Semiconductor processing system

Abstract

The utility model discloses a semiconductor processing system, and belongs to the technical field of semiconductors. The semiconductor processing system comprises a processing production line, the processing production line comprises a laser irradiation unit, a stripping unit and at least one grinding unit, the laser irradiation unit, the stripping unit and the at least one grinding unit are sequentially arranged along a processing station, and a handover unit and a cache unit are arranged on one side of each of the laser irradiation unit, the stripping unit and the grinding unit; the conveying production line comprises an annular guide rail, a sliding block with a rotating shaft and a mechanical arm component, the annular guide rail is arranged on the periphery of the machining production line in a surrounding mode, the sliding block is arranged on the annular guide rail and can move along the annular guide rail, and the mechanical arm component is arranged on the rotating shaft and matched with the transfer unit to be used for carrying the crystal ingots or the wafers to the target station. According to the utility model, the cutting, stripping and grinding of the crystal ingot are automatically completed, the production efficiency is improved, and the batch production of wafers is facilitated.

Description

TECHNICAL FIELD

[0001] The utility model relates to a semiconductor technical field especially relates to a semiconductor processing system. BACKGROUND

[0002] Third generation semiconductor materials such as SiC, GaN or diamond have various excellent material properties, which determine that they can be well applied to power devices or LED devices. The wafer of silicon carbide is usually cut by wire cutting, however, this processing technology will cause great loss to the material, and it takes a long time, which greatly affects the cost of silicon carbide.

[0003] Therefore, the following technology is proposed: the focal point of laser light with a wavelength that is transmissive to single crystal SiC is positioned inside a single crystal SiC ingot to irradiate the single crystal SiC ingot with laser light, a separation layer is formed at a cutting predetermined surface, and the SiC wafer is separated from the single crystal SiC ingot along the cutting predetermined surface where the separation layer is formed.

[0004] However, the process of forming a separation layer on a single crystal SiC ingot, the process of separating a SiC wafer from a single crystal SiC ingot, and the process of grinding the upper surface of a single crystal SiC ingot to flatten it are performed manually, and there is a problem of poor production efficiency.

[0005] Therefore, it is urgent to provide a semiconductor processing system to solve the above problems. UTILITY MODEL CONTENT

[0006] The utility model aims at providing a semiconductor processing system, which automatically completes the cutting, separation and grinding of the ingot, improves the production efficiency, and is helpful for the batch production of wafers.

[0007] To achieve the above-mentioned purpose, the following technical scheme is provided:

[0008] The semiconductor processing system comprises:

[0009] The processing production line comprises a laser irradiation unit, a separation unit and at least one grinding unit, the laser irradiation unit, the separation unit and at least one grinding unit are sequentially arranged along the processing station, and one side of the laser irradiation unit, the separation unit and the grinding unit is provided with a transfer unit and a buffer unit;

[0010] The conveying production line comprises a ring guide rail, a sliding block with a rotating shaft and a mechanical arm component, the ring guide rail surrounds the periphery of the processing production line, the sliding block is arranged on the ring guide rail and can move along the ring guide rail, and the mechanical arm component is arranged on the rotating shaft, and the mechanical arm component cooperates with the transfer unit to carry the ingot or wafer to the target station.

[0011] As an optional solution of the semiconductor processing system, the mechanical arm member comprises a fifth moving module, a sixth moving module and a carrying finger, the outer wall surface of the fifth moving module is connected with the rotating shaft, the sixth moving module is arranged on the fifth moving module and can move along a third direction, and the carrying finger is arranged on the sixth moving module and can extend and retract along a first direction.

[0012] As an optional solution of the semiconductor processing system, the laser irradiation unit comprises a first base, a laser generating member and a first moving platform member, the laser generating member and the first moving platform member are arranged on the first base, and the first moving platform member can transport the crystal ingot to the lower side of the laser irradiation area of the laser generating member.

[0013] As an optional solution of the semiconductor processing system, the first moving platform member comprises a first moving module, a second moving module and a first carrier, the first moving module is arranged on the first base, the second moving module is arranged on the first moving module and can move along a first direction, and the first carrier is arranged on the second moving module and can move along a second direction.

[0014] As an optional solution of the semiconductor processing system, the peeling unit comprises a second base, a peeling member and a second moving platform member, the peeling member and the second moving platform member are arranged on the second base, the second moving platform member can transport the crystal ingot to the lower side of the peeling member, and the peeling member can adsorb the wafer to lift along a third direction.

[0015] As an optional solution of the semiconductor processing system, the second moving platform member comprises a third moving module and a second carrier, the third moving module is arranged on the second base, and the second carrier is arranged on the third moving module and can move along a first direction.

[0016] As an optional solution of the semiconductor processing system, the grinding unit comprises a third base, a grinding member and a third moving platform member, the grinding member and the third moving platform member are arranged on the third base, the third moving platform member can transport the crystal ingot or the wafer to the lower side of the grinding member, and the grinding member can approach or move away from the third moving platform member along a third direction.

[0017] As an optional solution of the semiconductor processing system, the third moving platform member comprises a fourth moving module and a third carrier, the fourth moving module is arranged on the third base, and the third carrier is arranged on the fourth moving module and can move along a first direction.

[0018] As an optional solution of the semiconductor processing system, the transfer unit comprises a seventh moving module, an eighth moving module and an adsorption member, the seventh moving module extends along a first direction, the eighth moving module is arranged on the seventh moving module and can move along the first direction, and the adsorption member is arranged on the eighth moving module and can move along a third direction, and the adsorption member is used for adsorbing the ingot or the wafer.

[0019] As an optional solution of the semiconductor processing system, the semiconductor processing system further comprises:

[0020] An ingot storage unit is arranged at the feeding end of the processing production line.

[0021] A wafer storage unit is arranged at the discharging end of the processing production line.

[0022] Compared with the prior art, the semiconductor processing system has the following beneficial effects:

[0023] The semiconductor processing system provided by the utility model discloses that the laser irradiation unit, the stripping unit and the grinding unit are sequentially arranged along the processing station, the number of grinding units can be increased or reduced to meet the requirements of product fine grinding or coarse grinding. The buffer unit is arranged on one side of the laser irradiation unit, the stripping unit and the grinding unit, avoiding the conflict between processes, and helping to further improve the production speed. The ingot can be sequentially completed by the laser irradiation, the stripping and the grinding through the transfer unit and the mechanical arm member on the ring guide rail, and then returned to the feeding end of the processing production line through the ring guide rail to enter the next processing step, so that the cutting, the stripping and the grinding of the ingot can be automatically completed, and the production efficiency is improved. The mechanical arm member can be rotated through the rotating shaft, the ingot and the wafer can be turned over, and the polishing of the upper and lower surfaces of the ingot and the wafer is facilitated. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the utility model, the following will briefly introduce the drawings needed to be used in the description of the embodiments of the utility model. Obviously, the drawings in the following description are only some embodiments of the utility model, and other drawings can be obtained by the person skilled in the art according to the contents of the embodiments of the utility model and these drawings without paying creative labor.

[0025] Figure 1 It is the assembly diagram of the semiconductor processing system in the embodiment of the utility model;

[0026] Figure 2 It is the top view of the semiconductor processing system in the embodiment of the utility model;

[0027] Figure 3 It is the structural schematic view of the laser irradiation unit in the embodiment of the utility model;

[0028] Figure 4 Structure diagram of a stripping unit in an embodiment of the present application;

[0029] Figure 5 Structure diagram of a grinding unit in an embodiment of the present application;

[0030] Figure 6 Structure diagram of a handover unit in an embodiment of the present application;

[0031] Figure 7 Structure diagram of a buffer unit in an embodiment of the present application;

[0032] Figure 8 Structure diagram of a crystal ingot storage unit in an embodiment of the present application;

[0033] Figure 9 Structure diagram of a wafer storage unit in an embodiment of the present application;

[0034] Figure 10 Structure diagram of a part of a conveying production line in an embodiment of the present application.

[0035] Reference signs:

[0036] 100, laser irradiation unit; 101, first machine base; 102, laser generating component; 103, first moving platform component; 1031, first moving module; 1032, second moving module; 1033, first stage;

[0037] 200, stripping unit; 201, second machine base; 202, stripping component; 203, second moving platform component; 2031, third moving module; 2032, second stage;

[0038] 300, grinding unit; 301, third machine base; 302, grinding component; 303, third moving platform component; 3031, fourth moving module; 3032, third stage;

[0039] 400, handover unit; 401, seventh moving module; 402, eighth moving module; 403, adsorbing component;

[0040] 500, buffer unit; 501, sixth machine base; 502, fourth stage;

[0041] 600, crystal ingot storage unit; 601, fourth machine base; 602, ninth moving module; 603, crystal ingot storage component; 6031, crystal ingot storage space;

[0042] 700, wafer storage unit; 701, fifth machine base; 702, tenth moving module; 703, mechanical hand component; 704, wafer storage component; 7041, wafer storage space;

[0043] 800, conveying production line; 801, ring-shaped guide rail; 802, mechanical arm member; 8021, fifth moving module; 8022, sixth moving module; 8023, carrying finger; 803, sliding block; 8031, rotating shaft. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments of the present application. The components of the embodiments of the present application described and shown in the drawings herein can be arranged and designed in various different configurations.

[0045] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships in which the product of the present application is usually placed during use, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third", etc. are only used for differentiation in description, and cannot be understood as indicating or implying relative importance. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.

[0046] In the description of the present application, it should also be noted that, unless otherwise explicitly specified and limited, the terms "provided", "connected" should be understood broadly, for example, can be fixedly connected, or can be detachably connected, or integrally connected; can be mechanically connected, or can be electrically connected. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0047] The embodiments of the present application will be described in detail below, and examples of the embodiments are shown in the drawings, in which the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0048] In order to automatically complete the cutting, peeling and grinding of the ingot, improve the production efficiency and mass-produce wafers, the present embodiment provides a semiconductor processing system, which will be described below in combination with Figures 1 to 10The embodiment will be described in detail. It should be noted that the first direction mentioned in the embodiment is the X direction in Figure 1 The second direction mentioned in the embodiment is the Y direction in Figure 1 The third direction mentioned in the embodiment is the Z direction in Figure 1 The processing of SiC is taken as an example in the embodiment, but the technology can also be applied to the processing of other high-hardness transparent materials.

[0049] The semiconductor processing system in the embodiment includes a processing production line and a conveying production line 800. The processing production line includes a laser irradiation unit 100, a stripping unit 200, and at least one grinding unit 300, which are sequentially arranged along a processing station. The laser irradiation unit 100, the stripping unit 200, and the grinding unit 300 are each provided with a transfer unit 400 and a buffer unit 500 on one side. The conveying production line 800 includes a ring guide rail 801, a slider 803 with a rotating shaft 8031, and a mechanical arm member 802. The ring guide rail 801 surrounds the periphery of the processing production line. The slider 803 is arranged on the ring guide rail 801 and can move along the ring guide rail 801. The mechanical arm member 802 is arranged on the rotating shaft 8031. The mechanical arm member 802 cooperates with the transfer unit 400 to carry the crystal ingot or wafer to the target station.

[0050] Briefly, the semiconductor processing system provided by the utility model discloses sequentially arranging the laser irradiation unit 100, the stripping unit 200, and the grinding unit 300 along the processing station. The number of grinding units 300 can be increased or decreased to meet the requirements of product fine grinding or coarse grinding. The buffer unit 500 is arranged on one side of the laser irradiation unit 100, the stripping unit 200, and the grinding unit 300 to avoid conflicts between processes, which helps to further improve the production speed. The crystal ingot can be sequentially subjected to laser irradiation, stripping, and grinding by the transfer unit 400 and the mechanical arm member 802 on the ring guide rail 801, and then returned to the feeding end of the processing production line through the ring guide rail 801 to enter the next processing step, which can automatically complete the cutting, stripping, and grinding of the crystal ingot and improve the production efficiency. The mechanical arm member 802 can be rotated by the rotating shaft 8031 to realize the overturning of the crystal ingot and the wafer, which helps to polish the upper and lower surfaces of the crystal ingot and the wafer.

[0051] Further, as Figure 1 in combination with Figure 10As shown, the robotic arm component 802 includes a fifth moving module 8021, a sixth moving module 8022, and a handling finger 8023. The outer wall of the fifth moving module 8021 is connected to a rotating shaft 8031 ​​for flipping the product, which helps to polish the upper and lower surfaces of the wafer. The sixth moving module 8022 is disposed on the fifth moving module 8021 and is movable in a third direction. The handling finger 8023 is disposed on the sixth moving module 8022 and is extendable in a first direction. Exemplarily, the handling finger 8023 has a U-shaped structure, with the fifth moving module 8021 extending in a third direction and the sixth moving module 8022 extending in the first direction (when the robotic arm component 802 and the transfer unit 400 are in a relative state). Understandably, in some application scenarios where product flipping is not required, by eliminating the rotation axis 8031 ​​on the slider 803, the fifth moving module 8021 can be directly mounted on the slider 803. The slider 803 is located inside the annular guide rail 801 and can move along the annular guide rail 801. Exemplarily, the slider 803 can move inside the annular guide rail 801 by magnetic force, similar to the technology of existing magnetic levitation trains, and no further limitations are imposed here.

[0052] Furthermore, such as Figure 1 Combination Figure 3 As shown, the laser irradiation unit 100 includes a first base 101, a laser generating component 102, and a first moving platform component 103. Both the laser generating component 102 and the first moving platform component 103 are mounted on the first base 101. The first moving platform component 103 can transport the crystal ingot below the irradiation area of ​​the laser generating component 102. Through irradiation scanning by the laser generating component 102, a modified layer is formed at a set depth on the crystal ingot, and the laser is used to complete the slicing of the crystal ingot. Furthermore, the first moving platform component 103 includes a first moving module 1031, a second moving module 1032, and a first stage 1033. The first moving module 1031 is mounted on the first base 101, the second moving module 1032 is mounted on the first moving module 1031 and can move along a first direction, and the first stage 1033 is mounted on the second moving module 1032 and can move along a second direction. The first moving module 1031 extends along the first direction, and the second moving module 1032 extends along the second direction. The first moving module 1031 and the second moving module 1032 facilitate the movement of the crystal ingot on the first stage 1033 along the first direction or the second direction, so that the crystal ingot is within the coverage area of ​​the laser scanning path of the laser generating component 102.

[0053] Furthermore, such as Figure 1 Combination Figure 4As shown, the peeling unit 200 includes a second base 201, a peeling member 202 and a second moving platform member 203, the peeling member 202 and the second moving platform member 203 are both arranged on the second base 201, the second moving platform member 203 can deliver the ingot to the lower side of the peeling member 202, and the peeling member 202 can lift the wafer upward along the third direction. The ingot after laser irradiation is moved to the lower side of the peeling member 202 by the second moving platform member 203, the peeling member 202 is lowered and adsorbs the wafer on the ingot, and then the peeling member 202 and the wafer are lifted together to separate the wafer from the ingot. Further, the second moving platform member 203 includes a third moving module 2031 and a second stage 2032, the third moving module 2031 is arranged on the second base 201, and the second stage 2032 is arranged on the third moving module 2031 and can move along the first direction. The third moving module 2031 extends along the first direction.

[0054] Further, as shown in Figure 1 In combination Figure 5 As shown, the grinding unit 300 includes a third base 301, a grinding member 302 and a third moving platform member 303, the grinding member 302 and the third moving platform member 303 are both arranged on the third base 301, the third moving platform member 303 can deliver the ingot or wafer to the lower side of the grinding member 302, and the grinding member 302 can move close to or away from the third moving platform member 303 along the third direction. The wafer and ingot after peeling can be delivered to the third moving platform member 303 by the mechanical arm member 802 on the ring-shaped guide rail 801 and the transfer unit 400, when the ingot or wafer moves directly below the grinding assembly, the grinding member 302 is lowered and starts to grind the ingot or wafer. Exemplarily, the grinding unit 300 in the embodiment is provided with two, one of which is used for rough grinding of the surface, and the other is used for fine grinding of the surface, to meet the roughness requirements of the ingot or wafer surface. Further, the third moving platform member 303 includes a fourth moving module 3031 and a third stage 3032, the fourth moving module 3031 is arranged on the third base 301, and the third stage 3032 is arranged on the fourth moving module 3031 and can move along the first direction. The fourth moving module 3031 extends along the first direction.

[0055] Further, as shown in Figure 1 In combination Figure 6As shown, the handover unit 400 includes a seventh moving module 401, an eighth moving module 402, and an adsorption member 403. The seventh moving module 401 extends along a first direction. The eighth moving module 402 is arranged on the seventh moving module 401 and can move along the first direction. The adsorption member 403 is arranged on the eighth moving module 402 and can move along a third direction. The adsorption member 403 is used to adsorb the ingot or wafer. The seventh moving module 401 can be designed according to actual use requirements. The eighth moving module 402 extends along the third direction. The lower surface of the adsorption member 403 is provided with a vacuum adsorption hole for adsorbing the wafer or ingot, realizing contactless adsorption and carrying, reducing the risk of wafer cracking, and improving the yield. In some application scenarios, the wafer can be easily peeled off after laser irradiation. At this time, the peeling unit 200 does not need to be added, and the adsorption member 403 on the side of the laser irradiation unit 100 can be directly used to adsorb the wafer. Therefore, the peeling unit 200 can be removed in this case.

[0056] Further, as shown in Figure 1 In combination Figure 7 As shown, the buffer unit 500 includes a sixth base 501 and a fourth carrier 502 arranged on the sixth base 501. The new design of the buffer unit 500 avoids conflicts between processes and improves processing efficiency.

[0057] Further, as shown in Figure 1 As shown, the semiconductor processing system further includes an ingot storage unit 600 and a wafer storage unit 700. The ingot storage unit 600 is arranged at the feeding end of the processing production line. The wafer storage unit 700 is arranged at the discharging end of the processing production line. Specifically, as shown in Figure 1 In combination Figure 8 As shown, the ingot storage unit 600 includes a fourth base 601, a ninth moving module 602, and an ingot storage rack member 603. The ninth moving module 602 is arranged on the fourth base 601. The ingot storage rack member 603 is arranged on the ninth moving module 602 and can move along a third direction. The ingot storage rack member 603 is provided with a plurality of ingot storage spaces 6031 spaced apart along the third direction. As shown in Figure 1 In combination Figure 9As shown, the wafer storage unit 700 comprises a fifth base 701, a tenth moving module 702, a robot member 703, and a wafer storage structure member 704, wherein a plurality of wafer storage spaces 7041 are arranged in the wafer storage structure member 704 along a first direction, the tenth moving module 702 is arranged on the fifth base 701 and can move along the first direction, and the robot member 703 is arranged on the tenth moving module 702 and used to transfer the wafer from the robot member 802 to the wafer storage space 7041. For example, the moving module mentioned in the embodiment can be, but is not limited to, a screw slide module, a pneumatic cylinder, a hydraulic cylinder, etc., which is not limited here. In addition, other units can be added at the end of the processing production line to realize more abundant process requirements.

[0058] For example, the working principle of the semiconductor processing system in the embodiment is as follows:

[0059] 1. Laser irradiation processing:

[0060] 1) The wafer ingot storage unit 600 moves along the Z direction to a position suitable for loading by the first handling finger 8023, the first handling finger 8023 loads the wafer ingot and moves to the front of the laser irradiation unit 100.

[0061] 2) The first adsorption member 403 adsorbs the wafer ingot on the first handling finger 8023 and places it on the processing platform of the laser irradiation unit 100, and then the processing platform moves to the lower side of the laser generation member 102 to perform laser irradiation processing.

[0062] 3) The first handling finger 8023 returns to the wafer ingot storage unit 600 to load a new wafer ingot, and then moves to the front of the laser irradiation unit 100, the first adsorption member 403 adsorbs the wafer ingot and places it on the fourth carrier 502 of the first buffer unit 500.

[0063] 4) After the laser irradiation processing is completed, the processing platform of the laser irradiation unit 100 moves to a position suitable for adsorption by the first adsorption member 403, the first adsorption member 403 adsorbs the wafer ingot and places it on the second handling finger 8023.

[0064] 5) The first adsorption member 403 adsorbs the wafer ingot in the first buffer unit 500 and repeats the processing in step 1.

[0065] 2. Peeling processing:

[0066] 1) The second handling finger 8023 transfers the ingot to the front of the stripping unit 200, the second suction member 403 suctions the ingot on the second handling finger 8023 and places it on the second carrier 2032 of the stripping unit 200, the second carrier 2032 on the second base 201 then moves to the lower side of the stripping member 202 through the third moving module 2031 to perform the wafer and ingot stripping process.

[0067] 2) After the stripping process is completed, the processing platform of the stripping unit 200 moves to a position suitable for the second suction member 403 to suction, the second suction member 403 first suctions the wafer and places it on the third handling finger 8023.

[0068] 3) After the second suction member 403 returns to the stripping unit 200, it suctions the ingot again and places it on the fourth carrier 502 of the second buffer unit 500.

[0069] 4) The second handling finger 8023 returns to the vicinity of the laser irradiation unit 100 to wait for loading of a new ingot and repeats the process in step 2.

[0070] 3. Rough grinding process:

[0071] 1) The third handling finger 8023 transfers the wafer to the front of the first grinding unit 300 for rough grinding and flips the wafer by 180 degrees through the rotating shaft 8031 on the slider 803 to place the wafer on the fourth carrier 502 of the third buffer unit 500. The third handling finger 8023 has suction mechanisms such as vacuum nozzles (not shown in the figure), so the wafer will not fall after being flipped.

[0072] 2) The third suction member 403 suctions the wafer on the fourth carrier 502 of the third buffer unit 500 and places it on the third carrier 3032 of the first grinding unit 300, the third carrier 3032 moves to the lower side of the grinding member 302 on the third base 301 through the fourth moving module 3031 to perform the wafer rough grinding process.

[0073] 3) The third handling finger 8023 returns to the front of the stripping unit 200, the second suction member 403 suctions the ingot from the fourth carrier 502 of the second buffer unit 500 and places it on the third handling finger 8023, the third handling finger 8023 then transfers the ingot and places it on the fourth carrier 502 of the third buffer unit 500.

[0074] 5) After the ingot rough grinding process is completed, the third carrier 3032 of the grinding unit 300 moves to a position suitable for the third suction member 403 to suction on the third base 301 through the fourth moving module 3031, the third suction member 403 suctions the ingot and places it on the fourth handling finger 8023.

[0075] 4) The third suction member 403 suctions the ingot from the fourth carrier 502 of the third buffer unit 500 and places it on the third carrier 3032 of the grinding unit 300, which is moved by the fourth moving module 3031 to be directly below the grinding member 302 on the third base 301, to perform rough grinding of the ingot.

[0076] 5) After the rough grinding of the ingot is completed, the third carrier 3032 of the grinding unit 300 is moved to a position suitable for suction by the third suction member 403, which suctions the ingot and places it on the third carrier 3032 of the third buffer unit 500.

[0077] 6) The third transfer finger 8023 returns to the vicinity of the stripping unit 200 to wait for loading of a new wafer and repeats the processing in step 3.

[0078] 4. Fine grinding processing:

[0079] 1) The fourth transfer finger 8023 delivers the wafer to the front of the second grinding unit 300 for fine grinding.

[0080] 2) The fourth suction member 403 suctions the wafer on the fourth transfer finger 8023 and places it on the processing platform of the grinding unit 300, which is moved to be below the grinding member 302, to perform fine grinding of the wafer.

[0081] 3) The fourth transfer finger 8023 returns to the front of the rough grinding grinding unit 300, the third suction member 403 suctions the ingot from the third buffer unit 500 and places it on the fourth transfer finger 8023, which delivers the ingot and places it on the fourth buffer unit 500.

[0082] 6) After the fine grinding of the wafer is completed, the processing platform of the grinding unit 300 is moved to a position suitable for suction by the fourth suction member 403, which suctions the wafer and places it on the fifth transfer finger 8023.

[0083] 4) The fourth suction member 403 suctions the ingot from the fourth buffer unit 500 and places it on the processing platform of the grinding unit 300, which is moved to be below the grinding member 302, to perform fine grinding of the ingot.

[0084] 5) After the fine grinding of the ingot is completed, the processing platform of the grinding unit 300 is moved to a position suitable for suction by the fourth suction member 403, which suctions the ingot and places it on the fourth buffer unit 500.

[0085] 6) The fourth handling finger 8023 returns to the vicinity of the rough grinding grinding unit 300 to wait for loading of a new wafer, and repeats the processing in step 4.

[0086] 5. Wafer storage and ingot recovery:

[0087] 1) The fifth handling finger 8023 delivers the wafer to the wafer storage unit 700, the mechanical hand member 703 of the wafer storage unit 700 grabs the wafer from the fifth handling finger 8023 and places it into the wafer storage rack member 704, and the fifth handling finger 8023 returns to the vicinity of the fine grinding grinding unit 300.

[0088] 2) The fourth suction member 403 suctions the ingot and places it onto the fifth handling finger 8023, and the fifth handling finger 8023 delivers the ingot to the ingot storage unit 600 and stores it.

[0089] 3) The fifth handling finger 8023 returns to the vicinity of the fine grinding grinding unit 300 to wait for loading of a new wafer, and repeats the processing in step 5.

[0090] It should be noted that the above only the preferred embodiments of the present application and the use of technical principles. Those skilled in the art will understand that the present application is not limited to the specific examples described herein, those skilled in the art can be made various obvious changes, re-adjustment and replacement without departing from the scope of the present application. Therefore, although the above embodiments of the present application has been described in more detail, the present application is not limited to the above examples, without departing from the concept of the present application, but also includes more other equivalent embodiments, and the scope of the present application is determined by the appended claims.

Claims

1. A semiconductor processing system, characterized by, The application relates to a processing production line, which comprises a laser irradiation unit (100), a stripping unit (200) and at least one grinding unit (300), the laser irradiation unit (100), the stripping unit (200) and at least one grinding unit (300) are sequentially arranged along a processing station, and one side of the laser irradiation unit (100), the stripping unit (200) and the grinding unit (300) is provided with a transfer unit (400) and a buffer unit (500). The application further relates to a conveying production line (800), which comprises a ring-shaped guide rail (801), a sliding block (803) with a rotating shaft (8031) and a mechanical arm component (802), the ring-shaped guide rail (801) surrounds the periphery of the processing production line, the sliding block (803) is arranged on the ring-shaped guide rail (801) and can move along the ring-shaped guide rail (801), and the mechanical arm component (802) is arranged on the rotating shaft (8031), the mechanical arm component (802) is matched with the transfer unit (400) and is used for carrying a crystal ingot or a wafer to a target station. The mechanical arm component (802) comprises a fifth moving module (8021), a sixth moving module (8022) and a carrying finger (8023), the outer wall surface of the fifth moving module (8021) is connected with the rotating shaft (8031), the sixth moving module (8022) is arranged on the fifth moving module (8021) and can move along a third direction, and the carrying finger (8023) is arranged on the sixth moving module (8022) and can stretch and contract along a first direction.

2. The semiconductor processing system of claim 1, wherein, The laser irradiation unit (100) comprises a first machine base (101), a laser generating component (102) and a first moving platform component (103), the laser generating component (102) and the first moving platform component (103) are arranged on the first machine base (101), and the first moving platform component (103) can convey the crystal ingot to the lower side of a laser irradiation area of the laser generating component (102).

3. The semiconductor processing system of claim 1, wherein, The first moving platform component (103) comprises a first moving module (1031), a second moving module (1032) and a first carrier (1033), the first moving module (1031) is arranged on the first machine base (101), the second moving module (1032) is arranged on the first moving module (1031) and can move along a first direction, and the first carrier (1033) is arranged on the second moving module (1032) and can move along a second direction.

4. The semiconductor processing system of claim 3, wherein, The stripping unit (200) comprises a second machine base (201), a stripping component (202) and a second moving platform component (203), the stripping component (202) and the second moving platform component (203) are arranged on the second machine base (201), the second moving platform component (203) can convey the crystal ingot to the lower side of the stripping component (202), and the stripping component (202) can adsorb the wafer and lift along a third direction.

5. The semiconductor processing system of claim 1, wherein, ​ 6. The semiconductor processing system of claim 5, wherein, The second moving platform component (203) comprises a third moving module (2031) and a second carrier (2032), the third moving module (2031) is arranged on the second base (201), and the second carrier (2032) is arranged on the third moving module (2031) and can move in the first direction.

7. The semiconductor processing system of claim 1, wherein, The grinding unit (300) comprises a third base (301), a grinding component (302) and a third moving platform component (303), the grinding component (302) and the third moving platform component (303) are arranged on the third base (301), the third moving platform component (303) can deliver the crystal ingot or the wafer to the lower side of the grinding component (302), and the grinding component (302) can move close to or away from the third moving platform component (303) in a third direction.

8. The semiconductor processing system of claim 7, wherein, The third moving platform component (303) comprises a fourth moving module (3031) and a third carrier (3032), the fourth moving module (3031) is arranged on the third base (301), and the third carrier (3032) is arranged on the fourth moving module (3031) and can move in the first direction.

9. The semiconductor processing system of claim 1, wherein, The transfer unit (400) comprises a seventh moving module (401), an eighth moving module (402) and an adsorption component (403), the seventh moving module (401) extends in the first direction, the eighth moving module (402) is arranged on the seventh moving module (401) and can move in the first direction, and the adsorption component (403) is arranged on the eighth moving module (402) and can move in the third direction, and the adsorption component (403) is used for adsorbing the crystal ingot or the wafer.

10. The semiconductor processing system of any of claims 1-9, wherein, The semiconductor processing system further comprises: A crystal ingot storage unit (600) arranged at the feeding end of the processing production line; A wafer storage unit (700) arranged at the discharging end of the processing production line.

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