High-power DFB laser chip
By designing effective heat dissipation paths and heat-conducting components in high-power DFB laser chips, the reliability problem caused by high temperatures was solved, and stable operation of the chips and improved optical efficiency were achieved.
Patent Information
- Application Number
- CN202423250632.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2034-12-27
AI Technical Summary
High-power DFB laser chips experience rapid temperature increases due to heat buildup at high power output, affecting luminous efficiency and lifespan, and potentially causing reliability issues such as material aging and thermal stress damage.
The structural design includes a first substrate, chip components, packaging layer, connecting components, and thermal conductive components. By creating through slots in the thickness direction of the substrate and using thermal conductive components to form an effective heat dissipation path, the heat dissipation performance is optimized by combining copper thermal conductive components and a temperature-sensitive color-changing layer.
It improves the heat dissipation performance of the chip, ensures the stable operation of the high-power light source chip, reduces light loss, provides temperature indication, and improves luminous efficacy and directionality.
Smart Images
Figure CN223599236U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to chip technical field, concretely is a kind of high-power DFB laser chip. BACKGROUND
[0002] Laser chip has been widely used in lighting, display, communication and other fields, such as automobile lighting, stage lighting, laser projection, etc., in the working process of high-power DFB laser chip, a large amount of heat accumulation caused by high-power output, so that the temperature of chip rises rapidly, high temperature not only reduces the luminous efficiency and service life of chip, but also may cause a series of reliability problems, such as material aging, thermal stress damage, solder joint failure, etc. SUMMARY
[0003] The utility model discloses a kind of high-power DFB laser chip, to solve the problems raised in the above background.
[0004] To achieve the above object, the utility model provides the following technical scheme:
[0005] A kind of high-power DFB laser chip, its structure includes:
[0006] First substrate, first substrate is arranged with first surface and second surface opposite to first surface arrangement;
[0007] Chip component, the first surface of first substrate supports chip component, chip component is arranged with first electrode;
[0008] Encapsulation layer, encapsulation layer is arranged on the first surface of first substrate, and covers chip component;
[0009] Connecting member, connecting member is arranged in chip component;
[0010] Supporting member, chip component is connected to the one end of supporting member by connecting member, and the other end of supporting member extends to the outside of encapsulation layer;
[0011] Conductive member, first electrode is connected to supporting member by conductive member;
[0012] Wherein, the position of first substrate corresponds with chip component, is opened with a plurality of first through-slots along the thickness direction of first substrate, first heat conduction member is arranged in first through-slot, one end of first heat conduction member contacts chip component surface, the other end contacts second heat conduction member, and second heat conduction member is arranged on second surface.
[0013] Preferably, the material of second heat conduction member is copper, and / or, the material of first heat conduction member is copper.
[0014] Preferably, first substrate is formed with first recess, and chip component is inlaid in first recess.
[0015] Preferably, the second heat-conducting member is formed with a plurality of continuous recesses away from the surface of the first substrate side.
[0016] Preferably, the side edge region of the packaging layer is arranged with a first functional part; wherein the first functional part comprises a light-shielding layer covering the side edge region of the packaging layer.
[0017] Preferably, the material of the light-shielding layer is configured as black ink.
[0018] Preferably, the first functional part further comprises a thermochromic layer arranged at the position where the support member contacts the side wall of the packaging layer.
[0019] Preferably, the side surface of the packaging layer away from the first substrate is arranged with a second functional layer, and the second functional layer processes the light emitted by the chip member.
[0020] Preferably, the second functional layer is configured as a lens.
[0021] Preferably, the second functional layer comprises a first cavity formed on the top of the packaging layer, and the inside of the first cavity is sequentially filled with a quantum dot layer and a resin layer.
[0022] Compared with the prior art, the utility model has the beneficial effects that:
[0023] The utility model discloses a high -power DFB laser chip, its structure includes first substrate, is arranged with the first surface and opposite second surface of supporting chip member on it, and the chip member is arranged with first electrode, and is covered through the packaging layer. The connection member and support member realize the connection of chip and external circuit, wherein the support member extends to the outside of the packaging layer, and the conductive member connects first electrode and support member, and the first heat-conducting member is arranged in the first through slot of first substrate along the thickness direction, and the one end of the component contacts the chip member, and the other end is connected and arranged in the second heat-conducting member of second surface, and forms effective heat dissipation path. Through increasing heat conduction area and optimizing heat dissipation path, the heat dissipation performance of chip is improved, and the stable operation of high -power light source chip is ensured. BRIEF DESCRIPTION OF DRAWINGS
[0024] Figure 1 It is the structure schematic view of light source chip in an embodiment.
[0025] Figure 2 It is the local structure schematic view of light source chip in an embodiment.
[0026] Figure 3 It is the structure schematic view of second heat-conducting member in an embodiment.
[0027] Figure 4 It is the structure schematic view of second functional layer in an embodiment. DETAILED DESCRIPTION
[0028] The technical solutions of the patent will be further described in detail below in combination with the specific embodiments.
[0029] The embodiments of the patent will be described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only, and are only used to explain the patent, and cannot be understood as a limitation on the patent.
[0030] In the description of the patent, it needs to be understood that the orientations or positional relationships indicated by the terms "middle", "bottom", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "two sides" and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the patent and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the patent.
[0031] In the description of the patent, it needs to be understood that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "assembling" should be understood broadly, for example, it can be fixedly connected, arranged, or detachably connected, arranged, or integrally connected, arranged. For those skilled in the art, the specific meanings of the above terms in the patent can be understood according to the specific circumstances.
[0032] Please refer to Figures 1 to 2 An embodiment discloses a high-power DFB laser chip, the structure of which comprises a first substrate 1, which is arranged with a first surface and a second surface arranged opposite to the first surface; the first surface of the first substrate 1 supports a chip component 2, which is arranged with a first electrode; a packaging layer 8 is arranged on the first surface of the first substrate 1 and covers the chip component; a connecting component 3 is arranged on the chip component 2; the chip component 2 is connected to one end of a supporting component 4 through the connecting component 3, and the other end of the supporting component 4 extends to the outside of the packaging layer 8; the first electrode is connected to the supporting component 4 through a conductive component 5; wherein the first substrate 1 corresponds in position to the chip component 2, a plurality of first through-slots are opened along the thickness direction of the first substrate 1, a first heat-conducting component 6 is arranged in the first through-slots, one end of the first heat-conducting component 6 contacts the surface of the chip component 2, and the other end contacts a second heat-conducting component 7, which is arranged on the second surface.
[0033] Specifically, the first substrate 1 is arranged with a first surface and a second surface opposite to the first surface, the first surface is used to support the chip component 2, and the second surface is used to arrange the second heat conducting component 7. The material of the first substrate 1 can be a silicon substrate, glass, etc. The chip component 2 is arranged on the first surface of the first substrate 1 and is used to generate light. The chip component 2 is arranged with a first electrode for connecting with an external circuit to realize input and output of current. The encapsulation layer 8 is arranged on the first surface of the first substrate 1 and covers the chip component 2. The encapsulation layer protects the chip component from external environment such as dust, moisture, chemicals, etc. In an embodiment, the material of the encapsulation layer is resin. One end of the support component 4 is connected with the chip component 2 through the connecting component 3, and the other end extends to the outside of the encapsulation layer 8. The support component provides support, and at the same time, the support component can also serve as an interface of the external circuit. The electric connection between the first electrode and the support component 4 is realized through the conductive component 5. When the chip component generates heat during work, the heat is conducted to the first substrate through the contact surface between the chip component and the first substrate. The heat is conducted to the first heat conducting component along the first through slot in the first substrate. The first heat conducting component further conducts the heat to the second heat conducting component, and finally the heat is dissipated to the external environment through the second heat conducting component. The materials of the first heat conducting component and the second heat conducting component include copper, aluminum, diamond, etc. In order to enhance the heat dissipation effect, the second heat conducting component has a large heat dissipation area and completely covers the second surface.
[0034] In an embodiment, the first substrate 1 is formed with a first recess, and the chip component 2 is embedded in the first recess. Specifically, by embedding the chip component 2 in the first recess on the first substrate, the bonding strength between the chip and the substrate is improved, which can resist various stresses and vibrations during packaging and use.
[0035] Please refer to Figure 3 The surface of the second heat conducting component 7 away from the first substrate 1 is formed with a plurality of continuous recesses 71. The recesses increase the contact area between the second heat conducting component and the external environment. In the same time, more heat can be dissipated to the external environment through the larger contact area, thereby improving the heat dissipation efficiency.
[0036] Please refer to Figure 2 In an embodiment, the side edge region of the encapsulation layer 8 is arranged with a first functional part 9. The first functional part 9 includes a light shielding layer 91 which covers the side edge region of the encapsulation layer. The light shielding layer 91 can be arranged on the side edge region of the encapsulation layer by coating, printing or pasting, etc. The light shielding layer 91 effectively shields the light leaked from the side edge of the encapsulation layer, reduces the loss and scattering of light. This makes more light propagate in the expected direction, improves the light efficiency and directivity of the light source. The light shielding material can be selected as black ink, carbon black filled polymer, etc.
[0037] Please continue to referFigure 2 In an embodiment, the first functional part 9 further comprises a temperature-sensitive color-changing layer 92, which is arranged at the position where the support member 4 contacts the side wall of the encapsulation layer 8. The temperature-sensitive color-changing layer 92 can be arranged at the position where the support member 4 contacts the side wall of the encapsulation layer 8 by coating, printing, or pasting, etc. The above-mentioned position is usually at the key node of the heat dissipation path of the chip, and the temperature-sensitive color-changing layer can accurately reflect the working temperature of the chip. When the temperature of the chip rises, the temperature-sensitive color-changing layer will change color, thereby providing intuitive temperature indication. The temperature-sensitive color-changing layer 92 can change color at different temperatures, and when the temperature reaches a certain height, the color will change, and when the temperature returns to the original state, the original color will also be restored. In an embodiment, the material of the temperature-sensitive color-changing layer is selected from heat-sensitive dyes.
[0038] In an embodiment, the side surface of the encapsulation layer 8 away from the first substrate 1 is provided with a second functional layer, which processes the light emitted by the chip member 2.
[0039] Further, the second functional layer is configured as a lens for focusing or diverging the light emitted by the chip. The second functional layer configured as a lens can be directly formed on the surface of the encapsulation layer, or can be fixed on the encapsulation layer as an independent element by adhesion or other means.
[0040] Please refer to Figure 4 In yet another embodiment, the second functional layer comprises a first cavity formed on the top of the encapsulation layer 8, and a quantum dot layer and a resin layer are sequentially filled in the first cavity. The quantum dot layer is used for color conversion or enhancement of the light emitted by the chip, and the resin layer protects and fixes the quantum dot layer. Figure 4 In the above-mentioned embodiment, A is the quantum dot layer, and B is the resin layer.
[0041] In summary, the utility model discloses a kind of high-power DFB laser chip, its structure includes first substrate, which is arranged with the first surface of supporting chip member and opposite second surface. Chip member is arranged with first electrode, and is covered by encapsulation layer. Connection member and support member realize the connection of chip and external circuit, wherein support member extends to the outside of encapsulation layer. Conductive member connects first electrode and support member, first substrate is arranged with first heat conducting member in the first through slot opened along the thickness direction, which one end contacts chip member, and the other end is connected with second heat conducting member arranged in second surface, to form effective heat dissipation path. By increasing heat conduction area and optimizing heat dissipation path, the heat dissipation performance of chip is improved, and the stable operation of high-power light source chip is ensured.
[0042] The above is only the preferred embodiment of the present application, and it should be pointed out that, for those skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which should also be considered as the protection scope of the present application, and these will not affect the effect and practicality of the present application.
Claims
1. A high power DFB laser chip, characterized in that, The application relates to a chip module, comprising: a first substrate (1) arranged with a first surface and a second surface arranged opposite to the first surface; a chip component (2) supported by the first surface of the first substrate (1), the chip component (2) being arranged with a first electrode; a packaging layer (8) arranged on the first surface of the first substrate (1) and covering the chip component; a connecting component (3) arranged on the chip component (2); a supporting component (4) connected to one end of the chip component (2) through the connecting component (3), the other end of the supporting component (4) extending to the outside of the packaging layer (8); a conductive component (5) connecting the first electrode to the supporting component (4); wherein the first substrate (1) is arranged with a plurality of first through-slots corresponding to the position of the chip component (2) along the thickness direction of the first substrate (1), the first through-slots being arranged with first heat-conducting components (6), one end of the first heat-conducting components (6) being in contact with the surface of the chip component (2) and the other end being in contact with second heat-conducting components (7), the second heat-conducting components (7) being arranged on the second surface.
2. The high power DFB laser chip of claim 1, wherein, The material of the second heat-conducting components (7) is copper, and / or the material of the first heat-conducting components (6) is copper.
3. The high power DFB laser chip of claim 1, wherein, The first substrate (1) is formed with a first recess, and the chip component (2) is embedded in the first recess.
4. The high power DFB laser chip of claim 3, wherein, The surface of the second heat-conducting component (7) away from the first substrate (1) is formed with a plurality of continuous recesses (71).
5. The high power DFB laser chip of claim 1, wherein, The side edge region of the packaging layer (8) is arranged with a first functional part (9); wherein the first functional part (9) comprises an optical shielding layer (91) covering the side edge region of the packaging layer.
6. The high power DFB laser chip of claim 5, wherein, The material of the optical shielding layer is black ink.
7. The high power DFB laser chip of claim 5, wherein, The first functional part (9) further comprises a temperature-sensitive color-changing layer (92) arranged at the position where the supporting component (4) is in contact with the side wall of the packaging layer (8).
8. The high power DFB laser chip of claim 1, wherein, The surface of the packaging layer (8) away from the first substrate (1) is arranged with a second functional layer, and the second functional layer processes the light emitted by the chip component (2).
9. The high power DFB laser chip of claim 8, wherein, The second functional layer is configured as a lens.
10. The high power DFB laser chip of claim 8, wherein, The second functional layer comprises a first cavity formed on the top of the packaging layer (8), and the first cavity is filled with a quantum dot layer and a resin layer in sequence.