TRANSISTOR COMPRISING A VARIABLE DOPING CHANNEL REGION

Abstract

One aspect of the invention relates to a field-effect transistor (2) comprising: a source region (12) and a drain region (13); a channel region (11) disposed between the source and drain regions; a gate structure (14) disposed on the channel region; and an electrically insulating layer (16) on which the channel region and the source and drain regions are disposed; the channel region having first and second portions (11a, 11b) extending one over the other between the source and drain regions, the first portion (11a) being disposed between the second portion (11b) and the electrically insulating layer and having a first concentration of doping impurities, the second portion (11b) having a second concentration of doping impurities strictly greater than the first concentration of doping impurities. Figure to be published with the abstract: Figure 2

Claims

Formation of the bilayer stack includes the following substeps: - implanting ions in an upper portion of the active layer (33), at least part of the ions being capable of amorphizing the upper portion of the active layer (33); and - carrying out a solid phase recrystallization of the upper portion of the active layer (33), so as to activate at least part of the implanted ions so that they become dopants. 15' [Fig. 2] 15' [Fig. 4]

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