DISTRIBUTORS AND SYNTHETICS

A multilayer substrate-based distributor/synthesizer with optimized phase adjustment and insulation resistors addresses size and loss issues in Wilkinson distributors, enabling efficient high-frequency operations with reduced wavelength effects and improved isolation.

DE112018003343B4Active Publication Date: 2026-01-29SONY SEMICON SOLUTIONS CORP
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Patent Information

Application Number
DE112018003343
Authority / Receiving Office
DE · DE
Patent Type
Patents
Current Assignee / Owner
Priority Date
2017-06-29
Filing Date
2018-06-15
Publication Date
2026-01-29
Estimated Expiration
2038-06-15

AI Technical Summary

Technical Problem

Conventional Wilkinson distributors for multi-distribution on a substrate face challenges with increased size and loss due to long transmission line lengths, especially in high-frequency bands required for 5G communications, leading to inadequate isolation characteristics.

Method used

A distributor/synthesizer configuration using a multilayer substrate with VIA wiring, incorporating phase adjustment units and insulation resistors, optimized for reduced size and low loss, with specific impedance and phase shift settings to maintain isolation and bandwidth.

Benefits of technology

The solution achieves a compact design with low loss and effective isolation characteristics, supporting high-frequency operations by minimizing wavelength effects and ensuring sufficient bandwidth and isolation across multiple distributions.

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Abstract

Distributor formed on a substrate and featuring: an input branching unit (52) connected to an external transmission line on an input side of the distributor; n distribution lines (53) connected to the input branching unit (52) to distribute a path entering the input branching unit (52) into n paths; an output branching unit (54) that divides each of the n paths on the output side of the n distribution lines into an internal path and an external transmission line on an output side of the distributor; a coupling terminal that couples the n internal paths together; and n phase adjustment units (55) arranged between the output branching unit (54) and the coupling terminal (57) such that they are connected in series with a resistor (56) in each of the n internal paths and are suitable for adjusting a phase, wherein the magnitude of a phase shift from the input branch unit (52) to the output branch unit (54) in each of the n paths is π / 2 [rad], and an amount of phase shift from the output branching unit (54) to the coupling terminal (57) in each of the n internal paths π [rad] or a real number times π [rad]; where if an input impedance Z in is, an output impedance Z out where is a distribution number n, a characteristic impedance Z1 of each distribution line is given by √ (n Z in Z out ) is designed, and a resistance value R of each resistor (56) as Z out is designed; and a characteristic impedance Z2 of each phase adjustment unit (55) is designed such that it is within a range of Z out / 2 ≤ Z2 ≤ 2 * Z out lies.
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Description

TECHNICAL AREA

[0001] The present technology relates to a distributor and a synthesizer, and in particular to a distributor and a synthesizer that can achieve miniaturization and low loss. GENERAL STATE OF THE ART

[0002] To configure a Wilkinson distributor for multi-distribution on a substrate, a conventional method was to connect a two-way distributor in a tournament configuration. However, if the number of distributions is large, the total transmission line length becomes long, leading to an increase in size and loss.

[0003] Therefore, Patent Document 1 proposes that a basic Wilkinson multi-distributor be configured by means of wiring using a VIA on a multi-layer substrate. With this proposal, four divisions in three layers and six divisions in five layers can be achieved, thus making the wiring length shorter than in a distributor achieved by connecting a circuit for a dual distribution on a substrate in a Tournament system.

[0004] US 2011 / 004331 and JP 11340712 A each disclose a distributor / synthesizer that splits one input into N outputs. Each of the N paths thus formed is connected to a resistor and an insulator, which in turn are centrally coupled to each other. QUOTE LIST PATENT DOCUMENT

[0005] Patent document 1: Published Japanese patent application no. H11-97952 SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION

[0006] Furthermore, fifth-generation (5G) mobile communications require a high-frequency band of 20 GHz or higher. In such a high-frequency band, according to the technology disclosed in patent document 1, the number of stacked layers increases with the distribution number, and the length of the VIA (connecting wires acting as insulation resistances) becomes longer. Consequently, at the high frequency required in 5G, the wavelength cannot be ignored, and the necessary isolation characteristics cannot be achieved.

[0007] The present technology was developed with such circumstances in mind and can achieve a reduction in size and low loss. SOLUTIONS FOR THE PROBLEMS

[0008] This problem is solved by the subject matter of independent claims. EFFECTS OF INVENTION

[0009] According to the available technology, in particular, a reduction in size and low loss can be achieved.

[0010] Please note that the effects described herein are for illustrative purposes only, the effects of the present technology are not limited to those described herein, and the present technology may have additional effects. BRIEF DESCRIPTION OF THE DRAWINGS Fig. Figure 1 is a block diagram showing a configuration example of a transmission and reception unit in a signal processing device for which the present technology is used. Fig. Figure 2 is an equivalent circuit diagram showing a first configuration example of a distributor / synthesizer. Fig. Figure 3 is an equivalent circuit diagram showing a second configuration example of a distributor / synthesizer. Fig. Figure 4 is an equivalent circuit diagram showing a third configuration example of a distributor / synthesizer. Fig. Figure 5 is a top view showing a first structural example of a distributor / synthesizer. Fig. Figure 6 is a cross-sectional view showing the first structural example of a distributor / synthesizer. Fig. Figure 7 is an equivalent circuit diagram that shows a configuration example of the distributor / synthesizer in Fig. 5 shows. Fig. Figure 8 is a diagram showing a simulation result. Fig. Figure 9 is a diagram showing a simulation result. Fig. Figure 10 is a diagram showing an example of a conventional quadrant distributor. Fig. Figure 11 is a top view showing a second structural example of a distributor / synthesizer. Fig. Figure 12 is a cross-sectional view showing the second structural example of a distributor / synthesizer. Fig. Figure 13 is a top view showing a third structural example of a distributor / synthesizer. Fig. Figure 14 is a cross-sectional view showing the third structural example of a distributor / synthesizer. Fig. Figure 15 is a top view showing a fourth structural example of a distributor / synthesizer. Fig. Figure 16 is a cross-sectional view showing the fourth structural example of a distributor / synthesizer. Fig. Figure 17 is a block diagram showing a configuration example of a phase adjustment unit. MODE FOR EXECUTING THE INVENTION

[0011] The following describes modes (hereinafter referred to as embodiments) for implementing the present disclosure. The description is given in the following order. 1. Some configuration examples of a signal processing device 2. Configuration example of a distributor / synthesizer 3. First structural example of a distributor / synthesizer 4. Simulation results 5. Second structural example of a distributor / synthesizer 6. Third structural example of a distributor / synthesizer 7. Fourth structural example of a distributor / synthesizer 8. Configuration example of a phase adjustment unit <Einige Konfigurationsbeispiele einer Signalverarbeitungsvorrichtung>

[0012] Fig. Figure 1 shows a configuration example of a transmission and reception unit in a signal processing device for which the present technology is used.

[0013] Fig. Figure 1 shows a configuration example of a transmission and reception unit 11, which is a front-end or front module (FEM) in a signal processing device. The transmission and reception unit 11 includes amplifiers 21-1 and 21-2, filters 22-1 and 22-2, a switch 23, a distributor / synthesizer 24, phase shifters 25-1 to 25-4, and antennas 26-1 to 26-4.

[0014] Amplifier 21-1 amplifies a signal from a signal processing unit and outputs the amplified signal to filter 22-1. Amplifier 21-2 amplifies a signal from filter 22-2 and outputs the amplified signal to a signal processing unit (not shown).

[0015] Filter 22-1 performs filtering on the signal from amplifier 21-1 and outputs the filtered signal to switch 23. Filter 22-2 performs filtering on the signal from distributor / synthesizer 24, which was fed in via switch 23, and outputs the filtered signal to amplifier 21-2.

[0016] During signal transmission, switch 23 selects a terminal on the side of filter 22-1 and outputs a signal from that terminal to distributor / synthesizer 24. Furthermore, during signal reception, switch 23 selects a terminal on the side of filter 22-2 and outputs a signal from distributor / synthesizer 24 to a terminal on filter 22-2.

[0017] The distributor / synthesizer 24 synthesizes the signals from the phase shifters 25-1 to 25-4 and outputs the synthesized signals to the switch 23. Furthermore, the distributor / synthesizer 24 distributes the signal from the switch 23 and outputs the signal to the phase shifters 25-1 to 25-4.

[0018] Each of the phase shifters 25-1 to 25-4 performs a phase shift to adjust the phases of the signals from antennas 26-1 to 26-4 and outputs the phase-shifted signals to the distributor / synthesizer 24. Each of the phase shifters 25-1 to 25-4 performs a phase shift to slightly shift the phase of the signal from the distributor / synthesizer 24 and outputs the phase-shifted signal to antennas 26-1 to 26-4.

[0019] Antennas 26-1 to 26-4 are omnidirectional antennas and form a four-element antenna array. Each of antennas 26-1 to 26-4 receives, for example, a signal from a radio wave base station and transmits the received signal to phase shifters 25-1 to 25-4. Furthermore, antennas 26-1 to 26-4 transmit signals from phase shifters 25-1 to 25-4 to the radio wave base station.

[0020] Note that in the example of Fig. 1. An example with four elements is shown; however, other numbers of elements, such as eight elements, can be used. Furthermore, the example of Fig. 1 the filters 22-1 and 22-2 are arranged between the distributors 21-1 and 21-2 and the switch 23; however, the filters 22-1 and 22-2 can be arranged between the distributor / synthesizer 24 and the phase shifters 25-1 and 25-4.

[0021] In the following description, amplifiers 21-1 and 21-2 are referred to collectively as amplifier 21, and filters 22-1 and 22-2 are referred to collectively as filter 22, unless it is particularly necessary to distinguish between them. Furthermore, phase shifters 25-1 to 25-4 are referred to collectively as phase shifter 25, and antennas 26-1 to 26-4 are referred to collectively as antenna 26. <Konfigurationsbeispiel eines Verteilers / Synthetisierers>

[0022] Fig. Figure 2 is an equivalent circuit diagram showing a first configuration example of the distributor / synthesizer 24.

[0023] The following describes an example of signal distribution. Note that in the case of synthesis, the signal flow is reversed, and the input and output sides are reversed compared to those in the case of distribution.

[0024] The distributor / synthesizer 24 is formed on the substrate. The distributor / synthesizer 24 includes an input and output terminal 51, an input branching unit 52, distribution lines 53-1 to 53-4, an output branching unit 54, phase adjustment units 55-1 to 55-4, insulation resistors 56-1 to 56-4, a coupling terminal 57, and input and output terminals 58-1 to 58-4.

[0025] In the following, where it is not particularly necessary to distinguish between them, distribution lines 53-1 to 53-4 will be referred to collectively as distribution line 53, and phase adjustment units 55-1 to 55-4 will be referred to collectively as phase adjustment unit 55. Input and output connections 58-1 to 58-4 will be referred to collectively as input and output connection 58.

[0026] The input and output terminal 51 feeds a signal from an external transmission line into the input branching unit 52 on the input side connected to the switch 23. The characteristic impedance at the input and output terminal 51 is called the input impedance Z. in defined.

[0027] The input branching unit 52 connects the external transmission line on the input side and the distribution lines 53-1 to 53-4.

[0028] Distribution lines 53-1 to 53-4 distribute paths from the input branch unit 52 to four. "Z1, π / 2", which is located in the blocks of distribution lines 53-1 to 53-4 in Fig. Figure 2 represents the characteristic impedance Z1, or the magnitude of a phase shift π / 2 [rad] of the distribution lines 53-1 to 53-4. In fact, the magnitude of a phase shift of the distribution lines 53-1 to 53-4 represents the magnitude of a phase shift on the path from the input branch unit 52 to the output branch unit 54.

[0029] The output branching unit 54 is connected to the output side of the distribution lines 53-1 to 53-4 and divides the four distributed paths into an internal path and an external transmission line for one output. The internal path represents a path connected to the phase adjustment units 55-1 to 55-4, the insulation resistors 56-1 to 56-4, and the coupling terminal 57.

[0030] In the internal path, the phase adjustment units 55-1 to 55-4 are each provided upstream of the insulation resistors 56-1 to 56-4 and are connected in series with the insulation resistors 56-1 to 56-4.

[0031] “Z2, π”, which is found in the blocks of the phase adjustment units 55-1 to 55-4 in Fig. Figure 2 represents the characteristic impedance Z2, or the magnitude of a phase shift π [rad] of the phase adjustment units 55-1 to 55-4 (or a real number times π [rad]). In fact, the magnitude of a phase shift of the phase adjustment units 55-1 to 55-4 represents the magnitude of a phase shift on the path from the output branch unit 54 to the coupling terminal 57.

[0032] Insulation resistors 56-1 to 56-4 are used to provide insulation characteristics between terminals. Note that the type of insulation resistor can be any type, such as a chip resistor or a thin-film resistor.

[0033] The terminals on one side of the insulation resistors 56-1 to 56-4 are each connected to the phase adjustment devices 55-1 to 55-4, and the other terminals are connected to the common coupling terminal 57.

[0034] The coupling terminal 57 couples internal paths, each of which is connected to the insulation resistors 56-1 to 56-4.

[0035] The input and output terminals 58-1 to 58-4 transmit signals from the output branching unit 54 to external transmission lines, each connected to the antennas 26-1 to 26-4. The characteristic impedance at the input and output terminals 58-1 to 58-4 is defined as the output impedance Z. out defined.

[0036] Note that the description above states that the magnitudes of a phase shift of the phase-adjusting units 55-1 to 55-4 are each π [rad] or a real number times π [rad]. Specifically, each magnitude of a phase shift of the entire assembly consisting of a phase-adjusting unit, an insulation resistor, and half the size of the coupling terminal 57 (viewed from above), that is, along the path from the branch point of the output branch unit 54 (indicated by a black dot) to the coupling element 57, is π [rad] or a real number times π [rad].

[0037] Furthermore, the distributor, which includes the input and output terminal 51, the input branch unit 52, the distribution lines 53-1 to 53-4, the output branch unit 54, the insulation resistors 56-1 to 56-4, the coupling terminal 57 and the input and output terminal 58, is a Wilkinson distributor.

[0038] In other words, the distributor / synthesizer 24 is obtained by adding phase adjustment units 55-1 to 55-4, which rotate the phase by π [rad] or a real number times π [rad], in series with the insulation resistors 56-1 to 56-4 of the Wilkinson distributor.

[0039] If an input impedance Z in is, an output impedance Z out Given that and the distribution number n is , the distribution line 53 is given by √(n Z). in Z out ). Furthermore, the resistance value R of the insulation resistance 56 is defined as Z. outdesigned.

[0040] Note that each characteristic impedance Z2 of the phase adjustment units 55-1 to 55-4 can assume any value, but it affects the frequency band and the wiring area, so it is necessary to adjust the characteristic impedance Z2 according to the input and output impedances and the distribution number. By setting the characteristic impedance Z2 of the phase adjustment units 55-1 to 55-4 to a value that satisfies the condition Z out / 2 ≤ Z2 ≤ 2 * Z out If this requirement is met, the bandwidth can be guaranteed with the normalized bandwidth of approximately 10% (-20 dB width). The normalized bandwidth is a frequency resource and is the ratio of the bandwidth to the center frequency.

[0041] Note that, as described above, in the case of synthesis the signal flow is reversed, and the input and output sides are reversed compared to those in the case of distribution. In other words, input and output terminal 51 is an output terminal, and input and output terminals 58-1 to 58-4 are input terminals.

[0042] The output branch unit 54 is an input branch unit, the distribution line 53 is a synthesis line, and the input branch unit 52 is an output synthesis unit.

[0043] In other words, with regard to the configuration in the case of synthesis, by representing the function in the case of synthesis in brackets, the output branch unit (input branch unit) 54 is connected to the external transmission line on the input side via the input and output terminal 58. The output branch unit (input branch unit) 54 is divided for each of the n paths into an internal path and a distribution line (synthesis line) 53.

[0044] The input branching unit (output synthesis unit) 52 is connected to the output side of the distribution line (synthesis line) 53, which is distributed for each of the n paths, and is connected to the external transmission line on the output side via the input and output terminal 51.

[0045] In the internal path, the coupling terminal 57 couples n paths. The phase setting unit 55 is arranged between the output branch unit (input branch unit) 54 and the coupling terminal 57 such that it is connected in series with the insulation resistor 56, and sets the phase.

[0046] Other configurations are similar to the distribution case. In the case of synthesis, the magnitude of a phase shift on the path from output branch unit (input branch unit) 54 to input branch unit (output synthesis unit) 52 is π / 2 [rad] for each of the n paths. Furthermore, the magnitude of a phase shift on the path from output branch unit (input branch unit) 54 to coupling terminal 57 is π [rad] or a real number times π [rad].

[0047] Note that in Fig. 2 the example described in which the phase adjustment units 55 are each arranged in the preceding stage of the insulation resistors 56 with the side of the input and output terminal 51 as the front and the side of the coupling terminal 57 as the back. In the arrangement of Fig. 2 However, it may be difficult to connect the four insulation resistors 56 to the common coupling terminal 57 if the insulation resistors 56 are wide.

[0048] Therefore, as in the example of the next Fig. As shown in Figure 3, the phase adjustment unit 55 is not arranged in the preceding stage of the insulation resistance 56, but in the subsequent stage of the insulation resistance 56.

[0049] Fig. Figure 3 is an equivalent circuit diagram showing a second configuration example of the distributor / synthesizer 24.

[0050] The equivalent circuit diagram of Fig. 3 is the same as the equivalent circuit of Fig. 2, except that the position of the phase adjustment unit 55 and the position of the insulation resistor 56 are different. The remaining configuration of the equivalent circuit diagram of Fig. 3 is similar to the configuration of the equivalent circuit of Fig. 2, and therefore only different parts are described.

[0051] In the example of Fig. 3 is in contrast to the case of Fig. 2 the phase adjustment unit 55 connected in series with the insulation resistance 56 is arranged at the subsequent stage of the insulation resistance 56.

[0052] The output branching unit 54 is connected to the output side of the distribution line 53 and divides the four distributed paths into an internal path and a transmission line for one output. The internal path represents a path connected to the insulation resistor 56, the phase adjustment unit 55, and the coupling terminal 57.

[0053] In the internal path, the insulation resistor 56 is located in the preceding stage of the phase adjustment unit 55 and is connected in series with the phase adjustment unit 55.

[0054] One terminal of the phase adjustment unit 55 is connected to the insulation resistor 56, and the other terminal is connected to the common coupling terminal 57. “Z2, π”, which is located in the blocks of the phase adjustment unit 55 in Fig. Figure 3 represents the characteristic impedance Z2 and the magnitude of a phase shift π [rad] (or a real number times π [rad]) of the phase adjustment unit 55.

[0055] With the configuration as in Fig. As shown in Figure 3, it is not necessary to connect the four insulation resistors 56 to the common coupling terminal 57, and assembly becomes simple. However, in the case where the width of the insulation resistor 56 is wide, if the arrangement of Fig. 3 is taken, the width of the output branching unit is 54 wide, which can adversely affect the characteristics of the distributor / synthesizer 54.

[0056] Therefore, as the following example of Fig. As shown in Figure 4, the insulation resistor 56 is located in the middle of the phase adjustment unit 55.

[0057] Fig. Figure 4 is an equivalent circuit diagram showing a third configuration example of the distributor / synthesizer 25.

[0058] The equivalent circuit diagram of Fig. 4 is from the equivalent circuit diagram of Fig. 2 differs in that the phase adjustment units 55-1 to 55-4 comprise phase adjustment units 55a-1 to 55a-4 and phase adjustment units 55b-1 to 55b-4. Furthermore, the equivalent circuit diagram of Fig. 4 from the equivalent circuit diagram of Fig. 2 differs in that the insulation resistances 56-1 to 56-4 are arranged between the phase adjustment units 55a-1 to 55a-4 and the phase adjustment units 55b-1 to 55b-4. Since the remaining configuration of the equivalent circuit diagram of Fig. 4 of the configuration of the equivalent circuit diagram of Fig. Although both are similar, only different areas are described.

[0059] In the following, phase adjustment units 55a-1 to 55a-4 are referred to collectively as phase adjustment unit 55a, and phase adjustment units 55b-1 to 55b-4 are referred to collectively as phase adjustment unit 55b, unless it is particularly necessary to distinguish between them.

[0060] The output branching unit 54 is connected to the output side of the distribution line 53 and divides the four distributed paths into an internal path and an external transmission line for output. The internal path represents a path connected to the phase adjustment unit 55a, the insulation resistor 56, the phase adjustment unit 56b, and the coupling terminal 57.

[0061] In the internal path, the phase adjustment unit 55a is arranged in the preceding stage of the insulation resistor 56. The phase adjustment unit 55b is arranged in the subsequent stage of the insulation resistor 56.

[0062] The phase adjustment unit 55a, the insulation resistor 56, and the phase adjustment unit 55b are connected in series. Each of the characteristic impedances of the phase adjustment unit 55a and the phase adjustment unit 55b is the characteristic impedance Z2.

[0063] “Z2, θ1”, which is located in the blocks of the phase adjustment unit 55a in Fig. Figure 4 represents the characteristic impedance and the magnitude of a phase shift θ1 [rad] of the phase adjustment unit 55a.

[0064] “Z2, θ2”, which is located in the block of the phase adjustment unit 55b in Fig. Figure 4 represents the characteristic impedance Z2 and the magnitude of a phase shift θ2 [rad] of the phase adjustment unit 55b. One terminal of the phase adjustment unit 55b is connected to the insulation resistor 56, and the other terminal is connected to the common coupling terminal 57. Since the position of the insulation resistor 56 only needs to lie between the phase adjustment units 55a and 55b, either the magnitude θ1 or θ2 of a phase shift can be large.

[0065] Note that Fig. Figure 4 shows an equivalent circuit where the insulation resistance 56 is described as a lumped constant terminal without magnitude. The equivalent circuit of Fig. 4 actually provides π [rad] or a real number times π [rad], including the magnitude of a phase shift of the size of the resistance value R of the insulation resistance 56.

[0066] With the configuration as in Fig. As shown in Figure 4, it is possible to improve the characteristics of the distributor / synthesizer 24 if the output branching unit is 54 wide.

[0067] As described above, 24 different configurations can be selected as the configuration of the distributor / synthesizer according to the size of the insulation resistance 56 or the arrangement method of the phase setting unit 55. <Erstes Strukturbeispiel eines Verteilers / Synthetisierers>

[0068] Next, with reference to Fig. 5 and Fig. 6 the first structure of the distributor / synthesizer 24 described.

[0069] Fig. Figure 5 is a top view that schematically shows a structural example of the distributor / synthesizer 24. Fig. Figure 6 is a top view schematically showing an example of the layer structure of the distributor / synthesizer 24. The same reference numbers are used in the Fig. 5 and Fig. The configurations shown in 6 are the same as those listed above. This is similar to... Fig. 11 and the following drawings, as will be described later.

[0070] Fig. 5 and Fig. Figure 6 shows an example in which the distributor / synthesizer 24 is configured as a quadrant distributor / synthesizer with a multilayer substrate structure containing three wiring layers, forming layers 1 through 3 from the bottom and a GND layer 81 in sequence. The GND layer 81 is located between the first and second layers.

[0071] In the example of the Fig. 5 and Fig. The phase adjustment units 55-1 to 55-4 are configured as phase adjustment lines 61-1 to 61-4. Furthermore, the external transmission line connected to the input and output line 51 is configured as input transmission line 62, and the external transmission lines connected to the input and output terminals 58-1 to 58-4 are configured as output transmission lines 63-1 to 63-4.

[0072] Each wiring connection is achieved, for example, through a copper structure on a Type 4 (FR4) flame-retardant substrate. A via is used for wiring connections between layers.

[0073] In the following, the phase adjustment lines 61-1 to 61-4 will be referred to collectively as the phase adjustment line 61, and the output transmission lines 63-1 to 63-4 will be referred to collectively as the output transmission line 63, unless it is particularly necessary to distinguish between them.

[0074] In the example of Fig. In section 5, the input branch unit 52 and the coupling terminal 57 are arranged at the same position in different layers. The phase-adjusting line 61 is configured to connect from the input branch unit 52 to the output branch unit 54 via a substantially parabolic path, such that the length from the input branch unit 52 to the output branch unit 54 is λ / 2 or an integer multiple thereof, where λ is the wavelength of the signal.

[0075] Note that in the distributor / synthesizer 24 it is designed such that the magnitude of a phase rotation in the path indicated by arrow #11 from the output branching unit 54 to the coupling terminal 57, which includes the phase adjustment line 61 and the insulation resistance 56, is π [rad] or a real number times π [rad].

[0076] In the cross-sectional structure of Fig. 6 is part of the path of the input transmission line 62 in the first layer, which is the lowest layer. The input transmission line 62 is formed by part of the path arranged in the first layer and the VIA 71. The input transmission line 62 is connected via the VIA 71 to the distribution line 53 of the second layer at the input branching unit 52.

[0077] In the second layer, part of the path of distribution line 53 is arranged. Distribution line 53 is formed by a portion of the path located in the second layer and the VIA 72. Distribution line 53 is connected via the VIA 72 to the phase adjustment line 61 and the output transmission line 63 of the third layer at the output branching unit 54.

[0078] In the third layer, which is the topmost layer, the output transmission line 63, the phase adjustment line 61, the coupling connection 57 and the insulation resistor 56 are arranged.

[0079] As described above, at least one of the distribution line 53 or the phase adjustment line 61 contains one or more structures (such as VIA) that connect different levels (layers). Furthermore, the input branch unit 52 and the coupling terminal 57 are located on different levels (layers).

[0080] As in Fig. As shown in Figure 6, the input branch unit 52 and the coupling terminal 57 are located on the same vertical line. Moreover, as shown in Fig. As shown in Figure 5, the distribution lines 53-1 to 53-4, the phase adjustment lines 61-1 to 61-4, and the insulation resistors 56-1 to 56-4 are arranged symmetrically four times with the vertical line as the axis. Note that n-fold symmetry means an arrangement that has the same shape even when rotated by 360 / n°.

[0081] Fig. Figure 7 is an equivalent circuit diagram of the distributor / synthesizer 24 in the case where the configuration of the Fig. 5 and Fig. 6 is taken over.

[0082] Here, as in Fig. As shown in Figure 7, the input and output impedance is 50 Ω, and the characteristic impedance of the distribution line 53 and the phase adjustment unit 55, as well as the phase adjustment line 61, is 100 Ω. Furthermore, the resistance value of the insulation resistance 56 is 50 Ω. Assuming in this case that the wavelength of the signal is λ, the path length from the input branch unit 52 to the output branch unit 54 is λ / 4, and the path length from the output branch unit 54 to the coupling terminal 57 is λ / 2.

[0083] For example, since λ / 2 in a 30 GHz high-frequency signal is approximately 2.5 mm on the FR4 substrate, a high-frequency chip resistor of size 0603 (0.6 mm length) or similar can be used as the insulation resistor 56. A thin-film resistor or ink resistor produced using vapor deposition can be used as the insulation resistor 56. <simulationsergebnisse>

[0084] Fig. 8 and Fig. 9 are diagrams showing simulation results in the case of the equivalent circuit of Fig. Show 7.

[0085] In Fig. 8 and Fig. 9 correspond to Port1, Port2 and Port3 to input and output port 51, input and output port 58-1 and input and output port 58-2 respectively.

[0086] In Fig. Figure 8 shows the horizontal axis as the frequency, and the vertical axis shows the passband characteristic of the signal at each frequency. In the example of Fig. Figure 8 is the passband characteristic at the frequency of the path passing through input and output terminal 51 (Port 1) to input and output terminal 58-1 (Port 2), indicated by a dashed line, and the passband characteristic at the frequency of the path passing through input and output terminal 58-1 (Port 2) to input and output terminal 51 (Port 1) is indicated by a solid line. The first passband characteristic indicated by the dashed line overlaps the second passband characteristic indicated by the solid line.

[0087] As in Fig. As shown in Figure 8, the passband characteristics in the band from 25 GHz to 36 GHz are almost flat, and it can be seen that both passband characteristics preferentially lie in a wide band during distribution and synthesis.

[0088] In Fig. In figure 9, the horizontal axis represents the frequency, and the vertical axis represents the characteristics of the signal at each frequency. In the example of Fig. Figure 9 shows the isolation characteristic between Port 2 and Port 3, indicated by a solid line. Furthermore, the reflection characteristic of Port 1 is indicated by a dashed line, and the reflection characteristic of Port 2 is indicated by alternating long and short dashed lines.

[0089] As in Fig. As shown in Figure 9, all characteristics in a bandwidth of 4 GHz centered on 30 GHz are -20 dB or less.

[0090] As shown in the simulation results above, Fig. 8 and Fig. As shown in Figure 9, the distributor / synthesizer 24 exhibits the necessary and sufficient characteristics as a quadrant distributor. Furthermore, the distributor / synthesizer 24 also exhibits the necessary and sufficient characteristics as a quadrant synthesizer.

[0091] Furthermore, in the Fig. In the conventional quadrant distributor shown in Figure 10, which is arranged on a substrate, the length between the input and output is λ / 2; but according to the present technology, the length of the input and output from the input branching unit 52 to the output branching unit 54 is λ / 4, so that it can be said that the size is small and the loss is low.

[0092] In a case where the number of distributions is increased, for example, to eight distributions, the path is further extended, and the length between the input and output in the conventional eight-equal distributor arranged on the substrate is 3λ / 4. When using the present technology, it is sufficient if the length is λ / 4, similar to the case of a four-way distribution. <Zweites Strukturbeispiel eines Verteilers / Synthetisierers>

[0093] Next, with reference to Fig. 11 and Fig. 12 the second structure of the distributor / synthesizer 24 described.

[0094] Fig. Figure 11 is a top view showing a schematic structural example of the distributor / synthesizer 24. Fig. Figure 12 is a cross-sectional view that schematically shows an example of the layer structure of the distributor / synthesizer 24.

[0095] Fig. 11 and Fig. Figure 12 shows an example in which the distributor / synthesizer 24 is configured as an eight-equal or eight-way distributor / synthesizer with a multilayer substrate structure. Starting from the bottom, this structure comprises three wiring layers forming the first to third layers and two layers of a ground layer 81 and a ground layer 91 in succession. The ground layer 81 is located between the first and second layers. The ground layer 91 is located between the second and third layers.

[0096] In the example of the Fig. 11 and Fig. The phase adjustment units 55-1 to 55-8 are configured as phase adjustment lines 61-1 to 61-8. Furthermore, the external transmission line connected to input and output terminal 51 is configured as input transmission line 62. The external transmission lines connected to input and output terminals 58-1 to 58-8 are configured as output transmission lines 63-1 to 63-8.

[0097] Each wiring connection is achieved, for example, through a copper structure on the FR4 substrate. Furthermore, a via is used for wiring connections between layers.

[0098] In the following, the phase adjustment units 55-1 to 55-8 are referred to collectively as phase adjustment unit 55, and the input and output connections 58-1 to 58-8 are referred to collectively as input and output connection 58, unless it is particularly necessary to distinguish between them. The phase adjustment lines 61-1 to 61-8 are referred to collectively as phase adjustment line 61, and the output transmission lines 63-1 to 63-8 are referred to collectively as output transmission line 63.

[0099] In Fig. In Figure 11, the input branch unit 52 and the coupling terminal 57 are arranged at the same position in different layers. The phase-adjusting line 61 is configured to connect the input branch unit 52 to the output branch unit 54 via a substantially parabolic path, such that the length from the input branch unit 52 to the output branch unit 54 is λ / 2 or an integer multiple thereof, where λ is the wavelength of the signal.

[0100] In the cross-sectional structure of Fig. 12 is part of the path of the input transmission line 62 in the first layer, which is the lowest layer. The input transmission line 62 is formed by a part of the path located in the first layer and the VIA 71. The input transmission line 62 is connected via the VIA 71 to the distribution line 53 of the second layer at the input branching unit 52.

[0101] In the second layer, part of the path of distribution line 53 is arranged. Distribution line 53 is formed by a portion of the path located in the second layer and the VIA 72. Distribution line 53 is connected via the VIA 72 to the phase adjustment line 61 and the output transmission line 63 of the third layer at the output branching unit 54.

[0102] In the third layer, which is the topmost layer, the output transmission line 63, the phase adjustment line 61, the coupling connection 57 and the insulation resistor 56 are arranged.

[0103] As described above, at least one of the distribution line 53 or the phase adjustment line 61 contains one or more structures (such as a VIA) that connect different levels (layers), and the input branching unit 52 and the coupling terminal 57 are located on different levels (layers).

[0104] As in Fig. As shown in Figure 12, the input branch unit 52 and the coupling terminal 57 are located on the same vertical line. Moreover, as shown in Fig. Figure 11 shows the distribution lines 53-1 to 53-8, the phase adjustment lines 61-1 to 61-8 and the insulation resistors 56-1 to 56-8 arranged symmetrically eight times with the vertical line as the axis.

[0105] In the case of the Fig. 11 and Fig. 12, if the input and output impedance is 50 Ω, the characteristic impedance of the distribution line 53 is equal to 141.4 Ω, and the resistance value of the insulation resistance is equal to 50 Ω.

[0106] As described above, by placing the GND layer 91 between the wiring of the second and third layers, the capacitive coupling between these wiring layers can be eliminated. As a result, the impedance of the wiring is stabilized, and a distributor / synthesizer with improved characteristics can be achieved.

[0107] Furthermore, even if the wiring structures of the second layer and the third layer overlap, no impedance mismatch occurs, so that a configuration with a distribution number exceeding four divisions can be easily created. <Drittes Strukturbeispiel eines Verteilers / Synthetisierers>

[0108] Next, with reference to the Fig. 13 and Fig. 14 the third structure of the distributor / synthesizer 24 described.

[0109] Fig. Figure 13 is a top view showing a schematic structural example of the distributor / synthesizer 24. Fig. Figure 14 is a cross-sectional view that schematically shows an example of the layer structure of the distributor / synthesizer 24.

[0110] Fig. 13 and Fig. Figure 14 shows an example in which a GND via (grounding via) connected to the GND layer 81 is located in the vicinity of the via connecting the second layer and the third layer in the first structure of the distributor / synthesizer 24. Fig. 5 and Fig. 6 connects. In the example of the Fig. 13 and Fig. 14 will be, since the structure is the same as the first structure of the Fig. 5 and Fig. 6, except that the GND-VIA is arranged, its description is omitted.

[0111] As in Fig. As shown in Figure 13, two GND-VIA 101-1 devices are arranged in a position that sandwiches around VIA 72-1 in the center. Two GND-VIA 101-2 devices are arranged in a position that sandwiches around VIA 72-2 in the center. Two GND-VIA 101-3 devices are arranged in a position that sandwiches around VIA 72-3 in the center. Two GND-VIA 101-4 devices are arranged in a position that sandwiches around VIA 72-4 in the center.

[0112] By configuring as described above, an impedance mismatch due to a VIA can be mitigated, so that reflection at a VIA can be suppressed and passband characteristics can be improved.

[0113] In the examples of Fig. 13 and Fig. In section 14, the example was described in which the GND VIA 101 is located near the VIA 72, which connects the second and third layers. However, the GND VIA 101 can also be located near the VIA 71, which connects the first and second layers. <Viertes Strukturbeispiel eines Verteilers / Synthetisierers>

[0114] Next, with reference to Fig. 15 and Fig. 16 the fourth structure of the distributor / synthesizer 24 described.

[0115] Fig. Figure 15 is a top view showing a schematic structural example of the distributor / synthesizer 24. Fig. Figure 16 is a cross-sectional view that schematically shows an example of the layer structure of the distributor / synthesizer 24.

[0116] Fig. 15 and Fig. Figure 16 shows examples in which the layer structure of the distributor / synthesizer 24 of the Fig. 5 and Fig. 6 has been changed. In the example of the Fig. 15 and Fig. 16 will be, since the structure is the same as the structures of Fig. 5 and Fig. Version 6, apart from the change in layer structure, has its description omitted.

[0117] The distributor / synthesizer 24 of the Fig. 15 and Fig. 16 is from the distributor / synthesizer 24 of the Fig. 5 and Fig. 6 differs in that the input transmission lines 62-1 to 62-4 are replaced by the input transmission lines 121-1 to 121-4, the output transmission lines 63-1 to 63-4 are replaced by the output transmission lines 122-1 to 122-4, and the distribution lines 53-1 to 53-4 are replaced by the distribution lines 123-1 to 123-4. The distributor / synthesizer 24 of the Fig. 15 and Fig. In other respects, the 16 is the same as the distributor / synthesizer 24. Fig. 5 and Fig. 6.

[0118] In the following, the input transmission lines 121-1 to 121-4 will be referred to collectively as input transmission line 121, the output transmission lines 122-1 to 122-4 will be referred to collectively as output transmission line 122, and the distribution lines 123-1 to 123-4 will be referred to collectively as distribution line 123, unless it is particularly necessary to distinguish between them.

[0119] Fig. 15 and Fig. Figure 16 shows an example in which the distributor / synthesizer 24 is configured as a quadrant distributor / synthesizer with a multilayer substrate structure. Starting from the bottom, this structure comprises three wiring layers forming the first to third layers, and two consecutive layers of a ground layer 81 and a ground layer 91. The ground layer 81 is located between the first and second layers. The ground layer 91 is located between the second and third layers.

[0120] In Fig. In Figure 15, the input branch unit 52 and the coupling terminal 57 are arranged at the same position in different layers. The phase-adjusting line 61 is configured to connect the input branch unit 52 to the output branch unit 54 via a substantially parabolic path, such that the length from the input branch unit 52 to the output branch unit 54 is λ / 2 or an integer multiple thereof, where λ is the wavelength of the signal.

[0121] In the cross-sectional structure of Fig. 16. Parts of the paths of the coupling terminal 57, the insulation resistor 56, and the phase-setting line 61 are arranged in the first layer, which is the lowest layer. The phase-setting line 61 comprises part of the path and a path connecting the first and second layers. The phase-setting line 61 is connected to the output transmission line 122 of the second layer at the output branch unit 54 via a path connecting the first and second layers.

[0122] In the second layer, part of the path of the incoming transmission line 121 and the outgoing transmission line 122 are configured as striplines. The incoming transmission line 121 comprises part of the path and a path connecting the third and second layers. The incoming transmission line 121 is connected to the distribution line 123 of the third layer at the incoming branch unit 52 via a path connecting the third and second layers.

[0123] In the third layer, part of the path of distribution line 123 is formed by a microstrip line. Distribution line 123 includes part of the path and a through-hole that connects the third layer and the second layer. Distribution line 123 is connected to the output transmission line 122 of the second layer via the through-hole at the output branch unit 54.

[0124] Both the input transmission line 121 and the output transmission line 122 often assume a value of 50 Ω. On the other hand, the distribution line 123 requires a higher characteristic impedance than the input transmission line 121 and the output transmission line 122, so the distribution line assumes a value of 100 Ω in four distributions. If the transmission lines are mounted on the same plane, the design may have a line width that is difficult to achieve.

[0125] Therefore, the distributor / synthesizer contains 24 of the Fig. 15 and Fig. 16. The input transmission line 121 and the output transmission line 122 are designed with striplines, which tend to have a relatively low impedance. The distribution line 123 can be designed with a microstripline having a higher impedance than the stripline, compared to the same line width. As described above, a design with a sufficiently achievable line width can be created.

[0126] Although the case in which the phase adjustment unit 55 is configured as the phase adjustment line 61 has been described above, the phase adjustment unit 55 can be configured as follows. <Konfigurationsbeispiel einer Phaseneinstelleinheit>

[0127] Fig. Figure 17 is a block diagram showing a configuration example of the phase adjustment unit 55.

[0128] The phase adjustment unit 55 from Fig. 17 contains a transmission line 151 with an arbitrary amount θ of a phase shift and a delay circuit containing a lumped constant.

[0129] A of Fig. Figure 17 shows an example in which the concentrated constant is a high-pass filter (HPF) 152 containing capacitors 161-1 and 161-2 and an inductor 162.

[0130] B of Fig. Figure 17 shows an example in which the concentrated constant is a low-pass filter (LPF) 153 containing coils 171-1 and 171-2 and a capacitor 172.

[0131] In the phase adjustment unit 55, the impedance characteristic Z2 of the transmission line 151 can be arbitrary, and the matching can be carried out by selecting a value of a lumped constant for any θ.

[0132] Even in a case where the transmission line 151 of the phase adjustment unit 55 cannot be set to a length with an amount of phase rotation of π [rad] or a real number times π [rad], the phase can be set to π [rad] or a real number times π [rad] by adding a delay circuit utilizing a lumped constant of an LC.

[0133] Note that the phase adjustment unit 55 is not limited to the one described above and can be any unit as long as it adjusts the phase and can be a phase shifter.

[0134] As described above, in the present technology the phase adjustment unit, which is connected in series with the resistor, is designed in such a way that, even if the size of the VIA or the resistor is not sufficiently small with respect to the wavelength, a design that does not impair the isolation characteristics is possible.

[0135] Furthermore, according to the present technology, since the phase adjustment unit has a size, the degree of freedom in the assembly of the insulation resistance is increased, so that it can be mounted on the substrate with a reasonable structure.

[0136] Furthermore, a distributor / synthesizer with three or more distributions can achieve further miniaturization and lower loss than a multi-distributor / synthesizer in which the Fig. 10 conventional Wilkinson double distributors are connected in tournament circuitry.

[0137] The present technology is also used for a distributor / synthesizer, a distributor and a synthesizer, and a mobile phone, a smartphone, a tablet device, a personal computer, a mobile device, and the like, which contain these.

[0138] While preferred embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the disclosure is not limited to such examples. It is obvious that various variations and modifications within the scope of the technical idea described in the claims can be conceived by a person skilled in the art in the field of technology to which the present disclosure belongs, and it is naturally understood that these variations and modifications fall within the technical scope of the present disclosure. REFERENCE MARK LIST 11 Transmission and Receiving Unit 21-1, 21-2 Amplifiers 22-1, 22-2 Filter 23 switches 24 distributors / synthesizers 25-1 to 25-4 phase shifter 26-1 to 26-4 antenna 51 Input and output connection 52 Input branch unit 53, 53-1 to 53-8 Distribution line 54 Output branch unit 55, 55-1 to 55-8 Phase setting unit 56, 56-1 to 56-8 Insulation resistance 57 Coupling port 58, 58-1 to 58-8 Input and output connection 61, 61-1 to 61-8 Phase setting line 62 Input transmission line 63, 63-1 to 63-8 Output transmission line 71, 72 VIA 81 GND layer 91 GND layer 101, 101-1 to 101-4 GND-VIA 121 Input transmission line 122 Output transmission line 123, 123-1 to 123-4 Distribution line 151 Distribution line 152 HPF 153 LPF 161-1 and 161-2 capacitor 162 Coil 171-1 and 171-2 coil 172 Capacitor< / simulationsergebnisse>

Claims

[1] Distributor formed on a substrate and comprising: an input branching unit (52) connected to an external transmission line on an input side of the distributor; n distribution lines (53) connected to the input branching unit (52) to distribute a path entering the input branching unit (52) into n paths; an output branching unit (54) that divides each of the n paths on the output side of the n distribution lines into an internal path and an external transmission line on an output side of the distributor; a coupling terminal that couples the n internal paths together; and n phase adjustment units (55) arranged between the output branching unit (54) and the coupling terminal (57) such that they are connected in series with a resistor (56) in each of the n internal paths and are suitable for adjusting a phase, wherein the magnitude of a phase shift from the input branch unit (52) to the output branch unit (54) in each of the n paths is π / 2 [rad], and an amount of phase shift from the output branching unit (54) to the coupling terminal (57) in each of the n internal paths π [rad] or a real number times π [rad]; where if an input impedance Z in is, an output impedance Z out where is a distribution number n, a characteristic impedance Z1 of each distribution line is given by √ (n Z in Z out ) is designed, and a resistance value R of each resistor (56) as Z out is designed; and a characteristic impedance Z2 of each phase adjustment unit (55) is designed such that it is within a range of Z out / 2 ≤ Z2 ≤ 2 * Z out lies. [2] Distributor according to claim 1, wherein each phase adjustment unit (55) is arranged between the output branching unit (54) and the resistor (56). [3] Distributor according to claim 1, wherein each phase adjustment unit (55) is arranged between the resistor (56) and the coupling terminal (57). [4] Distributor according to claim 1, wherein each phase adjustment unit (55) comprises a first phase adjustment unit connected to the output branching unit (54) and a second phase adjustment unit connected to the coupling terminal (57), and the resistor (56) is arranged between the first phase adjustment unit and the second phase adjustment unit. [5] Distributor according to any of the preceding claims, wherein each phase adjustment unit (55) is reached by a phase adjustment line the length of which from the input branch unit (52) to the output branch unit (54) is λ / 2 or an integer multiple of λ / 2, with λ being the wavelength of the distributed signal. [6] Distributor according to any of the preceding claims, wherein at least the distribution lines (53) or the phase adjustment units (55) contain one or more structures connecting different levels, and the input branching unit (52) and the coupling terminal (57) are located on different levels. [7] Distributor according to claim 6, wherein the input branching unit (52) and the coupling terminal (57) are on the same vertical line, and the distribution lines (53), the phase adjustment units (55) and the resistors are arranged n-fold symmetrically around the vertical line. [8] Synthesizer formed on a substrate and comprising the structure of a distributor according to any one of claims 1 to 7; wherein the n external transmission lines on the output side of the distributor constitute n inputs of the synthesizer and the external transmission line on the input side of the distributor constitutes the output of the synthesizer.

Citation Information

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