Radio frequency circuit, mainboard and terminal equipment

Abstract

The utility model provides a radio frequency circuit, a mainboard and terminal equipment, and relates to the technical field of mobile communication. The radio frequency circuit comprises a radio frequency transmitting unit, an amplifying unit, a switch unit and an antenna, wherein the radio frequency transmitting unit comprises a first port, a second port and a plurality of third ports, the first port is used for outputting GSM low-frequency signals, the second port is used for outputting GSM intermediate-frequency signals, and the plurality of third ports are used for outputting 4G frequency band signals and / or 5G frequency band signals; the first port is connected with a first low-frequency port of the amplification unit, the second port is connected with an intermediate-frequency port of the amplification unit, and the third port is connected with a port for correspondingly transmitting a set frequency band signal in the amplification unit; the output port of the amplification unit is connected with one end of the switch unit, and the other end of the switch unit is connected with an antenna. According to the application, by multiplexing the idle intermediate-frequency and low-frequency ports of the amplification unit, the GSM signal and the set frequency band signal are amplified by sharing one amplification unit, and the occupied area of a mainboard is reduced.

Description

Technical Field

[0001] This application relates to the field of mobile communication technology, and in particular to a radio frequency circuit, a motherboard, and a terminal device. Background Technology

[0002] In the field of mobile communication technology, radio frequency circuit design directly affects signal transmission quality and device integration.

[0003] In related technologies, the radio frequency circuit includes: a radio frequency transmitting unit, a second-generation mobile communication (2G) power amplifier (PA), a fifth-generation mobile communication (5G) PA, a transmitter module (TXM), and an antenna. The ports in the radio frequency transmitting unit used to output 4G and 5G band signals are connected to the input ports of the 5G PA. The ports in the radio frequency transmitting unit used to output Global System for Mobile Communications (GSM) signals are connected to the input ports of the 2G PA. The output ports of the 5G PA and the 2G PA are respectively connected to the TXT. After processing by the TXM, the signal is radiated through the antenna.

[0004] However, this radio frequency circuit results in a larger motherboard footprint. Utility Model Content

[0005] The radio frequency circuit, motherboard, and terminal device provided in this application are intended to solve the problem that radio frequency circuits cause the motherboard to occupy a large area in related technologies.

[0006] In a first aspect, this application provides a radio frequency circuit, comprising: a radio frequency transmitting unit, an amplifying unit, a switching unit, and an antenna; wherein:

[0007] The radio frequency transmitting unit includes a first port, a second port, and multiple third ports. The first port is used to output GSM low-frequency signals, the second port is used to output GSM intermediate-frequency signals, and the multiple third ports are used to output signals in a set frequency band, including 4G and / or 5G signals. The first port is connected to the first low-frequency port of the amplification unit, the second port is connected to the intermediate-frequency port of the amplification unit, and the third ports are connected to the port in the amplification unit that corresponds to the transmission of the set frequency band signal. The output port of the amplification unit is used to connect to one end of the switching unit, and the other end of the switching unit is connected to the antenna.

[0008] The amplification unit is used to amplify GSM low-frequency signals, GSM intermediate-frequency signals, and signals in a set frequency band to obtain the corresponding amplified signals.

[0009] The switching unit is used to turn on the signal channel between the amplifier unit and the antenna, so as to output an amplified signal to the antenna.

[0010] In one possible implementation, the switching unit includes N fixed terminals and 1 moving terminal. The fixed terminals are used to connect to the output port of the amplification unit, and the moving terminal is used to connect to the antenna. M is the number of frequency bands included in the set frequency band signal, and N and M are both positive integers.

[0011] In one possible implementation, the switching unit is a single-pole multi-throw switch.

[0012] In one possible implementation, the amplification unit is a 5G power amplifier or a 4G power amplifier.

[0013] In one possible implementation, the amplification unit employs gallium arsenide (GaAs) technology.

[0014] In one possible implementation, the amplification unit includes at least three gain levels, which include a low-level gain L, a medium-level gain M, and a high-level gain H.

[0015] In one possible implementation, the radio frequency circuit further includes a single-pole double-throw switch, wherein the port for outputting the intermediate frequency signal and the second port of the plurality of third ports are respectively connected to the two fixed terminals of the single-pole double-throw switch, and the moving terminal of the single-pole double-throw switch is connected to the intermediate frequency port of the amplifier unit.

[0016] In one possible implementation, the GSM low-frequency signal includes the GSM 850MHz band signal and the GSM 900MHz band signal, and the GSM intermediate frequency signal includes the GSM 1800MHz band signal and the GSM 1900MHz band signal.

[0017] Secondly, this application provides a motherboard including the radio frequency circuitry as described in the first aspect.

[0018] Thirdly, this application provides a terminal device, which includes the radio frequency circuit as described in the first aspect, or the terminal device includes the motherboard as described in the second aspect.

[0019] The radio frequency circuit, motherboard, and terminal device provided in this application include a radio frequency transmitting unit, an amplification unit, a switching unit, and an antenna. The radio frequency transmitting unit includes a first port, a second port, and multiple third ports. The first port is used to output a GSM low-frequency signal, the second port is used to output a GSM intermediate frequency signal, and the multiple third ports are used to output a set frequency band signal, which includes 4G and / or 5G frequency band signals. The first port is connected to the first low-frequency port of the amplification unit, the second port is connected to the intermediate frequency port of the amplification unit, and the third port is connected to the port in the amplification unit corresponding to the port transmitting the set frequency band signal. The output port of the amplification unit is connected to one end of the switching unit, and the other end of the switching unit is connected to the antenna. The amplification unit amplifies the GSM low-frequency signal, the GSM intermediate frequency signal, and the set frequency band signal to obtain the corresponding amplified signal. The switching unit is used to connect the signal channel between the amplification unit and the antenna to output the amplified signal to the antenna. This application achieves the amplification of GSM signals and set frequency band signals by reusing the idle intermediate frequency and idle low frequency ports of the amplifier unit, thereby replacing the 2G PA. Compared with the radio frequency circuit in related technologies, it reduces one 2G PA, has high integration, low power consumption, and saves hardware costs. In addition, it effectively reduces the space occupied by components on the motherboard and reduces the area occupied by the motherboard, thereby reducing the size and power consumption of the terminal device. Attached Figure Description

[0020] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0021] Figure 1 A simplified diagram of the radio frequency circuit corresponding to the 5G solution in related technologies. Figure 1 ;

[0022] Figure 2 A simplified diagram of the radio frequency circuit corresponding to the 5G solution in related technologies. Figure 2 ;

[0023] Figure 3 This is a schematic diagram of the internal structure of the TXT port in related technologies;

[0024] Figure 4 A schematic diagram of the radio frequency circuit provided in the embodiments of this application. Figure 1 ;

[0025] Figure 5 A schematic diagram of the radio frequency circuit provided in the embodiments of this application. Figure 2 .

[0026] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0027] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0028] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "fixation," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the connection within two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0029] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0030] In the above description, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0031] In order to enable those skilled in the art to better understand the technical solutions provided in the embodiments of this application, the solutions of related technologies will be introduced before introducing the technical solutions provided in the embodiments of this application.

[0032] Figure 1 A simplified diagram of the radio frequency circuit corresponding to the 5G solution in related technologies. Figure 1 .like Figure 1 As shown, the radio frequency circuit includes a radio frequency transmitting unit 11, a 2G power amplifier 12, a 5G power amplifier 13, a transmitter module 14, and an antenna 15. Specifically, the transmission path for the GSM signal is as follows: the port in the radio frequency transmitting unit 11 used to output the GSM intermediate frequency signal (TX0_MB2 in the figure) is connected to one input terminal of the 2G power amplifier 12, and the port used to output the GSM low-frequency signal (TX0_LB1 in the figure) is connected to the other input terminal of the 2G power amplifier 12. After the GSM intermediate frequency signal and the GSM low-frequency signal are amplified by the 2G power amplifier 12, the amplified signals (TX_GSM_MB and TX_GSM_LB in the figure) are output from the output port of the power amplifier 12 and enter the input ports (MB_IN and LB_IN in the figure) of the transmitter module 14. The specific transmission path for 5G band signals is as follows: The ports (including low-frequency, intermediate-frequency, and high-frequency ports) in the RF transmitting unit 11 used to output 5G and 4G band signals (LB, MB, HB in the diagram) are all connected to the input ports of the 5G power amplifier 13. After amplification by the 5G power amplifier 13, the amplified signal (TX in the diagram) is output from the output port of the 5G power amplifier 13 (not all output ports are shown in the diagram) and enters the input port of the transmitter module 14 (not all input ports are shown in the diagram). The transmitter module 14 integrates a single-pole multi-throw switch, which selects one of the amplified signals to output to the antenna 15 to complete signal radiation. In other words, Figure 1 The solution includes two power amplifiers (PAs) for amplifying radio frequency signals. It has low integration and uses a large TXM area of ​​about 33.6 mm². With batteries getting bigger and batteries getting smaller, this space is very precious. It increases the space occupied by components on the motherboard, resulting in a larger motherboard area. Multiple PAs also increase power consumption and increase hardware costs.

[0033] Figure 2 A simplified diagram of the radio frequency circuit corresponding to the 5G solution in related technologies. Figure 2 .like Figure 2 As shown, the radio frequency circuit includes an radio frequency transmitting unit 11, a 5G power amplifier 13, a transmitter module 14, and an antenna 15. The transmission path for 5G band signals is related to... Figure 1Similarly, this will not be repeated here. Specifically, the transmission path for the GSM signal is as follows: the port in the RF transmitting unit 11 used to output the GSM intermediate frequency signal (TX0_MB2 in the figure) is connected to the input port of the transmitter module 14 (MB_IN in the figure), and the port used to output the GSM low frequency signal (TX0_LB1 in the figure) is connected to the input port of the transmitter module 14 (LB_IN in the figure), as shown below. Figure 3 As shown in the schematic diagram of the internal structure of the TXT port in the related technology, it can be seen that the transmitter module 14 is essentially a combination of a switch and a 2GPA, that is to say, Figure 2 The solution still essentially includes two power amplifiers (PAs). Therefore, it still increases the space occupied by components on the motherboard, resulting in a larger motherboard footprint. Multiple PAs also increase power consumption and hardware costs.

[0034] To address the aforementioned technical issues, this application provides a radio frequency circuit solution that reuses the idle intermediate frequency and idle low frequency ports of an amplifier unit. This amplifier unit can amplify GSM low frequency signals, GSM intermediate frequency signals, as well as 4G band signals and / or 5G band signals. By reusing the amplifier, the number of power amplifiers (PAs) in the radio frequency circuit is reduced, thereby reducing power consumption, saving hardware costs, reducing the space occupied by components on the motherboard, reducing the area occupied by the motherboard, and thus reducing the size and power consumption of the terminal device.

[0035] It should be noted that the radio frequency circuits, motherboards and terminal equipment provided in this application are applicable to 4G and 5G communication architectures.

[0036] The technical solution of this application and how the technical solution of this application solves the above-mentioned technical problems are described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0037] Figure 4 A schematic diagram of the radio frequency circuit provided in the embodiments of this application. Figure 1 ,like Figure 4 As shown, the radio frequency circuit provided in this application embodiment includes: a radio frequency transmitting unit 11, an amplifying unit 16, a switching unit 17, and an antenna 15; wherein:

[0038] The radio frequency transmitting unit 11 includes a first port, a second port, and multiple third ports. The first port is used to output a GSM low-frequency signal, the second port is used to output a GSM intermediate frequency signal, and the multiple third ports are used to output a set frequency band signal, which includes a 4G frequency band signal and / or a 5G frequency band signal. The first port is connected to the first low-frequency port of the amplification unit 16, the second port is connected to the intermediate frequency port of the amplification unit 16, and the third ports are connected to the port in the amplification unit 16 that corresponds to the port transmitting the set frequency band signal. The output port of the amplification unit 16 is used to connect to one end of the switching unit 17, and the other end of the switching unit 17 is connected to the antenna 15.

[0039] Amplification unit 16 is used to amplify GSM low-frequency signals, GSM intermediate-frequency signals and signals in a set frequency band to obtain corresponding amplified signals;

[0040] The switching unit 17 is used to turn on the signal channel between the amplification unit 16 and the antenna 15 so as to output an amplified signal to the antenna 15.

[0041] For example, the first port corresponds to TX_GSMLB in the figure. The RF transmitting unit 11 outputs a GSM low-frequency signal (GSM_LB) through the first port, and this GSM low-frequency signal enters the first low-frequency port LB_IN1 of the amplification unit 16. The second port corresponds to TX_GSMMB in the figure. The RF transmitting unit 11 outputs a GSM intermediate frequency signal (GSM_MB) through the second port, and this GSM intermediate frequency signal enters the first intermediate frequency port MB_IN1 of the amplification unit 16. For example, in some embodiments, the GSM low-frequency signal includes GSM 850MHz band signals and GSM 900MHz band signals, and the GSM intermediate frequency signal includes GSM 1800MHz band signals and GSM 1900MHz band signals.

[0042] Multiple third ports correspond to ports LB, MB, and HB in the diagram. The RF transmitting unit 11 outputs a low-frequency setting signal (such as a low-frequency signal between 600MHz and 900MHz corresponding to 5G) through port LB. This low-frequency setting signal LB enters the second low-frequency port LB_IN2 of the amplification unit 16. The RF transmitting unit 11 outputs an intermediate frequency setting signal (such as an intermediate frequency signal between 1GHz and 6GHz corresponding to 5G) through port MB. This intermediate frequency setting signal MB enters the second intermediate frequency port MB_IN2 of the amplification unit 16. The RF transmitting unit 11 outputs a high-frequency setting signal (such as a high-frequency signal between 24GHz and 40GHz and above corresponding to 5G) through port HB. This high-frequency setting signal HB enters the high-frequency port HB_IN of the amplification unit 16.

[0043] The GSM low-frequency signal, GSM intermediate-frequency signal, set high-frequency signal, set intermediate-frequency signal, and set low-frequency signal are amplified by the amplification unit 16, and then selected and controlled by the switching unit 17. The switching unit 17 is used to select one signal channel between the amplification unit and the antenna 15. Figure 4 (Only GSM low-frequency signal and GSM intermediate-frequency signal are shown in the figure), so that a certain amplified signal corresponding to the GSM low-frequency signal, GSM intermediate-frequency signal and the set frequency band signal reaches the antenna 15, and the antenna 15 finally processes the amplified signal into an electromagnetic wave and transmits it.

[0044] It is understood that the amplification unit 16 is a power amplifier capable of amplifying GSM signals, 4G band signals, and / or 5G band signals. The ports included in this power amplifier typically provide amplification for 4G band signals and / or 5G band signals, and also have idle intermediate frequency (IF) ports and low-frequency (LFM) ports, which are used to access GSM signals.

[0045] The switching unit 17 can be, for example, a standalone single-pole double-throw switch, a TXM module with integrated switches, or a combination of multiple control switches, as long as it can enable the signal channel between the conducting amplification unit 16 and the antenna 15. This application embodiment does not impose specific limitations on this.

[0046] It should be noted that, Figure 4 As an example only, Figure 4 The illustrations are based solely on signal frequency band classification (high frequency, low frequency, and intermediate frequency). In actual project applications, the number of ports on the RF transmitting unit is not limited to this. Figure 4 As shown, for example, for 4G and 5G signals, at least one port may be provided for outputting high-frequency signals of different frequency bands, at least one port may be provided for outputting intermediate-frequency signals of different frequency bands, at least one port may be provided for outputting low-frequency signals of different frequency bands, and so on. Similarly, for GSM signals, multiple first ports may be provided for outputting GSM low-frequency signals of different frequency bands, and multiple second ports may be provided for outputting GSM intermediate-frequency signals of different frequency bands. In the embodiments of this application, the number of ports of the radio frequency transmitting unit is not limited, and can be designed according to the actual project or specific product.

[0047] In this embodiment, by reusing the idle intermediate frequency (IF) port and idle low frequency (LFM) port of the amplification unit, access for GSM signals is provided, enabling the sharing of a single amplification unit for amplifying GSM signals and signals in a set frequency band, thereby replacing the 2G PA. Compared with the radio frequency circuits in related technologies, on the one hand, it reduces one 2G PA, resulting in higher integration, lower power consumption, and reduced hardware costs, while also improving the port utilization rate of the amplification unit; on the other hand, it effectively reduces the space occupied by components on the motherboard and reduces the motherboard area, thereby reducing the size and power consumption of the terminal device.

[0048] In some embodiments, the switching unit includes N fixed terminals and 1 moving terminal. The fixed terminals are used to connect to the output port of the amplification unit, and the moving terminal is used to connect to the antenna. M is the number of frequency bands included in the set frequency band signal, and N and M are both positive integers.

[0049] For example, the switching unit is a TXM module integrating a switch. This TXM provides N fixed terminals and 1 moving terminal. The moving terminal connects to the antenna and is used to select the signal path between the amplification unit and the antenna. The N fixed terminals are respectively connected to the N output ports of the amplification unit. Two of the N fixed terminals are connected to the output ports of the amplification unit used to output GSM low-frequency signals and GSM intermediate-frequency signals, respectively. The remaining N-2 fixed terminals are connected to the output ports of the amplification unit used to output signals in a set frequency band. For example, if the set frequency band signal includes 4 frequency bands (2 low-frequency bands, 1 intermediate-frequency band, and 1 high-frequency band), i.e., M=4, then N-2=4, meaning the switching unit contains 6 fixed terminals.

[0050] In some embodiments, the switching unit may also be a single-pole multi-throw switch.

[0051] A single-pole multiple-throw (SPMT) switch has one output and multiple inputs, allowing the output signal to be switched between multiple inputs. In this embodiment, the switching unit is considered to consist of only a single SPMT switch, whose multiple inputs (fixed terminals) are used to connect to the output port of the amplification unit, and the output (moving terminal) is used to connect to the antenna.

[0052] In this embodiment, a single-pole multi-throw (SPMD) switch is used as the switching unit. Compared to the TXM module, the SPMD switch occupies less motherboard area, increasing the space available for component placement by 27mm², which is crucial given the increasingly challenging space constraints. Furthermore, the hardware cost is lower. Therefore, by simplifying the TXM to a SPMD switch, the space occupied by components on the motherboard is further reduced, the motherboard area is decreased, and hardware costs are saved.

[0053] In some embodiments, the amplification unit is a 5G power amplifier or a 4G power amplifier.

[0054] An amplification unit amplifies radio frequency signals (GSM signals, 4G band signals, and 5G band signals) to a sufficient power level for efficient transmission through the antenna. Compared to 4G power amplifiers, 5G power amplifiers support higher frequencies, offer higher amplification efficiency and linearity, support a wider range of frequency bands, and have more ports; however, they are more complex to design and more expensive. 5G power amplifiers are suitable for 5G base stations, user equipment (such as smartphones), and other 5G communication devices, while 4G power amplifiers are primarily used in 4G LTE base stations and user equipment. Therefore, in practical project applications, the selection and design can be based on specific needs, and this application does not impose specific restrictions. For example, when the port requirement is low, a 4G power amplifier can be chosen as the amplification unit; when the port requirement is high, considering the limited ports of 4G power amplifiers, a 5G power amplifier can be chosen.

[0055] In some embodiments, the amplification unit employs gallium arsenide (GaAs) technology.

[0056] Gallium arsenide (GaAs) is a semiconductor material commonly used in radio frequency and microwave bands, especially in the manufacture of power amplifiers (PAs). The amplification unit provided in this embodiment employs GaAs technology, which can provide high output power while maintaining a small device size. Furthermore, compared to 2G PAs in related technologies that use CMOS technology, which has lower linearity and weaker signal processing capabilities, leading to GSM signal distortion, the amplification unit in this embodiment uses gallium arsenide technology, which significantly improves linearity and reduces GSM signal distortion compared to CMOS technology, thereby improving communication quality.

[0057] In some embodiments, the amplification unit includes at least three levels of gain, including a low-level gain L, a medium-level gain M, and a high-level gain H.

[0058] Each gain stage is responsible for amplifying the signal to different power levels.

[0059] For example, when a 5G PA is set to 3 gain levels, the 3 gain levels are low gain (L), medium gain (M), and high gain (H); when a 5G PA is set to 4 gain levels, the 4 gain levels are ultra-low gain (UL), low gain (L), medium gain (M), and high gain (H). In GSM mode, the power control level (PCL) range typically ranges from PCL5 (high power) to PCL19 (low power), with each level corresponding to a specific transmit power. Different PCL levels can be achieved by adjusting the PA's gain level. For example, for a lower PCL level, the PA can reduce the gain to save power, while for a higher PCL level, the PA can increase the gain to improve signal strength.

[0060] However, in related technologies, 2G PAs typically only have two gain levels (low-level gain L and high-level gain H). In GSM mode (i.e., in the GSM signal transmission path), this results in excessively high gain when GSM operates at low power (5dBm~10dBm, i.e., PCL19), leading to increased power consumption and heat generation, thus affecting the overall battery life. In this application embodiment, the amplification unit (4G PA or 5G PA) has at least three gain levels. The PA can more finely control the output power of the RF signal by selecting appropriate gain levels, achieving a gain range from PCL5 (high power) to PCL19 (low power) with lower power consumption, thus achieving finer-grained, more flexible gain control and higher efficiency. Based on this multi-level gain high-performance PA architecture, GSM power consumption is reduced, heat generation during calls in terminal devices (such as mobile phones and tablets) is reduced, and battery life is improved. Furthermore, 4G PAs and 5G PAs need to meet the high-efficiency requirements of 4G and 5G, and their designs often prioritize energy efficiency, resulting in higher energy efficiency during weak signal transmission.

[0061] Next, eight sets of experimental data are used to verify the performance of this high-performance PA architecture with multi-level gain in GSM output power. The experiment uses the PA product FX5627S as the test object. Table 1 shows the output power data of the transmission path of the GSM low-frequency signal corresponding to the 5G PA, and Table 2 shows the output power data of the transmission path of the GSM intermediate-frequency signal corresponding to the 5G PA. Tables 1 and 2 are shown below:

[0062] Table 1

[0063]

[0064] Table 2

[0065]

[0066] Table 1 shows that the maximum output power of different frequency bands in GSM low-frequency operation is 34.63 dBm, and the minimum power is 34.35 dBm, which meets the power output requirements. Typically, the power output requirement for GSM low-frequency operation is greater than 34 dBm. Table 2 shows that the maximum output power of different frequency bands in GSM mid-frequency operation is 34.88 dBm, and the minimum power is 34.55 dBm, which also meets the power output requirements. Typically, the power output requirement for GSM mid-frequency operation is greater than 31 dBm. It should be noted that power output requirements and power deviations are subject to the actual project and product specifications.

[0067] Considering that in practical applications, the number of intermediate frequency ports of the amplification unit (4G PA or 5G PA) is limited and may be in short supply, in order to ensure that the intermediate frequency signal can be transmitted normally, in some embodiments, the radio frequency circuit also includes a single-pole double-throw switch. Among the multiple third ports, the port used to output the intermediate frequency signal and the second port are respectively connected to the two fixed terminals of the single-pole double-throw switch, and the moving terminal of the single-pole double-throw switch is connected to the intermediate frequency port of the amplification unit.

[0068] For example, Figure 5 A schematic diagram of the radio frequency circuit provided in the embodiments of this application. Figure 2 ,like Figure 5 As shown, the second port TX_GSMMB of the RF transmitting unit 11 and the port MB among the multiple third ports used for outputting intermediate frequency (IF) signals are respectively connected to the two fixed terminals of a single-pole double-throw (SPD) switch 18. The moving terminal of the SPD switch 18 is connected to the IF port MB_IN of the amplifier unit 16. The SPD switch 18 is used to open the signal channel corresponding to the GSM IF signal (GSM_MB) so that the GSM IF signal enters the IF port MB_IN of the amplifier unit 16, or to open the signal channel corresponding to the set IF signal (MB) so that the set IF signal enters the IF port MB_IN of the amplifier unit 16.

[0069] This application also provides a motherboard including the radio frequency circuit described in the above embodiments.

[0070] For example, in addition to radio frequency circuits, the motherboard also includes a central processing unit, memory units, storage, power management unit, connection interfaces, etc. These components together constitute the core functions of the motherboard, supporting the full operation of the device and the user experience.

[0071] Applying the radio frequency circuit provided in the above embodiments to the motherboard of this application embodiment effectively reduces the space occupied by the components on the motherboard and reduces the area occupied by the motherboard.

[0072] This application also provides a terminal device, which includes the radio frequency circuit described in the above embodiments, or the terminal device includes the motherboard described in the above embodiments.

[0073] For example, terminal devices can be mobile phones, tablets, smart TVs, wearable devices, computers with wireless transceiver capabilities, wireless terminals in autonomous driving, wireless terminals in smart grids, wireless terminals in transportation safety, wireless terminals in smart cities, wireless terminals in smart homes, and so on.

[0074] Applying the radio frequency circuit or motherboard provided in the above embodiments to the terminal device of this application embodiment can reduce the size and power consumption of the terminal device.

[0075] In summary, this application has at least the following advantages:

[0076] First, by reusing the idle intermediate frequency (IF) and low frequency (LFM) ports of the amplifier unit, GSM signals can be provided for amplification, allowing a single amplifier unit to amplify both GSM signals and signals in a designated frequency band, thus replacing the 2G PA (Radio Frequency Amplifier). Compared to the RF circuits in related technologies, this approach reduces the need for a 2G PA, resulting in higher integration, lower power consumption, and reduced hardware costs, while also improving the port utilization of the amplifier unit. Furthermore, it effectively reduces the space occupied by components on the motherboard, thereby reducing the motherboard's footprint and consequently lowering the size and power consumption of the terminal device.

[0077] Second, using a single-pole multi-throw (SPMW) switch as the switching unit offers several advantages over the TXM module. Firstly, the SPMW switch occupies less motherboard space, allowing for a 27mm² increase in component placement space, which is crucial given the increasingly challenging space constraints. Secondly, it results in lower hardware costs. Therefore, by simplifying the TXM module to a SPMW switch, the space occupied by components on the motherboard is further reduced, the motherboard area is minimized, and hardware costs are saved.

[0078] Third, the amplification unit adopts GaAs technology, which can provide high output power while maintaining a small device size. In addition, compared with the CMOS technology used in related technologies, which has lower linearity and weaker signal processing capabilities, resulting in easy distortion of GSM signals, the amplification unit of this application adopts gallium arsenide technology, which significantly improves linearity and reduces GSM signal distortion compared with CMOS technology, thereby improving communication quality.

[0079] IV. The amplification unit (4G PA or 5G PA) has at least three gain levels. By selecting appropriate gain levels, the PA can more finely control the output power of the RF signal, achieving a gain range from PCL5 (high power) to PCL19 (low power) with lower power consumption. This results in finer-grained, more flexible gain control and higher efficiency. Based on this multi-level gain high-performance PA architecture, GSM power consumption is reduced, heat generation during calls in terminal devices (such as mobile phones and tablets) is reduced, and battery life is improved. In addition, 4G PA and 5G PA need to meet the high-efficiency requirements of 4G and 5G, and their designs often focus more on energy efficiency, thus achieving higher energy efficiency in weak signal transmission.

[0080] Finally, it should be noted that other embodiments of this application will readily conceive of by those skilled in the art upon consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein, and is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and alterations may be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A radio frequency circuit, characterized in that, include: Radio frequency transmitting unit, amplification unit, switching unit, and antenna; wherein: The radio frequency transmitting unit includes a first port, a second port, and multiple third ports. The first port is used to output a GSM low-frequency signal, the second port is used to output a GSM intermediate frequency signal, and the multiple third ports are used to output a set frequency band signal, which includes a 4G frequency band signal and / or a 5G frequency band signal. The first port is connected to the first low-frequency port of the amplification unit, the second port is connected to the intermediate frequency port of the amplification unit, and the third ports are connected to the port in the amplification unit that corresponds to the port transmitting the set frequency band signal. The output port of the amplification unit is used to connect to one end of the switching unit, and the other end of the switching unit is connected to the antenna. The amplification unit is used to amplify the GSM low-frequency signal, the GSM intermediate-frequency signal, and the set frequency band signal to obtain the corresponding amplified signal. The switching unit is used to turn on the signal channel between the amplification unit and the antenna, so as to output an amplified signal to the antenna.

2. The radio frequency circuit according to claim 1, characterized in that, The switching unit includes N fixed terminals and 1 moving terminal. The fixed terminals are used to connect to the output port of the amplification unit, and the moving terminal is used to connect to the antenna. M is the number of frequency bands included in the set frequency band signal, and N and M are both positive integers.

3. The radio frequency circuit according to claim 2, characterized in that, The switching unit is a single-pole multi-throw switch.

4. The radio frequency circuit according to any one of claims 1 to 3, characterized in that, The amplification unit is a 5G power amplifier or a 4G power amplifier.

5. The radio frequency circuit according to any one of claims 1 to 3, characterized in that, The amplification unit is manufactured using gallium arsenide (GaAs) technology.

6. The radio frequency circuit according to any one of claims 1 to 3, characterized in that, The amplification unit includes at least three gain levels, namely, a low-level gain L, a medium-level gain M, and a high-level gain H.

7. The radio frequency circuit according to any one of claims 1 to 3, characterized in that, The radio frequency circuit also includes a single-pole double-throw switch. The port used to output the intermediate frequency signal among the plurality of third ports and the second port are respectively connected to the two fixed terminals of the single-pole double-throw switch, and the moving terminal of the single-pole double-throw switch is connected to the intermediate frequency port of the amplification unit.

8. The radio frequency circuit according to any one of claims 1 to 3, characterized in that, The GSM low-frequency signals include GSM 850MHz band signals and GSM 900MHz band signals, and the GSM intermediate frequency signals include GSM 1800MHz band signals and GSM 1900MHz band signals.

9. A motherboard, characterized in that, Includes the radio frequency circuit as described in any one of claims 1 to 8.

10. A terminal device, characterized in that, The terminal device includes the radio frequency circuit as described in any one of claims 1 to 8, or the terminal device includes the motherboard as described in claim 9.

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