Reaction chamber structure and silicon carbide epitaxy equipment

Abstract

The utility model provides a reaction chamber structure and silicon carbide epitaxial equipment, and relates to the field of semiconductor manufacturing. The reaction chamber structure comprises a heat conduction assembly, the heat conduction assembly comprises a plurality of deposition pieces, the deposition pieces are provided with through deposition channels, and the deposition channels are used for containing base materials and enabling reaction gas introduced into the deposition channels to flow in the first direction; the multiple deposition pieces are sequentially arranged in the first direction, and the deposition channels of the adjacent deposition pieces are communicated; the rear end, in the first direction, of the heat conduction assembly is provided with a first position, at least one deposition piece is arranged at the first position, and the adjacent deposition pieces are detachably connected so that the deposition pieces located at the first position can be transferred to the front side of the first position. The silicon carbide epitaxial equipment provided by the utility model comprises the reaction chamber structure in any one of the embodiments. The reaction chamber structure and the silicon carbide epitaxy equipment provided by the embodiment of the utility model are longer in service life.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, specifically to reaction chamber structure and silicon carbide epitaxial equipment. Background Technology

[0002] In related technologies, a reaction chamber structure, including a heating element and a heat-conducting element, is used to achieve silicon carbide epitaxy. To grow high-quality thin films on a silicon carbide substrate, the substrate is typically placed within a reaction channel formed by the heat-conducting element. After the reaction channel is heated by the heating element, reactive gases are blown into it, allowing the reactive gases to deposit a thin film on the high-temperature substrate surface. However, because the reactive gases also undergo side reactions on the inner wall of the high-temperature reaction channel, the by-reaction products located upstream of the substrate gradually accumulate over long-term use, eventually affecting substrate deposition. Therefore, the heat-conducting element needs to be replaced periodically with a new one after a certain period of use, resulting in a relatively short service life. Utility Model Content

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. To this end, this invention proposes a reaction chamber structure with a longer service life.

[0004] This invention also proposes a silicon carbide epitaxial device having the above-mentioned reaction chamber structure.

[0005] According to a first aspect embodiment of the present invention, a reaction chamber structure is used to generate silicon carbide on the surface of a substrate, comprising:

[0006] A thermally conductive assembly includes a plurality of deposition elements having through deposition channels for accommodating a substrate and for allowing a reactive gas introduced into the deposition channels to flow in a first direction; the plurality of deposition elements are arranged sequentially along the first direction, and the deposition channels of adjacent deposition elements are connected.

[0007] The heat-conducting assembly has a first position at its rear end along the first direction, at least one of the deposited elements is disposed at the first position, and adjacent deposited elements are detachably connected to allow the deposited element located at the first position to be transferred to the front side of the first position.

[0008] The reaction chamber structure according to the embodiments of this utility model has at least the following beneficial effects:

[0009] After multiple deposition units are connected, the interconnected deposition channels allow reactive gases to flow in. These gases flow from one deposition channel to another along a first direction. During this flow, the substrate contained within the deposition channels grows a thin film. In this process, the concentration of the reactive gases gradually decreases along the first direction due to continuous reactions with the deposition units and substrate. The rate of by-product generation is lower in the deposition units located at the front of the first direction. Even when the accumulation of by-products in the deposition units located at the rear of the first direction reaches a level that affects the formation of the substrate film, the accumulation of by-products in the deposition units located at the front of the first direction remains at a level that does not affect the formation of the substrate film. At this point, the upstream deposition unit can be disassembled and moved downstream, allowing the deposition unit originally located at the front of the first direction to be positioned at the rear of the first direction. Reactive gases can then continue to enter the deposition channels, allowing the substrate to continue forming a thin film. This solution utilizes the deposition unit originally located at the front of the first direction to allow the substrate to continue forming a thin film, effectively extending the service life of the thermally conductive components.

[0010] According to some embodiments of the present invention, the heat-conducting component includes at least three deposition elements, one of which is defined as a first deposition element, and two of which are defined as second deposition elements, wherein the deposition channel of the first deposition element is used to accommodate a substrate;

[0011] The first deposition element is detachably connected to two second deposition elements on opposite sides in the first direction, so that the two second deposition elements can be interchanged.

[0012] According to some embodiments of the present invention, the first deposition member includes two first connecting portions, which are respectively located at opposite ends of the first deposition member along the first direction; each second deposition member includes a second connecting portion, which is located on the side of the second deposition member close to the first deposition member and is detachably connected to the first connecting portion.

[0013] According to some embodiments of the present invention, the first connecting part has a matching hole, and the second connecting part includes a matching shaft; when the first connecting part is connected to the second connecting part, the matching shaft cooperates with the matching hole;

[0014] Alternatively, the first connecting part has a matching shaft, and the second connecting part includes a matching hole, wherein when the first connecting part is connected to the second connecting part, the matching shaft engages with the matching hole.

[0015] According to some embodiments of the present invention, the heat-conducting component includes at least three second deposition elements, at least one of the second deposition elements is detachably connected to the rear end of the first deposition element along the first direction, at least two of the second deposition elements are arranged sequentially and detachably connected to the front end of the first deposition element along the first direction, and the two second deposition elements located at the front end and the rear end of the first deposition element can be interchanged with each other.

[0016] According to some embodiments of the present invention, the heat-conducting component includes at least three deposition elements, one of which is defined as a first deposition element, one of which is defined as a second deposition element, and one of which is defined as a third deposition element; the heat-conducting component has a first use state and a second use state. In the first use state, the first deposition element, the second deposition element, and the third deposition element are detachably connected sequentially along the first direction; in the second use state, the second deposition element, the third deposition element, and the first deposition element are detachably connected sequentially along the first direction.

[0017] According to some embodiments of the present invention, the reaction chamber structure further includes a tray for supporting a substrate; in the first use state, the tray is detachably connected to the second deposition element; in the second use state, the tray is detachably connected to the third deposition element.

[0018] According to some embodiments of the present invention, the deposition component includes an upper plate, a lower plate, a first side plate, and a second side plate. The upper plate, the lower plate, the first side plate, and the second side plate each have a first surface and a second surface facing away from each other in their respective thickness directions. The opposite sides of the upper plate are detachably connected to one end of the first side plate and one end of the second side plate, respectively. The opposite sides of the lower plate are detachably connected to one end of the first side plate and one end of the second side plate, respectively, so that the deposition component can switch between a first installation state and a second installation state.

[0019] In the first installation state, the first surface of the upper plate and the first surface of the lower plate are arranged facing each other, the first surface of the first side plate and the first surface of the second side plate are arranged facing each other, and the first surface of the upper plate, the first surface of the lower plate, the first surface of the first side plate and the first surface of the second side plate together define the deposition channel.

[0020] In the second installation state, the second surface of the upper plate and the second surface of the lower plate are arranged facing each other, the second surface of the first side plate and the second surface of the second side plate are arranged facing each other, and the second surface of the upper plate, the second surface of the lower plate, the second surface of the first side plate and the second surface of the second side plate together define the deposition channel.

[0021] According to some embodiments of the present invention, the inner wall of the deposition channel is provided with a silicon carbide coating or a tantalum carbide coating, and / or the deposition element is made of graphite material.

[0022] According to a second aspect embodiment of the present invention, the silicon carbide epitaxial apparatus has the reaction chamber structure as described in any of the above embodiments;

[0023] An air intake component has an air intake channel for introducing the reaction gas; the air intake component is disposed on the rear side of the first position along the first direction, and the air intake channel is connected to the deposition channel of the deposition component located at the first position;

[0024] A heating component for heating the heat-conducting component.

[0025] The silicon carbide epitaxial apparatus according to embodiments of the present invention has at least the following beneficial effects: By-reaction products in the deposition channel of the deposition element located at the first position accumulate first to a degree affecting the formation of a thin film on the substrate. At this point, the operator can disassemble and move the deposition element located at the first position to the front side of the first position, so that the deposition element originally located at the front side in the first direction is placed at the rear side in the first direction. Reactive gases can continue to enter the deposition channel, allowing the substrate to continue forming a thin film. The above solution utilizes the deposition element originally located at the front side in the first direction to allow the substrate to continue forming a thin film, effectively extending the service life of the thermally conductive components.

[0026] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0027] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0028] Figure 1 This is a cross-sectional schematic diagram of a silicon carbide epitaxial apparatus according to some embodiments of the first aspect of this utility model;

[0029] Figure 2 for Figure 1 A cross-sectional view of the intermediate reaction chamber structure from another direction;

[0030] Figure 3 for Figure 1 Schematic diagram of the structure of the heat-conducting component;

[0031] Figure 4 for Figure 3 A magnified view of a section at point A in the middle;

[0032] Figure 5 for Figure 3A cross-sectional view of the thermally conductive component in another direction;

[0033] Figure 6 This is a cross-sectional schematic diagram of the reaction chamber structure according to some embodiments of the second aspect of this utility model;

[0034] Figure 7 for Figure 6 A cross-sectional schematic diagram of the intermediate reaction chamber structure in another state;

[0035] Figure 8 This is a cross-sectional schematic diagram of the reaction chamber structure according to some embodiments of the third aspect of this utility model.

[0036] Figure label:

[0037] Reaction chamber structure 10;

[0038] Thermal conductive component 100, first position 110, deposition component 120, first deposition component 120A, second deposition component 120B, third deposition component 120C, deposition channel 121, upper plate 122, lower plate 123, first side plate 124, second side plate 125, first connecting part 126, second connecting part 127, matching hole 128, matching shaft 129;

[0039] Pallet 200;

[0040] Intake component 20, intake passage 21;

[0041] Heating component 30, heating element 31, heat insulation element 32. Detailed Implementation

[0042] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0043] In the description of this utility model, it should be understood that the directional descriptions, such as up, down, front, back, left, right, etc., indicate the directional or positional relationship based on the directional or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0044] In the description of this utility model, "several" means one or more, "multiple" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0045] In the description of this utility model, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.

[0046] In the description of this utility model, the terms "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0047] Please refer to Figures 1 to 8 As shown, this invention proposes a reaction chamber structure 10 for generating silicon carbide on the surface of a substrate. The reaction chamber structure 10 of this invention includes a heat-conducting component 100.

[0048] Please refer to Figures 3 to 4 As shown, the heat-conducting component 100 of this utility model includes a plurality of deposition elements 120, each deposition element 120 having a through deposition channel 121 for accommodating a substrate and for allowing the reaction gas introduced into the deposition channel 121 to flow in a first direction; the plurality of deposition elements 120 are arranged sequentially along the first direction, and the deposition channels 121 of adjacent deposition elements 120 are connected.

[0049] Multiple interconnected deposition channels 121 allow reactive gases to flow through them. During production, the reactive gases can be blown in from the deposition channel 121 located at the rear end of the first direction, flow through the multiple deposition channels 121 along the first direction, and finally flow out from the deposition channel 121 at the front end of the first direction. Those skilled in the art can place the substrate to which silicon carbide is to be formed into any one of the deposition channels 121, or into two adjacent deposition channels 121, so that the reactive gases, as they flow through the multiple deposition channels 121, pass over the substrate and cause the substrate to grow a silicon carbide thin film.

[0050] Please refer to Figure 3As shown, the heat-conducting component 100 of this utility model has a first position 110 at its rear end along a first direction, at least one deposition element 120 is disposed at the first position 110, and adjacent deposition elements 120 are detachably connected so that the deposition element 120 located at the first position 110 is transferred to the front side of the first position 110.

[0051] As the reactive gas flows through multiple deposition channels 121 along the first direction, the concentration of the reactive gas gradually decreases along the first direction due to continuous reactions with the deposition element 120 and the substrate during the flow. The rate of generation of by-reaction products in the deposition element 120 located at the front of the first direction is low. Therefore, after the heat-conducting component 100 has been working for a certain period of time, when the accumulation of by-reaction products in the deposition element 120 located at the rear of the first direction reaches a level that will affect the formation of the substrate film, the accumulation of by-reaction products in the deposition element 120 located at the front of the first direction is still at a level that will not affect the formation of the substrate film.

[0052] In this invention, the reactive gas is blown in from the deposition channel 121 at the rear end of the first direction and flows through multiple deposition channels 121 along the first direction. The by-reaction products in the deposition channel 121 of the deposition element 120 at the first position 110 will accumulate first to a degree that affects the formation of the substrate film. Before the by-reaction products in the deposition channel 121 of the deposition element 120 at the first position 110 accumulate to a degree that affects the formation of the substrate film, the operator can disassemble and move the deposition element 120 at the first position 110 to the front side of the first position 110, so that the deposition element 120 originally located at the front side of the first direction is placed at the rear side of the first direction. At this time, the accumulation of by-reaction products in the deposition element 120 located at the rear side of the first direction is still at a level that will not affect the formation of the substrate film, and the reactive gas can continue to enter the deposition channel 121, allowing the substrate to continue forming a film. The above solution can utilize the replacement position of the deposition element 120 originally located at the front side of the first direction with the deposition element 120 located at the first position to allow the substrate to continue forming a film, effectively extending the service life of the heat-conducting component 100.

[0053] It should be noted that after the workers move the deposition component 120 originally located at the first position 110 to the rear side of the first position 110, they can also adjust the position of the entire heat-conducting assembly 100 within the reaction chamber structure 10, or swap the positions of each deposition component 120 of the heat-conducting assembly 100, thereby adapting it to other parts of the reaction chamber structure 10.

[0054] Without departing from the inventive concept of this utility model, this utility model does not limit the connection relationship between the heat-conducting component 100 and other components of the silicon carbide epitaxial device. In some embodiments, the deposition components 120 are all pipe structures, and the outer periphery of the deposition component 120 can cooperate with other components of the silicon carbide epitaxial device. After adjusting the relative positions between the various deposition components 120 of the heat-conducting component 100, the heat-conducting component 100 can cooperate with other components of the silicon carbide epitaxial device through several deposition components 120, thereby realizing the installation of the heat-conducting component 100.

[0055] Please refer to Figure 2 , Figure 3 As shown, in some embodiments, the silicon carbide epitaxial apparatus includes a heating element 31, and each deposition element 120 in the thermally conductive assembly 100 can be directly placed on the upper surface of the heating element 31. When adjusting the deposition element 120 located at the first position 110 in the above embodiment, the operator can place it at different positions on the upper surface of the heating element 31.

[0056] Without departing from the inventive concept of this utility model, this utility model does not limit the detachable connection methods between different deposition components 120. Please refer to... Figure 2 , Figure 3 As shown, in some embodiments, each depositing element 120 has a first contact surface and a second contact surface on opposite sides in a first direction, and the first contact surface of each depositing element 120 is in contact with the second contact surface of the adjacent depositing element 120 to achieve a detachable connection between two adjacent depositing elements 120.

[0057] In other embodiments, the different deposited elements 120 are detachably connected by bolts, pins or other connectors.

[0058] Without departing from the inventive concept of this utility model, the present utility model does not limit the number of deposited elements 120. In some embodiments, the heat-conducting assembly 100 includes two deposited elements 120. When it is necessary to move the deposited element 120 of the first position 110 to the front side of the first position 110, the positions of the two deposited elements 120 can be interchanged, thereby extending the service life of the heat-conducting assembly 100.

[0059] Without departing from the inventive concept of this utility model, the heat-conducting component 100 may further include a plurality of deposited elements 120. In some embodiments, the heat-conducting component 100 includes at least three deposited elements 120. When it is necessary to move the first position 110 to the front side of the first position 110, those skilled in the art may selectively move the deposited element 120 of the first position 110 to the rearmost end, or move the deposited element 120 of the first position 110 between the two deposited elements 120 originally located behind the first position 110.

[0060] As a preferred option, please refer to Figure 3 As shown, in some embodiments, the heat-conducting assembly 100 includes at least three deposition elements 120, one of which is defined as a first deposition element 120A, and the other two as second deposition elements 120B. The deposition channel 121 of the first deposition element 120A is used to accommodate the substrate. The two opposite sides of the first deposition element 120A are detachably connected to the two second deposition elements 120B, so that the two second deposition elements 120B can be interchanged. Through the above scheme, the operator can transfer the deposition element 120 originally located at the first position 110 to the front side of the first position 110 by interchangeably replacing the two second deposition elements 120B. Compared with other transfer methods, the above embodiment only requires swapping the second deposition elements 120B on both sides of the first deposition element 120A in the first direction when moving the deposition element 120 located at the first position 110, without moving the first deposition element 120A, simplifying the adjustment process of the heat-conducting assembly 100 and improving the adjustment efficiency.

[0061] Based on the above scheme, the structure of the first deposition element 120A can be adjusted individually. Exemplarily, in some embodiments, the inner wall of the deposition channel 121 of the first deposition element 120A has a higher processing precision than that of the second deposition element 120B. In some embodiments, the first deposition element 120A includes structures for further cooperation with other components of the silicon carbide epitaxial apparatus. In some embodiments, the first deposition element 120A is provided with a snap-fit ​​structure for detachably connecting to a tray 200 for carrying a substrate. In some embodiments, the inner wall of the deposition channel 121 of the first deposition element 120A is also coated with a silicon carbide coating or a tantalum carbide coating.

[0062] Further, please refer to Figure 3 , Figure 4 As shown, in some embodiments, the first deposition element 120A includes two first connecting portions 126, which are located at opposite ends of the first deposition element 120A along a first direction. Each second deposition element 120B includes a second connecting portion 127, which is located on the side of the second deposition element 120B closer to the first deposition element 120A and is detachably connected to the first connecting portion 126.

[0063] Please refer to Figure 3As shown, during the flow of the reactive gas through each deposition channel 121 in the first direction, the concentration of the reactive gas gradually decreases along the first direction due to the reaction with the inner wall of the deposition element 120 during the flow. Therefore, for each deposition element 120, the accumulation of by-reaction products along the first direction also gradually decreases. Thus, after the heat-conducting assembly 100 has been operating for a certain period of time, for the two second deposition elements 120B connected to the first deposition element 120A on both sides in the first direction, the accumulation of by-reaction products is highest in the rearmost part of the second deposition element 120B located at the rear end of the first direction (i.e., at the first position 110), and lowest in the frontmost part of the second deposition element 120B located at the front end of the first direction.

[0064] When the operator needs to move the deposited element 120 located at the first position 110 to the front of the first position 110, the connection between the first connecting part 126 and the second connecting part 127 can be released. After swapping the positions of the two second deposited elements 120B, the second connecting part 127 and the first connecting part 126 can be reconnected. After the second deposited element 120B, which was originally located at the front end in the first direction, is moved to the first position 110 and connected to the first deposited element 120A, the accumulation of by-reaction products at the frontmost part is the lowest. Therefore, when the heat-conducting assembly 100 enters the working state again, the second deposited element 120B located at the first position 110 needs to accumulate for a longer time before reaching a level that affects the formation of the substrate film, and the service life of the heat-conducting assembly 100 is longer.

[0065] Based on the above scheme, the first connecting part 126 and the second connecting part 127 are different structures that can cooperate with each other. Workers can confirm the installation direction of the second deposited part 120B by checking the position of the second connecting part 127 on the second deposited part 120B, thereby avoiding the risk of assembly errors, improving the efficiency of adjusting the position of the deposited part 120, and ultimately improving the production efficiency of the silicon carbide deposition process.

[0066] As a preferred option, please refer to Figure 3 , Figure 4As shown, in some embodiments, the first connecting portion 126 has a matching hole 128, and the second connecting portion 127 includes a matching shaft 129; when the first connecting portion 126 is connected to the second connecting portion 127, the matching shaft 129 engages with the matching hole 128. In some embodiments, the first connecting portion 126 has a matching shaft 129, and the second connecting portion 127 includes a matching hole 128; when the first connecting portion 126 is connected to the second connecting portion 127, the matching shaft 129 engages with the matching hole 128. The above embodiments, through the engagement of the matching shaft 129 and the matching hole 128, can further improve the tightness of the connection between the first deposited part 120A and the second deposited part 120B, and can remind workers of the correct installation direction of the second deposited part 120B through the hole-shaft engagement, further avoiding the risk of assembly errors.

[0067] Further, please refer to Figure 8 As shown, in some embodiments, the heat-conducting component 100 includes at least three second deposition elements 120B. At least one second deposition element 120B is detachably connected to the rear end of the first deposition element 120A along a first direction, and at least two second deposition elements 120B are arranged sequentially and detachably connected to the front end of the first deposition element 120A along the first direction. The two second deposition elements 120B located at the front and rear ends of the first deposition element 120A can be interchanged. With this solution, after swapping the position of one second deposition element 120B originally located at the rear end of the first direction with the second deposition element 120B located at the first position 110, the operator can again swap the position of the other second deposition element 120B originally located at the rear end of the first direction with the second deposition element 120B located at the first position 110, further improving the service life of the heat-conducting component 100.

[0068] On the other hand, since the deposition channel 121 of the first deposition element 120A is used to accommodate the substrate, in order to improve the effect of the reactive gas depositing a thin film on the substrate, those skilled in the art need to design in advance the distance between the front end of the thermal conductive component 100 and the first deposition element 120A in the first direction. The above embodiment, by providing multiple second deposition elements 120B at the rear end in the first direction, not only further improves the service life of the thermal conductive component 100, but also allows the thermal conductive component 100 to utilize the space of the first deposition element 120A in the first direction.

[0069] Without departing from the inventive concept of this utility model, those skilled in the art can also transfer the deposition piece 120 located at the first position 110 to the front side of the first position 110 by other means.

[0070] As a preferred option, please refer to Figure 6 , Figure 7 As shown, where Figure 6 This illustrates the first usage state of the thermal conductive assembly 100. Figure 7 The second usage state of the thermal conductive assembly 100 is shown. In some embodiments, the thermal conductive assembly 100 includes at least three deposits 120, one of which is defined as a first deposit 120A, one of which is defined as a second deposit 120B, and one of which is defined as a third deposit 120C.

[0071] The thermally conductive component 100 has a first operating state and a second operating state. Please refer to... Figure 6 As shown, in the first usage state, the first deposition element 120A, the second deposition element 120B, and the third deposition element 120C are sequentially and detachably connected along the first direction, with the first deposition element 120A located at the first position 110. When the reactive gas is blown into the heat-conducting component 100 in the first usage state from the rear end in the first direction, the by-reaction products of the deposition channel 121 of the first deposition element 120A will first accumulate to a degree that affects the formation of a thin film on the substrate. At this time, the operator can switch the heat-conducting component 100 from the first usage state to the second usage state by disassembling and reassembling the heat-conducting component 100.

[0072] For the second usage state, please refer to Figure 7 As shown, along the first direction, the second deposition element 120B, the third deposition element 120C, and the first deposition element 120A are sequentially and detachably connected, with the second deposition element 120B located at the first position 110. Since the accumulation of the second deposition element 120B has not yet reached the level that affects the formation of a thin film on the substrate, the reactive gas can continue to enter the deposition channel 121, allowing the substrate to continue forming a thin film, thereby extending the service life of the thermal conductive assembly 100.

[0073] Alternatively, the operator can first place the thermal conductive component 100 in the second usage state, and when the by-reaction products in the deposition channel 121 of the second deposition element 120B accumulate to a level that affects the formation of a thin film on the substrate, the thermal conductive component 100 can be switched from the second usage state to the first usage state by disassembling and reassembling it. The above solution can also extend the service life of the thermal conductive component 100, which will not be elaborated further here.

[0074] Further, please refer to Figure 3 , Figure 5 , Figure 6 , Figure 7 As shown, in some embodiments, the reaction chamber structure 10 further includes a tray 200 for supporting the substrate, and the tray 200 is detachably connected to the deposition unit 120. Since the tray 200 for supporting the substrate is detachably connected to the deposition unit 120, operators can move the substrate by picking up the tray 200 before and after the deposition process, reducing direct contact between external devices and the substrate, which is beneficial to improving product quality.

[0075] Based on the above solutions, please refer to Figure 6 , Figure 7 As shown, in some embodiments, in a first usage state, the tray 200 is detachably connected to the second deposition element 120B. In a second usage state, the tray 200 is detachably connected to the third deposition element 120C.

[0076] Through the above scheme, in the first usage state, the distance between the tray 200 and the rear end of the thermal conductive component 100 in the first direction is greater than the length of the first deposited element 120A in the first direction. In the second usage state, the distance between the tray 200 and the rear end of the thermal conductive component 100 in the first direction is greater than the length of the second deposited element 120B in the first direction. Therefore, both the tray 200 in the first usage state and the tray 200 in the second usage state can maintain a large distance from the rear end of the thermal conductive component 100 in the first direction, which can prevent the position of the tray 200 from being too close to the position of the thermal conductive component 100 at the rear end in the first direction, thereby avoiding the premature impact of side reaction products on the thin film formation process of the substrate.

[0077] As a preferred embodiment, in both the first and second use states, the distance between the tray 200 and the rear end of the heat-conducting assembly 100 in the first direction is the same.

[0078] Without departing from the inventive concept of this utility model, those skilled in the art can make further improvements to the structure of the deposition component 120.

[0079] As a preferred option, please refer to Figure 5 As shown, where Figure 5 The deposition channel 121 is defined by the first surface of the upper plate 122, the first surface of the lower plate 123, the first surface of the first side plate 124, and the first surface of the second side plate 125. The first surface of the upper plate 122 faces down, the second surface of the upper plate 122 faces up, the first surface of the lower plate 123 faces up, the second surface of the lower plate 123 faces down, the first surface of the first side plate 124 faces right, the second surface of the first side plate 124 faces left, the first surface of the second side plate 125 faces left, and the second surface of the second side plate 125 faces right. In some embodiments, the deposition member 120 includes an upper plate 122, a lower plate 123, a first side plate 124, and a second side plate 125. The upper plate 122, the lower plate 123, the first side plate 124, and the second side plate 125 each have a first surface and a second surface facing each other in their respective thickness directions. The opposite sides of the upper plate 122 are detachably connected to one end of the first side plate 124 and one end of the second side plate 125, respectively. The opposite sides of the lower plate 123 are detachably connected to one end of the first side plate 124 and one end of the second side plate 125, respectively, so that the deposition member 120 can switch between a first installation state and a second installation state.

[0080] Please refer to Figure 5 As shown, in the first installation state, the first surfaces of the upper plate 122 and the lower plate 123 face each other, and the first surfaces of the first side plate 124 and the second side plate 125 face each other. The first surfaces of the upper plate 122, the lower plate 123, the first side plate 124, and the second side plate 125 together define the deposition channel 121. After the heat-conducting assembly 100 introduces the reaction gas, by-reaction products gradually accumulate on the first surfaces of the upper plate 122, the lower plate 123, the first side plate 124, and the second side plate 125. When the by-reaction products on the first surfaces accumulate to a level that affects the formation of a thin film on the substrate, the operator can switch the deposition component 120 from the first installation state to the second installation state by disassembling and reassembling the deposition component 120.

[0081] In the second installation state, the second surface of the upper plate 122 and the second surface of the lower plate 123 face each other, and the second surfaces of the first side plate 124 and the second side plate 125 face each other. The second surfaces of the upper plate 122, the lower plate 123, the first side plate 124, and the second side plate 125 together define the deposition channel 121. Since the second surface faces away from the first surface, the deposition channel 121 defined by the second surfaces of the upper plate 122, the lower plate 123, the first side plate 124, and the second side plate 125 has not yet generated any byproducts. The reaction gas can continue to enter the deposition channel 121 formed by the same deposition element 120, allowing the substrate to continue to form a thin film, extending the service life of the deposition element 120, and thus extending the service life of the heat-conducting assembly 100.

[0082] Alternatively, the operator can first place the deposited component 120 in the second mounting state, and when the by-reaction products on the second surface accumulate to a level that affects the formation of a thin film on the substrate, switch the thermally conductive component 100 from the second mounting state to the first mounting state by disassembling and reassembling it. This method can also extend the service life of the thermally conductive component 100, and will not be elaborated further here.

[0083] Furthermore, in some embodiments, the inner wall of the deposition channel 121 is provided with a silicon carbide coating or a tantalum carbide coating. By providing a silicon carbide coating or a tantalum carbide coating on the inner wall of the deposition channel 121, the thermal stability of the inner wall of the deposition channel 121 can be further improved, thereby enhancing the stability during the thin film formation process of the substrate.

[0084] Furthermore, in some embodiments, the deposition element 120 is made of graphite. Graphite has good thermal stability and thermal conductivity, which is beneficial for rapidly increasing the temperature within the deposition channel 121 and improving the efficiency of thin film formation on the substrate.

[0085] Please refer to Figures 1 to 8As shown, this utility model also proposes a silicon carbide epitaxial device. The silicon carbide epitaxial device of this utility model includes an air inlet 20, a heating assembly 30, and a reaction chamber structure 10 as described in any of the above embodiments.

[0086] Please refer to Figure 1 As shown, the air inlet 20 of this invention has an air inlet channel 21 for introducing reactive gas. The air inlet 20 is disposed at the rear side of the first position 110 along a first direction, and the air inlet channel 21 is connected to the deposition channel 121 of the deposition component 120 located at the first position 110. During the deposition of a thin film on the substrate, the reactive gas can enter the deposition channel 121 from the air inlet channel 21 located at the rear end of the first direction and react with the substrate in the deposition channel 121 to form a thin film on the substrate.

[0087] Please refer to Figure 2 As shown, the heating component 30 of this invention is used to heat the heat-conducting component 100. Without departing from the inventive concept of this invention, those skilled in the art can customize the form of the heating component 30. In some embodiments, please refer to... Figure 1 , Figure 2 As shown, the heating component 30 includes a heating element 31 and a heat insulation element 32. The heating element 31 can heat the heat-conducting component 100 by electromagnetic induction, and the heat insulation element 32 is used to isolate the heat-conducting component 100 from heat exchange with the outside world, so that the heat-conducting component 100 can maintain a high temperature after being heated, thereby improving the stability of the substrate thin film formation process.

[0088] Through the above scheme, the by-reaction products of the deposition channel 121 of the deposition element 120 located at the first position 110 will accumulate to a level that affects the formation of the substrate film first. At this time, the operator can disassemble the deposition element 120 located at the first position 110 and move it to the front of the first position 110, so that the deposition element 120 originally located at the front in the first direction is placed at the rear in the first direction. The reaction gas can continue to enter the deposition channel 121, allowing the substrate to continue to form a film. The above scheme can utilize the deposition element 120 originally located at the front in the first direction to allow the substrate to continue to form a film, effectively extending the service life of the thermal conductive component 100.

[0089] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof can be combined with each other unless otherwise specified.

Claims

1. A reaction chamber structure for generating silicon carbide on the surface of a substrate, characterized in that, include: A thermally conductive assembly includes a plurality of deposition elements having through deposition channels for accommodating a substrate and for allowing reactive gases introduced into the deposition channels to flow in a first direction. The plurality of said deposition elements are arranged sequentially along the first direction, and the deposition channels of adjacent deposition elements are connected; The heat-conducting assembly has a first position at its rear end along the first direction, at least one of the deposited elements is disposed at the first position, and adjacent deposited elements are detachably connected to allow the deposited element located at the first position to be transferred to the front side of the first position.

2. The reaction chamber structure according to claim 1, characterized in that, The thermally conductive assembly includes at least three deposition elements, one of which is defined as a first deposition element, and two of which are defined as second deposition elements, wherein the deposition channel of the first deposition element is used to accommodate a substrate; The first deposition element is detachably connected to two second deposition elements on opposite sides in the first direction, so that the two second deposition elements can be interchanged.

3. The reaction chamber structure according to claim 2, characterized in that, The first deposition element includes two first connecting portions, which are located at opposite ends of the first deposition element along the first direction; each second deposition element includes a second connecting portion, which is located on the side of the second deposition element closer to the first deposition element and is detachably connected to the first connecting portion.

4. The reaction chamber structure according to claim 3, characterized in that, The first connecting part has a matching hole, and the second connecting part includes a matching shaft; when the first connecting part is connected to the second connecting part, the matching shaft engages with the matching hole. Alternatively, the first connecting part has a matching shaft, and the second connecting part includes a matching hole, wherein when the first connecting part is connected to the second connecting part, the matching shaft engages with the matching hole.

5. The reaction chamber structure according to claim 2, characterized in that, The heat-conducting component includes at least three second deposition elements, at least one of which is detachably connected to the rear end of the first deposition element along the first direction, and at least two of which are arranged sequentially and detachably connected to the front end of the first deposition element along the first direction. The two second deposition elements located at the front and rear ends of the first deposition element are interchangeable.

6. The reaction chamber structure according to claim 1, characterized in that, The heat-conducting assembly includes at least three deposition elements, one of which is defined as a first deposition element, one of which is a second deposition element, and one of which is a third deposition element; the heat-conducting assembly has a first use state and a second use state, in the first use state, the first deposition element, the second deposition element, and the third deposition element are sequentially and detachably connected along the first direction; In the second usage state, along the first direction, the second deposition element, the third deposition element, and the first deposition element are sequentially and detachably connected.

7. The reaction chamber structure according to claim 6, characterized in that, The reaction chamber structure also includes a tray for supporting the substrate; in the first use state, the tray is detachably connected to the second deposition element; in the second use state, the tray is detachably connected to the third deposition element.

8. The reaction chamber structure according to claim 1, characterized in that, The deposition component includes an upper plate, a lower plate, a first side plate, and a second side plate. The upper plate, the lower plate, the first side plate, and the second side plate each have a first surface and a second surface facing away from each other in their respective thickness directions. The opposite sides of the upper plate are detachably connected to one end of the first side plate and one end of the second side plate, respectively. The opposite sides of the lower plate are detachably connected to one end of the first side plate and one end of the second side plate, respectively, so that the deposition component can switch between a first installation state and a second installation state. In the first installation state, the first surface of the upper plate and the first surface of the lower plate are arranged facing each other, the first surface of the first side plate and the first surface of the second side plate are arranged facing each other, and the first surface of the upper plate, the first surface of the lower plate, the first surface of the first side plate and the first surface of the second side plate together define the deposition channel. In the second installation state, the second surface of the upper plate and the second surface of the lower plate are arranged facing each other, the second surface of the first side plate and the second surface of the second side plate are arranged facing each other, and the second surface of the upper plate, the second surface of the lower plate, the second surface of the first side plate and the second surface of the second side plate together define the deposition channel.

9. The reaction chamber structure according to claim 1, characterized in that, The inner wall of the deposition channel is provided with a silicon carbide coating or a tantalum carbide coating, and / or the deposition element is made of graphite material.

10. A silicon carbide epitaxial device, characterized in that, include: The reaction chamber structure as described in any one of claims 1 to 9; An air intake component has an air intake channel for introducing the reaction gas; the air intake component is disposed on the rear side of the first position along the first direction, and the air intake channel is connected to the deposition channel of the deposition component located at the first position; A heating component for heating the heat-conducting component.

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