Method for manufacturing a diamond substrate or a III-V material for microelectronic applications

Abstract

The invention relates to a method for manufacturing a diamond substrate, or a III-V material, for microelectronic applications, comprising: - bonding a plurality of diamond chips (20), or of the single-crystal III-V material, to a support substrate (1), each chip being spaced apart from adjacent chips so as to expose a lateral surface (S2) of each chip, - epitaxial growth of diamond, or of the III-V material, from the lateral and upper surfaces of each chip, until a continuous layer (2) of single-crystal diamond, or of the III-V material, extending over the plurality of chips (20) is formed, - the formation, by implantation of atomic species, of a weakened zone (21) in the continuous layer (2) of single-crystal diamond, or of the III-V material, to delimit a surface layer (22) to be transferred, - bonding the continuous layer (2) of diamond,respectively of the III-V, single-crystal material on a receiving substrate (3), - the detachment of the continuous layer (2) of diamond, respectively of the III-V, single-crystal material along the embrittlement zone (21) so as to transfer the surface layer (22) of diamond, respectively of the III-V, single-crystal material onto the receiving substrate (3), to form said diamond substrate, respectively of the III-V material. Figure for the abstract: Fig. 4,

Description

Title of the invention: Method for manufacturing a diamond substrate or a III-V material for microelectronic applications Technical field

[0001] The invention relates to a method for manufacturing a diamond substrate or a III-V material for microelectronic applications, in particular for power applications. State of the art

[0002] Diamond is of growing interest for applications in microelectronics, particularly for power applications.

[0003] Indeed, diamond has a thermal conductivity of up to 2200 W / K / m (i.e. 5 times the thermal conductivity of copper), which makes it particularly interesting for fulfilling a heat sink function.

[0004] Furthermore, diamond can also be considered as a material of choice for power electronics thanks to a very large band gap, a high breakdown voltage, a low threshold voltage and a high mobility of the electric charge carriers.

[0005] It thus becomes possible to apply strong electric currents and high electric voltages to a diamond substrate more efficiently and quickly than to other wide band gap materials without resorting to a cooling system.

[0006] However, a pitfall encountered in the fabrication of single-crystal diamond substrates is the formation of dislocations, which affect the electronic properties by creating energy levels in the band gap.

[0007] To use a diamond substrate in power electronics, it is necessary to dope it, to obtain a low dislocation density and to work in dimensions compatible with microelectronics equipment, which are currently adapted for substrates with a diameter of 150 mm, 200 mm or 300 mm.

[0008] Methods for reducing the dislocation density in a diamond substrate using lateral epitaxial growth of diamond (known as ELOG, an acronym for the English term "Epitaxial Lateral OverGrowth") have already been described.

[0009] Document WO 2014 / 045220 thus describes a treatment of a diamond single crystal comprising etching the surface of the single crystal on the areas with high dislocation density, the formation of localized metal islands at the level of the area etched and a resumption of diamond epitaxy on the areas with low dislocation density. The metal islands help to block the dislocations and prevent their propagation in the diamond epitaxial layer.

[0010] Document US 2012 / 0214856 describes a method in which single-crystal diamond tiles are deposited on a larger diamond support substrate of lower crystal quality, with alignment of the crystal lattices of the substrate and the tiles, a metal mask is deposited on the surface of the support substrate in order to promote epitaxial growth of diamond from the lateral surface of the tiles, and resumption of diamond epitaxy.

[0011] However, these methods have the disadvantage of being limited to substrates of small diameter, less than the diameter required for microelectronics equipment, and of involving the presence of metal which is likely to contaminate the surface of the substrate and is therefore not compatible with the requirements relating to the contamination rate in microelectronics.

[0012] The dislocation density obtained by these processes is of the order of 105 cm2, which remains to be improved.

[0013] To tend towards a dislocation density lower than 104 cm2, other methods also favor lateral epitaxial growth but on the basis of hollows and elevations created in a starting diamond substrate.

[0014] Document FR 3022563 proposes forming an alternation of hollows and elevations on the starting substrate by successive etching steps: firstly, a light etching of the surface revealing the work-hardened areas with high dislocation densities, a masking of the good quality areas (corresponding to the elevations) carried out with a photosensitive resin, then a deep etching in the hollows. Lateral epitaxial growth is then favored from these hollows.

[0015] Document FR 3038917 proposes to make a through opening in the center of a diamond single crystal to promote lateral growth for which the propagation of dislocations is inhibited. This method involves a step of growth and coalescence of the diamond located above the through opening, which is the area where the best crystalline quality is obtained.

[0016] However, even if metallic contamination is avoided, these methods are penalized by a small dimension of the starting substrate and a high cost.

[0017] The problem set out above extends to the manufacture of substrates of III-V materials, such as gallium nitride (GaN), indium phosphide (InP) or gallium arsenide (AsGa), due to the availability of these materials in the form of small diameter substrates. Summary of the invention

[0018] An aim of the invention is therefore to design a method for manufacturing a diamond substrate or a III-V material whose crystalline quality and dimensions are suitable for microelectronics, in particular for power applications.

[0019] To this end, the invention proposes a method for manufacturing a diamond substrate, respectively a III-V material for microelectronic applications, comprising:

[0020] - bonding a plurality of diamond paving stones, respectively of III-V material monocrystalline on a support substrate, each tile being spaced from adjacent tiles, so as to expose a lateral surface of each tile,

[0021] - the epitaxial growth of diamond, respectively of III-V material, from the side surface and the upper surface of each paving stone, until forming a continuous layer of diamond, respectively of III-V material, monocrystalline extending over the plurality of paving stones,

[0022] - the formation, by implantation of atomic species, of a weakening zone in the continuous layer of diamond, respectively of III-V material, monocrystalline, to delimit a surface layer to be transferred,

[0023] - the bonding of the continuous layer of diamond, respectively of the III-V material, mo nocrystalline on a receiving substrate,

[0024] - the detachment of the continuous diamond layer, respectively of the material III- V, monocrystalline along the weakening zone so as to transfer the surface layer of diamond, respectively of the III-V material, monocrystalline onto the receiving substrate, to form said diamond substrate, respectively of the III-V material.

[0025] The use of diamond or III-V monocrystalline material slabs makes it possible to overcome the size limits of diamond or III-V material substrates present on the market, while making it possible to form a substrate of a size compatible with microelectronic applications, the size of the substrate being determined by the size of the support substrate and / or the receiving substrate.

[0026] Furthermore, the method avoids the use of metal likely to contaminate the surface of the diamond substrate or III-V material, thus making it possible to be compatible with the requirements of microelectronics in terms of contamination.

[0027] Finally, the entire support substrate and the remainder of the continuous layer of diamond or monocrystalline III-V material can be recycled for the formation of new diamond or III-V material substrates, which makes the process economically advantageous.

[0028] In a particularly advantageous manner, the method further comprises, after the formation of the continuous layer on the plurality of paving stones, a sequence of steps successively comprising:

[0029] - polishing of said continuous layer,

[0030] - a first etching of the polished surface of said continuous layer so as to reveal areas with a higher density of crystalline defects, located opposite the paving stones,

[0031] - the deposition of a photosensitive resin mask on the surface of said layer continues so as to mask the unengraved areas,

[0032] - a second engraving, deeper than the first engraving, of the exposed areas by the mask,

[0033] - a resumption of lateral epitaxial growth from the walls of the etched areas.

[0034] In some embodiments, said sequence is repeated at least once.

[0035] In particular, said sequence is advantageously implemented as many times as necessary to obtain a dislocation density less than or equal to 104 cm2 in the continuous layer of diamond, respectively of the III-V material, monocrystalline.

[0036] The continuous layer of diamond, respectively of III-V material, monocrystalline typically has a thickness greater than or equal to 1 μm.

[0037] The surface layer of diamond, respectively of the IILV material, monocrystalline transferred onto the receiving substrate generally has a thickness of between 100 nm and 1 pm.

[0038] In a particularly advantageous manner, the distance between two adjacent blocks is between 300 pm and 2 cm, preferably between 500 pm and 2.5 mm.

[0039] Each block can have a width of between 3 mm and 2 cm.

[0040] The receiving substrate and / or the support substrate advantageously has a diameter greater than 100 mm.

[0041] The receiving substrate and / or the support substrate comprises silicon, silicon carbide, sapphire or quartz.

[0042] In some embodiments, the diamond slabs, respectively of the IILV material, monocrystalline are formed by a chemical vapor deposition process.

[0043] The method may further comprise, after the transfer of the surface layer of diamond, respectively of the IILV material, monocrystalline onto the receiving substrate:

[0044] - polishing of the remainder of the continuous diamond layer, respectively of the IILV material, monocrystalline extending over the plurality of blocks,

[0045] - the formation, by implantation of atomic species, of a weakening zone in the continuous layer of diamond, respectively of the IILV material, monocrystalline, to delimit a new surface layer to be transferred,

[0046] - the bonding of the continuous diamond layer, respectively of the IILV material, mo nocrystalline on a new receiving substrate,

[0047] - the detachment of the continuous diamond layer, respectively of the material III- V, monocrystalline along the weakening zone so as to transfer the new surface layer of diamond, respectively of the IILV material, monocrystalline onto the new receiving substrate, to form a new diamond substrate, respec- tively of III-V material.

[0048] Optionally, between the polishing of the remainder of the continuous layer of diamond, respectively of the III-V material, monocrystalline and the formation of the weakening zone, a resumption of the epitaxy of diamond, respectively of the III-V material, can be implemented to thicken said continuous layer of diamond, respectively of the III-V material, monocrystalline. Brief description of the figures

[0049] Other characteristics and advantages of the invention will emerge from the detailed description which follows, with reference to the appended drawings, in which:

[0050] - [Fig.l] is a schematic sectional view of the bonding of diamond or single-crystal III-V material on a support substrate;

[0051] [Fig.2A]

[0052] [Fig.2B]

[0053] [Fig.2C]

[0054] - Figures 2A to 2C are schematic sectional views of the epitaxial growth of diamond or III-V material from the side surface and top surface of the pavers to form a continuous layer of single crystal diamond or III-V material on the pavers;

[0055] - [Fig.3] is a schematic sectional view of the formation of a fragile zone lization in the continuous layer of diamond or monocrystalline III-V material;

[0056] - [Fig.4] is a schematic sectional view of the bonding of the continuous layer of diamond or III-V monocrystalline material on a receiving substrate;

[0057] - [Fig.5] is a schematic sectional view of the detachment of the continuous layer of diamond or III-V monocrystalline material along the embrittlement zone;

[0058] - [Fig.6] is a schematic sectional view of the remainder of the continuous layer of diamond or III-V material on the support substrate after detachment;

[0059] - [Fig.7] is a schematic sectional view of a new epitaxial growth of diamond or III-V material on the remainder of the continuous layer of diamond or III-V material after detachment;

[0060] - [Fig.8A] is a schematic sectional view of the result of a first engraving of the surface of the continuous layer of diamond or monocrystalline III-V material;

[0061] - [Fig.8B] is a schematic sectional view of the deposition of a mask on the layer continuous diamond or III-V monocrystalline material;

[0062] - [Fig.8C] is a schematic sectional view of the result of a second etching of the surface of the continuous layer of diamond or III-V monocrystalline material through the mask;

[0063] - [Fig.8D] is a schematic sectional view of a diamond epitaxy resumption or III-V material on the etched surface of the continuous layer of diamond or monocrystalline III-V material.

[0064] For reasons of readability of the figures, the different elements are not necessarily drawn to scale. Reference signs that are identical from one figure to another designate elements that are identical or fulfill the same function. Detailed description of embodiments

[0065] The invention proposes to use blocks of monocrystalline diamond or of a monocrystalline III-V material to form, on a substrate of a size adapted to the desired use, a continuous layer of diamond or of the III-V material of good quality and compatible with the microelectronics environment.

[0066] For this purpose, as illustrated in [Fig. 1], a plurality of diamond or III-V material blocks 20 are arranged on a support substrate 1. In the remainder of the description, diamond will be referred to for the sake of brevity, but the description applies similarly to any III-V material, binary, tertiary or other more complex alloy. For example, said III-V material may be gallium nitride (GaN), indium phosphide (InP) or gallium arsenide (AsGa).

[0067] The tiles are taken from a single crystal diamond donor substrate. For example, the tiles are cut by any suitable means, such as a saw, laser, water jet, etc., from the donor substrate.

[0068] The paving stones advantageously have a thickness e equal to that of the donor substrate. For example, diamond substrates having a thickness between 0.3 and 2 mm are commercially available, but any other thickness could be suitable.

[0069] The pavers may advantageously have a rectangular or square shape, but any other shape may be suitable. An advantage of the rectangular or square shape is that the pavers can be placed so that their edges are parallel to each other, which ensures a constant distance between the pavers.

[0070] The width of the tiles (i.e. their main dimension in a plane perpendicular to the surface of the support substrate) is chosen to allow manipulation of the tiles and their transfer from the donor substrate to the support substrate, but also to ensure a compromise between the surface covered by the tiles on the support substrate and the accessible surface on the edge of the tiles for lateral epitaxial growth. The tiles can thus have a width L of between 3 mm and 2 cm.

[0071] The support substrate fulfills a mechanical support function for the tiles, in particular during the epitaxy resumption and etching steps which will be described below.

[0072] For this purpose, the support substrate advantageously has a coefficient of thermal expansion (CTE, acronym for the Anglo-Saxon term “Coefficient of Thermal Expansion") close to that of the diamond forming the paving stones. By "close" we mean a coefficient of thermal expansion of the support substrate such that, during the cooling which follows the epitaxy allowing the continuous layer of diamond to be formed from the paving stones, it does not generate mechanical stresses in said layer.

[0073] Advantageously, the support substrate has a diameter suitable for power microelectronics equipment, which is typically greater than 100 mm. Preferably, the diameter of the support substrate is of the order of 150 mm, 200 mm or 300 mm. The diameter of the support substrate is generally greater than that of the donor substrate.

[0074] Silicon is a particularly suitable material for forming the support substrate. Indeed, it has a coefficient of thermal expansion compatible with that of diamond and certain III-V materials, and it is available in the form of large diameter substrates, so that it is particularly suitable for microelectronic equipment. However, those skilled in the art may use any other suitable material for the support substrate, for example silicon carbide (SiC), sapphire, quartz, in monocrystalline or polycrystalline form.

[0075] Preferably the paving stones are arranged directly on the support substrate and adhere to it by molecular adhesion, but an intermediate bonding layer may optionally be used.

[0076] The paving stones are arranged on the support substrate, leaving a free space between two adjacent paving stones. When they are in place on the support substrate, the paving stones therefore have two free surfaces: an upper surface S1, which is the surface opposite the support substrate, parallel to the main surface of the support substrate, and a lateral surface S2, which extends over the edges of the paving stones, perpendicular to the support substrate.

[0077] Since the tiles are distant from each other, a resumption of epitaxy (i.e. epitaxy of the same material as that of the tiles) causes lateral growth, substantially parallel to the surface of the support substrate, from the lateral surface of the tiles. As indicated below, such lateral growth is more favorable to the crystalline quality than vertical growth, i.e. perpendicular to the surface of the support substrate.

[0078] The distance d between two adjacent paving stones is therefore advantageously chosen to be as large as possible while allowing coalescence of the diamond islands growing from the lateral surface of the paving stones with blocking of the dislocations. Thus, the distance between two adjacent paving stones is typically between 300 pm and 2 cm, preferably between 500 pm and 2.5 mm.

[0079] In [Fig. 1], the paving stones are all shown with the same width and the same distance between paving stones, which allows in particular to arrange the paving stones in the form of a grid with the tiles aligned in two perpendicular directions of the supporting substrate to form a plurality of parallel rows and columns, but it would be possible to have tiles of different shapes or sizes, and arranged at different distances.

[0080] The support substrate on which the tiles are arranged is then placed in an epitaxy frame.

[0081] In said frame, temperature conditions and an atmosphere having a chemical composition suitable for epitaxial growth of diamond (or III-V material where appropriate) are used. A person skilled in the art is able to determine the appropriate conditions depending on the material to be grown.

[0082] Figures 2A to 2C schematically illustrate different phases of the epitaxial growth of diamond on the structure of [Fig.l].

[0083] In a first phase ([Fig.2A]), diamond islands 201, respectively 202 grow on the upper surface, respectively the lateral surface of the blocks 20, in a direction substantially perpendicular to the surface considered. In this first phase, the islands are independent of each other.

[0084] In a second phase ([Fig.2B]), the islands coalesce, until they form a continuous layer 2 ([Fig.2C]), which is grown until it reaches the desired thickness e2.

[0085] As illustrated in [Fig.2C], the layer of interest is the continuous layer 2 which extends above the paving stones 20. Indeed, even if the material surrounding the paving stones is also diamond, the layer comprising the paving stones and the diamond formed by lateral epitaxial growth is likely to have an irregular crystalline quality and is therefore not optimal for forming a diamond substrate. The thickness e2 is therefore measured between the upper surface of the paving stones and the upper surface of layer 2.

[0086] A Smart Cut™ type process can then be implemented to transfer part of the continuous layer onto a receiving substrate.

[0087] With reference to [Fig. 3], a weakening zone 21 is formed in the continuous layer 2, so as to delimit a surface layer 22 of diamond. As shown schematically by the arrows, the weakening zone is formed by ion implantation in the continuous layer 2.

[0088] The implantation depth is chosen to be less than or equal to the thickness of the continuous layer, so that the surface layer does not include the material of the paving stones. The thickness of the surface layer 22 is typically between 100 nm and 1 μm.

[0089] The implantation conditions may vary depending on the material of the continuous layer.

[0090] In the case of a III-V material, an implantation of hydrogen and / or helium is generally sufficient to form the weakening zone at a determined depth of the continuous layer. A person skilled in the art knows how to determine the conditions required implantation, including implantation dose and energy.

[0091] In the case of diamond, it may be preferable to implement two hydrogen implantation steps in order to promote the formation of bubbles in the implanted area: a first hydrogen implantation step is followed by annealing at a temperature of the order of 1000°C to graphitize the implanted area. Then, a second hydrogen implantation is carried out in the graphitized area, which is more conducive to the formation of bubbles allowing the subsequent detachment of the continuous layer. This process was described in Jon de Vecchy's thesis entitled "Development of innovative substrates from diamond", defended on July 2, 2020, to which one can refer for details on the experimental conditions.

[0092] With reference to [Fig.4], the continuous layer 2 is bonded to a receiving substrate 3.

[0093] Advantageously, the receiving substrate has a diameter suitable for power microelectronics equipment, which is typically greater than 100 mm. Preferably, the diameter of the receiving substrate is of the order of 150 mm, 200 mm or 300 mm. The diameter of the receiving substrate is generally identical to that of the support substrate.

[0094] Silicon is a particularly suitable material for forming the receiving substrate. Indeed, it has a coefficient of thermal expansion compatible with that of diamond or certain III-V materials, and it is available in the form of large diameter substrates, so that it is particularly suitable for microelectronics equipment. However, those skilled in the art may use any other suitable material for the receiving substrate, for example SiC, sapphire or quartz, in monocrystalline or polycrystalline form.

[0095] The bonding of the continuous layer 2 to the receiving substrate 3 is advantageously carried out by molecular adhesion, but an intermediate bonding layer may optionally be used.

[0096] With reference to [Fig. 5], a fracture is initiated in the continuous layer, for example by heat treatment, application of mechanical stress or any other means, so as to detach the continuous layer along the weakening zone and transfer the surface layer 22 onto the receiving substrate 3.

[0097] A substrate S is thus obtained comprising a layer 22 of diamond or IILV material of excellent crystalline quality on the receiving substrate 3. Said substrate can be used for the manufacture of power electronic components or for any other application.

[0098] The substrate consisting of the support substrate 1, the blocks 20 and the remainder of the continuous layer of diamond or IILV material can be recycled for the purpose of forming one or more new substrates of the same type as the substrate S, by transferring a portion of the remainder of the continuous layer onto a respective new receiving substrate.

[0099] For this purpose, as illustrated in [Fig.6], the remainder 23 of the continuous layer of diamond or III-V material is polished so as to remove the defects linked to implantation and fracture.

[0100] If said remainder 23 of the continuous layer of diamond or III-V material is sufficiently thick, for example if it has a thickness e3 greater than the thickness of at least one new layer of diamond or III-V material to be transferred onto a new receiving substrate, it is then possible to implement the method of implantation, bonding and layer transfer as described with reference to FIGS. 3 to 5.

[0101] If the thickness e3 of the remainder 23 of the continuous layer of diamond or III-V material is insufficient, it is possible to carry out a resumption of epitaxy of diamond or III-V material to thicken the layer of diamond or III-V material until a layer 24 having the desired thickness e4 is obtained, as illustrated in [Fig.7]. It will then be possible to transfer one or more portions of the layer 24 to transfer it(them) onto one or more new respective receiving substrates.

[0102] The process of lateral growth of diamond or III-V material from the lateral surface of the blocks makes it possible to block through dislocations, which improves the quality of the continuous layer at least in the areas between the blocks. This results in a crystal quality of diamond or III-V material suitable for the manufacture of power electronic components, at least in the parts of the continuous layer between the blocks, which result mainly from lateral growth of diamond or III-V material. This improved crystal quality is obtained without the addition of contaminants into or onto the diamond or III-V material layer.

[0103] However, the continuous layer may have a heterogeneous crystalline quality, insofar as the parts of the layer located opposite the paving stones, which are mainly obtained by vertical growth of diamond or III-V material, have more crystalline defects, in particular through dislocations.

[0104] To remove said defects and homogenize the crystalline quality of the continuous layer of diamond or III-V material, it is then possible to implement the sequence of treatment steps which will be described with reference to FIGS. 8A to 8D.

[0105] Said sequence of steps is carried out after the formation of the continuous layer of diamond or III-V material on the paving stones, before bonding of said layer to the receiving substrate.

[0106] As illustrated in [Fig.8A], a light etching of the surface of the continuous layer 2 is carried out. A person skilled in the art is capable of choosing the etching method depending on the material of the continuous layer 2. For example, the etching may be a reactive ion etching of the “Inductively Coupled Plasma Reactive-Ion Etching” (ICP-RIE) type.

[0107] The etching has the effect of revealing the ZI zones with a higher density of defects, which are generally located opposite the blocks. Cavities are thus formed in the continuous layer 2. Depending on the thickness of the continuous layer 2, the depth of the cavities 2a can be of the order of 0.1 to 2 μm.

[0108] As illustrated in [Fig.8B], a photosensitive resin mask 4 is then deposited on the surface of the continuous layer 2. The mask has openings which expose the etched areas ZI and protects the non-etched areas. The pattern of the mask can be predefined according to the distribution pattern of the tiles on the support substrate, i.e. with the openings arranged opposite the tiles. The mask can be formed by known photolithography techniques.

[0109] With reference to [Fig.8C], a second etching is carried out through the mask 4. This second etching makes it possible to dig zones Z2 that are sufficiently deep to promote, during the following epitaxy resumption step, lateral growth of diamond or IILV material. The depth of the zones Z2 can thus be of the order of 1 to 10 μm, depending on the thickness of the continuous layer 2. The etching does not reach the blocks 20 themselves. A person skilled in the art is capable of choosing the etching method depending on the material of the continuous layer. The second etching can be carried out by the same method as the first etching or by a different method.

[0110] The mask is then removed, for example by selective etching.

[0111] With reference to [Fig.8D], a resumption of epitaxy of diamond or of the IILV material is implemented, which promotes lateral growth from the edges of the etched zones Z2, and which is accompanied by vertical growth from the non-etched zones, until coalescence and obtaining a continuous layer 2 of improved crystalline quality.

[0112] Said sequence of steps can be implemented one or more times.

[0113] Preferably, the sequence of steps is implemented as many times as necessary to achieve a dislocation density less than or equal to 104 cm2 in the continuous layer 2.

[0114] An advantage of the method is that it makes it possible to obtain a very good crystalline quality, which can be superior to the crystalline quality of the tiles. Thus, in certain embodiments, the diamond tiles or the donor substrate can be obtained by a so-called HPHT (high pressure, high temperature) process, providing an optimal crystalline quality but relatively expensive. In other embodiments, the diamond or IILV material tiles or the donor substrate can be obtained by a chemical vapor deposition process, which provides a lower crystalline quality but is less expensive. However, the resumption of epitaxy with growth from the lateral surface of the tiles makes it possible to overcome this lower crystalline quality of the tiles.

Claims

Claims

1.

2.

3. Method for manufacturing a diamond substrate, respectively of a III-V material for microelectronic applications, comprising: - bonding a plurality of diamond tiles (20), respectively of the monocrystalline III-V material on a support substrate (1), each tile being distant from the adjacent tiles, so as to expose a lateral surface (S2) of each tile, - the epitaxial growth of diamond, respectively of the III-V material, from the lateral surface and the upper surface of each block, until a continuous layer (2) of diamond, respectively of the III-V material, monocrystalline extending over the plurality of blocks (20), - the formation, by implantation of atomic species, of a weakening zone (21) in the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline, to delimit a surface layer (22) to be transferred, - bonding the continuous layer (2) of diamond, respectively of III-V material, monocrystalline on a receiving substrate (3), - detaching the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline along the weakening zone (21) so as to transfer the surface layer (22) of diamond, respectively of the III-V material, monocrystalline onto the receiving substrate (3), to form said diamond substrate, respectively of the III-V material. Method according to claim 1, further comprising, after the formation of the continuous layer (2) on the plurality of blocks (20), a sequence of steps successively comprising: - polishing of said continuous layer (2), - a first etching of the polished surface of said continuous layer (2) so as to reveal zones (Zl) with a higher density of crystalline defects, located opposite the blocks, - the deposition of a mask (4) of photosensitive resin on the surface of said continuous layer (2) so as to mask the non-etched areas, - a second etching, deeper than the first etching, of the areas (Z2) exposed by the mask, - a resumption of lateral epitaxial growth from the walls of the etched zones (Z2). The method of claim 2, wherein said sequence is repeated at least once.

4. Method according to one of claims 2 or 3, in which said sequence is implemented as many times as necessary to obtain a dislocation density less than or equal to 1E4 cm2 in the continuous layer (2) of diamond, respectively of the III-V material, monocrystalline.

5. Method according to one of claims 1 to 4, in which the continuous layer of diamond, respectively of III-V material, monocrystalline has a thickness (e2) greater than or equal to 1 pm.

6. Method according to one of claims 1 to 5, in which the surface layer of diamond, respectively of the III-V material, monocrystalline transferred onto the receiving substrate has a thickness of between 100 nm and 1 pm.

7. Method according to one of claims 1 to 6, in which the distance between two adjacent blocks is between 300 pm and 2 cm, preferably between 500 pm and 2.5 mm.

8. Method according to one of claims 1 to 7, in which each block has a width of between 3 mm and 2 cm.

9. A method according to one of claims 1 to 8, wherein at least one of the receiving substrate and the support substrate has a diameter greater than 100 mm.

10. A method according to one of claims 1 to 9, wherein the receiving substrate comprises silicon, silicon carbide, sapphire or quartz.

11. Method according to one of claims 1 to 10, in which the diamond blocks, respectively of the III-V material, monocrystalline are formed by a chemical vapor deposition process.

12. Method according to one of claims 1 to 11, comprising, after the transfer of the surface layer (22) of diamond, respectively of the III-V, monocrystalline material onto the receiving substrate (3): - polishing the remainder (23) of the continuous layer of diamond, respectively of the III-V, monocrystalline material extending over the plurality of blocks (20), - forming, by implantation of atomic species, a weakening zone in the continuous layer of diamond, respectively of the III-V, monocrystalline material, to delimit a new surface layer to be transferred, - bonding the continuous layer of diamond, respectively of the III-V, monocrystalline material onto a new receiving substrate, - detaching the continuous layer of diamond, respectively of the III-V material, monocrystalline along the weakening zone so as to transfer the new surface layer of diamond, respectively of the III-V material, monocrystalline onto the new receiving substrate, to form a new substrate of diamond, respectively of the III-V material.

13. Method according to claim 12, comprising, between the polishing of the remainder (23) of the continuous layer of diamond, respectively of the III-V material, monocrystalline and the formation of the weakening zone (21), the implementation of a resumption of the epitaxy of diamond, respectively of the III-V material, to thicken said continuous layer (24) of diamond, respectively of the III-V material, monocrystalline.

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