Thermal field device for reducing oxygen content of monocrystalline silicon

Abstract

The utility model is suitable for the technical field of monocrystalline silicon production, and provides a thermal field device for reducing the oxygen content of monocrystalline silicon. The circular opening is formed in the top of the single crystal furnace and is used for enabling a crystal bar to extend into the single crystal furnace; the sealing bearing is arranged at the bottom of the single crystal furnace; the rotary column is arranged on the sealing bearing; the crucible is fixedly arranged on the rotary column and is used for melting monocrystalline silicon; the adjustable heat shield mechanism is arranged on the inner wall of the top of the single crystal furnace and is used for reducing the oxygen content of monocrystalline silicon; and the gas replacement mechanism is arranged on the single crystal furnace and is used for replacing gas in the single crystal furnace. According to the thermal field device for reducing the oxygen content of the monocrystalline silicon, the oxygen content of the monocrystalline silicon can be reduced by replacing the gas environment in the single crystal furnace in advance and adjusting the distance between the heat shield and the liquid level of the molten monocrystalline silicon in a matched mode, the effect of reducing the oxygen content of the monocrystalline silicon is good, and the cost is low.

Description

TECHNICAL FIELD

[0001] The utility model belongs to monocrystal silicon production technical field especially relates to a heat field device of reducing monocrystal silicon oxygen content. BACKGROUND

[0002] With monocrystal silicon industry market scale rapid growth, monocrystal silicon wafer in production cost's gap narrows greatly, makes it degree electric cost and power generation efficiency become the competition point. In the Czochralski monocrystal silicon growth process, the phenomenon of high oxygen content of crystal bar often occurs, and high oxygen content will reduce the conversion efficiency of silicon wafer, seriously affect the performance of crystalline silicon and device.

[0003] The existing heat field device often reduces the oxygen content of monocrystalline silicon by magnetic field structure and optimizing the magnetic field conditions, but due to the high cost of magnetic field structure, high energy consumption and poor effect of reducing the oxygen content of monocrystalline silicon, it cannot be widely used. UTILITY MODEL CONTENT

[0004] The utility model provides a heat field device of reducing monocrystal silicon oxygen content, aims at solving the problem of poor effect of reducing monocrystal silicon oxygen content of the existing heat field device proposed in the above background technology.

[0005] To solve the above problems, the utility model is realized in this way, a heat field device of reducing monocrystal silicon oxygen content, comprising: a single crystal furnace;A circular opening is opened in the top of the single crystal furnace for the crystal bar to extend into the single crystal furnace;A sealed bearing is installed at the bottom of the single crystal furnace;A rotating column is installed on the sealed bearing;A crucible is fixedly installed on the rotating column for melting monocrystalline silicon;An adjustable heat shield mechanism is installed on the inner wall of the top of the single crystal furnace for reducing the oxygen content of monocrystalline silicon;A gas replacement mechanism is installed on the single crystal furnace for replacing the gas in the single crystal furnace.

[0006] Preferably, the bottom of the crucible is provided with a bottom heater, and an annular heater is fixedly sleeved on the crucible.

[0007] Preferably, a bottom heat preservation cylinder is arranged on the inner wall of the bottom of the single crystal furnace, and a center heat preservation cylinder and a top heat preservation cylinder are installed on the inner wall of the single crystal furnace.

[0008] Preferably, the adjustable heat shield mechanism comprises: a heat insulation sleeve pipe fixedly installed on the inner wall of the top of the single crystal furnace;A hydraulic cylinder is fixedly installed on the inner wall of the top of the heat insulation sleeve pipe;A heat shield assembly is fixedly installed on the output rod of the hydraulic cylinder.

[0009] Preferably, the gas replacement mechanism includes: an inert gas pipeline installed on the top of the single crystal furnace; an electromagnetic valve disposed on the inert gas pipeline; a negative pressure pump fixedly installed on the single crystal furnace; a negative pressure pipe installed at the inlet end of the negative pressure pump and connected to the single crystal furnace; and a one-way valve installed on the negative pressure pipe.

[0010] Preferably, a vertical plate is fixedly installed on the top of the single crystal furnace, a rotating shaft is rotatably installed on the vertical plate, a rotating plate is fixedly sleeved on the rotating shaft, and a cover plate is fixedly installed on the rotating plate.

[0011] Preferably, a stepper motor is fixedly installed on the top of the single crystal furnace, and meshing bevel gears are fixedly installed on the output shaft of the stepper motor and the rotating shaft.

[0012] Preferably, the bottom insulation cylinder has a circular clearance hole, and the position of the circular clearance hole corresponds to that of the negative pressure pipe.

[0013] Compared with related technologies, the thermal field device for reducing the oxygen content of monocrystalline silicon provided by this utility model has the following beneficial effects:

[0014] Compared with existing technologies, the thermal field device for reducing the oxygen content of monocrystalline silicon provided in this solution includes a monocrystalline furnace with a circular opening at the top to facilitate the insertion of a crystal rod, and a sealed bearing and a rotating column at the bottom. A crucible for melting monocrystalline silicon is fixed on the rotating column. In addition, an adjustable heat shield mechanism is installed on the inner wall of the top of the monocrystalline furnace to effectively reduce the oxygen content of the monocrystalline silicon. At the same time, the monocrystalline furnace is also equipped with a gas replacement mechanism to replace the air in the monocrystalline furnace with an inert gas. This design not only ensures the stability of the monocrystalline silicon melting process, but also significantly reduces the oxygen content in the monocrystalline silicon through the synergistic effect of the adjustable heat shield mechanism and the gas replacement mechanism, thereby improving the quality and performance of the monocrystalline silicon. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the main structure of a thermal field device for reducing the oxygen content of single-crystal silicon provided by this utility model;

[0016] Figure 2 for Figure 1 An enlarged structural diagram of part A shown in the figure;

[0017] Figure 3 for Figure 1 The diagram shows an enlarged view of part B.

[0018] Reference numerals: 1, single crystal furnace; 2, circular opening; 3, sealing bearing; 4, rotating column; 5, crucible; 6, bottom heater; 7, annular heater; 8, bottom heat preservation cylinder; 9, center heat preservation cylinder; 10, top heat preservation cylinder; 11, heat insulation sleeve; 12, hydraulic cylinder; 13, heat shield assembly; 14, inert gas pipeline; 15, electromagnetic air valve; 16, negative pressure pump; 17, negative pressure pipe; 18, one-way valve; 19, vertical plate; 20, rotating shaft; 21, rotating plate; 22, cover plate; 23, stepping motor; 24, bevel gear. DETAILED DESCRIPTION

[0019] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the description and claims of the application as well as the above abstract are intended to cover all alternatives, modifications, equivalents and variations of the present application falling within the scope of the application. Throughout this application the word "comprise" or variations such as "comprises" or "comprising", is not necessarily limited to the items it introduces to the extent that the items can comprise additional items. The terms "first", "second", and the like, do not denote any order, quantity, combination or important / primary / secondary / tertiary etc. distinction, but are used for the purpose of nomenclature only. The terms "inner", "outer", "left", "right", and the like, describe the orientation or position as shown in the drawings and are used for convenience in describing the present application and are not intended to mean or imply that a referred part must have a particular orientation, be constructed and operated in a particular orientation, and therefore should not be understood as limiting the present application.

[0020] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase "in an embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily all directed to the same embodiment, or to a common embodiment. Those skilled in the art will recognize, or be able to ascertain using no more than routine experimentation, many equivalents to the specific embodiments described herein. It is, therefore, to be understood that the application is not to be limited to the specific embodiments that are described, and that the scope of the application is to be defined by the claims that can be presented below.

[0021] The utility model embodiment provides a kind of heat field device for reducing oxygen content of single crystal silicon, as shown in Figures 1-3 As shown in the figure, the heat field device for reducing oxygen content of single crystal silicon includes: single crystal furnace 1;Circular opening 2 for making crystal bar extend into the inside of single crystal furnace 1 is opened in the top of the single crystal furnace 1;Sealing bearing 3 is installed in the bottom of the single crystal furnace 1;Rotating column 4 is installed on the sealing bearing 3;Crucible 5 for melting single crystal silicon is fixedly installed on the rotating column 4;Adjustable heat shield mechanism for reducing oxygen content of single crystal silicon is installed on the inner wall of the top of the single crystal furnace 1;Gas replacement mechanism for placing gas inside single crystal furnace 1 is installed on the single crystal furnace 1.

[0022] In the embodiment, the single crystal furnace 1 is provided with a circular opening 2 at the top for facilitating the extension of the crystal bar, and is provided with a sealing bearing 3 and a rotating column 4 at the bottom, and the rotating column 4 is fixed with a crucible 5 for melting single crystal silicon, in addition, an adjustable heat shield mechanism is installed on the inner wall of the top of the single crystal furnace 1 for effectively reducing the oxygen content of the single crystal silicon, and the single crystal furnace 1 is also provided with a gas replacement mechanism for replacing the air in the single crystal furnace 1 with inert gas, which not only ensures the stability of the single crystal silicon melting process, but also significantly reduces the oxygen content in the single crystal silicon through the cooperation of the adjustable heat shield mechanism and the gas replacement mechanism, thereby improving the quality and performance of the single crystal silicon.

[0023] In the further preferred embodiment of the utility model, the bottom of the crucible 5 is provided with a bottom heater 6, and the crucible 5 is fixedly provided with an annular heater 7.

[0024] In the embodiment, the single crystal silicon in the crucible 5 can be heated by the bottom heater 6 and the annular heater 7, so that the single crystal silicon is melted.

[0025] In the further preferred embodiment of the utility model, the bottom of the single crystal furnace 1 is provided with a bottom heat preservation cylinder 8, and the inner wall of the single crystal furnace 1 is provided with a center heat preservation cylinder 9 and a top heat preservation cylinder 10.

[0026] In the embodiment, the bottom heat preservation cylinder 8, the center heat preservation cylinder 9 and the top heat preservation cylinder 10 can reduce the heat flow, thereby reducing the power consumption of the high device.

[0027] In the further preferred embodiment of the utility model, the adjustable heat shield mechanism comprises: a heat insulation sleeve 11 fixedly installed on the inner wall of the top of the single crystal furnace 1, a hydraulic cylinder 12 fixedly installed on the inner wall of the top of the heat insulation sleeve 11, and a heat shield assembly 13 fixedly installed on the output rod of the hydraulic cylinder 12.

[0028] In the embodiment, the hydraulic cylinder 12 can be installed through the heat insulation sleeve 11, and the heat shield assembly 13 can be driven to move up and down through the hydraulic cylinder 12, so as to adjust the distance between the heat shield assembly 13 and the single crystal silicon melt liquid surface, and the oxygen content of the single crystal silicon can be reduced by controlling the distance between the heat shield assembly 13 and the single crystal silicon melt liquid surface.

[0029] In the further preferred embodiment of the utility model, the gas replacement mechanism comprises: an inert gas pipeline 14 installed on the top of the single crystal furnace 1, an electromagnetic gas valve 15 arranged on the inert gas pipeline 14, a negative pressure pump 16 fixedly installed on the single crystal furnace 1, a negative pressure pipe 17 installed on the gas inlet end of the negative pressure pump 16 and connected with the single crystal furnace 1, and a check valve 18 installed on the negative pressure pipe 17.

[0030] In the embodiment, the single crystal furnace 1 can be vacuumized by the negative pressure pump 16 and the negative pressure pipe 17, then the inert gas is introduced into the single crystal furnace 1 through the inert gas pipe 14 by opening the electromagnetic valve 15, so that the inert gas environment is formed in the single crystal furnace 1, thereby reducing the oxygen content of the single crystal silicon.

[0031] In the further preferable embodiment of the utility model, the vertical plate 19 is fixedly installed on the top of the single crystal furnace 1, the rotating shaft 20 is rotatably installed on the vertical plate 19, the rotating plate 21 is fixedly sleeved on the rotating shaft 20, and the cover plate 22 is fixedly installed on the rotating plate 21.

[0032] In the embodiment, the circular opening 2 can be closed by the cover plate 22, so that the single crystal furnace 1 is replaced by the inert gas by the gas replacement mechanism.

[0033] In the further preferable embodiment of the utility model, the step motor 23 is fixedly installed on the top of the single crystal furnace 1, and the bevel gears 24 that are engaged with each other are fixedly installed on the output shaft of the step motor 23 and the rotating shaft 20.

[0034] In the embodiment, the rotating shaft 20, the rotating plate 21 and the cover plate 22 can be driven to rotate by the step motor 23 and the two bevel gears 24, so that the opening and closing of the cover plate 22 are controlled.

[0035] In the further preferable embodiment of the utility model, the circular avoiding hole is formed in the bottom heat preservation cylinder 8, and the circular avoiding hole is arranged at a position corresponding to the negative pressure pipe 17.

[0036] In the embodiment, the negative pressure pipe 17 can extend to the inside of the single crystal furnace 1 through the bottom heat preservation cylinder 8 by the circular avoiding hole.

[0037] Compared with the related art, the device can reduce the oxygen content of the single crystal silicon by replacing the gas environment in the single crystal furnace in advance and adjusting the distance between the heat shield and the molten single crystal silicon liquid surface, the effect of reducing the oxygen content of the single crystal silicon is good, and the cost is low.

[0038] In the several embodiments provided in the application, it should be understood that the disclosed device can be implemented by other ways.

[0039] The above examples are only used to illustrate the technical solutions of the present application, and are not intended to limit the protection scope of the present application. Obviously, the described examples are only some of the embodiments of the present application, not all the embodiments. Based on these examples, all other embodiments obtained by those of ordinary skill in the art without creative labor fall within the scope of the present application. Although the present application has been described in detail with reference to the above examples, those of ordinary skill in the art can still combine, add or delete the features in the embodiments of the present application according to the circumstances without creative labor, so as to obtain different other technical solutions which do not deviate from the concept of the present application in essence, and these technical solutions also fall within the scope of the present application.

Claims

1. A thermal field apparatus for reducing oxygen content in single crystal silicon, characterized by comprising: The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

2. The reduced-oxygen, hot-zone apparatus for reducing the oxygen content of single crystal silicon as defined in claim 1, wherein, The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

3. The reduced-oxygen, hot-zone apparatus for growing single-crystal silicon as defined in claim 1, wherein The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

4. The reduced-oxygen, hot-zone apparatus for growing single-crystal silicon as defined in claim 1, wherein The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

5. The reduced-oxygen, hot-zone apparatus for reducing the oxygen content of single crystal silicon as defined in claim 3, wherein, The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

6. The reduced-oxygen, single-crystalline silicon thermal field device of claim 1, wherein the reduced-oxygen, single-crystalline silicon thermal field device is a reduced-oxygen, single-crystalline silicon thermal field device. The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

7. The reduced-oxygen, hot-zone apparatus for reducing the oxygen content of single crystal silicon as defined in claim 6, wherein, The utility model relates to a single crystal furnace, and relates to a single crystal furnace.

8. The reduced-oxygen, single-crystalline silicon thermal field device of claim 5, wherein the oxygen content is reduced by at least 10% as compared to a single-crystalline silicon thermal field device that is not subjected to the process of claim 1. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. The utility model relates to a single crystal furnace, and relates to a single crystal furnace. 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