Three-phase rectifier with low ripple and wide output voltage range
By combining a Y-type rectifier module and an interleaved parallel Boost module, the problem of traditional three-phase rectifiers being unable to achieve low ripple and a wide output voltage range is solved, resulting in a safer and more stable wide voltage output while reducing costs and losses.
Patent Information
- Application Number
- CN202422813945.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-18
- Publication Date
- 2025-12-09
- Estimated Expiration
- 2034-11-18
AI Technical Summary
Traditional three-phase rectifiers cannot achieve low ripple output and a wide output voltage range, and adjusting the output voltage range increases costs and losses.
A combination structure of Y-type rectifier module and interleaved parallel Boost module is adopted, combined with MOSFET control module and Boost control module, to achieve wide voltage range output, and voltage ripple is reduced by interleaved parallel Boost module.
It achieves a wider range of output voltages, smoother output waveforms, lower ripple, greater safety and stability, and reduced costs and losses.
Smart Images
Figure CN223652162U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to rectifier technical field, concretely relates to a low ripple and wide output voltage range's three -phase rectifier. TECHNICAL BACKGROUND
[0002] Current fuel cell industry, electric automobile lithium battery industry develop rapidly, along with it is for the requirement of rectifier also more and more high, rectifier is a kind of based on power electronic switching device converts alternating current into direct current device.The commonly used three-phase voltage source rectifier structure currently has: uncontrollable bridge rectifier, half-controlled bridge rectifier, fully-controlled bridge rectifier.For electric automobile field, electric automobile charger should have efficient output power and wide dc output voltage range, to be compatible with the voltage level of various nominal batteries.The traditional three-phase rectifier has the advantages of simple structure, transistor control method is easy, low cost, but also has the shortcomings of narrow output voltage range, big output dc voltage ripple, if want to realize wide range voltage output, usually need to change the size of output dc voltage by adjusting the size of alternating voltage, if want to realize low ripple output, can only be realized by increasing filter inductance, but in this way, will certainly increase cost and loss.
[0003] In order to solve the above problems, the utility model provides a kind of low ripple and wide output voltage range's three -phase rectifier based on Y type rectifier. UTILITY MODEL CONTENT
[0004] The utility model aims at providing a kind of low ripple and wide output voltage range's three -phase rectifier to solve the problems that traditional three-phase fully-controlled rectifier cannot realize low ripple output and wide output voltage range.
[0005] The utility model discloses adopt technical scheme for: a kind of low ripple and wide output voltage range's three-phase rectifier, including AC voltage source module, Y-type rectification module, staggered parallel Boost module, MOSFET control module, Boost control module, load;Its characterized in that: AC voltage source output is connected with Y-type rectification module input, MOSFET control module output is connected with Y-type rectification module input, Y-type rectification module output is connected with staggered parallel Boost module input, staggered parallel Boost module output is connected with load, Boost control module output is connected with staggered parallel Boost module input;The AC voltage source includes voltage source Va, voltage source Vb, voltage source Vc;The Y-type rectification module includes crystal switch tube T1, crystal switch tube T2, crystal switch tube T3, crystal switch tube T4, crystal switch tube T5, crystal switch tube T6, crystal switch tube T7, crystal switch tube T8, crystal switch tube T9, crystal switch tube T10, crystal switch tube T11, crystal switch tube T12, diode D1, diode D2, diode D3, diode D4, diode D5, diode D6, diode D7, diode D8, diode D9, diode D10, diode D11, diode D12, inductance L1, inductance L2, inductance L3, capacitor C1, capacitor C2, capacitor C3, capacitor C4;The staggered parallel Boost module includes inductance L4, inductance L5, crystal switch tube T13, crystal switch tube T14, diode D13, diode D14, diode D15, diode D16, capacitor C5.
[0006] In the AC voltage source, voltage source Va, voltage source Vb, voltage source Vc are symmetrical three-phase voltage sources, the amplitude, frequency are equal, voltage source Va phase is ahead of voltage source Vb 120 °, voltage source Vb phase is ahead of voltage source Vc 120 °;Voltage source Va, voltage source Vb, voltage source Vc adopt the connection of star neutral point grounding, the anode of voltage source Va is connected with the drain electrode of crystal switch tube T1 and the anode of capacitor C1, the anode of voltage source Vb is connected with the drain electrode of crystal switch tube T5 and the anode of capacitor C2, the anode of voltage source Vc is connected with the drain electrode of crystal switch tube T9 and the anode of capacitor C3.
[0007] The MOSFET control module outputs 12 control signals, and the output interfaces are MOS tube T1, MOS tube T2, MOS tube T3, MOS tube T4, MOS tube T5, MOS tube T6, MOS tube T7, MOS tube T8, MOS tube T9, MOS tube T10, MOS tube T11 and MOS tube T12.
[0008] The Y-type rectifier module, the gate of the transistor switch T1 is connected with the T1 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Va and the cathode of the diode D1, the source is connected with the anode of the diode D1 and the positive pole of the inductor L1, the gate of the transistor switch T2 is connected with the T2 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D2 and the positive pole of the inductor L1, the source is connected with the anode of the diode D2 and the negative pole of the capacitor C1, the gate of the transistor switch T5 is connected with the T5 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Vb and the cathode of the diode D5, the source is connected with the anode of the diode D5 and the positive pole of the inductor L2, the gate of the transistor switch T6 is connected with the T6 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D6 and the positive pole of the inductor L2, the source is connected with the anode of the diode D6 and the negative pole of the capacitor C1, the gate of the transistor switch T9 is connected with the T9 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Vc and the cathode of the diode D9, the source is connected with the anode of the diode D9 and the positive pole of the inductor L3, the gate of the transistor switch T10 is connected with the T10 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D10 and the positive pole of the inductor L3, the source is connected with the anode of the diode D10 and the negative pole of the capacitor C1, the gate of the transistor switch T3 is connected with the T3 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D3 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D3 and the negative pole of the inductor L1, the gate of the transistor switch T4 is connected with the T4 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D4 and the negative pole of the inductor L1, the source is connected with the anode of the diode D4 and the negative pole of the capacitor C1, the gate of the transistor switch T7 is connected with the T7 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D7 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D7 and the negative pole of the inductor L2, the gate of the transistor switch T8 is connected with the T8 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D8 and the negative pole of the inductor L2, the source is connected with the anode of the diode D8 and the negative pole of the capacitor C1, the gate of the transistor switch T11 is connected with the T11 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D11 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D11 and the negative pole of the inductor L3, the gate of the transistor switch T12 is connected with the T12 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D12 and the negative pole of the inductor L3, the source is connected with the anode of the diode D12 and the negative pole of the capacitor C1, the positive pole of the capacitor C1 is connected with the positive pole of the voltage source Va, the positive pole of the capacitor C2 is connected with the positive pole of the voltage source Vb, the negative pole is connected with the negative pole of the capacitor C1, the positive pole of the capacitor C3 is connected with the positive pole of the voltage source Vc, the negative pole is connected with the negative pole of the capacitor C1, the negative pole of the capacitor C4 is connected with the negative pole of the capacitor C1.
[0009] The Boost control module outputs two control signals, and the output interfaces are MOS transistor T13 and MOS transistor T14.
[0010] In the interleaved parallel Boost module, the positive pole of the inductor L4 is connected with the positive pole of the capacitor C4, the negative pole is connected with the anode of the diode D15, the cathode of the diode D15 is connected with the positive pole of the capacitor C5, the gate of the crystal switching tube T13 is connected with the T13 output interface of the Boost control module, the drain is connected with the cathode of the diode D13 and the negative pole of the inductor L4, the source is connected with the anode of the diode D13 and the negative pole of the capacitor C4 and the negative pole of the capacitor C5, the positive pole of the inductor L5 is connected with the positive pole of the capacitor C4, the negative pole is connected with the anode of the diode D16, the cathode of the diode D16 is connected with the positive pole of the capacitor C5, the gate of the crystal switching tube T14 is connected with the T14 output interface of the Boost control module, the drain is connected with the cathode of the diode D14 and the negative pole of the inductor L5, the source is connected with the anode of the diode D14 and the negative pole of the capacitor C4 and the negative pole of the capacitor C5, the positive pole of the load is connected with the positive pole of the capacitor C5, and the negative pole of the load is connected with the negative pole of the capacitor C5.
[0011] The low-ripple and wide-output-voltage-range three-phase rectifier has the advantages that: firstly, in the rectifier bridge part, a Y-type connection method different from the traditional rectifier bridge is applied; secondly, an interleaved parallel Boost converter is additionally arranged at the rectifier bridge output part, so that the rectifier can realize low-ripple wide-voltage-range output.
[0012] In order to more clearly illustrate the low-ripple and wide-output-voltage-range three-phase rectifier, the low-ripple and wide-output-voltage-range three-phase rectifier is further described in detail below in combination with the drawings and the specific embodiments. BRIEF DESCRIPTION OF DRAWINGS
[0013] In order to more clearly illustrate the low-ripple and wide-output-voltage-range three-phase rectifier, the low-ripple and wide-output-voltage-range three-phase rectifier is further described in detail below in combination with the drawings and the specific embodiments.
[0014] Figure 1 It is a circuit structure diagram of the low-ripple and wide-output-voltage-range three-phase rectifier.
[0015] Figure 2 It is a buck-boost module of the a-phase in the rectifier.
[0016] Figure 3 It is a working mode when the output voltage is higher than the input voltage.
[0017] Figure 4 For the working mode when the output voltage is lower than the input voltage.
[0018] Figure 5 For the four working states of the interleaved parallel Boost module in one switching period T. DETAILED DESCRIPTION
[0019] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. It should be noted that the embodiments described herein are only part of the embodiments of the utility model, rather than all the implementation manners of the utility model. The embodiments are only exemplary.
[0020] Figure 1 The circuit structure diagram of the three-phase rectifier with low ripple and wide output voltage range is shown. The specific structure is as follows: it comprises an AC voltage source module, a Y-type rectifier module, an interleaved parallel Boost module, a MOSFET control module, a Boost control module and a load. The AC voltage source output is connected with the input of the Y-type rectifier module, the MOSFET control module output is connected with the input of the Y-type rectifier module, the Y-type rectifier module output is connected with the input of the interleaved parallel Boost module, the Boost control module is connected with the input of the interleaved parallel Boost, and the interleaved parallel Boost module output is connected with the load. The AC voltage source comprises a voltage source Va, a voltage source Vb and a voltage source Vc. The Y-type rectifier module comprises a crystal switch tube T1, a crystal switch tube T2, a crystal switch tube T3, a crystal switch tube T4, a crystal switch tube T5, a crystal switch tube T6, a crystal switch tube T7, a crystal switch tube T8, a crystal switch tube T9, a crystal switch tube T10, a crystal switch tube T11, a crystal switch tube T12, a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a diode D10, a diode D11, a diode D12, an inductor L1, an inductor L2, an inductor L3, a capacitor C1, a capacitor C2, a capacitor C3 and a capacitor C4. The interleaved parallel Boost module comprises an inductor L4, an inductor L5, a crystal switch tube T13, a crystal switch tube T14, a diode D13, a diode D14, a diode D15, a diode D16 and a capacitor C5.
[0021] The AC voltage source, the voltage source Va, the voltage source Vb, the voltage source Vc are symmetrical three-phase voltage sources, the amplitude and the frequency are equal, the voltage source Va phase is ahead of the voltage source Vb 120°, the voltage source Vb phase is ahead of the voltage source Vc 120°; the voltage source Va, the voltage source Vb, the voltage source Vc adopt the star neutral point grounding connection, the positive pole of the voltage source Va is connected with the drain of the crystal switch tube T1 and the positive pole of the capacitor C1, the positive pole of the voltage source Vb is connected with the drain of the crystal switch tube T5 and the positive pole of the capacitor C2, the positive pole of the voltage source Vc is connected with the drain of the crystal switch tube T9 and the positive pole of the capacitor C3.
[0022] The MOSFET control module outputs 12 control signals, and the output interfaces are MOS T1, MOS T2, MOS T3, MOS T4, MOS T5, MOS T6, MOS T7, MOS T8, MOS T9, MOS T10, MOS T11 and MOS T12 respectively.
[0023] The Y-type rectifier module, the gate of the transistor switch T1 is connected with the T1 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Va and the cathode of the diode D1, the source is connected with the anode of the diode D1 and the positive pole of the inductor L1, the gate of the transistor switch T2 is connected with the T2 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D2 and the positive pole of the inductor L1, the source is connected with the anode of the diode D2 and the negative pole of the capacitor C1, the gate of the transistor switch T5 is connected with the T5 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Vb and the cathode of the diode D5, the source is connected with the anode of the diode D5 and the positive pole of the inductor L2, the gate of the transistor switch T6 is connected with the T6 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D6 and the positive pole of the inductor L2, the source is connected with the anode of the diode D6 and the negative pole of the capacitor C1, the gate of the transistor switch T9 is connected with the T9 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Vc and the cathode of the diode D9, the source is connected with the anode of the diode D9 and the positive pole of the inductor L3, the gate of the transistor switch T10 is connected with the T10 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D10 and the positive pole of the inductor L3, the source is connected with the anode of the diode D10 and the negative pole of the capacitor C1, the gate of the transistor switch T3 is connected with the T3 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D3 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D3 and the negative pole of the inductor L1, the gate of the transistor switch T4 is connected with the T4 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D4 and the negative pole of the inductor L1, the source is connected with the anode of the diode D4 and the negative pole of the capacitor C1, the gate of the transistor switch T7 is connected with the T7 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D7 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D7 and the negative pole of the inductor L2, the gate of the transistor switch T8 is connected with the T8 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D8 and the negative pole of the inductor L2, the source is connected with the anode of the diode D8 and the negative pole of the capacitor C1, the gate of the transistor switch T11 is connected with the T11 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D11 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D11 and the negative pole of the inductor L3, the gate of the transistor switch T12 is connected with the T12 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D12 and the negative pole of the inductor L3, the source is connected with the anode of the diode D12 and the negative pole of the capacitor C1, the positive pole of the capacitor C1 is connected with the positive pole of the voltage source Va, the positive pole of the capacitor C2 is connected with the positive pole of the voltage source Vb, the negative pole is connected with the negative pole of the capacitor C1, the positive pole of the capacitor C3 is connected with the positive pole of the voltage source Vc, the negative pole is connected with the negative pole of the capacitor C1, the negative pole of the capacitor C4 is connected with the negative pole of the capacitor C1.
[0024] The Boost control module outputs two control signals, and the output interfaces are MOS transistor T13 and MOS transistor T14.
[0025] In the interleaved parallel Boost module, the positive pole of the inductor L4 is connected with the positive pole of the capacitor C4, the negative pole is connected with the anode of the diode D15, the cathode of the diode D15 is connected with the positive pole of the capacitor C5, the gate of the transistor T13 is connected with the T13 output interface of the Boost control module, the drain is connected with the cathode of the diode D13 and the negative pole of the inductor L4, the source is connected with the anode of the diode D13 and the negative pole of the capacitor C4 and the negative pole of the capacitor C5, the positive pole of the inductor L5 is connected with the positive pole of the capacitor C4, the negative pole is connected with the anode of the diode D16, the cathode of the diode D16 is connected with the positive pole of the capacitor C5, the gate of the transistor T14 is connected with the T14 output interface of the Boost control module, the drain is connected with the cathode of the diode D14 and the negative pole of the inductor L5, the source is connected with the anode of the diode D14 and the negative pole of the capacitor C4 and the negative pole of the capacitor C5, the positive pole of the load is connected with the positive pole of the capacitor C5, and the negative pole of the load is connected with the negative pole of the capacitor C5.
[0026] Next, please refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 The Y-type rectifier bridge structure of the utility model is different from the traditional IGBT three-phase full-control bridge type voltage source rectifier, and the utility model adds 6 groups of MOSFET transistors and 6 groups of corresponding freewheeling diodes to the rectifier bridge to realize the wide voltage output range. Figure 2 The three modules are independently controlled, which means that the control strategy of the three phases is relatively simple. Figure 3 When the transistor T3 is kept on and the transistor T4 is kept off, the output voltage is higher than the input voltage. Figure 4 When the transistor T3 is kept on and the transistor T4 is kept off, the output voltage is higher than the input voltage.
[0027] After the rectification process, the output of the Y-type full-bridge rectification module is approximately a direct current voltage. The output voltage is the input voltage of the interleaved parallel Boost module. The interleaved parallel Boost module is formed by two-phase Boost circuits in parallel, and the inductances L4 and L5 of the two-phase bridge arms are the same, the duty cycles of the two phases are equal, and the phases of the Boost control module driving signals are 180 degrees apart. Figure 5 The four working states of the interleaved parallel Boost module in one switching period T are as follows. State 1: transistors T13 and T14 are both turned on, the inductances L4 and L5 are charged, and the current linearly increases. In this state, the load is powered by the capacitor C5. State 2: transistor T13 is turned on to charge the inductance L4, the current continuously increases, transistor T14 is turned off, the inductance L5 is discharged, and the current linearly decreases. In this state, the load is powered by the branch in which the inductance L5 is located. State 3: transistors T13 and T14 are both turned on, the inductances L4 and L5 are charged, and the current linearly increases. In this state, the load is powered by the capacitor C5. State 4: transistor T14 is turned on to charge the inductance L5, the current continuously increases, transistor T13 is turned off, the inductance L4 is discharged, and the current linearly decreases. In this state, the load is powered by the branch in which the inductance L4 is located. The input current of the interleaved parallel Boost module is the sum of the inductance L4 current and the inductance L5 current. In this way, the current ripples of the inductances L4 and L5 are superimposed together, the input current ripple of the interleaved parallel Boost module is reduced, the voltage ripple is also reduced, the waveform is smoother, and the impact on the electric vehicle battery is smaller.
[0028] The above only describes preferred embodiments of the present application, but is not intended to limit the present application. Various modifications and changes can be made by those skilled in the art without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application should be defined by the claims.
Claims
1. A three-phase rectifier with low ripple and wide output voltage range, comprising an AC voltage source module, a Y-type rectifier module, an interleaved parallel Boost module, a MOSFET control module, a Boost control module, a load; characterized in that: The AC voltage source output is connected with the Y-type rectifier module input, the MOSFET control module output is connected with the Y-type rectifier module input, the Y-type rectifier module output is connected with the interleaved parallel Boost module input, the Boost control module is connected with the interleaved parallel Boost module input, and the interleaved parallel Boost module output is connected with the load; the AC voltage source comprises a voltage source Va, a voltage source Vb and a voltage source Vc; the Y-type rectifier module comprises a crystal switch tube T1, a crystal switch tube T2, a crystal switch tube T3, a crystal switch tube T4, a crystal switch tube T5, a crystal switch tube T6, a crystal switch tube T7, a crystal switch tube T8, a crystal switch tube T9, a crystal switch tube T10, a crystal switch tube T11, a crystal switch tube T12, a diode D1, a diode D2, a diode D3, a diode D4, a diode D5, a diode D6, a diode D7, a diode D8, a diode D9, a diode D10, a diode D11, a diode D12, an inductor L1, an inductor L2, an inductor L3, a capacitor C1, a capacitor C2, a capacitor C3 and a capacitor C4; the interleaved parallel Boost module comprises an inductor L4, an inductor L5, a crystal switch tube T13, a crystal switch tube T14, a diode D13, a diode D14, a diode D15, a diode D16 and a capacitor C5.
2. A low-ripple and wide output voltage range three-phase rectifier as claimed in claim 1, characterized in that: In the AC voltage source, the voltage source Va, the voltage source Vb and the voltage source Vc are symmetrical three-phase voltage sources with equal amplitude and frequency, the voltage source Va is 120° ahead of the voltage source Vb in phase, and the voltage source Vb is 120° ahead of the voltage source Vc in phase; the voltage source Va, the voltage source Vb and the voltage source Vc adopt a star neutral point grounding connection mode, the positive electrode of the voltage source Va is connected with the drain electrode of the crystal switch tube T1 and the positive electrode of the capacitor C1, the positive electrode of the voltage source Vb is connected with the drain electrode of the crystal switch tube T5 and the positive electrode of the capacitor C2, and the positive electrode of the voltage source Vc is connected with the drain electrode of the crystal switch tube T9 and the positive electrode of the capacitor C3.
3. A low-ripple and wide output voltage range three-phase rectifier as claimed in claim 1, characterized in that: The MOSFET control module outputs 12 control signals, and the output interfaces are MOS tubes T1, T2, T3, T4, T5, T6, T7, T8, T9, T10, T11 and T12; the Boost control module outputs 2 control signals, and the output interfaces are MOS tubes T13 and T14.
4. A low-ripple and wide output voltage range three-phase rectifier as claimed in claim 1, characterized in that: The Y-type rectifier module, the gate of the transistor switch T1 is connected with the T1 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Va and the cathode of the diode D1, the source is connected with the anode of the diode D1 and the positive pole of the inductor L1, the gate of the transistor switch T2 is connected with the T2 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D2 and the positive pole of the inductor L1, the source is connected with the anode of the diode D2 and the negative pole of the capacitor C1, the gate of the transistor switch T5 is connected with the T5 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Vb and the cathode of the diode D5, the source is connected with the anode of the diode D5 and the positive pole of the inductor L2, the gate of the transistor switch T6 is connected with the T6 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D6 and the positive pole of the inductor L2, the source is connected with the anode of the diode D6 and the negative pole of the capacitor C1, the gate of the transistor switch T9 is connected with the T9 output interface of the MOSFET control module, the drain is connected with the positive pole of the voltage source Vc and the cathode of the diode D9, the source is connected with the anode of the diode D9 and the positive pole of the inductor L3, the gate of the transistor switch T10 is connected with the T10 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D10 and the positive pole of the inductor L3, the source is connected with the anode of the diode D10 and the negative pole of the capacitor C1, the gate of the transistor switch T3 is connected with the T3 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D3 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D3 and the negative pole of the inductor L1, the gate of the transistor switch T4 is connected with the T4 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D4 and the negative pole of the inductor L1, the source is connected with the anode of the diode D4 and the negative pole of the capacitor C1, the gate of the transistor switch T7 is connected with the T7 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D7 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D7 and the negative pole of the inductor L2, the gate of the transistor switch T8 is connected with the T8 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D8 and the negative pole of the inductor L2, the source is connected with the anode of the diode D8 and the negative pole of the capacitor C1, the gate of the transistor switch T11 is connected with the T11 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D11 and the positive pole of the capacitor C4, the source is connected with the anode of the diode D11 and the negative pole of the inductor L3, the gate of the transistor switch T12 is connected with the T12 output interface of the MOSFET control module, the drain is connected with the cathode of the diode D12 and the negative pole of the inductor L3, the source is connected with the anode of the diode D12 and the negative pole of the capacitor C1, the positive pole of the capacitor C1 is connected with the positive pole of the voltage source Va, the positive pole of the capacitor C2 is connected with the positive pole of the voltage source Vb, the negative pole is connected with the negative pole of the capacitor C1, the positive pole of the capacitor C3 is connected with the positive pole of the voltage source Vc, the negative pole is connected with the negative pole of the capacitor C1, the negative pole of the capacitor C4 is connected with the negative pole of the capacitor C1.
5. A low ripple and wide output voltage range three-phase rectifier as claimed in claim 1 characterized by: In the interleaved parallel Boost module, the positive pole of the inductor L4 is connected with the positive pole of the capacitor C4, the negative pole is connected with the anode of the diode D15, the cathode of the diode D15 is connected with the positive pole of the capacitor C5, the gate of the crystal switch tube T13 is connected with the T13 output interface of the Boost control module, the drain is connected with the cathode of the diode D13 and the negative pole of the inductor L4, the source is connected with the anode of the diode D13 and the negative pole of the capacitor C4 and the negative pole of the capacitor C5, the positive pole of the inductor L5 is connected with the positive pole of the capacitor C4, the negative pole is connected with the anode of the diode D16, the cathode of the diode D16 is connected with the positive pole of the capacitor C5, the gate of the crystal switch tube T14 is connected with the T14 output interface of the Boost control module, the drain is connected with the cathode of the diode D14 and the negative pole of the inductor L5, the source is connected with the anode of the diode D14 and the negative pole of the capacitor C4 and the negative pole of the capacitor C5, the positive pole of the load is connected with the positive pole of the capacitor C5, and the negative pole of the load is connected with the negative pole of the capacitor C5.