Single crystal furnace exhaust system and single crystal furnace
By using a parallel exhaust pipe and control valve module switching design, the problem of silicon melt leakage in the single crystal furnace was solved, achieving efficient melting and discharge of silicon melt and avoiding the risk of vacuum pump damage and system shutdown.
Patent Information
- Application Number
- CN202422885752.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-26
- Publication Date
- 2025-11-21
- Estimated Expiration
- 2034-11-26
AI Technical Summary
In the case of silicon melt leakage, the existing single crystal furnace exhaust system can easily guide the silicon melt to the exhaust system by the rapid airflow, damaging the vacuum pump and causing silicon melt to accumulate, leading to an accident.
Design a single crystal furnace exhaust system that uses parallel first and second exhaust pipes. A control valve module switches the second exhaust pipe to the connected state when silicon liquid leaks, allowing the leaked silicon liquid to be discharged through the melting section. Combined with the inclined pipe design, the flow is slowed down and the contact time is increased.
This effectively reduces the risk of molten silicon accumulating in the single crystal furnace, lowers the possibility of vacuum pump damage, and ensures stable system operation.
Smart Images
Figure CN223576652U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application belongs to the technical field of single crystal furnaces, and particularly relates to a single crystal furnace exhaust system and a single crystal furnace. BACKGROUND
[0002] At present, the exhaust system of a single crystal furnace is usually designed with a single-path stainless steel pipeline and is equipped with a water cooling module. The airflow speed in the exhaust pipeline is very fast. When silicon liquid leakage occurs in the single crystal furnace, the silicon liquid will follow the airflow into the exhaust system. Since the material of the exhaust system is stainless steel, the leaked silicon liquid is difficult to penetrate the exhaust pipeline and will be guided to the tail of the exhaust system by the fast airflow, thereby being sucked into the vacuum pump and the filter tank of the exhaust system. When a large amount of silicon liquid leaks, the silicon liquid entering the vacuum pump may damage the vacuum pump, causing the vacuum pump to stop running, and ultimately causing the silicon liquid to accumulate in the single crystal furnace, leading to an accident. CONTENT OF THE UTILITY MODEL
[0003] An object of the application is to provide a single crystal furnace exhaust system that can effectively solve the problem of silicon liquid leakage in the single crystal furnace. When silicon liquid leakage occurs, the single crystal furnace exhaust system can reduce the risk of silicon liquid accumulation in the single crystal furnace through the melting pipeline.
[0004] According to an embodiment of the application, a first aspect provides a single crystal furnace exhaust system, which comprises:
[0005] an air inlet, which is in communication with an exhaust port of the single crystal furnace;
[0006] an air outlet, which is in communication with an exhaust system;
[0007] a first exhaust pipeline, which is arranged between the air inlet and the air outlet to communicate the air inlet and the air outlet;
[0008] a second exhaust pipeline, which is arranged between the air inlet and the air outlet to communicate the air inlet and the air outlet, and is parallel to the first exhaust pipeline;
[0009] a control valve module, which is used to selectively communicate the first exhaust pipeline or the second exhaust pipeline;
[0010] wherein the air inlet is higher than the air outlet, the first exhaust pipeline at least comprises a first segment extending downwardly along the airflow direction, and the second exhaust pipeline at least comprises a third segment extending upwardly along the airflow direction, and a melting section is arranged on the third segment.
[0011] In an embodiment, the second exhaust pipeline further comprises a second section and a fifth section, the second section is connected between the gas inlet and the third section, and the fifth section is connected between the third section and the gas outlet.
[0012] In an embodiment, the second section extends vertically and is located below the gas inlet, the fifth section extends vertically and is located below the gas outlet, and the length of the second section is greater than the length of the fifth section.
[0013] In an embodiment, the melting section is arranged near the end of the third section close to the second section.
[0014] In an embodiment, the single crystal furnace exhaust system comprises a plurality of gas inlets and one gas outlet, and the number of the plurality of gas inlets corresponds to the number of exhaust outlets of the single crystal furnace.
[0015] In an embodiment, the second exhaust pipeline comprises a plurality of second sections, a plurality of third sections and one fifth section, the number of the second sections and the third sections corresponds to the number of the gas inlets, and the plurality of third sections are all communicated to the fifth section.
[0016] In an embodiment, the first exhaust pipeline comprises a plurality of first sections, the first sections are respectively communicated to the gas inlets, the first exhaust pipeline further comprises a fourth section and a sixth section, the plurality of first sections are all communicated to the fourth section, and the sixth section is connected between the fourth section and the gas outlet.
[0017] In an embodiment, the melting section is arranged as a bellows.
[0018] In an embodiment, the control valve module comprises a first control valve arranged at the gas outlet for controlling the communication between the first exhaust pipeline or the second exhaust pipeline and the gas outlet, and a second control valve arranged at the gas inlet for controlling the communication between the first exhaust pipeline or the second exhaust pipeline and the gas inlet.
[0019] According to the embodiments of the present application, a second aspect provides a single crystal furnace comprising the single crystal furnace exhaust system.
[0020] The single crystal furnace exhaust system of the present application, when silicon liquid leakage occurs in the single crystal furnace, the control valve module switches the first exhaust pipeline to the cut-off state, and simultaneously switches the second exhaust pipeline to the connected state, so that the leaked silicon liquid can be discharged through the second exhaust pipeline, thereby effectively reducing the risk of silicon liquid accumulation. The gas inlet of the single crystal furnace exhaust system is higher than the gas outlet, and the first exhaust pipeline includes a first segment extending downward along the airflow direction, thereby realizing efficient discharge of the gas discharged from the gas outlet of the single crystal furnace along the first exhaust pipeline. The second exhaust pipeline includes a third segment extending upward along the airflow direction, and a melting section is arranged in the third segment, thereby delaying the flow time of the gas and the silicon liquid in the second exhaust pipeline, increasing the contact time of the silicon liquid with the melting section, so that the silicon liquid is discharged after melting the melting section in the third segment, reducing the risk of the silicon liquid entering the exhaust system and accumulating in the single crystal furnace. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1 The structure schematic diagram of the single crystal furnace exhaust system in an embodiment of the present application is shown in the figure.
[0022] Figure 2 The structure schematic diagram of the single crystal furnace exhaust system in another embodiment of the present application is shown in the figure.
[0023] Figure 3 The structure schematic diagram of the single crystal furnace exhaust system in another embodiment of the present application is shown in the figure.
[0024] Figure 4 The structure schematic diagram of the single crystal furnace exhaust system in an embodiment of the present application is shown in the figure.
[0025] BRIEF DESCRIPTION OF DRAWINGS
[0026] 100, first exhaust pipeline; 110, gas inlet; 120, gas outlet;
[0027] 130, first segment; 140, fourth segment; 150, sixth segment;
[0028] 200, second exhaust pipeline; 210, melting section; 220, second segment; 230, third segment;
[0029] 240, fifth segment;
[0030] 300, control valve module; 310, first control valve; 320, second control valve. DETAILED DESCRIPTION
[0031] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and do not limit the present application.
[0032] It should be noted that the diagram provided in the present embodiment only illustrates the basic concept of the present application in a schematic manner.
[0033] The structure, proportion, size, etc. shown in the drawings attached to the present specification are only used to cooperate with the content disclosed in the specification, so that people skilled in the art can understand and read, and are not used to limit the implementation conditions of the present application. Any modification of structure, change of proportion relationship or adjustment of size, which does not affect the functions and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application.
[0034] The orientations or positional relationships indicated by the terms such as "upper", "lower", "left", "right", "intermediate", "vertical", "horizontal", "inner", "outer", "radial", "circumferential", etc. in the present specification are based on the orientations or positional relationships shown in the drawings, and are only used for the convenience of simplifying the description, and cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance.
[0035] As described in the background, the exhaust system of the single crystal furnace currently generally adopts a single-path stainless steel pipeline design and is equipped with a water cooling module. The airflow speed in the exhaust pipeline is very fast. When silicon liquid leakage occurs in the single crystal furnace, the silicon liquid will follow the airflow into the exhaust system. Since the material of the exhaust system is stainless steel, the leaked silicon liquid is difficult to penetrate the exhaust pipeline and will be guided to the tail of the exhaust system by the fast airflow, thereby being sucked into the vacuum pump and the filter tank of the exhaust system. When a large amount of silicon liquid leaks, the silicon liquid entering the vacuum pump can damage the vacuum pump, causing the vacuum pump to stop running, and ultimately causing the silicon liquid to accumulate in the single crystal furnace, causing an accident. In order to better solve this problem, the researchers in the present application propose a single crystal furnace exhaust system. The single crystal furnace exhaust system can effectively solve the problem of silicon liquid leakage in the single crystal furnace. When silicon liquid leakage occurs, the single crystal furnace exhaust system can reduce the risk of silicon liquid accumulation in the single crystal furnace by switching the first exhaust pipeline 100 to a closed state through the control valve module 300, while switching the second exhaust pipeline 200 to a connected state, so that the leaked silicon liquid can be discharged through the second exhaust pipeline 200, thereby effectively reducing the risk of silicon liquid accumulation.
[0036] As shown in the figure, Figure 1 is a structural schematic diagram of the single crystal furnace exhaust system in an embodiment of the present application. The single crystal furnace exhaust system comprises an air inlet 110, an air outlet 120, a first exhaust pipeline 100, a second exhaust pipeline 200 and a control valve module 300. In the present embodiment, when silicon liquid leakage occurs, the first exhaust pipeline 100 is switched to a closed state by the control valve module 300, while the second exhaust pipeline 200 is switched to a connected state, so that the leaked silicon liquid can be discharged through the second exhaust pipeline 200, thereby effectively reducing the risk of silicon liquid accumulation.
[0037] Specifically, the gas inlet 110 is in communication with the exhaust port of the single crystal furnace, and the gas outlet 120 is in communication with the exhaust system; the first exhaust pipeline 100 is arranged between the gas inlet 110 and the gas outlet 120 to connect the gas inlet 110 and the gas outlet 120; the second exhaust pipeline 200 is arranged between the gas inlet 110 and the gas outlet 120 to connect the gas inlet 110 and the gas outlet 120, and the second exhaust pipeline 200 is connected in parallel with the first exhaust pipeline 100; the control valve module 300 is used to control the selective connection of the first exhaust pipeline 100 or the second exhaust pipeline 200; wherein the gas inlet 110 of the single crystal furnace exhaust system is higher than the gas outlet 120, and the first exhaust pipeline 100 at least includes a first segment 130 extending downward along the airflow direction, and the second exhaust pipeline 200 at least includes a third segment 230 extending upward along the airflow direction, and the third segment 230 is provided with a melting section 210. The first segment 130 extending downward along the airflow direction makes the exhaust of the first exhaust pipeline 100 more smooth than that of the second exhaust pipeline 200, and the third segment 230 extending upward along the airflow direction makes the exhaust of the second exhaust pipeline 200 have resistance. In the case of silicon leakage, the first exhaust pipeline 100 is cut off, the second exhaust pipeline 200 is connected, the silicon liquid entrained in the airflow is subjected to resistance in the second exhaust pipeline 200, so that it is not easy to be sucked into the evacuation device at the tail, and the silicon liquid entrained in the airflow is also easy to gather in the second exhaust pipeline 200, so that the melting section 210 is quickly melted. It should be noted that the control valve module 300 can include multiple control valves for separately controlling the connection state and the cut-off state of the first exhaust pipeline 100 and the second exhaust pipeline 200, for example, the control valve is a one-way control valve, or it can include a multi-way reversing control valve, which can be arranged at the connection of the first exhaust pipeline 100 and the second exhaust pipeline 200, so as to control the connection state and the cut-off state of the first exhaust pipeline 100 and the second exhaust pipeline 200. The action mode of the control valve module 300 can be realized by electrical signals to realize different action controls.
[0038] In the embodiment, the single crystal furnace exhaust system adopts the parallel configuration of the first exhaust pipeline 100 and the second exhaust pipeline 200, and combines the design of the control valve module 300, to realize effective control of silicon liquid leakage. In the initial operating state, the control valve module 300 switches the first exhaust pipeline 100 to the connection state, and at the same time switches the second exhaust pipeline 200 to the cut-off state. When detecting that the silicon liquid leaks into the single crystal furnace exhaust system, the control valve module 300 switches the first exhaust pipeline 100 to the cut-off state, and at the same time switches the second exhaust pipeline 200 to the connection state, so that the leaked silicon liquid can be melted in the melting section 210 of the third segment 230 and then discharged from the second exhaust pipeline 200, thereby effectively reducing the risk of silicon liquid accumulation in the single crystal furnace.
[0039] That is, under normal circumstances, the flow path of the gas is from the gas inlet 110, then along the first exhaust pipeline 100, and finally discharged from the gas outlet 120; while in the case of leakage of silicon liquid in the single crystal furnace, the first exhaust pipeline 100 is switched to the closed state by the control valve module 300, and the second exhaust pipeline 200 is switched to the connected state by the control valve module 300, the flow path of the gas is from the gas inlet 110 to the second exhaust pipeline 200, and finally discharged from the gas outlet 120; the leaked silicon liquid in the single crystal furnace enters the second exhaust pipeline 200, and then is discharged from the melting section 210 in the third section 230.
[0040] In this embodiment, the gas inlet 110 of the single crystal furnace exhaust system is higher than the gas outlet 120, and the first exhaust pipeline 100 includes the first section 130 extending downward along the airflow direction, so that the gas discharged from the gas outlet of the single crystal furnace can be efficiently discharged along the first exhaust pipeline 100. In addition, the downward design of the first section 130 also reduces the turbulence phenomenon, and the reduction of turbulence helps to reduce the contact probability of oxygen and silicon liquid in the airflow, thereby reducing the oxygen content in the single crystal. When the leaked silicon liquid enters the second exhaust pipeline 200 along the airflow direction, because the third section 230 in the second exhaust pipeline 200 extends upward along the airflow direction, and the melting section 210 is arranged in the third section 230, the flow speed of the gas and the silicon liquid in the second exhaust pipeline 200 can be slowed down, thereby increasing the contact time of the silicon liquid with the melting section 210, so that the melting section 210 is melted and the silicon liquid is discharged. Through the design scheme in this embodiment, the risk of silicon liquid entering the exhaust system can be effectively reduced, and the possibility of silicon liquid accumulation in the single crystal furnace can be reduced.
[0041] The single crystal furnace exhaust system in this embodiment can also realize that when the first exhaust pipeline 100 leaks, the control valve module 300 can also switch the first exhaust pipeline 100 to the closed state, and at the same time switch the second exhaust pipeline 200 to the connected state, and discharge through the second exhaust pipeline 200, thereby avoiding the risk of stopping the single crystal furnace.
[0042] In an embodiment, referring to Figure 2 As shown in the figure, the second exhaust pipeline 200 further includes a second section 220 and a fifth section 240, the second section 220 is connected between the gas inlet 110 and the third section 230, and the fifth section 240 is connected between the third section 230 and the gas outlet 120.
[0043] In the present embodiment, the second exhaust pipeline 200 is connected from the air inlet 110 to the air outlet 120 by setting the second section 220 and the fifth section 240. Specifically, the second section 220 connects the air inlet 110 and the third section 230, so that the gas can smoothly enter the third section 230; the fifth section 240 connects the third section 230 and the air outlet 120, so that the gas in the third section 230 can be smoothly discharged from the air outlet 120 after entering the fifth section 240.
[0044] In an embodiment, referring to Figure 2 As shown, the second section 220 extends vertically and is located below the air inlet 110, the fifth section 240 extends vertically and is located below the air outlet 120, and the length of the second section 220 is greater than the length of the fifth section 240.
[0045] In the present embodiment, the second section 220 extends vertically downward and is located below the air inlet 110, so that the leaked silicon liquid at the air inlet 110 can quickly enter the second exhaust pipeline 200 by gravity, effectively reducing the risk of silicon liquid retention at the air inlet 110. In addition, since the second section 220 and the fifth section 240 both extend in the vertical direction and the fifth section 240 is located below the air outlet 120, and the third section 230 extends in an inclined upward direction, the third section 230 can be connected to the second section 220 and the fifth section 240 at the connection to form a corner structure. By these corner structures, the flow speed of the silicon liquid between the third section 230 and the second section 220, and the flow speed between the third section 230 and the fifth section 240 can be slowed down, and the silicon liquid entering the fifth section 240 also needs to overcome the gravity to enter the air outlet 120, thereby increasing the residence time of the silicon liquid in the third section 230 and making the silicon liquid melt the melting section 210 in the third section 230 after being discharged. In addition, the length of the second section 220 is designed to be greater than the length of the fifth section 240, which makes the third section 230 maintain an upward inclined arrangement trend after being connected to the second section 220 and the fifth section 240.
[0046] Further, in an embodiment, referring to Figure 2 As shown, the melting section 210 is arranged near the end of the third section 230 close to the second section 220.
[0047] In this embodiment, the melting section 210 is positioned near the end of the third segment 230 close to the second segment 220, so that the molten silicon leaking into the second exhaust pipe 200 quickly contacts and melts the melting section 210 of the third segment 230 after passing through the second segment 220. Specifically, since the third segment 230 extends upward along the airflow direction, the leaked molten silicon, after entering the third segment 230, will accumulate at the connection between the third segment 230 and the second segment 220 under the action of gravity, that is, accumulate near the end of the third segment 230 close to the second segment 220, thereby causing the molten silicon to quickly melt the melting section 210 located at the end of the third segment 230 after entering the third segment 230.
[0048] In one embodiment, see Figure 3 As shown, the exhaust system of the single crystal furnace includes multiple air inlets 110 and one air outlet 120, and the number of multiple air inlets 110 corresponds one-to-one with the number of exhaust outlets of the single crystal furnace.
[0049] In this embodiment, by providing multiple air inlets 110 and one air outlet 120, efficient discharge of gas and molten silicon is achieved. Specifically, each of the multiple air inlets 110 corresponds one-to-one with the exhaust port of the single crystal furnace, thereby directly receiving the gas or molten silicon discharged from each exhaust port, significantly improving exhaust efficiency compared to a single air inlet 110 design. Simultaneously, the single air outlet 120 design effectively collects the gas from the multiple air inlets 110 and establishes corresponding connectivity with the extraction system.
[0050] Furthermore, in one embodiment, see [reference] Figure 3 As shown, the second exhaust pipe 200 includes multiple second sections 220, multiple third sections 230 and a fifth section 240. The number of second sections 220 and third sections 230 corresponds one-to-one with the number of air inlets 110, and multiple third sections 230 are all connected to the fifth section 240.
[0051] In this embodiment, by setting multiple second segments 220 and multiple third segments 230, the silicon liquid leakage from each air inlet 110 can flow into the corresponding third segment 230 along the corresponding second segment 220, and the leaked silicon liquid is discharged after passing through the melting section 210 in the third segment 230. Since the multiple third segments 230 are all connected to a single fifth segment 240, the gas from the multiple third segments 230 is collected through the fifth segment 240 and discharged to the air outlet 120, while also making the entire structure more compact.
[0052] In one embodiment, see Figure 3As shown, the first exhaust pipeline 100 includes a plurality of first segments 130, each of which is in communication with the gas inlet 110. The first exhaust pipeline 100 further includes a fourth segment 140 and a sixth segment 150, and the plurality of first segments 130 are all in communication with the fourth segment 140, and the sixth segment 150 is connected between the fourth segment 140 and the gas outlet 120.
[0053] In the present embodiment, the plurality of first segments 130 are each in communication with the gas inlet 110, so that the gas discharged from each gas inlet 110 can independently enter the first exhaust pipeline 100, further improving the efficiency of the gas discharged from the exhaust port of the single crystal furnace. The plurality of first segments 130 are all in communication with the fourth segment 140, and the fourth segment 140 converges the gas from each first segment 130 and discharges the converged gas to the gas outlet 120 through the sixth segment 150.
[0054] In an embodiment, referring to Figure 1 As shown, the melting section 210 is designed as a bellows.
[0055] In the present embodiment, the melting section 210 is designed as a bellows, because the structural characteristics of the bellows provide excellent sealing performance, and the shape and material of the bellows can quickly melt when in contact with the silicon liquid.
[0056] In an embodiment, referring to Figure 4 As shown, the control valve module 300 includes a first control valve 310 and a second control valve 320, wherein the first control valve 310 is arranged at the gas outlet 120 and is used to control the communication between the first exhaust pipeline 100 or the second exhaust pipeline 200 and the gas outlet 120; and the second control valve 320 is arranged at the gas inlet 110 and is used to control the communication between the first exhaust pipeline 100 or the second exhaust pipeline 200 and the gas inlet 110.
[0057] In the present embodiment, the control valve module 300 achieves effective switching of the first exhaust pipeline 100 and the second exhaust pipeline 200 through the arrangement of the first control valve 310 and the second control valve 320. When the first exhaust pipeline 100 does not leak gas or silicon liquid, the first control valve 310 and the second control valve 320 are both switched to a state of being disconnected from the second exhaust pipeline 200, and the gas is only discharged through the first exhaust pipeline 100, thereby ensuring the normal operation of the exhaust system. When it is detected that the first exhaust pipeline 100 leaks gas or silicon liquid, the first control valve 310 and the second control valve 320 are both switched to a state of being disconnected from the first exhaust pipeline 100, and at this time, the gas or silicon liquid entering from the gas inlet 110 is only discharged through the second exhaust pipeline 200, thereby avoiding the risk of gas leakage caused by the gas entering the first exhaust pipeline 100.
[0058] The application also provides a single crystal furnace, wherein the single crystal furnace comprises the single crystal furnace exhaust system.
[0059] In the embodiment, when the silicon liquid leaks, the single crystal furnace switches to the second exhaust pipeline 200 through the single crystal furnace exhaust system, and the leaked silicon liquid is exhausted, and meanwhile, the high-efficiency exhaust of the gas and the full melting and exhaust of the silicon liquid are respectively realized by the design that the first exhaust pipeline 100 is inclined downward along the airflow direction and the structure that the second exhaust pipeline 200 is inclined upward along the airflow direction and the melting section 210, so that the risk of the silicon liquid accumulation and entering the exhaust system is effectively reduced.
[0060] The technical features of the above embodiments can be combined in any manner, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features do not exist contradictions, they should be considered as the scope of the present application.
[0061] The above embodiments only express several implementation manners of the application, the description is relatively specific and detailed, but it should not be understood as the limitation of the scope of the utility model patent. It should be pointed out that for the ordinary skilled in the art, several modifications and improvements can be made without departing from the concept of the application, and these all belong to the protection scope of the application. Therefore, the protection scope of the patent of the application should be subject to the appended claims.
Claims
1. A single crystal furnace exhaust system characterized by, The single crystal furnace exhaust system comprises: an air inlet (110) in communication with an air outlet of the single crystal furnace; an air outlet (120) in communication with an air extraction system; a first exhaust pipeline (100) arranged between the air inlet (110) and the air outlet (120) to communicate the air inlet (110) and the air outlet (120); a second exhaust pipeline (200) arranged between the air inlet (110) and the air outlet (120) to communicate the air inlet (110) and the air outlet (120), the second exhaust pipeline (200) being in parallel with the first exhaust pipeline (100); a control valve module (300) for selectively communicating the first exhaust pipeline (100) or the second exhaust pipeline (200); wherein the air inlet (110) is higher than the air outlet (120), the first exhaust pipeline (100) comprises at least a first section (130) extending downwardly along an air flow direction, and the second exhaust pipeline (200) comprises at least a third section (230) extending upwardly along the air flow direction, and a melting section (210) is arranged on the third section (230).
2. The single crystal furnace exhaust system of claim 1, wherein: The second exhaust pipeline (200) further comprises a second section (220) and a fifth section (240), the second section (220) being connected between the air inlet (110) and the third section (230), and the fifth section (240) being connected between the third section (230) and the air outlet (120).
3. The single crystal furnace exhaust system of claim 2, wherein: The second section (220) extends vertically and is located below the air inlet (110), the fifth section (240) extends vertically and is located below the air outlet (120), and the length of the second section (220) is greater than the length of the fifth section (240).
4. The single crystal furnace exhaust system of claim 3, wherein: The melting section (210) is arranged near an end of the third section (230) close to the second section (220).
5. The single crystal furnace exhaust system of claim 4, wherein: The single crystal furnace exhaust system comprises a plurality of air inlets (110) and one air outlet (120), the number of the air inlets (110) corresponding to the number of air outlets of the single crystal furnace.
6. The single crystal furnace exhaust system of claim 5, wherein: The second exhaust pipeline (200) comprises a plurality of second sections (220), a plurality of third sections (230) and one fifth section (240), the number of the second sections (220) and the third sections (230) corresponding to the number of the air inlets (110), and the plurality of third sections (230) are all communicated to the fifth section (240).
7. The single crystal furnace exhaust system of claim 5, wherein: The first exhaust pipeline (100) comprises a plurality of first sections (130), the first sections (130) being respectively communicated to the air inlets (110), the first exhaust pipeline (100) further comprises a fourth section (140) and a sixth section (150), the plurality of first sections (130) being all communicated to the fourth section (140), and the sixth section (150) being connected between the fourth section (140) and the air outlet (120).
8. The single crystal furnace exhaust system of claim 1, wherein: The melting section (210) is provided as a bellows.
9. The single crystal furnace exhaust system of claim 1, wherein: The control valve module (300) comprises: a first control valve (310) arranged at the gas outlet (120) for controlling the communication of the first exhaust pipeline (100) or the second exhaust pipeline (200) with the gas outlet (120); and a second control valve (320) arranged at the gas inlet (110) for controlling the communication of the first exhaust pipeline (100) or the second exhaust pipeline (200) with the gas inlet (110).
10. A single crystal furnace characterized by: The single crystal furnace comprises the single crystal furnace exhaust system according to any one of claims 1-9.