Distribution device and semiconductor production equipment
By designing distribution and temperature control devices in semiconductor manufacturing equipment, the problem of uneven gas distribution during processing was solved, achieving uniform gas distribution within the processing chamber and high-quality semiconductor processing.
Patent Information
- Application Number
- CN202423322140.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-12-26
- Estimated Expiration
- 2034-12-31
AI Technical Summary
In existing semiconductor manufacturing equipment, the uniformity of the distribution of processing gas within the processing chamber is insufficient, especially at the edges, which is difficult to optimize and affects the processing quality of semiconductors.
Design a distribution device, including a main structure and a pipeline mechanism. By setting multiple opening groups, distribution components and valve bodies, it can flexibly control the distribution of processing gas in the processing chamber. By using the gas mixing chamber and combining it with a temperature control device for zoned adjustment, it can meet different processing needs.
It achieves uniform distribution of processing gas within the processing chamber, improves the processing quality of semiconductors, and adapts to diverse processing needs.
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Figure CN223728722U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to, but is not limited to, the field of processing equipment, and in particular to a distribution device and a semiconductor production equipment. BACKGROUND
[0002] The semiconductor production equipment generates plasma etching of the semiconductor by introducing processing gas into the processing chamber under the action of an electric field. In the related art, the uniformity of the distribution of the processing gas in the processing chamber is insufficient, which affects the processing of the semiconductor. CONTENT OF THE INVENTION
[0003] To solve the above technical problems, the present application provides a distribution device and a semiconductor production equipment. The present application is implemented by the following technical solutions:
[0004] In a first aspect, the present application provides a distribution device arranged in a semiconductor production equipment, the semiconductor production equipment comprising a processing chamber, the distribution device comprising a main body structure and a pipeline mechanism, the main body structure comprising a plurality of opening groups, each opening group comprising a plurality of first openings communicating with the processing chamber; the pipeline mechanism being configured to communicate with a gas flow source, the pipeline mechanism comprising a distribution assembly arranged corresponding to each opening group, the distribution assembly comprising a plurality of branch pipelines, each opening group being connected to at least one branch pipeline, the pipeline mechanism further comprising a plurality of valve bodies, each valve body corresponding to one branch pipeline, the valve body being configured to open or close the corresponding branch pipeline.
[0005] The distribution device provided by the present application can be arranged in the processing chamber of the semiconductor production equipment to distribute the processing gas flow into different positions of the processing chamber. The distribution device comprises a main body structure and a pipeline mechanism. The pipeline mechanism is connected to a gas flow source and provides processing gas to the processing chamber through the main body structure. The main body structure comprises a plurality of opening groups, each opening group comprising a plurality of first openings communicating with the processing chamber. The processing gas can flow to different positions of the processing chamber through different first openings. On this basis, the pipeline mechanism is provided with a distribution assembly corresponding to each opening group. The distribution assembly comprises a plurality of branch pipelines, and each opening group is connected to at least one branch pipeline. The pipeline mechanism further comprises a plurality of valve bodies, each valve body corresponding to one branch pipeline. The valve body is configured to open or close the corresponding branch pipeline. The flow rate of the processing gas entering different opening groups can be changed, thereby changing the distribution of the processing gas in different positions of the processing chamber to adapt to different processing requirements. Compared with the scheme in the related art in which the processing gas is uniformly introduced into the processing chamber, the distribution device of the present application can change the proportion of the processing gas introduced into different opening groups, thereby changing the distribution of the processing gas in the processing chamber and meeting different processing requirements.
[0006] In a possible implementation of the present application, the main body structure is further provided with a plurality of air flow cavities, each air flow cavity corresponding to each opening group one by one, the air flow cavity being communicated with the processing chamber through the corresponding first opening, and the air flow cavity being communicated with the corresponding branch pipeline through the second opening.
[0007] Here, by setting the air flow cavity, the gas of the plurality of branch pipelines can be mixed in the air flow cavity, improving the uniformity of the gas distribution in the same opening group; and the first opening and the second opening are both connected to the air flow cavity, facilitating the communication between the first opening and the second opening, simplifying the structure and facilitating processing.
[0008] In a possible implementation of the present application, the air flow cavity is communicated with a plurality of first openings, and the plurality of first openings are symmetrically distributed about the second opening of the same air flow cavity; and / or, the first openings corresponding to the plurality of air flow cavities are uniformly distributed along the extension direction of the main body structure.
[0009] Here, the first openings communicated by the air flow cavity can be symmetrically distributed about the second opening communicated thereby, so that the processing gas of the second opening can flow uniformly to different first openings; the plurality of first openings can also be uniformly distributed along the extension direction of the main body structure, so that the plurality of first openings are uniformly distributed in the processing chamber, facilitating the adjustment of the processing gas distribution in the processing chamber.
[0010] In a possible implementation of the present application, the pipeline mechanism further includes a first converging pipeline and a second converging pipeline, the first converging pipeline being communicated between the air flow source and the distribution assembly; and the second converging pipeline being communicated between the distribution assembly and the corresponding air flow cavity.
[0011] Here, by setting the first converging pipeline and the second converging pipeline, the first converging pipeline converges the branch pipelines in the distribution assembly to the air flow source, and the second converging pipeline converges the branch pipelines in the distribution assembly to the air flow cavity, thereby reducing the layout of the pipeline, simplifying the structure and facilitating maintenance.
[0012] In a possible implementation of the present application, the pipeline mechanism further includes an adjusting pipeline, the adjusting pipeline being connected to the first converging pipeline, and the adjusting pipeline being used to provide adjusting gas.
[0013] Here, by setting the adjusting pipeline, the adjusting gas provided by the adjusting pipeline can enter different opening groups through the first converging pipeline, so that the adjusting gas can have different distributions at different positions in the processing chamber, improving the distribution of the adjusting gas in the processing chamber to adapt to different processing requirements.
[0014] In a possible implementation of the present application, the cross-sectional areas of at least two branch pipelines in the same distribution assembly are different.
[0015] Here, in the same distribution assembly, at least two branch pipelines are provided with different cross-sectional areas, and under the condition that the air pressure is consistent, the branch pipeline with a larger cross-sectional area has a larger air flow, and the branch pipeline with a smaller cross-sectional area has a smaller air flow. By opening different branch pipelines through the valve body, more air flow distribution modes can be realized to meet diversified processing needs.
[0016] In a possible implementation of the present application, the main body structure is annular, and the main body structure comprises a middle axis line arranged therein, and the plurality of gas flow cavities are arranged in sequence in the circumferential direction of the middle axis line.
[0017] Here, the main body structure can be annular, and the plurality of gas flow cavities are arranged in sequence in the circumferential direction of the middle axis line, so as to improve the distribution of the processing gas at the edge of the processing chamber, improve the uniformity of the distribution of the processing gas in the processing chamber, and further improve the quality of the processed semiconductor.
[0018] In a possible implementation of the present application, the main body structure comprises a plurality of structure parts, and the plurality of structure parts enclose the plurality of gas flow cavities; the distribution device further comprises a sealing member, and the sealing member is arranged between adjacent structure parts to seal the corresponding gas flow cavities.
[0019] Here, by arranging the sealing member between the two adjacent structure parts, the sealing member can seal the gas flow cavities relative to the outside of the main body structure, and can also isolate the adjacent gas flow cavities, so as to maintain the mutual independence of the different gas flow cavities and reduce the mutual interference of the different gas flow cavities, so as to distribute the processing gas to different positions of the corresponding processing chamber.
[0020] In a second aspect, the embodiments of the present application provide a semiconductor production equipment, comprising an equipment body, a gas supply device and the distribution device of the first aspect, the equipment body is provided with a processing chamber; the distribution device is arranged in the processing chamber; and the gas supply device is connected to the pipeline mechanism of the distribution device to provide processing gas.
[0021] The semiconductor production equipment provided by the embodiments of the present application, the processing equipment of the embodiments of the present application, because it comprises the distribution device of the embodiments of the present application, the distribution device is located in the processing chamber and connected to the gas supply device through the pipeline mechanism. By arranging a plurality of opening groups and corresponding distribution assemblies, the proportion of processing gas flowing into different opening groups can be changed, so as to change the distribution of processing gas in the processing chamber, and different processing needs can be met.
[0022] In a possible implementation of the present application, the semiconductor production equipment further comprises a temperature control device, and the temperature control device comprises a plurality of independently arranged temperature adjusting mechanisms, and the plurality of temperature adjusting mechanisms are arranged at different positions of the processing chamber.
[0023] Here, by setting the temperature control device, the temperature control device comprises a plurality of independently set temperature adjusting mechanisms, different temperature adjusting mechanisms can be independently adjusted, and different temperature adjusting mechanisms are arranged at different positions of the processing chamber, and the temperature of different regions in the processing chamber can be adjusted in different regions. In combination with the distribution device, the processing gas in different positions of the processing chamber is adjusted, which is more convenient to adapt to different processing requirements. BRIEF DESCRIPTION OF DRAWINGS
[0024] Figure 1 A partial structure schematic diagram of a semiconductor production equipment provided by the embodiment of the present application is provided.
[0025] Figure 2 A connection schematic diagram of a pipeline mechanism in a semiconductor production equipment provided by the embodiment of the present application is provided.
[0026] Figure 3 A structure schematic diagram of a distribution assembly in a distribution device provided by the embodiment of the present application is provided.
[0027] Figure 4 A connection schematic diagram of a distribution assembly in a distribution device provided by the embodiment of the present application is provided.
[0028] Figure 5 A structure schematic diagram of a main body structure in a distribution device provided by the embodiment of the present application is provided.
[0029] Figure 6 A cut structure schematic diagram of a distribution device provided by the embodiment of the present application is provided.
[0030] REFERENCE NUMERALS:
[0031] 100 - equipment body; 110 - processing chamber; 200 - main body structure; 210 - first opening; 220 - second opening; 230 - air flow cavity; 240 - first structure part; 250 - second structure part; 300 - pipeline mechanism; 310 - first converging pipeline; 320 - second converging pipeline; 330 - distribution assembly; 331 - branch pipeline; 332 - valve body; 340 - adjusting pipeline; 350 - main pipeline; 360 - flow controller; 400 - gas supply device; 500 - temperature adjusting mechanism; 600 - sealing element. DETAILED DESCRIPTION
[0032] In order to make the purpose, technical scheme and advantages of the embodiment of the present application more clear, the specific technical scheme of the present application will be further described in detail below. The following embodiments are used to illustrate the present application, but not to limit the scope of the present application.
[0033] In the embodiments of the present application, the terms "first", "second" are used only for descriptive purposes, and cannot be construed as indicating or implying relative importance or implying the number of the technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.
[0034] In addition, in the embodiments of the present application, the orientation terms such as "upper", "lower", "left" and "right" are defined with respect to the orientation of the components shown in the drawings, and it should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and can be changed accordingly according to the change of the orientation of the components placed in the drawings.
[0035] In the embodiments of the present application, unless otherwise explicitly specified and limited, the term "connection" should be understood in a broad sense, for example, "connection" can be fixed connection, or detachable connection, or integral; can be directly connected, or indirectly connected through intermediate medium.
[0036] In the embodiments of the present application, the term "include", "contain" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed, or includes elements inherent to such process, method, article or device. Without more limitation, the element defined by the sentence "including a…" does not exclude the existence of other same elements in the process, method, article or device including the element.
[0037] In the embodiments of the present application, the words such as "exemplary" or "for example" are used to mean an example, illustration, or description. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the words such as "exemplary" or "for example" are intended to present the relevant concept in a specific manner.
[0038] The embodiments of the present application provide a distribution device, which can be used in a semiconductor production equipment. The semiconductor production equipment generates plasma etching of a semiconductor under the action of an electric field by introducing a processing gas into a processing chamber, and the distribution device can distribute the processing gas introduced into the processing chamber.
[0039] In some technical solutions, a mechanical arm, a sensor, etc. are arranged in the processing chamber, resulting in an asymmetric structure of the processing chamber, and the processing gas is uniformly introduced into the processing chamber, resulting in uneven distribution of the processing gas in the processing chamber, especially at the edge position, which is difficult to optimize, affecting the quality of the processed semiconductor.
[0040] With reference to Figure 1 and Figure 2 The distribution device provided by the embodiments of the present application is arranged in a semiconductor production equipment, and the semiconductor production equipment includes a processing chamber 110. The distribution device includes a main body structure 200 and a pipeline mechanism 300. The main body structure 200 includes a plurality of opening groups, and each opening group includes a plurality of first openings 210 that are in communication with the processing chamber 110. The pipeline mechanism 300 is used to communicate with a gas flow source (for example, a gas supply device 400). The pipeline mechanism 300 includes a distribution assembly 330 arranged corresponding to each opening group. The distribution assembly 330 includes a plurality of branch pipelines 331. Each opening group is connected to at least one branch pipeline 331. The pipeline mechanism 300 further includes a plurality of valve bodies 332. Each valve body 332 corresponds to each branch pipeline 331. The valve body 332 is used to open or close the corresponding branch pipeline 331.
[0041] The technical solutions provided by some embodiments of the present application are that the distribution device can be arranged in the processing chamber 110 of the semiconductor production equipment to distribute the processing gas flow into different positions of the processing chamber 110. The distribution device includes a main body structure 200 and a pipeline mechanism 300. The pipeline mechanism 300 is connected to a gas flow source to provide processing gas to the processing chamber 110 through the main body structure 200. The main body structure 200 includes a plurality of opening groups. Each opening group includes a plurality of first openings 210 that are in communication with the processing chamber 110. The processing gas can flow to different positions of the processing chamber 110 through different first openings 210.
[0042] On this basis, the pipeline mechanism 300 is provided with a distribution assembly 330 corresponding to each opening group. The distribution assembly 330 includes a plurality of branch pipelines 331. Each opening group is connected to at least one branch pipeline 331. The pipeline mechanism 300 further includes a plurality of valve bodies 332. Each valve body 332 corresponds to each branch pipeline 331. The valve body 332 is used to open or close the corresponding branch pipeline 331. The flow rate of the processing gas entering different opening groups can be changed, so that the distribution of the processing gas in different positions of the processing chamber 110 is changed to adapt to different processing requirements.
[0043] Compared with the scheme in the related art that the processing gas is uniformly introduced into the processing chamber 110, the distribution device in the embodiment of the present application can change the proportion of the processing gas introduced into the processing chamber 110 by the different opening groups and the corresponding distribution assemblies 330, thereby changing the distribution of the processing gas in the processing chamber 110, and being capable of meeting different processing requirements.
[0044] In some embodiments of the present application, the first opening 210 is in communication with the processing chamber 110 and can be located on the inner wall of the processing chamber 110. It can be understood that different first openings 210 are located at different positions of the processing chamber 110. In the case that different processing gases are introduced into different first openings 210, the distribution of the processing gas in the processing chamber 110 corresponding to the position of the different first openings 210 will be different, so as to adapt to the semiconductor processing requirements of the position.
[0045] In some embodiments of the present application, the opening group is formed by one or more first openings 210 in communication. The plurality of first openings 210 in the opening group are in communication with the same distribution assembly 330, which can provide uniform processing gas. The first openings 210 in different opening groups are in communication with different distribution assemblies 330, which can provide the same or different processing gas.
[0046] In some embodiments of the present application, the distribution assembly 330 is provided corresponding to the opening group. Different opening groups are in communication with different distribution assemblies 330, which can realize the adjustment of the processing gas in different opening groups, so as to introduce different processing gases into different positions of the processing chamber 110 by different first openings 210. It should be noted that the different processing gases can be different in flow rate, proportion, gas pressure, etc.
[0047] In some embodiments of the present application, the distribution assembly 330 includes a plurality of branch pipelines 331, and each branch pipeline 331 is provided with a valve body 332. In the case that the valve body 332 opens the corresponding branch pipeline 331, the processing gas can flow to the corresponding first opening 210 through the branch pipeline 331. In the case that the valve body 332 closes the corresponding branch pipeline 331, the processing gas cannot pass through the branch pipeline 331. It can be understood that when the number of the opened branch pipelines 331 is different, the flow rate of the processing gas introduced into the processing chamber 110 by the corresponding opening group is different. By individually controlling each distribution assembly 330, the flow rate of the processing gas introduced into the processing chamber 110 by different opening groups can be changed, thereby improving the distribution of the processing gas in the processing chamber 110.
[0048] Referring to Figure 3 and Figure 4 In some embodiments of the present application, the cross-sectional areas of at least two branch pipelines 331 in the same distribution assembly 330 are different. The cross section of the branch pipeline 331 is the cross section perpendicular to the axis direction thereof.
[0049] In some embodiments of this application, at least two branch pipes 331 in the same distribution component 330 are provided with different cross-sectional areas. When the air pressure is the same, the branch pipe 331 with a larger cross-sectional area has a larger air flow rate, and the branch pipe 331 with a smaller cross-sectional area has a smaller air flow rate. By opening different branch pipes 331 through the valve body 332, more airflow distribution methods can be realized to meet diverse processing needs.
[0050] In some embodiments of this application, the distribution component 330 may include two or more branch pipes 331. The cross-sectional areas of the branch pipes 331 in the distribution component 330 may be the same or different. Alternatively, some branch pipes 331 may have different cross-sectional areas, while others may have different cross-sectional areas. Furthermore, the number and cross-sectional area of the branch pipes 331 in different distribution components 330 may be the same or different. This application does not impose any limitations on this.
[0051] In one example, the different distribution components 330 are configured with the same structural form to facilitate manufacturing. Taking one distribution component 330 as an example, the distribution component 330 includes three branch pipes 331, and the three branch pipes 331 have different cross-sectional areas. It can be understood that the three branch pipes 331 correspond to different processing gas flow rates. The branch pipes 331 in the distribution component 330 can be completely closed or completely open, or some branch pipes 331 in the distribution component 330 can be open while others are closed, all of which will result in different processing gas flow rates for the corresponding opening groups.
[0052] In some embodiments of this application, the valve body 332 can be a gate valve, ball valve, butterfly valve, flow valve, pressure valve, distribution valve, three-way valve, etc. The operation mode of the valve body 332 can be manual, electric, pneumatic, hydraulic, etc. The branch pipeline 331 can be equipped with one or more valve bodies 332 as components. This application does not limit this.
[0053] Reference Figure 1 and Figure 2 In some embodiments of this application, the main structure 200 is further provided with a plurality of airflow chambers 230, each airflow chamber 230 corresponding to each opening group. The airflow chamber 230 is connected to the processing chamber 110 through the corresponding first opening 210, and the airflow chamber 230 is connected to the corresponding branch pipe 331 through the second opening 220.
[0054] Some embodiments of the present application provide a technical scheme, by setting the gas flow cavity 230, so that the gas of the plurality of branch pipes 331 can be mixed in the gas flow cavity 230, and the uniformity of the gas distribution in the same opening group is improved; and the first opening 210 and the second opening 220 are both connected to the gas flow cavity 230, facilitating the communication between the first opening 210 and the second opening 220, simplifying the structure and facilitating processing.
[0055] In some embodiments of the present application, the gas flow cavity 230 is a cavity structure arranged in the main body structure 200, the gas flow cavity 230 is communicated with the processing chamber 110 through the first opening 210, and is communicated with the branch pipe 331 through the second opening 220. In other words, the corresponding distribution assembly 330 and the first opening 210 are communicated through the gas flow cavity 230. Among them, the second opening 220 is arranged in the main body structure 200, and the gas flow cavity 230 can be provided with the second opening 220 corresponding to each branch pipe 331 of the distribution assembly 330, or the plurality of branch pipes 331 in the distribution assembly 330 are communicated with the corresponding gas flow cavity 230 through the same second opening 220.
[0056] In some embodiments of the present application, the first opening 210 and the second opening 220 can be through holes communicating with the gas flow cavity 230, the first opening 210 can be a constant-diameter hole, a variable-diameter hole, a stepped hole, etc., the extension axis of the first opening 210 can be a straight line, a curve, a spiral line, etc., and the radial cross section of the first opening 210 can be a regular or irregular shape such as a circle, an ellipse, a square, a triangle, or a rhombus. In addition, the second opening 220 can also be a constant-diameter hole, a variable-diameter hole, a stepped hole, etc., the extension axis of the second opening 220 can be a straight line, a curve, a spiral line, etc., and the radial cross section of the second opening 220 can be a regular or irregular shape such as a circle, an ellipse, a square, a triangle, or a rhombus.
[0057] In some embodiments of the present application, the plurality of first openings 210 corresponding to the gas flow cavity 230 can be arranged in the same or different structures, and the first openings 210 and the second openings 220 corresponding to different gas flow cavities 230 can be the same or different. In an example, the first openings 210 on the main body structure 200 all adopt the same structure, and the second openings 220 also adopt the same structure, and the first openings 210 and the second openings 220 are both circular constant-diameter through holes.
[0058] In some embodiments of the present application, the first opening 210 and the second opening 220 can be arranged on the same or different side walls of the gas flow cavity 230. In an example, the first opening 210 and the second opening 220 are arranged on the opposite side walls of the gas flow cavity 230; in another example, the first opening 210 and the second opening 220 are arranged on the adjacent side walls of the gas flow cavity 230.
[0059] Reference Figure 1 , Figure 2and Figure 5 In some embodiments of the present application, the airflow cavity 230 is connected with a plurality of first openings 210, and the plurality of first openings 210 are symmetrically distributed about the second opening 220 of the same airflow cavity 230; and / or, the first openings 210 corresponding to the plurality of airflow cavities 230 are uniformly distributed along the extension direction of the main body structure 200.
[0060] In some embodiments of the present application, the first openings 210 connected with the airflow cavity 230 can be symmetrically distributed about the second opening 220, so that the process gas of the second opening 220 can uniformly flow to different first openings 210; and the plurality of first openings 210 can also be uniformly distributed along the extension direction of the main body structure 200, so that the plurality of first openings 210 are uniformly distributed in the process chamber 110, which is more convenient for adjusting the distribution of process gas in the process chamber 110.
[0061] In some embodiments of the present application, the plurality of first openings 210 corresponding to the airflow cavity 230 can be symmetrically distributed about the second opening 220, which can be axisymmetric, center symmetric, etc. about the second opening 220. In an example, the airflow cavity 230 includes one second opening 220 and two first openings 210, and the two first openings 210 are axisymmetrically distributed about the second opening 220.
[0062] In some embodiments of the present application, the plurality of first openings 210 can also be uniformly distributed along the extension direction of the main body structure 200, which can be equidistant distribution, circular array distribution, rectangular array distribution, etc. The extension direction of the main body structure 200 can be the length direction, the circumferential direction, etc. In an example, the main body structure 200 is a ring structure, the extension direction is the circumferential direction, and the plurality of first openings 210 are equidistantly distributed along the circumferential direction of the main body structure 200.
[0063] Referring to Figure 2 , Figure 3 and Figure 4 In some embodiments of the present application, the pipeline mechanism 300 further includes a first converging pipeline 310 and a second converging pipeline 320, the first converging pipeline 310 is connected between the airflow source and the distribution assembly 330; and the second converging pipeline 320 is connected between the distribution assembly 330 and the corresponding airflow cavity 230.
[0064] In some embodiments of the present application, by setting the first converging pipeline 310 and the second converging pipeline 320, the first converging pipeline 310 converges the branch pipelines 331 in the distribution assembly 330 to the airflow source, and the second converging pipeline 320 converges the branch pipelines 331 in the distribution assembly 330 to the airflow cavity 230, thereby reducing the layout of the pipeline, simplifying the structure, and facilitating maintenance.
[0065] In some embodiments of the present application, one end of the first manifold pipe 310 is connected to the gas source, and the other end of the first manifold pipe 310 is connected to each branch pipe 331, respectively. Alternatively, the branch pipe 331 of each distribution assembly 330 is connected to the same middle manifold pipe, and the two ends of the first manifold pipe 310 are connected to the gas source and the middle manifold pipe, respectively. The middle manifold pipe can also be provided with a valve body 332 to adjust the distribution assembly 330 as a whole, which is more convenient.
[0066] In some embodiments of the present application, one end of the second manifold pipe 320 is connected to the corresponding gas flow cavity 230 through the second opening 220, and the other end is connected to each branch pipe 331 in the corresponding distribution assembly 330. Of course, the second manifold pipe 320 can also not be provided, and each branch pipe 331 is connected to the corresponding gas flow cavity 230 through the second opening 220, respectively.
[0067] Reference Figure 2 In some embodiments of the present application, the pipe mechanism 300 further includes an adjusting pipe 340 connected to the first manifold pipe 310, and the adjusting pipe 340 is used to provide adjusting gas.
[0068] In some embodiments of the present application, the adjusting pipe 340 is provided, and the adjusting gas provided by the adjusting pipe 340 can enter different opening groups through the first manifold pipe 310, so that the adjusting gas can have different distributions at different positions of the processing chamber 110, and the distribution of the adjusting gas in the processing chamber 110 is improved to adapt to different processing requirements.
[0069] In some embodiments of the present application, the processing gas can include a main gas and an adjusting gas, the adjusting pipe 340 can be connected to a gas source, the gas source is used to provide the main gas to the first manifold pipe 310 and provide the adjusting gas to the adjusting pipe 340, and the adjusting gas and the main gas are mixed to form the processing gas required for semiconductor processing.
[0070] In some embodiments of the present application, the pipe mechanism 300 can further include a main pipe 350 and a flow controller 360. The main pipe 350 can be one or more, and the main pipe 350 is connected to the processing chamber 110. The first manifold pipe 310 and the main pipe 350 are both connected to the flow controller 360, and the flow controller 360 is connected to the gas source. The flow of the main gas in the first manifold pipe 310 and the main pipe 350 is controlled by the flow controller 360.
[0071] In some embodiments of the present application, the adjusting pipe 340 can also be connected to the main pipe 350 for adjusting the gas in the main pipe 350. For example, the adjusting pipe 340 includes branches corresponding to each main pipe 350 and the first collecting pipe 310, and a valve body 332 is arranged corresponding to each branch of the adjusting pipe 340, so as to control the proportion of the adjusting gas in different pipes.
[0072] With reference to Figure 1 , Figure 2 and Figure 5 In some embodiments of the present application, the main body structure 200 is annular, and the main body structure 200 includes a middle axis line, and the plurality of gas flow cavities 230 are arranged in sequence along the circumferential direction of the middle axis line.
[0073] In some embodiments of the present application, the main body structure 200 can be annular, and the plurality of gas flow cavities 230 are arranged in sequence along the circumferential direction of the middle axis line, so as to improve the distribution of the processing gas at the edge of the processing chamber 110, improve the uniformity of the distribution of the processing gas in the processing chamber 110, and further improve the quality of the processed semiconductor.
[0074] In some embodiments of the present application, the middle axis line of the main body structure 200 can be an axis line passing through the geometric center of the main body structure 200. For example, the main body structure 200 is columnar, and the middle axis line is a straight line connecting the centers of the two end faces. For another example, the main body structure 200 is plate-shaped, and the opposite sides with the largest area are circular, and the middle axis line is a straight line connecting the centers of the two sides.
[0075] In some embodiments of the present application, the shape of the main body structure 200 can be set according to the structure of the processing chamber 110. The main body structure 200 can be a plate-shaped structure, a block-shaped structure, an annular structure, etc., and the outer contour of the main body structure 200 can be square, circular, elliptical, etc. For example, the opening side of the processing chamber 110 is circular, the main body structure 200 is circular ring-shaped, and is arranged at the edge of the opening side of the processing chamber 110, and the middle part of the opening side of the processing chamber 110 is used to arrange the main pipe 350.
[0076] In some embodiments of the present application, the plurality of gas flow cavities 230 are arranged in sequence along the circumferential direction of the middle axis line, so as to be arranged around the main pipe 350. Correspondingly, the plurality of first openings 210 are also arranged around the main pipe 350 at the opening of the processing chamber 110. In an example, the main body structure 200 includes four gas flow cavities 230 arranged along the circumferential direction thereof, each gas flow cavity 230 is provided with two first openings 210, and the plurality of first openings 210 are arranged at equal intervals along the circumferential direction of the main body structure 200.
[0077] In some embodiments of the present application, the main body structure 200 includes a plurality of structural parts (for example, the first structural part 240, the second structural part 250, etc.), and the plurality of structural parts enclose a plurality of airflow cavities 230; the distribution device further includes a sealing member 600, and the sealing member 600 is arranged between adjacent structural parts to seal the corresponding airflow cavity 230.
[0078] Some embodiments of the present application provide a technical solution, by arranging the sealing member 600 between the two adjacent structural parts, the sealing member 600 can seal the airflow cavity 230 relative to the outside of the main body structure 200, and can also isolate the adjacent airflow cavities 230, thereby maintaining the mutual independence of different airflow cavities 230, reducing the mutual interference of different airflow cavities 230, so as to facilitate the distribution of process gas to different positions of the corresponding process chamber 110.
[0079] In some embodiments of the present application, the sealing member 600 can be a sealing filler, a sealing ring, etc., a sealing film, etc., and the sealing member 600 can be made of elastic materials such as rubber and elastic plastic, and has good fitting effect with the main body structure 200 by elastic deformation, so as to improve the sealing effect.
[0080] In some embodiments of the present application, the main body structure 200 can include a plurality of structural parts, and the plurality of parts are buckled or stacked to form a plurality of airflow cavities 230, and the sealing member 600 is arranged between the plurality of parts of the main body structure 200. For example, the sealing member 600 includes an outer sealing ring close to the outer edge of the main body structure 200, and an inner sealing ring close to the center of the main body structure 200.
[0081] Referring to Figure 6 In some embodiments of the present application, the main body structure 200 includes the first structural part 240 and the second structural part 250, and the first structural part 240 and the second structural part 250 include annularly arranged groove bodies, and the groove bodies are divided into a plurality of spaces by the partition plates arranged in the groove bodies. In the buckling state of the first structural part 240 and the second structural part 250, the first structural part 240, the second structural part 250 and the partition plates therein divide the enclosed groove bodies into a plurality of airflow cavities 230.
[0082] On this basis, the sealing member 600 can be arranged between the first structural part 240 and the second structural part 250, and the sealing member 600 can be arranged corresponding to each airflow cavity 230, for example, the sealing member 600 in the form of a sealing ring surrounds the corresponding airflow cavity 230; or, two nested annular sealing members 600 are arranged, and the plurality of airflow cavities 230 are arranged between the two sealing members 600, and the sealing member 600 in the form of a sealing gasket is arranged at the connecting partition plate.
[0083] On this basis, the present application provides a semiconductor production equipment, referring to Figure 1The semiconductor production equipment includes an equipment body 100, a gas supply device 400, and the distribution device of the first aspect, the equipment body 100 is provided with a processing chamber 110; the distribution device is arranged in the processing chamber 110; the gas supply device 400 is connected to the pipeline mechanism 300 of the distribution device to provide processing gas.
[0084] The processing equipment of the embodiments of the present application can change the proportion of the processing gas flowing into different opening groups by arranging multiple opening groups and corresponding distribution assemblies 330, thereby changing the distribution of the processing gas in the processing chamber 110, and meeting different processing requirements.
[0085] In some embodiments of the present application, the gas supply device 400 can serve as the above-mentioned gas flow source, and the gas supply device 400 can include a gas generator, a gas tank, a gas pump, etc.
[0086] In some embodiments of the present application, the equipment body 100 can further include a processing device, for example, a device for generating a radio frequency current, which acts on the processing gas to make the processing gas turn into plasma, so as to realize etching of the semiconductor.
[0087] In some embodiments of the present application, the equipment body 100 can further include a positioning chuck, which is arranged in the processing chamber 110 and used to carry the semiconductor to be processed, and the positioning chuck is opposite to the opening of the processing chamber 110, so that the processing gas flowing into the first opening 210 and the main pipeline 350 sprays towards the semiconductor on the positioning chuck.
[0088] Referring to Figure 1 In some embodiments of the present application, the semiconductor production equipment further includes a temperature control device, and the temperature control device includes multiple independently arranged temperature adjusting mechanisms 500, and the multiple temperature adjusting mechanisms 500 are arranged at different positions of the processing chamber 110.
[0089] The temperature control device includes multiple independently arranged temperature adjusting mechanisms 500, different temperature adjusting mechanisms 500 can be independently adjusted, and different temperature adjusting mechanisms 500 are arranged at different positions of the processing chamber 110, so that the temperature of different regions in the processing chamber 110 can be adjusted in a partitioned manner, and in combination with the adjustment of the processing gas at different positions in the processing chamber 110 by the distribution device, different processing requirements can be more easily adapted to.
[0090] In some embodiments of the present application, the temperature control device can be arranged on the positioning chuck, i.e., the positioning chuck is provided with a plurality of temperature adjusting mechanisms 500, which can be heating members, refrigeration members, etc. By controlling the temperature adjusting mechanisms 500, the temperature distribution at the corresponding positions in the processing chamber 110 can be improved.
[0091] Referring to Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 、 Figure 5 and Figure 6 In some embodiments of the present application, the device body 100 is formed with a processing chamber 110 for processing semiconductors, and a gas flow source is connected to the processing chamber 110 through a pipeline mechanism 300 to provide processing gas. The pipeline mechanism 300 includes a flow controller 360 connected to the gas flow source, a first manifold pipeline 310, and two main conduit pipelines 350 connected to the flow controller 360. The main conduit pipelines 350 are connected to the middle part of the opening side of the processing chamber 110, and the first manifold pipeline 310 is connected to the main body structure 200. The pipeline mechanism 300 further includes an adjusting pipeline 340 connected to the main conduit pipeline 350 and the first return pipeline, respectively. The main body structure 200 is a ring structure, and the main body structure 200 has a first opening 210 arranged towards the processing chamber 110. Along the circumferential direction of the main body structure 200, four gas flow cavities 230 are arranged respectively, and each gas flow cavity 230 is connected to the processing chamber 110 through two first openings 210. The gas flow cavities 230 are sealed by a sealing member 600. The pipeline mechanism 300 includes four sets of distribution assemblies 330 corresponding to the four gas flow cavities 230, and the four sets of distribution assemblies 330 correspond to the four gas flow cavities 230 one by one. The distribution assembly 330 includes three branch pipelines 331 with different cross-sectional areas, and the three branch pipelines 331 are connected to the corresponding second openings 220 through a second manifold pipeline 320 to connect the corresponding gas flow cavities 230. The branch pipelines 331 of the four sets of distribution assemblies 330 are all connected to the first manifold pipeline 310, and each branch pipeline 331 is provided with a valve body 332 corresponding to the branch pipeline 331. By opening or closing the valve body 332, the flow of processing gas in the corresponding branch pipeline 331 can be allowed or blocked, so as to change the flow of processing gas in the corresponding distribution assembly 330. The distribution assemblies 330 corresponding to different gas flow cavities 230 can be provided with different flows, so that the processing gas flowing into different positions of the edge of the processing chamber 110 can be adjusted according to the needs, so that the processing gas distribution of the processing chamber 110 can be set according to the processing needs to meet the individualized processing needs.
[0092] After the processing gas is adjusted by the four sets of distribution assemblies 330, the distribution of the processing gas at the edge of the airflow cavity 230 is more targeted and more suitable for processing requirements. For example, the sizes of the spaces at different positions of the edge of the processing chamber 110 are different, and after the processing gas with different flow rates is introduced by the distribution assemblies 330, the concentration distribution of the airflow at different positions of the edge of the processing chamber 110 tends to be balanced.
[0093] The above-mentioned sequence numbers of the embodiments of the present application are only for description, and do not represent the advantages and disadvantages of the embodiments. The above is only the preferred embodiment of the present application, and does not limit the patent scope of the present application, and any equivalent structure or equivalent process transformation using the content of the specification and drawings of the present application, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A dispensing apparatus provided in a semiconductor production apparatus including a processing chamber, characterized by, The distribution device comprises: a main structure comprising a plurality of opening groups, each of the opening groups comprising a plurality of first openings communicating with the processing chamber; a pipeline mechanism for communicating with a gas flow source, the pipeline mechanism comprising a distribution assembly arranged corresponding to each of the opening groups, the distribution assembly comprising a plurality of branch pipelines, each of the opening groups being communicated with at least one of the branch pipelines, the pipeline mechanism further comprising a plurality of valve bodies corresponding to the branch pipelines one by one, the valve bodies being used for opening or closing the corresponding branch pipelines.
2. The dispensing device of claim 1, wherein, The main structure is further provided with a plurality of gas flow cavities corresponding to the opening groups one by one, the gas flow cavities communicating with the processing chamber through the corresponding first openings, and the gas flow cavities communicating with the corresponding branch pipelines through second openings.
3. The dispensing device of claim 2, wherein, The gas flow cavities communicate with a plurality of the first openings, and the first openings are symmetrically distributed about the second openings of the same gas flow cavity; and / or, The first openings corresponding to the gas flow cavities are uniformly distributed along the extension direction of the main structure.
4. The dispensing device of claim 2, wherein, The pipeline mechanism further comprises: a first converging pipeline communicating between the gas flow source and the distribution assembly; a second converging pipeline communicating between the distribution assembly and the corresponding gas flow cavities.
5. The dispensing device of claim 4, wherein, The pipeline mechanism further comprises an adjusting pipeline connected to the first converging pipeline, the adjusting pipeline being used for providing adjusting gas.
6. The dispensing device of claim 1, wherein, The cross-sectional areas of at least two of the branch pipelines in the same distribution assembly are different.
7. The dispensing device of any one of claims 2 to 5, wherein, The main structure is annular, and the main structure comprises an arranged central axis, and the gas flow cavities are sequentially distributed in the circumferential direction of the central axis.
8. The dispensing device of any one of claims 2 to 5, wherein, The main structure comprises a plurality of structural parts, and the structural parts enclose the gas flow cavities; The distribution device further comprises a sealing member arranged between adjacent structural parts to seal the corresponding gas flow cavities.
9. A semiconductor production apparatus characterized by comprising: Comprise: an equipment body provided with a processing chamber; the distribution device according to any one of claims 1 to 8 arranged in the processing chamber; a gas supply device connected to the pipeline mechanism of the distribution device to provide processing gas.
10. The semiconductor production apparatus according to Claim 9, characterized by Further comprising a temperature control device, the temperature control device comprising a plurality of independently arranged temperature adjusting mechanisms, and the temperature adjusting mechanisms are arranged at different positions of the processing chamber. Further comprising a temperature control device, the temperature control device comprising a plurality of independently arranged temperature adjusting mechanisms, and the temperature adjusting mechanisms are arranged at different positions of the processing chamber.