Manufacturing process for a detection device and detection devices

Abstract

Manufacturing process for a detection device comprising the following steps: Forming at least one sensitive area (10) with at least one exposed sensing surface (12) on and / or in a semiconductor substrate (14) such that during subsequent operation of the detection device at least one sensor signal of the at least one sensitive area (10) varies when at least one physical quantity and / or at least one chemical concentration of at least one substance to be detected changes at the sensing surface (12) of the respective sensitive area (10); Encapsulating at least a part of the semiconductor substrate (14) such that the at least one sensing surface (12) of the at least one sensitive area (10) is sealed air-, liquid- and / or particle-tight from an external environment of the at least partially encapsulated semiconductor substrate (14); and Forming at least one opening (52) on the at least partially encapsulated semiconductor substrate (14) such that at least one air, liquid and / or particle access (54) from the external environment of the at least partially encapsulated semiconductor substrate (14) to the at least one sensing surface (12) is created; wherein the detection device is designed with a memory (40); and wherein the detection device is designed with an evaluation or amplifier unit (38), wherein the evaluation or amplifier unit (38) is designed to, during the subsequent operation of the detection device, take into account at least one sensor signal and - taking into account an evaluation relation stored on the memory (40), to determine and output information regarding the at least one physical quantity and / or the at least one substance to be detected, or - to output an amplified signal taking into account an amplification relation stored on the memory (40); characterized in that prior to forming the at least one opening (52), at least one first calibration measurement is performed, for which the at least one sensor signal of the at least one sensitive area (10) is determined with the at least one sensing surface (12) sealed air-, liquid- and / or particle-tight from the external environment of the at least partially encapsulated semiconductor substrate (14) as at least one first calibration signal of the at least one first calibration measurement; and after forming the at least one opening (52) at least one second calibration measurement is carried out, for which the at least one sensor signal of the at least one sensitive area (10) is determined as at least one second calibration signal of the at least one second calibration measurement when the at least one air, liquid and / or particle access (54) is present; and wherein the evaluation relation or the amplifier relation is determined at least taking into account the at least one first calibration signal and the at least one second calibration signal and is stored on the memory (40).

Description

[0001] The invention relates to a manufacturing method for a detection device. Furthermore, the invention relates to detection devices. State of the art

[0002] German patent application DE 10 2010 064 108 A1 describes a method for packaging a sensor chip for the production of a detection device / sensor device. For this purpose, the sensor chip is first mounted on a carrier. Subsequently, the sensor chip is at least partially embedded in a molding compound. Finally, at least a section of media access to the sensor chip is created by subsequently structuring the molding compound.

[0003] WO 2012 / 072347A1 and US 6472891B1 describe devices and methods for testing a semiconductor component during its manufacture.

[0004] Furthermore, DE 20 2009 014 795 U1 describes a calibration of a pressure sensor module after its manufacture.

[0005] Furthermore, DE 10 2007 028 467 A1 and EP 2 009 432 A1 describe sensor types which are calibrated in the packaged state, whereby the respective packaging is only opened when the respective sensor is used. Disclosure of the invention

[0006] The invention provides a manufacturing method for a detection device with the features of claim 1, a detection device with the features of claim 8 and a detection device with the features of claim 9. Advantages of the invention

[0007] The present invention facilitates the manufacture of detection devices, such as sensor devices and amplifier devices, by performing at least one initial calibration measurement before forming the at least one opening for air, liquid, and / or particle access. Thus, for example, it is possible to detect, based on the at least one initial calibration signal, whether the intermediate product contains defects that would significantly impair the subsequent use of the finished detection device, even before the at least one opening is formed. If necessary, the manufacturing process can therefore be terminated early without performing unnecessary process steps for further processing the intermediate product into the finished detection device.Likewise, the airtight, liquid-tight, and / or particle-tight sealing of the at least one sensing surface of the at least one sensitive area can be used for an advantageous and easily performed calibration of the detection device, as will be explained below. The present invention thus contributes to reducing the manufacturing costs of a detection device.

[0008] Traditionally, testing and calibration costs constitute a significant portion of the production costs for detection devices. The present invention enables a significant reduction in these costs, thus making detection devices more cost-effective to manufacture.

[0009] Furthermore, after the formation of at least one opening, at least one second calibration measurement is performed. For this purpose, the at least one sensor signal of the at least one sensitive area is determined as at least one second calibration signal for the at least one second calibration measurement when at least one air, liquid, and / or particle access is present. Subsequently, the at least one first calibration signal and the at least one second calibration signal are used for an advantageous and cost-effective calibration of the finished detection device. For example, a detection device designed as a pressure sensor can be easily and reliably calibrated using at least one first calibration signal measured when the at least one sensing surface is without pressure and at least one second calibration signal measured when the at least one sensing surface is subjected to pressure.Pressure sensors generally exhibit (essentially) linear behavior, so that the at least one first calibration signal and the at least one second calibration signal are sufficient to establish a pressure-dependent detection characteristic without the need to use a pressure chamber to determine the at least one first calibration signal or the at least one second calibration signal.

[0010] In one possible embodiment of the manufacturing process, the detection device is configured with the evaluation unit and the memory, wherein the evaluation unit is designed to determine and output information regarding the at least one physical quantity and / or the at least one substance to be detected during subsequent operation of the detection device, taking into account at least one sensor signal and an evaluation relation stored in the memory, and wherein the evaluation relation is determined and stored in the memory taking into account at least one first calibration signal and at least one second calibration signal. Calibration of the evaluation unit according to this embodiment of the manufacturing process is therefore easily performed.

[0011] Alternatively, the detection device can be designed with an amplifier and a memory, wherein the amplifier is designed to output an amplified signal during subsequent operation of the detection device, taking into account at least one sensor signal and a gain ratio stored in the memory, and wherein the gain ratio is determined and stored in the memory, taking into account at least one first calibration signal and at least one second calibration signal. Thus, the calibration of the amplifier, as carried out in this embodiment of the manufacturing process, is also easily performed.

[0012] In particular, for defining linear relations such as the evaluation relation or the amplification relation, at least two calibration signals obtained in a simple way are sufficient.

[0013] In a further advantageous embodiment of the manufacturing process, the at least one sensitive area is formed on and / or in the semiconductor substrate, which is part of a wafer. The semiconductor substrate is structured from the wafer, and at least one positional piece of information regarding the position of the semiconductor substrate as part of the wafer is taken into account when determining the evaluation relation or the gain relation. Manufacturing variations among the multitude of semiconductor substrates obtained from the wafer can depend on their respective positions within the wafer. A reliable adjustment algorithm can be found through a few samples, by means of which a manufacturing variation dependent on the position of the respective semiconductor substrate can be compensated for by appropriately adjusting the consideration of this position when determining the evaluation relation or the gain relation.The embodiment of the manufacturing process described here thus contributes advantageously to compensating for manufacturing variations in the large-scale production of detection devices.

[0014] Advantageously, a pressure sensor, a blood pressure sensor, a sound sensor, a microphone, a temperature sensor, a chemical sensor, a gas sensor, an odor sensor, a liquid sensor, and / or a particle sensor can be used as the detection device. The present invention is therefore versatile. In particular, all of the sensor types listed above can also be manufactured on an industrial scale using the present invention. However, the applicability of the present invention is not limited to the sensor types listed here.

[0015] For example, a capacitor can be formed with a membrane that at least partially spans a cavity created in the semiconductor substrate, serving as the at least one sensitive area. Preferably, this is achieved such that a change in the pressure present at the sensing surface of the membrane, as the at least one physical quantity, causes a deformation of the membrane, thereby varying the capacitance of the capacitor. In this case, a current and / or voltage signal, dependent on the capacitance of the capacitor, also varies as the at least one sensor signal. The embodiment of the manufacturing process described here is easy to implement and versatile, suitable for applications such as pressure sensors, blood pressure sensors, sound sensors, microphones, and / or temperature sensors.However, it should be noted that the ability to form at least one sensitive area is not limited to the formation of the capacitor with the membrane.

[0016] Preferably, the at least one first calibration signal is measured when the diaphragm is at rest during the at least one first calibration measurement. Preferably, the at least one second calibration signal is measured when the diaphragm is exposed to a non-zero pressure, preferably atmospheric pressure, during the at least one second calibration measurement. In particular, utilizing atmospheric pressure to determine the at least one second calibration signal eliminates the need for a pressure chamber for testing / calibrating the finished detection device. Testing / calibrating the finished detection device is therefore faster and more cost-effective.

[0017] In a further advantageous development, the membrane temperature can be varied between several initial calibration measurements and / or between several secondary calibration measurements. Temperature-dependent calibration of the detection device can thus be performed simply and quickly.

[0018] The advantages described above can also be realized in the detection devices according to the invention. It should be noted that the detection devices according to the invention can be further developed in accordance with the previously described embodiments of the manufacturing process. Brief description of the drawings

[0019] Further features and advantages of the present invention are explained below with reference to the figures. They show: Fig. 1a to 1d schematic cross-sections to illustrate an embodiment of the manufacturing process for a detection device; Fig. 2 a schematic cross-section through a first embodiment of the detection device; and Fig. 3 a schematic cross-section through a second embodiment of the detection device. Embodiments of the invention

[0020] Fig. Figures 1a to 1d show schematic cross-sections to illustrate an embodiment of the manufacturing process for a detection device.

[0021] In the embodiment of the Fig. In sections 1a to 1d, at least one pressure sensor is manufactured as a detection device. However, it should be noted that the feasibility of the manufacturing process is not limited to manufacturing at least one detection device configured as a pressure sensor. For example, at least one blood pressure sensor, at least one sound sensor, at least one microphone, at least one temperature sensor, at least one chemical sensor (at least one chemical detection sensor and / or at least one chemical concentration measuring device), at least one gas sensor, at least one odor sensor, at least one liquid sensor, and / or at least one particle sensor can also be manufactured as the at least one detection device using the (possibly appropriately adapted) manufacturing process. The feasibility of the manufacturing process is not limited to a specific type of sensor device and / or amplifier device as a detection device.

[0022] Furthermore, the manufacturing process described here can also be carried out on an industrial scale. As shown by the Fig. 1a and Fig. As can be seen from section 1b, a large number of detection devices can be manufactured (almost) simultaneously using the manufacturing process described here.

[0023] In a way that Fig. In the schematically depicted process step 1a, at least one sensitive area 10 with at least one exposed sensing surface 12 is formed on and / or in a (subsequent) semiconductor substrate 14. The formation of the at least one sensitive area 10 on and / or in a functionalized side of the semiconductor substrate 14 is carried out such that, during subsequent operation of the (finished) detection device, at least one sensor signal of the at least one sensitive area 10 varies at the sensing surface 12 of the respective sensitive area 10 when at least one physical quantity and / or at least one chemical concentration of at least one substance to be detected changes. The at least one sensor signal can be at least one signal output by the respective sensitive area 10 and / or one signal determined or tapped at the respective sensitive area 10.For example, the at least one sensor signal can be at least a current and / or voltage signal, which varies due to a deformation and / or change in a physical property of at least one subunit of the respective sensitive area 10 triggered by a change in the at least one physical quantity and / or the at least one chemical concentration of the at least one substance to be detected at the sensing surface 12. This can also be described as the formation of the at least one sensitive area 10 occurring in such a way that the change in the at least one physical quantity and / or the at least one chemical concentration of the at least one substance to be detected at the sensing surface 12 causes the deformation and / or change in the physical property of at least one subunit of the respective sensitive area 10, which can be determined by means of a variation of the at least one sensor signal.In the embodiment of the . Fig. 1a to 1d a large number of sensitive areas 10 are formed accordingly in a large number of (later isolated) semiconductor substrates 14, each of which is part of a wafer 16.

[0024] For example, a capacitor with a diaphragm 18, which at least partially spans a cavity 20 formed in the semiconductor substrate 14, can be considered to have at least one sensitive region 10. (For the sake of clarity, further components of the capacitor are not shown in the following.) Fig. (1a to 1d omitted.) A surface of the associated membrane 18 facing away from the cavern 20 is thus advantageously suitable as a sensing surface 12 of the sensitive area 10 thus configured. A change in the pressure present at the sensing surface 12 of the membrane 18 (as the at least one physical quantity) can cause a deformation of the membrane 18, thereby varying the capacitance of the capacitor. This triggers a variation in a current and / or voltage signal (as the at least one sensor signal of the respective sensitive area 10) that depends on the capacitance of the capacitor. Since a multitude of configurations for the capacitor are known from the prior art, they will not be discussed in more detail here.

[0025] The in Fig. The configuration of the sensitive area 10 shown in Figure 1a is well suited for a pressure sensor (absolute pressure sensor) in which pressure measurement (absolute pressure measurement) can be performed by deformation / deflection of the diaphragm 18. For this purpose, the pressure to be measured is applied to the sensing surface 12 of the diaphragm 18, while a reference pressure prevailing in the cavern 20 is applied to an inner surface 22 of the diaphragm 18 (directed away from the sensing surface 12 and bounding the cavern 20). A vacuum or a very low pressure is advantageous as the reference pressure in order to limit / prevent an increase in the reference pressure (due to the expansion of at least one gas present in the cavern 20) in the event of a temperature increase. Since techniques for setting a defined reference pressure in the cavern 20 are already known from the prior art, they will not be discussed in detail here.

[0026] In the embodiment of the Fig. 1a Optionally, a contact pad 24 is also formed on the functionalized side of the semiconductor substrate 14 (with the membrane 18). Furthermore, an optional adhesive layer 26 is deposited on the opposite side of the semiconductor substrate 14 (facing away from the functionalized side). However, the deposition of the contact pad 24 and / or the adhesive layer 26 are optional process steps.

[0027] Fig. Figure 1b shows a first process step for encapsulating at least a part of the semiconductor substrate. In the embodiment of the Fig. 1b A further semiconductor substrate 28 (possibly partially hollowed out) is attached to the semiconductor substrate 14 as at least one encapsulation structure 28 by means of at least one bond and / or adhesive layer 30 such that the encapsulation structure 28 spans the at least one sensitive area 10 / the membrane 18. Optionally, a vacuum / low pressure can be enclosed in an intermediate volume 32 between the at least one sensitive area 10 / the membrane 18 and the encapsulation structure 28.

[0028] Subsequently, the semiconductor substrate 14 (with at least one sensitive area 10 on and / or in the semiconductor substrate 14), which is part of the wafer 16, can be patterned out of the wafer 16. Before patterning out the semiconductor substrate 14, however, at least one positional information a1 and a2 regarding a position / orientation of the semiconductor substrate 14 as part of the wafer 16 can be defined and / or stored for later calibration of the semiconductor substrate 14. For example, a first distance a1 of the semiconductor substrate 14 from a (not shown) center point of the wafer 16 and / or a second distance a2 of the semiconductor substrate 14 from an edge of the wafer 16 can be defined and / or stored as the at least one positional information a1 and a2. In this case, the at least one positional information a1 and a2 can be taken into account during a later calibration.(The consideration of at least one position information a1 and a2 during the calibration of the detection device formed by means of the respective semiconductor substrate 14 will be discussed in more detail below.)

[0029] Fig. Figure 1c shows a further process step for encapsulating at least a part of the semiconductor substrate 14 (after its separation from the wafer 16). For this purpose, the semiconductor substrate 14 is attached to a printed circuit board 34 (using the adhesive layer 26). Then, at least one encapsulation material 36 (e.g., at least one molding compound 36) is deposited onto the printed circuit board 34 such that the semiconductor substrate 14 (with the encapsulation structure 28) is at least partially (possibly completely) embedded in it. The in Fig. The encapsulation of the semiconductor substrate 14 shown in Figure 1c ensures that the at least one sensing surface 12 of the at least one sensitive area 10 / of the membrane 18 is sealed airtight, liquid-tight, and / or particle-tight from the external environment of the at least partially encapsulated semiconductor substrate. In particular, the at least one sensing surface 12 of the at least one sensitive area 10 / of the membrane 18 is sealed from the external environment by means of encapsulation in such a way that even in the event of a (significant) change in the at least one physical quantity and / or the at least one chemical concentration of the at least one substance to be detected in the external environment of the at least partially encapsulated semiconductor substrate, effects on the at least one sensitive area 10 / of the membrane 18 are (essentially) prevented.The at least one sensor signal therefore does not change / hardly changes despite the (significant) change in the at least one physical quantity and / or the at least one chemical concentration of the at least one substance to be detected in the external environment of the at least partially encapsulated semiconductor substrate (due to the airtight, liquid-tight, and / or particle-tight seal). In the manufacture of at least one pressure sensor, the at least one sensing surface 12 of the at least one sensitive area 10 / of the membrane 18 is, for example, sealed airtight (pressure-tight) from the external environment of the at least partially encapsulated semiconductor substrate.

[0030] As an optional further training, the implementation of the Fig. 1a to 1d the detection device is configured with an evaluation unit 38 and a memory 40 (possibly as a subunit of the evaluation unit 38), wherein the evaluation unit 38 is designed to determine and output information regarding the at least one physical quantity and / or the at least one substance to be detected during the subsequent operation of the detection device, taking into account at least one sensor signal and an evaluation relation stored on the memory 40. The evaluation unit 38 with the memory 40 can, for example, be / be manufactured as an application-specific integrated circuit (ASIC) (formed externally from the semiconductor substrate 14). Likewise, the evaluation unit 38 and / or the memory 40 can also be formed on and / or in the semiconductor substrate 14.Furthermore, the suitability of the evaluation unit 38 and the memory 40 for training purposes is not limited to a specific circuit type or memory type.

[0031] The evaluation unit 38 can be attached to the circuit board 34 by means of a further adhesive layer 42. A contact pad 46 of the evaluation unit 38 can be connected to the contact pad 24 of the semiconductor substrate 14 via a first bond wire connection 44. Another contact pad 48 of the evaluation unit 38 can be connected to the circuit board 34 via a second bond wire connection 50. Optionally, the evaluation unit 38 and / or at least one of the bond wire connections 44 and 50 (together with at least a part of the semiconductor substrate 14) can also be embedded in the at least one encapsulation material 36.

[0032] After encapsulating at least part of the semiconductor substrate 14, at least one initial test and / or calibration measurement is performed, for which the at least one sensor signal from the at least one sensitive area 10 with the at least one sensing surface 12, which is sealed airtight, liquid-tight, and / or particle-tight from the external environment of the at least partially encapsulated semiconductor substrate 14, is determined as at least one initial test and / or calibration signal. The at least one initial test and / or calibration signal obtained in this way is well suited for testing / verifying whether further processing of the in Fig. The intermediate product shown in Figure 1c is still worthwhile. As explained in more detail below, the at least one first test and / or calibration signal obtained in this way is also advantageously suited for a subsequent calibration of the detection device made from at least the semiconductor substrate 14. Furthermore, it can be advantageous to temporarily store the at least one first test and / or calibration signal on the memory 40 until the subsequent calibration is performed.

[0033] In the embodiment of the Fig. In steps 1a to 1d, at least one initial test and calibration measurement is performed while (almost) the same pressure is applied to surfaces 12 and 22 of the membrane 18 (due to the lack of air / pressure access or the airtight seal from the external environment). Thus, (to a first approximation) the at least one initial test and / or calibration signal for "vacuum / no external pressure" is measured. This can also be described as the at least one initial test and / or calibration signal being measured with the membrane 18 at zero pressure during the at least one initial test and / or calibration measurement.

[0034] Fig. Figure 1d shows the at least partially encapsulated semiconductor substrate 14 after the formation of at least one opening 52 on the at least partially encapsulated semiconductor substrate 14, such that at least one air, liquid, and / or particle access 54 from the external environment of the at least partially encapsulated semiconductor substrate 14 to the at least one sensing surface 12 is created. It is expressly noted that the at least one initial test and / or calibration measurement is performed before the formation of the at least one opening 52.The formation of the at least one opening 52 is such that, due to the (open) presence of the at least one air, liquid and / or particle access 54, a change in the at least one physical quantity and / or the at least one chemical concentration of the at least one substance to be detected in the external environment leads to a change in the at least one physical quantity and / or the at least one chemical concentration at the at least one (exposed) sensing surface 12 (detectable by varying the at least one sensor signal).In the manufacture of at least one pressure sensor, for example, an air access / pressure access 54 from the external environment of the at least partially encapsulated semiconductor substrate 14 to the at least one sensing surface 12 is created by means of the at least one opening 52, so that an ambient pressure present in the external environment of the at least partially encapsulated semiconductor substrate 14 causes a deformation of the membrane 18.

[0035] After forming the at least one opening 52, at least one second test and / or calibration measurement is performed in the embodiment of the manufacturing process described here, for which the at least one sensor signal of the at least one sensitive area 10 / of the membrane 18 is determined as at least one second test and / or calibration signal of the at least one second test and / or calibration measurement when the at least one air, liquid and / or particle access 54 is (open). For example, the at least one second test and / or calibration signal is measured when the membrane 18 is exposed to atmospheric pressure during the at least one second test and / or calibration measurement.

[0036] The evaluation relation (for evaluating the at least one sensor signal by the evaluation unit 38 during the subsequent operation of the detection device) is then defined, taking into account at least one first test and / or calibration signal and at least one second test and / or calibration signal. For example, calibration values / adjustment values ​​and / or at least one calibration algorithm / at least one characteristic curve can be defined as the evaluation relation. Despite the ease with which the at least one first test and / or calibration signal and the at least one second test and / or calibration signal can be determined / measured, these signals are advantageously suited for defining the evaluation relation. For example, a linear relation can easily be defined as the evaluation relation, taking into account the at least one first test and / or calibration signal and the at least one second test and / or calibration signal.The evaluation relation is then stored in memory.

[0037] Traditionally, most pressure sensors are calibrated after production to compensate for manufacturing variations. According to current best practices, the (finished) pressure sensors are placed in a pressure chamber. Calibration measurements are then performed in the chamber at at least two different pressure values. Based on these calibration measurements, the pressure sensors are subsequently adjusted. However, calibration measurements in the pressure chamber can only be performed with a relatively small number of pressure sensors simultaneously.

[0038] In contrast, the manufacturing process described here enables a less complex calibration process, which nevertheless ensures high measurement and detection accuracy for the at least one calibrated detection device. In particular, the calibration can be performed without the use of a pressure chamber and is therefore more cost-effective and simpler compared to the prior art. In addition to determining the at least one initial test and / or calibration signal under vacuum / no external pressure during the initial test and / or calibration measurement, the at least one second test and / or calibration signal can be determined for the second test and / or calibration measurement at atmospheric / room pressure. (The atmospheric / room pressure can also be determined very precisely using a calibrated measuring device.)This eliminates the need for conventional calibration measurements in a pressure chamber when using the manufacturing process described here. The elimination of the pressure chamber also allows for simpler contacting of the detection devices. This simplified contacting enables improved temperature control, allowing for the measurement and calibration of more detection devices in a shorter time. Even wafer-level calibration is possible. Furthermore, more detection devices can be measured simultaneously than would be possible due to the spatial limitations of the conventionally required pressure chamber.

[0039] In an advantageous further development of the manufacturing process described here, the temperature of the membrane 18 (or a temperature in the spatial environment of the membrane 18) can be varied between several initial test and / or calibration measurements and / or between several subsequent test and / or calibration measurements. The pressure- and temperature-dependent signals of the initial test and / or calibration measurements and / or the subsequent test and / or calibration measurements can then be used to establish a pressure- and temperature-dependent evaluation relationship for calibrating the detection device. Thus, pressure- and temperature-dependent calibration can also be performed without the use of a pressure chamber. In the conventionally required pressure chamber, the temperature can only be varied slowly, which is why the pressure chamber must be occupied for a very long time for each measurement cycle. In contrast, the temperature of the membrane 18 (orThe temperature in the spatial vicinity of the membrane 18) can be varied relatively quickly and easily for the first and / or second test and / or calibration measurements. In particular, due to the elimination of the pressure chamber, very rapid temperature ramps can also be applied. In this case, it is especially advantageous to perform a temperature measurement within the pressure sensor. Furthermore, the temperature readings of the first test and / or calibration measurements can be temporarily stored in the memory 40 before the formation of at least one opening 52, and / or the temperature readings of the second test and / or calibration measurements can also be stored after the formation of at least one opening 52. With this further development, the calibration / adjustment process is comparatively less complex and less expensive to perform.

[0040] In another advantageous refinement, the evaluation relation is defined by taking into account at least one piece of positional information, a1 and a2, regarding the (previous or current) position / location of the semiconductor substrate 14 as part of the wafer 16. A reliable calibration algorithm can be found through sampling, which at least partially compensates for manufacturing variations / deviations (e.g., "shadowing effects" during at least one etching) that depend on the position / location of the semiconductor substrate 14 as part of the wafer 16. The calibration algorithm can be statistically reliably defined for all semiconductor substrates 14 of many wafers 18 by running a few samples from one wafer 16. The evaluation relation can then be defined, taking into account the at least one piece of positional information, a1 and a2, and the defined calibration algorithm.

[0041] In an alternative embodiment of the manufacturing process described here, the at least one detection device can also be configured with an amplifier and a memory 40, wherein the amplifier is designed to output an amplified signal during subsequent operation of the detection device, taking into account at least one sensor signal and an amplification ratio stored in the memory 40. In this case, the amplification ratio is determined at least by taking into account the at least one first test and / or calibration signal, preferably also by taking into account the at least one second test and / or calibration signal and / or by taking into account the at least one position information a1 and a2 and the defined adjustment algorithm. The amplification ratio is then stored in the memory 40.

[0042] Fig. Figure 2 shows a schematic cross-section through a first embodiment of the detection device.

[0043] The in Fig. 2. A detection device, schematically depicted, comprises a semiconductor substrate 14 with at least one sensitive area 10 formed on and / or in the semiconductor substrate 14, wherein the semiconductor substrate 14 is at least partially encapsulated by means of at least one encapsulation material 36 and / or at least one encapsulation structure 28. At least one sensing surface 12 of the at least one sensitive area 10 is exposed by means of at least one air, liquid, and / or particle access 54, which extends from an external environment of the at least partially encapsulated semiconductor substrate 14 to the at least one sensing surface 12 and at least partially through the at least one encapsulation material 36 and / or the at least one encapsulation structure 28.At least one sensor signal of the at least one sensitive area 10 varies when at least one physical quantity and / or at least one chemical concentration of at least one substance to be detected changes at the sensing surface 12 of the respective sensitive area 10. Furthermore, the detection device has an evaluation unit 38 with a memory 40, wherein the evaluation unit 38 is designed to determine and output information regarding the at least one physical quantity and / or the at least one substance to be detected, taking into account at least one sensor signal and an evaluation relation stored in the memory 40.

[0044] The manufacture of the detection device according to the manufacturing process described above can be recognized, for example, by the fact that the evaluation relation includes at least one initial test and / or calibration signal, which is determined as the at least one sensor signal when the at least one sensing surface 12 of the at least partially encapsulated semiconductor substrate 14 is sealed airtight, liquid-tight, and / or particle-tight from the external environment. The manufacture of the detection device with an integrated pressure sensor 56 and an integrated accelerometer 58 according to the manufacturing process described above can be verified, for example, by a high-precision measurement over pressure (and possibly over temperature). In particular, a static analysis of a fault over pressure (and possibly over temperature) can demonstrate that the calibration was performed under vacuum and ambient pressure.

[0045] In addition, an analysis of the evaluation unit 38 / memory 40 can be performed to verify the manufacture of the detection device using the manufacturing process. The memory 40 contains, for example, calibration values / adjustment values ​​and / or at least one calibration algorithm / at least one characteristic curve as evaluation parameters, from which conclusions can be drawn about adjustment under vacuum and / or normal ambient pressure.

[0046] Reference numeral 60 refers to an etch stop layer. Instead of the evaluation device 38, the detection device can also have an amplifier device with a memory 40, wherein the amplifier device is designed to output an amplified signal taking into account at least one sensor signal and a gain ratio stored in the memory 40, and wherein the gain ratio comprises at least one first test and / or calibration signal, which is determined as the at least one sensor signal when the at least one sensing surface 12 of the at least partially encapsulated semiconductor substrate 14 is sealed airtight, liquid-tight and / or particle-tight from the external environment.

[0047] Fig. Figure 3 shows a schematic cross-section through a second embodiment of the detection device.

[0048] As demonstrated by Fig.As can be seen from Figure 3, the detection device can also be designed as a bare-die element. Especially with a detection device designed as a bare-die element, the first test and calibration measurements, or the first and second test and calibration measurements, can be performed at the wafer level. Additionally, the use of the at least one encapsulation material 36 can be omitted. Correspondingly, the at least one capping structure 28 and / or the printed circuit board 34 can also be omitted.

Claims

[1] Manufacturing process for a detection device comprising the steps: Forming at least one sensitive area (10) with at least one exposed sensing surface (12) on and / or in a semiconductor substrate (14) such that during subsequent operation of the detection device at least one sensor signal of the at least one sensitive area (10) varies when at least one physical quantity and / or at least one chemical concentration of at least one substance to be detected is changed at the sensing surface (12) of the respective sensitive area (10); Encapsulating at least a part of the semiconductor substrate (14) such that the at least one sensing surface (12) of the at least one sensitive area (10) is sealed air-, liquid- and / or particle-tight from an external environment of the at least partially encapsulated semiconductor substrate (14); and Forming at least one opening (52) on the at least partially encapsulated semiconductor substrate (14) such that at least one air, liquid and / or particle access (54) from the external environment of the at least partially encapsulated semiconductor substrate (14) to the at least one sensing surface (12) is created; wherein the detection device is designed with a memory (40); and wherein the detection device is designed with an evaluation or amplifier unit (38), wherein the evaluation or amplifier unit (38) is designed to, during the subsequent operation of the detection device, take into account at least one sensor signal and - taking into account an evaluation relation stored on the memory (40), to determine and output information regarding the at least one physical quantity and / or the at least one substance to be detected, or - to output an amplified signal taking into account an amplification relation stored in memory (40); characterized by , that prior to forming the at least one opening (52), at least one first calibration measurement is performed, for which the at least one sensor signal of the at least one sensitive area (10) is determined with the at least one sensing surface (12) sealed air-, liquid- and / or particle-tight from the external environment of the at least partially encapsulated semiconductor substrate (14) as at least one first calibration signal of the at least one first calibration measurement; and after forming the at least one opening (52) at least one second calibration measurement is carried out, for which the at least one sensor signal of the at least one sensitive area (10) is determined as at least one second calibration signal of the at least one second calibration measurement when the at least one air, liquid and / or particle access (54) is present; and wherein the evaluation relation or the amplifier relation is determined at least taking into account the at least one first calibration signal and the at least one second calibration signal and is stored on the memory (40). [2] Manufacturing method according to claim 1, wherein a calibration algorithm or a characteristic curve is defined as an evaluation relation taking into account the at least one first calibration signal and the at least one second calibration signal. [3] Manufacturing method according to claim 1 or 2, wherein the at least one sensitive area (10) is formed on and / or in the semiconductor substrate (14) which is part of a wafer (16), wherein the semiconductor substrate (14) is structured out of the wafer (16), and wherein at least one position information (a1, a2) regarding a position of the semiconductor substrate (14) as part of the wafer (16) is taken into account when determining the evaluation relation or the amplification relation. [4] Manufacturing method according to one of the preceding claims, wherein a pressure sensor (56), a blood pressure sensor, a sound sensor, a microphone, a temperature sensor, a chemical sensor, a gas sensor, an odor sensor, a liquid sensor and / or a particle sensor are manufactured as the detection device. [5] Manufacturing method according to one of the preceding claims, wherein a capacitor with a membrane (18) which at least partially spans a cavity (20) formed in the semiconductor substrate (14) is formed as the at least one sensitive area (10) such that a change in pressure present at the sensing surface (12) of the membrane (18) as the at least one physical quantity causes a deformation of the membrane (18), whereby a capacitance of the capacitor varies and a current and / or voltage signal dependent on the capacitance of the capacitor as the at least one sensor signal varies. [6] Manufacturing method according to claim 5, wherein the at least one first calibration signal is measured when the membrane (18) is in a pressureless state during the at least one first calibration measurement and the at least one second calibration signal is measured when the membrane (18) is exposed to atmospheric pressure during the at least one second calibration measurement. [7] Manufacturing method according to claim 6, wherein the temperature of the membrane (18) is varied between several first calibration measurements and / or between several second calibration measurements. [8] Detection device with: a semiconductor substrate (14) with at least one sensitive area (10) formed on and / or in the semiconductor substrate (14), wherein the semiconductor substrate (14) is at least partially encapsulated by means of at least one encapsulation material (36) and / or at least one encapsulation structure (28), wherein at least one sensing surface (12) of the at least one sensitive area (10) is exposed by means of at least one air, liquid and / or particle access (54), which extends from an external environment of the at least partially encapsulated semiconductor substrate (14) at least partially through the at least one encapsulation material (36) and / or the at least one encapsulation structure (28) to the at least one sensing surface (12),and wherein at least one sensor signal of the at least one sensitive area (10) varies when at least one physical quantity and / or at least one chemical concentration of at least one substance to be detected changes at the sensing surface (12) of the respective sensitive area (10); and, an evaluation device (38) with a memory (40), wherein the evaluation device (38) is designed to determine and output information regarding the at least one physical quantity and / or the at least one substance to be detected, taking into account at least one sensor signal and an evaluation relation stored on the memory (40); characterized by , that the evaluation relation comprises at least one first calibration signal, which is determined as the at least one sensor signal when the at least one sensing surface (12) of the at least partially encapsulated semiconductor substrate (14) is sealed air-, liquid- and / or particle-tight from the external environment, and at least one second calibration signal, which is determined as the at least one sensor signal when the at least one air-, liquid- and / or particle access (54) is present. [9] Detection device with: a semiconductor substrate (14) with at least one sensitive area (10) formed on and / or in the semiconductor substrate (14), wherein the semiconductor substrate (14) is at least partially encapsulated by means of at least one encapsulation material (36) and / or at least one encapsulation structure (28), wherein at least one sensing surface (12) of the at least one sensitive area (10) is exposed by means of at least one air, liquid and / or particle access (54), which extends from an external environment of the at least partially encapsulated semiconductor substrate (14) at least partially through the at least one encapsulation material (36) and / or the at least one encapsulation structure (28) to the at least one sensing surface (12),and wherein at least one sensor signal of the at least one sensitive area (10) varies when at least one physical quantity and / or at least one chemical concentration of at least one substance to be detected changes at the sensing surface (12) of the respective sensitive area (10); and, an amplifier device with a memory (40), wherein the amplifier device is designed to output an amplified signal taking into account at least one sensor signal and an amplification relation stored in the memory (40); characterized by , that the gain relation comprises at least one first calibration signal, which is determined as the at least one sensor signal when the at least one sensing surface (12) of the at least partially encapsulated semiconductor substrate (14) is sealed air-, liquid- and / or particle-tight from the external environment, and at least one second calibration signal, which is determined as the at least one sensor signal when the at least one air-, liquid- and / or particle access (54) is present.

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