OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

Abstract

Optoelectronic component (1) with - at least four optoelectronic semiconductor chips (R,G,B) designed to emit or detect light of different colors during operation, - at least two contact elements (2) for electrical contacting at least one of the optoelectronic semiconductor chips (R,G,B), - at least two electrically conductive connections (3) arranged on a top surface of the optoelectronic component (1a), - at least two further electrically conductive connections (3) arranged on a base surface of the optoelectronic component (1b), and - an enclosure body (4) which is electrically insulating, wherein - the optoelectronic semiconductor chips (R, G, B) and the contact elements (2) are arranged along rows and columns, - the optoelectronic semiconductor chips (R,G,B) and the contact elements (2) are embedded in the casing body (4), - the electrically conductive connections (3) are arranged in places on the casing body (4), - the other electrically conductive connections (3) are arranged in places on the casing body (4), - the optoelectronic semiconductor chips (R, G, B), which are arranged in a common column, are electrically connected to each other by one of the contact elements (2) via one of the electrically conductive connections (3), - the optoelectronic semiconductor chips (R, G, B), which are arranged in a common row, are electrically connected to each other by one of the further electrically conductive connections (3), - a floor surface of at least one of the contact elements (2) is freely accessible and is designed as a contact surface, and - a floor surface of at least one of the further electrically conductive connections (3) is freely accessible and is designed as a further contact surface.

Description

[0001] An optoelectronic component is specified. Furthermore, a method for producing such an optoelectronic component is specified.

[0002] The document DE 10 2012 002 605 A1 describes a method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component. The document DE 10 2014 116 385 A1 describes light-emitting diodes on a wafer-level package. The document DE 10 2014 117 897 A1 describes a method for producing optoelectronic modules and an arrangement comprising such a module. The document JP S57 - 52 072 A describes a display. DE 10 2007 030 129 A1 describes a method for producing a plurality of optoelectronic components and an optoelectronic component.

[0003] One problem to be solved is to provide an optoelectronic component that is particularly compact and cost-effective. Another problem to be solved is to provide a method for producing such an optoelectronic component.

[0004] An optoelectronic component is, for example, a radiation-emitting component that emits electromagnetic radiation, particularly visible light, during operation. For example, the component is a light-emitting diode.

[0005] The optoelectronic component comprises at least two optoelectronic semiconductor chips, which are designed, for example, to emit or detect light of different colors during operation. The at least two optoelectronic semiconductor chips are, for example, radiation-emitting semiconductor chips, such as light-emitting diode chips (LED chips for short) or laser diode chips.

[0006] The at least two optoelectronic semiconductor chips each have a top surface, a bottom surface, and at least one side surface. The top surface is arranged opposite the bottom surface. The top surface and the bottom surface are connected to one another by the at least one side surface.

[0007] In particular, the at least two optoelectronic semiconductor chips are arranged spaced apart from one another in lateral directions. The lateral directions run, for example, parallel to the top surface of the optoelectronic semiconductor chips. This means that in a direction that runs, for example, parallel to the top surface of the at least two optoelectronic semiconductor chips, the at least two optoelectronic semiconductor chips are spaced apart and do not touch one another. The bottom surfaces of the at least two optoelectronic semiconductor chips each lie, for example, in a common plane. Furthermore, the at least two optoelectronic semiconductor chips can have essentially the same height. Essentially the same means that the heights for different optoelectronic semiconductor chips can vary by a maximum of + / - 20%, in particular by a maximum of + / - 10%, due to manufacturing tolerances.

[0008] If the optoelectronic component has more than two optoelectronic semiconductor chips, these can be arranged in a matrix-like manner, i.e., arranged along rows and columns, in one plane. Furthermore, the optoelectronic semiconductor chips can be arranged, for example, at grid points of a regular grid.

[0009] The radiation-emitting component can, for example, comprise exactly three radiation-emitting semiconductor chips. The radiation-emitting semiconductor chips are then configured, for example, in pairs during operation to generate light of different colors. For example, one radiation-emitting semiconductor chip emits red light, another radiation-emitting semiconductor chip emits green light, and another radiation-emitting semiconductor chip emits blue light.

[0010] The radiation-emitting semiconductor chips can, for example, be arranged along a line. Alternatively, it is possible to arrange the radiation-emitting semiconductor chips at the vertices of a triangle.

[0011] Alternatively, the optoelectronic component can also be an optoelectronic component designed for detecting electromagnetic radiation. This means that the at least two radiation-emitting semiconductor chips of the optoelectronic component are then provided by at least two radiation-detecting semiconductor chips. Furthermore, the component can comprise both radiation-emitting and radiation-detecting semiconductor chips.

[0012] For example, the optoelectronic component can comprise at least one radiation-detecting semiconductor chip and at least one radiation-emitting semiconductor chip. The at least one radiation-detecting semiconductor chip is designed, for example, to detect the electromagnetic radiation emitted during operation of the at least one radiation-detecting semiconductor chip. The optoelectronic component comprises a plurality of radiation-detecting and radiation-emitting semiconductor chips arranged along rows and columns, for example, in a plane.

[0013] The optoelectronic component comprises a contact element for electrically contacting at least one of the optoelectronic semiconductor chips. The contact element is arranged at a lateral distance from the at least two optoelectronic semiconductor chips. This means that the contact element is arranged laterally from the at least two optoelectronic semiconductor chips.

[0014] The contact element has a top surface, a bottom surface, and at least one side surface. The top surface is arranged opposite the bottom surface. The top surface and the bottom surface are connected to one another by the at least one side surface. The bottom surface of the contact element lies, for example, in a common plane with the bottom surfaces of the at least two optoelectronic semiconductor chips. Furthermore, the contact element and the at least two optoelectronic semiconductor chips can have essentially the same height. Essentially the same means that the heights for different optoelectronic semiconductor chips and the contact element can vary by a maximum of + / - 20%, in particular by a maximum of + / - 10%, due to manufacturing tolerances.

[0015] The at least one contact element comprises, for example, or consists of, an electrically conductive material. The electrically conductive material is, for example, a metal or a semiconductor material. The electrically conductive material contains or consists, for example, of silicon, which can be doped or undoped.

[0016] The optoelectronic component comprises an electrically conductive connection that electrically connects at least one of the semiconductor chips to the contact element. The electrically conductive connection is, for example, in direct and immediate contact with the at least one semiconductor chip and the contact element. The electrically conductive connection is formed, for example, with a metal or an electrically conductive adhesive. Furthermore, the electrical connection can comprise a combination of several metals.

[0017] The electrically conductive connection has, for example, a thickness that can be between at least 1 µm and at most 15 µm. The thickness of the at least one electrically conductive connection is constant over the entire extent of the electrically conductive connection, within the manufacturing tolerance, in particular within the manufacturing tolerance. The electrically conductive connection has, for example, a width that is large compared to the thickness of the electrically conductive connection. The width of the electrically conductive connection can, for example, be larger than the thickness of the electrically conductive connection by a factor of 10, 100, or 1000.

[0018] The optoelectronic component comprises an electrically insulating encapsulating body. The encapsulating body is, for example, transparent or opaque to the radiation emitted or detected by the optoelectronic semiconductor chips. The encapsulating body can be designed to reflect, in particular diffusely reflect, or absorb the radiation emitted or detected by the optoelectronic semiconductor chips. The encapsulating body is formed, for example, from a matrix material. The matrix material is formed, for example, from a plastic such as a silicone, an epoxy, or an epoxy hybrid material. A colorant such as carbon black or a pigment can be added to the plastic, for example. Thus, the encapsulating body can appear black, white, or colored.

[0019] If the encapsulating body is designed to be reflective, light-reflecting particles can be incorporated into the matrix material. The particles are formed, for example, with or contain at least one of the following materials: TiO2, BaSO4, ZnO, Al x O y This means that electromagnetic radiation emerging from the side surfaces of the radiation-emitting semiconductor chip can then be reflected by the encapsulating body. Furthermore, the encapsulating body forms the mechanically stabilizing component of the optoelectronic component.

[0020] The optoelectronic semiconductor chips and the contact element are embedded in the encapsulating body. "Embedded" means, for example, that the optoelectronic semiconductor chips and the contact element are adjacent to the encapsulating body, are partially located within the encapsulating body, and / or are enclosed by the encapsulating body on at least part of its outer surface.

[0021] The side surfaces of the at least two optoelectronic semiconductor chips and the at least one side surface of the contact element are, for example, completely covered by the encapsulating body. The encapsulating body is in direct and immediate contact with the side surfaces of the semiconductor chips and the at least one side surface of the contact element. A cover surface and an opposite bottom surface of the encapsulating body are, for example, flush with the cover surface and bottom surface of the semiconductor chips and the cover surface and bottom surface of the contact element. This means that the cover surface and bottom surface of the semiconductor chip and the contact element are, in particular, substantially free of the encapsulating body. "Substantially free" means that small amounts of the encapsulating body can be arranged on the cover surface and bottom surface of the semiconductor chip and the contact element due to manufacturing tolerances.

[0022] Alternatively, it is possible for the side surfaces to be covered by the encapsulating body only up to a certain height. This means that only the top surface or the bottom surface of the encapsulating body is flush with, for example, the top surface or the bottom surface of the semiconductor chips and the top surface or the bottom surface of the contact element.

[0023] The electrically conductive connection is arranged in places on the encapsulating body. The at least one optoelectronic semiconductor chip and the contact element are arranged, for example, at a distance from one another. This means that the electrically conductive connection is routed from the at least one optoelectronic semiconductor chip to the contact element via the encapsulating body. The electrically conductive connection is in direct and immediate contact with the encapsulating body.

[0024] In at least one embodiment, the optoelectronic component comprises at least two optoelectronic semiconductor chips configured to emit or detect light of different colors during operation, a contact element for electrically contacting at least one of the semiconductor chips, an electrically conductive connection that electrically connects at least one of the semiconductor chips to the at least one contact element, and an electrically insulating encapsulating body. The semiconductor chip and the contact element are embedded in the encapsulating body, and the electrically conductive connection is arranged in places on the encapsulating body.

[0025] The optoelectronic component described here makes use, among other things, of the idea that semiconductor chips and contact elements are incorporated into an encapsulating body, contacted with each other via electrically conductive connections and can be directly contacted.

[0026] Currently, lead frames, ceramics, and printed circuit boards (PCBs) are used to house semiconductor chips and conductor tracks in a component. Semiconductor chips are mounted in preformed packages and then contacted with wires (wire bonding). The assembly can then be encapsulated, for example, with silicone.

[0027] One idea behind the optoelectronic component described here is to use an adhesive foil to which the semiconductor chips and contact elements are applied before the encapsulation material is applied (foil-assisted molding, or FAM for short). After the encapsulation material is applied, the semiconductor chips and contact elements can then be electrically connected to each other. The contact elements and the electrically conductive connections can be used as contacts for supplying power to the semiconductor chips.

[0028] Advantageously, components manufactured in this way do not require complex lead frames or circuit boards. This reduces the production costs of optoelectronic components. Furthermore, the FAM process eliminates the need for additional soldering or bonding of the semiconductor chips prior to encapsulation, allowing the components to be arranged closer together. The components can be positioned on the film using a pick-and-place process, for example. Advantageously, this allows design changes to be implemented quickly, as only the pick-and-place process needs to be reprogrammed.

[0029] According to at least one embodiment, the optoelectronic component comprises at least two electrically conductive connections, in which the at least two electrically conductive connections electrically connect a contact element and each one of the at least two semiconductor chips to one another. This means that the at least two semiconductor chips are electrically conductively connected to a contact element. The contact element is designed, for example, as an anode. This means that the at least two optoelectronic semiconductor chips have a common anode and are electrically conductively connected to one another by this. The at least two electrically conductive connections are arranged, for example, spaced apart from one another in lateral directions and, for example, do not touch one another. This means that the at least two electrically conductive connections are not in direct contact with one another.

[0030] The optoelectronic component comprises at least two contact elements and at least two electrically conductive connections. According to at least one embodiment, the at least two electrically conductive connections each electrically connect one of the at least two contact elements and one of the at least two semiconductor chips. This means that each semiconductor chip is electrically connected to a respective contact element. The contact elements are designed, for example, as anodes. This means that each semiconductor chip is assigned, for example, to its own anode.

[0031] According to at least one embodiment, the at least one electrically conductive connection is arranged on a cover surface of the optoelectronic component. The cover surface is opposite a bottom surface of the optoelectronic component and is connected by a side surface. The at least one electrically conductive connection connects, for example, the cover surface of the at least one semiconductor chip to the cover surface of the at least one contact element and runs between the at least one semiconductor chip and the at least one contact element on the cover surface of the encapsulating body. The at least one electrically conductive connection is, for example, in direct and immediate contact with the cover surfaces of the at least one semiconductor chip, the at least one contact element, and the encapsulating body.

[0032] According to at least one embodiment, the at least one electrically conductive connection electrically connects the at least two semiconductor chips to one another. This means that the at least one electrically conductive connection only electrically connects the semiconductor chips to one another.

[0033] According to at least one embodiment, the at least one electrically conductive connection is arranged on a bottom surface of the optoelectronic component. The at least one electrically conductive connection connects, for example, the bottom surfaces of the semiconductor chips and runs between the semiconductor chips on the bottom surface of the encapsulating body. The electrically conductive connection is, for example, in direct and immediate contact with the bottom surfaces of the semiconductor bodies and the bottom surface of the encapsulating body.

[0034] A bottom surface of the at least one electrically conductive connection is freely accessible. A cover surface of the at least one electrically conductive connection, which is opposite the bottom surface and is connected via a side surface, is, for example, in direct contact with the bottom surface of the at least one semiconductor chip and the bottom surface of the encapsulating body. The bottom surface of the at least one electrically conductive connection, in contrast, is freely accessible at the bottom surface of the optoelectronic component and is, for example, not covered by the encapsulating body.

[0035] The bottom surface of the at least one electrically conductive connection is designed as a contact surface. Since the bottom surface of the at least one electrically conductive connection is freely accessible, it can be electrically contacted there, for example, thus forming at least one contact surface. Thus, for example, the semiconductor chips can be supplied with current from the bottom surface through the at least one electrically conductive connection.

[0036] A bottom surface of the at least one contact element is freely accessible and is designed as a contact surface. The semiconductor chips are, for example, only electrically conductively connected to one another at the bottom surface of the optoelectronic component. This means that the at least one contact element is free of the at least one electrically conductive connection and is thus freely accessible. The bottom surface of the at least one contact element can be electrically conductively contacted there, for example, and thus forms at least one contact surface.

[0037] If, for example, the bottom surface of the optoelectronic component does not have an electrically conductive connection, the bottom surface of the at least one optoelectronic semiconductor chip is also freely accessible and can be configured, for example, as a contact surface. This means that the bottom surface of the at least one optoelectronic semiconductor chip can be electrically conductively contacted there, for example, and thus forms at least one contact surface.

[0038] According to at least one embodiment of an optoelectronic component with at least two electrically conductive connections, the at least one electrically conductive connection is arranged on the bottom surface of the optoelectronic component, and at least one other electrically conductive connection is arranged on the top surface of the optoelectronic component. The at least one electrically conductive connection on the bottom surface of the optoelectronic component connects, for example, the at least two optoelectronic semiconductor chips. The at least one other electrically conductive connection on the top surface of the optoelectronic component electrically connects, for example, the at least two optoelectronic semiconductor chips and the contact element to one another.

[0039] The at least one electrically conductive connection on the bottom surface is, for example, electrically contacted at the bottom surface of the connection. This allows the radiation-emitting semiconductor chips to be supplied with current at their bottom surfaces. The contact element is, for example, also electrically contacted at the bottom surface of the contact element and is electrically connected to the at least one other electrically conductive connection on the top surface. This means that the radiation-emitting semiconductor chips can be supplied with current at their top surfaces through these connections.

[0040] According to at least one embodiment of an optoelectronic component with at least four electrically conductive connections, at least four optoelectronic semiconductor chips, and at least two contact elements, the at least two contact elements and the at least four semiconductor chips are connected to one another column-wise or row-wise by the at least two electrically conductive connections on the top surface of the optoelectronic component, and the at least two other electrically conductive connections connect the at least two semiconductor chips to one another row-wise or column-wise on the bottom surface of the optoelectronic component. The electrically conductive connections can, for example, each be contacted on the bottom surface of the optoelectronic component. Furthermore, the contact elements can, for example, each be contacted via their bottom surface, on the bottom surface of the optoelectronic component.This means that the at least four optoelectronic semiconductor chips with at least four contacts can be operated individually, for example in the manner of a passive matrix display.

[0041] The column- or row-wise electrically conductive connection of the semiconductor chips and the contact elements on the top surface of the optoelectronic component and the row- or column-wise electrically conductive connection of the semiconductor chips on the bottom surface of the optoelectronic component can be scaled as desired. This means that, for example, NxM radiation-emitting semiconductor chips are arranged in an NxM matrix, i.e., along N rows and M columns, where N and M are each a natural number greater than or equal to 2. This NxM matrix then has, for example, N+M contacts that can be used to supply current to the radiation-emitting semiconductor chips. The optoelectronic component then comprises, for example, N or M contact elements and N or M electrically conductive connections on the bottom surface of the optoelectronic component. Advantageously, each of the NxM radiation-emitting semiconductor chips can thus be controlled individually.

[0042] According to at least one embodiment, the at least one contact element comprises an integrated circuit. The integrated circuit is formed, for example, by an application-specific integrated circuit (ASIC). The integrated circuit comprises, for example, a control unit, an evaluation unit, and / or a control unit. The control unit and the evaluation unit each read and check, for example, the state of the at least one radiation-emitting semiconductor chip using, for example, the at least one radiation-detecting semiconductor chip. The control unit can, for example, control the at least two radiation-emitting semiconductor chips and, for example, switch the respective radiation-emitting semiconductor chips on or off.

[0043] Furthermore, a method for producing an optoelectronic component is specified. This method is suitable for producing an optoelectronic component described here. This means that an optoelectronic component described here can be produced using the described method or is produced using the described method. All features disclosed in connection with the optoelectronic component are therefore also disclosed in connection with the method, and vice versa.

[0044] The method includes the step of providing a temporary support. "Temporary" means, for example, that the temporary support is removed again in a subsequent process step. The support can be, for example, a plate made of a plastic material, a metal, a ceramic material, or a semiconductor material. The temporary support forms the mechanically stabilizing component in the steps in which no encapsulating body has yet been applied.

[0045] The method comprises the step of applying a film to a cover surface of the temporary carrier. The cover surface is arranged opposite the base surface, and the cover surface and the base surface are connected to one another by at least one side surface. The film is, for example, a double-sided adhesive film. This means that a base surface and a cover surface of the film form adhesive forces, for example at room temperature. If the film is heated, for example, the adhesive forces decrease. The base surface of the film is, for example, in direct and immediate contact with the cover surface of the temporary carrier. The adhesive forces of the base surface of the film firmly bond the film to the temporary carrier.

[0046] The method involves applying a plurality of semiconductor chips to the film. The plurality of semiconductor chips is applied, for example, to the top surface of the film. The plurality of semiconductor chips is applied to the film using a defined pressure force, for example. The bottom surfaces of the semiconductor chips are in direct and immediate contact with the top surface of the film. The adhesive forces of the film create a firm bond between the semiconductor chips and the top surface of the film and prevent them from slipping during subsequent process steps. The semiconductor chips are applied, for example, using a pick-and-place process.

[0047] The optoelectronic semiconductor chips can, for example, be arranged in a matrix-like manner, i.e., arranged along rows and columns, in a plane. This means that the optoelectronic semiconductor chips can, for example, be arranged at grid points of a regular grid. Furthermore, the optoelectronic semiconductor chips can, for example, be designed to generate light of different colors during operation.

[0048] The method comprises the step of applying a plurality of contact elements to the film. Contact elements can be arranged, for example, in a matrix-like manner, i.e., arranged along rows and columns, in a plane. This means that the contact elements can be arranged, for example, at grid points of a regular grid. The contact elements comprise, for example, or consist of an electrically conductive material. The electrically conductive material is, for example, a metal or a semiconductor material. The electrically conductive material contains or consists, for example, of silicon.

[0049] The method comprises the step of embedding the semiconductor chips and the contact elements with an encapsulating material. "Embedding" can mean that the semiconductor chips and the contact elements are in contact with the encapsulating material, are partially located within the encapsulating body, and / or are enclosed by the encapsulating body on at least part of its outer surface.

[0050] For example, a frame is applied to the film, which encloses the optoelectronic semiconductor chips and the contact elements in a frame-like manner. The term "frame-like" is not to be understood as restrictive with regard to the shape and shape of the frame. The frame can, for example, be rectangular, polygonal, round, or oval. The frame is applied to the film with a defined pressure force, for example. The adhesive forces of the film fasten the frame to the cover surface of the film and prevent the frame from slipping during subsequent process steps. The frame projects, for example, over the cover surfaces of the optoelectronic semiconductor chips and the contact elements on a side facing away from the film.

[0051] The frame is then filled, for example, with the encapsulation material so that the side surfaces of the optoelectronic semiconductor chips and the side surfaces of the contact elements are completely covered, for example, by the encapsulation material. The encapsulation material is in direct and immediate contact with the side surfaces of the semiconductor chips and the side surfaces of the contact elements. A cover surface and an opposite bottom surface of the encapsulation material are, for example, flush with the cover surfaces and bottom surfaces of the semiconductor chips and the cover surfaces and bottom surfaces of the contact elements. This means that the cover surfaces and bottom surfaces of the semiconductor chips and the contact elements are essentially free of encapsulation material. Essentially free means that small amounts of the encapsulation body are arranged on the cover surfaces and bottom surfaces of the semiconductor chips and the contact elements due to manufacturing tolerances.

[0052] Alternatively, it is possible that the side surfaces of the optoelectronic semiconductor chips and the contact elements are only covered by the encapsulation material up to a certain height.

[0053] The encapsulating material is formed, for example, from a matrix material. The matrix material is formed, for example, from a plastic such as silicone, an epoxy, or an epoxy hybrid material. A colorant such as carbon black or a pigment can be added to the plastic. Thus, the encapsulating material can appear black, white, or colored.

[0054] If the coating material is reflective, light-reflecting particles can be incorporated into the matrix material. The particles are formed, for example, with or contain at least one of the following materials: TiO2, BaSO4, ZnO, Al x O yThe wrapping material will be applied, for example, by injection molding, casting, printing, lamination, or the like.

[0055] For example, after the step of applying the encapsulating material, the encapsulating material is cured into an encapsulating body. The encapsulating body is the mechanically stabilizing component of the optoelectronic component. A UV-curing material, for example, is used as the encapsulating material. The advantage of using UV-curing material over a thermally curing material is, for example, that premature detachment of the film is not induced by heating. Alternatively, it is possible to use a thermally curing material for the encapsulating material.

[0056] For example, the top surfaces of the semiconductor chip and the contact elements remain free of the encapsulation body or are exposed. This means that the encapsulation material is either applied in such a way that the top surface of the semiconductor chips and the contact elements facing away from the carrier is not covered with the encapsulation material. Alternatively, the encapsulation body can be removed from the top surface of the semiconductor chips after the encapsulation material has been applied and cured. Removal can be achieved, for example, by grinding back the encapsulation body.

[0057] The method comprises the step of singulating optoelectronic components, each comprising at least two optoelectronic semiconductor chips configured to emit light of different colors during operation. The arrangement of optoelectronic semiconductor chips, contact elements, encapsulating bodies, and, if present, temporary carriers and foils is singulated into optoelectronic components, for example, by cuts transversely or perpendicularly to the top surface of the arrangement. The cuts are created, for example, by a laser or a saw blade.

[0058] According to at least one embodiment of the method, the temporary carrier is removed before the singulation step. The film, for example, only exhibits adhesive forces at room temperature. Heating, for example, causes the film to lose its adhesive forces and thus its adhesive effect. This means that, for example, heating causes the assembly comprising the semiconductor chips, the contact elements, and the encapsulating body to be detached from the film. This means that the temporary carrier is also removed from the assembly.

[0059] According to at least one embodiment of the method, after the embedding step, a plurality of electrically conductive connections are applied to a cover surface of the optoelectronic component. The electrically conductive connections are applied, for example, in places to the cover surfaces of the semiconductor chips, the contact elements, and the cover surface of the encapsulating body. The electrically conductive connections are formed, for example, with a metal or an electrically conductive adhesive. Furthermore, the electrical connection can comprise a combination of several metals.

[0060] The electrically conductive connections have a thickness that can be, for example, between at least 1 µm and at most 15 µm. The thickness of the electrically conductive connections is essentially constant over the entire extent of the electrically conductive connection, within the manufacturing tolerance. The electrically conductive connections have a width that is large compared to the thickness of the electrically conductive connections. The width of the electrically conductive connections can, for example, be a factor of 10, 100, or 1000 greater than the thickness of the electrically conductive connections.

[0061] The electrically conductive connections can be created, for example, by sputtering and / or deposition, for example electroless or galvanic deposition.

[0062] According to at least one embodiment of the method, after the temporary carrier has been removed, a plurality of electrically conductive connections are applied to a bottom surface of the optoelectronic component. The electrically conductive connections are applied, for example, in places on the bottom surfaces of the semiconductor chips and on the bottom surface of the encapsulating body. The electrically conductive connections can be created, for example, by sputtering and / or deposition, for example, electroless or galvanic deposition.

[0063] In the following, the optoelectronic components described here as well as the method described here are explained in more detail using exemplary embodiments and the associated figures.

[0064] They show: Fig. 1A, Fig. 1B, Fig. 1C, Fig. 2A and Fig. 2B schematic sectional views in plan view of embodiments of an optoelectronic component described here, wherein only the Fig. 2A and Fig. 2B refer to a component having all the features of claim 1, Fig. 3A, Fig. 3B, Fig. 3C, Fig. 3D and Fig. 3E schematic sectional representations of method steps of an embodiment of a method described here for producing an optoelectronic component.

[0065] Identical, similar, or functionally identical elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or clarity.

[0066] The schematic sectional views in plan view of the Fig. 1A, Fig. 1B and Fig. 1C show embodiments of an optoelectronic semiconductor chip described here.

[0067] According to Fig. 1A, the optoelectronic component 1 comprises three semiconductor chips, which are, for example, radiation-emitting semiconductor chips R, G, B, and a contact element 2. The radiation-emitting semiconductor chips R, G, B are configured to generate light of different colors during operation. One radiation-emitting semiconductor chip emits red light R, another radiation-emitting semiconductor chip emits green light G, and another radiation-emitting semiconductor chip emits blue light B. The radiation-emitting semiconductor chips R, G, B are arranged laterally spaced apart in a plane in a triangle. In addition, the contact element 2 is arranged laterally spaced apart in a plane from the radiation-emitting semiconductor chips R, G, B.

[0068] An encapsulating body 4 completely surrounds the side surfaces of the radiation-emitting semiconductor chips R, G, B and the side surfaces of the contact element 2. The top surface and the bottom surface of the radiation-emitting semiconductor chips R, G, B and the contact element 2 are flush with the top surface and the bottom surface of the encapsulating body 4.

[0069] Each radiation-emitting semiconductor chip R, G, B is connected to the contact element 2 via an electrically conductive connection 3 on the top surface of the optoelectronic component 1a.

[0070] Contact element 2 is designed as an anode and can be contacted via its bottom surface. Furthermore, the radiation-emitting semiconductor chips R, G, and B can each be contacted via their bottom surface, forming a cathode. This means that optoelectronic component 1 can be supplied with current via a common anode and three different cathodes.

[0071] According to Fig. 1B, the radiation-emitting semiconductor chips R, G, B are arranged laterally spaced in a plane along a row. The other features are analogous to the features according to Fig. 1A described.

[0072] According to Fig. 1C and analogous to Fig. 1B, the radiation-emitting semiconductor chips R, G, B are arranged along a row. The optoelectronic component 1, in contrast to Fig. 1A and Fig. 1B does not have a common contact element 2, but rather comprises three contact elements 2 arranged laterally spaced apart in a plane along a row. Each radiation-emitting semiconductor chip R, G, B is connected to one contact element 2 via an electrically conductive connection 3 on the top surface of the optoelectronic component 1a.

[0073] The contact elements 2 are designed as anodes and can be contacted via the bottom surface of the respective contact element. Furthermore, the radiation-emitting semiconductor chips R, G, B can each be contacted via their bottom surface and each form a cathode. This means that the optoelectronic component 1 can be supplied with current via three different anodes and three different cathodes. Here, each radiation-emitting semiconductor chip R, G, B is assigned a cathode and an anode.

[0074] The schematic sectional views of the Fig. 2A and Fig. 2B show an embodiment of a radiation-emitting component described here.

[0075] According to Fig. Figure 2A shows the surface of the optoelectronic component 1a. The optoelectronic component 1 comprises nine radiation-emitting semiconductor chips R, G, B and three contact elements 2. The radiation-emitting semiconductor chips R, G, B are arranged in a matrix, i.e., arranged along rows and columns, in a plane. This means that the radiation-emitting semiconductor chips R, G, B are arranged at grid points of a regular grid. Furthermore, the contact elements 2 are arranged laterally spaced from the outer radiation-emitting semiconductor chips R, G, B in a plane of radiation-emitting semiconductor chips R, G, B.

[0076] The radiation-emitting semiconductor chips R, G, B, which are arranged in a common column, are each connected to one another by a contact element 2 via an electrically conductive connection 3 on the top surface of the optoelectronic component 1a. The electrically conductive connections 3 thus connect three radiation-emitting semiconductor chips R, G, B in a common column and each connect one contact element 2 to one another.

[0077] According to Fig. 2B, the radiation-emitting semiconductor chips R, G, B, which are arranged in a common row, are each connected to one another via an electrically conductive connection 3 on the bottom surface of the optoelectronic component 1b. The electrically conductive connection 3 thus connects three radiation-emitting semiconductor chips R, G, B, each in a row.

[0078] The electrically conductive connections can each be contacted on the bottom surface of the optoelectronic component 1b. In addition, the contact elements 2 can each be contacted via their bottom surface, on the bottom surface of the optoelectronic component 1b. This means that the nine radiation-emitting semiconductor chips R, G, B with six contacts can be operated individually. This technology can be scaled as required. This means that NxM radiation-emitting semiconductor chips R, G, B can be arranged in an NxM matrix, where N and M each represent a natural number greater than or equal to 2. This NxM matrix is ​​then supplied with current via N+M contacts, whereby each of the NxM radiation-emitting semiconductor chips R, G, B can be controlled individually. The optoelectronic component 1 comprises N or M contact elements 3 and N or M electrically conductive connections 3 on the bottom surface of the optoelectronic component 1b.

[0079] In connection with the Fig. 3A, Fig. 3B, Fig. 3C, Fig. 3D and Fig. 3E shows an embodiment of a manufacturing method for radiation-emitting components described here.

[0080] According to Fig. 3A, a temporary carrier 5 is provided, onto which a film 6 is applied to the cover surface of the temporary carrier. The film 6 is a double-sided adhesive film. The bottom surface and the cover surface of the film 6 form adhesive forces, for example, at room temperature. If the film 6 is heated, for example, the adhesive forces decrease. The bottom surface of the film 6 is in direct and immediate contact with the cover surface of the temporary carrier 6. Due to the adhesive forces of the bottom surface of the film 6, the film is mechanically firmly bonded to the temporary carrier 5.

[0081] Three radiation-emitting semiconductor chips R, G, B and a contact element 2 are applied to the film 6. The radiation-emitting semiconductor chips R, G, B and the contact element 2 are applied to the film 6 with a defined pressing force. The adhesive forces of the film 6 secure the radiation-emitting semiconductor chips R, G, B and the contact element 2 to the cover surface of the film 6 and prevent the radiation-emitting semiconductor chips R, G, B and the contact element 2 from slipping during subsequent process steps.

[0082] In Fig. Figure 3B is a schematic sectional view of a side view along section S1 in Fig. 3A. The top surfaces of the radiation-emitting semiconductor chips R, G, B and the contact element 2 lie in a common plane. This means that the radiation-emitting semiconductor chips R, G, B and the contact element 2 have the same heights. Furthermore, the elements are firmly attached to the film 6.

[0083] According to Fig. 3C, in a further process step, the encapsulating material 7 is applied to the cover surface of the film 6. The encapsulating material 7 completely covers the side surfaces of the radiation-emitting semiconductor chips R, G, B and the contact element 2. After the step of applying the encapsulating material 7, the encapsulating material 7 is cured to form an encapsulating body 4.

[0084] In addition, an electrically conductive connection 3 is applied to the top surface of the optoelectronic component 1a to connect the radiation-emitting semiconductor chips R, G, B and the contact element 2. The electrically conductive connection 3 is arranged on the encapsulating body 4 between the radiation-emitting semiconductor chips R, G, B and between the radiation-emitting semiconductor chip G and the contact element 2.

[0085] In the Fig. 3D and Fig. 3E are schematic sectional views of a side view along section S2 in Fig. 3C.

[0086] According to Fig. 3D, the cover surface of the encapsulating material 7 is flush with the cover surfaces of the radiation-emitting semiconductor chips R, G, B and the contact element 2.

[0087] According to Fig.3E, the temporary carrier 5 and the film 6 are removed before or after the separation. Heating causes the film 6 to lose its adhesive strength and thus its adhesive effect. This means that heating causes the assembly comprising the radiation-emitting semiconductor chips R, G, B, the contact element 2, and the encapsulating body 4 to be detached from the film 6. This also means that the temporary carrier 5 is removed from the assembly. List of reference symbols 1 optoelectronic component 1a Cover surface of optoelectronic component 1b Bottom surface of optoelectronic component R optoelectronic semiconductor chip, red light G optoelectronic semiconductor chip, green light B optoelectronic semiconductor chip, blue light 2 contact element 3 Connection 4 Enclosure body 5 temporary carriers 6 Slide 7 Wrapping material S1 Section 1 S2 Section 2

Claims

[1] Optoelectronic component (1) with - at least four optoelectronic semiconductor chips (R, G, B) which are designed to emit or detect light of different colours during operation, - at least two contact elements (2) for electrically contacting at least one of the optoelectronic semiconductor chips (R, G, B), - at least two electrically conductive connections (3) arranged on a cover surface of the optoelectronic component (1a), - at least two further electrically conductive connections (3) arranged on a bottom surface of the optoelectronic component (1b), and - a covering body (4) which is electrically insulating, wherein - the optoelectronic semiconductor chips (R, G, B) and the contact elements (2) are arranged along rows and columns, - the optoelectronic semiconductor chips (R, G, B) and the contact elements (2) are embedded in the encapsulating body (4), - the electrically conductive connections (3) are arranged in places on the enclosing body (4), - the further electrically conductive connections (3) are arranged in places on the enveloping body (4), - the optoelectronic semiconductor chips (R, G, B), which are arranged in a common column, are each electrically connected to one of the contact elements (2) by one of the electrically conductive connections (3), - the optoelectronic semiconductor chips (R, G, B), which are arranged in a common row, are electrically connected to one another by one of the further electrically conductive connections (3), - a bottom surface of at least one of the contact elements (2) is freely accessible and is designed as a contact surface, and - a bottom surface of at least one of the further electrically conductive connections (3) is freely accessible and is designed as a further contact surface. [2] Optoelectronic component (1) according to the preceding claim, wherein at least one of the contact elements (2) comprises an integrated circuit. [3] Method for producing an optoelectronic component (1) comprising the following steps: - Providing a temporary support (5), - applying a film (6) to a cover surface of the temporary carrier (5), - applying a plurality of optoelectronic semiconductor chips (R,G,B) to the film (6), - applying a plurality of contact elements (2) to the film (6), - embedding the optoelectronic semiconductor chips (R, G, B) and the contact elements (2) with a coating material (7), - Separating to form optoelectronic components (1), each comprising at least four optoelectronic semiconductor chips (R, G, B) which are designed to emit or detect light of different colors during operation, and comprising at least two contact elements (2), wherein - at least two electrically conductive connections (3) of an optoelectronic component (1) are arranged on a cover surface of the optoelectronic component (1a), - at least two further electrically conductive connections (3) of an optoelectronic component (1) are arranged on a bottom surface of the optoelectronic component (1b), - the optoelectronic semiconductor chips (R, G, B) and the contact elements (2) of an optoelectronic component (1) are arranged along rows and columns, and - the optoelectronic semiconductor chips (R, G, B) of an optoelectronic component (1) are arranged in a common column, are electrically connected to one another by one of the contact elements (2) in each case by one of the electrically conductive connections (3), - the optoelectronic semiconductor chips (R, G, B) of an optoelectronic component (1) are arranged in a common row and are electrically connected to one another by one of the further electrically conductive connections (3), - a bottom surface of at least one of the contact elements (2) is freely accessible and is designed as a contact surface, and - a bottom surface of at least one of the further electrically conductive connections (3) is freely accessible and is designed as a further contact surface. [4] Method according to the preceding claim, wherein the temporary carrier (5) is removed before the singulating step. [5] Method according to the preceding claim 3, wherein the temporary carrier (5) is removed after the singulating step. [6] Method according to one of the preceding claims 3 to 5, wherein after the embedding step, the at least two electrically conductive connections (3) are applied to the cover surface of the optoelectronic component (1a). [7] Method according to one of the preceding claims 4 to 6, wherein after the removal of the temporary carrier (5) the at least two further electrically conductive connections (3) are applied to the bottom surface of the optoelectronic component (1b).

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