Production equipment for manufacturing diamond substrate

Abstract

The utility model discloses production equipment for manufacturing a diamond substrate, which comprises MPCVD equipment, a positioning mechanism is fixedly arranged at the center of the upper surface in a reaction cavity of the MPCVD equipment, and the upper surface of the positioning mechanism can be used for placing the substrate and clamping the substrate, so that the substrate can be placed on the upper surface of the positioning mechanism in the operation process of the MPCVD equipment. The situation that the substrate cannot be located at a proper growth position due to substrate displacement caused by plasma impact generated by gas flow and microwave excitation and the like can be avoided. Through the design of the positioning mechanism, various substrates with different sizes can be clamped, both small-size test substrates and large-size industrial production substrates can be stably clamped, the universality and flexibility of the equipment are improved, and the production efficiency is improved. And the cost and time for replacing the positioning device due to the size change of the substrate are reduced.

Description

Technical Field

[0001] This utility model relates to the field of diamond substrate manufacturing technology, specifically to a production equipment for manufacturing diamond substrates. Background Technology

[0002] In the current era of rapid development in materials science and technology, diamond substrates occupy a key position in many high-end industrial fields due to their excellent physicochemical properties. Whether it is the pursuit of superior performance in high-power electronic devices, the cutting-edge exploration of quantum information technology, or the innovative applications of ultra-precision optical components and biomedical sensors, the unique advantages of diamond substrates make them an indispensable foundation. Microwave plasma chemical vapor deposition (MPCVD) technology has always been an important means of preparing diamond substrates.

[0003] For example, the national authorized patent announcement number CN222631617U discloses a deposition stage for preparing polycrystalline diamond films, belonging to the field of chemical vapor deposition technology. The stage includes a deposition stage body; a positioning groove for inserting a substrate is provided on the top of the deposition stage body; an annular isolation groove is provided at the bottom edge of the positioning groove; the annular isolation groove is used to isolate the edge of the substrate placed in the positioning groove from the deposition stage body. By creating a positioning groove on the top of the deposition stage body for inserting the substrate, the substrate can be positioned and installed. The annular isolation groove at the bottom edge of the positioning groove isolates the edge of the inserted substrate from the deposition stage body, preventing the substrate edge from contacting the deposition stage body. This effectively avoids the "edge effect" of microwave discharge on the substrate temperature, ensuring a small temperature difference between the edge and center of the deposition stage and substrate, achieving the temperature requirements for preparing diamond films of the same grade.

[0004] Then, the aforementioned deposition stage for preparing polycrystalline diamond films clamps the substrate in a positioning groove when it is positioned. The size of the positioning groove is fixed and cannot be changed, so it can only be used for substrates of a specific size. For substrates of different sizes, it is necessary to change the deposition stage of different specifications, which increases the equipment cost and the complexity of operation. In actual production, if it is necessary to prepare polycrystalline diamond films of different sizes, it will reduce production efficiency and limit the flexibility of production. Utility Model Content

[0005] The purpose of this invention is to provide a production equipment for manufacturing diamond substrates, in order to solve the problem mentioned in the background art that different deposition stages of different sizes are required for substrates of different sizes, thereby increasing equipment costs and operational complexity.

[0006] To achieve the above objectives, this utility model provides the following technical solution:

[0007] A production apparatus for manufacturing diamond substrates includes an MPCVD (Multi-Level Chemical Vapor Deposition) device. A positioning mechanism is fixedly installed at the center of the upper surface of the reaction chamber of the MPCVD device. The upper surface of the positioning mechanism can accommodate and clamp the substrate, thereby preventing substrate displacement caused by gas flow and plasma impact generated by microwave excitation during the operation of the MPCVD device, which would prevent the substrate from being in a suitable growth position.

[0008] The positioning mechanism includes a connecting cylinder, which is fixedly installed on the upper surface of the reaction chamber. A conical disc is fixedly installed on the upper surface of the connecting cylinder. A limiting ring is fixedly installed inside the conical disc. A limiting disk is rotatably installed inside the limiting ring. Four sets of guide arc strips are fixedly installed on the upper surface of the limiting disk. A guide post is slidably installed in each of the four sets of guide arc strips. The upper surface of the guide post slides through a guide groove opened on the upper surface of the placement disk. The placement disk is fixedly installed inside the conical disc.

[0009] An arc clamp is fixedly installed on the upper surface of the guide post, and the arc clamp slides against the surface of the placement plate. A guide rail block is fixedly installed on the lower surface of the arc clamp, and the guide rail block slides in the guide groove.

[0010] The guide arc strip can be pulled and pushed by the rotation of the limiting plate to four sets of guide columns, causing the arc clamp to slide synchronously towards the center on the surface of the placement plate.

[0011] A tube is fixedly installed on the lower surface of the limiting plate. The tube is rotatably installed inside the connecting cylinder. A push handle is fixedly installed on the outer surface of the tube. The push handle slides out from the sliding strip opening, which is located on the outer surface of the connecting cylinder.

[0012] A torsion spring is fixedly connected to the upper surface of the inner tube, and the lower surface of the torsion spring is fixedly connected to the lower surface of the connecting cylinder.

[0013] Compared with the prior art, the beneficial effects of this utility model are:

[0014] 1. Through the design of the MPCVD equipment 1, reaction chamber 101, and positioning mechanism 2, during use, the substrate can be placed on the upper surface of the positioning mechanism 2 inside the reaction chamber 101. The positioning mechanism 2 then automatically retracts towards the center using its own torsional force, pushing the substrate to the center of the reaction chamber 101 and clamping it inside. The size of the clamping space can be changed by sliding from the radial direction of the large opening to the center, allowing it to accommodate substrates of various sizes. Whether it is a small experimental substrate or a large industrial production substrate, it can be stably clamped, improving the versatility and flexibility of the equipment and reducing costs. To reduce the cost and time associated with replacing positioning devices due to substrate size changes, this method ensures the substrate remains fixed in a complex reaction environment, allowing diamond to grow continuously and stably on the substrate surface. This provides a reliable guarantee for the production of high-quality diamond substrates. The reaction chamber 101 can then be sealed closed, and a specific ratio of reaction gas, such as a mixture of methane and hydrogen, is precisely delivered into the reaction chamber 101 through a gas supply system. Subsequently, microwave energy generated by a microwave source is coupled into the reaction chamber 101 via a microwave antenna or coupler. Under the influence of the high-frequency electric field of the microwaves... The molecules in the reaction gas are ionized to form plasma. At this time, the reaction chamber 101 presents a high-temperature, high-energy plasma environment, with temperatures reaching thousands of degrees Celsius. Under such extreme conditions, the carbon-hydrogen bonds in the methane molecules are broken, and carbon atoms are released. The carbon atoms dissociated from the methane molecules have high activity in the plasma environment. Under the influence of thermal motion and the electric and magnetic fields in the plasma, these carbon atoms migrate to the substrate surface. When the carbon atoms reach the substrate surface, a series of complex chemical reactions and physical adsorption processes occur. Some carbon atoms are adsorbed and deposited on the substrate surface. During this process, hydrogen can etch away some unstable carbon clusters or carbon clusters that do not conform to the diamond crystal structure on the substrate surface, ensuring that only carbon atoms that conform to the diamond crystal structure can continue to grow. Over time, the carbon atoms deposited on the substrate surface accumulate and grow gradually according to the diamond crystal structure. Under suitable process parameters such as temperature, pressure, and gas flow rate, carbon atoms continuously accumulate on the basis of the existing crystal structure, gradually forming a diamond film, which continues to thicken, and finally grows into the desired diamond substrate.

[0015] 2. Through the design of the tube 206, torsion spring 213, guide arc strip 209, placement plate 205, limiting plate 207, and guide groove 210, during use, the operator can pull the push handle 208 to rotate the tube 206 inside the connecting cylinder 202. During rotation, the tube 206 also rotates the torsion spring 213, which applies a reverse torsional force to the tube 206. The rotating connecting cylinder 202 then rotates the guide arc strip 209 on the upper surface of the limiting plate 207. This rotation of the guide arc strip 209 pulls the internally sliding guide post 214, causing the guide rail block 212 on the upper surface to open on the surface of the placement plate 205. The guide groove 210 is designed to slide outward horizontally, allowing the guide block 212 to slide outward along with the upper surface arc clamp 211 on the surface of the placement tray 205. This allows the operator to place the substrate on the upper surface of the placement tray 205 within the reaction chamber 101. Then, the push handle 208 can be released, allowing the tube 206 to be pushed by the reversing force applied by the torsion spring 213. This force causes the guide arc strip 209 to pull the internally sliding guide post 214, causing the upper surface guide block 212 to slide inward horizontally within the guide groove 210 on the surface of the placement tray 205. This inward sliding guide block 212, along with the upper surface arc clamp 211, pushes the substrate to the center of the placement tray 205 until it is fully extended. After the substrate is pushed to the center, the arc clamps 211 can contact the outer surface of the substrate to clamp it. For irregular substrates, at least two sets of arc clamps 211 can press them inward, allowing the contact points and clamping force distribution to automatically adjust according to the contour of the irregular substrate during the inward sliding process. For example, for oddly shaped substrates, each arc clamp 211 can independently adapt to different parts of the substrate, ensuring stable clamping of the substrate from at least two directions. This solves the problem that traditional fixing fixtures cannot handle irregular shapes, and broadens the range of substrates applicable to the equipment. The synchronous sliding pushing action is crucial for the growth of diamond substrates in the MPCVD equipment 1, ensuring that the substrate is always in a state of equilibrium during the reaction process. By positioning the substrate in the optimal location, the uneven growth environment caused by positional deviations can be avoided, which in turn affects the growth quality of the diamond film. This helps to produce high-quality, stable diamond substrates. The process only requires the operator to simply pull the push handle 208 to easily control the rotation of the tube 206, thereby driving a series of components to work together to achieve the outward expansion of the arc clamp 211. This operation method is simple and intuitive, greatly saving time and effort in placing the substrate. When the substrate needs to be placed, the placement space is quickly opened. After placement, releasing the push handle 208 will automatically fix the substrate without additional complicated fixing steps, which significantly improves work efficiency. It is especially suitable for production scenarios that require frequent substrate changes. Attached Figure Description

[0016] Figure 1This is a schematic diagram of the overall structure of the production equipment for manufacturing diamond substrates according to this utility model;

[0017] Figure 2 This is a schematic diagram of the substrate of this utility model being held by a positioning mechanism;

[0018] Figure 3 This is a schematic diagram of the positioning mechanism of this utility model;

[0019] Figure 4 This is a schematic diagram of the structure of the guide arc strip and guide column of this utility model.

[0020] In the diagram: 1. MPCVD equipment; 101. Reaction chamber; 2. Positioning mechanism; 201. Conical disc; 202. Connecting cylinder; 203. Sliding strip opening; 204. Limiting ring; 205. Placement plate; 206. Tube; 207. Limiting disc; 208. Push handle; 209. Guide arc strip; 210. Guide groove; 211. Arc clamp; 212. Guide block; 213. Torsion spring; 214. Guide column. Detailed Implementation

[0021] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0022] like Figures 1-2 As shown, this embodiment provides a production equipment for manufacturing diamond substrates, including: an MPCVD equipment 1. A positioning mechanism 2 is fixedly installed at the center of the upper surface of the reaction chamber 101 of the MPCVD equipment 1. The upper surface of the positioning mechanism 2 can accommodate the substrate and clamp it inside, so that during the operation of the MPCVD equipment 1, the substrate displacement caused by gas flow and plasma impact generated by microwave excitation can be avoided, which would prevent the substrate from being in a suitable growth position.

[0023] Through the design of the MPCVD equipment 1, reaction chamber 101, and positioning mechanism 2, during use, the substrate can be placed on the upper surface of the positioning mechanism 2 inside the reaction chamber 101. The positioning mechanism 2 then automatically retracts towards the center using its own torsional force, pushing the substrate to the center of the reaction chamber 101 and clamping it inside. The size of the clamping space can be changed by sliding from the radial direction of the large opening to the center, allowing it to accommodate substrates of various sizes. Whether it is a small experimental substrate or a large industrial production substrate, it can be stably clamped, improving the versatility and flexibility of the equipment and reducing the risk of damage caused by factors such as... The cost and time associated with replacing positioning devices due to substrate size changes are mitigated. Ensuring the substrate remains fixed in a complex reaction environment allows for continuous and stable diamond growth on the substrate surface, providing a reliable guarantee for the production of high-quality diamond substrates. Subsequently, the reaction chamber 101 can be sealed, and a specific ratio of reaction gas, such as a mixture of methane and hydrogen, is precisely delivered into the reaction chamber 101 through a gas supply system. Then, microwave energy generated by a microwave source is coupled into the reaction chamber 101 via a microwave antenna or coupler. Under the influence of the high-frequency electric field of the microwaves, the diamond... When the molecules in the gas are ionized to form plasma, the reaction chamber 101 presents a high-temperature, high-energy plasma environment, with temperatures reaching thousands of degrees Celsius. Under such extreme conditions, the carbon-hydrogen bonds in the methane molecules are broken, and carbon atoms are released. The carbon atoms dissociated from the methane molecules are highly reactive in the plasma environment. Under the influence of thermal motion and the electric and magnetic fields in the plasma, these carbon atoms migrate to the substrate surface. When the carbon atoms reach the substrate surface, a series of complex chemical reactions and physical adsorption processes occur. Some carbon atoms are adsorbed and deposited on the substrate surface. During this process, hydrogen can etch away some unstable carbon clusters or carbon clusters that do not conform to the diamond crystal structure on the substrate surface, ensuring that only carbon atoms that conform to the diamond crystal structure can continue to grow. Over time, the carbon atoms deposited on the substrate surface accumulate and gradually grow according to the diamond crystal structure. Under suitable process parameters such as temperature, pressure, and gas flow rate, carbon atoms continuously accumulate on the basis of the existing crystal structure, gradually forming a diamond film, which continues to thicken, and finally grows into the desired diamond substrate.

[0024] like Figures 3-4As shown, the positioning mechanism 2 includes a connecting cylinder 202, which is fixedly installed on the upper surface of the reaction chamber 101. A conical disc 201 is fixedly installed on the upper surface of the connecting cylinder 202. A limiting ring 204 is fixedly installed inside the conical disc 201. A limiting disk 207 is rotatably installed inside the limiting ring 204. Four sets of guide arc strips 209 are fixedly installed on the upper surface of the limiting disk 207. Guide posts 214 are slidably installed in each of the four sets of guide arc strips 209. The upper surface of the guide posts 214 slides through the guide groove 210 opened on the upper surface of the placement disk 205. The placement disk 205 is fixedly installed inside the conical disc 201.

[0025] An arc clamp 211 is fixedly installed on the upper surface of the guide post 214. The arc clamp 211 slides against the surface of the placement plate 205. A guide rail block 212 is fixedly installed on the lower surface of the arc clamp 211. The guide rail block 212 slides in the guide groove 210.

[0026] The guide arc strip 209 can be pulled and pushed by the rotation of the limiting plate 207 to drive the four sets of guide columns 214 to move the arc clamp 211 synchronously towards the center on the surface of the placement plate 205.

[0027] A cylindrical tube 206 is fixedly installed on the lower surface of the limiting plate 207. The cylindrical tube 206 is rotatably installed inside the connecting tube 202. A push handle 208 is fixedly installed on the outer surface of the cylindrical tube 206. The push handle 208 slides out from the sliding bar opening 203. The sliding bar opening 203 is opened on the outer surface of the connecting tube 202.

[0028] A torsion spring 213 is fixedly connected to the upper surface of the inner tube 206, and the lower surface of the torsion spring 213 is fixedly connected to the lower surface of the connecting tube 202.

[0029] Through the design of the tube 206, torsion spring 213, guide arc strip 209, placement plate 205, limiting plate 207, and guide groove 210, during use, the operator can pull the push handle 208 to rotate the tube 206 inside the connecting cylinder 202. During this rotation, the tube 206 also rotates the torsion spring 213, which applies a reverse torsional force to the tube 206. This, in turn, causes the connecting cylinder 202 to rotate the guide arc strip 209 on the upper surface of the limiting plate 207. The rotating guide arc strip 209 then pulls the internally sliding guide post 214, causing the guide rail block 212 on the upper surface to be positioned on the surface of the placement plate 205. The guide groove 210 slides horizontally outward, allowing the guide block 212 to slide outward along with the upper surface arc clamp 211 on the surface of the placement tray 205. This allows the operator to place the substrate on the upper surface of the placement tray 205 within the reaction chamber 101. Then, the push handle 208 can be released, allowing the tube 206 to be pushed by the reversing force applied by the torsion spring 213. This force causes the guide arc strip 209 to pull the internally sliding guide post 214, causing the upper surface guide block 212 to slide horizontally inward within the guide groove 210 on the surface of the placement tray 205. This allows the inwardly sliding guide block 212 to push the substrate, along with the upper surface arc clamp 211, to the center of the placement tray 205 until the substrate is positioned correctly. After being pushed to the center, the arc clamps 211 can contact the outer surface of the substrate to clamp it. For irregular substrates, at least two sets of arc clamps 211 can press them inward, allowing the contact points and clamping force distribution to automatically adjust according to the contour of the irregular substrate during the inward sliding process. For example, for oddly shaped substrates, each arc clamp 211 can independently adapt to different parts of the substrate, ensuring stable clamping of the substrate from at least two directions. This solves the problem that traditional fixing fixtures cannot handle irregular shapes, and broadens the range of substrates applicable to the equipment. The synchronous sliding pushing action is crucial for the growth of diamond substrates in the MPCVD equipment 1, ensuring that the substrate is always in a state of equilibrium during the reaction process. The optimal positioning avoids uneven growth environment caused by positional deviation, which would affect the growth quality of diamond films and help produce high-quality, stable diamond substrates. The process only requires the operator to simply pull the push handle 208 to easily control the rotation of the tube 206, which in turn drives a series of components to work together to achieve the outward expansion of the arc clamp 211. This operation method is simple and intuitive, which greatly saves time and effort in placing the substrate. When the substrate needs to be placed, the placement space is quickly opened. After placement, releasing the push handle 208 will automatically fix the substrate without additional complicated fixing steps, which significantly improves work efficiency and is especially suitable for production scenarios that require frequent substrate changes.

[0030] Based on the above technical solution, the working steps of this solution are summarized as follows: During use, the operator can pull the push handle 208 to rotate the tube 206 within the connecting cylinder 202. During this rotation, the tube 206 will also rotate the torsion spring 213. The torsion spring 213 will then apply a reverse torsional force to the tube 206. The rotating connecting cylinder 202 will then rotate the guide arc strip 209 on the upper surface of the limiting disc 207. This rotation of the guide arc strip 209 will pull the internally sliding guide post 214, causing the guide rail block 212 on the upper surface to slide horizontally outward within the guide groove 210 on the surface of the placement disc 205. This allows the guide rail block 212 to move together with the arc clamp 211 on the upper surface of the placement disc 205. The surface of the placement tray 205 slides outward, allowing the operator to place the substrate on the upper surface of the placement tray 205 within the reaction chamber 101. Then, the push handle 208 can be released, allowing the tube 206 to be pushed inward by the reversing force applied by the torsion spring 213. This force drives the guide arc 209 to pull the internally sliding guide post 214, causing the upper surface guide block 212 to slide horizontally inward within the guide groove 210 on the surface of the placement tray 205. This allows the inwardly sliding guide block 212 to push the substrate to the center of the placement tray 205 using the upper surface arc clamp 211. Once the substrate is at the center, the arc clamp 211 presses against the outer surface of the substrate to secure it. The reaction chamber 101 can then be sealed and closed. A specific ratio of reactant gases, such as a mixture of methane and hydrogen, is precisely delivered into the reaction chamber 101 via a gas supply system. Microwave energy generated by a microwave source is then coupled into the reaction chamber 101 via a microwave antenna or coupler. Under the influence of the high-frequency electric field of the microwaves, the molecules in the reactant gases are ionized, forming plasma. At this point, the reaction chamber 101 exhibits a high-temperature, high-energy plasma environment, with temperatures reaching thousands of degrees Celsius. Under these extreme conditions, the carbon-hydrogen bonds in the methane molecules are broken, releasing carbon atoms. These carbon atoms, dissociated from the methane molecules, exhibit high reactivity in the plasma environment. Under the influence of thermal motion and the forces of electric and magnetic fields within the plasma, these carbon atoms... Migrating to the substrate surface, carbon atoms undergo a series of complex chemical reactions and physical adsorption processes upon reaching the substrate surface. Some carbon atoms are adsorbed and deposited on the substrate surface. During this process, hydrogen gas can etch away some unstable carbon clusters or carbon atoms that do not conform to the diamond crystal structure on the substrate surface, ensuring that only carbon atoms that conform to the diamond crystal structure can continue to grow. Over time, the carbon atoms deposited on the substrate surface accumulate and gradually grow according to the diamond crystal structure. Under suitable process parameters such as temperature, pressure, and gas flow rate, carbon atoms continuously accumulate on the basis of the existing crystal structure, gradually forming a diamond film, which continues to thicken, and eventually grows into the desired diamond substrate.

[0031] In summary, this production equipment can clamp substrates of various sizes, from small experimental substrates to large industrial production substrates, thus improving the equipment's versatility and flexibility and reducing the cost and time required to replace positioning devices due to changes in substrate size.

[0032] All parts not described in this utility model are the same as or can be implemented using existing technology. Although embodiments of this utility model have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this utility model, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A production apparatus for manufacturing a diamond substrate, characterized by, The utility model relates to a positioning mechanism for MPCVD equipment. The positioning mechanism (2) comprises a connecting cylinder (202) fixedly installed on the upper surface of the reaction cavity (101), a conical disc (201) fixedly installed on the upper surface of the connecting cylinder (202), a limiting ring (204) fixedly installed in the conical disc (201), a limiting disc (207) rotatably installed in the limiting ring (204), four groups of guiding arc strips (209) fixedly installed on the upper surface of the limiting disc (207), guiding columns (214) slidably installed in the four groups of guiding arc strips (209), the upper surfaces of the guiding columns (214) sliding out of guiding grooves (210) formed in the upper surface of a placing disc (205), and the placing disc (205) fixedly installed in the conical disc (201).

2. The apparatus for producing a diamond substrate according to claim 1, wherein: An arc clamp (211) is fixedly installed on the upper surface of the guiding column (214), the arc clamp (211) slides on the surface of the placing disc (205), a guide rail block (212) is fixedly installed on the lower surface of the arc clamp (211), and the guide rail block (212) slides in the guiding groove (210).

3. The apparatus for producing a diamond substrate according to claim 2, wherein: The guiding arc strips (209) can be pulled and pushed by the rotation of the limiting disc (207) to drive the four groups of guiding columns (214) to simultaneously slide towards the center on the surface of the placing disc (205) through the arc clamp (211).

4. The apparatus for producing a diamond substrate according to claim 2 or 3, wherein: A cylinder tube (206) is fixedly installed on the lower surface of the limiting disc (207), the cylinder tube (206) is rotatably installed in the connecting cylinder (202), a push handle (208) is fixedly installed on the outer surface of the cylinder tube (206), the push handle (208) slides out of a sliding strip opening (203) formed in the outer surface of the connecting cylinder (202), and a torsion spring (213) is fixedly connected to the inner upper surface of the cylinder tube (206).

5. The apparatus for producing a diamond substrate according to claim 2, wherein: The lower surface of the torsion spring (213) is fixedly connected to the lower surface of the connecting cylinder (202).

6. The apparatus for producing a diamond substrate according to claim 5, wherein: ​

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