Packaging structure of large-current silicon-based mos transistor

Abstract

The utility model relates to a packaging structure of a large-current silicon-based mos tube, which comprises a packaging assembly arranged on the back surface of a transistor body, the packaging assembly comprises a ceramic substrate arranged on the back surface of the transistor body, and a packaging sleeve shell is arranged on the outer side of the ceramic substrate. According to the packaging structure of the large-current silicon-based mos tube, the ceramic substrate, the pin frame, the heat dissipation piece and other components are arranged in the packaging sleeve shell, an efficient heat dissipation path is formed, the ceramic substrate is tightly attached to the transistor body, heat can be rapidly absorbed and conducted to the soaking piece in the packaging sleeve shell, the soaking piece is matched with the heat dissipation plate, and therefore the heat dissipation efficiency is improved. According to the high-current silicon-based MOS tube, heat is dissipated in a heat conduction and heat convection mode, in addition, heat convection is further enhanced through the design of the air guide grooves in the back face of the heat dissipation plate, the heat dissipation efficiency is improved, the problems that when the high-current silicon-based MOS tube processes high current, due to poor heat dissipation, on-resistance is increased, and thermal runaway is caused can be effectively solved, and the stability and reliability of the MOS tube are improved.

Description

Technical Field

[0001] This utility model relates to the field of silicon-based MOSFET technology, specifically to a packaging structure for a high-current silicon-based MOSFET. Background Technology

[0002] High-current silicon-based MOSFETs mainly consist of a silicon semiconductor chip, gate, source, and drain electrodes. An insulating layer and gate are fabricated on the silicon chip using complex processes. The source and drain are located on opposite sides of the chip, used for input and output current, respectively. The conductivity of the semiconductor is controlled based on the electric field effect. When a voltage is applied between the gate and the source, an electric field is formed on the semiconductor surface, thereby changing the conductivity type and degree of the semiconductor, and thus controlling the current between the drain and the source. Designed specifically to handle high currents, they can withstand high current loads and meet the needs of high-power electronic devices.

[0003] When high-current silicon-based MOSFETs are packaged without effective heat dissipation design, it may affect the stability of the transistor in handling high current. This is because the MOSFET itself generates a lot of heat when handling high current. If heat dissipation is poor, the temperature will continue to rise, leading to an increase in its on-resistance. Without a good heat dissipation structure, the temperature of the MOSFET may continue to rise, eventually leading to thermal runaway and affecting the stability of the silicon-based MOSFET when handling high current. Therefore, this application proposes a packaging structure for high-current silicon-based MOSFETs to solve the above-mentioned technical problems. Utility Model Content

[0004] To address the shortcomings of existing technologies, this invention provides a packaging structure for a high-current silicon-based MOSFET, which has advantages such as good heat dissipation. It solves the problem that in existing technologies, when handling high currents, the MOSFET itself generates a lot of heat. If heat dissipation is poor, the temperature will continue to rise, leading to an increase in its on-resistance. Without a good heat dissipation structure, the temperature of the MOSFET may continue to rise, eventually leading to thermal runaway and affecting the stability of the silicon-based MOSFET when handling high currents.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a packaging structure for a high-current silicon-based MOSFET, including a packaging component disposed on the back side of the transistor body;

[0006] The packaging assembly includes a ceramic substrate on the back of the transistor body, an encapsulation shell on the outside of the ceramic substrate to isolate the transistor body from the outside, a lead frame inside the encapsulation shell and the lead frame connected to the transistor body, and a heat sink inside the encapsulation shell to improve the heat dissipation efficiency of the silicon-based MOSFET.

[0007] The heat dissipation component includes a heat spreader disposed inside the encapsulation housing, and the heat spreader is located on the rear side of the ceramic substrate. Thermal grease is filled between the heat spreader and the side opposite to the ceramic substrate. A heat sink is fixedly disposed on the back of the heat spreader for heat exchange and heat dissipation with the outside.

[0008] Furthermore, the four outer surfaces of the ceramic substrate are respectively attached to the four inner sidewalls of the encapsulation shell to separate the heat dissipation space.

[0009] Furthermore, the bottom end of the pin frame extends through and to the outside of the package housing.

[0010] Furthermore, the length and width of the heat spreader are equal to the length and width of the ceramic substrate, respectively, and the thermal grease is an insulating high thermal conductivity grease.

[0011] Furthermore, the back of the encapsulation housing has a heat dissipation mounting port, and the heat dissipation plate is embedded inside the heat dissipation mounting port.

[0012] Furthermore, the back of the heat sink has several sets of air guide grooves to guide gas flow and improve heat exchange efficiency.

[0013] Compared with the prior art, the technical solution of this application has the following beneficial effects:

[0014] The packaging structure of this high-current silicon-based MOSFET forms an efficient heat dissipation path by incorporating a ceramic substrate, lead frame, and heat sink within the package. The ceramic substrate is tightly bonded to the transistor body, enabling it to quickly absorb heat and conduct it to the heat spreader inside the package. The heat spreader works in conjunction with the heat sink to dissipate heat through thermal conduction and convection. Furthermore, the air duct design on the back of the heat sink further enhances thermal convection and improves heat dissipation efficiency. This effectively solves the problems of increased on-resistance and thermal runaway caused by poor heat dissipation when handling high currents in high-current silicon-based MOSFETs, thereby improving the stability and reliability of the MOSFET. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of this utility model;

[0016] Figure 2 This is a schematic diagram of the packaging component of this utility model;

[0017] Figure 3 This is a schematic diagram of the heat sink component of this utility model.

[0018] In the diagram: 1. Transistor body; 2. Packaging assembly; 21. Ceramic substrate; 22. Packaging shell; 23. Lead frame; 24. Heat sink; 241. Heat sink; 242. Thermal grease; 243. Heat sink plate; 244. Heat sink mounting port; 245. Air duct. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0020] Example 1: Please refer to Figure 1-2 The packaging structure of a high-current silicon-based MOSFET in this embodiment includes a packaging component 2 disposed on the back of the transistor body 1. The transistor body 1 is the core part of the entire MOSFET and is responsible for processing high-current signals.

[0021] Example 2: Please refer to Figure 1-3 Based on Embodiment 1, the packaging component 2 in this embodiment includes a ceramic substrate 21 on the back of the transistor body 1. The packaging component 2 is disposed on the back of the transistor body 1, and its main function is to protect the transistor body 1 and isolate it from the outside world, while providing a structural basis for heat dissipation. The ceramic substrate 21 is tightly attached to the back of the transistor body 1 and is the first station for heat conduction. It has good thermal conductivity and can quickly absorb and conduct away the heat generated by the transistor body 1. A packaging shell 22 is disposed on the outside of the ceramic substrate 21 to isolate the transistor body 1 from the outside world. A lead frame 23 is disposed inside the packaging shell 22 and is connected to the transistor body 1. A heat sink 24 is disposed inside the packaging shell 22 to improve the heat dissipation efficiency of the silicon-based MOSFET.

[0022] The further encapsulation shell 22 wraps around the outside of the ceramic substrate 21, isolating the transistor body 1 from the external environment and preventing external factors from affecting the MOS transistor. At the same time, the encapsulation shell 22 provides space for the installation and support of internal heat dissipation components.

[0023] The heat sink 24 includes a heat spreader 241 disposed inside the encapsulation housing 22 and located on the rear side of the ceramic substrate 21. The heat spreader 241 is disposed inside the encapsulation housing 22 and located on the rear side of the ceramic substrate 21, which can evenly distribute the heat conducted from the ceramic substrate 21 and prevent heat from accumulating locally. Thermal grease 242 is filled between the heat spreader 241 and the side opposite to the ceramic substrate 21. A heat sink 243 is fixedly disposed on the back of the heat spreader 241 for heat exchange and heat dissipation with the outside.

[0024] Furthermore, the heat sink 243 dissipates the heat transferred from the heat spreader 241 by exchanging heat with the outside world, and is the terminal link of the entire heat dissipation path.

[0025] In this embodiment, the four outer sides of the ceramic substrate 21 are respectively attached to the four inner sidewalls of the encapsulation shell 22 to separate the heat dissipation space. The bottom end of the pin frame 23 extends through and to the outside of the encapsulation shell 22. The length and width of the heat spreader 241 are equal to the length and width of the ceramic substrate 21. The thermal grease 242 is an insulating high thermal conductivity grease. The thermal grease 242 can fill the tiny gaps between the two, improve the heat conduction efficiency, and ensure that heat can be quickly transferred from the ceramic substrate 21 to the heat spreader 241. The back of the encapsulation shell 22 has a heat dissipation mounting port 244, and the heat sink 243 is embedded in the heat dissipation mounting port 244. The back of the heat sink 243 has several sets of air guide grooves 245 to guide the gas flow and improve the heat exchange efficiency.

[0026] It should be noted that the back of the heat sink 243 is provided with several sets of air guide slots 245. These air guide slots 245 can guide the air flow and form convection. When the air flows through the air guide slots 245, it can carry away more heat, further improving the heat exchange efficiency between the heat sink 243 and the outside air, thereby enhancing the heat dissipation effect of the entire heat dissipation structure.

[0027] The working principle of the above embodiments is as follows:

[0028] The transistor body 1 is the core component of the entire MOSFET, responsible for processing high-current signals. The package component 2 is located on the back of the transistor body 1, and its main function is to protect the transistor body 1 and isolate it from the outside environment, while also providing a structural basis for heat dissipation. The ceramic substrate 21 is tightly attached to the back of the transistor body 1 and is the first point of heat conduction. It has good thermal conductivity and can quickly absorb and conduct away the heat generated by the transistor body 1. The package shell 22 wraps around the outside of the ceramic substrate 21, isolating the transistor body 1 from the external environment and preventing external factors from damaging the MOSFET. The encapsulation housing 22 provides space for the installation and support of internal heat dissipation components. The heat spreader 241 is located inside the encapsulation housing 22, behind the ceramic substrate 21. It can evenly distribute the heat conducted from the ceramic substrate 21, preventing localized heat accumulation. Thermal grease 242 fills the tiny gaps between the two, improving heat conduction efficiency and ensuring rapid heat transfer from the ceramic substrate 21 to the heat spreader 241. The heat sink 243 dissipates the heat transferred from the heat spreader 241 through heat exchange with the outside environment, serving as the final stage of the entire heat dissipation path. Several sets of air ducts 245 are provided on the back of the heat sink 243. These air ducts 245 guide air flow, forming convection. When air flows through the air ducts 245, it carries away more heat, further improving the heat exchange efficiency between the heat sink 243 and the outside air, thereby enhancing the overall heat dissipation effect of the heat dissipation structure.

[0029] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0030] If this patent discloses or relates to components or structural parts that are fixedly connected to each other, then unless otherwise stated, a fixed connection can be understood as: a fixed connection that can be detached (e.g., using bolts or screws), or a fixed connection that cannot be detached (e.g., riveting, welding). Of course, a fixed connection can also be replaced by an integral structure (e.g., manufactured by casting) (except where it is obviously impossible to use an integral forming process).

[0031] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention.

Claims

1. A packaging structure for a high-current silicon-based MOSFET, characterized in that: Includes a packaging component (2) disposed on the back side of the transistor body (1); The packaging assembly (2) includes a ceramic substrate (21) on the back of the transistor body (1). A packaging shell (22) is provided on the outside of the ceramic substrate (21) to isolate the transistor body (1) from the outside. A lead frame (23) is provided inside the packaging shell (22) and the lead frame (23) is connected to the transistor body (1). A heat sink (24) is provided inside the packaging shell (22) to improve the heat dissipation efficiency of the silicon-based MOSFET. The heat sink (24) includes a heat spreader (241) disposed inside the encapsulation shell (22), and the heat spreader (241) is located on the rear side of the ceramic substrate (21). Thermal grease (242) is filled between the heat spreader (241) and the side opposite to the ceramic substrate (21). A heat sink (243) is fixedly disposed on the back of the heat spreader (241) for heat exchange and heat dissipation with the outside.

2. The packaging structure of a high-current silicon-based MOSFET according to claim 1, characterized in that: The four outer surfaces of the ceramic substrate (21) are respectively attached to the four inner sidewalls of the encapsulation shell (22) to separate the heat dissipation space.

3. The packaging structure of a high-current silicon-based MOSFET according to claim 2, characterized in that: The bottom end of the pin frame (23) extends through and to the outside of the package housing (22).

4. The packaging structure of a high-current silicon-based MOSFET according to claim 3, characterized in that: The length and width of the heat spreader (241) are equal to the length and width of the ceramic substrate (21), respectively, and the thermal grease (242) is an insulating high thermal conductivity grease.

5. The packaging structure of a high-current silicon-based MOSFET according to claim 4, characterized in that: The back of the encapsulation shell (22) is provided with a heat dissipation mounting port (244), and the heat dissipation plate (243) is embedded in the heat dissipation mounting port (244).

6. The packaging structure of a high-current silicon-based MOSFET according to claim 5, characterized in that: The back of the heat sink (243) is provided with several sets of air guide grooves (245) to guide gas flow and improve heat exchange efficiency.

Images