Device for testing pulling speed threshold value of crystal column growth
By designing a device that includes a housing, columns, limit plates, and push rod motors, and using a control panel to simulate tensile speed testing, the complexity and resource consumption of tensile speed threshold testing in existing technologies are solved, achieving simplified and efficient tensile speed control to meet the testing needs of different materials.
Patent Information
- Application Number
- CN202423158850.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-20
- Publication Date
- 2025-12-05
- Estimated Expiration
- 2034-12-20
AI Technical Summary
Existing devices used for testing the growth rate threshold of crystal pillars suffer from model complexity and computational resource consumption, leading to difficulties in production improvement and a lack of effective testing methods.
Design a device that includes a housing, columns, limit plates, push rod motors, and a control panel. The ideal growth time is preset through the control panel, and the pull speed test is simulated using the push rod motor to precisely control the pull speed during the crystal column growth stage, thereby simplifying and optimizing the monocrystalline silicon production process.
It simplifies and optimizes the setting of the pulling speed threshold in the monocrystalline silicon production process. The test is simple and efficient, with a wide range of applications, and can meet the pulling speed threshold test requirements of different materials, thereby improving the adaptability and efficiency of production.
Smart Images
Figure CN223633512U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to monocrystalline silicon technical field, specifically, relate to a device for testing crystal column growth pulling speed threshold. BACKGROUND
[0002] When monocrystalline silicon manufacturers carry out monocrystalline silicon process improvement and research, the pulling speed of monocrystal is often estimated. Different purity materials are used for production, and the purity of silicon raw material is one of important factors that directly affect monocrystalline silicon growth process and pulling speed. Different purity silicon raw materials will affect the growth process of monocrystal, thereby leading to the need to adjust the appropriate pulling speed. The purity of silicon raw material plays an important role in the selection of pulling speed, and the physical and chemical properties of silicon raw material and the complex changes in the crystal growth process need to be fully considered to determine the most suitable pulling speed, so as to ensure the quality and growth efficiency of monocrystalline silicon.
[0003] At present, the commonly used method is to establish a mathematical model to estimate the pulling speed. The mathematical model can be constructed based on physical principles, experimental data and computer simulation, and plays an auxiliary prediction and optimization role in actual production, but the model complexity and computing resource consumption lead to production improvement, so an device for testing crystal column growth pulling speed threshold is urgently needed.
[0004] For the problems in the related art, no effective solution has been proposed so far. UTILITY MODEL CONTENT
[0005] For the problems in the related art, the purpose of the utility model is to provide a device for testing crystal column growth pulling speed threshold to overcome the above technical problems existing in the prior art.
[0006] The technical scheme of the utility model is as follows:
[0007] A device for testing crystal column growth pulling speed threshold, a box and a control panel arranged on one side of the box, comprising: the box is a hollow structure, and a plurality of groups of stand columns are fixedly arranged in the box, and a plurality of groups of the stand columns are sleeved with limit plates;
[0008] The limit plate movably penetrates a push rod motor, the top end of the push rod motor is connected with the box, and the output end of the push rod motor is connected with a load plate, and the control panel is electrically connected with the push rod motor through wires.
[0009] Further, the stand column is at least four groups, and the four groups of stand columns are vertically arranged in a circular array.
[0010] Further, the vertical height of the stand column is greater than the vertical height of the box.
[0011] Further, the load plate is located between the columns, and one side of the load plate is provided with a spacing from one side of the column.
[0012] The present application has the advantages that:
[0013] The present application has the advantages that:
[0014] The present application has the advantages that:
[0015] In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the following preferred embodiments are described in detail, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS
[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained from these drawings without any creative labor.
[0017] Fig. 1 is a structural schematic diagram of a device for testing crystal column growth pulling speed threshold according to the embodiments of the present application;
[0018] Fig. 2 is a limiting plate schematic diagram of a device for testing crystal column growth pulling speed threshold according to the embodiments of the present application.
[0019] In the drawings:
[0020] 1, box; 2, control panel; 3, column; 4, limiting plate; 5, push rod motor; 6, load plate. DETAILED DESCRIPTION
[0021] With reference to the accompanying drawings, the technical solutions in the embodiments of the present application will be clearly and completely described below, obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art belong to the scope of protection of the present application.
[0022] According to the embodiments of the present application, a device for testing crystal column growth pulling speed threshold is provided.
[0023] As shown in the drawings, Figs. 1-2 A device for testing crystal column growth pulling speed threshold, comprising: a box body 1 and a control panel 2 arranged on one side of the box body 1, comprising: the box body 1 is a hollow structure, and a plurality of groups of stand columns 3 are fixedly arranged in the box body 1, and the plurality of groups of stand columns 3 are sleeved with a limiting plate 4;
[0024] A push rod motor 5 is movably inserted into the limiting plate 4, the top end of the push rod motor 5 is connected with the box body 1, and the output end of the push rod motor 5 is connected with a load plate 6, and the control panel 2 is electrically connected with the push rod motor 5 through wires.
[0025] In addition, the stand columns 3 are at least four groups, and the four groups of stand columns 3 are arranged in a vertical annular array. Among them, the vertical height of the stand column 3 is greater than the vertical height of the box body 1. Among them, the load plate 6 is located between the stand columns 3, and a distance is arranged between one side of the load plate 6 and one side of the stand column 3.
[0026] By means of the above-mentioned scheme, the materials required to be put in during production activities are put into the load plate 6 according to a fixed proportion, the ideal growth time is preset by the control panel 2, and the push rod motor 5 is started to perform pulling speed simulation test, the push rod motor 5 lifts the load plate 6 and the materials placed in the load plate 6 upwards; at the same time, according to the pulling speed threshold fed back by the control panel 2, the pulling speed of the crystal column in the growth stage is limited according to the fixed proportion in the actual production, so as to accurately control the pulling speed of the crystal column in the growth stage, realize the simplification and optimization of the setting of the pulling speed threshold in the single crystal silicon production process, and test conveniently and efficiently, and at the same time, the range is wide, and the pulling speed threshold test of different materials can be met.
[0027] In addition, for the above-mentioned push rod motor 5, specifically, the LITMUS LT2 series can be adopted, and the accuracy is within 0.1-0.5 millimeters.
[0028] In addition, it needs to be particularly pointed out that the ideal growth time of the crystal column in the constant diameter stage is determined according to experimental data. This device is used to cooperate with the self-developed crystal growing furnace, so the ideal growth time used here is also the experimental data recorded in the actual production, so it can be preset.
[0029] According to the above technical scheme of the utility model, the following effects can be realized: the materials needed in the production activities are put into the load plate 6 according to the fixed proportion in advance, the ideal growth time is preset through the control panel 2, the push rod motor 5 is started to carry out the pulling speed simulation test, the push rod motor 5 lifts the load plate 6 and the materials placed in the load plate 6 upwards; meanwhile, the required pulling speed threshold value is fed back according to the control panel 2, which is used to limit the pulling speed of the crystal column in the growth stage in the actual production according to the fixed proportion, so that the pulling speed of the crystal column in the growth stage is accurately controlled, the setting of the pulling speed threshold value in the single crystal silicon production process is simplified and optimized, the test is simple and efficient, meanwhile, the range is wide, and the pulling speed threshold value test of different materials can be met.
[0030] The above is only the preferred embodiment of the utility model, and is not used to limit the utility model, and any modification, equivalent replacement, improvement and the like made within the spirit and principle of the utility model should be included in the protection range of the utility model.
Claims
1. A device for testing the growth rate threshold of a crystal column, a box (1) and a control panel (2) arranged on one side of the box (1), characterized in that, Include: The box (1) is a hollow structure, and a plurality of groups of stand columns (3) are fixedly arranged in the box (1), and a plurality of groups of the stand columns (3) are sleeved with limiting plates (4); The push rod motor (5) is movably inserted into the limiting plate (4), the top end of the push rod motor (5) is connected with the box (1), and the output end of the push rod motor (5) is connected with a load plate (6), and the control panel (2) is electrically connected with the push rod motor (5) through wires.
2. A device for testing a growth rate threshold for crystal column growth according to claim 1, wherein, The stand column (3) is at least four groups, and four groups of the stand column (3) are arranged in vertical annular array.
3. A device for testing a growth rate threshold for crystal column growth as defined in claim 2, wherein, The vertical height of the stand column (3) is greater than the vertical height of the box (1).
4. The apparatus for testing a growth rate threshold of a crystal pillar according to claim 1, wherein, The load plate (6) is located between the stand columns (3), and one side of the load plate (6) is provided with a spacing from one side of the stand column (3).