferred embodiment, the first substrate and / or the second substrate are planar plates made of one of basalt, glass, elemental metal, resin and crystal.
[0015] In a preferred embodiment, the unidirectional heating structure further includes a heat-reflecting layer, which covers the inner or outer surface of the second substrate. The heat-reflecting layer is a thin film formed by vacuum deposition of gold, silver, copper, iron, or an alloy containing gold, silver, copper, and iron.
[0016] One of the above technical solutions has the following advantages or beneficial effects: the unidirectional heating structure can utilize the vacuum space between the first substrate and the second substrate to block the heat of the heating layer from the first substrate to the second substrate, thereby achieving unidirectional heating of the heating layer to the outside of the first substrate.
[0017] The above overview is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will become readily apparent from the accompanying drawings and the following detailed description. Attached Figure Description
[0018] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the various drawings denote the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings depict only some embodiments disclosed according to this utility model and should not be construed as limiting the scope of this utility model.
[0019] Figure 1 A cross-sectional schematic diagram of a unidirectional heating structure according to an embodiment of the present invention is shown.
[0020] Figure 2 A cross-sectional schematic diagram of another unidirectional heating structure according to an embodiment of the present invention is shown. Detailed Implementation
[0021] In the following description, only certain exemplary embodiments are briefly described. As those skilled in the art will recognize, the described embodiments can be modified in various ways without departing from the spirit or scope of this invention. Therefore, the drawings and description are considered exemplary in nature and not restrictive.
[0022] This utility model embodiment provides a unidirectional heating structure, see [link]. Figure 1 and Figure 2 As shown, the unidirectional heating structure includes a first substrate 100, a heating layer 300, an electrode 400, and a second substrate 200.
[0023] The heating layer 300 is disposed on the surface of the first substrate 100. The heating layer 300 is a conductive thin film formed on the surface of the first substrate 100 by vacuum deposition of semiconductor oxide. The heating layer 300 is used to perform electrothermal conversion when energized.
[0024] Electrodes 400 are disposed on both sides of the heating layer 300, are in contact with the heating layer 300, are electrically connected to the power supply, and are used to energize the heating layer 300.
[0025] The second substrate 200 is disposed below the first substrate 100, and the second substrate 200 is disposed at a distance from the first substrate 100. The space between the first substrate 100 and the second substrate 200 is sealed to form a vacuum space.
[0026] In this embodiment, the vacuum space between the first substrate 100 and the second substrate 200 blocks the heat of the heating layer 300 from the first substrate 100 to the second substrate 200, thereby achieving unidirectional heating of the heating layer 300 to the outside of the first substrate 100.
[0027] Further, see Figure 1 and Figure 2 As shown, at least one support column 500 is provided in the space between the first substrate 100 and the second substrate 200. The two ends of the support column 500 are respectively connected to the first substrate 100 and the second substrate 200. The support column 500 is used to support the first substrate 100 and the second substrate 200.
[0028] Further, see Figure 1 As shown, when the heating layer 300 is disposed on the outside of the first substrate 100, the unidirectional heating structure also includes an encapsulation layer 600, which covers the heating layer 300 so that the heating layer 300, the electrode 400 and the first substrate 100 are encapsulated into an integral structure.
[0029] In one specific embodiment, the heating layer 300 is a conductive thin film formed by vacuum deposition of one of the following: nickel-chromium alloy, silicon carbide, ZnOxS(1-x), InOxS(1-x), SnxIn(1-x)O, ZnxMg(1-x)O and ZnxAl(1-x)O.
[0030] In one specific embodiment, the light transmittance of the first substrate 100 and / or the second substrate 200 is greater than 30%.
[0031] In one specific embodiment, the thickness of the heating layer 300 is 10nm to 2000nm.
[0032] In one specific embodiment, the first substrate 100 and / or the second substrate 200 are planar plates made of one of basalt, glass, elemental metal, resin and crystal.
[0033] In one specific embodiment, see Figure 1 and Figure 2 As shown, the unidirectional heating structure also includes a heat-reflecting layer 700, which covers the inner or outer surface of the second substrate 200. The heat-reflecting layer 700 is a heat-reflecting thin film formed by vacuum deposition of gold, silver, copper, iron, or an alloy containing gold, silver, copper, and iron.
[0034] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. Furthermore, the described specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of those different embodiments or examples.
[0035] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.
[0036] The above are merely specific embodiments of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various variations or substitutions within the technical scope disclosed in this utility model, and these should all be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.
Claims
1. A unidirectional heating structure, characterized in that, include: First substrate; A heating layer is disposed on the surface of the first substrate, and the heating layer is a conductive thin film formed on the surface of the first substrate by vacuum deposition of semiconductor oxide; The heating layer is used for electrothermal conversion when energized; Electrodes are disposed on both sides of the heating layer, are in contact with the heating layer, are electrically connected to a power source, and are used to energize the heating layer. The second substrate is disposed below the first substrate, and the second substrate is spaced apart from the first substrate, and the space between the first substrate and the second substrate is sealed to form a vacuum space.
2. The unidirectional heating structure as described in claim 1, characterized in that, At least one support column is provided in the space between the first substrate and the second substrate. The two ends of the support column are respectively connected to the first substrate and the second substrate, and the support column is used to support the first substrate and the second substrate.
3. The unidirectional heating structure as described in claim 1, characterized in that, When the heating layer is disposed on the outside of the first substrate, the unidirectional heating structure further includes an encapsulation layer, which covers the heating layer to encapsulate the heating layer, the electrode and the first substrate into an integrated structure.
4. The unidirectional heating structure according to any one of claims 1-3, characterized in that, The heating layer is a conductive thin film formed by vacuum deposition of one of the following: nickel-chromium alloy, silicon carbide, ZnOxS(1-x), InOxS(1-x), SnxIn(1-x)O, ZnxMg(1-x)O, and ZnxAl(1-x)O.
5. The unidirectional heating structure as described in claim 4, characterized in that, The light transmittance of the first substrate and / or the second substrate is greater than 30%.
6. The unidirectional heating structure as described in claim 4, characterized in that, The thickness of the heating layer is 10nm to 2000nm.
7. The unidirectional heating structure as described in claim 4, characterized in that, The first substrate and / or the second substrate are flat plates made of one of basalt, glass, elemental metal, resin and crystal.
8. The unidirectional heating structure as described in claim 4, characterized in that, It also includes a heat-reflecting layer, which covers the inner or outer surface of the second substrate. The heat-reflecting layer is a thin film formed by vacuum deposition of gold, silver, copper, iron, or an alloy containing gold, silver, copper, and iron.