A kind of single crystal silicon wafer surface polishing treatment exhaust tooling

CN224601208UActive Publication Date: 2026-08-07JIANGSU FUXU TECH MFG CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
JIANGSU FUXU TECH MFG CO LTD
Filing Date
2024-09-24
Publication Date
2026-08-07

AI Technical Summary

Technical Problem

[0003]单晶硅片的打磨需要工装进行单晶硅片的固定,但是现有工装排废效果不理想

Benefits of technology

[0015]本实用新型的有益效果:一种单晶硅片表面打磨处理用排废工装,单晶硅片可以放置在单晶硅片定位槽中,定位精度高,上料操作简便,并利用缓冲胶垫进行单晶硅片底部的贴合吸附和弹性支撑,进一步提升稳定性和表面打磨过程中的安全性,避免单晶硅片被打磨头压坏的问题,在转盘的旋转过程中,从单晶硅片表面磨掉的废料微粒先进入环形导流槽,再利用离心力通过排废槽快速排出,避免滞留在单晶硅片表面的问题,避免对单晶硅片造成二次损伤。

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN224601208U_ABST
    Figure CN224601208U_ABST
Patent Text Reader

Abstract

The utility model discloses a kind of single crystal silicon wafer surface polishing treatment is used to discharge tooling, it includes: turntable, buffer rubber mat and annular pressing plate, the positioning ring of the upward extension is concentrically arranged in the top of turntable, the buffer rubber mat is sleeved in the outside of positioning ring, the annular pressing plate is set in buffer rubber mat upper, several single crystal silicon wafer positioning grooves are arranged at interval on the annular pressing plate, single crystal silicon wafer positioning groove bottom extends to buffer rubber mat surface, annular flow channel located in the outside of single crystal silicon wafer positioning groove is arranged in the concave of annular pressing plate, annular pressing plate edge is radially arranged with the discharge groove that passes through annular flow channel and extends to single crystal silicon wafer positioning groove.The utility model discloses the single crystal silicon wafer surface polishing treatment is used to discharge tooling, and the positioning precision of single crystal silicon wafer is high, loading operation is simple, protective, and the waste material particle of grinding enters annular flow channel first, then utilizes centrifugal force and is discharged quickly by discharge groove.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This utility model relates to the field of surface treatment technology for monocrystalline silicon wafers, and in particular to a waste removal tool for surface polishing of monocrystalline silicon wafers. Background Technology

[0002] During the processing of monocrystalline silicon wafers, cutting, grinding and other processing methods can cause damage to the surface of the monocrystalline silicon wafer, resulting in a rough surface. Polishing is required to obtain a smooth and flat monocrystalline silicon wafer.

[0003] Polishing monocrystalline silicon wafers requires tooling to hold them in place, but existing tooling has unsatisfactory waste removal capabilities. During polishing, waste particles removed from the surface of the monocrystalline silicon wafer cannot be removed in time and tend to remain on the tooling surface, affecting continued polishing. If these waste particles get between the monocrystalline silicon wafer and the polishing head, they can cause secondary damage to the wafer. Improvements are needed. Utility Model Content

[0004] The purpose of this invention is to provide a waste removal tool for surface polishing of monocrystalline silicon wafers, which positions the monocrystalline silicon wafers and improves the removal effect of waste particles.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A waste removal fixture for surface polishing of monocrystalline silicon wafers includes: a turntable, a buffer pad, and an annular pressure plate. The turntable has a concentrically arranged, upwardly extending positioning ring at its top. The buffer pad is fitted over the outside of the positioning ring. The annular pressure plate is positioned above the buffer pad. Several monocrystalline silicon wafer positioning grooves are spaced apart on the annular pressure plate, with the bottom of each groove extending to the surface of the buffer pad. An annular guide groove is recessed on the annular pressure plate, located outside the monocrystalline silicon wafer positioning groove. A waste removal groove, passing through the annular guide groove and extending to the monocrystalline silicon wafer positioning groove, is radially arranged along the edge of the annular pressure plate.

[0007] The turntable and positioning ring are made of an integrated steel structure.

[0008] The positioning ring has a stepped hole in the middle that extends downward to the bottom surface of the turntable.

[0009] The annular pressure plate and the buffer pad are respectively provided with through holes corresponding to the positioning ring.

[0010] The turntable has several positioning holes spaced apart, and the bottom of the annular pressure plate has a positioning post extending downward into the positioning hole.

[0011] The annular pressure plate and the positioning column adopt an integrated plastic structure.

[0012] The buffer pad is provided with insertion holes that correspond one-to-one with the positioning posts.

[0013] The depth of the annular guide groove is less than the thickness of the annular pressure plate, and the depth of the waste discharge groove is the same as the thickness of the annular pressure plate.

[0014] The buffer pad is made of elastic silicone.

[0015] The beneficial effects of this utility model are as follows: A waste removal fixture for surface polishing of monocrystalline silicon wafers allows the monocrystalline silicon wafers to be placed in a positioning groove with high positioning accuracy and simple loading operation. Utilizing a buffer pad for adhesion, adsorption, and elastic support at the bottom of the monocrystalline silicon wafer further enhances stability and safety during the surface polishing process, preventing damage to the wafers from the polishing head. During the rotation of the turntable, waste particles removed from the surface of the monocrystalline silicon wafer first enter the annular guide groove and are then quickly discharged through the waste removal groove using centrifugal force, avoiding the problem of residue remaining on the surface of the monocrystalline silicon wafer and preventing secondary damage. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of this utility model;

[0017] Figure 2 yes Figure 1 Top view. Detailed Implementation

[0018] The following is combined with Figures 1-2 The technical solution of this utility model will be further illustrated through specific embodiments.

[0019] like Figure 1 The waste removal fixture for surface polishing of monocrystalline silicon wafers shown includes: a turntable 1, a buffer pad 8, and an annular pressure plate 2. A positioning ring 11 extending upwards is concentrically arranged on the top of the turntable 1. The turntable 1 and the positioning ring 11 are integrated steel structures with high structural strength. A stepped hole 3 extending downwards to the bottom surface of the turntable 1 is provided in the middle of the positioning ring 1, facilitating connection with a rotary drive mechanism to drive the rotation of the turntable 1 during the polishing process.

[0020] The buffer pad 8 is fitted onto the outside of the positioning ring 11, and the annular pressure plate 2 is positioned above the buffer pad 8 to press and secure it. In this embodiment, the annular pressure plate 2 and the buffer pad 8 are respectively provided with through holes corresponding to the positioning ring 11, which facilitates assembly and ensures high fitting accuracy.

[0021] Several monocrystalline silicon wafer positioning slots 5 are spaced apart on the annular pressure plate 2. Monocrystalline silicon wafers 4 can be placed in the monocrystalline silicon wafer positioning slots 5, achieving high positioning accuracy and simplifying the loading operation. Figure 2As shown, six monocrystalline silicon wafer positioning slots 5 are arranged in a ring array, allowing for simultaneous surface polishing of six monocrystalline silicon wafers 4. The turntable 1 is driven by a motor to rotate the six monocrystalline silicon wafers 4, which, in conjunction with the descent of the polishing head, enables rapid surface polishing.

[0022] In this embodiment, the bottom of the monocrystalline silicon wafer positioning groove 5 extends to the surface of the buffer pad 8, so that the bottom surface of the monocrystalline silicon wafer 4 contacts the surface of the buffer pad 8. The buffer pad 8 is made of elastic silicone, which can not only provide elastic buffering when the monocrystalline silicon wafer 4 is compressed, but also allow air to be discharged through the fit between the buffer pad 8 and the bottom surface of the monocrystalline silicon wafer 4, thereby improving the stability of the monocrystalline silicon wafer 4 in the monocrystalline silicon wafer positioning groove 5 and preventing the problem of flying out.

[0023] To improve the rotational synchronization of the turntable 1, the buffer pad 8, and the annular pressure plate 2, several positioning holes 7 are spaced apart on the turntable 1. The bottom of the annular pressure plate 3 has positioning posts 6 extending downwards into the positioning holes 7. In this embodiment, the annular pressure plate 3 and the positioning posts 6 adopt an integrated plastic structure, which is structurally stable and convenient to manufacture. The buffer pad 8 has insertion holes 12 that correspond one-to-one with the positioning posts 6 to prevent relative torsion of the buffer pad 8.

[0024] like Figure 1 As shown, an annular guide groove 9 is recessed on the annular pressure plate 2 and located outside the monocrystalline silicon wafer positioning groove 5. During the rotation of the turntable 1, the waste particles and coolant worn off from the surface of the monocrystalline silicon wafer 4 first enter the annular guide groove 9, avoiding the problem of being stuck on the surface of the monocrystalline silicon wafer 4 and avoiding secondary damage to the monocrystalline silicon wafer 4.

[0025] In this embodiment, the annular pressure plate 2 is radially provided with a waste discharge groove 10 that passes through the annular guide groove 9 and extends to the single crystal silicon wafer positioning groove 5, such as... Figure 2 As shown, using the centrifugal force of the rotating turntable 1, the waste particles and coolant in the annular guide channel 9 are quickly discharged outward through the waste discharge channel 10.

[0026] like Figure 1 As shown, the depth of the annular guide groove 9 is less than the thickness of the annular pressure plate 2, avoiding the problem of liquid accumulation in the annular guide groove 9. The depth of the waste discharge groove 10 is the same as the thickness of the annular pressure plate 2, so that waste particles and coolant in the monocrystalline silicon wafer positioning groove 5 can be discharged through the waste discharge groove 10 under the action of centrifugal force, avoiding residue and facilitating subsequent replacement and polishing of monocrystalline silicon wafers.

[0027] The above description is only a preferred embodiment of this utility model. For those skilled in the art, there will be changes in the specific implementation method and application scope based on the idea of ​​this utility model. The content of this specification should not be construed as a limitation of this utility model.

Claims

1. A waste removal fixture for surface polishing of monocrystalline silicon wafers, characterized in that, include: The device comprises a turntable, a buffer pad, and an annular pressure plate. The top of the turntable has a concentrically arranged upward-extending positioning ring. The buffer pad is fitted over the outside of the positioning ring. The annular pressure plate is positioned above the buffer pad. Several monocrystalline silicon wafer positioning grooves are spaced apart on the annular pressure plate. The bottom of each monocrystalline silicon wafer positioning groove extends to the surface of the buffer pad. An annular guide groove located outside the monocrystalline silicon wafer positioning groove is recessed on the annular pressure plate. A waste discharge groove is radially arranged along the edge of the annular pressure plate, passing through the annular guide groove and extending to the monocrystalline silicon wafer positioning groove.

2. The waste removal fixture for surface polishing of monocrystalline silicon wafers according to claim 1, characterized in that, The turntable and positioning ring are made of an integrated steel structure.

3. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 2, characterized in that, The positioning ring has a stepped hole in the middle that extends downward to the bottom surface of the turntable.

4. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 1, characterized in that, The annular pressure plate and the buffer pad are respectively provided with through holes corresponding to the positioning ring.

5. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 1, characterized in that, The turntable has several positioning holes spaced apart, and the bottom of the annular pressure plate has a positioning post extending downward into the positioning hole.

6. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 5, characterized in that, The annular pressure plate and the positioning column adopt an integrated plastic structure.

7. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 5, characterized in that, The buffer pad is provided with insertion holes that correspond one-to-one with the positioning posts.

8. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 1, characterized in that, The depth of the annular guide channel is less than the thickness of the annular pressure plate, and the depth of the waste discharge channel is the same as the thickness of the annular pressure plate.

9. The waste removal fixture for surface polishing of single-crystal silicon wafers according to claim 1, characterized in that, The cushioning pad is made of elastic silicone.