High-voltage ideal diode control circuit
By integrating power MOSFETs, gate amplifiers, charge pumps, and over-temperature protection circuits, the problems of high conduction losses and complex over-temperature protection in existing ideal diode controllers under high-voltage environments are solved, achieving stable operation and simplified design under high-voltage environments.
Patent Information
- Application Number
- CN202520368729.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-04
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2035-03-04
AI Technical Summary
Existing ideal diode controllers cannot meet the application requirements of high-voltage environments, and have problems such as high conduction loss, inability to dynamically adjust forward conduction voltage, need for external power devices, and complex over-temperature protection.
By employing integrated power MOSFETs, gate amplifiers, charge pumps, fast pull-down comparators, and over-temperature protection circuits, a wide operating range of 4V-600V is achieved. By dynamically adjusting the gate voltage of the power MOSFETs and over-temperature protection, external components are reduced and circuit design is simplified.
It achieves stable operation under high-voltage conditions, reduces conduction losses, reduces external components, simplifies circuit design, expands application scenarios, and has anti-reverse current and over-temperature protection functions.
Smart Images
Figure CN223843759U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor integrated circuit technology, and in particular to a high-voltage ideal diode control circuit. Background Technology
[0002] An ideal diode is a theoretical diode model that exhibits zero forward voltage drop and zero reverse leakage current. This means that under forward bias, an ideal diode consumes almost no electrical energy and generates no heat; while under reverse bias, its resistance is so high that it almost prevents current from flowing. The concept of an ideal diode is used in circuit design to help engineers understand and analyze diode behavior. Actual manufactured diodes cannot perfectly replicate the characteristics of an ideal diode; the term "ideal diode" usually refers to a diode with low forward voltage drop and low reverse leakage current.
[0003] However, current ideal diode controllers on the market consist only of a controller and an external power MOSFET. With the development of electronic power technology, the requirements for circuit miniaturization are becoming increasingly stringent. The existing ideal diode controller plus external MOSFET configuration cannot meet these requirements. Furthermore, due to process limitations, the operating voltage is only around 10V to 100V, making it unsuitable for higher voltage environments. Power devices need to be externally connected, and there is no over-temperature protection, increasing the difficulty and complexity of board-level design. Moreover, the conduction loss is between 25mV and 50mV, which is relatively large, causing a significant difference between the load power supply and the actual power supply. In addition, current ideal diode controllers use Schottky diodes for reverse protection, but due to the limited power consumption of Schottky diodes, they cannot be used in high-power applications. Furthermore, the forward conduction loss of circuits using Schottky diodes is too large, around 500mV, and the forward conduction voltage cannot be dynamically adjusted, changing with the magnitude of the load current.
[0004] In view of this, it is necessary to propose further improvements to the current structure. Utility Model Content
[0005] Therefore, the purpose of this utility model is to at least partially address the shortcomings of the prior art, thereby proposing a high-voltage ideal diode control circuit.
[0006] To achieve the above objectives, the present invention adopts the following technical solution:
[0007] This invention provides a high-voltage ideal diode control circuit, including a power MOSFET, a first input power supply, an output terminal, a gate amplifier, a charge pump, a fast pull-down comparator, and an over-temperature protection circuit. The power MOSFET, the fast pull-down comparator, and the over-temperature protection circuit are connected between the first input power supply and the output terminal. The power MOSFET is also connected to the gate amplifier and the fast pull-down comparator. The gate amplifier is connected to the charge pump.
[0008] Furthermore, the power MOSFET is an N-channel power MOSFET.
[0009] Furthermore, the power MOSFET includes a source, a drain, and a gate. An integrated diode is connected between the source and the drain of the power MOSFET. The source of the power MOSFET is connected to the first input power supply, the drain is connected to the output terminal, and the gate is connected to the gate amplifier.
[0010] Furthermore, it also includes a first NM transistor and a clamp, wherein the gate of the power MOSFET is connected to the clamp and the drain of the first NM transistor.
[0011] Furthermore, it also includes a first voltage source and a second voltage source. The gate amplifier further includes a first input pin, a second input pin, a non-inverting input terminal and an inverting input terminal, and a first output pin. The first input pin is connected to the charge pump, the second input pin is connected to a second input power supply, the output pin is connected to the gate of the power MOSFET, the clamp, and the drain of the first NM transistor, the non-inverting input terminal is connected to the negative terminal of the first voltage source, the first input power supply and the source of the first NM transistor, the clamp and the source of the power MOSFET, and the inverting input terminal is also connected to the positive terminal of the second voltage source.
[0012] Furthermore, the fast pull-down comparator includes a positive input terminal, a negative input terminal, and a second output pin. The second output pin is connected to the gate (g) of the first NM transistor. The negative input terminal is connected to the positive terminal of the first voltage source. The positive input terminal is connected to the negative terminal of the second voltage source, the drain of the power MOSFET, and the output terminal.
[0013] Furthermore, the first input power supply is connected to the clamp, the source terminal of the first NM transistor, the negative terminal of the first voltage source, the over-temperature protection circuit, and the output terminal.
[0014] Furthermore, it also includes a VDD terminal and a GND terminal, the output terminal is also connected to the negative terminal of the second voltage source and the VDD terminal, and the VDD terminal is also connected to the GND terminal.
[0015] Furthermore, the over-temperature protection circuit includes a bipolar transistor connected to the power MOSFET, a first current source, a second current source, a first resistor, a second resistor, a first comparator, a second NM transistor, a Schmitt trigger, a first inverter, a second inverter, and a third inverter. The emitter of the bipolar transistor is connected to the first current source, and its base and collector are connected. The collector is connected to the first resistor and the source (s) terminal of the second NM transistor and grounded. The first resistor is connected to the second resistor and the drain (d) terminal of the second NM transistor. The gate (g) terminal of the second NM transistor is connected to the first inverter and the second inverter. The first current source is also connected to the second current source and the positive input terminal of the first comparator. The second current source is connected to the second resistor and the negative input terminal of the first comparator. The second resistor is also connected to the negative input terminal of the first comparator. The output terminal of the first comparator is connected to the Schmitt trigger. The Schmitt trigger is also connected to the first inverter. The first inverter is connected to the second inverter, and the second inverter is connected to the third inverter.
[0016] Furthermore, both the first voltage source and the second voltage source are 15mV voltage sources.
[0017] This invention provides a high-voltage ideal diode control circuit, including a power MOSFET, a first input power supply, an output terminal, a gate amplifier, a charge pump, a fast pull-down comparator, and an over-temperature protection circuit. The power MOSFET, fast pull-down comparator, and over-temperature protection circuit are connected between the first input power supply and the output terminal. The power MOSFET is also connected to the gate amplifier and the fast pull-down comparator, and the gate amplifier is connected to the charge pump. By incorporating a power MOSFET, an over-temperature protection circuit, a gate amplifier, a charge pump, and a fast pull-down comparator, this high-voltage ideal diode control circuit provides over-temperature protection and reverse current protection. This eliminates the need for an external over-temperature protection module and reduces power supply redundancy or external components for reverse protection circuits. Therefore, this control circuit is simple to design, requires fewer external components, and saves costs. Furthermore, the circuit has a wide operating voltage range of 4V-600V, expanding its application range. Attached Figure Description
[0018] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0019] Figure 1 This is a schematic diagram of the circuit structure of the high-voltage ideal diode control circuit of this utility model;
[0020] Figure 2 This is the over-temperature protection circuit diagram of the high-voltage ideal diode control circuit of this utility model.
[0021] The reference numerals in the figure are as follows: 1. Power MOSFET; 2. Gate amplifier; 3. Charge pump; 4. Fast pull-down comparator; 5. Over-temperature protection circuit; 6. First NM transistor; 7. Clamp; 8. First voltage source; 9. Second voltage source. Detailed Implementation
[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0023] It should be noted that the descriptions involving "first," "second," etc., in this utility model are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. If the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this utility model.
[0024] Please refer to Figure 1 This utility model provides a high-voltage ideal diode control circuit, including a power MOSFET 1, a first input power supply, an output terminal, a gate amplifier 2, a charge pump 3, a fast pull-down comparator 4, and an over-temperature protection circuit 5. The power MOSFET 1, the fast pull-down comparator 4, and the over-temperature protection circuit 5 are connected between the first input power supply and the output terminal. The power MOSFET 1 is also connected to the gate amplifier 2 and the fast pull-down comparator 4. The gate amplifier 2 is connected to the charge pump 3.
[0025] Currently, the operating voltage of ideal diode control circuits on the market is only around 10V-100V, making them unsuitable for environments with lower or higher voltages. Furthermore, power devices require external connection, and there is no over-temperature protection or reverse current protection, increasing the difficulty and complexity of circuit design. Conduction losses are also significant, ranging from 25mV to 50mV, resulting in a large discrepancy between the load power supply and the actual power supply. While commercially available high-voltage ideal diode control circuits achieve reverse protection using Schottky diodes, these circuits suffer from high forward conduction losses, exceeding 500mV, and cannot dynamically adjust the forward conduction voltage, which varies with the load current. Additionally, the power dissipation of Schottky diodes is limited, making them unsuitable for high-power applications.
[0026] The high-voltage ideal diode control circuit in this embodiment integrates a power MOSFET 1, which has a wide operating range of 4V-600V. The 4V operating range is particularly important in low-voltage applications where diode voltage drop is intolerable, while the 600V rating allows it to operate in automotive environments and withstand transients, thus expanding its application range. It also reduces the need for external components in power supply redundancy or reverse protection circuits, thereby achieving miniaturization. Furthermore, the gate amplifier 2 connected to the power MOSFET 1 and the charge pump 3 connected to it can dynamically adjust the gate voltage of the power MOSFET 1, maintaining the voltage drop across the power MOSFET 1 at 15mV. This not only prevents reverse DC current but also ensures smooth switching during redundant power supply applications, avoiding device burnout. The 15mV forward voltage also brings the load power supply closer to the power supply voltage.
[0027] Specifically, the fast pull-down comparator 4 connected to power MOSFET 1 detects reverse current by detecting the voltage drop across power MOSFET 1. When the voltage across power MOSFET 1 exceeds -15mV, the fast pull-down comparator 4 turns off power MOSFET 1, thus achieving reverse power supply protection.
[0028] Since the high-voltage ideal diode control circuit integrates a power MOSFET 1, which generates heat during operation, an over-temperature protection circuit 5 is connected in the control circuit. When an over-temperature condition occurs, the over-temperature protection circuit 5 will quickly shut down the fast pull-down comparator 4, the gate amplifier 2, and the charge pump 3, thereby pulling down the gate voltage of the power MOSFET 1 and turning off the power MOSFET 1 to avoid burning out the device.
[0029] Specifically, the high-voltage ideal diode control circuit includes a first input power supply IN1 and an output terminal OUT. The first input power supply IN1 and the output terminal OUT are connected to the two ends of the power MOSFET 1, thereby driving the power MOSFET 1 to conduct. The gate amplifier 2 connected to the power MOSFET 1 and the charge pump 3 connected to it are used to adjust the gate voltage of the power MOSFET 1 and keep it at 15mV. That is, the control circuit in this embodiment can achieve a wide operating voltage of 4-600V by integrating the power MOSFET 1, the gate amplifier 2, the charge pump 3, the fast pull-down comparator 4, and the over-temperature protection circuit. It also has reverse current protection and over-temperature protection, eliminating the need for external over-temperature protection and reverse current protection, which facilitates miniaturization and saves costs. Moreover, the circuit structure of this control circuit is simple, with few external components and extremely low power consumption, which can be controlled within 0.2mA.
[0030] The first input power supply IN1 is connected to the clamp 7, the source terminal of the first NM transistor 6, the negative terminal of the first voltage source 8, the over-temperature protection circuit 5, and the output terminal OUT; the output terminal OUT is also connected to the negative terminal of the second voltage source 9 and the VDD terminal, and the VDD terminal is also connected to the GND terminal.
[0031] Furthermore, the power MOSFET 1 is an N-channel power MOSFET 1. The N-channel power MOSFET 1 has a larger current capacity per unit size, which can be used in higher power applications.
[0032] Furthermore, the power MOSFET 1 includes a source, a drain, and a gate. An integrated diode is also connected between the source and the drain of the power MOSFET 1. The source of the power MOSFET 1 is connected to the first input power supply, the drain is connected to the output terminal, and the gate is connected to the gate amplifier 2.
[0033] In this embodiment, the source of power MOSFET 1 is connected to the first input power supply IN1, which acts as the anode of a diode, while the drain of power MOSFET 1 is connected to the output terminal OUT, which acts as the cathode of a diode. Upon initial power-on, the load current flowing from the first input power supply IN1 to the output terminal OUT first flows through the body diode D1 of the MOSFET. The high-voltage ideal diode control circuit detects the voltage drop across the first input power supply IN1 and the output terminal OUT, and drives power MOSFET 1 to conduct.
[0034] Furthermore, it also includes a first NM transistor 6 and a clamp 7. The gate of the power MOSFET 1 is also connected to the clamp 7 and the drain (d) terminal of the first NM transistor 6. The clamp 7 is connected to the gate of the power MOSFET 1 to protect the gate of the power MOSFET 1 from being broken down.
[0035] Furthermore, it also includes a first voltage source 8 and a second voltage source 9. The gate amplifier 2 also includes a first input pin, a second input pin, a non-inverting input terminal and an inverting input terminal, and a first output pin. The first input pin is connected to a charge pump 3. The second input pin is connected to a second input power supply IN2. The output pin is connected to the gate of the power MOSFET 1, the clamp 7, and the drain of the first NM transistor 6. The non-inverting input terminal is connected to the negative terminal of the first voltage source 8, the first input power supply IN1, the source of the first NM transistor 6, the clamp 7, and the source of the power MOSFET 1. The inverting input terminal is also connected to the positive terminal of the second voltage source 9.
[0036] In this embodiment, gate amplifier 2 and charge pump 3 attempt to maintain the voltage drop across power MOSFET 1 at 15mV. If the load current flowing from the first input power supply IN1 to the output terminal OUT causes the voltage drop to exceed 15mV, gate amplifier 2 and charge pump 3 will raise the gate voltage of power MOSFET 1 to fully turn it on. If the load current decreases, gate amplifier 2 and charge pump 3 will lower the gate voltage of power MOSFET 1 to maintain a voltage drop of 15mV. If the load current decreases to a level that cannot support 15mV, gate amplifier 2 will drive power MOSFET 1 to turn off. Gate amplifier 2 and charge pump 3 dynamically adjust the gate voltage of power MOSFET 1 according to the voltage drop across it, thereby maintaining the voltage drop at 15mV. This not only prevents reverse DC current but also ensures smooth switching during redundant power supply applications, avoiding device burnout. The forward voltage drop is determined by the on-resistance R of power MOSFET 1. DS(ON) ×I 负载 We obtain R DS(ON) I is the on-resistance of power MOSFET 1. 负载 This is the load current through power MOSFET 1.
[0037] The first voltage source 8 and the second voltage source 9 provide a 15mV voltage reference for the gate amplifier 2 and the fast pull-down comparator 4, respectively. Both the first voltage source 8 and the second voltage source 9 are 15mV voltage sources.
[0038] Furthermore, the fast pull-down comparator 4 includes a positive input terminal, a negative input terminal, and a second output pin. The second output pin is connected to the gate of the first NM transistor 6, the negative input terminal is connected to the positive terminal of the first voltage source 8, and the positive input terminal is connected to the negative terminal of the second voltage source 9, the drain of the power MOSFET 1, and the output terminal.
[0039] In this embodiment, when a load connected to the first input power supply IN1 and the output terminal OUT fails, a reverse current is likely to flow to the first input power supply IN1. At this time, the fast pull-down comparator 4 detects the reverse current by detecting the voltage drop across the power MOSFET 1. When the voltage across the power MOSFET 1 exceeds -15mV, the fast pull-down comparator 4 will quickly pull down the gate voltage of the power MOSFET 1 through the first NM transistor 6, turning off the power MOSFET 1, thus achieving reverse power supply protection.
[0040] Furthermore, the over-temperature protection circuit 5 includes a bipolar transistor Q1 connected to the power MOSFET 1, a first current source I1, a second current source I2, a first resistor R1, a second resistor R2, a first comparator COM, a second NM transistor M1, a Schmitt trigger ST, a first inverter INV1, a second inverter INV2, and a third inverter INV3. The emitter of the bipolar transistor Q1 is connected to the first current source I1, and its base and collector are connected. The collector is connected to the source (s) of the first resistor R1 and the second NM transistor M1 and grounded. The first resistor R1 is connected to the source (d) of the second resistor R2 and the second NM transistor M1. The gate of the second NM transistor M1 is connected to the first inverter INV1 and the second inverter INV2. The first current source I1 is also connected to the second current source I2 and the positive input terminal of the first comparator COM. The second current source I2 is connected to the second resistor R2 and the negative input terminal of the first comparator COM. The second resistor R2 is also connected to the negative input terminal of the first comparator COM. The output terminal of the first comparator COM is connected to the Schmitt trigger ST. The Schmitt trigger ST is also connected to the first inverter INV1. The first inverter INV1 is connected to the second inverter INV2. The second inverter INV2 is connected to the third inverter INV3.
[0041] In this embodiment, the over-temperature protection circuit works by sampling the temperature using the Vbe voltage (the voltage between the base and emitter) of the bipolar transistor Q1. Because Vbe's negative temperature characteristic has good linearity, and its temperature characteristic is typically around -2mV / ℃, changes in Vbe voltage can be used to explain temperature changes. The currents in the first current source I1 and the second current source I2 in the circuit are both PTAT (Proportional to Absolute Temperature Current). PTAT current is a current proportional to absolute temperature, meaning its magnitude changes with temperature. It is commonly used in circuit designs requiring temperature compensation. The purpose of the PTAT current design is to provide a current linearly related to temperature, allowing for adjustments when the temperature changes, thereby maintaining the circuit's stability and accuracy. The first resistor R1 and the second NM transistor M1 form positive feedback, achieving temperature hysteresis.
[0042] Specifically, the over-temperature protection circuit in this embodiment connects the VB voltage point with a positive temperature coefficient to the Vbe voltage of the bipolar transistor Q1 (i.e., Figure 2 The voltage VC of the first comparator COM is compared with the voltage VA in the circuit. Then, the output voltage VC of the first comparator COM is passed through the Schmitt trigger ST, the first inverter INV1, the second inverter INV2, and the third inverter INV3 to obtain a low-level active OTP signal, thereby realizing over-temperature protection for the drive circuit. In addition, the bipolar transistor Q1 of the over-temperature protection circuit is connected to the power MOSFET 1 to increase the sensitivity to temperature.
[0043] This invention provides a high-voltage ideal diode control circuit, including a power MOSFET, a first input power supply, an output terminal, a gate amplifier, a charge pump, a fast pull-down comparator, and an over-temperature protection circuit. The power MOSFET, fast pull-down comparator, and over-temperature protection circuit are connected between the first input power supply and the output terminal. The power MOSFET is also connected to the gate amplifier and the fast pull-down comparator, and the gate amplifier is connected to the charge pump. By incorporating a power MOSFET, an over-temperature protection circuit, a gate amplifier, a charge pump, and a fast pull-down comparator, this high-voltage ideal diode control circuit provides over-temperature protection and reverse current protection. This eliminates the need for an external over-temperature protection module and reduces power supply redundancy or external components for reverse protection circuits. Therefore, this control circuit is simple to design, requires fewer external components, and saves costs. Furthermore, the circuit has a wide operating voltage range of 4V-600V, expanding its application range.
[0044] It should be noted that the various embodiments in this utility model are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0045] It should also be noted that, in the present invention, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0046] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined in the present invention may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A high-voltage ideal diode control circuit, characterized in that, The device includes a power MOSFET, a first input power supply, an output terminal, a gate amplifier, a charge pump, a fast pull-down comparator, and an over-temperature protection circuit. The power MOSFET, the fast pull-down comparator, and the over-temperature protection circuit are connected between the first input power supply and the output terminal. The power MOSFET is also connected to the gate amplifier and the fast pull-down comparator. The gate amplifier is connected to the charge pump.
2. The high-voltage ideal diode control circuit according to claim 1, characterized in that, The power MOSFET is an N-channel power MOSFET.
3. The high-voltage ideal diode control circuit according to claim 1, characterized in that, The power MOSFET includes a source, a drain, and a gate. An integrated diode is connected between the source and the drain of the power MOSFET. The source of the power MOSFET is connected to the first input power supply, the drain is connected to the output terminal, and the gate is connected to the gate amplifier.
4. The high-voltage ideal diode control circuit according to claim 3, characterized in that, It also includes a first NM transistor and a clamp, wherein the gate of the power MOSFET is connected to the clamp and the drain of the first NM transistor.
5. The high-voltage ideal diode control circuit according to claim 4, characterized in that, It also includes a first voltage source and a second voltage source. The gate amplifier further includes a first input pin, a second input pin, a non-inverting input terminal and an inverting input terminal, and a first output pin. The first input pin is connected to the charge pump. The second input pin is connected to a second input power supply. The output pin is connected to the gate, clamp, and drain of the power MOSFET. The non-inverting input terminal is connected to the negative terminal of the first voltage source, the first input power supply, the source terminal of the first NMOSFET, the clamp, and the source of the power MOSFET. The inverting input terminal is also connected to the positive terminal of the second voltage source.
6. The high-voltage ideal diode control circuit according to claim 5, characterized in that, The fast pull-down comparator includes a positive input terminal, a negative input terminal, and a second output pin. The second output pin is connected to the gate (g) of the first NMOSFET. The negative input terminal is connected to the positive terminal of the first voltage source. The positive input terminal is connected to the negative terminal of the second voltage source, the drain of the power MOSFET, and the output terminal.
7. The high-voltage ideal diode control circuit according to claim 5, characterized in that, The first input power supply is connected to the clamp, the source terminal of the first NM transistor, the negative terminal of the first voltage source, the over-temperature protection circuit, and the output terminal.
8. The high-voltage ideal diode control circuit according to claim 5, characterized in that, It also includes a VDD terminal and a GND terminal. The output terminal is also connected to the negative terminal of the second voltage source and the VDD terminal, and the VDD terminal is also connected to the GND terminal.
9. The high-voltage ideal diode control circuit according to claim 1, characterized in that, The over-temperature protection circuit includes a bipolar transistor connected to the power MOSFET, a first current source, a second current source, a first resistor, a second resistor, a first comparator, a second NM transistor, a Schmitt trigger, a first inverter, a second inverter, and a third inverter. The emitter of the bipolar transistor is connected to the first current source, and its base and collector are connected. The collector is connected to the first resistor and the source (s) terminal of the second NM transistor and grounded. The first resistor is connected to the second resistor and the drain (d) terminal of the second NM transistor. The gate (g) terminal of the second NM transistor is connected to the first inverter and the second inverter. The first current source is also connected to the second current source and the positive input terminal of the first comparator. The second current source is connected to the second resistor and the negative input terminal of the first comparator. The second resistor is also connected to the negative input terminal of the first comparator. The output terminal of the first comparator is connected to the Schmitt trigger. The Schmitt trigger is also connected to the first inverter. The first inverter is connected to the second inverter, and the second inverter is connected to the third inverter.
10. The high-voltage ideal diode control circuit according to claim 5, characterized in that, Both the first voltage source and the second voltage source are 15mV voltage sources.