Chamber gas injection assembly and chemical vapor deposition equipment

Abstract

The utility model provides a chamber air injection assembly and chemical vapor deposition equipment. The chamber air injection assembly comprises a cover body, a central air injection component and a side air injection component. The cover body comprises a top wall and a side wall. Each side air injection component comprises an edge air injection piece and a middle air injection piece. The edge air injection piece extends from the side wall to the center of the cover body by a first length in the radial direction of the side wall. The edge air injection piece is provided with an edge air outlet. The middle air injection piece extends by a second length from the side wall to the center of the cover body in the radial direction of the side wall. The second length is greater than the first length. The middle air injection piece is provided with a middle air outlet. The middle air outlets are located between the center air injection component and the edge air injection pieces in the radial direction of the side wall. The middle air injection piece comprises a main pipeline and a branch pipeline. The main pipeline is connected to the side wall and extends in the radial direction of the side wall. The branch pipelines are communicated with the main pipeline and intersect with the main pipeline. According to the utility model, the distribution uniformity of the gas in the central area, the middle area and the edge area of the wafer can be improved.

Description

Technical Field

[0001] This utility model relates generally to the field of semiconductor technology, and more specifically to a chamber jet assembly and a chemical vapor deposition apparatus. Background Technology

[0002] In semiconductor device manufacturing, as linewidths narrow, chemical vapor deposition (CVD) utilizes high-density plasma (HDP) to fill dielectric layers. HDP trench isolation filling technology is a type of HDP CVD technology. HDP trench isolation filling technology is widely used in integrated circuit fabrication processes, such as STI, ILD, and IMD, all of which require trench isolation layers. The uniformity of this thin film significantly impacts product yield, especially as wafer sizes increase, making process uniformity particularly crucial.

[0003] In related technologies, the chamber jet assembly includes an annular sidewall and a ring of side jet nozzles (nozzles) laid circumferentially along the sidewall. Because all the side jet nozzles are of uniform length, the reactive gas ejected from each nozzle exhibits an excess in the central and edge regions of the wafer, and a deficiency in the intermediate region between the edge and center regions. This results in faster deposition in the central and edge regions of the wafer compared to the intermediate region during the deposition process. Ultimately, this leads to a significantly uneven distribution of film thickness, i.e., poor film flatness.

[0004] Therefore, there is a need to provide a chamber jet assembly and a chemical vapor deposition apparatus to at least partially solve the above problems. Utility Model Content

[0005] The present invention includes a series of simplified concepts, which will be further explained in detail in the detailed description section. This present invention is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To at least partially solve the above problems, the first aspect of this utility model provides a chamber jet assembly, the chamber jet assembly comprising:

[0007] A cover, the cover including a top wall and side walls, the top wall being constructed in a circular shape, and the side walls being constructed in an annular structure extending in the circumferential direction of the top wall;

[0008] A central jetting member, disposed at the center of the top wall, adapted to jet gas into the central region of the wafer; and

[0009] A side jet member, the side jet member being connected to the sidewall, the side jet member comprising:

[0010] Multiple sets of edge jets, each set of edge jets being arranged at intervals along the circumferential direction of the sidewall, the edge jets being configured to extend a first length from the sidewall toward the center of the cover in the radial direction of the sidewall, the edge jets having edge outlets adapted to jettison gas into the edge region of the wafer.

[0011] At least two intermediate jets are provided, each of which is spaced apart circumferentially along the sidewall. Each intermediate jet is configured to extend a second length, greater than a first length, from the sidewall toward the center of the housing in a radial direction along the sidewall. Each intermediate jet has a central outlet located radially along the sidewall between the central jet member and the edge jet members. The central outlet is adapted to jet into the central region of the wafer.

[0012] The intermediate jet component includes:

[0013] A main pipe, which is connected to the sidewall and extends radially toward the center of the enclosure along the sidewall; and

[0014] At least two branch pipes are provided, the branch pipes connecting to the main pipe, each of the at least two branch pipes being located on at least one side of the main pipe along a direction intersecting the main pipe, and / or each of the at least two branch pipes being arranged at intervals along the extension direction of the main pipe.

[0015] Each of the intermediate jet components includes a plurality of intermediate air outlets, and the plurality of intermediate air outlets are provided at least in the branch pipe.

[0016] According to the chamber jet assembly of the first aspect of this utility model, by adding an intermediate jetting component, jetting can be applied to the central region of the wafer. Compared with the prior art, it can not only jet the edge region of the wafer through the edge jetting component and the central region of the wafer through the central jetting component, but also jet the central region of the wafer located between the central region and the edge region through the intermediate jetting component. This allows for a more uniform distribution of silicon-containing gas, such as silane, in the central region, the central region, and the edge region of the wafer. Consequently, during the filling of the dielectric layer using HDP trench isolation filling technology, the uniformity of the deposited film thickness is improved, i.e., the flatness of the film layer is improved. Since the intermediate jetting component has a main pipe and at least two branch pipes, gas is supplied to each branch pipe through the main pipe, and jetting is achieved through the gas outlet located in the middle of each branch pipe. This increases the jetting range, further improving the jetting uniformity and jetting efficiency.

[0017] Optionally, the branch pipes are arranged at intervals with the central jet member and the edge jet member along the radial direction of the sidewall.

[0018] Optionally, the intermediate jet has an inlet end and a terminal end, the inlet end being located at the end of the main pipe away from the branch pipe, and the terminal end being located at the end of the branch pipe away from the main pipe;

[0019] Along the gas flow path from the inlet end to the outlet end, the distribution density of the intermediate outlets increases, or the distance between adjacent intermediate outlets decreases.

[0020] Optionally, the branch pipe includes:

[0021] A first branch pipe section, one end of which is connected to the main pipe, and the first branch pipe section extends along a direction intersecting the main pipe.

[0022] The second branch pipe section has one end connected to the first branch pipe section, and the second branch pipe section extends along a direction intersecting the first branch pipe section. The second branch pipe section is spaced apart from the main pipe.

[0023] Optionally, the number of second branch pipe sections is at least two, and at least two second branch pipe sections are disposed on both sides of the first branch pipe section along a direction intersecting the first branch pipe section, and / or at least two second branch pipe sections are disposed at intervals along the extension direction of the first branch pipe section.

[0024] Optionally, in each of the intermediate jets, the orientation of at least a portion of the intermediate air outlets is different from the orientation of at least another portion of the intermediate air outlets.

[0025] Optionally, along the radial direction of the sidewall, the minimum distance between the plurality of intermediate air outlets of each side jet member and the central jet member is equal to the minimum distance from the plurality of intermediate air outlets to the edge jet members;

[0026] In each of the intermediate jets, at least a portion of the intermediate air outlet is configured to face the center of the shroud, and at least another portion of the intermediate air outlet is configured to face the sidewall.

[0027] Optionally, in each of the intermediate jets, at least a portion of the intermediate outlets are configured to face the adjacent intermediate jet.

[0028] Optionally, the edge jet and the middle jet are located in the same horizontal plane parallel to the top wall; and / or

[0029] The branch pipe and the main pipe are located in the same horizontal plane parallel to the top wall; and / or

[0030] Each of the edge air outlets and each of the middle air outlets are located in the same horizontal plane parallel to the top wall.

[0031] A second aspect of this invention provides a chemical vapor deposition apparatus, the chemical vapor deposition apparatus including the chamber jet assembly described above.

[0032] According to the chemical vapor deposition apparatus of the second aspect of this invention, by applying the aforementioned chamber jet assembly, silicon-containing gases such as silane can be more uniformly distributed in the central, intermediate, and edge regions of the wafer. This improves the uniformity of the deposited film thickness, i.e., enhances the flatness of the film, during the filling of the dielectric layer using HDP trench isolation filling technology. Consequently, the flatness of the dielectric layer deposited using HDP trench isolation filling technology can be effectively improved, which will help improve subsequent photolithography processes and the speed and reliability of device signal transmission, etc. Attached Figure Description

[0033] The following drawings, which illustrate embodiments of the present invention, are incorporated herein as part of the present invention for understanding the invention. The drawings show embodiments of the present invention and their descriptions, serving to explain the principles of the present invention. In the drawings,

[0034] Figure 1 This is a bottom view of a chamber jet assembly according to a first embodiment of the present invention, in which the edge outlets and the center outlet are omitted.

[0035] Figure 2 for Figure 1Another bottom view of the chamber jet assembly shown, with a portion of the edge outlets omitted;

[0036] Figure 3 for Figure 1 Another bottom view of the chamber jet assembly shown, with the jet direction indicated around the central outlet.

[0037] Figure 4 This is a bottom view of a chamber jet assembly according to a modified embodiment of the first embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0038] Figure 5 This is a bottom view of a chamber jet assembly according to another modified embodiment of the first embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0039] Figure 6 This is a bottom view of a chamber jet assembly according to a second embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0040] Figure 7 This is a bottom view of a chamber jet assembly according to a third embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0041] Figure 8 This is a bottom view of a chamber jet assembly according to the fourth embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0042] Figure 9 This is a bottom view of a chamber jet assembly according to a fifth embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0043] Figure 10 This is a bottom view of a chamber jet assembly according to the sixth embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0044] Figure 11 This is a bottom view of a chamber jet assembly according to the seventh embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0045] Figure 12 This is a bottom view of a chamber jet assembly according to the eighth embodiment of the present invention, omitting the edge and center air outlets; and

[0046] Figure 13 This is a bottom view of a chamber jet assembly according to the ninth embodiment of the present invention, in which the edge outlet and the center outlet are omitted.

[0047] Explanation of reference numerals in the attached figures:

[0048] 100, 200, 300, 400, 500, 600, 700, 800, 900: Chamber jet assembly

[0049] 110: Cover

[0050] 111, 211, 311, 411, 511, 611, 711, 811, 911: Top wall

[0051] 112, 212, 312, 412, 512, 612, 712, 812, 912: Sidewall

[0052] 120, 220, 320, 420, 520, 620, 720, 820, 920: Center jet component

[0053] 130: Side jet component

[0054] 131, 231, 331, 431, 531, 631, 731, 831, 931: Edge jetting components

[0055] 131a: Edge vent

[0056] 132, 232, 332, 432, 532, 632, 732, 832, 932: Intermediate jet components

[0057] 132a: Center air outlet

[0058] 133, 233, 333, 433, 533, 633, 733, 833, 933: Main pipeline

[0059] 134: Branch pipe

[0060] 135, 235, 335, 435, 535, 635, 735, 835, 935: First branch pipe section

[0061] 136, 236, 336, 736: Second branch pipe section

[0062] Rd: Radial direction

[0063] Cd: Circumferential direction

[0064] Jd: Jet direction Detailed Implementation

[0065] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. However, it will be apparent to those skilled in the art that embodiments of the present invention may be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described in order to avoid confusion with embodiments of the present invention.

[0066] To fully understand the embodiments of this utility model, a detailed structure will be presented in the following description. Obviously, the implementation of the embodiments of this utility model is not limited to the specific details familiar to those skilled in the art.

[0067] It should be understood that the terminology used herein is intended only to describe particular embodiments and is not intended to limit the scope of the invention. The singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. When the terms “comprising” and / or “including” are used in this specification, they indicate the presence of the stated features, integrals, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or combinations thereof.

[0068] The ordinal numbers such as "first" and "second" used in this utility model are merely identifiers and do not have any other meaning, such as a specific order. Furthermore, for example, the term "first component" does not imply the existence of a "second component," and the term "second component" does not imply the existence of a "first component." It should be noted that the terms "upper," "lower," "front," "rear," "left," "right," "inner," "outer," and similar expressions used in this utility model are for illustrative purposes only and are not intended to be limiting.

[0069] The terms “center,” “parallel,” “perpendicular,” “aligned,” and “symmetrical” used in this invention do not have to be precise, but can include typical engineering tolerances.

[0070] The specific embodiments of the present invention will be described in more detail below with reference to the accompanying drawings, which show representative embodiments of the present invention and are not intended to limit the present invention.

[0071] As the linewidth of sensors such as CMOS image sensors (CIS) narrows, chemical vapor deposition (CVD) will utilize high-density plasma (HDP) deposition to fill the dielectric layer. Under the influence of an RF field, the energetic plasma bombards the surface of the wafer, thereby increasing the filling capability of the grid. The flatness of the HDP deposition layer directly affects subsequent chemical mechanical polishing (CMP) processes, photolithography processes, and the speed and reliability of device signal transmission. CIS, in particular, has very high requirements for the flatness of the HDP deposition layer. Furthermore, the uniformity of the silicon source gas distribution above the wafer directly affects the uniformity of HDP deposition.

[0072] Currently, due to the limitations of existing structures, HDP deposition always has a higher deposition rate in the central and edge regions of the wafer, while the deposition rate in the intermediate region between the central and edge regions is lower. This results in an unsatisfactory uniformity of film thickness after HDP deposition, which is reflected in the fact that the film thickness in the central and edge regions is thicker than that in the intermediate region.

[0073] To address the aforementioned problems, this invention provides a chamber jet assembly and a chemical vapor deposition (CVD) apparatus incorporating the chamber jet assembly. This invention utilizes techniques to improve the uniformity of silicon source gas distribution on the wafer, thereby enhancing the uniformity of HDP deposition. The CVD apparatus described here can be a CVD apparatus employing HDP trench isolation and filling technology for deposition. See below for further details. Figures 1 to 13 The examples shown are explained in detail.

[0074] First Implementation Method

[0075] Figures 1 to 5 The chamber jet assembly 100 of the first embodiment of the present invention is shown.

[0076] The chamber jet assembly 100 according to the first embodiment includes a shroud 110, a central jet member 120, and a side jet member 130. The shroud 110 includes a top wall 111 and a side wall 112. The top wall 111 is configured as a circle. The side wall 112 is configured as an annular structure extending Cd in the circumferential direction of the top wall 111. In the installed state of the shroud 110 mounted to a chemical vapor deposition apparatus, the shroud 110 is a bell-shaped structure with its opening facing downwards. Gas is distributed within the shroud 110. The shroud 110 is typically positioned above a CHUCK disk. The CHUCK disk secures the substrate or wafer (hereinafter referred to as a "wafer") by mechanical clamping, vacuum adsorption, or electrostatic adsorption to prevent displacement or vibration during the reaction process, ensuring uniformity of thin film deposition. The central jet member 120 is disposed at the center of the top wall 111 to facilitate jetting into the central region of the wafer under ventilated conditions. The side jet member 130 is connected to the side wall 112. The side jet member 130 includes a plurality of edge jets 131 and at least two intermediate jets 132. Each of the plurality of edge jets 131 is spaced apart along the circumferential direction Cd of the sidewall 112. Each edge jet 131 is configured to extend a first length from the sidewall 112 toward the center of the housing 110 in the radial direction Rd of the sidewall 112. Each edge jet 131 has an edge outlet 131a adapted to jettison gas into the edge region of the wafer. Each of the at least two intermediate jets 132 is spaced apart along the circumferential direction Cd of the sidewall 112. Each intermediate jet 132 is configured to extend a second length from the sidewall 112 toward the center of the housing 110 in the radial direction Rd of the sidewall 112. The second length is greater than the first length. Each intermediate jet 132 has an intermediate outlet 132a. The central exhaust port 132a is located between the central jet member 120 and the edge jet member 131 along the radial direction Rd of the sidewall 112. The central exhaust port 132a is adapted to jet into the central region of the wafer.

[0077] The central region, intermediate region, and edge region are three areas arranged from the inside out along the radial direction Rd of the wafer. The central region can usually be understood as a circular region. The intermediate and edge regions can usually be understood as annular regions. The central region, intermediate region, and edge region are arranged concentrically.

[0078] The intermediate jet 132 includes a main duct 133 and at least two branch ducts 134. The main duct 133 is connected to the sidewall 112. The main duct 133 extends radially Rd along the sidewall 112 toward the center of the shroud 110. The branch ducts 134 connect to the main duct 133. Each intermediate jet 132 includes a plurality of intermediate air outlets 132a. The plurality of intermediate air outlets 132a are located at least in the branch ducts 134.

[0079] According to the chamber jet assembly 100 of the first embodiment, by adding an intermediate jet member 132, gas can be supplied more directly to the central region of the wafer, thereby enabling the central region of the wafer to have a sufficient distribution of reactive gas, similar to the central and edge regions of the wafer. Compared to the prior art, not only can the edge region of the wafer be jetted via the edge jet member 131 and the central region of the wafer be jetted via the central jet member 120, but the central region of the wafer located between the central and edge regions can also be jetted via the intermediate jet member 132. This allows for a more uniform distribution of silicon-containing gases, such as silane, in the central, intermediate, and edge regions of the wafer. Consequently, during the filling of the dielectric layer using HDP trench isolation filling technology, the uniformity of the deposited film thickness is improved, i.e., the flatness of the film layer is improved. This not only improves the flatness of HDP deposition but also benefits subsequent photolithography processes and improves the speed and reliability of device signal transmission, etc. Since the intermediate jet component 132 has a main pipe 133 and at least two branch pipes 134, it can supply air to each branch pipe 134 through the main pipe 133 and jet through the middle air outlet 132a set in each branch pipe 134, thereby increasing the jet range and further improving the uniformity and efficiency of jet.

[0080] In some examples, each of the at least two branch pipes 134 is located on at least one side of the main pipe 133 along the extension direction intersecting the main pipe 133.

[0081] exist Figures 1 to 5 In the example shown, each branch pipe 134 is located on both sides of the main pipe 133 along the direction intersecting the main pipe 133.

[0082] In other examples, each of the at least two branch pipes 134 is arranged at intervals along the extension direction of the main pipe 133.

[0083] In other examples, each of the at least two branch pipes 134 is located on at least one side of the main pipe 133 along a direction intersecting the main pipe 133. Furthermore, each of the at least two branch pipes 134 is spaced apart along the extension direction of the main pipe 133.

[0084] For example, the branch pipe 134 is arranged at intervals with the central jet member 120 and the edge jet member 131 along the radial direction Rd of the sidewall 112. This can reduce or avoid jet interference between the central jet member 120 and the branch pipe 134, and between the edge jet member 131 and the branch pipe 134, thereby reducing jet resistance, improving the uniformity of gas distribution at the boundary of adjacent areas, and the uniformity of gas distribution along the radial direction Rd in the middle area.

[0085] For example, the intermediate jet 132 has an inlet end and a terminal end. The inlet end is located at the end of the main pipe 133 away from the branch pipe 134. For each intermediate jet 132, the inlet end can be unique. The terminal end is located at the end of the branch pipe 134 away from the main pipe 133. For each branch pipe 134, since each branch pipe 134 may have multiple subdivided branches, each branch pipe 134 may have more than one terminal end. The distribution density of intermediate outlets 132a increases along the gas flow path from the inlet end to the terminal end. In other words, the spacing between adjacent intermediate outlets 132a decreases along the gas flow path from the inlet end to the terminal end. This is because the gas pressure decreases with distance from the inlet end. This reduces the variability in gas distribution and further improves the uniformity of gas supply.

[0086] See Figures 1 to 5 For example, the branch pipe 134 includes a first branch pipe section 135 and a second branch pipe section 136. One end of the first branch pipe section 135 is connected to the main pipe 133. The first branch pipe section 135 extends in a direction intersecting the main pipe 133. The first branch pipe section 135 corresponds to a first-level branch pipe of the main pipe 133. One end of the second branch pipe section 136 is connected to the first branch pipe section 135. The second branch pipe section 136 extends in a direction intersecting the first branch pipe section 135. The second branch pipe section 136 is spaced apart from the main pipe 133. The second branch pipe section 136 corresponds to a first-level branch pipe of the first branch pipe section 135 and a second-level branch pipe of the main pipe 133. This increases the distribution range of the branch pipes 134, thereby improving the uniformity of gas supply.

[0087] Optionally, the first branch pipe 135 extends in a direction parallel to the circumference of the sidewall 112. This accommodates the annular distribution of the central region of the wafer, thereby facilitating the uniform supply of gas along the circumferential direction Cd of the wafer in the central region.

[0088] Optionally, the second branch pipe 136 extends along the radial direction Rd of the sidewall 112. The second branch pipe 136 is a straight pipe. This facilitates uniform gas supply along the radial direction Rd of the wafer in the middle region of the wafer.

[0089] Furthermore, each branch pipe 134 has at least two second branch pipe sections 136. At least two second branch pipe sections 136 are disposed on both sides of the first branch pipe section 135 along a direction intersecting the first branch pipe section 135.

[0090] In some other embodiments, at least two second branch pipe portions 136 are spaced apart along the extension direction of the first branch pipe portion 135.

[0091] Optionally, each branch pipe 134 includes a first branch pipe section 135 and two second branch pipe sections 136. The two second branch pipe sections 136 are located at the end of the first branch pipe section 135 away from the main pipe 133. The two second branch pipe sections 136 are arranged opposite each other on both sides of the first branch pipe section 135 in a direction intersecting the first branch pipe section 135.

[0092] See Figure 3 For example, in each intermediate jet member 132, the orientation of at least a portion of the intermediate air outlet 132a is different from the orientation of at least another portion of the intermediate air outlet 132a. This can improve the jet range and the uniformity of the jet.

[0093] Furthermore, along the radial direction Rd of the sidewall 112, the minimum distance between the plurality of intermediate air outlets 132a of each side jet member 130 and the central jet member 120 is equal to the minimum distance from the plurality of intermediate air outlets 132a to the edge jet members 131. In each intermediate jet member 132, at least a portion of the intermediate air outlets 132a are configured to face the center of the shroud 110, and at least another portion of the intermediate air outlets 132a are configured to face the sidewall 112. This further improves the range and uniformity of the gas supplied by the intermediate jet members 132 in the radial direction Rd of the sidewall 112.

[0094] Furthermore, in each intermediate jet 132, at least a portion of the intermediate air outlet 132a is configured to face the adjacent intermediate jet 132. This improves the uniformity of air supply between the spacing regions of adjacent intermediate jets 132 and the location of the intermediate jet 132.

[0095] Optionally, the edge jet 131 and the middle jet 132 are located in the same horizontal plane parallel to the top wall 111. This reduces the space occupied by the edge jet 131 and the middle jet 132 in the direction perpendicular to the top wall 111, thereby improving the compactness of the side jet member 130.

[0096] Optionally, the branch pipe 134 and the main pipe 133 are located in the same horizontal plane parallel to the top wall 111. This reduces the space occupied by the branch pipe 134 and the main pipe 133 in the direction perpendicular to the top wall 111, thereby improving the compactness of the intermediate jet component 132.

[0097] Optionally, each edge outlet 131a and each intermediate outlet 132a is located in the same horizontal plane parallel to the top wall 111. This ensures that the edge jets 131 and intermediate jets 132a can supply gas to the wafer surface at the same height during use, thereby reducing the difference in vertical gas distribution between the middle and edge regions of the wafer.

[0098] Exemplarily, the groups of edge jets 131 are arranged at intervals along the circumferential direction Cd of the sidewall 112. Each group of edge jets 131 includes multiple edge jets 131. This improves the uniformity of the gas distribution in the circumferential direction Cd when all the edge jets 131 are viewed as a whole.

[0099] See Figures 1 to 5 Furthermore, each group of edge jets 131 includes three edge jets 131. In the circumferential direction Cd of the sidewall 112, the spacing between two adjacent groups of edge jets 131 is greater than the spacing between adjacent edge jets 131 in each group of edge jets 131.

[0100] Optionally, the chamber jet assembly 100 includes 12 sets of edge jets 131. Each set of edge jets 131 includes 3 edge jets 131. That is, the chamber jet assembly 100 includes 36 edge jets 131.

[0101] Alternatively, the central jet component 120 may employ a jet structure from the prior art, such as that disclosed in US2006196420A1. Figure 1 The upper gas supply nozzle, denoted by 40 in the accompanying drawing, is shown. The edge jet element 131 can employ a jet structure from the prior art, such as that in US2006196420A1. Figure 1 The nozzle is labeled 30 in the attached diagram.

[0102] For example, the intermediate jets 132 are arranged at equal intervals along the circumferential direction Cd of the sidewall 112. This improves the uniformity of the gas distribution in the circumferential direction Cd when all the intermediate jets 132 are viewed as a whole.

[0103] Optionally, the intermediate spray nozzle 132 generally includes an air passage and a nozzle. The nozzle of the intermediate spray nozzle 132 can be configured as the outlet of a conventional nozzle such as a standard nozzle. Some intermediate outlets 132a in each intermediate spray nozzle can be configured, for example, as flat fan-shaped, to allow the process gas to be ejected radially in a fan shape during spraying, thereby increasing the spray range. Such intermediate outlets 132a can be located at the end of the passage or at the intersection of adjacent passages. Other intermediate outlets 132a in each intermediate spray nozzle can be configured, for example, as circular, to reduce the spray range. Such intermediate outlets 132a can be located on the air passage between two adjacent intersections.

[0104] exist Figure 3 The air jet direction Jd is indicated at each intermediate air outlet 132a. The intermediate air outlets 132a located at the end of the first branch pipe section 135 and both ends of the second branch pipe section 136 can adopt an air outlet structure with a flat fan-shaped jet. The intermediate air outlet 132a of the first branch pipe section 135 located between the second branch pipe section 136 and the main pipe 133 can adopt an air outlet structure with a smaller jet range.

[0105] See Figures 1 to 3 There are six intermediate jet components 132. The six intermediate jet components 132 are arranged at intervals Cd in the circumferential direction of the side wall 112.

[0106] However, in other examples, the number of intermediate jet components 132 can be different. For example, the number of intermediate jet components 132 may be two, such as... Figure 4 As shown. For example, the number of intermediate jet components 132 is 12, such as... Figure 5 As shown.

[0107] It should be noted that, Figures 1 to 3 Only one radial direction Rd of the sidewall 112 is marked. Those skilled in the art will understand that the other radial directions of the sidewall 112 may have different arrow directions than the marked radial direction Rd. Figure 3 Only one of the many jet directions, Jd, is marked; other jet directions are indicated by the arrows marked exemplary around the central exhaust port 132a.

[0108] Second Implementation Method

[0109] Figure 6A chamber jet assembly 200 according to a second embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 232, the chamber jet assembly 200 according to the second embodiment has a substantially the same construction as the chamber jet assembly 100 according to the first embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0110] Similar to the chamber jet assembly 100 according to the first embodiment, the chamber jet assembly 200 according to the second embodiment includes a top wall 211, a side wall 212, a central jet member 220, an edge jet member 231, and an intermediate jet member 232.

[0111] The intermediate jetting component 232 includes a main pipe 233, a first branch pipe 235, and a second branch pipe 236. The main pipe 233 extends radially along the sidewall 212 in the direction Rd. The first branch pipe 235 extends circumferentially along the sidewall 212 in an arc shape in the direction Cd. The second branch pipe 236 extends radially along the sidewall 212 in the direction Rd. Furthermore, the main pipe 233 protrudes radially along the first branch pipe 235 from the side near the central jetting component 220. The portion of the main pipe 233 protruding from the first branch pipe 235 acts as another branch pipe, which, together with the first branch pipe 235 and the second branch pipe 236, can supply gas to the intermediate region of the wafer.

[0112] The chamber jet assembly 200 according to the second embodiment can achieve similar technical effects to the chamber jet assembly 100 according to the first embodiment.

[0113] Third Implementation Method

[0114] Figure 7 A chamber jet assembly 300 according to a third embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 332, the chamber jet assembly 300 according to the third embodiment has a substantially the same construction as the chamber jet assembly 200 according to the second embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0115] Similar to the chamber jet assembly 200 according to the second embodiment, the chamber jet assembly 300 according to the third embodiment includes a top wall 311, a side wall 312, a central jet member 320, an edge jet member 331, and an intermediate jet member 332.

[0116] The intermediate jet unit 332 includes a main pipe 333, a first branch pipe 335, and a second branch pipe 336. The main pipe 333 extends radially along the sidewall 312 in the direction Rd. The first branch pipe 335 extends circumferentially along the sidewall 312 in an arc shape along the direction Cd. The second branch pipe 336 extends radially along the sidewall 312 in the direction Rd. Each intermediate jet unit 332 has multiple first branch pipes 335. The multiple first branch pipes 335 are arranged at intervals along the extension direction of the main pipe 333. The lengths of two adjacent first branch pipes 335 may be different. The second branch pipe 336 is connected to at least a portion of the first branch pipes 335.

[0117] In the illustrated example, each intermediate jet member 332 has three pairs of first branch pipe sections 335. The three pairs of first branch pipe sections 335 are arranged at intervals along the extension direction of the main pipe 333. The middle pair of first branch pipe sections 335 has a second branch pipe section 336 at its end furthest from the main pipe 333. The pair of first branch pipe sections 335 closest to the central jet member 320 is located at the end of the main pipe 333.

[0118] In other examples, second branch pipe sections 336 may also be provided on the remaining first branch pipe sections 335, except for the middle pair of first branch pipe sections 335.

[0119] The chamber jet assembly 300 according to the third embodiment can achieve similar technical effects to the chamber jet assembly 100 according to the first embodiment.

[0120] Fourth Implementation Method

[0121] Figure 8 A chamber jet assembly 400 according to a fourth embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 432, the chamber jet assembly 400 according to the fourth embodiment has a substantially the same construction as the chamber jet assembly 100 according to the first embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0122] Similar to the chamber jet assembly 100 according to the first embodiment, the chamber jet assembly 400 according to the fourth embodiment includes a top wall 411, a side wall 412, a central jet member 420, an edge jet member 431, and an intermediate jet member 432.

[0123] The intermediate jet member 432 includes a main pipe 433 and a first branch pipe 435. The main pipe 433 extends radially along the side wall 412 in the direction Rd. The first branch pipe 435 extends circumferentially along the side wall 412 in the direction Cd in an arc shape. The first branch pipe 435 is located at the end of the main pipe 433 near the central jet member 420.

[0124] The chamber jet assembly 400 according to the fourth embodiment can achieve similar technical effects to the chamber jet assembly 100 of the first embodiment.

[0125] Fifth Implementation Method

[0126] Figure 9 A chamber jet assembly 500 according to a fifth embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 532, the chamber jet assembly 500 according to the fifth embodiment has a substantially the same construction as the chamber jet assembly 400 according to the fourth embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0127] Similar to the chamber jet assembly 400 according to the fourth embodiment, the chamber jet assembly 500 according to the fifth embodiment includes a top wall 511, a side wall 512, a central jet member 520, an edge jet member 531, and an intermediate jet member 532.

[0128] The intermediate jetting component 532 includes a main conduit 533 and a first branch conduit 535. The main conduit 533 extends radially along the sidewall 512 in the direction Rd. The first branch conduit 535 extends circumferentially along the sidewall 512 in an arc shape. The main conduit 533 protrudes from the first branch conduit 535 on the side near the central jetting component 520. The portion of the main conduit 533 protruding from the first branch conduit 535 acts as another branch conduit, which, together with the first branch conduit 535, can supply gas to the intermediate region of the wafer.

[0129] The chamber jet assembly 500 according to the fifth embodiment can achieve similar technical effects to the chamber jet assembly 100 of the first embodiment.

[0130] Sixth Implementation Method

[0131] Figure 10 A chamber jet assembly 600 according to a sixth embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 632, the chamber jet assembly 600 according to the sixth embodiment has a substantially the same construction as the chamber jet assembly 300 according to the third embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0132] Similar to the chamber jet assembly 300 according to the third embodiment, the chamber jet assembly 600 according to the sixth embodiment includes a top wall 611, a side wall 612, a central jet member 620, an edge jet member 631, and an intermediate jet member 632.

[0133] The intermediate jet unit 632 includes a main pipe 633 and a first branch pipe 635. The main pipe 633 extends radially along the sidewall 612 in the direction Rd. The first branch pipe 635 extends circumferentially along the sidewall 612 in an arc shape in the direction Cd. Each intermediate jet unit 632 has multiple first branch pipes 635. The multiple first branch pipes 635 are arranged at intervals along the extension direction of the main pipe 633. The lengths of two adjacent first branch pipes 635 may be different.

[0134] In the illustrated example, each intermediate jet member 632 has three pairs of first branch pipe sections 635. The three pairs of first branch pipe sections 635 are arranged at intervals along the extension direction of the main pipe 633. The pair of first branch pipe sections 635 closest to the central jet member 620 is located at the end of the main pipe 633.

[0135] In other examples, the number of first branch pipes 635 of each intermediate jet 632 can be one, two, four, or any number other than three.

[0136] The chamber jet assembly 600 according to the sixth embodiment can achieve similar technical effects to the chamber jet assembly 100 of the first embodiment.

[0137] Seventh Implementation Method

[0138] Figure 11 A chamber jet assembly 700 according to a seventh embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 732, the chamber jet assembly 700 according to the seventh embodiment has a substantially the same construction as the chamber jet assembly 100 according to the first embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0139] Similar to the chamber jet assembly 100 according to the first embodiment, the chamber jet assembly 700 according to the seventh embodiment includes a top wall 711, a side wall 712, a central jet member 720, an edge jet member 731, and an intermediate jet member 732.

[0140] The intermediate jet member 732 includes a main pipe 733, a first branch pipe 735, and a second branch pipe 736. The main pipe 733 extends radially along the sidewall 712 in the direction Rd. The first branch pipe 735 extends circumferentially along the sidewall 712 in an arc shape in the direction Cd. The second branch pipe 736 extends radially along the sidewall 712 in the direction Rd. Each intermediate jet member 732 has at least two second branch pipes 736. The second branch pipes 736 are spaced apart in the extending direction of the first branch pipe 735.

[0141] In the illustrated example, each first branch pipe section 735 is provided with two second branch pipe sections 736. One of the two branch pipe sections is located at the end of the first branch pipe section 735 away from the main pipe 733, and the other is located at a certain position in the middle of the first branch pipe section 735.

[0142] The chamber jet assembly 700 according to the seventh embodiment can achieve similar technical effects to the chamber jet assembly 100 of the first embodiment.

[0143] Eighth Implementation Method

[0144] Figure 12 A chamber jet assembly 800 according to the eighth embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 832, the chamber jet assembly 800 according to the eighth embodiment has a substantially the same construction as the chamber jet assembly 400 according to the fourth embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0145] Similar to the chamber jet assembly 400 according to the fourth embodiment, the chamber jet assembly 800 according to the eighth embodiment includes a top wall 811, a side wall 812, a central jet member 820, an edge jet member 831, and an intermediate jet member 832.

[0146] The intermediate jet component 832 includes a main pipe 833 and a first branch pipe 835. The main pipe 833 extends along the radial direction Rd of the sidewall 812. The first branch pipe 835 extends along a direction inclined to the radial direction Rd of the sidewall 812. Thus, the first branch pipe 835 has both a component along the circumferential direction Cd of the sidewall 812 and a component along the radial direction Rd of the sidewall 812.

[0147] In the illustrated example, the intermediate jet member 832 includes two first branch pipe sections 835 arranged opposite each other. The first branch pipe sections 835 are connected to the ends of the main pipe 833 near the central jet member 820. Thus, the overall shape of the intermediate jet member 832 is Y-shaped or approximately Y-shaped.

[0148] In other examples, the extension direction of the first branch pipe 835 may not be a straight line. The extension direction of the first branch pipe 835 may be, for example, a curved line, a combination of a straight line and a curve, a broken line, or the like.

[0149] The chamber jet assembly 800 according to the eighth embodiment can achieve similar technical effects to the chamber jet assembly 100 of the first embodiment.

[0150] Ninth Implementation Method

[0151] Figure 13 A chamber jet assembly 900 according to a ninth embodiment of the present invention is schematically shown. Except for the structure of the intermediate jet member 932, the chamber jet assembly 900 according to the ninth embodiment has a substantially the same construction as the chamber jet assembly 800 according to the eighth embodiment, wherein structures with the same function are given the same or similar reference numerals. Therefore, for the sake of brevity, only the distinguishing features will be described in detail here.

[0152] Similar to the chamber jet assembly 800 according to the eighth embodiment, the chamber jet assembly 900 according to the ninth embodiment includes a top wall 911, a side wall 912, a central jet member 920, an edge jet member 931, and an intermediate jet member 932.

[0153] The intermediate jetting component 932 includes a main conduit 933 and a first branch conduit 935. The main conduit 933 extends radially along the sidewall 912 in the direction Rd. The first branch conduit 935 extends in a direction inclined to the radial direction Rd of the sidewall 912. Thus, the first branch conduit 935 has both a component along the circumferential direction Cd of the sidewall 912 and a component along the radial direction Rd of the sidewall 912. The main conduit 933 protrudes along the radial direction Rd of the sidewall 912 from the side of the first branch conduit 935 near the central jetting component 920. The portion of the main conduit 933 protruding from the first branch conduit 935 acts as another branch conduit, which, together with the first branch conduit 935, can supply gas to the central region of the wafer.

[0154] The chamber jet assembly 900 according to the ninth embodiment can achieve similar technical effects to the chamber jet assembly 100 of the first embodiment.

[0155] Another aspect of this invention provides a chemical vapor deposition apparatus (not shown). The chemical vapor deposition apparatus includes the chamber jet assembly 100 described above.

[0156] According to the chemical vapor deposition apparatus of this invention, by applying the aforementioned chamber jet assembly 100, silicon-containing gases such as silane can be more uniformly distributed in the central, intermediate, and edge regions of the wafer. This improves the uniformity of the deposited film thickness, i.e., the flatness of the film, during the filling of the dielectric layer using HDP trench isolation filling technology. Consequently, the flatness of the dielectric layer deposited using HDP trench isolation filling technology can be effectively improved, which helps to improve subsequent photolithography processes and the speed and reliability of device signal transmission, etc. Especially in the case of inter-metal dielectric (IMD) layers deposited using HDP trench isolation filling technology, the improved flatness of the IMD layer helps to improve subsequent photolithography processes and the speed and reliability of device signal transmission, etc.

[0157] Unless otherwise defined, the technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for descriptive purposes only and is not intended to limit the scope of the invention. Terms such as “set” appearing herein can refer to either a component being directly attached to another component or a component being attached to another component via an intermediary. A feature described in one embodiment may be applied, alone or in combination with other features, to another embodiment, unless that feature is not applicable in that other embodiment or is otherwise stated.

[0158] This utility model has been described through the above embodiments. However, it should be understood that the above embodiments are for illustrative purposes only and are not intended to limit this utility model to the described embodiments. Those skilled in the art will understand that many more variations and modifications can be made based on the teachings of this utility model, and all such variations and modifications fall within the scope of protection claimed by this utility model.

Claims

1. A chamber jet assembly, characterized in that, The chamber jet assembly includes: A cover, the cover including a top wall and side walls, the top wall being constructed in a circular shape, and the side walls being constructed in an annular structure extending in the circumferential direction of the top wall; A central jetting member, disposed at the center of the top wall, adapted to jet gas into the central region of the wafer; and A side jet member, the side jet member being connected to the sidewall, the side jet member comprising: Multiple sets of edge jets, each set of edge jets being arranged at intervals along the circumferential direction of the sidewall, the edge jets being configured to extend a first length from the sidewall toward the center of the cover in the radial direction of the sidewall, the edge jets having edge outlets adapted to jettison gas into the edge region of the wafer. At least two intermediate jets are provided, each of which is spaced apart circumferentially along the sidewall. Each intermediate jet is configured to extend a second length, greater than a first length, from the sidewall toward the center of the housing in a radial direction along the sidewall. Each intermediate jet has a central outlet located radially along the sidewall between the central jet member and the edge jet members. The central outlet is adapted to jet into the central region of the wafer. The intermediate jet component includes: A main pipe, which is connected to the sidewall and extends radially toward the center of the enclosure along the sidewall; and At least two branch pipes are provided, the branch pipes connecting to the main pipe, each of the at least two branch pipes being located on at least one side of the main pipe along a direction intersecting the main pipe, and / or each of the at least two branch pipes being arranged at intervals along the extension direction of the main pipe. Each of the intermediate jet components includes a plurality of intermediate air outlets, and the plurality of intermediate air outlets are provided at least in the branch pipe.

2. The chamber jet assembly according to claim 1, characterized in that, The branch pipes are arranged at intervals with the central jet component and the edge jet component along the radial direction of the sidewall.

3. The chamber jet assembly according to claim 1, characterized in that, The intermediate jet component has an air inlet end and a terminal end. The air inlet end is located at the end of the main pipe away from the branch pipe, and the terminal end is located at the end of the branch pipe away from the main pipe. Along the gas flow path from the inlet end to the outlet end, the distribution density of the intermediate outlets increases, or the distance between adjacent intermediate outlets decreases.

4. The chamber jet assembly according to claim 2 or 3, characterized in that, The branch pipeline includes: A first branch pipe section, one end of which is connected to the main pipe, and the first branch pipe section extends along a direction intersecting the main pipe. The second branch pipe section has one end connected to the first branch pipe section, and the second branch pipe section extends along a direction intersecting the first branch pipe section. The second branch pipe section is spaced apart from the main pipe.

5. The chamber jet assembly according to claim 4, characterized in that, The number of the second branch pipe sections is at least two, and the at least two second branch pipe sections are arranged on both sides of the first branch pipe section along the direction intersecting the first branch pipe section, and / or the at least two second branch pipe sections are arranged at intervals along the extension direction of the first branch pipe section.

6. The chamber jet assembly according to claim 4, characterized in that, In each of the intermediate jets, the orientation of at least a portion of the intermediate air outlets is different from the orientation of at least another portion of the intermediate air outlets.

7. The chamber jet assembly according to any one of claims 1 to 3, characterized in that, Along the radial direction of the sidewall, the minimum distance between the plurality of intermediate air outlets of each of the side jet members and the central jet member is equal to the minimum distance from the plurality of intermediate air outlets to the edge jet members; In each of the intermediate jets, at least a portion of the intermediate air outlet is configured to face the center of the shroud, and at least another portion of the intermediate air outlet is configured to face the sidewall.

8. The chamber jet assembly according to claim 7, characterized in that, In each of the intermediate jets, at least a portion of the intermediate outlets are configured to face the adjacent intermediate jet.

9. The chamber jet assembly according to any one of claims 1 to 3, characterized in that, The edge jet and the middle jet are located in the same horizontal plane parallel to the top wall; and / or The branch pipe and the main pipe are located in the same horizontal plane parallel to the top wall; and / or Each of the edge air outlets and each of the middle air outlets are located in the same horizontal plane parallel to the top wall.

10. A chemical vapor deposition apparatus, characterized in that, The chemical vapor deposition apparatus includes a chamber jet assembly as described in any one of claims 1 to 9.

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