Inflow runner system and semiconductor processing equipment

Abstract

The utility model provides an inflow runner system and semiconductor processing equipment. The inflow runner system comprises a first runner assembly and a second runner assembly, and each of the first runner assembly and the second runner assembly comprises a branch runner, an inflow main runner connected with the output end of the branch runner, and a pre-outflow runner; the two inflow main runners are respectively connected with an inlet of the reaction cavity; the input ends of the two branch runners are respectively used for introducing a first reaction fluid and a second reaction fluid for reaction; the two branch flow channels are provided with mass flow controllers and branch valves; the two pre-outflow runners are provided with pre-outflow valves; the two ends of each pre-outflow runner are connected between the corresponding mass flow controller and the corresponding branch valve and connected with the suction runner, and each pre-outflow runner is provided with a pre-outflow valve. Based on the flow channel layout, pulse gas inlet of the first reaction fluid and the second reaction fluid can be achieved through the change of the opening and closing state of the valve, and the problems in the related technology are solved.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor processing, and in particular, to a flow inlet flow channel system and a semiconductor processing device. BACKGROUND

[0002] In the process of tungsten film deposition and filling of small size and high aspect ratio holes (such as CD < 0.2 um, aspect ratio > 7:1) in semiconductor processing, pulse nucleation process is needed. Pulse nucleation can greatly improve the hole filling ability of tungsten film deposition, and many advanced processes of chip processing will choose pulse nucleation tungsten hole filling.

[0003] Pulse nucleation requires the alternating pulse of two gases to be passed in, and the passage of auxiliary gas may also be required, so how to find a gas path layout structure suitable for pulse nucleation has become a technical problem to be solved in the industry. SUMMARY

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present disclosure is to provide a flow inlet flow channel system and a semiconductor processing device to solve the problems in the related art.

[0005] The first aspect of the present disclosure provides a flow inlet flow channel system, comprising: a first flow channel assembly, comprising: a first branch flow channel, a first flow inlet main flow channel connected with the output end of the first branch flow channel, and a first pre-outflow flow channel; the first flow inlet main flow channel is connected with the inlet of a reaction chamber; the input end of the first branch flow channel is supplied with a first reaction fluid for reaction; the first branch flow channel is sequentially provided with a first mass flow controller and a first branch valve from the input end to the output end; the first pre-outflow flow channel is provided with a first pre-outflow valve; the input end of the first pre-outflow flow channel is connected between the first mass flow controller and the first branch valve, and the output end is connected with a suction flow channel, and is provided with a first pre-outflow valve; a second flow channel assembly, comprising: a second branch flow channel, a second flow inlet main flow channel connected with the output end of the second branch flow channel, and a second pre-outflow flow channel; the second flow inlet main flow channel is connected with the inlet of a reaction chamber; the input end of the second branch flow channel is supplied with a second reaction fluid for reaction with the first reaction fluid; the second branch flow channel is sequentially provided with a second mass flow controller and a second branch valve from the input end to the output end; the input end of the second pre-outflow flow channel is connected between the second mass flow controller and the second branch valve, and the output end is connected with a suction flow channel.

[0006] In an embodiment of the first aspect, a first control valve is further arranged in the first branch flow channel before the first mass flow controller; and a second control valve is further arranged in the second branch flow channel before the second mass flow controller.

[0007] In an embodiment of the first aspect, the first flow channel assembly further comprises: at least one first sub-branch flow channel, the output end of which is connected to the first flow-in main flow channel at the output end of the first sub-branch flow channel; and the second flow channel assembly further comprises: at least one second sub-branch flow channel, the output end of which is connected to the second flow-in main flow channel at the output end of the second sub-branch flow channel; each of the first sub-branch flow channel and the second sub-branch flow channel is respectively provided with a first sub-branch valve and a second sub-branch valve.

[0008] In an embodiment of the first aspect, the input end of at least one of the first sub-branch flow channel and the second sub-branch flow channel is used to input other fluid; wherein the other fluid which can react undesirably with the second reaction fluid and does not react with the first reaction fluid is transported through the first sub-branch flow channel, and the other fluid which can react undesirably with the first reaction fluid and does not react with the second reaction fluid is transported through the second sub-branch flow channel.

[0009] In an embodiment of the first aspect, the input end of one of the first sub-branch flow channels is used to input the carrier fluid of the first reaction fluid, and the input end of one of the second sub-branch flow channels is used to input the carrier fluid of the second reaction fluid.

[0010] In an embodiment of the first aspect, the first sub-branch flow channel is provided with a third mass flow controller located before the first sub-branch flow channel valve, and the second sub-branch flow channel is provided with a fourth mass flow controller located before the second sub-branch flow channel valve.

[0011] In an embodiment of the first aspect, the first sub-branch flow channel is further provided with a third control valve before the third mass flow controller, and the second sub-branch flow channel is further provided with a fourth control valve before the fourth mass flow controller.

[0012] In an embodiment of the first aspect, the first flow-in main flow channel and the second flow-in main flow channel are respectively provided with a first main valve and a second main valve; the first main valve and the second main valve are in an open state.

[0013] In an embodiment of the first aspect, the first sub-branch flow channel is further provided with a first flow meter after the first sub-branch valve, and the second sub-branch flow channel is further provided with a second flow meter after the second sub-branch valve.

[0014] The second aspect of the present disclosure provides a semiconductor processing equipment, comprising: a reaction cavity; and the flow-in flow channel system according to any one of the first aspect.

[0015] As described above, the present disclosure provides a flow inlet channel system and a semiconductor processing device. The flow inlet channel system comprises a first channel assembly and a second channel assembly, each of which comprises a branch channel, a main flow inlet channel connected to an output end of the branch channel, and a pre-outlet channel. Two main flow inlet channels are respectively connected to inlets of a reaction chamber. Input ends of two branch channels are respectively provided for a first reaction fluid and a second reaction fluid used for reaction. The two branch channels are respectively provided with a mass flow controller and a branch valve. The two pre-outlet channels are respectively provided with a pre-outlet valve. Each pre-outlet channel is connected between the corresponding mass flow controller and the branch valve and a suction channel, and is provided with a pre-outlet valve. Based on the channel layout, the first reaction fluid and the second reaction fluid can be pulsed into the reaction chamber by changing the opening and closing states of the valves, thereby solving the problems in the related art. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 A structural schematic diagram of a flow inlet channel system in an embodiment of the present disclosure is shown.

[0017] Figure 2 A structural schematic diagram of a flow inlet channel system in another embodiment of the present disclosure is shown.

[0018] Figure 3 A structural schematic diagram of a flow inlet channel system in another embodiment of the present disclosure is shown.

[0019] Figure 4 A structural schematic diagram of a semiconductor processing device in an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0020] The embodiments of the present disclosure will be described in detail hereinafter with specific reference to the attached drawings, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the disclosed information. The present disclosure can also be implemented or applied in other different embodiments or modules, and various modifications or changes can be made to the details of the present disclosure without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0021] The embodiments of the present disclosure will be described in detail hereinafter with specific reference to the attached drawings, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the disclosed information. The present disclosure can also be implemented or applied in other different embodiments or modules, and various modifications or changes can be made to the details of the present disclosure without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0022] In the description of the present disclosure, the expressions "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like mean that the specific feature, structure, material or characteristic accompanying the embodiments or examples is included in at least one embodiment or example of the present disclosure. Also, the specific feature, structure, material or characteristic accompanying an embodiment or example can be combined in any appropriate manner in any one or at least one embodiment or example. Furthermore, the person skilled in the art can combine and combine the features of different embodiments or examples and the features of different embodiments or examples represented in the present disclosure without contradiction, if necessary.

[0023] In addition, the terms "first", "second", etc. are used only for the purpose of description and should not be construed as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Thus, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "at least one" is two or more, unless specifically limited.

[0024] In order to clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same reference numerals are assigned to the same or similar constituent elements throughout the description.

[0025] Throughout the description, when it is said that a device is "connected" to another device, it includes not only the case of "direct connection", but also the case of "indirect connection" in which other elements are placed therebetween. In addition, when it is said that a device "includes" a certain constituent element, unless specifically stated to the contrary, other constituent elements are not excluded, but it means that other constituent elements can also be included.

[0026] Although the terms first, second, etc. are used herein to refer to various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first interface and a second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an" and "the" are intended to include plural forms, unless the context clearly indicates otherwise. It should be further understood that the terms "comprise", "comprising", "include", "including", "contain", "containing", "have" and "having" indicate the presence of the stated feature, step, operation, element, module, item, kind, and / or group, but do not exclude the presence or addition of one or at least one other feature, step, operation, element, module, item, kind, and / or group. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Thus, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". This definition applies only when a combination of elements, functions, steps or operations are inherently mutually exclusive.

[0027] The professional terms used herein are used only to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein, unless the context clearly indicates otherwise, also includes the plural form. In the specification, the meaning of "include" is to embody the specific features, regions, integers, steps, operations, elements, and / or components, and does not exclude the presence or addition of other features, regions, integers, steps, operations, elements, and / or components.

[0028] Although not differently defined, the technical terms and scientific terms used herein include the meanings commonly understood by those skilled in the art to which the present disclosure belongs. The terms defined in commonly used dictionaries are additionally explained to have meanings consistent with the related technical literature and the currently prompted messages, unless defined, and should not be over-interpreted as ideal or very formal meanings.

[0029] Pulsed nucleation layer (PNL) is a processing technique used before tungsten deposition, mainly applied to tungsten plug process in semiconductor manufacturing. Pulsed nucleation tungsten technology forms a uniform tungsten nucleation layer by alternately introducing gases such as tungsten hexafluoride (WF6) and silane (SiH4) or diborane (B2H6) into the contact hole. This method can effectively avoid "gap" defects in the hole and improve the quality and reliability of tungsten deposition.

[0030] However, since the pulse of two kinds of reaction gases needs to be alternately controlled, the pulse nucleation needs the alternately pulse of two kinds of gases, and the introduction of auxiliary gas may also be needed, so how to find a gas path layout structure suitable for pulse nucleation has become a technical problem to be solved in the industry.

[0031] In view of this, the present disclosure provides an inlet flow channel system with a gas path layout structure suitable for pulse nucleation to solve the problems in the related art.

[0032] As shown in FIG. 1, a structure schematic diagram of an inlet flow channel system 101 in an embodiment of the present disclosure is shown. Figure 1

[0033] In the embodiment, the inlet flow channel system 101 includes a first flow channel assembly 110 and a second flow channel assembly 120. Figure 1

[0034] ​​The first flow channel assembly 110 includes a first branch flow channel 111, a first inlet main flow channel 112 connected to the output end of the first branch flow channel 111, and a first pre-outlet flow channel 113. The input end of the first branch flow channel 111 is for inputting a first reaction fluid. The output end of the first branch flow channel 111 is connected to one end of the first inlet main flow channel 112. The other end of the first inlet main flow channel 112 is connected to the inlet of the reaction chamber 103 of a semiconductor processing apparatus. As an example, the semiconductor processing apparatus may be, for example, a plasma processing apparatus, whose reaction chamber 103 can be used to ionize the input reaction fluid into plasma for reaction processing of the semiconductor surface, such as deposition, etching, etc. The first branch flow channel 111 is sequentially provided with a first mass flow controller 1112 and a first branch valve 1111 from the input end to the output end. The first mass flow controller 1112 controls the flow rate of the first reaction fluid in the first branch channel 111. The first branch valve 1111 is used to open / close the first branch channel 111 to connect / disconnect it to the first inlet main channel 112. Optionally, the first branch channel 111 may also be provided with a first control valve 1113 located upstream of the first mass flow controller 1112. The opening degree of the first control valve 1113 determines the flow rate of the first reaction fluid supplied from the fluid source to the first mass flow controller 1112. The input end of the first pre-outflow channel 113 is connected between the first mass flow controller 1112 and the first branch valve 1111, and the other end can be connected to the suction channel 104 (which can be connected to a suction device such as a vacuum pump). The first pre-outflow channel 113 is provided with a first pre-outflow valve 1131, which controls the opening, closing, and degree of the first pre-outflow channel 113.

[0035] The second flow channel assembly 120 includes a second branch flow channel 121, a second inlet main flow channel 122 connected to the output end of the second branch flow channel 121, and a second pre-outlet flow channel 123. The input end of the second branch flow channel 121 is supplied with a second reaction fluid. The first reaction fluid and the second reaction fluid are alternately and pulse-wise introduced into the reaction chamber 103 and react within the reaction chamber 103. The output end of the second branch flow channel 121 is connected to one end of the second inlet main flow channel 122. The other end of the second inlet main flow channel 122 is connected to the inlet of the reaction chamber 103 of the semiconductor processing equipment. From the input end to the output end, the second branch flow channel 121 is sequentially provided with a second mass flow controller 1212 and a second branch valve 1211. The second mass flow controller 1212 controls the flow rate of the second reaction fluid in the second branch flow channel 121, and the second branch valve 1211 is used to open / close the second branch flow channel 121 to connect / disconnect it from the second inlet main flow channel 122. Optionally, the second branch channel 121 may also be provided with a second control valve 1213 located upstream of the second mass flow controller 1212. The opening degree of the second control valve 1213 determines the flow rate of the second reaction fluid supplied from the fluid source of the second reaction fluid to the second mass flow controller 1212. The input end of the second pre-outflow channel 123 is connected between the second mass flow controller 1212 and the second branch valve 1211, and the other end can be connected to the suction channel 104, etc. The second pre-outflow channel 123 is provided with a second pre-outflow valve 1231 for controlling the opening, closing, and degree of the second pre-outflow channel 123. In some embodiments, the output ends of the first pre-outflow channel 113 and the second pre-outflow channel 123 can be connected to the same suction channel 104, for example, both can be connected to the suction channel 104 of the reaction chamber 103 for discharging the reaction products.

[0036] In some embodiments, a first main flow channel valve 1121 for switching on and off may be provided in the first main flow channel 112, and a second main flow channel valve 1221 for switching on and off may be provided in the second main flow channel 122. As an example, the first main flow channel valve 1121 and the second main flow channel valve 1221 may be in an open state during the process steps, while the valves in the connected branch flow channels control the switching on and off of their respective branch flow channels.

[0037] In some embodiments, the first pre-outflow channel 113 is used to set different states of the first branch channel 111, such as a filling state to prepare for the pulse output of the first reactive fluid, and a pre-outflow state with stable pressure before the filling state and after the pulse output. Specifically, when the first control valve 1113 in the first branch channel 111 is turned on to continuously supply the first reactive fluid, the first pre-outflow valve 1131 is opened to turn on the first pre-outflow channel 113, while the first branch valve 1111 is closed. This will cause the first reactive fluid continuously supplied in the first branch channel 111 to be output to the output end. After maintaining this for a certain period of time, the pressure in the first branch channel 111 will tend to stabilize and reach a stable pressure. Then, when the first pre-outflow valve 1131 is closed, the first reactive fluid in the first branch channel 111 increases but cannot be discharged, and is in a "stuck" filling state. Subsequently, the first branch valve 1111 is opened and then closed within one pulse duration, while the first main channel remains open (e.g., the first main channel valve 1121 is open), forming a pulse output of the first reactive fluid into the reaction chamber 103. After the pulse output is completed, the first branch valve 1111 closes first, and the first pre-outflow valve 1131 opens subsequently (if the first pre-outflow valve 1131 opens first, it will cause backflow into the reaction chamber 103 via the first pre-outflow channel 113, restoring the pre-outflow state. Optionally, the first branch channel 111 can be purged with purging gas at this time. It should be noted that since the pressure in the suction channel 104 may be lower than that in the reaction chamber 103, the first branch valve and the first pre-outflow valve 1131 will be interlocked in opposite open and closed states to avoid the adverse result of backflow of fluid from the reaction chamber 103 through the open first branch channel 111 into the open first pre-outflow channel 113 and suction channel 104.

[0038] It should be noted that the "flow channel" in this embodiment can be implemented as a pipe within a tube. Alternatively, in some embodiments, it can also be implemented as a channel.

[0039] Since the charging state starts from the stable pressure, maintaining a stable initial pressure at the start of charging, the pressure reached during charging is controlled solely by the charging time and the flow rate of the first reactant fluid. Because the charging time and the flow rate of the first reactant fluid are controllable, the pressure reached during charging is also controllable. This allows for consistent and stable pulse output of the first reactant fluid in each execution. Conversely, without the first pre-outflow channel 113, it is difficult to ensure the stability of the pressure at the start of each charging cycle and the pressure reached during charging, resulting in significant differences in pulse output between different cycles, affecting process quality. Furthermore, without the first pre-outflow channel 113, there is no pre-outflow state, and the charging state is entered directly. The first mass flow controller 1112 (MFC) can determine the output flow rate based on the pressure difference between the input and output ends. Prolonged charging before pulse output will cause the pressure difference across the MFC to disappear, resulting in no first reactant fluid flowing out of the MFC output end. This leads to unstable output or insufficient output during pulse output due to the lack of flow from the MFC. Therefore, by setting the first pre-outflow channel 113, the stability of the pulse output of the first reaction fluid can be effectively guaranteed.

[0040] Understandably, when the flow rate is stable under the control of the first mass flow controller 1112 during the charging state, the amount of air output by the pulse is determined by the duration of the "holding breath" pulse. As an example, the pulse duration can be between a few tenths of a second and several seconds, such as between 0.1s and 2s. Selecting an appropriate pulse duration can achieve the desired pulse output.

[0041] In some embodiments, the second pre-outflow channel 123 is used to set different states of the second branch channel 121, such as a filling state to prepare for the pulse output of the second reactive fluid, and a pre-outflow state with stable pressure before the filling state and after the pulse output. Specifically, when the second control valve 1213 in the second branch channel 121 is turned on to continuously supply the second reactive fluid, the second pre-outflow valve 1231 is opened to turn on the second pre-outflow channel 123, while the second branch valve 1211 is closed. This will cause the second reactive fluid continuously supplied in the second branch channel 121 to be output to the output end. After maintaining this for a certain period of time, the pressure in the second branch channel 121 will tend to stabilize and reach a stable pressure. Then, when the second pre-outflow valve 1231 is closed, the second reactive fluid in the second branch channel 121 increases but cannot be discharged, and is in a "stuck" filling state. Subsequently, the second branch valve 1211 is opened and then closed within one pulse duration, while the second main channel remains open (e.g., the second main channel valve 1221 is open), forming a pulse output of the second reactive fluid into the reaction chamber 103. After the pulse output is completed, the second branch valve 1211 closes first, and the second pre-outflow valve 1231 opens subsequently (if the second pre-outflow valve 1231 opens first, it will cause backflow into the reaction chamber 103 via the second pre-outflow channel 123, thus restoring the pre-outflow state. Optionally, the second branch channel 121 can be purged with purging gas at this time. It should be noted that since the pressure in the suction channel 104 may be lower than that in the reaction chamber 103, the second branch valve and the second pre-outflow valve 1231 will be interlocked in opposite open and closed states to avoid the adverse result of backflow of fluid from the reaction chamber 103 through the open second branch channel 121 into the open second pre-outflow channel 123 and suction channel 104.

[0042] Since the charging state starts from the stable pressure, maintaining a stable initial pressure at the beginning of charging, the pressure reached during charging is controlled only by the charging time and the flow rate of the second reactant fluid. Because the charging time and the flow rate of the second reactant fluid are controllable, the pressure reached during charging is also controllable. This allows for a stable and consistent pulse output of the second reactant fluid in each execution. Conversely, without the second pre-outflow channel 123, it is difficult to ensure the stability of the pressure at the start of charging and the pressure reached during charging, resulting in significant differences in pulse output between different executions, affecting process quality. Furthermore, without the second pre-outflow channel 123, there is no pre-outflow state and the charging state is entered directly. The second mass flow controller 1212 (MFC) can determine the output flow rate based on the pressure difference between the input and output ends. If the charging state is maintained for a long time before pulse output, the pressure difference across the MFC will disappear, resulting in no second reactant fluid flowing out of the MFC output end. This leads to unstable output or insufficient output during pulse output due to the lack of flow from the MFC. Therefore, by setting the second pre-outflow channel 123, the stability of the pulse output of the second reaction fluid can be effectively guaranteed.

[0043] Understandably, when the flow rate is stable under the control of the second mass flow controller 1212 during charging, the amount of air output by the pulse is determined by the duration of the "holding breath" pulse. As an example, the pulse duration can be between a few tenths of a second and several seconds, such as between 0.1s and 2s. Selecting an appropriate pulse duration can achieve the desired pulse output.

[0044] In specific process flows, in addition to the first and second reaction fluids, other fluids may be added. These include carrier fluids for the first and second reaction fluids, and fluids added for other reactions during the deposition / etching process. For example, the term "fluid" can be exemplified as a gas. Taking pulsed nucleation tungsten as an example, the second reaction fluid includes tungsten fluoride gas as a precursor, such as tungsten hexafluoride (WF6). The first reaction fluid includes a first reducing gas for reducing tungsten, such as silane (SiH4). The reaction between them is WF6 + SiH4 → W + SiF4 + HF, thereby reducing and forming a tungsten nucleation layer. In some embodiments, other fluids may also include a second reducing gas for reducing tungsten, such as hydrogen (H2), WF6 + H2 → W + HF, which can be used to form bulk tungsten deposition after the tungsten nucleation layer. Additionally, in some embodiments, other fluids may include a carrier gas for the first reducing gas and a carrier gas for the second reaction fluid (i.e., tungsten hexafluoride). The carrier gas can be an inert gas, such as argon (Ar). In some embodiments, the other fluid may also include a cleaning fluid, such as a gas used to remove excess tungsten from the reaction chamber 103 after tungsten deposition, such as nitrogen trifluoride (NF3) gas.

[0045] For the transmission of these auxiliary gases, please refer to Figure 2 The diagram shown illustrates the structure of an inlet channel system according to another embodiment of this disclosure. Figure 2 In comparison Figure 1In this embodiment, the first flow channel assembly 110 further includes at least one first sub-branch flow channel 114, the output of which converges with the output of the first branch flow channel 111 and is connected to the first inlet main flow channel 112. The second flow channel assembly 120 includes at least one second sub-branch flow channel 124, the output of which converges with the output of the second branch flow channel 121 and is connected to the second inlet main flow channel 122. Each of the first sub-branch flow channel 114 and the second sub-branch flow channel 124 is respectively provided with a first sub-branch valve 1141 and a second sub-branch valve 1241. Further, to avoid unwanted reactions between other fluids belonging to the sub-branch flow channels of the same flow channel assembly, other fluids that will react unwantedly with the second reacting fluid but do not react with the first reacting fluid can be transported through the first sub-branch flow channel 114, and other fluids that will react unwantedly with the first reacting fluid but do not react with the second reacting fluid can be transported through the second sub-branch flow channel 124. For example, the first reactant is SiH4, the second reactant is WF6, and other fluids include H2 and NF3. If WF6 and H2 are in parallel branch channels, an undesirable in-channel reaction may occur between WF6 and H2 when both branch channels are open. Similarly, if SiH4 and NF3 are in parallel branch channels, an undesirable in-channel reaction may occur between SiH4 and NF3 when both branch channels are open. Therefore, when the first reactant is transported through the first branch channel 111, H2 (which does not react with it and contains the same H element) can be transported in a first sub-branch channel 114. And when the second reactant is transported through the second branch channel 121, NF3 (which does not react with it and contains the same F element) can be transported in a second sub-branch channel 124.

[0046] For example Figure 2 As shown, other fluids may also include carrier fluids for the first and second reacting fluids. The carrier fluid for the first reacting fluid can be transported through a first secondary branch channel 114, and the carrier fluid for the second reacting fluid can be transported through a second secondary branch channel 124. The carrier fluid may include an inert gas, such as argon, as a carrier gas.

[0047] In some embodiments, each first sub-branch flow channel 114 may be sequentially provided with a third mass flow controller 1142 and a first sub-branch valve 1141 from the input end to the output end. Optionally, a third control valve 1143 may also be provided upstream of the third mass flow controller 1142. Each second sub-branch flow channel 124 may be sequentially provided with a fourth mass flow controller 1242 and a second sub-branch valve 1241 from the input end to the output end. Optionally, a fourth control valve 1243 may also be provided upstream of the fourth mass flow controller 1242. During the process steps, the first sub-branch flow channel 114 and the second sub-branch flow channel 124 may be opened / closed according to process requirements.

[0048] like Figure 3 The diagram shown illustrates the structure of the inlet flow channel system in another embodiment of this disclosure.

[0049] exist Figure 3 In, for example, Figure 2 Based on the embodiments (of course, it can also be based on...) Figure 1 Based on the embodiment, a first flow meter 1114 is further provided downstream of the first branch valve in the first branch flow channel 111. A second flow meter 1214 is further provided downstream of the second branch valve in the second branch flow channel. The first flow meter 1114 and the second flow meter 1214 can be used to detect the flow rate data of the first reactive fluid and the second reactive fluid, respectively. This can be used to analyze whether the two reactive fluids are flowing normally, such as whether there is an abnormal flow rate indicating a valve malfunction, or whether there are cyclical alternating pulses, etc.

[0050] like Figure 4 The diagram shown illustrates the structure of a semiconductor processing apparatus according to an embodiment of the present disclosure.

[0051] The semiconductor processing equipment includes a reaction chamber 103 and an inlet flow channel system 101 as described in any of the previous embodiments.

[0052] Specifically, a stage 105 for loading wafers, such as a hot stage or electrostatic chuck, can be provided at the bottom of the reaction chamber 103. An air inlet 106 is formed at the top (or other location) of the reaction chamber 103 for air intake. Optionally, a spray head 107 facing the stage can be connected to the air inlet for spraying air intake. An exhaust port can be formed at the bottom of the reaction chamber 103 outside the stage, and the flow channel is connected to a suction flow channel 104. The suction flow channel 104 can be connected to a vacuum pump for extracting the reaction products. An exhaust valve 108 can also be provided in the flow channel from the exhaust port of the reaction chamber 103 to the suction flow channel 104. It should be noted that, for structural simplification, some components are omitted, such as the plasma ionization components for gas plasmaization within the plasma reaction chamber 103, such as an induction coil for applying radio frequency voltage.

[0053] The first branch channel 111 and the second branch channel 121 in the first channel assembly 110 of the flow channel system 101 can be connected to the air inlet 106 of the reaction chamber 103. In some embodiments, the air inlet 106 may be one or more air inlets. In other embodiments, the air inlet 106 may include a mixer for initially mixing the incoming first and second reaction fluids before feeding them into the reaction chamber 103 to accelerate the reaction. The flow channel system 101 can be controlled to alternately pulse-feed the first and second reaction fluids into the reaction chamber 103 to achieve semiconductor process flows such as pulsed nucleation tungsten.

[0054] In this embodiment, other fluids may exemplarily include a second reducing fluid for reducing tungsten, such as hydrogen (H2), transported in a first sub-branch channel 114 (WF6 + H2 → W + HF), which can be used to form bulk tungsten deposits after the tungsten nucleation layer. Additionally, in some embodiments, other fluids may also include a carrier fluid for the first reducing fluid transported in another first sub-branch channel 114, and a carrier fluid for the deposition reaction fluid (i.e., tungsten hexafluoride) transported in a second sub-branch channel 124. For example, the carrier fluid may be an inert gas, such as argon (Ar). In some embodiments, the other fluids may also include a cleaning fluid, such as NF3 gas, transported in another second sub-branch channel 124, which can be used to react with tungsten to remove excess tungsten.

[0055] In summary, this disclosure provides an inlet flow channel system and semiconductor processing equipment. The inlet flow channel system includes a first flow channel assembly and a second flow channel assembly. Each flow channel assembly includes: a branch flow channel, an inlet main flow channel connected to the output end of the branch flow channel, and a pre-outlet flow channel. The two inlet main flow channels are respectively connected to the inlet of the reaction chamber. The input ends of the two branch flow channels are respectively supplied with a first reaction fluid and a second reaction fluid for the reaction. The two branch flow channels are equipped with a mass flow controller and a branch valve. The two pre-outlet flow channels are each equipped with a pre-outlet valve. Each pre-outlet flow channel is connected at both ends to the corresponding mass flow controller and branch valve, and also to a suction flow channel, and is equipped with a pre-outlet valve. Based on this flow channel layout, pulsed air intake of the first and second reaction fluids can be achieved by changing the valve opening and closing states, solving the problems in related technologies.

[0056] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this disclosure should still be covered by the protection scope of this disclosure.

Claims

1. An inlet flow channel system, characterized in that, include: The first flow channel assembly includes: a first branch flow channel, a first inlet main flow channel connected to the output end of the first branch flow channel, and a first pre-outflow flow channel; the first inlet main flow channel is connected to the inlet of the reaction chamber; the input end of the first branch flow channel is supplied with a first reaction fluid for the reaction; the first branch flow channel is provided with a first mass flow controller and a first branch valve in sequence from the input end to the output end; the first pre-outflow flow channel is provided with a first pre-outflow valve; the input end of the first pre-outflow flow channel is connected between the first mass flow controller and the first branch valve, and the output end is connected to the suction flow channel and is provided with a first pre-outflow valve; The second flow channel assembly includes: a second branch flow channel, a second inlet main flow channel connected to the output end of the second branch flow channel, and a second pre-outflow flow channel; the second inlet main flow channel is connected to the inlet of the reaction chamber; the input end of the second branch flow channel is supplied with a second reaction fluid for reacting with the first reaction fluid; a second mass flow controller and a second branch valve are sequentially arranged from the input end to the output end of the second branch flow channel; the input end of the second pre-outflow flow channel is connected between the second mass flow controller and the second branch valve, and the output end is connected to the suction flow channel.

2. The inlet flow channel system according to claim 1, characterized in that, A first control valve is further provided in the first branch flow channel upstream of the first mass flow controller; a second control valve is further provided in the second branch flow channel upstream of the second mass flow controller.

3. The inlet flow channel system according to claim 1, characterized in that, The first flow channel assembly further includes: at least one first sub-branch flow channel, the output end of which is connected to the first inlet main flow channel at the same point as the output end of the first sub-branch flow channel; the second flow channel assembly further includes: at least one second sub-branch flow channel, the output end of which is connected to the second inlet main flow channel at the same point as the output end of the second sub-branch flow channel; each of the first sub-branch flow channel and the second sub-branch flow channel is respectively provided with a first sub-branch valve and a second sub-branch valve.

4. The inlet flow channel system according to claim 3, characterized in that, The input ends of at least one first sub-branch channel and at least one second sub-branch channel are used to input other fluids; wherein, other fluids that will react undesirably with the second reactive fluid but do not react with the first reactive fluid are transported through the first sub-branch channel, and other fluids that will react undesirably with the first reactive fluid but do not react with the second reactive fluid are transported through the second sub-branch channel.

5. The inlet flow channel system according to claim 3, characterized in that, An input end of the first sub-branch flow channel is used to input the carrier fluid of the first reaction fluid; an input end of the second sub-branch flow channel is used to input the carrier fluid of the second reaction fluid.

6. The inlet flow channel system according to claim 3, characterized in that, The first sub-branch flow channel is equipped with a third mass flow controller located upstream of the valve in the first sub-branch flow channel; the second sub-branch flow channel is equipped with a fourth mass flow controller located upstream of the valve in the second sub-branch flow channel.

7. The inlet flow channel system according to claim 6, characterized in that, A third control valve is further provided in the first sub-branch flow channel before the third mass flow controller; a fourth control valve is further provided in the second branch flow channel before the fourth mass flow controller.

8. The inlet flow channel system according to claim 1, characterized in that, A first main valve and a second main valve are respectively provided in the first inlet main channel and the second inlet main channel; the first main valve and the second main valve are in the open state.

9. The inlet flow channel system according to claim 1, characterized in that, A first flow meter is also provided downstream of the first branch valve in the first branch flow channel; a second flow meter is also provided downstream of the second branch valve in the second branch flow channel.

10. A semiconductor processing apparatus, characterized in that, include: reaction chamber; The inlet flow channel system as described in any one of claims 1 to 9.

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