Pressure sensor components and methods for manufacturing pressure sensor components

Abstract

A pressure sensor component (2000), comprising: a semiconductor die (120) of the pressure sensor component (2000); a cavity; and a bond wire (110) of the pressure sensor component (2000); wherein a maximum vertical distance (2012) between a part of the bond wire (110) and the semiconductor die (120) is greater than a minimum vertical distance (2014) between the semiconductor die (120) and a surface of a gel covering the semiconductor die, wherein the cavity is located adjacent to the gel covering the semiconductor die (120), wherein at least a section of the bond wire (110) is located inside the cavity, wherein at least a transverse section (CS) of the bond wire (110) extends over the semiconductor die (120), and wherein a length of the transverse section (CS) is longer than half a length (SD) of the semiconductor die (120).

Description

Technical area

[0001] Examples relate to concepts for protecting against the effects of electrostatic discharge (ESD) on a pressure sensor device and applications thereto, and in particular to pressure sensor devices and methods of manufacturing pressure sensor devices. background

[0002] Pressure sensors have a pressure port, an opening in the housing through which pressure on the sensing element of the pressure sensor can be measured. The pressure port allows the sensor to measure air pressure, for example, in the door cavity of a car. A volume of air is directly exposed to the sensor surface.

[0003] Due to the pressure port in the first (and second) level housing, this sensor type is particularly susceptible to this type of air discharge during ESD (testing). High electric fields are present within the air fill of the pressure port during ESD (testing). These fields are capable of causing gas discharges (corona) within this air fill, causing secondary effects such as the generation of free charges (ions and electrons) in the air fill, free charge drift within a fully isolated system, very sharp and unpredictable electric field transients within the air fill, and charging of the internal cavity walls and the sensor surface with an uncontrolled charge distribution.

[0004] The documents US 7145253 B1, DE 693 02 521 T2, US5357673A, US 2001 / 0 028 072 A1, US 2003 / 0 214 026 A1, US 2015 / 0 221 572 A1 and US 2015 / 0 369 682 A1 describe known semiconductor components.

[0005] It may be desirable to obtain better ESD protection for pressure sensor components. Summary

[0006] There may be a need to provide pressure sensor device concepts that improve ESD robustness.

[0007] Such a need may be met by the subject matter of the claims.

[0008] Some embodiments relate to a pressure sensor device comprising a semiconductor die of the pressure sensor device, a cavity, and a bond wire of the pressure sensor device. A maximum vertical distance between a portion of the bond wire and the semiconductor die is greater than a minimum vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die. The cavity is disposed adjacent to the gel covering the semiconductor die, and at least a portion of the bond wire is disposed within the cavity. At least a traversing portion of the bond wire extends across the semiconductor die, and a length of the traversing portion is longer than half a length of the semiconductor die.

[0009] Some embodiments relate to a pressure sensor device. The pressure sensor device comprises a semiconductor die of the pressure sensor device. The pressure sensor device comprises a bond wire of the pressure sensor device. At least one traversing portion of the bond wire extends over the semiconductor die. A length of the traversing portion is longer than half a length of the semiconductor die, wherein the traversing portion is routed over a sensor region of the pressure sensor device.

[0010] Some embodiments relate to a pressure sensor device. The pressure sensor device comprises a semiconductor die of the pressure sensor device. The pressure sensor device comprises a bond wire of the pressure sensor device. A first end of the bond wire is bonded to a bond pad of the semiconductor die. A second end of the bond wire is an open end. At least one traversing portion of the bond wire extends across the semiconductor die, and a length of the traversing portion is longer than half a length of the semiconductor die, wherein the traversing portion is routed across a sensor region of the pressure sensor device.

[0011] Some embodiments relate to a method for manufacturing a pressure sensor device. The method comprises providing a semiconductor die of the pressure sensor device in a cavity of the pressure sensor device. The method comprises forming a bond wire of the pressure sensor device, wherein a maximum vertical distance between a portion of the bond wire and the semiconductor die is greater than a minimum vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die, wherein the cavity is arranged adjacent to the gel covering the semiconductor die, wherein at least a portion of the bond wire is arranged within the cavity, wherein at least a traversing portion of the bond wire extends across the semiconductor die, and wherein a length of the traversing portion is longer than half a length of the semiconductor die.

[0012] Some embodiments relate to a method for manufacturing a pressure sensor device. The method includes providing a semiconductor die of the pressure sensor device. The method includes forming a bond wire of the pressure sensor device. A first end of the bond wire is bonded to a bond pad of the semiconductor die, and a second end of the bond wire is an open end. At least one traversing portion of the bond wire extends across the semiconductor die, and a length of the traversing portion is longer than half a dimension of the semiconductor die. Short description of the characters

[0013] Some examples of devices and / or methods are described below solely by way of example and with reference to the accompanying figures, in which Fig. 1 shows a schematic representation of a top side of a pressure sensor device comprising a bond wire with a traversing section over the semiconductor die; Fig. 2 shows a schematic representation of a cross section of the pressure sensor component comprising a bond wire with an open end. Fig. 3 shows a flowchart of a method for manufacturing a pressure sensor device; Fig. 4 shows a flowchart of a method for manufacturing a pressure sensor device and forming a bond wire; Fig. 5 shows a schematic representation of a cross-section of a pressure sensor device with one end of the bond wire attached to a package structure and the other end of the bond wire attached to a semiconductor die; Fig. 6 is a schematic plan view of a top side of the pressure sensor component of Fig. 5 shows; Fig. 7 is another schematic plan view of a top side of the pressure sensor device of Fig. 5 shows; Fig. 8 shows a schematic representation of a cross-section of a pressure sensor device with one end of a bond wire attached to a package structure and the other end of the bond wire also attached to the package structure; Fig. 9 is a schematic plan view of the pressure sensor component of Fig. 8 shows; Fig. 10 shows a schematic representation of a cross-section of a pressure sensor device with a first end of a bond wire on a semiconductor device, an intermediate end of the bond wire on the semiconductor device and a second end of the bond wire on a package structure; Fig. 11 is a schematic representation of a top view of the pressure sensor component of Fig. 10 shows; Fig. 12 another schematic representation of a top view of the pressure sensor component of Fig. 10 shows; Fig. 13 shows a schematic representation of a top view of a pressure sensor device with bond wires placed on a ground pad of a package structure on one side and an open end on the other side; Fig. 14 shows a schematic representation of a top view of a pressure sensor device with bond wires extending from edges of a semiconductor die to respective other edges of the semiconductor die; Fig. 15 shows a schematic representation of a bond wire in stud bump form; Fig. 16 shows a schematic representation of a stud bump bond wire with a slope; Fig. Figure 17 shows a schematic representation of an electrostatic discharge test on automotive pressure sensors; Fig. 18 shows a schematic diagram of a test system overview of a discharge test on automotive pressure sensors; Fig. 19 shows a schematic representation of a material stack in a pressure sensor module; Fig. 20 shows a schematic representation of a cross section of a pressure sensor device; Fig. 21 shows a schematic representation of a cross-section of a pressure sensor device comprising two high loop bond wires; Fig. 22a schematic representation of a top side of the pressure sensor component of Fig. 21 shows; Fig. Figure 23 shows a schematic representation of a cross-section of a pressure sensor device and a spherical equipotential surface; Fig. 24 shows a schematic representation of a spherical equipotential surface reaching the high bond wires; and Fig. 25 shows a flow diagram of a method for manufacturing a pressure sensor device. Detailed description

[0014] Various examples will now be described in more detail with reference to the accompanying drawings, which illustrate some examples. In the figures, the thicknesses of lines, layers, and / or regions may be exaggerated for clarity.

[0015] It is understood that when an element is referred to as being "connected" or "coupled" to another element, the elements may be connected or coupled directly or through one or more intermediate elements. When two elements A and B are combined using an "or," this should be understood to disclose all possible combinations, i.e., only A, only B, and both A and B. An alternative formulation for the same combinations is "at least one of A and B." The same applies to combinations of more than two elements.

[0016] The terminology used here to describe specific examples is not intended to be limiting for further examples. Where a singular form, such as "a," "an," and "the," is used, and the use of only a single element is neither explicitly nor implicitly defined as mandatory, further examples may also use plural elements to implement the same function. Where a function is subsequently described as being implemented using multiple elements, further examples may implement the same function using a single element or a single processing entity.It is further understood that the terms "comprises", "comprising", "comprises" and / or "having" when used specify the presence of the specified features, integers, steps, operations, processes, elements and / or components thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, processes, elements, components and / or group thereof.

[0017] Unless otherwise defined, all terms (including technical and scientific terms) are used herein in their ordinary meaning in the field to which examples belong.

[0018] Fig. 1 shows a schematic representation of a top side of a pressure sensor device 100 according to an embodiment. The pressure sensor device 100 includes a semiconductor die 120 of the pressure sensor device 100. The pressure sensor device 100 includes a bonding wire 110 of the pressure sensor device 100. At least one crossing portion CS of the bonding wire 110 extends over the semiconductor die 120. A length of the crossing portion CS is longer than half (or more than 70%) of a dimension SD of the semiconductor die 120.

[0019] Due to the crossing section CS across the semiconductor die 110, the electrical charge can be conducted along the bond wire. This can reduce or prevent electrical discharge through unwanted parts of the semiconductor die. In this way, the ESD robustness of the semiconductor die 110 can be improved.

[0020] For example, the crossing section CS of the (first) bond wire 110 is a section of the bond wire that lies in the region of the semiconductor die 120 in a top view of the semiconductor die 120. For example, the crossing section CS of the bond wire 110 is a section of the bond wire that overlaps the region of the semiconductor die 120. For example, the crossing section CS of the bond wire 110 is a section of the bond wire that is arranged above the semiconductor die 110 within a region that is laterally bounded by the edges of the semiconductor die 120 (e.g., within a cuboid comprising sidewalls that start at the edges of the semiconductor die and extend vertically).For example, when a bond wire extends from outside a lateral region of the semiconductor die to a bond pad of the semiconductor die, the traversing portion CP of the bond wire 110 is the portion of the bond wire 110 that extends from the bond pad of the semiconductor die 120 to a point vertically above an edge of the semiconductor die 120.

[0021] The dimension SD of the semiconductor die 120 may be the length of an edge or the longest edge of the semiconductor die 120. For example, the semiconductor die 120 may have a rectangular shape, and the dimension SD of the semiconductor die 120 may be the length of the longer side (or the shorter side) of the rectangle.

[0022] For example, the length of the transverse section CS is greater than the dimension SD of the semiconductor die 120. The dimension SD can be a lateral length. The dimension SD can be a length or a width of the semiconductor die.

[0023] For example, the length of the crossing section CS is equal to or less than a diagonal dimension DD of the semiconductor die 120. The crossing section CS may be greater than the dimension SD of the semiconductor die 120. The crossing section CS may be less than the diagonal dimension DD of the semiconductor die 120.

[0024] Due to the length of the crossing section CS, the electrical charges can be kept away from the semiconductor die 120.

[0025] For example, the bond pad is a reference voltage pad (e.g., ground pad) to enable connection to a reference voltage (e.g., ground). The semiconductor die 120 may include one or more bond pads that are ground pads. The pressure sensor device 100 may include one or more bond wires 110 to improve ESD robustness. The one or more bond wires 110 may be connected to a respective ground pad, or several bond wires may be connected to the same ground pad.

[0026] For example, a maximum vertical distance between the bond wire 110 and the semiconductor die 120 is greater than 50 µm (or greater than 100 µm, or greater than 200 µm) and / or less than 1 mm (or less than 700 µm, or less than 500 µm). For example, the bond wire 110 has a diameter greater than 10 µm (or greater than 30 µm, greater than 80 µm) and less than 300 µm (or less than 100 µm, or less than 70 µm).

[0027] For example, the semiconductor die 120 includes a bond pad, wherein one end of the bond wire 110 is bonded to the bond pad of the semiconductor die 120.

[0028] For example, the semiconductor die 120 includes another (second) bond pad, with the bond wire 110 terminating on the other bond pad. In this example, the entire bond wire 100 extends across the semiconductor die such that the transverse portion CP of the bond wire is the entire bond wire 110. The (first) bond pad of the semiconductor die 120 and the other (second) bond pad of the semiconductor die 120 may be arranged at least half the dimension of the semiconductor die 120 away on opposite edges of the semiconductor die. The first bond pad of the semiconductor die 120 may be spaced from the second bond pad by at least half the dimension SD of the semiconductor die 120. The first bond pad of the semiconductor die 120 may be spaced from the second bond pad by less than one diagonal dimension DD of the semiconductor die 120.The first and second bond pads may be arranged at edges of the semiconductor die 120. The first and second bond pads may be arranged at corners of the semiconductor die 120.

[0029] For example, pressure sensor device 100 includes a package structure (e.g., comprising a lead frame or a package support substrate). The package structure may have a bond pad, and one end of bond wire 110 may be bonded to the bond pad of the package structure. For example, bond wire 110 starts at a bond pad of semiconductor die 120 and ends at the bond pad of the package structure.

[0030] For example, an intermediate contact portion of the bond wire 110 may be bonded to another bond pad of the semiconductor die 120. The distance between the two bond pads on the semiconductor die 120 may be greater than the dimension SD of the semiconductor die 120. The distance between the two bond pads on the semiconductor die 120 may be smaller than the diagonal dimension DD of the semiconductor die 120. A distance between the bond pad of the semiconductor die 120 to the bond pad of the package structure may be greater than a distance between the another bond pad of the semiconductor die 120 and the bond pad of the package structure.

[0031] For example, at least a part of the crossing section CS of the bonding wire 110 is arranged between the bonding pad of the semiconductor die 120 and the intermediate end of the bonding wire 110 (the other bonding pad).

[0032] For example, the bonding pad of the semiconductor die is arranged on a remote side of the semiconductor die 120 with respect to the bonding pad of the package structure such that the crossing portion CS of the bond wire 110 extends over at least half the dimension of the semiconductor die 120.

[0033] For example, the traversing section CS of the bond wire 110 extends across the semiconductor die 120 in a traversing direction. For example, the traversing section CS of the bond wire 110 extends across the semiconductor die 120 parallel to a side of the semiconductor die. The traversing section CS of the bond wire 110 may extend across a central region of the semiconductor die. The central region may be defined by an area around a center of the semiconductor die 120. The area around the center may be less than 50% (or less than 30%, or less than 20%) of the square dimension of the semiconductor die 120.

[0034] For example, the semiconductor die 120 includes a membrane structure. The membrane structure can be adapted to be deformed by an existing gas pressure. The transverse section CS of the bond wire 110 can extend over the membrane structure. The membrane structure can be arranged in a center of the semiconductor die. The membrane structure can be arranged in the central region of the semiconductor die. The membrane structure can form the central region.

[0035] For example, the pressure sensor device 100 includes the first bond wire 110 and a second bond wire. A first end A of the bond wire may be bonded 120 to a bond pad of the semiconductor die. The second end B of the second bond wire may be an open end (e.g., see Fig. 14). The first bond wire 110 of the pressure sensor device 100 and the second bond wire may be bonded to the same bond pad or to different bond pads of the semiconductor die 120. The first bond wire 110 and the second bond wire may be arranged at least half a dimension SD of the semiconductor die 120 apart. The first bond wire 110 and the second bond wire may be arranged less than a diagonal dimension DD of the semiconductor die 120 apart. The first bond wire 110 and / or the second bond wire may be arranged on bond pads at respective edges of the semiconductor die 120. The first bond wire 110 and / or the second bond wire may be arranged on bond pads at respective corners of the semiconductor die 120.

[0036] For example, the pressure sensor component 100 includes additional bond wires. The additional bond wires may be arranged and adapted to connect bond pads (e.g., input and / or output bond pads and / or power supply pads) of the semiconductor die 120 to bond pads of the package structure.

[0037] For example, the pressure sensor component includes another bond wire 110 bonded to a bond pad of the package structure and having an open end.

[0038] For example, pressure sensor device 100 comprises a gel. At least a portion of semiconductor die 120 or the entire semiconductor die 120 may be covered by the gel. The gel may be a viscoelastic material (e.g., polydimethylsiloxane). The gel may have a viscosity of less than 10 Pa*s. The gel may have a viscosity of greater than 10 Pa*s. The gel may have a viscosity of greater than 100 Pa*s. The gel may have a viscosity of greater than 1 Pa*s.

[0039] The bonding wire 110 may extend at least partially through the gel (e.g., see Fig. 5). For example, the transverse section is outside or inside the gel.

[0040] For example, the bond wire 110 is covered by the gel. The bond wire 110 may be completely covered by the gel. A minimum distance between the bond wire 110 and a surface of the gel may be less than 10 µm (or less than 5 µm, or less than 1 µm).

[0041] For example, the pressure sensor device 100 includes a cavity. The cavity may have a maximum vertical extension of more than 100 µm (or more than 300 µm, or more than 500 µm, or more than 1 mm) and / or less than 5 mm (or less than 2 mm, or less than 1 mm) and / or a lateral extension greater than a dimension of the semiconductor die 120. For example, the cavity is disposed adjacent to the gel. At least a portion of the traversing section CS of the bond wire 110 is disposed within the cavity. For example, at least a portion of the traversing section CS of the bond wire 110 is disposed outside the gel.

[0042] For example, a minimum thickness of the gel over the semiconductor die 120 is smaller than a maximum distance between the bond wire 110 and a surface of the gel. This way, an electrical discharge can strike the bond wire well before reaching the gel or the semiconductor die 110.

[0043] For example, a ratio between a length of all sections of the bonding wire (110) arranged outside the gel and a length of all sections of the bonding wire (110) arranged inside the gel is greater than 2:1 (or greater than 3:1, greater than 4:1, greater than 5:1, greater than 6:1, or greater than 7:1).

[0044] For example, the semiconductor die 120 is a microelectromechanical system, MEMS.

[0045] The semiconductor die may include a semiconductor substrate and a wiring layer stack disposed on the semiconductor substrate. The semiconductor die may, for example, include a silicon substrate. Alternatively, the semiconductor substrate may be a wide-bandgap semiconductor substrate with a bandgap larger than the bandgap of silicon (1.1 eV). For example, the semiconductor substrate may be a silicon carbide (SiC)-based semiconductor substrate, a gallium arsenide (GaAs)-based semiconductor substrate, or a gallium nitride (GaN)-based semiconductor substrate.

[0046] For example, the vertical direction and a vertical dimension or thicknesses of layers may be measured orthogonal to a front surface of the semiconductor die or semiconductor substrate of the semiconductor die, and a lateral direction and lateral dimensions may be measured parallel to the front surface of the semiconductor die or semiconductor substrate of the semiconductor die.

[0047] The front side (or front surface) of the semiconductor die or semiconductor substrate may be the side (or surface) used to implement more sophisticated and complex structures (e.g., the membrane of the pressure sensor device may be implemented on the front side) than on the back side of the semiconductor die or semiconductor substrate, since the process parameters (e.g., temperature) and handling for the back side may be restricted if, for example, structures are already formed on one side of the semiconductor die or semiconductor substrate.

[0048] Fig. Figure 2 shows a schematic representation of a cross-section of a pressure sensor component 200 according to one embodiment. The pressure sensor component 200 includes a semiconductor die 120 of the pressure sensor component 200. The pressure sensor component 200 includes a bond wire 110 of the pressure sensor component 200. A first end A of the bond wire 110 is bonded to a bond pad of the semiconductor die 120. A second end B of the bond wire 110 is an open end.

[0049] For example, the open-ended bond wire can act as a lightning rod when an ESD event occurs. The ESD charge can be at least partially dissipated by the bond wire. In this way, the ESD robustness of the pressure sensor device 200 can be improved.

[0050] The bond wire 110 has an open end, so that the bond wire 110 is bonded to a pad, for example, only at one end. An open end may be an end of the bond wire that is not bonded to a pad. The open end of the bond wire 110 may be arranged in a cavity above the semiconductor die 120 or in a gel that covers at least a portion of the semiconductor die 120, for example. The bond wire 110 may be in the form of a stud bump.

[0051] The bond pad may be a ground pad of the semiconductor die 120. The pressure sensor device 200 may include a package structure. The package structure may include a lead frame. The lead frame may include one or more ground pads. The one or more ground pads may be electrically connected to the ground bond pad of the semiconductor die 120.

[0052] For example, a length of the bonding wire 110 of the pressure sensor device 200 is less than 1 mm (or less than 700 µm) and longer than 200 µm (or longer than 500 µm).

[0053] For example, the bond wire 110 of the pressure sensor device 200 has a maximum inclination of 40 degrees. The maximum inclination may be defined by an angle between a direction of the bond wire 110 and a normal direction with respect to a front side of the semiconductor die.

[0054] For example, the bond wire is a first bond wire 110. For example, the pressure sensor device 200 includes a second bond wire. A first end A of the second bond wire may be bonded 120 to a bond pad of the semiconductor die. A second end B of the bond wire may be an open end. The first bond wire 110 of the pressure sensor device 200 and the second bond wire may be arranged on different bond pads of the semiconductor die 120. The first bond wire 110 and the second bond wire may be arranged at least half a dimension SD of the semiconductor die 120 apart. The first bond wire 110 and the second bond wire may be arranged at least one dimension SD of the semiconductor die 120 apart. The first bond wire 110 and the second bond wire may be arranged less than one diagonal dimension DD of the semiconductor die 120 apart.

[0055] For example, pressure sensor device 200 includes another bond wire. The other or further bond wire may extend vertically from the package structure and have an open end. Pressure sensor device 200 may include a plurality of further bond wires. The further bond wire may be arranged around semiconductor die 120. The further bond wires may each be arranged near edges of semiconductor die 120 on the package structure.

[0056] For example, pressure sensor device 200 comprises a gel. At least a portion of semiconductor die 120 may be covered by the gel. Bond wire 110 may extend at least partially through the gel. For example, at least half of a length of bond wire 110 extends outside the gel. For example, bond wire 110 may be at least partially covered by the gel.

[0057] For example, the bond wire 110 can be completely covered by the gel. For example, a minimum distance from the bond wire 110 to a surface of the gel is less than 10 µm.

[0058] For example, a cavity may be disposed adjacent to the gel. At least a portion of the bond wire 110 may extend within or into the cavity.

[0059] For example, a thickness of the gel may be smaller than a depth of the cavity.

[0060] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. The embodiment shown in Figure 2 may comprise one or more optional additional features corresponding to one or more aspects described in connection with the proposed concept or one or more of the above (e.g. Fig. 1) or below (e.g. Fig. 3-25) described embodiments are mentioned.

[0061] Fig. 3 shows a flowchart of a method for manufacturing a pressure sensor device according to an embodiment. The method includes providing 310 a semiconductor die of the pressure sensor device. The method includes forming 320 a bond wire of the pressure sensor device. At least one traversing section CS of the bond wire extends across the semiconductor die. A length of the traversing section CS is longer than half a dimension SD of the semiconductor die.

[0062] The method may further include attaching the semiconductor die to a package structure. The package structure may include a lead frame. For example, a bond wire may be bonded from one ground pad of the package structure to another ground pad of the package structure or to a ground pad of the semiconductor die 120.

[0063] The method may further comprise forming a gel to cover at least a portion of the semiconductor die.

[0064] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 3 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-2) or below (e.g. Fig. 4-25) are mentioned in the embodiments described.

[0065] Fig. 4 shows a flowchart of a method for manufacturing a pressure sensor device and for forming a bond wire according to one embodiment. The method includes providing 410 a semiconductor die 120 of the pressure sensor device. The method includes forming 420 a bond wire of the pressure sensor device. A first end A of the bond wire is bonded to a bond pad of the semiconductor die. A second end B of the bond wire is an open end.

[0066] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 4 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-3) or below (e.g. Fig. 5-25) are mentioned.

[0067] Fig. 5 shows a schematic representation of a cross-section of a pressure sensor device 500 with one end of a bond wire 110 attached to a package structure 190 and the other end of the bond wire 110 attached to a semiconductor die 120 according to one embodiment. The bond wire (may be of the same type used in connecting the silicon die to the bond pads of the package structure) is routed onto and over the (MEMS) sensor (semiconductor die 120). The cross bond wire can act as an electrical shield, a lightning arrester, and also as a mechanically stabilizing anchor. Fig. 5 further shows a housing structure 190. In Fig. 5, the bond wire 110 is connected to only two bond pads. One of the two bond pads is a ground pad of the package structure 190. The other of the two bond pads is a ground pad of the semiconductor die 120. In Fig. 5, the bond wire 110 crosses a cavity 180. A length of the bond wire 110 that crosses the cavity 180 is at least twice as long as a length that does not cross the cavity 180. The bond wire 110 is connected from the package structure 190 to the semiconductor die 120 in such a way that the bond wire crosses at least a dimension SD of the semiconductor die 120 from the package structure 190 to the ground pad of the semiconductor die 120. The ground pad of the semiconductor die 120 is located at a distal edge with respect to the ground pad of the package structure 190. The bond wire 110 that crosses at least a portion of the semiconductor die 120 may be referred to as a cross bond wire.

[0068] For example, Fig. 5 a cross bond from chip to lead. The cross bond can be bonded to the chip side at the main GND (ground) pad, or an additional pad can be added to reduce susceptibility to radiation.

[0069] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. The embodiment shown in Figure 5 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-4) or below (e.g. Fig. 6-25) are mentioned.

[0070] Fig. 6 shows a schematic plan view of a top side of the pressure sensor component of Fig. 5. The bond wire extends from one edge of the package structure 190 to an opposite edge of the semiconductor die 120 such that the bond wire 110 traverses at least one dimension SD of the semiconductor die 120.

[0071] Fig. Figure 7 shows another schematic plan view of the pressure sensor component of Fig. 5. Furthermore, Fig. 6 shows a housing diagram.

[0072] The transverse bond wire 110 is routed across the sensor area. The direction of the bond wire 110 in the xy plane can be diagonal across the (MEMS) semiconductor die 120 or parallel to one side, for example. The z-axis distance between the bond wire 110 and the MEMS semiconductor die 120 is adjustable. The confinement of the wire inside the gel or outside the gel is adjustable. For example, a start-end point can be on the leadframe, or it can start on the leadframe and end on the chip, chip-to-chip, or stud bump wire (one end bonded, the other end free).

[0073] Fig. 7 schematically illustrates a chip-to-lead cross bond. The cross bond wire 110 may be bonded to the chip side on a main ground pad or an additional pad may be added.

[0074] Fig. 8 shows a schematic representation of a cross-section of a pressure sensor device 600 with one end of a bond wire 110 connected to a package structure 190 and the other end of the bond wire 110 also connected to the package structure 190 according to one embodiment. The bond wire 110 extends across the semiconductor die 120. The bond wire 110 is connected only between two ground pads on the package structure 190. The bond wire extends partially through the cavity 180. The cavity 180 covers / surrounds the bond wire 110 for at least 70% of a length of the bond wire. The bond wire is adapted to extend across a central region of the semiconductor die 120. Thus, electrical charges can be prevented from discharging through a membrane of the semiconductor die 120.

[0075] For example, Fig. 8 a cross-bond from lead to lead. The electrical effects (field reduction under the wire, corona focal point) can be significantly improved with this configuration.

[0076] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. The embodiment shown in Figure 8 may comprise one or more optional additional features corresponding to one or more aspects that may be used in connection with the proposed concept or with one or more of the above (e.g. Fig. 1-7) or below (e.g. Fig. 9-25) are mentioned.

[0077] Fig. 9 shows a schematic top view of the pressure sensor device 600 of Fig. 8. The bond wire 110 is connected only to two opposite edges of the package structure 190 such that the bond wire extends in a diagonal direction across the semiconductor die 120.

[0078] Fig. 10 shows a schematic representation of a cross-section of a pressure sensor device 700 with one end of a bond wire 110 connected to a semiconductor device 120, an intermediate end of the bond wire 110 connected to the semiconductor device 120, and a second end of the bond wire 110 connected to a package structure 190 according to an embodiment. The bond wire 110 is provided by bonding from the first end of the bond wire 110 to the intermediate end of the bond wire 110 to the second end of the bond wire 110. The portion of the bond wire 110 between the first end of the bond wire 110 and the intermediate end of the bond wire 110 extends through the cavity 180.

[0079] For example, Fig. 10 a cross bond on the chip (land to land) and a ball to wedge to bump.

[0080] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. The embodiment shown in Figure 10 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-9) or below (e.g. Fig. 11-25) are mentioned.

[0081] Fig. 11 shows a schematic representation of a top view of the pressure sensor component of Fig. 10. The portion of the bond wire 110 between the first end of the bond wire 110 and the intermediate end of the bond wire 110 is at least larger than a dimension SD of the semiconductor die 120. The portion of the bond wire 110 between the first end of the bond wire 110 and the intermediate end of the bond wire 110 is smaller than a diagonal dimension DD of the semiconductor die 120. The intermediate end of the bond wire 110 is located at a near edge / corner with respect to the second end of the bond wire 110. The bond wire 110 is bonded in the transverse direction from an outer bond pad (first end) of the semiconductor die 120 to an outer bond pad (second end) of the package structure 190.

[0082] Fig. Figure 12 shows another schematic representation of a top view of the pressure sensor device of Fig. 10.

[0083] Fig. 13 shows a schematic top view of a pressure sensor device 800 with bond wires 110 placed on a ground pad of a package structure, according to one embodiment. The bond wires 110 are in the form of stud bumps. Two stud bumps are placed on a ground pad farthest from the semiconductor die 120.

[0084] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 13 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-12) or below (e.g. Fig. 14-25) are mentioned in the embodiments described.

[0085] Fig. 14 shows a schematic representation of a top view of a pressure sensor device 900 with bond wires 110 extending from edges of a semiconductor die 120 to respective other edges of the semiconductor die 120 according to one embodiment. Two bond wires 110 are shown extending parallel to an edge of the semiconductor die 120 from one edge to the other. Furthermore, bond wires 110 in the form of stud bumps are shown. The stud bumps are evenly distributed on respective (remaining) ground pads of the semiconductor die 120.

[0086] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 14 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-13) or below (e.g. Fig. 15-25) are mentioned.

[0087] Fig. Figure 15 shows a schematic representation of a stud bump bond wire 110. The stud bump may have a length / height of less than 400 µm.

[0088] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 15 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-14) or below (e.g. Fig. 16-25) described embodiments.

[0089] Fig. Figure 16 shows a schematic representation of a stud bump-shaped bond wire 110 with a slope. The stud bump may be slanted / inclined. The height of the stud bump may be less than 800 µm.

[0090] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 16 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-15) or below (e.g. Fig. 17-25) are mentioned in the embodiments described.

[0091] Fig. Figure 17 shows a schematic diagram of an electrostatic discharge test on automotive pressure sensors. Fig. Figure 17 further shows a sensor module 100 (pressure sensor component 100 according to the previous figures), an ESD gun, an ESD generator, a ground plane, an ECU equivalent (ECU = electronic control unit), a battery, and a monitoring system. The ESD gun is driven by the ESD generator, which generates a pulse for testing the ESD capabilities. The ECU is powered by a battery and has a monitoring system connected via an optical link. The ground plane is grounded via a 1 MOhm impedance. A field coupling plane is isolated from the ground plane by a 50 mm dielectric insulation.

[0092] For example, the proposed concept can be used for automotive pressure sensors. These sensors are designed to retain full functionality during directly powered ESD air discharge tests (e.g., side airbag door satellite sensors).

[0093] One of the problems during the ESD air discharge test is that the pressure sensor reading is corrupted, which can cause a specification violation.

[0094] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 17 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-16) or below (e.g. Fig. 18-25) are mentioned in the embodiments described.

[0095] Fig. Figure 18 shows a schematic diagram of a test system overview of a discharge test on automotive pressure sensors. The test system includes a monitoring system, a programmable FPGA, an ECU equivalent, a battery, a twisted pair cable, and a plastic sensor module with the sensor IC and optional external circuitry on a PCB. The plastic sensor module is connected to the ECU equivalent via the twisted pair cable. The ECU equivalent is powered by the battery and is connected to the programmable FPGA via the optical link. The monitoring system is connected to the programmable FPGA.

[0096] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 18 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-17) or below (e.g. Fig. 19-25) are mentioned in the embodiments described.

[0097] Fig. 19 shows a schematic representation of a material stack in a pressure sensor module 100. Fig. 19 further shows an air discharge gun tip, an IC package 190, a sensor module package 130, a single-hole lid 160, a sensor die 120, a die cover (gel) 140, a bonding wire 110, a cavity 180, and a PCB. The single-hole lid 160 can also be omitted, such that the cavity extends only to an open lid 160.

[0098] In contrast to contact discharge ESD tests, in which electrostatic discharge is applied directly to conductive parts of the system under test, ESD air discharge tests are performed by approaching a charged ESD gun (air discharge gun tip) toward specified isolated locations (e.g., sensor module housing 130) in the system under test.

[0099] Due to the insulating properties of the gel 140 and the cavity, the affected surfaces remain charged even after the gas discharges have ceased.

[0100] There are two main problem classes associated with ESD air discharges in pressure sensors (depending on the implementation also other sensors, e.g. gas).

[0101] Transients with high electric field intensity impair the MEMS pressure sensor readout. This is especially true for sensors with a capacitive pressure readout principle.

[0102] In automotive pressure sensors, the sensor is also covered with a gel, primarily as protection against particulate contamination and to prevent corrosion of the terminal pads and bond wires caused by moisture that might penetrate through the pressure port opening. The shape and position of the protective gel is also affected during an ESD test due to the secondary effects of the gas discharges, which cause a mechanical impact on the pressure sensor diaphragm. This translates into an unwanted pressure pulse in the pressure sensor's output signal, regardless of the sensing principle (capacitive, piezoresistive, etc.).

[0103] The test is performed on the second-level package. Protection methods may include proper second-level package design with sufficient electrical isolation and distance between the ESD gun and the chip within the (satellite) pressure sensor module 100. Methods may include grounded metal covers for the sensor IC 150 to shield the sensor 150 from the resulting ESD electric field effects (gas discharge).

[0104] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 19 may comprise one or more optional additional features corresponding to one or more aspects that may be used in connection with the proposed concept or one or more of the above (e.g. Fig. 1-18) or embodiments described below.

[0105] Some embodiments relate to a cross bond wire as a protection method against powered ESD discharges.

[0106] In one aspect, the electric field under the crossing section CS of the bond wire 110 may be reduced.

[0107] In one aspect, the transversely extending bond wire 110 can concentrate the electric field at a single point, thereby avoiding its impingement and secondary effects on gel coverage.

[0108] According to one aspect, the crossing section CS of the bonding wire 110 can prevent the generated free charges from sticking to a gel surface because they can be directly captured by the conductive crossing section CS of the bonding wire 110 during a gas discharge.

[0109] In one aspect, the transverse section CS of the bond wire 110 can mechanically stabilize the gel.

[0110] In one aspect, the crossing section CS of the bond wire 110 may reduce movement of the gel.

[0111] According to one aspect, the crossing section CS of the bond wire 110 may reduce the pulse on a MEMS membrane of the semiconductor die 120 under an influence of the ESD discharge.

[0112] In one aspect, electric fields (field decay under the bond wire 110, corona focal point) may be optimal to protect against ESD.

[0113] According to one aspect, ESD behavior at a Tier 1 level can be made independent on a Tier 1 design.

[0114] According to one aspect, the powered ESD susceptibility is reduced.

[0115] In one aspect, greater flexibility in module design (e.g., with a MEMS sensor aligned in the pressure sensor device 100 in directions other than toward an interior of a car door) may be achieved.

[0116] According to one aspect, lower cost manufacturing and lower testing costs are possible.

[0117] According to one aspect, ESD shielding and sensing of corona-generated charges can be achieved through a grounded conductive cross-bond. These measures are implemented either at the chip package level or at a die level (first-level package).

[0118] According to one aspect, a gas discharge may be conducted.

[0119] In one aspect, a pressure sensor device 100 can be provided at a lower cost.

[0120] In one aspect, flexibility can be provided at the Tier 1 and OEM levels because there is no additional constraint on the design of a pressure sensor.

[0121] Grounded metal covers can be expensive. Thus, in one aspect, a more cost-effective pressure sensor device 100 can be provided without the need for an investment in equipment.

[0122] Fig. 20 shows a schematic representation of a cross-section of a pressure sensor device. The pressure sensor device 2000 includes a semiconductor die 120 of the pressure sensor device 2000 and a bond wire 110 of the pressure sensor device 2000. A maximum vertical distance 2012 between a portion of the bond wire 110 and the semiconductor die 120 is greater than a minimum vertical distance 2014 between the semiconductor die 120 and a surface of a gel covering the semiconductor die 2010.

[0123] By implementing a bond wire that extends vertically far away from the semiconductor die and higher than a surface of the gel, electrical discharge through unwanted parts of the semiconductor die or at the surface of the gel can be reduced or avoided. This can improve the ESD robustness of the semiconductor die and / or the pressure sensor device.

[0124] The maximum vertical distance between the bond wire 110 and the semiconductor die 120 may be measured between a portion of the bond wire 110 having the greatest vertical distance from the semiconductor die 120 and an interface or boundary between the gel 2010 and the semiconductor die 120 (or a surface of a semiconductor substrate of the semiconductor die). For example, the maximum vertical distance 2012 between the portion of the bond wire 110 and the semiconductor die 120 may be greater than 600 µm (or greater than 800 µm or greater than 1 mm) and / or less than 5 mm (or less than 2 mm or less than 1 mm).

[0125] The minimum vertical distance 2014 between the semiconductor die 120 and a surface of a gel 2010 may be measured between a portion of the surface of the gel 2010 having the smallest vertical distance from the semiconductor die 120 and the interface or boundary between the gel 2010 and the semiconductor die 120 (or a surface of a semiconductor substrate of the semiconductor die). For example, the minimum vertical distance 2014 between the semiconductor die 120 and the surface of the gel 2010 may be greater than 1 µm (or greater than 5 µm or greater than 10 µm) and / or less than 200 µm (or less than 100 µm or less than 50 µm).

[0126] The maximum vertical distance and the minimum vertical distance can be measured orthogonal to a (front or back) surface of a semiconductor substrate of the semiconductor die.

[0127] For example, the maximum vertical distance 2012 between the part of the bond wire 110 and the semiconductor die 120 may be greater than two times (or greater than 5 times or greater than 10 times) the minimum vertical distance 2014 between the semiconductor die 120 and the surface of the gel 2010.

[0128] A cavity may be disposed adjacent to the gel 2010 covering the semiconductor die 120. The surface of the gel may be a boundary between the gel 2010 and the cavity. The gel may cover the cavity such that the cavity does not reach the semiconductor die 120. In this way, the gel may protect the semiconductor die (e.g., from moisture) but may still allow pressure to be exerted on the semiconductor die through the cavity. For example, at least a portion of the bond wire (e.g., at least the part with the greatest vertical distance from the semiconductor die) may be disposed within the cavity.

[0129] For example, at least a portion of the bond wire 110 may be disposed outside the gel (e.g., within the cavity). Alternatively, the bond wire may be covered by a gel thin film. The gel thin film may have a thickness of less than 5 µm (or less than 2 µm, or less than 1 µm). For example, a gel spray may be used to cover the semiconductor die with gel, which may also cover the bond wire with the gel (e.g., completely cover it).

[0130] The semiconductor die 120 may have a membrane structure. The membrane structure (e.g., MEMS membrane structure; MEMS = micro-electro-mechanical system) may be configured to deform due to a change in an existing gas pressure. For example, no bond wire of the pressure sensor device 2000 may overlap the membrane structure in a top view of the semiconductor die 120. In this way, a simple and / or automatic optical inspection of the membrane structure may be possible even after bonding the bond wire 110 to the semiconductor die 120. For example, easier manufacturability may be enabled compared to a cross-bond device. The optical line of sight to the MEMS from above may be free (unobstructed) to allow some manufacturing test measurements (e.g., gel height measurements).

[0131] The semiconductor die 120 may have a first bonding pad, and one end of the (first) bonding wire 110 may be bonded to the first bonding pad of the semiconductor die 120.

[0132] The semiconductor die 120 may further include a second bond wire bonded to a second bond pad of the semiconductor die 120. For example, a lateral distance between the first bond pad and the second bond pad may be greater than half a lateral dimension of the semiconductor die 120.

[0133] The pressure sensor device 2000 may have a package structure (e.g., lead frame) comprising a bonding pad, and one end of the (first) bonding wire 110 may be bonded to the bonding pad of the package structure.

[0134] The first bond pad and / or the second bond pad of the semiconductor die 120 and / or the bond pad of the package structure may be a reference voltage pad (e.g., ground pad).

[0135] For example, the first bond pad and / or the second bond pad may be a corner bond pad. A corner bond pad may be a bond pad closer to a corner of the semiconductor die 120 than any other bond pad of the semiconductor die 120. For example, a rectangular or square-shaped semiconductor die may have four corner pads.

[0136] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 20 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-19) or below (e.g. Fig. 21-25) are mentioned in the embodiments described.

[0137] Fig. 21 and Fig. 22 show schematic representations of a pressure sensor device 2100 comprising two high loop bond wires 110 bonded to opposite corner pads of the semiconductor die 120 of the pressure sensor device 2100. The implementation of the pressure sensor device 2100 may be similar to the implementation described in connection with Fig. 20 is described.

[0138] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 20 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-20) or below (e.g. Fig. 23-25) are mentioned in the embodiments described.

[0139] Fig. 23 shows a schematic representation of a cross section of a pressure sensor device and a spherical equipotential surface 2310 and Fig. Figure 24 shows a schematic representation of a spherical equipotential surface reaching the high bond wires. Some factors and / or criteria for effectiveness can be the lightning sphere shape, the lightning sphere radius, the distance between the lightning rods (e.g., apex of the bond wires), and / or the height of the bond wires above the gel surface. The lightning sphere is centered around the gun tip if the die is not mounted in a second-level package (module). Mounting the die in a module can bend the electric field lines, and the equipotential surface is no longer perfectly spherical, making a numerical criterion difficult outside of a specific module configuration. The closer the gun tip can reach the sensor IC (integrated circuit), the smaller the lightning sphere can be and the harder the die protection can be (e.g., a denser network of lightning rods can be used).The closer the tall bond wires are, the more gel volume can be protected between them. Furthermore, the tall bond wires can extend uniformly throughout the gel surface. The taller the bond wires, the better the protection can be.

[0140] A simplified numerical criterion for two corner bonds can be given by Fig. 24. Assume a spherical lightning sphere and the lightning sphere is above the gel. At the boundary, the lightning sphere touches the gel, and the condition can be as follows: Δh>R*(1−sqrt(1−(d / 2R)2)) where d is the distance between the vertices of the tall bond wires, R is the radius of the spherical lightning ball, and Δh is the difference between the maximum vertical distance between the vertex of the bond wire and the semiconductor die and the minimum vertical distance between the semiconductor die and the surface of the gel covering the semiconductor die.

[0141] Fig. 25 shows a flowchart of a method for forming a pressure sensor device. The method 2500 includes providing 2510 a semiconductor die of the pressure sensor device and forming 2520 a bond wire of the pressure sensor device. A maximum vertical distance between a portion of the bond wire and the semiconductor die is greater than a minimum vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die.

[0142] By implementing a bond wire that extends vertically far away from the semiconductor die and higher than a surface of the gel, electrical discharge through unwanted parts of the semiconductor die or at the surface of the gel can be reduced or avoided. This can improve the ESD robustness of the semiconductor die and / or the pressure sensor device.

[0143] Further details and aspects are mentioned in connection with the embodiments described above or below. Fig. 20 may comprise one or more optional additional features corresponding to one or more aspects that may be associated with the proposed concept or with one or more of the above (e.g. Fig. 1-24) or embodiments described below.

[0144] Some embodiments relate to the implementation of tall corner bonds (e.g., two or more corner bonds) that do not extend or cross the die. For example, more lightning rods (>=2) implemented by the bond wires may be used to increase the ESD-protected volume beneath them, in order to be able to protect the MEMS and the gel above it, even if the lightning rod does not cross over the MEMS. For example, tall bond wires designed with a higher crest may be implemented to meet sufficient criteria. Additionally or alternatively, leadframe sections or any other system of two or more grounded conductive metal parts that fulfill this function and arrangement may be used.

[0145] The rolling sphere for testing the arrester system's effectiveness can be an imaginary sphere with an equipotential surface in which lightning can occur. The area under the tips of the arresters can be protected (e.g., has a low lightning risk) because the electric potential and the electric field are much lower. By using a cross-bond (e.g., Fig. 1) The gel volume above the die can be protected by the cross-bond. The flash sphere (e.g., the equipotential surface around the gun tip) may not touch the surface of the gel above the die (the sensitive area) due to the cross-bond.

[0146] With a single, high corner bond, which is easy to manufacture, the flashing ball can still touch the gel surface above the die. To be effective, the height of a single, high corner bond can exceed easily manufactured values ​​(e.g., the wire can cut through the plastic package).

[0147] Therefore, two or more high corner bonds can be used. The gel volume above the die can be protected by the two high corner bonds (e.g. Fig. 23). In this way, the flash sphere (e.g., the equipotential surface around the gun tip) may not touch the surface of the gel above the die (e.g., the sensitive area).

[0148] The height of the bond wires can be measured in an X-ray image, using the profile of the high corner bond wires, added markers for gel surface area, and a vertical ruler to measure the bond crest height. For example, depending on the size of the semiconductor die, a 600 µm high bond wire may not provide sufficient protection, while an 800 µm high bond wire may provide a sufficiently reduced risk of ESD damage to the device.

[0149] The aspects and features described together with one or more of the previously detailed examples and figures may also be combined with one or more of the other examples to replace a like feature of the other example or to additionally introduce the feature into the other example.

[0150] Methods disclosed in the description or in the claims may be implemented by an apparatus having means for performing each of the respective steps of those methods.

[0151] It should be understood that the disclosure of multiple steps, processes, operations, or functions disclosed in the description or claims should not be construed as being in that particular order unless explicitly or implicitly stated otherwise, e.g., for technical reasons. Therefore, the disclosure of multiple steps or functions does not limit them to a particular order unless those steps or functions are not interchangeable for technical reasons. Furthermore, in some examples, a single step, function, process, or operation may include and / or be broken down into multiple sub-steps, functions, processes, or operations. Such sub-steps may be included and be part of the disclosure of that single step unless explicitly excluded.

[0152] Furthermore, the following claims are hereby incorporated into the Detailed Description, where each claim may stand on its own as a separate example. While each claim may stand on its own as a separate example, it should be noted that although a dependent claim may refer to a particular combination with one or more other claims in the claims, other examples may include a combination of the dependent claim with the subject matter of any other dependent or independent claim. Such combinations are explicitly suggested herein unless it is stated that a particular combination is not intended. Furthermore, features of a claim for any other independent claim are also intended to be included, even if that claim is not made directly dependent on the independent claim.

Claims

[1] A pressure sensor device (2000) comprising: a semiconductor die (120) of the pressure sensor component (2000); a cavity; and a bonding wire (110) of the pressure sensor component (2000); wherein a maximum vertical distance (2012) between a portion of the bond wire (110) and the semiconductor die (120) is greater than a minimum vertical distance (2014) between the semiconductor die (120) and a surface of a gel covering the semiconductor die, wherein the cavity is arranged adjacent to the gel covering the semiconductor die (120), wherein at least a portion of the bond wire (110) is arranged within the cavity, wherein at least one traversing portion (CS) of the bond wire (110) extends over the semiconductor die (120), and wherein a length of the traversing portion (CS) is longer than half a length (SD) of the semiconductor die (120). [2] The pressure sensor device according to claim 1, wherein at least a portion of the bonding wire (110) is arranged outside the gel. [3] The pressure sensor device according to claim 1, wherein the bonding wire is covered by a gel thin film. [4] The pressure sensor device according to any one of the preceding claims, wherein the maximum vertical distance (2012) between the part of the bond wire (110) and the semiconductor die (120) is greater than 600 µm. [5] The pressure sensor device according to any one of the preceding claims, wherein the minimum vertical distance (2014) between the semiconductor die (120) and the surface of the gel (2010) is greater than 1 µm and less than 200 µm. [6] The pressure sensor device according to any one of the preceding claims, wherein the maximum vertical distance (2012) between the part of the bond wire (110) and the semiconductor die (120) is greater than twice the minimum vertical distance (2014) between the semiconductor die (120) and the surface of the gel (2010). [7] The pressure sensor device according to any one of the preceding claims, wherein the semiconductor die (120) has a first bonding pad, wherein one end of the bonding wire (110) is bonded to the first bonding pad of the semiconductor die (120). [8] The pressure sensor device according to claim 7, wherein the first bonding pad is a reference voltage pad. [9] The pressure sensor device according to claim 8 or 9, further comprising a second bonding wire bonded to a second bonding pad of the semiconductor die (120), wherein a lateral distance between the first bonding pad and the second bonding pad is greater than half a lateral dimension of the semiconductor die (120). [10] The pressure sensor component according to one of the preceding claims, wherein the pressure sensor component (100) has a housing structure comprising a bonding pad, wherein one end of the bonding wire (110) is bonded to the bonding pad of the housing structure. [11] A pressure sensor device (100) comprising: a semiconductor die (120) of the pressure sensor component (100); and a bonding wire (110) of the pressure sensor component (100); wherein at least one traversing portion (CS) of the bonding wire (110) extends over the semiconductor die (120), and wherein a length of the traversing portion (CS) is longer than half a length (SD) of the semiconductor die (120), wherein the traversing portion (CS) is routed over a sensor region of the pressure sensor component. [12] A pressure sensor device (100) according to claim 11, wherein an intermediate contact portion of the bonding wire (110) is bonded to a bonding pad of the semiconductor die (120). [13] A pressure sensor device (100) according to claim 12 or 13, wherein the semiconductor die (120) comprises a membrane structure configured to be deformed by an existing gas pressure. [14] A pressure sensor device (200) comprising: a semiconductor die (120) of the pressure sensor component (100); and a bonding wire (110) of the pressure sensor component (100), wherein a first end (A) of the bonding wire is bonded to a bonding pad of the semiconductor die (120) and a second end (B) of the bonding wire (110) is an open end, wherein at least one traversing portion (CS) of the bonding wire (110) extends over the semiconductor die (120), and wherein a length of the traversing portion (CS) is longer than half a length (SD) of the semiconductor die (120), wherein the traversing portion (CS) is routed over a sensor region of the pressure sensor component. [15] The pressure sensor device according to claim 14, wherein a length of the bonding wire (110) of the pressure sensor device (100) is less than 1 mm. [16] A method (2500) for manufacturing a pressure sensor device, comprising: Providing (2510) a semiconductor die of the pressure sensor component in a cavity of the pressure sensor component; and Forming (2520) a bond wire of the pressure sensor component, wherein a maximum vertical distance between a portion of the bond wire and the semiconductor die is greater than a minimum vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die, wherein the cavity is arranged adjacent to the gel covering the semiconductor die (120), wherein at least a portion of the bond wire (110) is arranged within the cavity, wherein at least a traversing portion (CS) of the bond wire (110) extends over the semiconductor die (120), and wherein a length of the traversing portion (CS) is longer than half a length (SD) of the semiconductor die (120).

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